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CN113960619A - On-chip integrated distance measuring chip - Google Patents

On-chip integrated distance measuring chip Download PDF

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Publication number
CN113960619A
CN113960619A CN202111251757.4A CN202111251757A CN113960619A CN 113960619 A CN113960619 A CN 113960619A CN 202111251757 A CN202111251757 A CN 202111251757A CN 113960619 A CN113960619 A CN 113960619A
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CN
China
Prior art keywords
laser
detection
signal
receiving
piece
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Pending
Application number
CN202111251757.4A
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Chinese (zh)
Inventor
刘敬伟
徐浩
李文玲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guoke Optical Core Haining Technology Co ltd
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Guoke Optical Core Haining Technology Co ltd
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Priority to CN202111251757.4A priority Critical patent/CN113960619A/en
Publication of CN113960619A publication Critical patent/CN113960619A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
    • G01S17/06—Systems determining position data of a target
    • G01S17/08—Systems determining position data of a target for measuring distance only
    • G01S17/10—Systems determining position data of a target for measuring distance only using transmission of interrupted, pulse-modulated waves
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/484—Transmitters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/483—Details of pulse systems
    • G01S7/486—Receivers
    • G01S7/4865—Time delay measurement, e.g. time-of-flight measurement, time of arrival measurement or determining the exact position of a peak

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Electromagnetism (AREA)
  • Optical Radar Systems And Details Thereof (AREA)

Abstract

The embodiment provides an on-chip integrated ranging chip, includes: a semiconductor substrate; the laser detection device comprises a laser emitting piece, a detection receiving diffraction structure and an analysis module, wherein the laser emitting piece, the detection receiving diffraction structure and the analysis module are arranged on one side surface of the semiconductor substrate, the detection receiving diffraction structure is suitable for receiving a laser signal output by the laser emitting piece, emitting the laser signal to a target object and receiving the laser signal reflected by the target object, and the analysis module is suitable for obtaining the flight time of the laser signal and calculating the distance of the target object according to the flight time. The on-chip integrated ranging chip can realize detection, tracking and identification of a target object, has smaller volume and higher integration level, solves the problem of larger size of a laser ranging system, and is convenient for realizing large-scale integration.

Description

On-chip integrated distance measuring chip
Technical Field
The invention relates to the technical field of laser detection, in particular to an on-chip integrated ranging chip.
Background
The laser ranging technique is a technique for detecting characteristic quantities such as a position and a velocity of a target object by emitting laser light. The current common distance measurement scheme is Time of Flight (TOF), and the working principle of the method is to transmit a detection signal to a target object and receive an echo signal reflected by the target object, so as to obtain the Flight Time of the detection signal and further obtain the related information of the target object, thereby detecting, tracking and identifying the target object. The time flight method has the advantages of small error and relatively stable performance. The present laser ranging system includes a laser transmitter for transmitting a probe signal, an optical receiver for receiving an echo signal, and an information processing unit for calculating to obtain information about a target object.
However, the size of the existing laser ranging system is large, which limits the application of the laser ranging system.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defect of the existing laser ranging system that the size is large, thereby providing an on-chip integrated ranging chip.
The invention provides an on-chip integrated distance measuring chip, comprising: a semiconductor substrate; the laser detection device comprises a laser emitting piece, a detection receiving diffraction structure and an analysis module, wherein the laser emitting piece, the detection receiving diffraction structure and the analysis module are arranged on one side surface of the semiconductor substrate, the detection receiving diffraction structure is suitable for receiving a laser signal output by the laser emitting piece, emitting the laser signal to a target object and receiving the laser signal reflected by the target object, and the analysis module is suitable for obtaining the flight time of the laser signal and calculating the distance of the target object according to the flight time.
Optionally, the laser emitting component is a wavelength scanning light source.
Optionally, the laser signal is a pulse laser signal, and the pulse laser signal includes a pulse signal emitted at intervals; the analysis module is adapted to obtain a time of flight of each of the pulse signals and calculate an average velocity of movement of the target over the time interval during which the laser emitting member emits the pulse signal.
Optionally, the on-chip integrated ranging chip further includes: the input end of the coupling piece is connected with the output end of the laser emitting piece, and the coupling piece is suitable for dividing the laser signal output by the laser emitting piece into a detection signal and a reference signal; the optical transmission assembly is positioned on one side surface of the semiconductor substrate and comprises a detection optical transmission piece, a reference optical transmission piece and an echo transmission piece; the input end of the detection light transmission piece is connected with the output end of the coupling piece, the output end of the detection light transmission piece is connected with the detection receiving diffraction structure, and the detection light transmission piece is suitable for transmitting the detection signal; the input end of the reference light transmission piece is connected with the output end of the coupling piece, and the reference light transmission piece is suitable for transmitting the reference signal; the input end of the echo transmission piece is connected with the detection receiving diffraction structure, and the echo transmission piece is suitable for transmitting the laser signal reflected by the target object and received by the detection receiving diffraction structure.
Optionally, an output end of the reference light transmission member is connected with an input end of the analysis module, and an output end of the echo transmission member is connected with an input end of the analysis module; the time of flight is a time interval from the analysis module receiving the laser signal reflected by the target object to the analysis module receiving the reference signal.
Optionally, the on-chip integrated ranging chip further includes: the input end of the first photoelectric detection piece is connected with the output end of the echo transmission piece, and the first photoelectric detection piece is suitable for converting the laser signal reflected by the target object into a first electric signal; a first electrical transmission member connecting an output of the first photodetection member and an input of the analysis module, the first electrical transmission member being adapted to transmit the first electrical signal; the output end of the reference light transmission piece is connected with the input end of the second photoelectric detection piece, and the second photoelectric detection piece is suitable for converting the reference signal into a second electric signal; a second electrical transmission member connecting an output of the second photodetection member and an input of the analysis module, the second electrical transmission member being adapted to transmit the second electrical signal; the time of flight is the time interval between the analysis module receiving the first electrical signal and the analysis module receiving the second electrical signal.
Optionally, the first photoelectric detection element and the second photoelectric detection element are both photoelectric detectors or optical triggers.
Optionally, the optical transmission component is a waveguide, and the waveguide and the semiconductor substrate are of an integrated structure; the coupling pieces are 1 multiplied by 2 multimode interference couplers, 1 multiplied by 2 directional couplers, ring cavity couplers, star couplers, Fresnel lens arrays based on slab waveguides, superlens arrays based on slab waveguides or half-lenses.
Optionally, the on-chip integrated ranging chip further includes: the detection light transmission piece is connected with the output end of the laser emitting piece and the input end of the detection receiving diffraction structure and is suitable for transmitting a laser signal output by the laser emitting piece; the input end of the echo transmission piece is connected with the detection receiving diffraction structure, and the echo transmission piece is suitable for transmitting the laser signal reflected by the target object and received by the detection receiving diffraction structure; a third electric transmission member connecting an output end of the analysis module and an input end of the laser emitting member; the analysis module is suitable for outputting a control signal to control the laser emitting component to output a laser signal, and the third electric transmission component is suitable for transmitting the control signal.
Optionally, the output end of the echo transmission piece is connected with the input end of the analysis module; the flight time is the time interval between the laser emitting part outputting the laser signal and the analysis module receiving the laser signal reflected by the target object.
Optionally, the on-chip integrated ranging chip further includes: the input end of the first photoelectric detection piece is connected with the output end of the echo transmission piece, and the first photoelectric detection piece is suitable for converting the laser signal reflected by the target object into a first electric signal; a first electrical transmission member connecting an output of the first photodetection member and an input of the analysis module, the first electrical transmission member being adapted to transmit the first electrical signal; the flight time is a time interval between the laser emitting part outputting the laser signal and the analysis module receiving the first electric signal.
Optionally, the detecting and receiving diffraction structure includes an emitting diffraction unit and a receiving diffraction unit which are spaced apart from each other, the emitting diffraction unit is connected to the output end of the detecting light transmission member, the emitting diffraction unit is adapted to emit the laser signal to the target object, the receiving diffraction unit is connected to the input end of the echo transmission member, and the receiving diffraction unit is adapted to receive the laser signal reflected by the target object.
Optionally, the detecting and receiving diffraction structure comprises: the laser signal detection device comprises a detection receiving diffraction unit and a coupling unit, wherein one end of the coupling unit is connected with the detection receiving diffraction unit, the other end of the coupling unit is connected with the output end of the detection light transmission piece and the input end of the echo transmission piece, and the detection receiving diffraction unit is suitable for transmitting the laser signal to a target object and receiving the laser signal reflected by the target object.
Optionally, the emission diffraction unit is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating;
the receiving diffraction unit is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating.
Optionally, the detection and reception diffraction unit is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the coupling unit is a 1 × 2 multi-mode interference coupler, a 1 × 2 directional coupler, a ring cavity coupler, a star coupler, a Fresnel lens array based on a slab waveguide, a super lens array based on a slab waveguide or a half-mirror.
The technical scheme of the invention has the following advantages:
1. according to the on-chip integrated ranging chip provided by the invention, the detection receiving diffraction structure receives the laser signal output by the laser emitting component and then emits the laser signal to the target object, the laser signal is reflected on the surface of the target object, the detection receiving diffraction structure receives the laser signal reflected by the target object, the analysis module obtains the flight time of the laser signal and calculates the distance of the target object according to the flight time, and therefore the detection, tracking and identification of the target object are realized. Meanwhile, the laser emitting part, the detecting and receiving diffraction structure and the analysis module are arranged on the surface of one side of the semiconductor substrate, so that the laser ranging system has smaller volume and higher integration level, the problem of larger size of the laser ranging system is solved, and large-scale integration is convenient to realize.
2. According to the on-chip integrated ranging chip provided by the invention, the laser emitting part is a wavelength scanning light source, the wavelength of a laser signal output by the wavelength scanning light source is adjustable, and meanwhile, the detection receiving diffraction structure has a dispersion effect, so that the diffraction angle of the laser signal transmitted to the detection receiving diffraction structure can be changed along with the wavelength of the laser signal, therefore, the emitting direction of the laser signal from the detection receiving diffraction structure can be adjusted by adjusting the wavelength of the laser signal output by the wavelength scanning light source, and multi-direction detection is realized.
3. The on-chip integrated ranging chip provided by the invention is characterized in that the detection and reception diffraction structure comprises an emission diffraction unit and a reception diffraction unit which are mutually spaced, the emission diffraction unit is connected with the output end of the detection light transmission piece, the reception diffraction unit is connected with the input end of the echo transmission piece, the emission diffraction unit is used for emitting the laser signal to the target object, and the reception diffraction unit is used for receiving the laser signal reflected by the target object. The detection receiving diffraction structure separates the emission and the reception of the laser signals, so that the emission and the reception of the laser signals are not influenced mutually, the emission and the reception of the laser signals can be carried out simultaneously, a time window for emitting the laser signals or a time window for receiving the laser signals does not need to be reserved, and the detection efficiency and the detection sensitivity are higher.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of an on-chip integrated ranging chip provided in embodiment 1 of the present invention;
fig. 2 is a schematic structural diagram of an on-chip integrated ranging chip according to embodiment 2 of the present invention;
fig. 3 is a schematic structural diagram of an on-chip integrated ranging chip according to embodiment 3 of the present invention;
fig. 4 is a schematic structural diagram of an on-chip integrated ranging chip according to embodiment 4 of the present invention;
fig. 5 is a schematic structural diagram of an on-chip integrated ranging chip according to embodiment 5 of the present invention;
fig. 6 is a schematic structural diagram of an on-chip integrated ranging chip according to embodiment 6 of the present invention;
fig. 7 is a schematic structural diagram of an on-chip integrated ranging chip according to embodiment 7 of the present invention;
fig. 8 is a schematic structural diagram of an on-chip integrated ranging chip according to embodiment 8 of the present invention;
description of reference numerals:
1-a semiconductor substrate; 2-a laser emitting member; 3-detecting the receiving diffractive structure; 3' -detecting the receiving diffractive structure; 31-an emission diffraction unit; 32-a receiving diffraction unit; 33-detecting a receiving diffraction unit; 34-a coupling unit; 4-an analysis module; 5-a coupling element; 6-detecting the optical transmission member; 7-a reference light transmissive member; 8-echo transmission; 9-a first photodetection element; 10-a second photodetection element; 11-a first electrical transmission; 12-a second electrical transmission; 13-third electrical transmission element.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "first", "second", and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Example 1
Referring to fig. 1, the present embodiment provides an on-chip integrated ranging chip, including: a semiconductor substrate 1; the laser detection device comprises a laser emitting part 2, a detection receiving diffraction structure 3 and an analysis module 4, wherein the laser emitting part 2, the detection receiving diffraction structure 3 and the analysis module 4 are arranged on one side surface of the semiconductor substrate 1, the detection receiving diffraction structure 3 is suitable for receiving a laser signal output by the laser emitting part 2, emitting the laser signal to a target object and receiving the laser signal reflected by the target object, and the analysis module 4 is suitable for obtaining the flight time of the laser signal and calculating the distance of the target object according to the flight time.
In the on-chip integrated ranging chip, the detection receiving diffraction structure 3 receives the laser signal output by the laser emitting component 2 and then emits the laser signal to the target object, the laser signal is reflected on the surface of the target object, the detection receiving diffraction structure 3 receives the laser signal reflected by the target object, and the analysis module 4 obtains the flight time of the laser signal and calculates the distance of the target object according to the flight time, so that the detection, tracking and identification of the target object are realized. Meanwhile, the laser emitting part 2, the detecting and receiving diffraction structure 3 and the analysis module 4 are arranged on the surface of one side of the semiconductor substrate 1, so that the laser ranging system has smaller volume and higher integration level, the problem of larger size of the laser ranging system is solved, and large-scale integration is facilitated.
In the present embodiment, the material of the semiconductor substrate 1 includes, but is not limited to, a group III-V semiconductor material and a silicon-based material. In the present embodiment, the laser emitter 2 and the analysis module 4 are fixed to the surface of the semiconductor substrate 1, respectively; specifically, the laser emitter 2 and the analysis module 4 are mixedly integrated on the surface of the semiconductor substrate 1. The detection receiving diffraction structure 3 is prepared on the surface of the semiconductor substrate 1.
In this embodiment, the on-chip integrated ranging chip further includes:
the input end of the coupling piece 5 is connected with the output end of the laser emitting piece 2, and the coupling piece 5 is suitable for dividing the laser signal output by the laser emitting piece 2 into a detection signal and a reference signal;
an optical transmission member located on one side surface of the semiconductor substrate 1, the optical transmission member including a probe optical transmission member 6, a reference optical transmission member 7, and an echo transmission member 8; the optical transmission component, the coupling piece 5, the laser emitting piece 2, the detection and reception diffraction structure 3 and the analysis module 4 are positioned on the same side of the semiconductor substrate 1; the input end of the detection light transmission member 6 is connected with the output end of the coupling member 5, the output end of the detection light transmission member 6 is connected with the detection receiving diffraction structure 3, and the detection light transmission member 6 is suitable for transmitting the detection signal; the input end of the reference light transmitter 7 is connected with the output end of the coupling piece 5, the output end of the reference light transmitter 7 is connected with the input end of the analysis module 4, and the reference light transmitter 7 is suitable for transmitting the reference signal; the input end of the echo transmission member 8 is connected to the detecting and receiving diffraction structure 3, the output end of the echo transmission member 8 is connected to the input end of the analysis module 4, and the echo transmission member 8 is suitable for transmitting the laser signal reflected by the target received by the detecting and receiving diffraction structure 3.
In this embodiment, the time of flight is a time interval between the analysis module 4 receiving the laser signal reflected by the target and the analysis module 4 receiving the reference signal. Specifically, the analysis module 4 includes a storage unit, a calculation unit and a receiving unit, and the receiving unit is adapted to receive the laser signal reflected by the target object and the reference signal. In one embodiment, the storage unit is adapted to record a time when the receiving unit receives the laser signal reflected by the target object and a time when the receiving unit receives the reference signal, and the calculating unit is adapted to calculate a time interval between the two times, so as to obtain the time of flight. In other embodiments, the storage unit is adapted to record the phase of the laser signal reflected by the target received by the receiving unit and the phase of the reference signal received by the receiving unit, and the calculating unit is adapted to calculate the phase difference between the two and calculate the time of flight from the phase difference between the two.
Specifically, the optical transmission component is a waveguide, the waveguide is prepared on the surface of the semiconductor substrate 1, and the waveguide and the semiconductor substrate 1 are of an integrated structure. The coupling piece 5 is a 1 × 2 multimode interference coupler, a 1 × 2 directional coupler, a ring cavity coupler, a star coupler, a fresnel lens array based on a slab waveguide, a super lens array based on a slab waveguide, or a half mirror, the coupling piece 5 is prepared on the surface of the semiconductor substrate 1, and the coupling piece 5 and the semiconductor substrate 1 are of an integrated structure.
In the present embodiment, the detection reception diffraction structure 3 includes: a detection and reception diffraction unit 33 and a coupling unit 34, wherein one end of the coupling unit 34 is connected to the detection and reception diffraction unit 33, the other end of the coupling unit 34 is connected to the output end of the detection light transmission member 6 and the input end of the echo transmission member 8, and the detection and reception diffraction unit 33 is adapted to transmit the laser signal to a target and receive the laser signal reflected by the target. The detection signal transmitted along the detection light transmitting member 6 enters the detection reception diffraction unit 33 through the coupling unit 34 and is then emitted toward the target object; the detection signal is reflected by the target object to obtain an echo signal, and the echo signal is received by the detection receiving diffraction unit 33, enters the echo transmission member 8 through the coupling unit 34, and is then transmitted to the analysis module 4 along the echo transmission member 8.
Specifically, the detecting and receiving diffraction unit 33 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the coupling unit 34 is a 1 × 2 multimode interference coupler, a 1 × 2 directional coupler, a ring cavity coupler, a star coupler, a fresnel lens array based on a slab waveguide, a superlens array based on a slab waveguide, or a half-mirror.
Further, in one embodiment, the laser signal is a pulsed laser signal comprising pulsed signals emitted at intervals; the analysis module 4 is adapted to obtain the time of flight of each of the pulse signals and to calculate the average speed of movement of the object during the time interval in which the laser emitting member 2 emits the pulse signal. On the premise of not influencing the detection performance of the on-chip integrated ranging chip, the smaller the time interval of the pulse signal emitted by the laser emitting part 2 is, the closer the calculated average speed is to the real-time moving speed of the target.
Specifically, each pulse signal is divided into a detection pulse signal and a reference pulse signal by the coupling element 5, the detection pulse signal is reflected by the target object to obtain an echo pulse signal, and the echo pulse signal is finally received by the receiving unit; the storage unit is suitable for recording the transmitting sequence of the pulse signals, the time when the receiving unit receives each echo pulse signal or the phase of each echo pulse signal, and the time when the receiving unit receives each reference pulse signal or the phase of each reference pulse signal, the calculating unit is suitable for corresponding a plurality of received echo pulse signals and a plurality of received reference pulse signals according to the transmitting sequence of the pulse signals, so that the flight time of each pulse signal is obtained, the distance of the target corresponding to the output time of each pulse signal is further obtained, and finally the average moving speed of the target in the time interval of the pulse signals transmitted by the laser transmitting piece 2 is calculated.
Further, in one embodiment, the laser emitting member 2 is a wavelength-scanning light source. The wavelength of the laser signal output by the wavelength scanning light source is adjustable, and the detecting and receiving diffraction structure 3 has a dispersion effect, so that the diffraction angle of the laser signal transmitted to the detecting and receiving diffraction structure 3 can be changed along with the wavelength of the laser signal, therefore, the direction of the laser signal emitted from the detecting and receiving diffraction structure 3 can be adjusted by adjusting the wavelength of the laser signal output by the wavelength scanning light source, and multi-directional detection is realized. Therefore, the on-chip integrated ranging chip can realize multi-direction detection without depending on an additional mechanical structure, and has smaller volume and higher integration level. In particular, the diffraction angle θ of the laser signal transmitted to said detecting and receiving diffractive structure 3 is proportional to the wavelength λ of the laser signal, i.e. sin θ ═ λ; the flight time of the laser signal is tau ═ Δ f/k, where k is the slope of wavelength change in the wavelength scanning light source, and Δ f is the phase difference between the laser signal reflected by the target object and the reference signal.
Example 2
Referring to fig. 2, the present embodiment provides an on-chip integrated ranging chip, which is different from the on-chip integrated ranging chip provided in embodiment 1 in that:
the detecting and receiving diffraction structure 3' includes an emitting diffraction unit 31 and a receiving diffraction unit 32 which are spaced apart from each other, the emitting diffraction unit 31 is connected to the output end of the detecting light transmission member 6, the emitting diffraction unit 31 is adapted to emit the laser signal to the target object, the receiving diffraction unit 32 is connected to the input end of the echo transmission member 8, and the receiving diffraction unit 32 is adapted to receive the laser signal reflected by the target object. The detection and reception diffraction structure 3' separates the transmission and reception of the laser signals, so that the transmission and reception of the laser signals are not affected mutually, the transmission and reception of the laser signals can be carried out simultaneously, a time window for transmitting the laser signals or a time window for receiving the laser signals does not need to be reserved, and the detection efficiency and the detection sensitivity are higher.
Specifically, the emission diffraction unit 31 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the receiving diffraction unit 32 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating.
Further, in an embodiment, a crosstalk prevention structure (not shown in the figure) may be further disposed between the transmitting diffraction unit 31 and the receiving diffraction unit 32 to reduce optical crosstalk between the laser signal to be transmitted in the transmitting diffraction unit 31 and the laser signal received by the receiving diffraction unit 32. Specifically, the crosstalk prevention structure may be a trench formed on the surface of the semiconductor substrate 1.
Example 3
Referring to fig. 3, the present embodiment provides an on-chip integrated ranging chip, including: a semiconductor substrate 1; the laser detection device comprises a laser emitting part 2, a detection receiving diffraction structure 3 and an analysis module 4, wherein the laser emitting part 2, the detection receiving diffraction structure 3 and the analysis module 4 are arranged on one side surface of the semiconductor substrate 1, the detection receiving diffraction structure 3 is suitable for receiving a laser signal output by the laser emitting part 2, emitting the laser signal to a target object and receiving the laser signal reflected by the target object, and the analysis module 4 is suitable for obtaining the flight time of the laser signal and calculating the distance of the target object according to the flight time.
In the present embodiment, the material of the semiconductor substrate 1 includes, but is not limited to, a group III-V semiconductor material and a silicon-based material. In the present embodiment, the laser emitter 2 and the analysis module 4 are fixed to the surface of the semiconductor substrate 1, respectively; specifically, the laser emitter 2 and the analysis module 4 are mixedly integrated on the surface of the semiconductor substrate 1. The detection receiving diffraction structure 3 is prepared on the surface of the semiconductor substrate 1.
In this embodiment, the on-chip integrated ranging chip further includes:
the input end of the coupling piece 5 is connected with the output end of the laser emitting piece 2, and the coupling piece 5 is suitable for dividing the laser signal output by the laser emitting piece 2 into a detection signal and a reference signal;
an optical transmission member located on one side surface of the semiconductor substrate 1, the optical transmission member including a probe optical transmission member 6, a reference optical transmission member 7, and an echo transmission member 8; the input end of the detection light transmission member 6 is connected with the output end of the coupling member 5, the output end of the detection light transmission member 6 is connected with the detection receiving diffraction structure 3, and the detection light transmission member 6 is suitable for transmitting the detection signal; the input end of the reference light transmission piece 7 is connected with the output end of the coupling piece 5, and the reference light transmission piece 7 is suitable for transmitting the reference signal; the input end of the echo transmission part 8 is connected with the detection and reception diffraction structure 3, and the echo transmission part 8 is suitable for transmitting the laser signal reflected by the target object received by the detection and reception diffraction structure 3;
a second photodetector 10, an output end of the reference light transmitting member 7 being connected to an input end of the second photodetector 10, the second photodetector 10 being adapted to convert the reference signal into a second electrical signal;
a second electrical transmission element 12, said second electrical transmission element 12 connecting an output of said second photodetector 10 and an input of said analysis module 4, said second electrical transmission element 12 being adapted to transmit said second electrical signal;
the input end of the first photoelectric detection piece 9 is connected with the output end of the echo transmission piece 8, and the first photoelectric detection piece 9 is suitable for converting the laser signal reflected by the target into a first electric signal;
a first electrical transmission element 11, said first electrical transmission element 11 connecting an output of said first photodetection element 9 and an input of said analysis module 4, said first electrical transmission element 11 being adapted to transmit said first electrical signal.
In this embodiment, the time of flight is a time interval between the analysis module 4 receiving the first electrical signal and the analysis module 4 receiving the second electrical signal. In particular, the analysis module 4 comprises a storage unit, a calculation unit and a receiving unit, the receiving unit being adapted to receive the first electrical signal and the second electrical signal; the storage unit is suitable for recording the moment when the receiving unit receives the first electric signal and the moment when the receiving unit receives the second electric signal, and the calculating unit is suitable for calculating the time interval of the two moments so as to obtain the flight time.
Specifically, the optical transmission component is a waveguide, the waveguide is prepared on the surface of the semiconductor substrate 1, and the waveguide and the semiconductor substrate 1 are of an integrated structure. The coupling piece 5 is a 1 × 2 multimode interference coupler, a 1 × 2 directional coupler, a ring cavity coupler, a star coupler, a fresnel lens array based on a slab waveguide, a super lens array based on a slab waveguide, or a half mirror, the coupling piece 5 is prepared on the surface of the semiconductor substrate 1, and the coupling piece 5 and the semiconductor substrate 1 are of an integrated structure.
Specifically, the first photodetection element 9 and the second photodetection element 10 are both photodetectors or optical flip-flops, the photodetectors may be avalanche photodiodes or optical switches, and the first photodetection element 9 and the second photodetection element 10 are mixedly integrated on the surface of the semiconductor substrate 1.
Specifically, the first electrical transmission element 11 includes a conductive wire, and the first electrical transmission element 11 may be formed on the surface of the semiconductor substrate 1 through deposition and etching steps; the second electrical transmission element 12 comprises a conductive wire, and the second electrical transmission element 12 may be formed on the surface of the semiconductor substrate 1 through deposition and etching steps.
In the present embodiment, the optical transmission component, the coupling element 5, the first photodetection element 9, the second photodetection element 10, the first electrical transmission element 11, the second electrical transmission element 12, the laser emitting element 2, the probe receiving diffractive structure 3, and the analysis module 4 are located on the same side of the semiconductor substrate 1.
In the present embodiment, the detection reception diffraction structure 3 includes: a detection and reception diffraction unit 33 and a coupling unit 34, wherein one end of the coupling unit 34 is connected to the detection and reception diffraction unit 33, the other end of the coupling unit 34 is connected to the output end of the detection light transmission member 6 and the input end of the echo transmission member 8, and the detection and reception diffraction unit 33 is adapted to transmit the laser signal to a target and receive the laser signal reflected by the target. The detection signal transmitted along the detection light transmitting member 6 enters the detection reception diffraction unit 33 through the coupling unit 34 and is then emitted toward the target object; the detection signal is reflected by the target object to obtain an echo signal, and the echo signal is received by the detection receiving diffraction unit 33, enters the echo transmission member 8 through the coupling unit 34, and is then transmitted to the first photoelectric detection member 9 along the echo transmission member 8.
Specifically, the detecting and receiving diffraction unit 33 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the coupling unit 34 is a 1 × 2 multimode interference coupler, a 1 × 2 directional coupler, a ring cavity coupler, a star coupler, a fresnel lens array based on a slab waveguide, a superlens array based on a slab waveguide, or a half-mirror.
Further, in one embodiment, the laser signal is a pulsed laser signal comprising pulsed signals emitted at intervals; the analysis module 4 is adapted to obtain the time of flight of each of the pulse signals and to calculate the average speed of movement of the object during the time interval in which the laser emitting member 2 emits the pulse signal. On the premise of not influencing the detection performance of the on-chip integrated ranging chip, the smaller the time interval of the pulse signal emitted by the laser emitting part 2 is, the closer the calculated average speed is to the real-time moving speed of the target.
Specifically, each pulse signal is divided into a detection pulse signal and a reference pulse signal by the coupling element 5; the detection pulse signal is finally reflected on a target object to form an echo pulse signal, the echo pulse signal is finally converted into a first pulse electric signal by the first photoelectric detection element 9, and then the first pulse electric signal is transmitted to the analysis module 4 along the first electric transmission element 11; the reference pulsed signal is finally converted into a second pulsed electrical signal by the second photodetection element 10, and then the second pulsed electrical signal is transmitted along the second electrical transmission element 12 to the analysis module 4; the storage unit is suitable for recording the transmitting sequence of the pulse signals, the time when the receiving unit receives each first pulse electric signal and the time when the receiving unit receives each second pulse electric signal, and the calculating unit is suitable for corresponding a plurality of first pulse electric signals and a plurality of second pulse electric signals according to the transmitting sequence of the pulse signals so as to obtain the flight time of each pulse signal, further obtain the distance of the target corresponding to the output time of each pulse signal and finally calculate the moving average speed of the target in the time interval of the pulse signals transmitted by the laser transmitter 2.
Further, in one embodiment, the laser emitting member 2 is a wavelength-scanning light source. The wavelength of the laser signal output by the wavelength scanning light source is adjustable, and the detecting and receiving diffraction structure 3 has a dispersion effect, so that the diffraction angle of the laser signal transmitted to the detecting and receiving diffraction structure 3 can be changed along with the wavelength of the laser signal, therefore, the direction of the laser signal emitted from the detecting and receiving diffraction structure 3 can be adjusted by adjusting the wavelength of the laser signal output by the wavelength scanning light source, and multi-directional detection is realized. Therefore, the on-chip integrated ranging chip can realize multi-direction detection without depending on an additional mechanical structure, and has smaller volume and higher integration level. Specifically, the diffraction angle θ of the laser signal transmitted to the detecting and receiving diffractive structure 3 is proportional to the wavelength λ of the laser signal, i.e., sin θ ∞ λ.
Example 4
Referring to fig. 4, the present embodiment provides an on-chip integrated ranging chip, which is different from the on-chip integrated ranging chip provided in embodiment 3 in that:
the detecting and receiving diffraction structure 3' includes an emitting diffraction unit 31 and a receiving diffraction unit 32 which are spaced apart from each other, the emitting diffraction unit 31 is connected to the output end of the detecting light transmission member 6, the emitting diffraction unit 31 is adapted to emit the laser signal to the target object, the receiving diffraction unit 32 is connected to the input end of the echo transmission member 8, and the receiving diffraction unit 32 is adapted to receive the laser signal reflected by the target object. The detection and reception diffraction structure 3' separates the transmission and reception of the laser signals, so that the transmission and reception of the laser signals are not affected mutually, the transmission and reception of the laser signals can be carried out simultaneously, a time window for transmitting the laser signals or a time window for receiving the laser signals does not need to be reserved, and the detection efficiency and the detection sensitivity are higher.
Specifically, the emission diffraction unit 31 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the receiving diffraction unit 32 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating.
Further, in an embodiment, a crosstalk prevention structure (not shown in the figure) may be further disposed between the transmitting diffraction unit 31 and the receiving diffraction unit 32 to reduce optical crosstalk between the laser signal to be transmitted in the transmitting diffraction unit 31 and the laser signal received by the receiving diffraction unit 32. Specifically, the crosstalk prevention structure may be a trench formed on the surface of the semiconductor substrate 1.
Example 5
Referring to fig. 5, the present embodiment provides an on-chip integrated ranging chip, including: a semiconductor substrate 1; the laser detection device comprises a laser emitting part 2, a detection receiving diffraction structure 3 and an analysis module 4, wherein the laser emitting part 2, the detection receiving diffraction structure 3 and the analysis module 4 are arranged on one side surface of the semiconductor substrate 1, the detection receiving diffraction structure 3 is suitable for receiving a laser signal output by the laser emitting part 2, emitting the laser signal to a target object and receiving the laser signal reflected by the target object, and the analysis module 4 is suitable for obtaining the flight time of the laser signal and calculating the distance of the target object according to the flight time.
In the present embodiment, the material of the semiconductor substrate 1 includes, but is not limited to, a group III-V semiconductor material and a silicon-based material. In the present embodiment, the laser emitter 2 and the analysis module 4 are fixed to the surface of the semiconductor substrate 1, respectively; specifically, the laser emitter 2 and the analysis module 4 are mixedly integrated on the surface of the semiconductor substrate 1. The detection receiving diffraction structure 3 is prepared on the surface of the semiconductor substrate 1.
In this embodiment, the on-chip integrated ranging chip further includes:
a detection light transmission member 6, wherein the detection light transmission member 6 is connected with the output end of the laser emitting member 2 and the input end of the detection receiving diffraction structure 3, and the detection light transmission member 6 is suitable for transmitting the laser signal output by the laser emitting member 2;
an echo transmission element 8, an input end of the echo transmission element 8 is connected with the detection and reception diffraction structure 3, an output end of the echo transmission element 8 is connected with an input end of the analysis module 4, and the echo transmission element 8 is suitable for transmitting the laser signal reflected by the target object received by the detection and reception diffraction structure 3;
a third electrical transmission element 13, said third electrical transmission element 13 connecting the output of said analysis module 4 and the input of said laser emitting element 2; the analysis module 4 is adapted to output a control signal to control the laser emitting device 2 to output a laser signal, and the third electrical transmission device 13 is adapted to transmit the control signal.
In this embodiment, the flight time is a time interval between the laser emitting device 2 outputting the laser signal and the analysis module 4 receiving the laser signal reflected by the target object. Specifically, the analysis module 4 includes a control unit, a receiving unit, a storage unit and a calculation unit; the control unit is suitable for sending out a control signal, the receiving unit is suitable for receiving the laser signal reflected by the target object, the storage unit is suitable for recording the moment when the receiving unit receives the laser signal reflected by the target object and the moment when the laser emitting component 2 outputs the laser signal, and the calculating unit is suitable for calculating the time interval between the two moments so as to obtain the flight time.
Specifically, the detection light transmission member 6 and the echo transmission member 8 are both waveguides, the waveguides are prepared on the surface of the semiconductor substrate 1, and the waveguides and the semiconductor substrate 1 are of an integrated structure. The third electrical transmission element 13 is a conductive wire, and the third electrical transmission element 13 may be formed on the surface of the semiconductor substrate 1 through deposition and etching steps. The detection light transmission member 6, the echo transmission member 8, the third electrical transmission member 13, the laser emitting member 2, the detection receiving diffraction structure 3 and the analysis module 4 are located on the same side of the semiconductor substrate 1.
In the present embodiment, the detection reception diffraction structure 3 includes: a detection and reception diffraction unit 33 and a coupling unit 34, wherein one end of the coupling unit 34 is connected to the detection and reception diffraction unit 33, the other end of the coupling unit 34 is connected to the output end of the detection light transmission member 6 and the input end of the echo transmission member 8, and the detection and reception diffraction unit 33 is adapted to transmit the laser signal to a target and receive the laser signal reflected by the target. The detection signal transmitted along the detection light transmitting member 6 enters the detection reception diffraction unit 33 through the coupling unit 34 and is then emitted toward the target object; the detection signal is reflected by the target object to obtain an echo signal, and the echo signal is received by the detection receiving diffraction unit 33, enters the echo transmission member 8 through the coupling unit 34, and is then transmitted to the analysis module 4 along the echo transmission member 8.
Specifically, the detecting and receiving diffraction unit 33 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the coupling unit 34 is a 1 × 2 multimode interference coupler, a 1 × 2 directional coupler, a ring cavity coupler, a star coupler, a fresnel lens array based on a slab waveguide, a superlens array based on a slab waveguide, or a half-mirror.
Further, in one embodiment, the laser signal is a pulsed laser signal comprising pulsed signals emitted at intervals; the analysis module 4 is adapted to obtain the time of flight of each of the pulse signals and to calculate the average speed of movement of the object during the time interval in which the laser emitting member 2 emits the pulse signal. On the premise of not influencing the detection performance of the on-chip integrated ranging chip, the smaller the time interval of the pulse signal emitted by the laser emitting part 2 is, the closer the calculated average speed is to the real-time moving speed of the target.
Specifically, the storage unit is adapted to record a transmission sequence of the pulse signals, a time when the laser transmitter 2 outputs each pulse signal, and a time when the receiving unit receives each pulse signal, and the calculating unit is adapted to correspond a plurality of times when the pulse signals are output to a plurality of times when the pulse signals are received according to the transmission sequence of the pulse signals, so as to obtain a flight time of each pulse signal, further obtain a distance of the target corresponding to the output time of each pulse signal, and finally calculate an average moving speed of the target in a time interval when the laser transmitter 2 transmits the pulse signals.
Further, in one embodiment, the laser emitting member 2 is a wavelength-scanning light source. The wavelength of the laser signal output by the wavelength scanning light source is adjustable, and the detecting and receiving diffraction structure 3 has a dispersion effect, so that the diffraction angle of the laser signal transmitted to the detecting and receiving diffraction structure 3 can be changed along with the wavelength of the laser signal, therefore, the direction of the laser signal emitted from the detecting and receiving diffraction structure 3 can be adjusted by adjusting the wavelength of the laser signal output by the wavelength scanning light source, and multi-directional detection is realized. Therefore, the on-chip integrated ranging chip can realize multi-direction detection without depending on an additional mechanical structure, and has smaller volume and higher integration level. Specifically, the diffraction angle θ of the laser signal transmitted to the detecting and receiving diffractive structure 3 is proportional to the wavelength λ of the laser signal, i.e., sin θ ∞ λ.
Example 6
Referring to fig. 6, the present embodiment provides an on-chip integrated ranging chip, which is different from the on-chip integrated ranging chip provided in embodiment 5 in that:
the detecting and receiving diffraction structure 3' includes an emitting diffraction unit 31 and a receiving diffraction unit 32 which are spaced apart from each other, the emitting diffraction unit 31 is connected to the output end of the detecting light transmission member 6, the emitting diffraction unit 31 is adapted to emit the laser signal to the target object, the receiving diffraction unit 32 is connected to the input end of the echo transmission member 8, and the receiving diffraction unit 32 is adapted to receive the laser signal reflected by the target object. The detection and reception diffraction structure 3' separates the transmission and reception of the laser signals, so that the transmission and reception of the laser signals are not affected mutually, the transmission and reception of the laser signals can be carried out simultaneously, a time window for transmitting the laser signals or a time window for receiving the laser signals does not need to be reserved, and the detection efficiency and the detection sensitivity are higher.
Specifically, the emission diffraction unit 31 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the receiving diffraction unit 32 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating.
Further, in an embodiment, a crosstalk prevention structure (not shown in the figure) may be further disposed between the transmitting diffraction unit 31 and the receiving diffraction unit 32 to reduce optical crosstalk between the laser signal to be transmitted in the transmitting diffraction unit 31 and the laser signal received by the receiving diffraction unit 32. Specifically, the crosstalk prevention structure may be a trench formed on the surface of the semiconductor substrate 1.
Example 7
Referring to fig. 7, the present embodiment provides an on-chip integrated ranging chip, including: a semiconductor substrate 1; the laser detection device comprises a laser emitting part 2, a detection receiving diffraction structure 3 and an analysis module 4, wherein the laser emitting part 2, the detection receiving diffraction structure 3 and the analysis module 4 are arranged on one side surface of the semiconductor substrate 1, the detection receiving diffraction structure 3 is suitable for receiving a laser signal output by the laser emitting part 2, emitting the laser signal to a target object and receiving the laser signal reflected by the target object, and the analysis module 4 is suitable for obtaining the flight time of the laser signal and calculating the distance of the target object according to the flight time.
In the present embodiment, the material of the semiconductor substrate 1 includes, but is not limited to, a group III-V semiconductor material and a silicon-based material. In the present embodiment, the laser emitter 2 and the analysis module 4 are fixed to the surface of the semiconductor substrate 1, respectively; specifically, the laser emitter 2 and the analysis module 4 are mixedly integrated on the surface of the semiconductor substrate 1. The detection receiving diffraction structure 3 is prepared on the surface of the semiconductor substrate 1.
In this embodiment, the on-chip integrated ranging chip further includes:
a detection light transmission member 6, wherein the detection light transmission member 6 is connected with the output end of the laser emitting member 2 and the input end of the detection receiving diffraction structure 3, and the detection light transmission member 6 is suitable for transmitting the laser signal output by the laser emitting member 2;
an echo transmission member 8, an input end of the echo transmission member 8 is connected with the detection and reception diffraction structure 3, and the echo transmission member 8 is suitable for transmitting the laser signal reflected by the target received by the detection and reception diffraction structure 3;
the input end of the first photoelectric detection piece 9 is connected with the output end of the echo transmission piece 8, and the first photoelectric detection piece 9 is suitable for converting the laser signal reflected by the target into a first electric signal;
a first electrical transmission element 11, said first electrical transmission element 11 connecting an output of said first photodetection element 9 and an input of said analysis module 4, said first electrical transmission element 11 being adapted to transmit said first electrical signal;
a third electrical transmission element 13, said third electrical transmission element 13 connecting the output of said analysis module 4 and the input of said laser emitting element 2; the analysis module 4 is adapted to output a control signal to control the laser emitting device 2 to output a laser signal, and the third electrical transmission device 13 is adapted to transmit the control signal.
In this embodiment, the time of flight is a time interval between the laser emitting device 2 outputting the laser signal and the analysis module 4 receiving the first electrical signal. Specifically, the analysis module 4 includes a control unit, a receiving unit, a storage unit and a calculation unit; the control unit is suitable for sending out a control signal, the receiving unit is suitable for receiving the first electric signal, the storage unit is suitable for recording the moment when the receiving unit receives the first electric signal and the moment when the laser emitting component 2 outputs the laser signal, and the calculating unit is suitable for calculating the time interval between the two moments so as to obtain the flight time.
Specifically, the detection light transmission member 6 and the echo transmission member 8 are both waveguides, the waveguides are prepared on the surface of the semiconductor substrate 1, and the waveguides and the semiconductor substrate 1 are of an integrated structure. The first photoelectric detection element 9 is a photodetector or an optical trigger, the photodetector can be an avalanche photodiode or an optical switch, and the first photoelectric detection element 9 is mixedly integrated on the surface of the semiconductor substrate 1. The first electrical transmission element 11 comprises a conductive wire, and the first electrical transmission element 11 can be formed on the surface of the semiconductor substrate 1 through deposition and etching steps; the third electrical transmission element 13 includes a conductive wire, and the third electrical transmission element 13 may be formed on the surface of the semiconductor substrate 1 through deposition and etching steps.
In the present embodiment, the detection light transmitting member 6, the echo transmitting member 8, the first photodetection member 9, the first electrical transmitting member 11, the third electrical transmitting member 13, the laser emitting member 2, the detection reception diffraction structure 3, and the analysis module 4 are located on the same side of the semiconductor substrate 1.
In the present embodiment, the detection reception diffraction structure 3 includes: a detection and reception diffraction unit 33 and a coupling unit 34, wherein one end of the coupling unit 34 is connected to the detection and reception diffraction unit 33, the other end of the coupling unit 34 is connected to the output end of the detection light transmission member 6 and the input end of the echo transmission member 8, and the detection and reception diffraction unit 33 is adapted to transmit the laser signal to a target and receive the laser signal reflected by the target. The detection signal transmitted along the detection light transmitting member 6 enters the detection reception diffraction unit 33 through the coupling unit 34 and is then emitted toward the target object; the detection signal is reflected by the target object to obtain an echo signal, and the echo signal is received by the detection receiving diffraction unit 33, enters the echo transmission member 8 through the coupling unit 34, and is then transmitted to the first photoelectric detection member 9 along the echo transmission member 8.
Specifically, the detecting and receiving diffraction unit 33 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the coupling unit 34 is a 1 × 2 multimode interference coupler, a 1 × 2 directional coupler, a ring cavity coupler, a star coupler, a fresnel lens array based on a slab waveguide, a superlens array based on a slab waveguide, or a half-mirror.
Further, in one embodiment, the laser signal is a pulsed laser signal comprising pulsed signals emitted at intervals; the analysis module 4 is adapted to obtain the time of flight of each of the pulse signals and to calculate the average speed of movement of the object during the time interval in which the laser emitting member 2 emits the pulse signal. On the premise of not influencing the detection performance of the on-chip integrated ranging chip, the smaller the time interval of the pulse signal emitted by the laser emitting part 2 is, the closer the calculated average speed is to the real-time moving speed of the target.
Specifically, after the pulse signal is reflected to the detecting and receiving diffraction unit 33 by the target object, the pulse signal is finally converted into a first pulse electrical signal by the first photoelectric detector 9, and then the first pulse electrical signal is transmitted to the analysis module 4 along the first electrical transmission member 11; the storage unit is suitable for recording the transmitting sequence of the pulse signals, the time when the laser transmitter 2 outputs each pulse signal and the time when the receiving unit receives each first pulse electric signal, and the calculating unit is suitable for corresponding a plurality of times when the pulse signals are output to a plurality of times when the first pulse electric signals are received according to the transmitting sequence of the pulse signals, so that the flight time of each pulse signal is obtained, the distance of the target corresponding to the output time of each pulse signal is further obtained, and finally the average moving speed of the target in the time interval when the laser transmitter 2 transmits the pulse signals is calculated.
Further, in one embodiment, the laser emitting member 2 is a wavelength-scanning light source. The wavelength of the laser signal output by the wavelength scanning light source is adjustable, and the detecting and receiving diffraction structure 3 has a dispersion effect, so that the diffraction angle of the laser signal transmitted to the detecting and receiving diffraction structure 3 can be changed along with the wavelength of the laser signal, therefore, the direction of the laser signal emitted from the detecting and receiving diffraction structure 3 can be adjusted by adjusting the wavelength of the laser signal output by the wavelength scanning light source, and multi-directional detection is realized. Therefore, the on-chip integrated ranging chip can realize multi-direction detection without depending on an additional mechanical structure, and has smaller volume and higher integration level. Specifically, the diffraction angle θ of the laser signal transmitted to the detecting and receiving diffractive structure 3 is proportional to the wavelength λ of the laser signal, i.e., sin θ ∞ λ.
Example 8
Referring to fig. 8, the present embodiment provides an on-chip integrated ranging chip, which is different from the on-chip integrated ranging chip provided in embodiment 7 in that:
the detecting and receiving diffraction structure 3' includes an emitting diffraction unit 31 and a receiving diffraction unit 32 which are spaced apart from each other, the emitting diffraction unit 31 is connected to the output end of the detecting light transmission member 6, the emitting diffraction unit 31 is adapted to emit the laser signal to the target object, the receiving diffraction unit 32 is connected to the input end of the echo transmission member 8, and the receiving diffraction unit 32 is adapted to receive the laser signal reflected by the target object. The detection and reception diffraction structure 3' separates the transmission and reception of the laser signals, so that the transmission and reception of the laser signals are not affected mutually, the transmission and reception of the laser signals can be carried out simultaneously, a time window for transmitting the laser signals or a time window for receiving the laser signals does not need to be reserved, and the detection efficiency and the detection sensitivity are higher.
Specifically, the emission diffraction unit 31 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating; the receiving diffraction unit 32 is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating.
Further, in an embodiment, a crosstalk prevention structure (not shown in the figure) may be further disposed between the transmitting diffraction unit 31 and the receiving diffraction unit 32 to reduce optical crosstalk between the laser signal to be transmitted in the transmitting diffraction unit 31 and the laser signal received by the receiving diffraction unit 32. Specifically, the crosstalk prevention structure may be a trench formed on the surface of the semiconductor substrate 1.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (15)

1. An on-chip integrated ranging chip, comprising:
a semiconductor substrate;
the laser detection device comprises a laser emitting piece, a detection receiving diffraction structure and an analysis module, wherein the laser emitting piece, the detection receiving diffraction structure and the analysis module are arranged on one side surface of the semiconductor substrate, the detection receiving diffraction structure is suitable for receiving a laser signal output by the laser emitting piece, emitting the laser signal to a target object and receiving the laser signal reflected by the target object, and the analysis module is suitable for obtaining the flight time of the laser signal and calculating the distance of the target object according to the flight time.
2. The integrated on-chip ranging chip of claim 1, wherein the laser emitting member is a wavelength scanning light source.
3. The on-chip integrated ranging chip of claim 1 or 2, wherein the laser signal is a pulsed laser signal, the pulsed laser signal comprising pulse signals emitted at intervals; the analysis module is adapted to obtain a time of flight of each of the pulse signals and calculate an average velocity of movement of the target over the time interval during which the laser emitting member emits the pulse signal.
4. The integrated range chip of claim 1, further comprising:
the input end of the coupling piece is connected with the output end of the laser emitting piece, and the coupling piece is suitable for dividing the laser signal output by the laser emitting piece into a detection signal and a reference signal;
the optical transmission assembly is positioned on one side surface of the semiconductor substrate and comprises a detection optical transmission piece, a reference optical transmission piece and an echo transmission piece; the input end of the detection light transmission piece is connected with the output end of the coupling piece, the output end of the detection light transmission piece is connected with the detection receiving diffraction structure, and the detection light transmission piece is suitable for transmitting the detection signal; the input end of the reference light transmission piece is connected with the output end of the coupling piece, and the reference light transmission piece is suitable for transmitting the reference signal; the input end of the echo transmission piece is connected with the detection receiving diffraction structure, and the echo transmission piece is suitable for transmitting the laser signal reflected by the target object and received by the detection receiving diffraction structure.
5. The on-chip integrated ranging chip of claim 4, wherein an output end of the reference light transmitting member is connected with an input end of the analysis module, and an output end of the echo transmitting member is connected with an input end of the analysis module;
the time of flight is a time interval from the analysis module receiving the laser signal reflected by the target object to the analysis module receiving the reference signal.
6. The on-chip integrated ranging chip of claim 4, further comprising:
the input end of the first photoelectric detection piece is connected with the output end of the echo transmission piece, and the first photoelectric detection piece is suitable for converting the laser signal reflected by the target object into a first electric signal;
a first electrical transmission member connecting an output of the first photodetection member and an input of the analysis module, the first electrical transmission member being adapted to transmit the first electrical signal;
the output end of the reference light transmission piece is connected with the input end of the second photoelectric detection piece, and the second photoelectric detection piece is suitable for converting the reference signal into a second electric signal;
a second electrical transmission member connecting an output of the second photodetection member and an input of the analysis module, the second electrical transmission member being adapted to transmit the second electrical signal;
the time of flight is the time interval between the analysis module receiving the first electrical signal and the analysis module receiving the second electrical signal.
7. The integrated range-finding chip of claim 6 wherein the first and second photo-detecting elements are both photo-detectors or optical triggers.
8. The integrated range finding chip of claim 4 wherein the light delivery component is a waveguide that is a unitary structure with the semiconductor substrate;
the coupling pieces are 1 multiplied by 2 multimode interference couplers, 1 multiplied by 2 directional couplers, ring cavity couplers, star couplers, Fresnel lens arrays based on slab waveguides, superlens arrays based on slab waveguides or half-lenses.
9. The integrated range chip of claim 1, further comprising:
the detection light transmission piece is connected with the output end of the laser emitting piece and the input end of the detection receiving diffraction structure and is suitable for transmitting a laser signal output by the laser emitting piece;
the input end of the echo transmission piece is connected with the detection receiving diffraction structure, and the echo transmission piece is suitable for transmitting the laser signal reflected by the target object and received by the detection receiving diffraction structure;
a third electric transmission member connecting an output end of the analysis module and an input end of the laser emitting member; the analysis module is suitable for outputting a control signal to control the laser emitting component to output a laser signal, and the third electric transmission component is suitable for transmitting the control signal.
10. The on-chip integrated ranging chip of claim 9, wherein an output terminal of the echo transmission member is connected to an input terminal of the analysis module;
the flight time is the time interval between the laser emitting part outputting the laser signal and the analysis module receiving the laser signal reflected by the target object.
11. The on-chip integrated ranging chip of claim 9, further comprising:
the input end of the first photoelectric detection piece is connected with the output end of the echo transmission piece, and the first photoelectric detection piece is suitable for converting the laser signal reflected by the target object into a first electric signal;
a first electrical transmission member connecting an output of the first photodetection member and an input of the analysis module, the first electrical transmission member being adapted to transmit the first electrical signal;
the flight time is a time interval between the laser emitting part outputting the laser signal and the analysis module receiving the first electric signal.
12. The on-chip integrated ranging chip of any one of claims 4 to 11, wherein the probing and receiving diffraction structure comprises an emitting diffraction unit and a receiving diffraction unit which are spaced apart from each other, the emitting diffraction unit is connected to an output end of the probing light transmitting member, the emitting diffraction unit is adapted to emit the laser signal to the target, the receiving diffraction unit is connected to an input end of the echo transmitting member, and the receiving diffraction unit is adapted to receive the laser signal reflected by the target.
13. An on-chip integrated ranging chip according to any of claims 4 to 11 wherein the probe receiving diffractive structure comprises: the laser signal detection device comprises a detection receiving diffraction unit and a coupling unit, wherein one end of the coupling unit is connected with the detection receiving diffraction unit, the other end of the coupling unit is connected with the output end of the detection light transmission piece and the input end of the echo transmission piece, and the detection receiving diffraction unit is suitable for transmitting the laser signal to a target object and receiving the laser signal reflected by the target object.
14. The on-chip integrated ranging chip of claim 12, wherein the emission diffraction unit is a transmissive super surface, a reflective super surface, a transmissive surface diffraction unit, a transmissive volume grating or a reflective surface grating;
the receiving diffraction unit is a transmission-type super surface, a reflection-type super surface, a transmission-type surface diffraction unit, a transmission-type volume grating or a reflection-type surface grating.
15. The on-chip integrated ranging chip of claim 13, wherein the detecting and receiving diffraction unit is a transmissive super surface, a reflective super surface, a transmissive surface diffraction unit, a transmissive volume grating or a reflective surface grating;
the coupling unit is a 1 × 2 multi-mode interference coupler, a 1 × 2 directional coupler, a ring cavity coupler, a star coupler, a Fresnel lens array based on a slab waveguide, a super lens array based on a slab waveguide or a half-mirror.
CN202111251757.4A 2021-10-25 2021-10-25 On-chip integrated distance measuring chip Pending CN113960619A (en)

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