CN113948970A - Spectrum beam combining device based on rear cavity external cavity spectrum regulation and control - Google Patents
Spectrum beam combining device based on rear cavity external cavity spectrum regulation and control Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
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- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
- H01S5/0085—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for modulating the output, i.e. the laser beam is modulated outside the laser cavity
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
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Abstract
The invention provides a spectrum beam combining device based on rear cavity external cavity spectrum regulation, which comprises a semiconductor laser system, a rear cavity external cavity spectrum regulation system and a front cavity common aperture beam combining system, wherein the rear cavity external cavity spectrum regulation system receives a laser beam array output by one side of the semiconductor laser system for modulation and feeds back the laser beam array to the semiconductor laser system, so that the laser beam array output by the other side of the semiconductor laser system is respectively regulated and controlled at certain spectrum intervals and is locked on different central wavelengths, and the spectrum width of each laser beam in the array is narrowed; and the front cavity common-aperture beam combining system performs common-aperture beam combining on the laser beam array output by the other side of the semiconductor laser system and outputs the combined laser beam array. The scheme provided by the invention realizes the decoupling of spectrum regulation and control and the output of the beam combining with the common aperture, realizes the dense arrangement of the spectrum and simultaneously improves the beam combining efficiency; the rear cavity outer cavity adopts a total reflection mirror to carry out laser feedback, and more stable and reliable spectrum regulation and control are realized.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a spectrum beam combining device based on rear cavity external cavity spectrum regulation.
Background
The semiconductor laser has the advantages of wide wavelength coverage range, high electro-optic conversion efficiency, small volume, low cost, long service life and the like, and has wide application prospect in multiple fields of military and national defense, industrial processing, health care, scientific research and the like. However, the direct application of the conventional commercial semiconductor laser unit is limited by the defects of low output power, poor beam quality and the like. The common-aperture spectrum synthesis technology based on the diffraction element can ensure high beam quality while realizing semiconductor laser output power amplification, theoretically, the quality of the synthesized beam is equivalent to that of a single light-emitting unit participating in synthesis, and an article named as Spectral beam combining of a broad-beam-stripe laser array in an external cavity, Daneu V.S., Sanchez A.S., Fan T.Y.et al optics Letters, 2000, 25(6), 405-one 407. has described the basic principle in detail, and the technology has attracted wide attention of domestic and foreign research institutions in recent years.
The spectrum synthesis technology directly utilizes the semiconductor laser to form a high-efficiency and compact laser system without the conversion process of intermediate pumping, so that the beam quality of the synthesized laser is equivalent to that of the sub-light-emitting units participating in synthesis, the defect of poor beam quality of the semiconductor laser is overcome, and the light-emitting brightness of the semiconductor laser is greatly improved. At present, the existing semiconductor laser spectrum synthesis laser system usually adopts a front cavity outer cavity closed-loop beam combination method, which can simultaneously realize spectrum locking, regulation and control and common aperture beam combination by using one outer cavity, but because the front cavity outer cavity mirror is simultaneously responsible for realizing laser beam feedback spectrum locking, regulation and control and common aperture spectrum combined beam output, the spectrum locking, regulation and control and common aperture combined beam are tightly coupled together, thereby presenting the conditions of mutual influence and restriction, and the result thereof, namely the outer cavity mirror with high reflectivity has more stable feedback spectrum locking effect, but the output power is limited; a low reflectivity external cavity mirror will effectively boost the output power but will reduce the stability of the feedback spectral lock.
Disclosure of Invention
Aiming at the problems of insufficient conversion efficiency, poor spectrum regulation and control stability and the like in the conventional common-aperture spectrum synthesis technology directly based on a chip, a technical scheme of a spectrum beam combining device based on rear cavity external cavity spectrum regulation and control is provided.
The technical scheme adopted by the invention is as follows:
a spectrum beam combining device based on rear cavity external cavity spectrum regulation comprises a semiconductor laser system, a rear cavity external cavity spectrum regulation system and a front cavity common-aperture beam combining system, wherein laser beam arrays are simultaneously output from two sides of the semiconductor laser system; the rear cavity external cavity spectrum regulation and control system and the front cavity common-aperture beam combining system are respectively arranged at two sides of the semiconductor laser system; the rear cavity external cavity spectrum regulating and controlling system receives the laser beam array output by one side of the semiconductor laser system, modulates and feeds back the laser beam array to the semiconductor laser system, so that the laser beam array output by the other side of the semiconductor laser system is respectively regulated and controlled at certain spectral intervals and locked on different central wavelengths, and the spectral width of each laser beam in the array is narrowed; and the front cavity common-aperture beam combining system performs common-aperture beam combining on the laser beam array output by the other side of the semiconductor laser system and outputs the combined laser beam array.
Furthermore, the semiconductor laser system comprises a semiconductor laser array, a rear cavity beam shaping device and a front cavity beam shaping device, wherein laser beam arrays can be generated on two sides of the semiconductor laser array, the laser beam array on one side is shaped by the rear cavity beam shaping device and then output to the rear cavity external cavity spectrum regulating and controlling system, and the laser beam array on the other side is shaped by the front cavity beam shaping device and then output to the front cavity common-aperture beam combining system.
Furthermore, the rear cavity external cavity spectrum regulating and controlling system comprises a rear cavity conversion lens, a rear cavity grating and an external cavity mirror, the laser beam array is diffracted on the rear cavity grating through the rear cavity conversion lens, the diffracted laser beams are fed back through the external cavity mirror and form a resonant cavity with a front cavity of the semiconductor laser, and therefore lasers at different positions on the semiconductor laser array emit laser beams with different wavelengths.
Furthermore, the external cavity mirror is a plane mirror and is plated with a strong light high-reflectivity film system.
Furthermore, the front-cavity common-aperture beam combining system is realized by adopting a front-cavity single-grating common-aperture beam combining system or a front-cavity double-grating common-aperture beam combining system.
Furthermore, the front-cavity single-grating common-aperture beam combination system comprises a front-cavity conversion lens and a front-cavity grating, and the laser beam array is superposed on the front-cavity grating through the front-cavity conversion lens and is emitted in the same direction through grating diffraction.
Furthermore, the front-cavity double-grating common-aperture beam combining system comprises a first grating and a second grating, wherein the first grating and the second grating are arranged in parallel, the central wavelengths of the first grating and the second grating are the same as the groove density, and the external dimensions are matched with the clear aperture; the laser beam array is incident on the first grating according to a specific angle and is diffracted, different laser beams are completely overlapped on the second grating and are emitted along the same direction through diffraction of the second grating.
Furthermore, the semiconductor laser array adopts any one of a wide emitting surface semiconductor laser, a narrow ridge semiconductor laser, a conical semiconductor laser, an MOPA semiconductor laser, a photonic crystal semiconductor laser and an ultra-large/large optical cavity semiconductor laser, and the front cavity surface and the rear cavity surface of the semiconductor laser array can output laser beam arrays.
Furthermore, the rear cavity beam shaping device and the front cavity beam shaping device adopt any one of a fast axis collimating lens, a slow axis collimating lens and an aspheric surface collimating lens.
Furthermore, the rear cavity conversion lens and the front cavity conversion lens adopt transmission type or reflection type cylindrical lenses and are plated with strong light resistant and anti-reflection films;
furthermore, the back cavity grating adopts a transmission grating or a reflection grating.
Furthermore, the reticle density parameter of the front cavity grating is matched with the focal length parameter of the front cavity conversion lens and the central wavelength interval parameter of the laser beam array output by the semiconductor laser system.
Compared with the prior art, the beneficial effects of adopting the technical scheme are as follows:
(1) the scheme adopts the idea of combining the light path and the front cavity by adopting the rear cavity outer cavity to realize spectrum locking and regulation, realizes the decoupling of spectrum regulation and combined beam output of the common aperture, ensures that the spectrum regulation and the combined beam output are not influenced and restricted mutually, and further effectively improves the integral output performance of the system.
(2) Because the rear cavity is not the laser output cavity surface, the total reflection mirror is adopted for laser feedback, compared with the traditional semi-transparent semi-reflection mirror used for front cavity feedback, the laser feedback intensity is improved, more stable and reliable spectrum regulation and control can be realized, and the system stability is improved. Compared with the traditional front cavity and external cavity common-aperture spectrum beam combining structure, the structure has the advantages.
Drawings
Fig. 1 is a schematic diagram of a spectrum beam combining device based on rear cavity external cavity spectrum regulation and control according to the present invention.
Fig. 2 is a schematic diagram of another spectrum beam combining device based on rear cavity external cavity spectrum regulation according to the present invention.
Reference numerals: the system comprises an A-semiconductor laser system, a B-rear cavity external cavity spectrum regulation and control system, a C1-front cavity common aperture beam combination system composition structure in embodiment 1, a C2-front cavity common aperture beam combination system composition structure in embodiment 2, a 1-semiconductor laser array, a 2-rear cavity light beam shaping device, a 3-rear cavity conversion lens, a 4-rear cavity grating, a 5-external cavity mirror, a 6-front cavity light beam shaping device, a 7-front cavity conversion lens, an 8-front cavity grating, a 9-first grating and a 10-second grating.
Detailed Description
The invention is further described below with reference to the accompanying drawings.
Example 1
As shown in fig. 1, the present embodiment provides a spectrum beam combining device based on rear cavity external cavity spectrum regulation, which includes a semiconductor laser system a, a rear cavity external cavity spectrum regulation system B, and a front cavity common aperture beam combining system C1, where two sides of the semiconductor laser system a output laser beam arrays simultaneously; the rear cavity external cavity spectrum regulating system B and the front cavity common-aperture beam combining system C1 are respectively arranged at two sides of the semiconductor laser system A;
specifically, the semiconductor laser system a is composed of a semiconductor laser array 1, a back cavity beam shaping device 2 and a front cavity beam shaping device 6.
The rear cavity external cavity spectrum regulating and controlling system B is composed of a rear cavity conversion lens 3, a rear cavity grating 4 and an external cavity mirror 5; the laser beam array generated by the semiconductor laser array is diffracted on the rear cavity grating 4 through the rear cavity transformation lens 3, the diffracted laser beam is fed back through the outer cavity mirror 5 to form a resonant cavity with the front cavity of the semiconductor laser, and therefore lasers at different positions on the semiconductor laser array 1 emit laser beams with different wavelengths.
Preferably, the external cavity mirror adopts a plane mirror and is plated with a strong light high-reflectivity film system.
The front cavity common-aperture beam combination system C1 is a front cavity single-grating common-aperture beam combination system, and comprises a front cavity conversion lens 7 and a front cavity grating 8, wherein the laser beam array is superposed on the front cavity grating 8 through the front cavity conversion lens 7 and is diffracted by the front cavity grating to be emitted along the same direction.
The front cavity surface and the rear cavity surface of the semiconductor laser array 1 are plated with antireflection films, the rear cavity beam shaping device 2 is a piece or a group of lenses plated with strong light-resistant antireflection films, the rear cavity conversion lens 3 and the front cavity conversion lens 7 are cylindrical lenses, the materials are fused quartz, the strong light-resistant antireflection films are plated, and the residual reflectivity is less than 0.5%.
The rear cavity grating 4 and the front cavity grating 8 are transmission type plane gratings, the substrate material is fused quartz, and parameters such as the central wavelength, the grating constant and the like are matched with parameters such as the central wavelength of the semiconductor laser array 1, the interval of the light emitting units, the focal length of the rear cavity conversion lens 3, the focal length of the front cavity conversion lens 7 and the like. The front/back light-emitting surface of the semiconductor laser light source, the back cavity grating 4 and the front cavity grating 8 are respectively arranged on the front and back focal planes of the back cavity conversion lens 3 and the front cavity conversion lens 7.
The working principle of the spectrum beam combining device in the embodiment is as follows:
the rear cavity external cavity spectrum regulating and controlling system receives the laser beam array output by one side of the semiconductor laser system, modulates and feeds back the laser beam array to the semiconductor laser system, so that the laser beam array output by the other side of the semiconductor laser system is respectively regulated and controlled at certain spectral intervals and locked on different central wavelengths, and the spectral width of each laser beam in the array is narrowed; and the front cavity common-aperture beam combining system performs common-aperture beam combining on the laser beam array output by the other side of the semiconductor laser system and outputs the combined laser beam array.
Example 2
As shown in fig. 2, the present embodiment provides a spectrum beam combining device based on rear cavity external cavity spectrum regulation, which includes a semiconductor laser system a, a rear cavity external cavity spectrum regulation system B, and a front cavity common aperture beam combining system C2, where two sides of the semiconductor laser system a output laser beam arrays simultaneously; the rear cavity external cavity spectrum regulating system B and the front cavity common-aperture beam combining system C2 are respectively arranged at two sides of the semiconductor laser system A;
in this embodiment, the composition and working process of the semiconductor laser system a and the rear cavity external cavity spectrum regulation and control system B are completely the same as those of embodiment 1, and the composition and principle of the front cavity common aperture beam combining system C2 are different.
Specifically, the front-cavity common-aperture beam combining system C2 is a front-cavity dual-grating common-aperture beam combining system, and includes a first grating 9 and a second grating 10, the first grating 9 and the second grating 10 are placed in parallel, the central wavelengths of the first grating 9 and the second grating 10 are the same as the reticle density, and the external dimensions are matched with the clear aperture; the laser beam array is incident on the first grating 9 according to a specific angle and is diffracted, different laser beams are completely overlapped on the second grating 10 and are emitted along the same direction through diffraction of the second grating.
The first grating 9 is a reflection type plane grating, the substrate material is fused quartz, and the diffraction efficiency is more than 95%. The second grating 10 is a reflection type plane grating, the substrate material is fused quartz, parameters such as central wavelength, grating constant and the like are completely the same as those of the first grating, and the diffraction efficiency is more than 95%. The first grating 9 and the second grating 10 are arranged in parallel, and parameters such as grating spacing, center wavelength, grating constant and the like are matched with parameters such as center wavelength, light emitting unit interval and the like of the semiconductor laser array 1. The distance between the semiconductor laser array 1 and the first grating 9 is not critical.
The invention decouples the two parts of external cavity spectrum locking, regulation and control and common aperture beam combination, and sets up an independent external cavity-grating spectrum locking and regulation and control light path in the back cavity of the semiconductor laser light source, because the common aperture beam combination output is not needed to be realized from the back cavity, the external cavity spectrum locking and regulation and control with high stability can be realized because the external cavity mirror can adopt a total reflection mirror; meanwhile, an open-loop spectrum beam combining light path is built in a front cavity of the semiconductor laser light source, and because an outer cavity mirror does not exist in an open-loop structure, the output of the common-aperture spectrum beam combining light path with higher efficiency can be realized, and the reliability and the efficiency of the system are effectively improved.
The invention is not limited to the foregoing embodiments. The invention extends to any novel feature or any novel combination of features disclosed in this specification and any novel method or process steps or any novel combination of features disclosed. Those skilled in the art to which the invention pertains will appreciate that insubstantial changes or modifications can be made without departing from the spirit of the invention as defined by the appended claims.
All of the features disclosed in this specification, or all of the steps in any method or process so disclosed, may be combined in any combination, except combinations of features and/or steps that are mutually exclusive.
Any feature disclosed in this specification may be replaced by alternative features serving equivalent or similar purposes, unless expressly stated otherwise. That is, unless expressly stated otherwise, each feature is only an example of a generic series of equivalent or similar features.
Claims (10)
1. A spectrum beam combining device based on rear cavity external cavity spectrum regulation is characterized by comprising a semiconductor laser system, a rear cavity external cavity spectrum regulation system and a front cavity common-aperture beam combining system, wherein laser beam arrays are simultaneously output from two sides of the semiconductor laser system; the rear cavity external cavity spectrum regulation and control system and the front cavity common-aperture beam combining system are respectively arranged at two sides of the semiconductor laser system; the rear cavity external cavity spectrum regulating and controlling system receives the laser beam array output by one side of the semiconductor laser system, modulates and feeds back the laser beam array to the semiconductor laser system, so that the laser beam array output by the other side of the semiconductor laser system is respectively regulated and controlled at fixed spectrum intervals and locked on different central wavelengths, and the spectrum width of each laser beam in the array is narrowed; and the front cavity common-aperture beam combining system performs common-aperture beam combining on the laser beam array output by the other side of the semiconductor laser system and outputs the combined laser beam array.
2. The spectrum beam combining device based on rear cavity external cavity spectrum regulation and control as claimed in claim 1, characterized in that the semiconductor laser system comprises a semiconductor laser array, a rear cavity beam shaping device and a front cavity beam shaping device, wherein both sides of the semiconductor laser array can generate laser beam arrays, the laser beam arrays on one side are output to the rear cavity external cavity spectrum regulation and control system after being shaped by the rear cavity beam shaping device, and the laser beam arrays on the other side are output to the front cavity common aperture beam combining system after being shaped by the front cavity beam shaping device.
3. The spectrum beam combining device based on the rear cavity external cavity spectrum regulation and control as claimed in claim 1 or 2, wherein the rear cavity external cavity spectrum regulation and control system comprises a rear cavity conversion lens, a rear cavity grating and an external cavity mirror, the laser beam array is diffracted on the rear cavity grating through the rear cavity conversion lens, the diffracted laser beam is fed back through the external cavity mirror to form a resonant cavity with a front cavity of the semiconductor laser system, so that lasers at different positions on the semiconductor laser array emit laser beams with different wavelengths.
4. The spectrum beam combining device based on the rear cavity external cavity spectrum regulation and control as claimed in claim 3, wherein the external cavity mirror is a total reflection mirror and is plated with a strong light high-reflectivity film system.
5. The apparatus of claim 1, wherein the front cavity common aperture beam combining system comprises a front cavity single grating common aperture beam combining system or a front cavity double grating common aperture beam combining system.
6. The spectrum beam combining device based on the rear cavity external cavity spectrum regulation and control as claimed in claim 5, wherein the front cavity single grating common aperture beam combining system comprises a front cavity conversion lens and a front cavity grating, and the laser beam array is overlapped on the front cavity grating through the front cavity conversion lens and is emitted in the same direction through grating diffraction.
7. The spectrum beam combining device based on the rear-cavity external-cavity spectrum regulation and control as claimed in claim 5, wherein the front-cavity double-grating common-aperture beam combining system comprises a first grating and a second grating, the first grating and the second grating are arranged in parallel, the central wavelength of the first grating and the central wavelength of the second grating are the same as the groove density, and the external dimension is matched with the clear aperture; the laser beam array is incident on the first grating according to a set angle and is diffracted, different laser beams are completely overlapped on the second grating and are emitted along the same direction through diffraction of the second grating.
8. The spectrum beam combining device based on rear cavity external cavity spectrum regulation and control as claimed in claim 2, wherein the semiconductor laser array is any one of a wide emitting surface semiconductor laser, a narrow ridge semiconductor laser, a tapered semiconductor laser, a MOPA semiconductor laser, a photonic crystal semiconductor laser and an ultra-large/large optical cavity semiconductor laser, and the front cavity surface and the rear cavity surface of the semiconductor laser array can output laser beam arrays.
9. The spectrum beam combining device based on rear cavity external cavity spectrum regulation and control as claimed in claim 2, wherein the rear cavity beam shaping device and the front cavity beam shaping device adopt any one of a fast axis collimating lens, a slow axis collimating lens and an aspheric surface collimating lens.
10. The spectrum beam combining device based on rear cavity external cavity spectrum regulation and control of claim 3, characterized in that the rear cavity conversion lens and the front cavity conversion lens are transmission type or reflection type cylindrical lenses and are plated with strong light-resistant anti-reflection films; the back cavity grating adopts a transmission grating or a reflection grating.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114994933A (en) * | 2022-07-19 | 2022-09-02 | 中国科学院长春光学精密机械与物理研究所 | Spectral beam combining device and method |
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Application publication date: 20220118 |