CN113834576A - Temperature sensing device and temperature sensing method - Google Patents
Temperature sensing device and temperature sensing method Download PDFInfo
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- CN113834576A CN113834576A CN202010511989.8A CN202010511989A CN113834576A CN 113834576 A CN113834576 A CN 113834576A CN 202010511989 A CN202010511989 A CN 202010511989A CN 113834576 A CN113834576 A CN 113834576A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K3/00—Thermometers giving results other than momentary value of temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
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Abstract
The invention provides a temperature sensing device and a temperature sensing method. The temperature sensing device comprises a sensor and an analog-digital converter. The sensor generates a first sensing result corresponding to the ambient temperature based on a first condition and generates a second sensing result corresponding to the ambient temperature based on a second condition. The second sensing result is different from the first sensing result. The analog-digital converter performs division operation on the first sensing result and the second sensing result to obtain a quotient value, and generates an output digital code value corresponding to the environment temperature according to the quotient value.
Description
Technical Field
The present invention relates to a temperature sensing device and a temperature sensing method, and more particularly, to a temperature sensing device and a temperature sensing method with high accuracy.
Background
Generally, a temperature sensing device senses temperature through a sensor to generate a single analog signal corresponding to the temperature. And the analog signal is converted into a digital signal through a conversion circuit. However, the above-mentioned method may cause the digital signal to be shifted due to the voltage variation of the power source received by the conversion circuit. In order to improve the shift of the digital signal, the foregoing I460409 discloses that the voltage variation is eliminated by the temperature correction unit. However, the above-mentioned calibration method may increase the design complexity of the temperature sensing device.
Disclosure of Invention
The invention provides a temperature sensing device and a temperature sensing method, which can improve the sensing precision of the temperature sensing device and reduce the complexity of temperature sensing.
The temperature sensing device of the invention comprises a sensor and an analog-digital converter. The sensor is configured to generate a first sensing result corresponding to an ambient temperature based on a first condition and generate a second sensing result corresponding to the ambient temperature based on a second condition different from the first condition. The first sensing result is different from the second sensing result and the analog-digital converter is coupled with the sensor. The analog-to-digital converter is configured to divide the first sensing result and the second sensing result to obtain a quotient value, and generate an output digital code value corresponding to the ambient temperature according to the quotient value.
The temperature sensing method of the present invention includes: generating a first sensing result corresponding to the ambient temperature based on a first condition, and generating a second sensing result corresponding to the ambient temperature based on a second condition different from the first condition, wherein the first sensing result is different from the second sensing result; and performing division operation on the first sensing result and the second sensing result to obtain a quotient value, and generating an output digital code value corresponding to the environment temperature according to the quotient value.
Based on the above, the present invention provides the first sensing result and the second sensing result by the sensor in response to the ambient temperature, and the first sensing result is different from the second sensing result, so the present invention can eliminate the voltage variation of the power supply by division, thereby improving the sensing accuracy corresponding to the temperature. In addition, the present invention does not require an additional temperature correction means. The complexity of temperature sensing can be reduced.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention.
FIG. 1 is a schematic diagram of a temperature sensing device according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a temperature sensing device according to a second embodiment of the present invention;
FIG. 3 is a schematic diagram of a sensor circuit according to an embodiment of the present invention;
FIG. 4 is a graph illustrating temperature trends of the first sensing result, the second sensing result and the top reference voltage according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a temperature sensing device according to a third embodiment of the present invention;
FIG. 6 is a graph illustrating quotient and temperature values according to an embodiment of the present invention;
FIG. 7 is a graph illustrating a relationship between an output digital code value and a temperature value according to an embodiment of the present invention;
FIG. 8 is a flow chart of a method for sensing temperature according to an embodiment of the present invention.
Description of the reference numerals
100. 200, 300, a temperature sensing device;
110, a sensor;
120. 220, 320, analog-digital converter;
221, an arithmetic unit;
322, a lookup table;
d1, a first digital code value;
d2, a second digital code value;
DOUT, outputting digital code value;
IS1 first current source;
IS2 second current source;
q is quotient value;
q1: a first bipolar transistor;
q2_1 to Q2_ m are second bipolar transistors;
s110, S120, step;
t1, T2, T3 ambient temperature;
VREFP is the top reference voltage value;
VSEN1 first sensing result;
VSEN2 second sensing result;
and Δ V is the variation of the top reference voltage value.
Detailed Description
Some embodiments of the invention will now be described in detail with reference to the drawings, wherein like reference numerals are used to refer to like or similar elements throughout the several views. These examples are only a part of the present invention and do not disclose all possible embodiments of the present invention. Rather, these embodiments are merely exemplary of the apparatus and methods within the scope of the present invention.
Referring to fig. 1, fig. 1 is a schematic diagram of a temperature sensing device according to a first embodiment of the invention. In the present embodiment, the temperature sensing device 100 includes a sensor 110 and an analog-to-digital converter 120. The sensor 110 generates a first sensing result VSEN1 corresponding to an ambient temperature based on a first condition. The sensor 110 also generates a second sensing result VSEN2 corresponding to the ambient temperature based on a second condition. In the present embodiment, the first sensing result VSEN1 and the second sensing result VSEN2 are analog voltage signals, respectively, but the invention is not limited thereto. In some embodiments, the first sensing result VSEN1 and the second sensing result VSEN2 are analog current signals, respectively. In this embodiment, the first condition is different from the second condition, so the first sensing result is different from the second sensing result. For example, the first condition and the second condition are a first sensing sensitivity and a second sensing sensitivity of the sensor 110, respectively. The first sensing sensitivity of the sensor 110 is designed to be different from the second sensing sensitivity. For example, the sensing sensitivity of the first condition may be designed to be higher than the sensing sensitivity of the second condition. For another example, the sensing sensitivity of the first condition may be designed to be lower than the sensing sensitivity of the second condition. The adc 120 is coupled to the sensor 110 to receive the first sensing result VSEN1 and the second sensing result VSEN 2. The adc 120 divides the first sensing result VSEN1 and the second sensing result VSEN2 to obtain a quotient Q, and generates an output digital code value DOUT corresponding to the ambient temperature according to the quotient Q.
It should be noted that the temperature sensing apparatus 100 provides the first sensing result VSEN1 corresponding to the ambient temperature based on the first condition and the second sensing result VSEN2 corresponding to the ambient temperature based on the second condition by the sensor 110. Since the first condition is different from the second condition, the present invention can eliminate the voltage variation of the power supply by a division operation to generate the output digital code value DOUT corresponding to the ambient temperature. The sensing accuracy of the temperature sensing apparatus 100 can be improved. In addition, the temperature sensing device 100 does not require an additional temperature correction means. Therefore, the design complexity of the temperature sensing device 100 can be reduced.
Referring to fig. 2, fig. 2 is a schematic view of a temperature sensing device according to a second embodiment of the invention. In the present embodiment, the temperature sensing device 200 includes a sensor 110 and an analog-to-digital converter 220. The analog-digital converter 220 includes an arithmetic unit 221. The operation unit 221 is coupled to the sensor 110. The operation unit 221 receives the first sensing result VSEN1 and the second sensing result VSEN2 from the sensor 110. The operation unit 221 converts the first sensing result VSEN1 into a first digital code value D1, and converts the second sensing result VSEN2 into a second digital code value D2. The operation unit 221 divides the first digital code value D1 and the second digital code value D2 to obtain a quotient Q.
In the present embodiment, the arithmetic unit 221 may convert the first sensing result VSEN1 into a first digital code value D1 and convert the second sensing result VSEN2 into a second digital code value D2 based on a top reference voltage value (e.g., VREFP) inside the analog-to-digital converter 220. For example, the operation unit 221 may convert the first sensing result VSEN1 into a first digital code value D1 according to formula (1), and convert the second sensing result VSEN2 into a second digital code value D2 according to formula (2).
D1＝VSEN1/(VREFP±ΔV)×2n… … … … … … … … … formula (1)
D2＝VSEN2/(VREFP±ΔV)×2n… … … … … … … … … formula (2)
Where n is equal to the number of bits of the analog-to-digital converter 220. It should be noted that the top reference voltage may vary (i.e., + - Δ V) due to the environmental temperature or the process variation, thereby shifting the first and second digital code values D1 and D2. Therefore, the operation unit 221 divides the first digital code value D1 and the second digital code value D2 according to formula (3) to obtain the quotient Q. In formula (3), the quotient Q is the result of dividing the first digital code value D1 by the second digital code value D2. In some embodiments, the quotient value Q may be the result of the operation of dividing the second digital code value D2 by the first digital code value D1.
It should be noted that, through the operation of the formula (3), the operation unit 221 can remove the top reference voltage value and the variation of the top reference voltage value (i.e., VREFP ± Δ V). As a result, the sensing accuracy of the temperature sensing device 200 can be improved. In addition, the temperature sensing device 200 does not require an additional temperature correction means. The design complexity of the temperature sensing device 200 can be reduced.
Referring to fig. 1 and fig. 3, fig. 3 is a schematic circuit diagram of a sensor according to an embodiment of the invention. In the present embodiment, the sensor 110 includes a first current source IS1 and a first bipolar transistor Q1. The base of the first bipolar transistor Q1 IS coupled to the collector of the first bipolar transistor Q1, the adc 120 and the first current source IS 1. The emitter of the first bipolar transistor Q1 is coupled to a reference low potential (e.g., ground). In the present embodiment, the sensor 110 may provide the first condition by the configuration of the first current source IS1 and the first bipolar transistor Q1. The base and collector of the first bipolar transistor Q1 are collectively referred to as the first output of the sensor 110. The sensor 110 provides the first sensing result VSEN1 to the analog-to-digital converter 120 via the first output terminal. The first bipolar transistor Q1 of the present embodiment is implemented by an NPN bipolar transistor.
In some embodiments, the first bipolar transistor Q1 may be replaced by a diode. For example, the anode of the diode IS coupled to the first current source IS1 and the analog-to-digital converter 120. The anode of the diode is used as a first output of the sensor 110. The cathode of the diode is coupled to a reference low potential.
In some embodiments, the first bipolar transistor Q1 may be replaced by any type of N-type field effect transistor. For example, the gate of the NFET IS coupled to the drain of the NFET, the first current source IS1 and the ADC 120. The gate and the drain of the NFET are commonly used as the first output terminal of the sensor 110. The source of the NFET is coupled to a low reference potential.
In the present embodiment, the sensor 110 further includes a second current source IS2 and second bipolar transistors Q2_ 1-Q2 _ m. The base of the second bipolar transistor Q2_1 IS coupled to the collector of the second bipolar transistor Q2_1, the adc 120 and the second current source IS 2. The emitter of the second bipolar transistor Q2_1 is coupled to the reference low. The base of the second bipolar transistor Q2_2 IS coupled to the collector of the second bipolar transistor Q2_2, the adc 120 and the second current source IS 2. The emitter of the second bipolar transistor Q2_2 is coupled to the reference low, and so on. That is, the second bipolar transistors Q2_1 to Q2 — m are respectively diode-connected (diode-connected) connected and connected in parallel to each other. In the present embodiment, the sensor 110 may provide a second condition different from the first condition by the configuration of the second current source IS2 and the second bipolar transistors Q2_1 to Q2 — m.
The base and collector of the second bipolar transistors Q2_ 1-Q2 _ m are commonly used as the second output terminal of the sensor 110. The sensor 110 provides the second sensing result VSEN2 to the analog-to-digital converter 120 via the second output terminal. The second bipolar transistors Q2_1 to Q2_ m of the present embodiment are implemented by NPN bipolar transistors, respectively.
In some embodiments, the second bipolar transistors Q2_ 1-Q2 _ m can be replaced by diodes, respectively. For example, anodes of the plurality of diodes are commonly coupled to the first current source IS1 and the analog-to-digital converter 120. The anodes of the plurality of diodes collectively serve as a second output terminal of the sensor 110. Cathodes of the plurality of diodes are commonly coupled to a reference low potential.
In some embodiments, the second bipolar transistors Q2_ 1-Q2 _ m can be replaced by any type of NFET. For example, the gates of the N-type field effect transistors are respectively coupled to the drains of the N-type field effect transistors, the first current source IS1 and the adc 120. The gates and drains of the N-type field effect transistors are commonly used as the second output terminal of the sensor 110. The sources of the N-type field effect transistors are coupled to a reference low potential.
For convenience of illustration, the number of the first bipolar transistors Q1 of the present embodiment is one. The number of the first bipolar transistors of the present invention may be plural, and the number of the first bipolar transistors is smaller than the number of the second bipolar transistors. The number of the first bipolar transistors of the present invention is not limited to the embodiment.
Referring to fig. 2, fig. 3 and fig. 4, fig. 4 is a temperature trend graph of the first sensing result, the second sensing result and the top reference voltage according to an embodiment of the invention. The internal top reference voltage VREFP of the adc 220 may vary (i.e., ± Δ V) due to variations in ambient temperature or manufacturing process. Based on the design of fig. 3, the first sensing result VSEN1 and the second sensing result VSEN2 decrease as the temperature increases. In addition, the variation of the first sensing result VSEN1 is greater than the variation of the second sensing result VSEN2 (the invention is not limited thereto). It can be seen that, based on the design of fig. 3, the variation of the first sensing result VSEN1 is larger than the variation of the second sensing result VSEN 2. For example, at the ambient temperature T1, a difference corresponding to the ambient temperature T1 is generated between the second sensing result VSEN2 and the first sensing result VSEN 1. At the ambient temperature T2, a difference corresponding to the ambient temperature T2 is generated between the second sensing result VSEN2 and the first sensing result VSEN 1. At the ambient temperature T3, a difference corresponding to the ambient temperature T3 is generated between the second sensing result VSEN2 and the first sensing result VSEN 1. The differences corresponding to the ambient temperatures T1, T2, T3 are different from each other (e.g., difference corresponding to ambient temperature T3 > difference corresponding to ambient temperature T2 > difference corresponding to ambient temperature T1). Therefore, the operation unit 221 of the analog-to-digital converter 220 can obtain the quotient Q associated with the ambient temperatures T1, T2, T3 by a division operation. Since the quotient Q has removed the top reference voltage VREFP and the variation of the top reference voltage VREFP (i.e., VREFP ± Δ V), the quotient Q is not shifted by the influence of the top reference voltage VREFP.
In the present embodiment, the current value provided by the first current source IS1 may be greater than the current value provided by the second current source IS 2. In this way, the variation of the first sensing result VSEN1 is greater than the variation of the second sensing result VSEN2, so as to improve the recognition effect of the temperature sensing apparatus 200 on the ambient temperatures T1, T2 and T3.
Referring to fig. 5, fig. 6 and fig. 7, fig. 5 is a schematic view of a temperature sensing device according to a third embodiment of the invention. FIG. 6 is a graph illustrating a relationship between a quotient value and a temperature value according to an embodiment of the present invention. FIG. 7 is a diagram illustrating a relationship between an output digital code value and a temperature value according to an embodiment of the present invention. In the present embodiment, the temperature sensing device 300 includes the sensor 110 and an analog-to-digital converter 320. The analog-to-digital converter 320 includes a look-up table 322. In the embodiment, the first condition is different from the second condition, such that the variation of the first sensing result VSEN1 is larger than the variation of the second sensing result VSEN 2. Accordingly, the analog-to-digital converter 320 divides the first sensing result VSEN1 by the second sensing result VSEN2 to generate a quotient Q. Therefore, in the relationship diagram shown in fig. 6, the quotient Q is lower as the temperature (i.e., the ambient temperature) is higher, but the invention is not limited thereto. In some embodiments, the analog-to-digital converter 320 may divide the second sensing result VSEN2 by the first sensing result VSEN1 to generate a quotient Q. Therefore, in the map shown in fig. 6, the higher the temperature (i.e., the ambient temperature), the higher the quotient Q.
The adc 320 generates the output digital code value DOUT according to the quotient Q and the look-up table 322. In the present embodiment, the relationship between the quotient Q and the temperature value (e.g., fig. 6) and the relationship between the temperature value and the output digital code value DOUT (e.g., fig. 7) can be used as the lookup table 322. That is, the lookup table 322 records a temperature value corresponding to the quotient Q, and also records an output digital code value DOUT corresponding to the temperature value. Therefore, the adc 320 can generate a temperature value according to the quotient Q and the lookup table 322, and generate an output digital code value DOUT according to the temperature value and the lookup table 322.
To ensure that the trend presented in fig. 6 is monotonicity (monotonics) and to improve the sensing resolution, the number of bits of the adc 320 is larger than 12 bits. For example, the analog-to-digital converter 320 may output an output digital code value DOUT of 16 bits.
In some embodiments, the analog-to-digital converter 320 further includes an operation unit (the operation unit 221 of the second embodiment). In such embodiments, the adc 320 can obtain the quotient Q through the aforementioned equations (1) to (3).
Referring to fig. 1 and 8, fig. 8 is a flowchart illustrating a temperature sensing method according to an embodiment of the invention. In step S110, a first sensing result VSEN1 corresponding to the ambient temperature is generated based on the first condition, and a second sensing result VSEN2 corresponding to the ambient temperature is generated based on the second condition. In step S120, the first sensing result VSEN1 and the second sensing result VSEN2 are divided to obtain a quotient Q, and an output digital code value DOUT corresponding to the ambient temperature is generated according to the quotient Q. Step S120 may be performed by the analog-to-digital converter 120. It should be understood that the temperature sensing method flow of fig. 8 can also be applied to the temperature sensing device 200 of the second embodiment and the temperature sensing device 300 of the third embodiment. The implementation details of steps S110 and S120 may be sufficiently taught by the embodiments in fig. 1 to 7, and therefore cannot be reiterated here.
In summary, the temperature sensing apparatus and the temperature sensing method of the present invention generate a first sensing result corresponding to the ambient temperature based on a first condition by the sensor, and generate a second sensing result corresponding to the ambient temperature based on a second condition. Because the first sensing result is different from the second sensing result, the voltage variation of the power supply can be eliminated through division operation, and the sensing precision of temperature sensing is improved. In addition, the present invention does not require an additional temperature correction means. Thus, the design complexity of the temperature sensing device can be reduced.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
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