CN113903644B - Baffle for ion beam etching cavity - Google Patents
Baffle for ion beam etching cavity Download PDFInfo
- Publication number
- CN113903644B CN113903644B CN202010572278.1A CN202010572278A CN113903644B CN 113903644 B CN113903644 B CN 113903644B CN 202010572278 A CN202010572278 A CN 202010572278A CN 113903644 B CN113903644 B CN 113903644B
- Authority
- CN
- China
- Prior art keywords
- baffle
- ion beam
- beam etching
- segment
- discharge cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005530 etching Methods 0.000 title claims abstract description 38
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 19
- 239000010453 quartz Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 7
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Sampling And Sample Adjustment (AREA)
- Chemical Or Physical Treatment Of Fibers (AREA)
Abstract
The invention relates to a baffle for an ion beam etching cavity, which comprises a discharge cavity, wherein a gird component is arranged at the end part of the discharge cavity, a baffle is arranged in the discharge cavity and is arranged at one end of the discharge cavity, which is close to the gird component, the baffle comprises a ring segment and a baffle segment, the ring segment is clamped in the discharge cavity, and a plurality of small holes are distributed on the surface of the baffle segment. The invention can effectively reduce the plasma density of the edge or the inner ring, thereby improving the etching uniformity.
Description
Technical Field
The invention belongs to the field of integrated circuit manufacturing, and particularly relates to a baffle for an ion beam etching cavity.
Background
An Ion Beam Etching (IBE) chamber is a device that bombards a surface of a material with an ion beam of a certain energy to sputter the surface of the material, thereby achieving an etching effect. The main components of the IBE chamber are an ion source, a neutralizer, a carrier and a rotating motor. The ion source is a key component of IBE etching and comprises a quartz cavity, a Radio Frequency (RF) power supply, a radio frequency matcher, a radio frequency coil and a 2-3 layer grid (grid). In the etching process, reactive gases Ar, O2 and the like enter a quartz cavity discharge chamber, and plasma is generated through high-frequency wave ionization initiated by an RF coil. Ions are led out through a grid mesh and focused into a beam, then electrons emitted by a neutralizer are neutralized into an ion beam which is neutral and has certain energy, and the surface of a wafer on a carrier is bombarded to realize etching.
Etch uniformity is an important parameter that characterizes the uniformity of the etch pattern across the wafer surface, and is typically calculated from the NU or sigma of the etch rate at each point in the plane. For IBE chambers, the distribution of the plasma and the configuration of the etch chamber, particularly the ion source grid components, can have a significant impact on etch uniformity. The ion source Grid assembly is typically comprised of a screen Grid, an acceleration Grid, and a deceleration Grid (some without a deceleration Grid). The screen grid can absorb discharge electrons as an anode in the discharge chamber to form a discharge loop, so that the focusing effect is achieved, positive ions can be extracted from the accelerating grid, and the ion distribution can be effectively adjusted by the decelerating grid. The plasma density is continuously reduced in the radial direction when the reaction gas is ionized in the quartz cavity. To ensure etch uniformity, the mesh size on the screen is gradually increased in the radial direction to achieve better uniformity.
However, in practical use, the etch uniformity achievable under different process conditions, such as ion beam voltage (BMV), varies significantly with a fixed grid mesh. Chinese patent CN202297785U discloses an exhaust pipe structure for improving uniformity of a process chamber of an etching apparatus. Chinese patent CN101465286 discloses an etching method for adjusting the uniformity of the etching rate on the surface of a wafer, which improves the edge etching rate by adjusting the supply or supply parameters of the etching reaction gas, thereby improving the etching uniformity. The method is a directional adjusting method, the adjusting range and the direction of the center and the edge of the wafer are fixed, and the flexibility is poor.
Disclosure of Invention
The invention aims to solve the technical problem of providing a baffle for an ion beam etching cavity aiming at the defects of the background technology, and can effectively reduce the density of plasma at the edge or the inner ring so as to improve the etching uniformity.
The invention adopts the following technical scheme for solving the technical problems:
a baffle for an ion beam etching cavity comprises a discharge cavity, wherein a gird component is arranged at the end part of the discharge cavity, a baffle is arranged in the discharge cavity and is arranged at one end, close to the gird component, in the discharge cavity, the baffle comprises a ring segment and a baffle segment, the ring segment is clamped in the discharge cavity, and a plurality of small holes are distributed on the surface of the baffle segment.
Further, the aperture of the small hole gradually increases or decreases from the center of the baffle segment to the outside.
Further, the pore diameter of the small pores is between 1 and 5 mm.
Further, the baffle segment is divided into an inner ring and an outer ring, and the small holes are distributed on the inner ring.
Further, the thickness of the baffle is 3-6 mm.
Further, the length of the ring segments is between 8-15 mm.
Furthermore, the baffle plate is made of quartz or ceramic.
Compared with the prior art, the technical scheme provided by the invention has the following technical effects:
In the etching process, the size of the small holes at the edge of the Grid component of the ion source is gradually increased, and the difference of the etching uniformity which can be achieved under different process conditions (BMV) is larger. A baffle plate is added in the discharge cavity 1, so that the plasma density of the edge or the inner ring can be effectively reduced, and the etching uniformity is improved. After the baffle is installed, the ER of the outer ring is obviously reduced, and the uniformity is adjustable.
Drawings
FIG. 1 is a schematic overall structure of a first embodiment;
FIG. 2 is a cross-sectional view of a baffle plate and discharge chamber in accordance with one embodiment;
FIG. 3 is a schematic view of a baffle in the first embodiment;
fig. 4 is a schematic structural diagram of a baffle in the second embodiment.
In the figure, 1, a discharge cavity; 2. a baffle; 21. a ring segment; 22. a blocking segment; 3. and a grid component.
Detailed Description
The technical scheme of the invention is further described in detail below with reference to the accompanying drawings:
In a first embodiment, as shown in fig. 1,2 and 3, a blocking piece for an ion beam etching chamber includes a discharge chamber, a gird component is disposed at an end of the discharge chamber, a blocking piece is installed in the discharge chamber, the blocking piece is disposed at one end of the discharge chamber close to the gird component, and a distance between the blocking piece 2 and the grid component 3 is 0-20cm. The baffle plate comprises a ring section and a baffle section, the ring section is clamped in the discharge cavity, and a plurality of small holes are distributed on the surface of the baffle section.
The aperture of the small hole gradually increases or decreases outwards from the center of the baffle segment. The aperture of the small hole is between 1 and 5 mm. The thickness of the baffle is 3-6 mm. The length of the ring segments is between 8-15 mm. The baffle is made of quartz or ceramic.
In a second embodiment, as shown in fig. 4, the blocking section is divided into an inner ring and an outer ring, and the small holes are distributed on the inner ring.
When ionized gas ionizes in the discharge cavity 1 and ion beams are extracted through the Grid component 3 for etching, the small holes in the baffle plate 2 can block plasmas in the discharge cavity 1, so that the edge plasma density is reduced, the etching rate of the outer ring is reduced, and the overall etching uniformity is improved.
In order to flexibly adjust the edge plasma density, the diameters of the small holes in the baffle plate 2 can be designed to be 1-5 mm in different specifications, and also can be designed to be a ring without small hole distribution, the diameter of the outer ring of the ring is 150-200cm, and the diameter of the inner ring is 20-120cm.
To achieve etch uniformity adjustment at low BMV, the baffle may be designed with only the inner ring perforated area. At this time, the plasma in the inner ring region of the wafer is blocked, the plasma density is reduced, and the inner ring etching rate is reduced, so that the overall etching uniformity is improved. The inner ring baffle plate is also divided into a ring section and a baffle section, the ring section is used for fixing, and the baffle section is connected and fixed on the ring section by 2-6 contact rods and is used for blocking plasma and adjusting uniformity.
For the convenience of process and processing, the thickness of the baffle plate 21 should be 3 mm-6 mm, and the length of the ring section 22 should be 8 mm-15 mm. The material of the baffle plate 2 should preferably be quartz or ceramic.
In the etching process, the size of the small holes at the edge of the Grid component 3 of the ion source is gradually increased, and the difference of the etching uniformity which can be achieved under different process conditions (BMV) is larger. The baffle plate 2 is added in the discharge cavity 1, so that the plasma density of the edge or the inner ring can be effectively reduced, and the etching uniformity is improved.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereto, and any modification made on the basis of the technical scheme according to the technical idea of the present invention falls within the protection scope of the present invention. The embodiments of the present invention have been described in detail, but the present invention is not limited to the above embodiments, and various changes can be made without departing from the spirit of the present invention within the knowledge of those skilled in the art.
Claims (7)
1. A baffle for an ion beam etching chamber, comprising: the electric discharge device comprises a discharge cavity, wherein a grid component is arranged at the end part of the discharge cavity, a baffle is arranged in the discharge cavity, the baffle is arranged at one end of the discharge cavity close to the grid component, the distance between the baffle and the grid component is 0-20cm, the baffle comprises a ring segment and a baffle segment, the ring segment is clamped in the discharge cavity, and a plurality of small holes are distributed on the surface of the baffle segment; the shield is used to reduce the edge or inner ring plasma density.
2. A baffle for an ion beam etching chamber as recited in claim 1, wherein: the aperture of the small hole gradually increases or decreases outwards from the center of the baffle segment.
3. A baffle for an ion beam etching chamber as recited in claim 1, wherein: the aperture of the small hole is between 1 and 5 mm.
4. A baffle for an ion beam etching chamber as recited in claim 1, wherein: the baffle segments are divided into an inner ring and an outer ring, and the small holes are distributed on the inner ring.
5. A baffle for an ion beam etching chamber as recited in claim 1, wherein: the thickness of the baffle is 3-6 mm.
6.A baffle for an ion beam etching chamber as recited in claim 1, wherein: the length of the ring segments is between 8-15 mm.
7. A baffle for an ion beam etching chamber as recited in claim 1, wherein: the baffle is made of quartz or ceramic.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010572278.1A CN113903644B (en) | 2020-06-22 | 2020-06-22 | Baffle for ion beam etching cavity |
| PCT/CN2021/100619 WO2021259133A1 (en) | 2020-06-22 | 2021-06-17 | Stopper for ion beam etching chamber |
| TW110122710A TWI778676B (en) | 2020-06-22 | 2021-06-22 | Blocker for ion beam etching chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010572278.1A CN113903644B (en) | 2020-06-22 | 2020-06-22 | Baffle for ion beam etching cavity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113903644A CN113903644A (en) | 2022-01-07 |
| CN113903644B true CN113903644B (en) | 2024-10-15 |
Family
ID=79186380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010572278.1A Active CN113903644B (en) | 2020-06-22 | 2020-06-22 | Baffle for ion beam etching cavity |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN113903644B (en) |
| TW (1) | TWI778676B (en) |
| WO (1) | WO2021259133A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116798844B (en) * | 2023-08-29 | 2023-11-10 | 江苏鹏举半导体设备技术有限公司 | Ion generating device and particle removing method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490794A (en) * | 2006-07-20 | 2009-07-22 | 阿维扎技术有限公司 | Plasma sources |
| CN106683966A (en) * | 2016-08-31 | 2017-05-17 | 北京埃德万斯离子束技术研究所股份有限公司 | Large-beam diameter ion source and screen grid |
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| JP3343819B2 (en) * | 1991-08-23 | 2002-11-11 | 日本電信電話株式会社 | Ion etching method and apparatus |
| JP3833173B2 (en) * | 2002-12-19 | 2006-10-11 | 東京エレクトロン株式会社 | Vacuum processing apparatus and exhaust ring |
| KR20070043383A (en) * | 2005-10-21 | 2007-04-25 | 삼성전자주식회사 | Plasma etch stripper comprising a gas distribution plate having a plurality of gas blocks |
| CN101453821B (en) * | 2007-12-04 | 2011-12-21 | 北京卫星环境工程研究所 | Wide range plasma density regulating apparatus |
| KR101091309B1 (en) * | 2009-08-18 | 2011-12-07 | 주식회사 디엠에스 | Plasma Etching Equipment |
| KR101080604B1 (en) * | 2010-02-09 | 2011-11-04 | 성균관대학교산학협력단 | atomic layer etching apparatus and etching method using the same |
| JP2014209406A (en) * | 2011-07-20 | 2014-11-06 | キヤノンアネルバ株式会社 | Ion beam generating device, and ion beam plasma processing apparatus |
| US10475626B2 (en) * | 2015-03-17 | 2019-11-12 | Applied Materials, Inc. | Ion-ion plasma atomic layer etch process and reactor |
| KR102487342B1 (en) * | 2016-06-14 | 2023-01-13 | 삼성전자주식회사 | Electrostatic chuck and a plasma apparatus for processing substrates having the same |
| CN108538694B (en) * | 2017-03-02 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Chamber and plasma processing device |
| CN107516625A (en) * | 2017-07-13 | 2017-12-26 | 江苏鲁汶仪器有限公司 | A kind of spray head of plasma etching system |
| US10815570B2 (en) * | 2017-11-13 | 2020-10-27 | Denton Vacuum, L.L.C. | Linearized energetic radio-frequency plasma ion source |
| CN108428611B (en) * | 2017-11-22 | 2020-12-11 | 中国电子科技集团公司第五十五研究所 | Method for adjusting uniformity of ion milling |
| KR102487930B1 (en) * | 2018-07-23 | 2023-01-12 | 삼성전자주식회사 | Substrate support apparatus and plasma processing apparatus having the same |
| CN108901114B (en) * | 2018-07-27 | 2020-07-10 | 上海工程技术大学 | A device for generating plasma jets |
| GB2582242A (en) * | 2018-11-30 | 2020-09-23 | Oxford Instruments Nanotechnology Tools Ltd | Charged particle beam source, surface processing apparatus and surface processing method |
| CN209676564U (en) * | 2018-12-28 | 2019-11-22 | 核工业西南物理研究院 | A radio frequency inductively coupled linear ion source |
| CN110223903B (en) * | 2019-04-22 | 2021-07-02 | 江苏鲁汶仪器有限公司 | Ion source baffle plate with uniform symmetrical arrangement and synchronous opening and closing |
| CN110047724B (en) * | 2019-04-22 | 2021-07-27 | 江苏鲁汶仪器有限公司 | Double-layer baffle for ion beam etching |
| CN110571120B (en) * | 2019-09-17 | 2022-09-02 | 江苏鲁汶仪器有限公司 | Ion source etching chamber with cleaning equipment and ion beam cleaning method |
| CN110571115B (en) * | 2019-09-17 | 2022-04-15 | 江苏鲁汶仪器有限公司 | Ion beam etching machine with movable multi-ion source configuration |
-
2020
- 2020-06-22 CN CN202010572278.1A patent/CN113903644B/en active Active
-
2021
- 2021-06-17 WO PCT/CN2021/100619 patent/WO2021259133A1/en active Application Filing
- 2021-06-22 TW TW110122710A patent/TWI778676B/en active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490794A (en) * | 2006-07-20 | 2009-07-22 | 阿维扎技术有限公司 | Plasma sources |
| CN106683966A (en) * | 2016-08-31 | 2017-05-17 | 北京埃德万斯离子束技术研究所股份有限公司 | Large-beam diameter ion source and screen grid |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202201471A (en) | 2022-01-01 |
| CN113903644A (en) | 2022-01-07 |
| TWI778676B (en) | 2022-09-21 |
| WO2021259133A1 (en) | 2021-12-30 |
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Country or region after: China Address after: No. 8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province, 221000 Applicant after: Jiangsu Luwen Instrument Co.,Ltd. Address before: 221300 No.8, Liaohe West Road, Pizhou Economic Development Zone, Xuzhou City, Jiangsu Province Applicant before: JIANGSU LEUVEN INSTRUMMENTS Co.,Ltd. Country or region before: China |
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