CN113838730A - Gas shield ring, plasma processing apparatus and method for regulating and controlling polymer distribution - Google Patents
Gas shield ring, plasma processing apparatus and method for regulating and controlling polymer distribution Download PDFInfo
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- CN113838730A CN113838730A CN202010512729.2A CN202010512729A CN113838730A CN 113838730 A CN113838730 A CN 113838730A CN 202010512729 A CN202010512729 A CN 202010512729A CN 113838730 A CN113838730 A CN 113838730A
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- 238000012545 processing Methods 0.000 title claims abstract description 57
- 229920000642 polymer Polymers 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 27
- 230000001276 controlling effect Effects 0.000 title abstract description 9
- 230000001105 regulatory effect Effects 0.000 title abstract description 7
- 239000007789 gas Substances 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 84
- 238000006243 chemical reaction Methods 0.000 claims abstract description 59
- 239000012495 reaction gas Substances 0.000 claims abstract description 24
- 238000002347 injection Methods 0.000 claims abstract description 9
- 239000007924 injection Substances 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims description 46
- 239000000463 material Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims 4
- 125000006850 spacer group Chemical group 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 description 20
- 230000008569 process Effects 0.000 description 14
- 238000010586 diagram Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 230000033228 biological regulation Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3343—Problems associated with etching
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- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention discloses a gas shielding ring, a plasma processing device and a method for regulating and controlling polymer distribution, wherein the device comprises: the vacuum reaction chamber is internally provided with a base for bearing the substrate. And the gas injection device is used for conveying reaction gas into the vacuum reaction cavity. The plasma confinement ring is arranged around the periphery of the base, is provided with an exhaust channel and comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity, and is used for exhausting reaction gas in the vacuum reaction cavity. And the gas shielding ring is positioned above the inner ring exhaust region of the plasma confinement ring and used for guiding the reaction gas to flow towards the outer ring exhaust region of the plasma confinement ring. The invention can be used for balancing the difference of polymers generated at the center and the edge of the cavity, thereby reducing the difference of the overall appearance and the absolute diameter of an etched sample.
Description
Technical Field
The invention relates to the technical field of semiconductor processing equipment, in particular to a gas shielding ring, a plasma processing device and a method for regulating and controlling polymer distribution.
Background
With the increase of chip manufacturing cost and the rapid development of the industry, the effective utilization area of the wafer is important.
Researches show that in a plasma etching cavity (vacuum reaction cavity), the conditions of uneven distribution of plasma, chemical reaction gas, temperature and the like can cause the nonuniformity of the whole wafer in the etching process, so that the whole wafer cannot be effectively utilized. This non-uniformity is mainly due to the fact that the gas path within the chamber of the vacuum chamber is along the wafer or Edge of the substrate 3, which causes a difference in plasma and polymer distribution in the Center (Center) and Edge (Edge) regions of the wafer.
Disclosure of Invention
The invention aims to provide a gas shielding ring, a plasma processing device and a method for regulating and controlling polymer distribution, so as to balance the difference of polymers generated at the center and the edge of a cavity, enable the edge of a wafer to be still in the uniform area of plasma and the polymers and reduce the overall appearance and the absolute diameter of an etched sample.
In order to achieve the above purpose, the invention is realized by the following technical scheme:
a plasma processing apparatus, comprising: the device comprises a vacuum reaction cavity, wherein a base used for bearing a substrate is arranged in the vacuum reaction cavity. And the gas injection device is used for conveying reaction gas into the vacuum reaction cavity. The plasma confinement ring is arranged around the periphery of the base, is provided with an exhaust channel and comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity, and is used for exhausting reaction gas in the vacuum reaction cavity. And the gas shielding ring is positioned above the inner ring exhaust region of the plasma confinement ring and used for guiding reaction gas to flow to the outer ring exhaust region of the plasma confinement ring.
Preferably, the distance between the gas shield ring and the inner ring exhaust region of the plasma confinement ring is adjustable.
Preferably, a radial width of the gas shield ring is greater than 0 and less than a radial width of the plasma confinement ring.
Preferably, the radial width of the gas shield ring is greater than 0 and less than or equal to two-thirds of the radial width of the plasma confinement ring.
Preferably, the gas shield ring includes a plurality of arc portions, and the plurality of arc portions constitute the gas shield ring.
Preferably, the material of the gas shield ring is ceramic or quartz.
Preferably, the arc parts are correspondingly supported by a plurality of lifters; one end of each lifter is correspondingly connected with one arc-shaped part, and the other end of each lifter is installed on the bottom wall of the vacuum reaction cavity;
each lifter is used for controlling the arc-shaped part to move in the vertical direction according to a preset lifting requirement.
Preferably, the elevator is electrically or pneumatically controlled.
Preferably, an isolation ring is arranged between the plasma confinement ring and the base, a covering ring is arranged above the isolation ring, and the covering ring is connected with the gas shielding ring.
Preferably, a lower surface of the gas shield ring is not higher than an upper surface of the cover ring.
Preferably, the gas shield ring is fixed to the outer periphery of the cover ring.
Preferably, the gas shield ring is integrally formed with the cover ring.
In another aspect, the present invention provides a gas blocking ring for a plasma processing apparatus, the plasma processing apparatus including a base and a focus ring disposed around the base, the base having a plasma confinement ring disposed around its periphery, the gas blocking ring comprising: an inner ring and an outer ring; the outer ring is fixed on the outer side surface of the inner ring and is integrally manufactured with the inner ring, the inner ring is arranged around the focusing ring, the outer ring is positioned above the plasma confinement ring, and at least partially covers the exhaust area of the plasma confinement ring.
In other aspects, the present invention also provides a method for modulating polymer distribution, comprising: when the etching requirement on the substrate is a deep hole or a deep groove with the etching depth-to-width ratio of more than 50%, the position of the gas shielding ring of the plasma processing device is adjusted, and the top surface of the gas shielding ring is flush with the top surface of the covering ring.
When the etching requirement on the substrate is deep holes or grooves with the etching depth-to-width ratio of more than 10% and less than 50%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring is located in the middle of the side wall of the covering ring.
When the etching requirement on the substrate is shallow grooves with the etching depth-to-width ratio smaller than 10%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring is flush with the bottom surface of the side wall of the covering ring.
Compared with the prior art, the invention has at least one of the following advantages:
the present invention provides a plasma processing apparatus, including: the device comprises a vacuum reaction cavity, wherein a base used for bearing a substrate is arranged in the vacuum reaction cavity. And the gas injection device is used for conveying reaction gas into the vacuum reaction cavity. The plasma confinement ring is arranged around the periphery of the base, is provided with an exhaust channel and comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity, and is used for exhausting reaction gas in the vacuum reaction cavity. And the gas shielding ring is positioned above the inner ring exhaust region of the plasma confinement ring and used for guiding reaction gas to flow to the outer ring exhaust region of the plasma confinement ring. The addition of the gas shield ring can be used to balance the difference in polymer generated at the center and edge of the chamber. The existence of the gas shielding ring enables the gas path (polymer path) to extend outwards further, so that the edge of the wafer (substrate) is still in a uniform area of plasma and polymer, the polymer generated in the vacuum reaction chamber can remain on the side wall of the groove or the deep hole, the overall appearance and the absolute diameter of an etched sample can be reduced, and therefore the protection of the polymer is important in the plasma reaction process.
Drawings
FIG. 1 is a schematic structural diagram of a vacuum chamber of a plasma processing apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a regulation ring of a plasma processing apparatus according to an embodiment of the present invention, which is in a low position;
fig. 3 is a schematic diagram of a main structure of a regulation ring of a plasma processing apparatus according to an embodiment of the present invention, the regulation ring being located at a middle position;
FIG. 4 is a schematic view of a control loop of a plasma processing apparatus according to an embodiment of the present invention in a high position;
FIG. 5 is a schematic view of the gas path distribution when the control ring of the plasma processing apparatus is at the high position according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating the effect of polymer deposition on the wafer surface after the wafer is processed by the plasma processing apparatus according to an embodiment of the present invention and the wafer is processed by the plasma processing apparatus without the control ring according to the prior art;
FIG. 7 is a schematic view of a control loop of a plasma processing apparatus according to another embodiment of the present invention, the control loop being in a lower position;
FIG. 8 is a schematic diagram of a control loop of a plasma processing apparatus according to another embodiment of the present invention;
FIG. 9 is a schematic view of a control loop of a plasma processing apparatus according to another embodiment of the present invention, which is shown in a high position;
FIG. 10 is a schematic view of a control ring of a plasma processing apparatus according to another embodiment of the present invention;
fig. 11 is a graph illustrating the effect of the variation of the Critical Dimension (CD) and the Etching Rate (ER) when the control loop of the plasma processing apparatus is located at different positions according to another embodiment of the present invention.
Detailed Description
The gas baffle ring, the plasma processing apparatus and the method for controlling polymer distribution according to the present invention will be described in detail with reference to fig. 1 to 11. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are all used in a non-precise scale for the purpose of facilitating and distinctly aiding in the description of the embodiments of the present invention. To make the objects, features and advantages of the present invention comprehensible, reference is made to the accompanying drawings. It should be understood that the structures, ratios, sizes, and the like shown in the drawings and described in the specification are only used for matching with the disclosure of the specification, so as to be understood and read by those skilled in the art, and are not used to limit the implementation conditions of the present invention, so that the present invention has no technical significance, and any structural modification, ratio relationship change or size adjustment should still fall within the scope of the present invention without affecting the efficacy and the achievable purpose of the present invention.
In a first embodiment, referring to fig. 1 to 6, a plasma processing apparatus includes: a vacuum reaction chamber in which the susceptor 100 for carrying the substrate 300 is disposed. And the gas injection device is used for conveying reaction gas into the vacuum reaction cavity. The plasma confinement ring 800 is arranged around the periphery of the base 100, and an exhaust channel is arranged on the plasma confinement ring 800, and comprises an inner ring exhaust area close to the base 100 and an outer ring exhaust area close to the side wall of the vacuum reaction chamber, and is used for exhausting the reaction gas in the vacuum reaction chamber. And a gas shielding ring 701, which is located above the inner ring exhaust region of the plasma confinement ring 800 and is used for guiding the reaction gas to flow to the outer ring exhaust region of the plasma confinement ring 800.
For convenience of understanding, the structure of the vacuum reaction chamber and the specific structure of the gas injection device are briefly described by taking a capacitively coupled plasma processing apparatus as an example:
with continued reference to fig. 1 and 2, the vacuum chamber is defined by a plurality of walls (e.g., a sidewall 110, a top wall 111, and a bottom wall); the vacuum reaction chamber is provided with a space inside. The vacuum reaction chamber may be evacuated. The other parts of the chamber, except for the gas inlets, gas outlets, and substrate 300 access ports, remain closed and isolated from the environment during processing. The gas inlet is connected to an external gas source for continuously supplying the reaction gas to the vacuum reaction chamber during the process. The gas injection device is disposed on the top wall 111, and specifically, the gas injection device includes: a mounting substrate 112 disposed on an inner surface of the top wall 111; a gas shower head 101 disposed on the mounting substrate 112 and communicating with the gas inlet for supplying a reaction gas to the vacuum reaction chamber.
The exhaust port is connected with an external pump, and is used for exhausting waste gas generated in the treatment process out of the vacuum reaction cavity and controlling the air pressure in the vacuum reaction cavity.
The vacuum reaction chamber is further provided with a base 100 arranged opposite to the gas spray header 101, and an electrostatic chuck 200 (as shown in fig. 2) arranged on the base 100, wherein the gas spray header 120 is used as an upper electrode of the vacuum reaction chamber, the electrostatic chuck 200 is simultaneously used as a lower electrode of the vacuum reaction chamber, and a reaction region is formed between the upper electrode and the lower electrode. At least one radio frequency power supply is applied to one of the upper electrode or the lower electrode through a matching network, a radio frequency electric field is generated between the upper electrode and the lower electrode so as to dissociate reaction gas into plasma, the plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can generate various physical and chemical reactions with the surface of a substrate to be processed, so that the appearance of the surface of the substrate is changed, and the etching process is completed.
In this embodiment, an isolation ring 600 is disposed between the plasma confinement ring 800 and the susceptor 100, a cover ring 700 is disposed above the isolation ring 600, and the cover ring 700 is connected to the gas blocking ring 701. The gas blocking ring 701 is disposed at the periphery of the cover ring 700.
Preferably, in this embodiment, the lower surface of the gas shield ring 701 is not higher than the upper surface of the cover ring 700. Specifically, according to different processes, when the etching requirement on the substrate 300 is a deep hole or a deep groove having an etching aspect ratio greater than 50%, the gas shielding ring 701 is flush with the cover ring 800, that is, the top surface of the gas shielding ring 701 is flush with the top surface of the cover ring 700 (the gas shielding ring is located at a high position), so that the polymer (neutral radical) in the edge region needs to pass through the gas shielding ring 701 before being exhausted from the reaction chamber through the plasma confinement ring 800, and diffuses towards the outer ring exhaust region of the plasma confinement ring 800 in the horizontal direction, thereby reducing the speed of exhausting the polymer (neutral radical) out of the reaction chamber, ensuring the concentration of the polymer (neutral radical) participating in the substrate processing in the edge region, and improving the etching uniformity of the edge region of the substrate 300 and the center region of the substrate 300.
When the etching requirement on the substrate 300 is a deep hole or a trench with an etching aspect ratio of more than 10% and less than 50%, the concentration requirement of the etching process on the polymer (neutral radical) is less than that of the etching process with an aspect ratio of more than 50%, at this time, the gas blocking ring 701 can be adjusted downward to be located at the middle position of the side edge of the cover ring 700, that is, the top surface of the gas blocking ring 701 is located at the middle part of the side wall of the cover ring 700 (the gas blocking ring is located at the middle position), and at this position, the blocking degree of the gas blocking ring on the polymer (neutral radical) is slightly lower than that of the gas blocking ring when the gas blocking ring is located at the high position, so that the polymer can be discharged out of the reaction chamber slightly quickly, and the etching uniformity of the edge region of the substrate 300 and the center region of the substrate 300 is improved.
When the etching requirement on the substrate 300 is a shallow groove with an etching depth-to-width ratio smaller than 10%, the gas shielding ring 701 is located at the bottom of the side wall of the cover ring 700, the top surface of the gas shielding ring 701 is flush with the bottom surface of the side wall of the cover ring 700 (the gas shielding ring is located at a low position), at the moment, the amount of polymer required by the etching process is small, the shielding effect of the gas shielding ring 701 on the polymer can be reduced when the gas shielding ring is located at the low position, and the etching uniformity of the edge area of the substrate 300 and the central area of the substrate 300 is improved. As shown in fig. 5, the curve pointed by the arrow O represents the polymer thickness distribution at the center of the substrate 300 and the edge of the substrate 300 inside the plasma processing apparatus without adding the gas shadow ring 701; the curve pointed by arrow W represents the polymer thickness distribution of the plasma processing apparatus at the center of the substrate 300 and away from the substrate 300 when the gas shield ring 701 is included; it can be seen that when the plasma processing apparatus including the gas baffle ring is used to process the substrate 300, the polymer concentration at the edge of the substrate 300 is increased, and the overall polymer concentration in the reaction chamber is increased, so that the etching rate at the edge of the substrate 300 can be increased, the absolute diameter difference between the center of the substrate 300 and the edge of the substrate 300 can be reduced, and the substrate etching rate can be increased as a whole. The structural or topographical differences caused by etching at the center of the substrate 300 and at the edge of the substrate 300 are optimized.
In some embodiments, the gas shield ring 701 is integrally formed with the cover ring 700, thereby facilitating replacement and installation. In the case where the gas blocking ring 701 is provided, plasma and polymer are distributed more widely, and thus heat transfer is easier, and thus, the temperature in the vacuum reaction chamber is also lowered by the addition of the gas blocking ring 701.
The distance between the gas shield ring 701 and the inner ring exhaust region of the plasma confinement ring 800 is adjustable.
The radial width of the gas shield ring 701 is greater than 0 and less than the radial width of the plasma confinement ring 800.
The radial width of the gas shield ring 701 is greater than 0 and less than or equal to two-thirds of the radial width of the plasma confinement ring 800.
When the gas shielding ring 701 is at the same height as the top surface of the cover ring 701, the distribution of the reaction gas and the plasma in the vacuum reaction chamber can be adjusted by increasing or decreasing the radial width of the gas shielding ring 701, so that the distribution of the polymer or the plasma is more uniform.
Preferably, the material of the gas shield ring 701 is ceramic or quartz. The gas shielding ring 701 is made of a material which can resist corrosion and prolong the service life of the gas shielding ring.
As shown in fig. 1 to 2, the plasma processing apparatus according to the present embodiment further includes: a focus ring 500 and an edge ring 400 are disposed around the susceptor 100, and the focus ring 500 and the edge ring 400 are used to adjust the electric field or temperature distribution around the substrate 300, thereby improving the uniformity of the processing of the substrate 300. The isolation ring 600 is positioned on the edge ring 400 and surrounds the focus ring 500. The plasma confinement ring 800 surrounds the edge ring 400 and a bottom grounded ring 900 is disposed around the plasma confinement ring 800.
It is understood that the gas baffle ring provided in the present embodiment is applicable to various types of plasma processing apparatuses, such as a capacitively coupled plasma processing apparatus (CCP) and an inductively coupled plasma processing apparatus (ICP), and the present invention is not limited thereto.
In a second embodiment, referring to fig. 7 to 11, a plasma processing apparatus is provided in this embodiment, which includes all the structures described in the first embodiment, and the differences from the first embodiment are as follows:
the gas shielding ring 701 realizes online position adjustment through the lifter 702, and the height of the gas shielding ring can be adjusted according to process requirements without opening a reaction chamber. The time wasted in opening and closing the reaction cavity can be saved, and the throughput of substrate processing is improved.
In order to adjust the substrate processing rates at different phase angles, the present embodiment may further provide that the gas blocking ring 701 includes a plurality of arc portions 7010, and the plurality of arc portions 7010 form the gas blocking ring 701, that is, the plurality of arc portions 7010 are connected end to form the gas blocking ring 701.
The arc portions 7010 are correspondingly supported by the lifters 702; one end of each lifter 702 is correspondingly connected with the mounting part 7011 of one arc part 7010, and the other end of each lifter is mounted on the bottom wall of the vacuum reaction chamber; each lifter 702 is configured to control the arc portion 7010 to move in the vertical direction according to a preset lifting requirement. The elevator 702 is electrically or pneumatically controlled. The embodiment can independently adjust the heights of different arc-shaped parts so as to meet the adjustment of the etching rate of the substrate in different phase angle areas.
When the etching requirement on the substrate 300 is a deep hole or a deep groove with an etching depth-to-width ratio of more than 50%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring 701 is flush with the top surface of the cover ring 700, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
When the etching requirement on the substrate 300 is to etch a deep hole or a trench having an aspect ratio of more than 10% and less than 50%, the position of the gas shielding ring 701 is adjusted, and the top surface of the gas shielding ring 701 is located in the middle of the sidewall of the cover ring 700, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
When the etching requirement on the substrate is a shallow groove with the etching depth-to-width ratio smaller than 10%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring 701 is flush with the bottom surface of the side wall of the cover ring 700, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
It is understood that the height of the arc portion 7010 can be dynamically adjusted to adjust the plasma concentration at the edge of the substrate corresponding to the arc portion 7010 according to the etching requirements of different portions of the substrate 300. Therefore, the height of the gas shielding ring 701 can be adjusted more conveniently so as to observe the influence of the gas shielding ring on the distribution of the reaction gas or the plasma inside the vacuum reaction cavity. This may result in an increase in etch rate at the edge of the substrate 300, reducing the absolute diameter or Critical Dimension (CD) difference between the center of the substrate 300 and the edge of the substrate 300. The structural or topographical differences caused by etching at the center of the substrate 300 and at the edge of the substrate 300 are optimized.
As shown in fig. 11, the absolute diameters of the edge and center of the substrate (the difference is largest, the sidewall polymer at the edge of the substrate has poor protective ability; the Etch Rate (ER) at the edge and center of the substrate is substantially the same) when the gas shadow ring 701 is not present.
The difference of the CD gradually decreases with the change of the position of the gas blocking ring 701, and when the height of the top surface of the gas blocking ring 701 is the same as the height of the top surface of the cover ring (the gas blocking ring is located at a high position), the difference of the CD between the center of the substrate and the edge of the substrate basically disappears, which shows that the gas blocking ring 701 has the advantages of controlling the distribution of the polymer in the vacuum reaction chamber, protecting the appearance of the edge structure of the substrate, and having no obvious change of the etching rate.
Meanwhile, the distribution of the polymer can be controlled to different degrees for the gas shielding rings 701 at different positions (e.g., the gas shielding rings are located at the middle position and the lower position), and the method can be used for different processes.
Therefore, the CD difference generated by the distribution difference of the polymers at the center of the substrate and the edge of the substrate can be eliminated by changing the position of the gas shield ring regulating ring under the condition of not influencing the etching rate at the center of the substrate and the edge of the substrate.
In another aspect, based on the same inventive concept, the present invention also provides a gas shield ring for a plasma processing apparatus, comprising: an inner ring and an outer ring; the outer ring is fixed on the outer side surface of the inner ring and is integrally manufactured with the inner ring. The inner ring may be the cover ring 700 as mentioned in the first embodiment above.
In other aspects, based on the same inventive concept, the present invention also provides a method for regulating polymer distribution, comprising: when the etching requirement on the substrate is deep holes or deep grooves with the etching depth-to-width ratio of more than 50%, the position of the gas shielding ring of the plasma processing device is adjusted, the top surface of the gas shielding ring is flush with the top surface of the covering ring, so that the polymer is uniformly distributed at the edge of the substrate and the center of the substrate.
When the etching requirement on the substrate is deep holes or grooves with the etching depth-to-width ratio of more than 10% and less than 50%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring is positioned in the middle of the side wall of the covering ring, so that the polymer is uniformly distributed on the edge of the substrate and the center of the substrate.
When the etching requirement on the substrate is a shallow groove with the etching depth-to-width ratio smaller than 10%, the position of the gas shielding ring is adjusted, and the top surface of the gas shielding ring is flush with the bottom surface of the side wall of the covering ring, so that the polymer is uniformly distributed on the edge of the substrate and the center of the substrate.
In summary, the present invention provides a plasma processing apparatus, including: the device comprises a vacuum reaction cavity, wherein a base used for bearing a substrate is arranged in the vacuum reaction cavity. And the gas injection device is used for conveying reaction gas into the vacuum reaction cavity. The plasma confinement ring is arranged around the periphery of the base, is provided with an exhaust channel and comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity, and is used for exhausting reaction gas in the vacuum reaction cavity. And the gas shielding ring is positioned above the inner ring exhaust region of the plasma confinement ring and used for guiding reaction gas to flow to the outer ring exhaust region of the plasma confinement ring. The addition of the gas shield ring can be used to balance the difference in polymer generated at the center and edge of the chamber. The existence of the gas shielding ring enables the gas path (polymer path) to extend outwards further, so that the edge of the wafer (substrate) is still in a uniform area of plasma and polymer, the polymer generated in the vacuum reaction chamber can remain on the side wall of the groove or the deep hole, the overall appearance and the absolute diameter of an etched sample can be reduced, and therefore the protection of the polymer is important in the plasma reaction process.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the present invention, it is to be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the present invention and for simplicity in description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered limiting. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (14)
1. A plasma processing apparatus, comprising:
the device comprises a vacuum reaction cavity, a substrate and a substrate support, wherein a base for bearing the substrate is arranged in the vacuum reaction cavity;
the gas injection device is used for conveying reaction gas into the vacuum reaction cavity;
the plasma confinement ring is arranged around the periphery of the base, is provided with an exhaust channel and comprises an inner ring exhaust area close to the base and an outer ring exhaust area close to the side wall of the vacuum reaction cavity, and is used for exhausting reaction gas in the vacuum reaction cavity;
and the gas shielding ring is positioned above the inner ring exhaust region of the plasma confinement ring and used for guiding reaction gas to flow to the outer ring exhaust region of the plasma confinement ring.
2. The plasma processing apparatus of claim 1, wherein a distance between the gas shield ring and an inner ring exhaust region of the plasma confinement ring is adjustable.
3. The plasma processing apparatus of claim 1, wherein a radial width of the gas shield ring is greater than 0 and less than a radial width of the plasma confinement ring.
4. The plasma processing apparatus of claim 1, wherein the radial width of the gas shield ring is greater than 0 and less than or equal to two-thirds of the radial width of the plasma confinement ring.
5. The plasma processing apparatus of claim 1, wherein the gas shield ring comprises a plurality of arcuate portions, the plurality of arcuate portions making up the gas shield ring.
6. The plasma processing apparatus of claim 1, wherein the material of the gas shield ring is ceramic or quartz.
7. The plasma processing apparatus as claimed in claim 5, wherein the plurality of arc-shaped portions are supported by a plurality of lifters; one end of each lifter is correspondingly connected with one arc-shaped part, and the other end of each lifter is installed on the bottom wall of the vacuum reaction cavity;
each lifter is used for controlling the arc-shaped part to move in the vertical direction according to a preset lifting requirement.
8. The plasma processing apparatus of claim 7, wherein the elevator is electrically or pneumatically controlled.
9. The plasma processing apparatus of claim 1, wherein a spacer ring is disposed between the plasma confinement ring and the pedestal, and a cover ring is disposed over the spacer ring, the cover ring being coupled to the gas shield ring.
10. The plasma processing apparatus of claim 9 wherein a lower surface of the gas shield ring is no higher than an upper surface of the cover ring.
11. The plasma processing apparatus of claim 9 wherein the gas shield ring is secured to the periphery of the cover ring.
12. The plasma processing apparatus of claim 9 wherein the gas shield ring is integrally formed with the cover ring.
13. A gas blocker ring for a plasma processing apparatus, the plasma processing apparatus including a pedestal and a focus ring disposed around the pedestal, a plasma confinement ring disposed about a periphery of the pedestal, comprising:
an inner ring and an outer ring; the outer ring is fixed on the outer side surface of the inner ring and is integrally manufactured with the inner ring, the inner ring is arranged around the focusing ring, the outer ring is positioned above the plasma confinement ring, and at least partially covers the exhaust area of the plasma confinement ring.
14. A method of modulating polymer distribution, comprising:
when the etching requirement on the substrate is a deep hole or a deep groove with the etching depth-to-width ratio of more than 50%, adjusting the position of a gas shielding ring of the plasma processing device according to any one of claims 1-12, wherein the top surface of the gas shielding ring is flush with the top surface of the covering ring;
when the etching requirement on the substrate is that the etching depth-to-width ratio is more than 10% and less than 50% of a deep hole or a groove, adjusting the position of the gas shielding ring, wherein the top surface of the gas shielding ring is positioned in the middle of the side wall of the covering ring;
and when the etching requirement on the substrate is a shallow groove with the etching depth-to-width ratio smaller than 10%, adjusting the position of the gas shielding ring, wherein the top surface of the gas shielding ring is flush with the bottom surface of the side wall of the covering ring.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010512729.2A CN113838730B (en) | 2020-06-08 | 2020-06-08 | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution |
| TW110110059A TWI791202B (en) | 2020-06-08 | 2021-03-19 | Gas shielding ring, plasma processing device and method for regulating polymer distribution |
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| CN202010512729.2A CN113838730B (en) | 2020-06-08 | 2020-06-08 | Gas shielding ring, plasma processing device and method for regulating and controlling polymer distribution |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114300336A (en) * | 2021-12-28 | 2022-04-08 | 拓荆科技股份有限公司 | a plasma reactor |
| TWI855644B (en) * | 2022-05-13 | 2024-09-11 | 大陸商中微半導體設備（上海）股份有限公司 | Lifting ring and plasma processing device |
| CN119742216A (en) * | 2025-03-05 | 2025-04-01 | 无锡尚积半导体科技股份有限公司 | Multi-stage air inlet ICP etching device with adjustable air outlet position |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115881506B (en) * | 2023-03-02 | 2023-06-27 | 深圳市新凯来技术有限公司 | Plasma adjusting device and semiconductor etching equipment |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1022263A (en) * | 1996-06-28 | 1998-01-23 | Sony Corp | Plasma etching device |
| JP2004342703A (en) * | 2003-05-13 | 2004-12-02 | Tokyo Electron Ltd | Device and method for plasma treatment |
| US20050224180A1 (en) * | 2004-04-08 | 2005-10-13 | Applied Materials, Inc. | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| US20060236932A1 (en) * | 2005-04-22 | 2006-10-26 | Kenetsu Yokogawa | Plasma processing apparatus |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
| WO2011026127A2 (en) * | 2009-08-31 | 2011-03-03 | Lam Research Corporation | A local plasma confinement and pressure control arrangement and methods thereof |
| CN103187234A (en) * | 2011-12-30 | 2013-07-03 | 中微半导体设备(上海)有限公司 | Adjustable constraint device used for plasma processing device |
| KR20140049474A (en) * | 2012-10-16 | 2014-04-25 | 주식회사 엘지실트론 | Susceptor for epitaxial growth and epitaxial growth method |
| KR20140117890A (en) * | 2013-03-27 | 2014-10-08 | (주)이루자 | Apparatus of treating substrate, and methods of manufacturing substrate for electronic device and flat display device using the same |
| US20150060404A1 (en) * | 2013-09-03 | 2015-03-05 | Lam Research Corporation | System, Method and Apparatus for Coordinating Pressure Pulses and RF Modulation in a Small Volume Confined Process Reactor |
| CN104704141A (en) * | 2012-10-18 | 2015-06-10 | 应用材料公司 | Shadow frame support |
| TW201606845A (en) * | 2014-05-12 | 2016-02-16 | Tokyo Electron Ltd | Plasma treatment device and exhaust structure thereof |
| TWM590776U (en) * | 2018-05-02 | 2020-02-11 | 美商應用材料股份有限公司 | Processing tool and flow conductance regulation system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9184028B2 (en) * | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
| US20130059448A1 (en) * | 2011-09-07 | 2013-03-07 | Lam Research Corporation | Pulsed Plasma Chamber in Dual Chamber Configuration |
-
2020
- 2020-06-08 CN CN202010512729.2A patent/CN113838730B/en active Active
-
2021
- 2021-03-19 TW TW110110059A patent/TWI791202B/en active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1022263A (en) * | 1996-06-28 | 1998-01-23 | Sony Corp | Plasma etching device |
| JP2004342703A (en) * | 2003-05-13 | 2004-12-02 | Tokyo Electron Ltd | Device and method for plasma treatment |
| US20050224180A1 (en) * | 2004-04-08 | 2005-10-13 | Applied Materials, Inc. | Apparatus for controlling gas flow in a semiconductor substrate processing chamber |
| US20060236932A1 (en) * | 2005-04-22 | 2006-10-26 | Kenetsu Yokogawa | Plasma processing apparatus |
| WO2011026127A2 (en) * | 2009-08-31 | 2011-03-03 | Lam Research Corporation | A local plasma confinement and pressure control arrangement and methods thereof |
| CN201681788U (en) * | 2010-04-02 | 2010-12-22 | 中微半导体设备(上海)有限公司 | Reaction chamber part and plasma processing device employing same |
| CN103187234A (en) * | 2011-12-30 | 2013-07-03 | 中微半导体设备(上海)有限公司 | Adjustable constraint device used for plasma processing device |
| KR20140049474A (en) * | 2012-10-16 | 2014-04-25 | 주식회사 엘지실트론 | Susceptor for epitaxial growth and epitaxial growth method |
| CN104704141A (en) * | 2012-10-18 | 2015-06-10 | 应用材料公司 | Shadow frame support |
| KR20140117890A (en) * | 2013-03-27 | 2014-10-08 | (주)이루자 | Apparatus of treating substrate, and methods of manufacturing substrate for electronic device and flat display device using the same |
| US20150060404A1 (en) * | 2013-09-03 | 2015-03-05 | Lam Research Corporation | System, Method and Apparatus for Coordinating Pressure Pulses and RF Modulation in a Small Volume Confined Process Reactor |
| TW201606845A (en) * | 2014-05-12 | 2016-02-16 | Tokyo Electron Ltd | Plasma treatment device and exhaust structure thereof |
| TWM590776U (en) * | 2018-05-02 | 2020-02-11 | 美商應用材料股份有限公司 | Processing tool and flow conductance regulation system |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114300336A (en) * | 2021-12-28 | 2022-04-08 | 拓荆科技股份有限公司 | a plasma reactor |
| CN114300336B (en) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | Plasma reactor |
| TWI855644B (en) * | 2022-05-13 | 2024-09-11 | 大陸商中微半導體設備（上海）股份有限公司 | Lifting ring and plasma processing device |
| CN119742216A (en) * | 2025-03-05 | 2025-04-01 | 无锡尚积半导体科技股份有限公司 | Multi-stage air inlet ICP etching device with adjustable air outlet position |
| CN119742216B (en) * | 2025-03-05 | 2025-05-13 | 无锡尚积半导体科技股份有限公司 | Multi-stage air inlet ICP etching device with adjustable air outlet position |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI791202B (en) | 2023-02-01 |
| CN113838730B (en) | 2024-05-14 |
| TW202147382A (en) | 2021-12-16 |
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