CN113851442A - High-power thin patch type bridge rectifier - Google Patents
High-power thin patch type bridge rectifier Download PDFInfo
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- CN113851442A CN113851442A CN202010599497.9A CN202010599497A CN113851442A CN 113851442 A CN113851442 A CN 113851442A CN 202010599497 A CN202010599497 A CN 202010599497A CN 113851442 A CN113851442 A CN 113851442A
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- diode chip
- metal lead
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- lead frame
- shaped metal
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
- 238000003466 welding Methods 0.000 claims abstract description 73
- 239000004593 Epoxy Substances 0.000 claims description 25
- 238000004806 packaging method and process Methods 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 4
- 238000002161 passivation Methods 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 claims 2
- 238000005476 soldering Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for individual devices of subclass H10D
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a high-power thin patch type bridge rectifier, which comprises: the LED chip comprises a first diode chip, a second diode chip, a metal lead frame and an L-shaped metal lead, wherein a plurality of first convex columns are distributed on the surface of a first welding strip of the metal lead frame at intervals, and the first welding strip and the first convex columns are connected with anode ends of the first diode chip and the second diode chip through first soldering lug layers; the surfaces of second welding strips of the L-shaped metal leads are distributed with a plurality of second convex columns at intervals, and the second welding strips and the second convex columns are connected with the negative ends of the first diode chip and the second diode chip through second welding sheet layers; the first welding strip of the metal lead frame and the second welding strip of the L-shaped metal lead are respectively provided with a protruding part protruding outwards in the areas of the first diode chip and the second diode chip. The invention avoids cold joint, thereby improving the reliability of the device, effectively avoiding water vapor from entering the device, and improving the weather resistance and the overall strength.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a high-power thin patch type bridge rectifier.
Background
The rectifier bridge stack is a rectifier device consisting of diode chips. The bridge stack comprises a half bridge, a full bridge and a three-phase bridge, and also comprises a positive half bridge and a negative half bridge, and the bridge stack rectifies alternating current by utilizing the unidirectional conductive characteristic of a diode.
Under the promotion of the rapid development of the electronic information industry in China, the semiconductor rectifying device is also rapidly developed. With the progress of science and technology, electronic products are also continuously developed, and the electronic products are developed to be light, small and thin. The surface mounting technology of electronic components becomes a development trend at home and abroad, but due to the limitation of certain technologies, high-power components are basically packaged in a plug-in mode. How to design a patch type rectifying device and further improve the design is the direction of efforts of those skilled in the art.
Disclosure of Invention
The invention aims to provide a high-power thin chip-mounted bridge rectifier, which effectively improves the position offset of a diode chip and a metal lead in the welding process and avoids insufficient welding, thereby improving the reliability of a device, effectively avoiding water vapor from entering the device and improving the weather resistance and the overall strength.
In order to achieve the purpose, the invention adopts the technical scheme that: a high-power thin patch bridge rectifier comprises: the LED chip comprises a first diode chip, a second diode chip, a metal lead frame and an L-shaped metal lead, wherein the metal lead frame further comprises a first welding strip, 2 alternating current pin input ends and a direct current negative end, the 2 alternating current pin input ends and the direct current negative end are connected with the first welding strip, and the L-shaped metal lead further comprises a second welding strip and a direct current positive end, the direct current positive end is connected with the second welding strip;
the welding strips of the first diode chip, the second diode chip, the metal lead frame and the L-shaped metal lead are positioned in the epoxy packaging body, 2 alternating current pin input ends and a direct current negative end of the metal lead frame extend out of the epoxy packaging body, and a direct current positive end of the L-shaped metal lead extends out of the epoxy packaging body;
the first welding strip and the first convex columns are connected with the positive ends of the first diode chip and the second diode chip through first soldering lug layers;
the surfaces of second welding strips of the L-shaped metal leads are distributed with a plurality of second convex columns at intervals, and the second welding strips and the second convex columns are connected with the negative ends of the first diode chip and the second diode chip through second welding sheet layers;
the input end of the alternating current pin and the area of the direct current negative end of the metal lead frame, which is close to the first welding strip, are provided with a first flange plate, a plurality of first through holes are formed on the first flange plate at intervals along the circumferential direction, and the first flange plate is positioned in the epoxy packaging body;
the areas, close to the second welding strips, of the direct-current positive ends of the L-shaped metal leads are provided with second flange plates, a plurality of second through holes are formed in the second flange plates at intervals along the circumferential direction, and the second flange plates are located in the epoxy packaging body;
the first bonding strip of the metal lead frame and the second bonding strip of the L-shaped metal lead are respectively provided with a convex bulge part protruding outwards in the areas of the first diode chip and the second diode chip, so that a concave part is formed inside.
The further improved scheme in the technical scheme is as follows:
1. in the above scheme, the positive terminals of the first diode chip and the second diode chip are respectively provided with a glass passivation layer, and the height of the first convex column is lower than that of the second convex column.
2. In the above scheme, the first soldering lug layer and the second soldering lug layer are tin layers or silver layers.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages:
1. the invention relates to a high-power thin patch bridge rectifier, wherein a plurality of first convex columns are distributed on the surface of a first welding strip of a metal lead frame at intervals, the first welding strip and the first convex columns are connected with a first diode chip and the positive electrode end of a second diode chip through a first welding sheet layer, a plurality of second convex columns are distributed on the surface of a second welding strip of an L-shaped metal lead at intervals, and the second welding strip and the second convex columns are connected with the first diode chip and the negative electrode end of the second diode chip through a second welding sheet layer.
2. The invention relates to a high-power thin patch bridge rectifier.A first flange plate is arranged in the areas of an alternating current pin input end and a direct current negative end of a metal lead frame, which are close to a first welding strip, and the first flange plate is provided with a plurality of first through holes at intervals along the circumferential direction and is positioned in an epoxy packaging body; the areas, close to the second welding strips, of the direct-current positive ends of the L-shaped metal leads are provided with second flange plates, a plurality of second through holes are formed in the second flange plates at intervals along the circumferential direction, and the second flange plates are located in the epoxy packaging body; the first welding strip of the metal lead frame and the second welding strip of the L-shaped metal lead are respectively provided with a bulge part protruding outwards in the areas of the first diode chip and the second diode chip, so that a concave part is formed inside; the bonding strength of the first metal lead, the second metal lead and the chip and the epoxy packaging body is further reinforced, the layering phenomenon caused by follow-up long-time use is avoided, water vapor is effectively prevented from entering the device, and the weather resistance and the overall strength are improved.
Drawings
FIG. 1 is a schematic structural diagram of a high-power thin patch bridge rectifier according to the present invention;
fig. 2 is a partial schematic view of fig. 1.
In the above drawings: 11. a first diode chip; 12. a second diode chip; 2. a metal lead frame; 21. a first welding bar; 22. an alternating current pin input end; 23. a direct current negative terminal; 3. an L-shaped metal lead; 31. a second weld bar; 32. a direct current positive terminal; 4. a glass passivation layer; 6. an epoxy package; 71. a first solder pad layer; 72. a second solder pad layer; 8. a first convex column; 9. a second convex column; 10. a first flange plate; 101. a first through hole; 11. a second flange plate; 111. a second through hole; 12. a protrusion portion; 121. a recessed portion; 122. a third via.
Detailed Description
Example 1: a high-power thin patch bridge rectifier comprises: the LED chip comprises a first diode chip 11, a second diode chip 12, a metal lead frame 2 and an L-shaped metal lead 3, wherein the metal lead frame 2 further comprises a first welding strip 21, 2 alternating current pin input ends 22 and a direct current negative end 23 which are connected with the first welding strip 21, and the L-shaped metal lead 3 further comprises a second welding strip 31 and a direct current positive end 32 which is connected with the second welding strip 31;
the welding strips of the first diode chip 11, the second diode chip 12, the metal lead frame 2 and the L-shaped metal lead 3 are positioned in the epoxy packaging body 6, 2 alternating current pin input ends 22 and a direct current negative end 23 of the metal lead frame 2 extend out of the epoxy packaging body 6, and a direct current positive end 32 of the L-shaped metal lead 3 extends out of the epoxy packaging body 6;
the first welding strips 21 and the first convex columns 8 are connected with the positive terminals of the first diode chip 11 and the second diode chip 12 through a first welding sheet layer 71;
the surfaces of the second welding strips 31 of the L-shaped metal lead 3 are distributed with a plurality of second convex columns 9 at intervals, and the second welding strips 31 and the second convex columns 9 are connected with the cathode ends of the first diode chip 11 and the second diode chip 12 through a second welding sheet layer 72;
the ac pin input end 22 and the dc negative end 23 of the metal lead frame 2 are provided with a first flange plate 10 at the area close to the first solder bar 21, the first flange plate 10 is provided with a plurality of first through holes 101 at intervals along the circumferential direction, and the first flange plate 10 is located in the epoxy encapsulation body 6;
the direct current positive end 32 of the L-shaped metal lead 3 near the second solder bar 31 has a second flange plate 11, the second flange plate 11 has a plurality of second through holes 111 spaced along the circumference, and the second flange plate 11 is located in the epoxy package 6;
the first bonding bar 21 of the metal lead frame 2 and the second bonding bar 31 of the L-shaped metal lead 3 each have a protrusion 12 protruding outward in the area of the first diode chip 11 and the second diode chip 12, thereby forming a recess 121 on the inner side.
The first and second solder layers 71 and 72 are tin layers.
Example 2: a high-power thin patch bridge rectifier comprises: the LED chip comprises a first diode chip 11, a second diode chip 12, a metal lead frame 2 and an L-shaped metal lead 3, wherein the metal lead frame 2 further comprises a first welding strip 21, 2 alternating current pin input ends 22 and a direct current negative end 23 which are connected with the first welding strip 21, and the L-shaped metal lead 3 further comprises a second welding strip 31 and a direct current positive end 32 which is connected with the second welding strip 31;
the welding strips of the first diode chip 11, the second diode chip 12, the metal lead frame 2 and the L-shaped metal lead 3 are positioned in the epoxy packaging body 6, 2 alternating current pin input ends 22 and a direct current negative end 23 of the metal lead frame 2 extend out of the epoxy packaging body 6, and a direct current positive end 32 of the L-shaped metal lead 3 extends out of the epoxy packaging body 6;
the first welding strips 21 and the first convex columns 8 are connected with the positive terminals of the first diode chip 11 and the second diode chip 12 through a first welding sheet layer 71;
the surfaces of the second welding strips 31 of the L-shaped metal lead 3 are distributed with a plurality of second convex columns 9 at intervals, and the second welding strips 31 and the second convex columns 9 are connected with the cathode ends of the first diode chip 11 and the second diode chip 12 through a second welding sheet layer 72;
the ac pin input end 22 and the dc negative end 23 of the metal lead frame 2 are provided with a first flange plate 10 at the area close to the first solder bar 21, the first flange plate 10 is provided with a plurality of first through holes 101 at intervals along the circumferential direction, and the first flange plate 10 is located in the epoxy encapsulation body 6;
the direct current positive end 32 of the L-shaped metal lead 3 near the second solder bar 31 has a second flange plate 11, the second flange plate 11 has a plurality of second through holes 111 spaced along the circumference, and the second flange plate 11 is located in the epoxy package 6;
the first bonding bar 21 of the metal lead frame 2 and the second bonding bar 31 of the L-shaped metal lead 3 each have a protrusion 12 protruding outward in the area of the first diode chip 11 and the second diode chip 12, thereby forming a recess 121 on the inner side.
The positive ends of the first diode chip 11 and the second diode chip 12 are respectively provided with a glass passivation layer 4, and the height of the first convex column 8 is lower than that of the second convex column 9.
The first and second solder layers 71 and 72 are silver layers.
The height of the first convex column 8 of the metal lead frame 2 is less than that of the second convex column 9 of the L-shaped metal lead 3.
When the high-power thin patch bridge rectifier is adopted, the surfaces of the first welding strips of the metal lead frame are distributed with a plurality of first convex columns at intervals, the first welding strips and the first convex columns are connected with the first diode chip and the anode end of the second diode chip through the first soldering lug layer, the surfaces of the second welding strips of the L-shaped metal lead are distributed with a plurality of second convex columns at intervals, the second welding strips and the second convex columns are connected with the first diode chip and the cathode end of the second diode chip through the second soldering lug layer, the position deviation of the diode chip and the metal lead in the welding process is effectively improved, the virtual welding is avoided, the reliability of a device is improved, and the service life of the chip is prolonged; in addition, the bonding strength of the first metal lead, the second metal lead and the chip and the epoxy packaging body is further strengthened, the layering phenomenon caused by follow-up long-time use is avoided, water vapor is effectively prevented from entering the interior of the device, and the weather resistance and the overall strength are improved.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (3)
1. A high-power thin patch type bridge rectifier is characterized in that: the method comprises the following steps: the LED chip comprises a first diode chip (11), a second diode chip (12), a metal lead frame (2) and an L-shaped metal lead (3), wherein the metal lead frame (2) further comprises a first welding strip (21), 2 alternating current pin input ends (22) and a direct current negative end (23) which are connected with the first welding strip (21), and the L-shaped metal lead (3) further comprises a second welding strip (31) and a direct current positive end (32) which is connected with the second welding strip (31);
the welding strips of the first diode chip (11), the second diode chip (12), the metal lead frame (2) and the L-shaped metal lead (3) are positioned in the epoxy packaging body (6), 2 alternating current pin input ends (22) and a direct current negative end (23) of the metal lead frame (2) extend out of the epoxy packaging body (6), and a direct current positive end (32) of the L-shaped metal lead (3) extends out of the epoxy packaging body (6);
the first welding strips (21) of the metal lead frame (2) are provided with a plurality of first convex columns (8) at intervals, and the first welding strips (21) and the first convex columns (8) are connected with the positive terminals of the first diode chip (11) and the second diode chip (12) through a first welding sheet layer (71);
the surfaces of second welding strips (31) of the L-shaped metal leads (3) are provided with a plurality of second convex columns (9) at intervals, and the second welding strips (31) and the second convex columns (9) are connected with the negative ends of the first diode chip (11) and the second diode chip (12) through a second welding sheet layer (72);
the alternating current pin input end (22) and the direct current negative end (23) of the metal lead frame (2) are provided with a first flange plate (10) at the area close to the first welding strip (21), the first flange plate (10) is provided with a plurality of first through holes (101) at intervals along the circumferential direction, and the first flange plate (10) is positioned in the epoxy packaging body (6);
the direct current positive end (32) of the L-shaped metal lead (3) is provided with a second flange plate (11) at the area close to the second welding strip (31), the second flange plate (11) is provided with a plurality of second through holes (111) at intervals along the circumferential direction, and the second flange plate (11) is positioned in the epoxy packaging body (6);
the first welding strip (21) of the metal lead frame (2) and the second welding strip (31) of the L-shaped metal lead (3) are respectively provided with a protrusion (12) protruding outwards in the areas of the first diode chip (11) and the second diode chip (12), so that a depression (121) is formed inside, and a third through hole (122) is opened on the protrusion (12).
2. The high-power thin patch-type bridge rectifier according to claim 1, wherein: the positive ends of the first diode chip (11) and the second diode chip (12) are respectively provided with a glass passivation layer (4), and the height of the first convex column (8) is lower than that of the second convex column (9).
3. The high-power thin patch-type bridge rectifier according to claim 1, wherein: the first welding flux layer (71) and the second welding flux layer (72) are tin layers or silver layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010599497.9A CN113851442B (en) | 2020-06-28 | 2020-06-28 | High-power thin-type patch bridge rectifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010599497.9A CN113851442B (en) | 2020-06-28 | 2020-06-28 | High-power thin-type patch bridge rectifier |
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| Publication Number | Publication Date |
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| CN113851442A true CN113851442A (en) | 2021-12-28 |
| CN113851442B CN113851442B (en) | 2024-10-15 |
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2020
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| CN113851442B (en) | 2024-10-15 |
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