CN113871366A - A multi-base island silicon carbide power switch tube for chip packaging - Google Patents
A multi-base island silicon carbide power switch tube for chip packaging Download PDFInfo
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- CN113871366A CN113871366A CN202111170210.1A CN202111170210A CN113871366A CN 113871366 A CN113871366 A CN 113871366A CN 202111170210 A CN202111170210 A CN 202111170210A CN 113871366 A CN113871366 A CN 113871366A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
Abstract
本发明涉及开关管技术领域，且公开了一种芯片封装用多基岛碳化硅功率开关管，包括封装外壳，所述封装外壳的内部设置有第一基岛、第二基岛、第三基岛和第四基岛，所述第一基岛的正面设置有碳化硅芯片，所述第二基岛的正面设置有硅基MOS芯片，所述第一基岛、第二基岛、第三基岛和第四基岛的侧表面均设置有外接引脚。该芯片封装用多基岛碳化硅功率开关管，通过将碳化硅芯片安装在第一基岛的正面，从而可以将其安装在尺寸较小的DFN5060封装内部，进而实现将产品进行小型化。The invention relates to the technical field of switch tubes, and discloses a multi-base island silicon carbide power switch tube for chip packaging. an island and a fourth base island, the front side of the first base island is provided with a silicon carbide chip, the front side of the second base island is provided with a silicon-based MOS chip, the first base island, the second base island, the third base island The side surfaces of the base island and the fourth base island are provided with external pins. The multi-base-island silicon carbide power switch used in the chip package can be installed inside the smaller DFN5060 package by installing the silicon carbide chip on the front side of the first base island, thereby realizing the miniaturization of the product.
Description
Technical Field
The invention relates to the technical field of switch tubes, in particular to a multi-base island silicon carbide power switch tube for chip packaging.
Background
The power switch tube can bear larger current, has smaller leakage current, has better saturated conduction and cut-off characteristics under certain conditions, does not consider the amplification performance too much, and the control electrode of the power switch tube is related to the magnitude or direction of the base current through a collector and an emitter, and specifically is an NPN or PNP tube in the direction, and the field effect tube is generally used as an electronic switch and is related to the control and polarity.
Because the size of the DFN5060 package is small, and the small size of the DFN5060 package meets the development trend of miniaturization of power supply products, but the existing high-voltage silicon MOS (particularly MOS with a withstand voltage of more than 600V and an internal resistance of less than 400 mohm) has a large wafer area and cannot be put into the package, a multi-base island silicon carbide power switch tube for chip packaging needs to be provided to solve the problems.
Disclosure of Invention
Technical problem to be solved
Aiming at the defects of the prior art, the invention provides a multi-base-island silicon carbide power switch tube for chip packaging, which has the advantages that a silicon carbide chip is installed on a base island, and then the silicon carbide chip can be packaged into a DFN5060 package with a smaller size, so that the power switch tube can meet the development trend of miniaturization of power supply products, and the like, and the problem that the existing high-voltage silicon MOS has a larger wafer area and cannot be placed into the package is solved.
(II) technical scheme
In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a many base islands carborundum power switch tube for chip package, includes the encapsulation shell, the inside of encapsulation shell is provided with first base island, second base island, third base island and fourth base island, the front of first base island is provided with silicon carbide chip, the front of second base island is provided with silicon-based MOS chip, the side surface of first base island, second base island, third base island and fourth base island all is provided with external pin.
Preferably, the first base island is located on the right side inside the package housing, the second base island, the third base island and the fourth base island are all located on the left side inside the package housing, and the first base island is located on the right side of the second base island.
Preferably, four external pins are arranged on the right side of the first base island, two external pins are arranged on the left side of the second base island, one external pin is arranged on each of the left sides of the third base island and the fourth base island, and the base islands can be communicated with external electronic elements through the external pins.
Preferably, the silicon carbide chip is connected with the second base island and the fourth base island through connecting wires, the silicon-based MOS chip is connected with the third base island and the fourth base island through connecting wires, the connecting wires are made of copper wires or aluminum wires, the first base island, the second base island, the third base island and the fourth base island are made of conductive metal materials, and then the base islands can be communicated with the silicon carbide chip and the silicon-based MOS chip through the connecting wires.
Preferably, one end of the external pin is located outside the package housing, and the external pin is fixed to the inside of the package housing, so that the connection position of the external pin can be sealed.
Compared with the prior art, the invention provides a multi-base-island silicon carbide power switch tube for chip packaging, which has the following beneficial effects:
1. this many baselands carborundum power switch tube for chip package through install the carborundum chip in the front of first baseland to can install it inside the less DFN5060 encapsulation of size, and then realize carrying out the miniaturization with the product.
2. This many base islands carborundum power switch tube for chip package through mutually supporting between first base island, second base island, third base island, fourth base island, carborundum chip and the silicon-based MOS chip, makes the device can work on higher operating frequency through the carborundum chip, and carborundum can bear higher temperature to make the device more stable when the operation.
3. This many basements island carborundum power switch tube is used in chip package, through epoxy's effect, put into the mould with the chip of installing and basements earlier, then soften epoxy and pour into inside the mould to can cover basements and chips through epoxy, then harden epoxy, form the encapsulation shell, thereby can protect chip and connecting wire, prevent that steam from getting into and causing the short-circuit phenomenon.
Drawings
FIG. 1 is a sectional view of a top view of the present invention;
FIG. 2 is a sectional view of the bottom view of the present invention;
FIG. 3 is a schematic top view of the present invention;
fig. 4 is a schematic view of another connection state structure of the connection wire of the present invention.
Wherein: 1. a package housing; 2. a connecting wire; 3. a first base island; 4. a second base island; 5. a third base island; 6. a fourth base island; 7. a silicon carbide chip; 8. a silicon-based MOS chip; 9. and connecting with a pin externally.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-4, a multi-base-island silicon carbide power switch tube for chip packaging includes a package housing 1, the package housing 1 is made of epoxy resin, a first base island 3, a second base island 4, a third base island 5 and a fourth base island 6 are disposed inside the package housing 1, the first base island 3 is located on the right side inside the package housing 1, the second base island 4, the third base island 5 and the fourth base island 6 are all located on the left side inside the package housing 1, the first base island 3 is located on the right side of the second base island 4, the silicon carbide chip 7 is disposed on the front side of the first base island 3, the silicon-based MOS chip 8 is disposed on the front side of the second base island 4, external pins 9 are disposed on the side surfaces of the first base island 3, the second base island 4, the third base island 5 and the fourth base island 6, four external pins 9 are disposed on the right side of the first base island 3, two external pins 9 are disposed on the left side of the second base island 4, an external pin 9 is arranged on the left side of each of the third and fourth base islands 5 and 6, one end of the external pin 9 is located outside the package housing 1, the external pin 9 is fixed with the inside of the package housing 1, an external electronic component can be connected with the plurality of base islands inside the device through the external pin 9, the silicon carbide chip 7 is connected with the second and fourth base islands 4 and 6 through the connecting wire 2, the silicon-based MOS chip 8 is connected with the third and fourth base islands 5 and 6 through the connecting wire 2, the connecting wire 2 is made of copper wire or aluminum wire, the number of the connecting wire 2 is multiple, and can be adjusted according to the conduction current, the connection mode of another connecting wire 2 is shown in fig. 4, the connection mode of the connecting wire 2 and each base island on fig. 4 is a connection diagram adjusted according to the conduction current, and the connection mode of the connecting wire 2 is different from the connection mode in fig. 1, the silicon carbide chip 7 and the silicon-based MOS chip 8 are respectively provided with four connecting wires 2, and the first base island 3, the second base island 4, the third base island 5 and the fourth base island 6 are made of conductive metal materials.
The fourth base island 6 is positioned below the second base island 4, the silicon carbide chip 7 comprises a gate pole, a collector and a source, the silicon-based MOS chip 8 also comprises a gate pole, a collector and a source, the collector of the silicon carbide chip 7 is welded on the front surface of the first base island 3, the source of the silicon carbide chip 7 is connected with the front surface of the second base island 4 through a connecting wire 2, the gate pole of the silicon carbide chip 7 is connected with the front surface of the fourth base island 6 through the connecting wire 2, the collector of the silicon-based MOS chip 8 is welded on the front surface of the second base island 4, the source of the silicon-based MOS chip 8 is connected with the front surface of the fourth base island 6 through the connecting wire 2, the silicon-based MOS chip 8 is connected with the front surface of the third base island 5 through the connecting wire 2, the silicon carbide power switch tube has the function similar to the silicon-based MOS, and voltage driving is carried out on the device, so that a voltage driving signal can be input from the third base island 5, the conduction current flows in from the first base island 3 and flows out from the fourth base island 6, or flows in from the fourth base island 6 and flows out from the first base island 3, the driving signal of the third base island 5 is used for controlling whether to open or close the path for the current to flow in the high-voltage silicon MOS, because the size of the DFN5060 package is small, the wafer area of the existing high-voltage silicon MOS is large, and the high-voltage silicon MOS cannot be put in the package, and the silicon carbide chip 7 is arranged on the front surface of the first base island 3, and the silicon carbide power switch tube can be assembled in the package of the DFN5060 through the arrangement mode, and the device is realized in the package of the DFN5060, so that the silicon carbide power switch tube can select better electronic components during the miniaturization design of a power supply, can work at a higher operation frequency compared with the traditional silicon-based power switch tube, and can bear higher junction temperature, and the work efficiency is improved.
When in use, the silicon carbide chip 7 is installed on the front surface of the first base island 3, then the silicon-based MOS chip 8 is installed on the front surface of the second base island 4, the silicon carbide chip 7 is connected with the second base island 4 and the fourth base island 6 through the connecting wires 2, meanwhile, the silicon-based MOS chip 8 is connected with the third base island 5 and the fourth base island 6 through the connecting wires 2, eight external pins 9 are respectively connected with the first base island 3, the second base island 4, the third base island 5 and the fourth base island 6, when the installation and connection between the chip and the base islands are completed, the chip and the base islands are placed in the mold, then the epoxy resin is softened and injected into the mold, the first base island 3, the second base island 4, the third base island 5, the fourth base island 6, the silicon carbide chip 7, the silicon-based MOS chip 8 and the connecting wires 2 can be covered and wrapped up through the epoxy resin, and are cooled and molded, can form encapsulation shell 1, from then realizing fixing first base island 3, second base island 4, third base island 5 and fourth base island 6 in encapsulation shell 1's inside to seal external pin 9 department, and can protect silicon carbide chip 7, silicon-based MOS chip 8 and connecting wire 2, prevent that external moisture from getting into the inside of the device and causing present short circuit phenomenon.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111170210.1A CN113871366A (en) | 2021-10-08 | 2021-10-08 | A multi-base island silicon carbide power switch tube for chip packaging |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111170210.1A CN113871366A (en) | 2021-10-08 | 2021-10-08 | A multi-base island silicon carbide power switch tube for chip packaging |
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| TW202129866A (en) * | 2019-10-21 | 2021-08-01 | 日商瑞薩電子股份有限公司 | Semiconductor device |
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| CN113410217A (en) * | 2021-07-23 | 2021-09-17 | 苏州华太电子技术有限公司 | Cascade SiC power device sealed by double tube cores |
| CN216213419U (en) * | 2021-10-08 | 2022-04-05 | 彭钰 | A multi-base island silicon carbide power switch tube for chip packaging |
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2021
- 2021-10-08 CN CN202111170210.1A patent/CN113871366A/en active Pending
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| US4460417A (en) * | 1981-10-27 | 1984-07-17 | Nippon Telegraph & Telephone Public Corporation | Method of manufacturing insulating film and electric device utilizing the same |
| TW201639278A (en) * | 2015-04-21 | 2016-11-01 | 台達電子工業股份有限公司 | Power switch circuit |
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