CN113938109B - Surface acoustic wave filter packaging structure - Google Patents
Surface acoustic wave filter packaging structure Download PDFInfo
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- CN113938109B CN113938109B CN202111536132.2A CN202111536132A CN113938109B CN 113938109 B CN113938109 B CN 113938109B CN 202111536132 A CN202111536132 A CN 202111536132A CN 113938109 B CN113938109 B CN 113938109B
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- 238000004806 packaging method and process Methods 0.000 title description 7
- 238000010897 surface acoustic wave method Methods 0.000 title 1
- 229910000679 solder Inorganic materials 0.000 claims abstract description 75
- 239000003292 glue Substances 0.000 claims abstract description 53
- 239000011521 glass Substances 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 20
- 239000000853 adhesive Substances 0.000 claims description 17
- 230000001070 adhesive effect Effects 0.000 claims description 17
- 239000000084 colloidal system Substances 0.000 claims description 17
- 238000009434 installation Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
本发明提出了一种声表面滤波器封装结构。所述封装结构包括基体;所述基体内部设有两个胶体槽和金属导线层;所述两个胶体槽和金属导线层相通;所述金属导线层在延伸至基体底部外表面与基体底部的焊球电连接;所述两个胶体槽内灌入导电胶;所述导电胶与所述金属导线层接触相连;所述导电胶上表面高于所述基体的上表面;并且所述导电胶上粘结有焊点支柱;所述焊点支柱上设有芯片;所述芯片与所述基体和两个焊点支撑柱之间形成空隙,所述芯片的IDT功能区域设置于所述空隙内;所述基体上表面设有两个连接盘;所述连接盘上设有镂空玻璃支撑柱;所述芯片的两端内嵌于所述镂空玻璃支撑柱内;所述滤波芯片上方设有盖板;所述盖板与所述基体键合。
The invention provides a surface acoustic filter package structure. The encapsulation structure includes a base body; two glue grooves and a metal wire layer are arranged inside the base body; the two glue grooves and the metal wire layer are communicated; the metal wire layer extends to the outer surface of the base body bottom and the base body bottom. The solder balls are electrically connected; conductive glue is poured into the two glue grooves; the conductive glue is in contact with the metal wire layer; the upper surface of the conductive glue is higher than the upper surface of the base body; and the conductive glue A solder joint pillar is bonded on the solder joint pillar; a chip is arranged on the solder joint pillar; a gap is formed between the chip, the base body and the two solder joint support pillars, and the IDT functional area of the chip is arranged in the gap The upper surface of the base body is provided with two connection pads; the connection pads are provided with hollow glass support columns; both ends of the chip are embedded in the hollow glass support columns; a cover is arranged above the filter chip plate; the cover plate is bonded to the base body.
Description
技术领域technical field
本发明提出了一种声表面滤波器封装结构,属于滤波器技术领域。The invention provides a surface acoustic filter package structure, which belongs to the technical field of filters.
背景技术Background technique
目前,声表面滤波器主要的封装技术有金属封装、塑料封装、表面贴装、倒装焊等基板类封装或使用器件表面覆膜式封装。现有的这类滤波器封装结构存在以下缺点:由于芯片与基体之间需要通过焊点进行巩固连接,但是由于芯片与基体之间需要留有空隙,这就需要焊点具有一定的高度,当出现高度时,当芯片与基体之间存在外力影响时,就会导致焊点破裂,进而影响滤波器性能。虽然现有技术中通过槽体结构将所述焊点下放至槽体中对焊点进行保护,但是,由于焊点下放至槽体中,又要保证芯片与基体之间留有足够空隙,就会导致焊点长度加长,并且槽体边缘往往为直角边沿,反而在受到外力的情况下,容易形成焊点的断裂,影响滤波器性能。At present, the main packaging technologies of surface acoustic filters include metal packaging, plastic packaging, surface mount, flip-chip packaging and other substrate-based packaging or the use of device surface coating type packaging. The existing filter package structure of this type has the following disadvantages: since the chip and the base need to be solidly connected by solder joints, but since a gap needs to be left between the chip and the base, the solder joints need to have a certain height. When the height occurs, when there is an external force between the chip and the substrate, it will cause cracks in the solder joints, which will affect the filter performance. Although in the prior art, the solder joints are lowered into the slot body to protect the solder joints through the slot body structure, but since the solder joints are lowered into the slot body, it is necessary to ensure that there is enough space between the chip and the base body. The length of the solder joint will be lengthened, and the edge of the slot body is often a right-angled edge. On the contrary, under the condition of external force, it is easy to form the fracture of the solder joint, which affects the performance of the filter.
发明内容SUMMARY OF THE INVENTION
本发明提供了一种声表面滤波器封装结构,用以解决现有滤波器中芯片与基体之间的焊点容易断裂进而的问题,所采取的技术方案如下:The present invention provides a surface acoustic filter package structure, which is used to solve the problem that the solder joint between the chip and the substrate in the existing filter is easily broken. The technical solutions adopted are as follows:
一种声表面滤波器封装结构,所述封装结构包括基体;所述基体内部设有两个胶体槽和金属导线层;所述两个胶体槽和金属导线层相通;所述金属导线层在所述基体内部延伸至基体底部外表面,并与所述基体底部的焊球电连接;所述基体底部外表面设有一层钝化层;所述两个胶体槽内灌入导电胶;所述导电胶与所述金属导线层接触相连;所述导电胶上表面高于所述基体的上表面;并且所述导电胶上粘结有焊点支柱;所述焊点支柱上设有芯片;所述芯片与所述基体和两个焊点支撑柱之间形成空隙,所述芯片的IDT功能区域设置于所述空隙内;所述基体上表面设有两个连接盘;所述连接盘上设有镂空玻璃支撑柱;所述芯片的两端内嵌于所述镂空玻璃支撑柱内;所述滤波芯片上方设有盖板;所述盖板与所述基体键合。An encapsulation structure of a surface acoustic filter, the encapsulation structure includes a base body; two glue grooves and a metal wire layer are arranged inside the base body; the two glue grooves and the metal wire layer are communicated; The interior of the base extends to the outer surface of the bottom of the base, and is electrically connected to the solder balls at the bottom of the base; the outer surface of the base is provided with a passivation layer; the two colloid grooves are filled with conductive glue; the conductive The glue is in contact with the metal wire layer; the upper surface of the conductive glue is higher than the upper surface of the base body; and the conductive glue is bonded with a solder joint support; the solder joint support is provided with a chip; the A gap is formed between the chip, the base and the two solder joint support columns, and the IDT functional area of the chip is arranged in the gap; the upper surface of the base is provided with two connection pads; the connection pads are provided with A hollow glass support column; both ends of the chip are embedded in the hollow glass support column; a cover plate is arranged above the filter chip; the cover plate is bonded with the base body.
进一步地,所述焊点支撑柱两侧分别设有支撑辅助片;所述支撑辅助片外侧设有导电胶柱;所述导电胶柱与所述导电胶高于所述基体的上表面的胶体部分黏连。Further, two sides of the solder joint support column are respectively provided with supporting auxiliary sheets; the outer side of the supporting auxiliary sheet is provided with a conductive glue column; the conductive glue column and the conductive glue are higher than the colloid on the upper surface of the base body Partial adhesion.
进一步地,所述支撑辅助片的长度满足如下条件:Further, the length of the supporting auxiliary sheet satisfies the following conditions:
其中,H p 表示支撑辅助片的长度;D表示焊点支撑柱的宽度;H表示焊点支撑柱的高度;h表示所述导电胶高于所述基体的上表面的胶体部分的高度;α和β表示高度调整系数,且,α取值范围为0.64-0.78;β取值范围为2.3-3.5。Wherein, H p represents the length of the supporting auxiliary piece; D represents the width of the solder joint support column; H represents the height of the solder joint support column; h represents the height of the colloid part of the conductive adhesive higher than the upper surface of the base body; α and β represent the height adjustment coefficient, and the value range of α is 0.64-0.78; the value range of β is 2.3-3.5.
进一步地,所述导电胶柱的高度要超过所述支撑辅助片安装高度的0.67倍位置。Further, the height of the conductive glue column should exceed 0.67 times the installation height of the supporting auxiliary sheet.
进一步地,所述导电胶高于所述基体的上表面的胶体部分的高度满足如下关系:Further, the height of the conductive adhesive higher than the colloidal portion of the upper surface of the base body satisfies the following relationship:
0.075H<h<0.15H 0.075H < h < 0.15H
其中,h表示所述导电胶高于所述基体的上表面的胶体部分的高度;H表示焊点支撑柱的高度。Wherein, h represents the height of the conductive adhesive higher than the colloidal portion of the upper surface of the base; H represents the height of the solder joint support column.
进一步地,所述胶体槽包括第一梯形结构和第二梯形结构;所述第一梯形结构的下底和第二梯形结构的下底对合相通;所述第一梯形结构的高和下底尺寸大于所述第二梯形结构的高和下底尺寸;所述第一梯形结构的上底与所述焊点支撑柱相连;所述第二梯形结构的上底与所述金属导线层连接。Further, the colloid tank includes a first trapezoidal structure and a second trapezoidal structure; the lower bottom of the first trapezoidal structure and the lower bottom of the second trapezoidal structure are in contact with each other; the height and the lower bottom of the first trapezoidal structure The dimensions are larger than the height and the lower base of the second trapezoid structure; the upper base of the first trapezoid structure is connected to the solder joint support column; the upper base of the second trapezoid structure is connected to the metal wire layer.
进一步地,所述第一梯形结构的下底的底面和所述第二梯形结构的下底的底面均为正方形结构;所述第一梯形结构的下底底面的边长与所述第二梯形结构的下底底面的边长之比的范围为1:0.92-1:0.83;优选为1:0.85;所述第一梯形结构的高和所述第二梯形结构的高的比值为11:9。Further, the bottom surface of the lower bottom of the first trapezoidal structure and the bottom surface of the lower bottom of the second trapezoidal structure are both square structures; The ratio of the side length of the lower bottom surface of the structure is 1:0.92-1:0.83; preferably 1:0.85; the ratio of the height of the first trapezoid structure to the height of the second trapezoid structure is 11:9 .
进一步地,所述镂空玻璃支撑柱包括两个镂空侧壁和一个平面侧壁;所述两个镂空侧壁和一个平面侧壁依次相互垂直连接设置;所述两个镂空侧壁分别抵置于所述滤波芯片的前后侧壁上;所述平面侧壁抵置在所述滤波芯片的两端端壁上。Further, the hollow glass support column includes two hollow side walls and one plane side wall; the two hollow side walls and the one plane side wall are arranged in a vertical connection with each other in sequence; the two hollow side walls are respectively abutted against each other. on the front and rear side walls of the filter chip; the plane side walls abut on the end walls at both ends of the filter chip.
进一步地,所述镂空侧壁与所述连接盘相连的一侧底边上设有直角梯形镂空结构;所述直角梯形镂空结构上设有倾斜梁;所述倾斜梁与所述镂空侧壁顶边之间设有一角设有矩形凸起的平行四边形镂空结构;其中,所述平行四边形镂空结构的设有矩形凸起的一角为靠近所述滤波芯片的侧壁中心位置的一角;所述镂空侧壁的顶边靠近所述滤波芯片的侧壁中心位置的一侧上设有直角梯形延展部;所述平行四边形镂空结构的一侧设有承载凸起,所述承载凸起用于承载所述滤波芯片。Further, a right-angle trapezoidal hollow structure is provided on the bottom edge of the side where the hollow side wall is connected with the connecting plate; an inclined beam is arranged on the right-angle trapezoidal hollow structure; the inclined beam is connected to the top of the hollow side wall. A parallelogram hollow structure with a rectangular protrusion is arranged at one corner between the sides; wherein, the corner of the parallelogram hollow structure with the rectangular protrusion is a corner close to the center of the side wall of the filter chip; the hollow A right-angled trapezoidal extension is provided on the side of the top edge of the sidewall close to the center of the sidewall of the filter chip; a bearing protrusion is provided on one side of the parallelogram hollow structure, and the bearing protrusion is used to carry the filter chip.
进一步地,所述直角梯形镂空结构的长底边与所述平行四边形镂空结构的长边之比为1:2;所述直角梯形镂空结构的短底边与所述平行四边形镂空结构的长边之比为1:3;所述矩形凸起为正方形凸起,所述正方形凸起的边长的取值范围为:0.15h l ≤L≤0.18h l ,其中,h l 表示所述平行四边形镂空结构的高。Further, the ratio of the long base of the right-angled trapezoidal hollow structure to the long side of the parallelogram hollow structure is 1:2; the short base of the right-angled trapezoidal hollow structure and the long side of the parallelogram hollow structure are The ratio is 1:3; the rectangular protrusion is a square protrusion, and the value range of the side length of the square protrusion is: 0.15 h l ≤ L ≤ 0.18 h l , where h l represents the parallelogram High openwork structure.
本发明有益效果:Beneficial effects of the present invention:
本发明提出的一种声表面滤波器封装结构通过两个梯形结构相对设置的胶体槽、导电胶柱和支撑辅助片的结构和尺寸设置相结合能够在焊点支撑柱收到外力影响时,通过胶体槽对和导电胶柱、支撑辅助片对焊点支撑柱所述进行有效支撑,极大程度上提高焊点支撑柱的稳固性,有效防止焊点支撑柱发生破裂。同时,由于焊点支撑柱安装于所述胶体槽外面,能够有效缩短所述焊点支撑柱的长度提高其稳固性,并且,当出现外力作用时,所述胶体槽的外沿无法对所述焊点支撑柱产生影响,进一步降低了焊点支撑柱的折断破损率。另一方面,通过镂空玻璃支撑柱对滤波芯片进行支撑,并且,通过镂空玻璃支撑柱的镂空结构在芯片收到外力影响时,能够将外力进行有效的分解,弱化外力对芯片振动的影响力,从而减小芯片在外力作用向的位移幅度,进而降低对焊点支撑柱的扭动和位移影响,进一步提高焊点支撑柱的防破损性。The encapsulation structure of the surface acoustic filter proposed by the present invention, through the combination of the structure and size of the colloidal groove, the conductive glue column and the supporting auxiliary sheet, which are arranged oppositely in the two trapezoidal structures, can be passed when the support column of the solder joint is affected by an external force. The colloid tank pair, the conductive glue column, and the supporting auxiliary sheet effectively support the solder joint support column, which greatly improves the stability of the solder joint support column and effectively prevents the solder joint support column from cracking. At the same time, since the solder joint support column is installed outside the colloid tank, the length of the solder joint support column can be effectively shortened to improve its stability, and when an external force acts, the outer edge of the colloid tank cannot The solder joint support column has an impact, further reducing the breakage and damage rate of the solder joint support column. On the other hand, the filter chip is supported by the hollow glass support column, and the hollow structure of the hollow glass support column can effectively decompose the external force when the chip is affected by external force, and weaken the influence of the external force on the chip vibration. Therefore, the displacement amplitude of the chip in the direction of the external force is reduced, thereby reducing the influence on the torsion and displacement of the solder joint support column, and further improving the damage resistance of the solder joint support column.
附图说明Description of drawings
图1为本发明所述封装结构的结构示意图;1 is a schematic structural diagram of the packaging structure according to the present invention;
图2为本发明所述镂空玻璃支撑柱结构示意图;FIG. 2 is a schematic structural diagram of the hollow glass support column according to the present invention;
图3为本发明所述镂空玻璃支撑柱与滤波芯片之间的安装示意图;3 is a schematic diagram of the installation between the hollow glass support column and the filter chip according to the present invention;
(1,盖板;2,滤波芯片;3,IDT功能区域;4,导电胶;5,胶体槽;6,焊点支撑柱;7,支撑辅助片;8,连接盘;9,镂空玻璃支撑柱;10,焊球;11,金属导线层;12,基体;13,钝化层;14,导电胶柱;91,镂空侧壁;92,平面侧壁)。(1, cover plate; 2, filter chip; 3, IDT functional area; 4, conductive glue; 5, glue groove; 6, solder joint support column; 7, support auxiliary piece; 8, connection pad; 9, hollow glass support Column; 10, solder ball; 11, metal wire layer; 12, base body; 13, passivation layer; 14, conductive glue column; 91, hollow sidewall; 92, plane sidewall).
具体实施方式Detailed ways
以下结合附图对本发明的优选实施例进行说明,应当理解,此处所描述的优选实施例仅用于说明和解释本发明,并不用于限定本发明。The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, but not to limit the present invention.
本发明实施例提出的一种声表面滤波器封装结构,如图1所示,所述封装结构包括基体;所述基体内部设有两个胶体槽和金属导线层;所述两个胶体槽和金属导线层相通;所述金属导线层在所述基体内部延伸至基体底部外表面,并与所述基体底部的焊球电连接;所述基体底部外表面设有一层钝化层;所述两个胶体槽内灌入导电胶;所述导电胶与所述金属导线层接触相连;所述导电胶上表面高于所述基体的上表面;并且所述导电胶上粘结有焊点支柱;所述焊点支柱上设有芯片;所述芯片与所述基体和两个焊点支撑柱之间形成空隙,所述芯片的IDT功能区域设置于所述空隙内;所述基体上表面设有两个连接盘;所述连接盘上设有镂空玻璃支撑柱;所述芯片的两端内嵌于所述镂空玻璃支撑柱内;所述滤波芯片上方设有盖板;所述盖板与所述基体键合。其中,所述焊点支撑柱两侧分别设有支撑辅助片;所述支撑辅助片外侧设有导电胶柱;所述导电胶柱与所述导电胶高于所述基体的上表面的胶体部分黏连。A surface acoustic filter package structure proposed by an embodiment of the present invention, as shown in FIG. 1 , the package structure includes a base body; the base body is provided with two colloidal grooves and a metal wire layer; the two colloidal grooves and The metal wire layers communicate with each other; the metal wire layers extend to the outer surface of the bottom of the base inside the base body, and are electrically connected with the solder balls at the bottom of the base body; the outer surface of the base bottom is provided with a passivation layer; the two The conductive glue is poured into each glue tank; the conductive glue is in contact with the metal wire layer; the upper surface of the conductive glue is higher than the upper surface of the base body; and the conductive glue is bonded with a solder joint support; A chip is arranged on the solder joint pillar; a gap is formed between the chip, the base body and the two solder joint support columns, and the IDT functional area of the chip is arranged in the gap; the upper surface of the substrate is provided with a gap. Two connection plates; hollow glass support columns are arranged on the connection plates; both ends of the chip are embedded in the hollow glass support columns; a cover plate is arranged above the filter chip; Matrix bonding. Wherein, supporting auxiliary sheets are respectively provided on both sides of the solder joint support post; conductive glue posts are provided on the outer side of the supporting auxiliary sheets; the conductive glue posts and the conductive glue are higher than the glue part of the upper surface of the base body adhesion.
上述技术方案的工作原理及效果为:本实施例提出的一种声表面滤波器封装结构通过两个梯形结构相对设置的胶体槽、导电胶柱和支撑辅助片的结构和尺寸设置相结合能够在焊点支撑柱收到外力影响时,通过胶体槽对和导电胶柱、支撑辅助片对焊点支撑柱所述进行有效支撑,极大程度上提高焊点支撑柱的稳固性,有效防止焊点支撑柱发生破裂。同时,由于焊点支撑柱安装于所述胶体槽外面,能够有效缩短所述焊点支撑柱的长度提高其稳固性,并且,当出现外力作用时,所述胶体槽的外沿无法对所述焊点支撑柱产生影响,进一步降低了焊点支撑柱的折断破损率。另一方面,通过镂空玻璃支撑柱对滤波芯片进行支撑,并且,通过镂空玻璃支撑柱的镂空结构在芯片收到外力影响时,能够将外力进行有效的分解,弱化外力对芯片振动的影响力,从而减小芯片在外力作用向的位移幅度,进而降低对焊点支撑柱的扭动和位移影响,进一步提高焊点支撑柱的防破损性。The working principle and effect of the above technical solution are as follows: a surface acoustic filter package structure proposed in this embodiment can be used in the combination of the structure and size of the colloidal groove, the conductive glue column and the supporting auxiliary sheet, which are arranged opposite to the two trapezoidal structures. When the solder joint support column is affected by external force, the solder joint support column is effectively supported by the glue tank pair, the conductive glue column, and the supporting auxiliary sheet, which greatly improves the stability of the solder joint support column and effectively prevents the solder joint. The support column is broken. At the same time, since the solder joint support column is installed outside the colloid tank, the length of the solder joint support column can be effectively shortened to improve its stability, and when an external force acts, the outer edge of the colloid tank cannot The solder joint support column has an impact, further reducing the breakage and damage rate of the solder joint support column. On the other hand, the filter chip is supported by the hollow glass support column, and the hollow structure of the hollow glass support column can effectively decompose the external force when the chip is affected by external force, and weaken the influence of the external force on the chip vibration. Therefore, the displacement amplitude of the chip in the direction of the external force is reduced, thereby reducing the influence on the torsion and displacement of the solder joint support column, and further improving the damage resistance of the solder joint support column.
本发明的一个实施例,所述导电胶柱的高度要超过所述支撑辅助片安装高度的0.67倍位置。所述导电胶高于所述基体的上表面的胶体部分的高度满足如下关系:In an embodiment of the present invention, the height of the conductive glue column is 0.67 times higher than the installation height of the supporting auxiliary sheet. The height of the conductive adhesive higher than the colloidal portion of the upper surface of the substrate satisfies the following relationship:
0.075H<h<0.15H 0.075H < h < 0.15H
其中,h表示所述导电胶高于所述基体的上表面的胶体部分的高度;H表示焊点支撑柱的高度。Wherein, h represents the height of the conductive adhesive higher than the colloidal portion of the upper surface of the base; H represents the height of the solder joint support column.
上述技术方案的效果为:将导电胶设置为高于基体的上表面能够在于导电胶柱进行连通粘合提高导电胶柱稳固性的同时,降低胶体槽对焊点支撑柱的影响,同时,通过上述导电胶高于所述基体的上表面的胶体部分的高度的条件设置,能够有效控制导电胶溢出于基体的量,防止过多的导电胶产生多余电连接影响滤波芯片性能,同时,又能够保证导电胶具有足够溢出量保证与所述导电胶柱之间的粘合稳固性。另一方面,所述导电胶柱的高度的的设置能够有效提高导电胶柱与支撑辅助片之间的支撑力,有效提高支撑辅助片对所述焊点支撑柱的支撑力度,进而降低焊点支撑柱的破损率。The effect of the above technical solution is: setting the conductive glue higher than the upper surface of the base body can connect and bond the conductive glue column to improve the stability of the conductive glue column, and at the same time reduce the influence of the glue groove on the support column of the solder joint. The condition that the above-mentioned conductive adhesive is higher than the height of the colloid part on the upper surface of the base body can effectively control the amount of the conductive glue overflowing the base body, prevent excessive conductive glue from generating redundant electrical connections and affect the performance of the filter chip, and at the same time, it can also It is ensured that the conductive adhesive has enough overflow to ensure the adhesion stability with the conductive adhesive column. On the other hand, the setting of the height of the conductive glue column can effectively improve the supporting force between the conductive glue column and the supporting auxiliary sheet, effectively improve the supporting force of the supporting auxiliary sheet to the solder joint supporting column, and then reduce the solder joint The breakage rate of the support column.
本发明的一个实施例,所述支撑辅助片的安装底面低于导电胶高于所述基体的上表面的胶体部分的高度的最高面,所述支撑辅助片的长度满足如下条件:In one embodiment of the present invention, the mounting bottom surface of the supporting auxiliary sheet is lower than the highest surface of the conductive adhesive higher than the height of the glue portion on the upper surface of the base body, and the length of the supporting auxiliary sheet satisfies the following conditions:
其中,H p 表示支撑辅助片的长度;D表示焊点支撑柱的宽度;H表示焊点支撑柱的高度;h表示所述导电胶高于所述基体的上表面的胶体部分的高度;α和β表示高度调整系数,且,α取值范围为0.64-0.78;β取值范围为2.3-3.5。Wherein, H p represents the length of the supporting auxiliary piece; D represents the width of the solder joint support column; H represents the height of the solder joint support column; h represents the height of the colloid part of the conductive adhesive higher than the upper surface of the base body; α and β represent the height adjustment coefficient, and the value range of α is 0.64-0.78; the value range of β is 2.3-3.5.
上述技术方案的效果为:通过上述公式获取的支撑辅助片的长度能够根据焊点支撑柱的实际设计情况进行针对性设置。能够针对不同尺寸情况的焊点支撑柱均产生最大化的支撑稳固助力,同时,结合导电胶高于所述基体的上表面的胶体部分的高度对支撑辅助片的长度进行获取,充分考虑了当所述支撑辅助片的安装底面低于导电胶高于所述基体的上表面的胶体部分的高度的最高面的情况下,提高所述支撑辅助片对焊点支撑柱的稳固性同时,对所述溢出基体表面高度的导电胶进行范围钳制,防止导电胶过度外溢影响芯片性能。另一方面,通过上述公式获取的支撑辅助片的长度能够在保证对焊点支撑柱进行有效支撑的同时,与所述滤波芯片之间形成足够间隙,能够在导电胶固化膨胀对所述支撑辅助片产生作用力使其太高时,有效防止述支撑辅助片的上端接触滤波芯片,进而防止影响滤波芯片的性能。The effect of the above technical solution is that the length of the support auxiliary piece obtained by the above formula can be set in a targeted manner according to the actual design of the support column of the solder joint. It can maximize the support and stability of the support columns for solder joints of different sizes. At the same time, the length of the support auxiliary sheet is obtained in combination with the height of the conductive adhesive higher than the upper surface of the base. In the case where the mounting bottom surface of the supporting auxiliary sheet is lower than the highest surface of the conductive adhesive higher than the height of the glue part of the upper surface of the base body, the stability of the supporting auxiliary sheet to the solder joint support column is improved, and the The conductive adhesive that overflows the height of the substrate surface is clamped in the range to prevent excessive overflow of the conductive adhesive from affecting the performance of the chip. On the other hand, the length of the support auxiliary piece obtained by the above formula can ensure the effective support of the solder joint support column, and at the same time form a sufficient gap with the filter chip, so that the support can be assisted by the curing and expansion of the conductive adhesive. When the force generated by the sheet is too high, the upper end of the supporting auxiliary sheet is effectively prevented from contacting the filter chip, thereby preventing the performance of the filter chip from being affected.
本发明的一个实施例,所述胶体槽包括第一梯形结构和第二梯形结构;所述第一梯形结构的下底和第二梯形结构的下底对合相通;所述第一梯形结构的高和下底尺寸大于所述第二梯形结构的高和下底尺寸;所述第一梯形结构的上底与所述焊点支撑柱相连;所述第二梯形结构的上底与所述金属导线层连接。In an embodiment of the present invention, the colloid tank includes a first trapezoidal structure and a second trapezoidal structure; the lower bottom of the first trapezoidal structure and the lower bottom of the second trapezoidal structure are in contact with each other; The height and the lower base are larger than those of the second trapezoid structure; the upper base of the first trapezoid structure is connected to the solder joint support column; the upper base of the second trapezoid structure is connected to the metal Wire layer connections.
所述第一梯形结构的下底的底面和所述第二梯形结构的下底的底面均为正方形结构;所述第一梯形结构的下底底面的边长与所述第二梯形结构的下底底面的边长之比的范围为1:0.92-1:0.83;优选为1:0.85;所述第一梯形结构的高和所述第二梯形结构的高的比值为11:9。The bottom surface of the lower bottom of the first trapezoidal structure and the bottom surface of the lower bottom of the second trapezoidal structure are both square structures; The ratio of the side lengths of the bottom to the bottom is in the range of 1:0.92-1:0.83; preferably 1:0.85; the ratio of the height of the first trapezoid structure to the height of the second trapezoid structure is 11:9.
上述技术方案的工作原理及效果为:利用带有第一梯形结构和第二梯形结构的胶体槽的结构和尺寸比例设置,能够在所述焊点支撑柱遇到外力作用时,通过第一梯形结构和第二梯形结构向外倾斜的两个斜边向外分散作用力,将所述外力转移到基体中并进行弱化,防止所有应力均集中于焊点支撑柱而使其产生断裂。同时,由于第一梯形结构和第二梯形结构的设置方向不同,使其可以应对不同方向的外力,能够对不同方向的外力均产生足够的外力分散和弱化,另一方面,将第二梯形结构设置为小于第一梯形结构,能够是两个梯形结构之间存在一个水平方向的横截面,在下方出现外力时,在第二梯形结构进行外力分散弱化过程中,通过横截面的设置,将第一梯形结构对外力进行阻挡,进一步通过第一梯形结构弱化下方来力。The working principle and effect of the above technical solution are: by using the structure and size ratio setting of the colloid tank with the first trapezoid structure and the second trapezoid structure, when the solder joint support column encounters an external force, the first trapezoid can pass through the first trapezoid. The structure and the two inclined sides inclined outwardly of the second trapezoid structure disperse the force outward, transfer the external force into the matrix and weaken it, preventing all the stress from concentrating on the support column of the solder joint and causing it to break. At the same time, due to the different installation directions of the first trapezoid structure and the second trapezoid structure, they can cope with external forces in different directions, and can generate sufficient external force dispersion and weakening for external forces in different directions. Set to be smaller than the first trapezoid structure, there can be a horizontal cross section between the two trapezoid structures. When an external force occurs below, in the process of external force dispersion and weakening of the second trapezoid structure, the cross section is set. A trapezoidal structure blocks the external force, and further weakens the downward force through the first trapezoidal structure.
通过上述胶体槽的结构和尺寸比例配合设置能够最大程度将外力作用转移至基体,并最大成都对外力进行分散和弱化,进而降低外力对所述焊点支撑柱的影响,进而降低焊点支撑柱的破损率。Through the coordination of the structure and size ratio of the colloid tank, the external force can be transferred to the substrate to the greatest extent, and the external force can be dispersed and weakened to the greatest extent, thereby reducing the influence of the external force on the solder joint support column, thereby reducing the solder joint support column. breakage rate.
本发明的一个实施例,所述镂空玻璃支撑柱包括两个镂空侧壁和一个平面侧壁;所述两个镂空侧壁和一个平面侧壁依次相互垂直连接设置;所述两个镂空侧壁分别抵置于所述滤波芯片的前后侧壁上;所述平面侧壁抵置在所述滤波芯片的两端端壁上。其中,所述镂空侧壁与所述连接盘相连的一侧底边上设有直角梯形镂空结构;所述直角梯形镂空结构上设有倾斜梁;所述倾斜梁与所述镂空侧壁顶边之间设有一角设有矩形凸起的平行四边形镂空结构;其中,所述平行四边形镂空结构的设有矩形凸起的一角为靠近所述滤波芯片的侧壁中心位置的一角;所述镂空侧壁的顶边靠近所述滤波芯片的侧壁中心位置的一侧上设有直角梯形延展部;所述平行四边形镂空结构的一侧设有承载凸起,所述承载凸起用于承载所述滤波芯片。所述直角梯形镂空结构的长底边与所述平行四边形镂空结构的长边之比为1:2;所述直角梯形镂空结构的短底边与所述平行四边形镂空结构的长边之比为1:3;所述矩形凸起为正方形凸起,所述正方形凸起的边长的取值范围为:0.15h l ≤L≤0.18h l ,其中,h l 表示所述平行四边形镂空结构的高。In one embodiment of the present invention, the hollow glass support column includes two hollow side walls and one plane side wall; the two hollow side walls and one plane side wall are arranged in a vertical connection with each other in sequence; the two hollow side walls respectively abut on the front and rear sidewalls of the filter chip; the plane sidewalls abut on the end walls at both ends of the filter chip. Wherein, a right-angled trapezoidal hollow structure is provided on the bottom edge of the side where the hollow side wall is connected with the connecting plate; an inclined beam is arranged on the right-angle trapezoidal hollow structure; the inclined beam is connected to the top edge of the hollow side wall. There is a parallelogram hollow structure with a rectangular protrusion at one corner; wherein, the corner of the parallelogram hollow structure with the rectangular protrusion is a corner close to the center of the side wall of the filter chip; the hollow side A right-angled trapezoidal extension is provided on the side of the top edge of the wall close to the center of the sidewall of the filter chip; a bearing protrusion is provided on one side of the parallelogram hollow structure, and the bearing protrusion is used to carry the filter chip chip. The ratio of the long base of the right-angled trapezoidal hollow structure to the long side of the parallelogram hollow structure is 1:2; the ratio of the short base of the right-angled trapezoidal hollow structure to the long side of the parallelogram hollow structure is 1:3; the rectangular protrusion is a square protrusion, and the value range of the side length of the square protrusion is: 0.15 h l ≤ L ≤ 0.18 h l , where h l represents the length of the parallelogram hollow structure. high.
上述技术方案的工作原理及效果为:通过镂空玻璃支撑柱的平行四边形镂空结构和直角梯形镂空结构的设置,在滤波芯片收外力影响较大的情况下,能够对所述滤波芯片产生足够支撑力和固定力的同时,通过平行四边形镂空结构和直角梯形镂空结构将所述外力消散于盖板和基体上,降低滤波芯片的受力程度,进而降低外力对焊点支撑柱的影响。另一方面,通过倾斜梁的设置,能够在玻璃支撑柱设置有两个镂空结构,并且玻璃支撑柱制作较薄的情况下,有效提高镂空玻璃支撑柱的强度,有效防止玻璃支撑柱自身断裂。同时,由于平行四边形镂空结构在成手上方来的外力时,由于平行四边形镂空结构的锐角结构,容易是该锐角端点出集中多大应力,易使玻璃支撑柱碎裂,因此,通过矩形凸起的设置分散和弱化该顶点成手的外力,进而提高镂空玻璃支撑柱的强度,有效防止玻璃支撑柱自身断裂。The working principle and effect of the above technical solution are: through the arrangement of the parallelogram hollow structure and the right-angled trapezoidal hollow structure of the hollow glass support column, when the filter chip is greatly affected by the external force, sufficient support force can be generated for the filter chip. At the same time as the fixing force, the external force is dissipated on the cover plate and the base body through the parallelogram hollow structure and the right-angle trapezoidal hollow structure, which reduces the force degree of the filter chip, thereby reducing the influence of the external force on the solder joint support column. On the other hand, through the arrangement of the inclined beam, the strength of the hollow glass support column can be effectively improved when the glass support column is provided with two hollow structures and the glass support column is made thin, and the glass support column itself can be effectively prevented from breaking. At the same time, due to the external force from the parallelogram hollow structure above the hand, due to the acute angle structure of the parallelogram hollow structure, it is easy to concentrate a large amount of stress on the acute angle end point, which is easy to break the glass support column. The external force that disperses and weakens the apex into a hand is set, thereby improving the strength of the hollow glass support column and effectively preventing the glass support column from breaking itself.
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention. Thus, provided that these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109660229A (en) * | 2018-12-20 | 2019-04-19 | 杰群电子科技(东莞)有限公司 | Surface acoustic wave filter processing technology, surface acoustic wave filter and electronic product |
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CN102496759B (en) * | 2011-11-29 | 2014-03-12 | 华为技术有限公司 | Planar waveguide, waveguide filter and antenna |
CN104124327B (en) * | 2013-04-26 | 2017-06-20 | 展晶科技(深圳)有限公司 | Package structure for LED |
CN105186070B (en) * | 2015-09-18 | 2017-11-21 | 无锡泓瑞航天科技有限公司 | A kind of Cryo Refrigerator multichannel super conductive filter supporting construction |
US10333493B2 (en) * | 2016-08-25 | 2019-06-25 | General Electric Company | Embedded RF filter package structure and method of manufacturing thereof |
CN110943710A (en) * | 2019-11-18 | 2020-03-31 | 王之奇 | Filter chip packaging structure and wafer level packaging method thereof |
CN111555732B (en) * | 2020-05-12 | 2022-07-12 | 中国电子科技集团公司第二十六研究所 | Thin film bulk acoustic wave device packaging structure and packaging method thereof |
CN111769812B (en) * | 2020-05-26 | 2024-05-28 | 甬矽电子(宁波)股份有限公司 | Surface acoustic wave filter chip packaging structure and packaging method |
CN213661584U (en) * | 2020-12-07 | 2021-07-09 | 苏州晶方半导体科技股份有限公司 | Surface acoustic wave filter chip packaging structure |
CN113316072B (en) * | 2021-05-27 | 2022-06-17 | 宁波华彰企业管理合伙企业(有限合伙) | Piezoelectric acoustic transducer with filtering function and manufacturing method thereof |
CN113675102A (en) * | 2021-10-22 | 2021-11-19 | 深圳新声半导体有限公司 | Method and chip particle for chip packaging |
-
2021
- 2021-12-16 CN CN202111536132.2A patent/CN113938109B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109660229A (en) * | 2018-12-20 | 2019-04-19 | 杰群电子科技(东莞)有限公司 | Surface acoustic wave filter processing technology, surface acoustic wave filter and electronic product |
CN112367061A (en) * | 2020-09-16 | 2021-02-12 | 厦门云天半导体科技有限公司 | Glass cover plate-based surface acoustic wave filter packaging method and structure |
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