CN113823992B - Semiconductor device manufacturing method and semiconductor device - Google Patents

Abstract

The invention discloses a semiconductor device manufacturing method, which comprises at least one etching process, wherein the etching process is used for transferring a pattern to an etching target layer formed by a first III-V group semiconductor material by taking a patterned photoresist as a mask and removing the photoresist; the etching process comprises the following steps: forming an isolation layer made of a second III-V semiconductor material on the etching target layer, wherein the second III-V semiconductor material and the first III-V semiconductor material have corrosion selectivity and are in lattice matching; coating photoresist on the isolation layer and patterning the photoresist; taking the patterned photoresist as a mask, and transferring the pattern to the isolation layer and the etching target layer in an etching way; removing at least part of the photoresist; and removing the isolation layer and the residual photoresist on the isolation layer by a selective wet etching process. The invention also discloses a semiconductor device. The invention can realize the complete removal of the photoresist in the etching process, and hardly causes damage to the surface of the etching target layer.

Description

Semiconductor device manufacturing method and semiconductor device

technical field

The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing semiconductor devices based on III-V compounds.

Background technique

III-V group compound is a compound formed by B, Al, Ga, In of group III and N, P, As, Sb of group V in the periodic table of elements. The so-called group III-V semiconductor is composed of the above-mentioned group III The binary compound formed with group V elements has a chemical ratio of 1:1. III-V compound semiconductor materials have been widely used in optoelectronic devices, optoelectronic integration, ultra-high-speed microelectronic devices and ultra-high frequency microwave devices and circuits, and have broad prospects. The III-V semiconductors currently used in industry are mainly gallium arsenide (GaAs), indium phosphide (InP) and gallium nitride.

Due to the characteristics of the material itself, the manufacturing process of semiconductor devices based on III-V compounds has many differences compared with traditional Si and Ge-based semiconductors. For example, semiconductor devices made of Si-based materials have a mature CMOS process. After designing the required device structure in advance, it can be manufactured according to a unified process; and III-V compound semiconductors are very different in terms of dry etching gas and wet etching liquid due to different materials. For example, the commonly used etching gases for gallium arsenide materials are chlorine gas, argon gas, and boron trichloride. The commonly used etching gases for indium phosphide materials are chlorine, methane, and argon, which also include the removal of photoresist in the etching process. In the manufacturing process of semiconductor devices, at least one etching process is often required to etch the required pattern on the semiconductor substrate or layer structure; this process usually uses a patterned photoresist as a mask to To achieve the purpose of etching the substrate or layer structure according to the design on the mask plate, after the etching is completed, the photoresist needs to be stripped from the wafer surface for the next process. The existing photoresist removal methods mainly fall into the following categories: the first type is the direct resist removal method. That is, when removing the photoresist, use an organic solvent (such as acetone) or a special degumming solution to remove the photoresist. This method has two disadvantages. One is that the degumming time is relatively long and water bath heating is required. But the glue removal is often not clean and thorough enough, which is the biggest shortcoming of this method. The second type is the plasma pre-bombardment method. This type of method is to perform plasma bombardment (mainly oxygen ionized plasma) on the photoresist before the photoresist is used as a mask for dry etching, so that the combination of the photoresist and the etching material is not so tight. This makes it easier to remove the photoresist later when organic solvents are used to remove it. The main disadvantage of this type of method is that the photoresist cannot be removed completely, and it can only achieve a certain improvement effect. The third category is the oxygen glow method. In this type of method, the photoresist is first removed using an organic solvent. At this time, some photoresist remains on the surface of the etching material. After that, O2 is used in ICP to bombard the surface of the etching material to remove the photoresist. This method will first cause damage to the surface of the etching material, and for some easily oxidized materials, the etching material will be oxidized, thereby affecting the performance of the device.

Contents of the invention

The technical problem to be solved by the present invention is to overcome the deficiencies of the existing photoresist removal process, and provide a semiconductor device manufacturing method, which can realize the complete removal of photoresist in the etching process, and has almost no effect on the surface of the etching target layer. Do not cause damage.

The present invention specifically adopts the following technical solutions to solve the above technical problems:

A method for manufacturing a semiconductor device, comprising at least one etching process, for using a patterned photoresist as a mask to transfer the pattern to an etching target layer composed of a first III-V semiconductor material, And remove the photoresist; the etching process includes the following steps:

Form an isolation layer made of a second III-V group semiconductor material on the etching target layer, the second III-V group semiconductor material and the first III-V group semiconductor material have corrosion selectivity and both crystal lattices match;

Applying and patterning a photoresist on the isolation layer;

Using the patterned photoresist as a mask, etching and transferring the pattern to the isolation layer and the etching target layer;

removing at least a portion of the photoresist;

The isolation layer and the residual photoresist thereon are removed by a selective wet etching process.

Preferably, the isolation layer is formed on the etching target layer by means of epitaxial growth.

Preferably, the thickness of the isolation layer is 50nm-150nm.

As one of the preferred solutions of the present invention, the first III-V group semiconductor material is Al _x Ga _1-x As, and the second III-V group semiconductor material is Aly Ga _{1-y As} , wherein x is The value range is 0-0.4, and the value range of y is 0.7-1.

Preferably, the selective etching solution used in the selective wet etching process is an HF solution system.

Further preferably, the selective etching solution is a diluted HF solution with a dilution ratio of HF:H ₂ O=1:20.

As another preferred solution of the present invention, the first III-V group semiconductor material is Al _x Ga _1-x As, and the second III-V group semiconductor material is Aly Ga _{1-y As} , wherein x is The value range is 0.8 to 1, and the value range of y is 0 to 0.2.

Preferably, the selective etching solution used in the selective wet etching process is a mixture of 50% citric acid solution and 30% hydrogen peroxide solution in a volume ratio of 1:1 to 3:1.

Further preferably, the selective etching solution is formed by mixing 50% citric acid solution and 30% hydrogen peroxide solution in a volume ratio of 1:2.

As another preferred solution of the present invention, the first III-V group semiconductor material is InGaAs, and the second III-V group semiconductor material is InP.

Preferably, the selective etching solution used in the selective wet etching process is: H ₃ PO ₄ :HCl=3:1～10:1 acidic solution, or HCl:H ₂ O =5:1～3 :1 acidic solution, or HCl:H ₃ PO ₄ :H ₂ O =3:1:1 acidic solution.

Further preferably, the selective etching solution is an acidic solution of HCl:H ₂ O =3:1.

As another preferred solution of the present invention, the first III-V group semiconductor material is InGaAsP, and the second III-V group semiconductor material is InP.

Preferably, the selective etching solution used in the selective wet etching process is: an acidic solution of HCl:CH ₃ COOH=1:1, or an acidic solution of HCl:H ₂ O =2:1~1:1 , or an acidic solution of H ₃ PO ₄ :HBr =1:1.

Further preferably, the selective etching solution is an acidic solution of HCl:H ₂ O =1:1.

Based on the above technical scheme, it is also possible to obtain:

A semiconductor device manufactured using the method described in any of the above technical solutions.

Compared with the prior art, the technical solution of the present invention has the following beneficial effects:

According to the extremely strong selective wet etching characteristics of the III-V semiconductor material system, the present invention sets an isolation layer between the etching target layer and the photoresist that has corrosion selectivity and lattice matching with the etching target layer. layer, and then use a selective wet etching process to remove the isolation layer and the photoresist on it after the etching is completed. Compared with the existing various stripping solutions, the photoresist can be removed more thoroughly, and the etching The surface of the target layer is hardly damaged.

Description of drawings

Figure 1 is a schematic diagram of a traditional deglue solution in the VCSEL chip manufacturing process;

Fig. 2 is a schematic diagram of the degumming scheme of the present invention.

Detailed ways

Aiming at the deficiencies in the existing degelling technology, the solution of the present invention is based on the extremely strong selective wet etching characteristics of the III-V semiconductor material system, by setting and etching between the etching target layer and the photoresist. Etch the isolation layer with etch selectivity and lattice matching between the target layer, and then use the selective wet etching process to remove the isolation layer and the photoresist on it after the etching is completed, so that the photoresist percentage can be achieved It can be easily removed without causing any damage to the surface of the etching target layer.

The method for manufacturing a semiconductor device of the present invention includes at least one etching process, which is used to use the patterned photoresist as a mask to transfer the pattern to the etching target layer composed of the first III-V semiconductor material , and remove the photoresist; the etching process includes the following steps:

Form an isolation layer made of a second III-V group semiconductor material on the etching target layer, the second III-V group semiconductor material and the first III-V group semiconductor material have corrosion selectivity and both crystal lattices match;

Applying and patterning a photoresist on the isolation layer;

Using the patterned photoresist as a mask, etching and transferring the pattern to the isolation layer and the etching target layer;

removing at least a portion of the photoresist;

The isolation layer and the residual photoresist thereon are removed by a selective wet etching process.

In order to facilitate the public's understanding, the technical solution of the present invention will be described in detail below through a set of specific embodiments and in conjunction with the accompanying drawings:

Example 1:

The semiconductor device in this embodiment is a vertical-cavity surface-emitting laser (Vertical-Cavity Surface-Emitting Laser, VCSEL for short). In the VCSEL chip, on the DBR layer of the Al _x Ga _1-x As material used and on the GaAs substrate (the value of x ranges from 0 to 0.4), it is necessary to etch steps with smooth side walls, steep sides, and flat bottoms. . In order to make the pattern required by the device, it is necessary to apply photoresist on the epitaxial wafer for photolithography to form a photoresist mask, as shown in Figure 1; then it is necessary to use the photoresist as a mask to etch Al _x Ga _1-x As and GaAs materials. Due to the long etching time, it is easy to cause carbonization of the photoresist during the dry etching process. The existing technology is to use oxygen (O ₂ ) for plasma bombardment and acetone to remove the photoresist, but these methods are likely to cause photoresist residue, dirty spots on the surface of the film, or damage to the surface of the material, affecting device performance.

To solve this problem, this embodiment adopts the following etching process:

Step 1. Make the isolation layer:

In the process of making VCSEL chips, a thinner Al _y Ga _{1-y As layer} (y ranges from 0.7 to 1 ) as an isolation layer for subsequent photoresist removal. The Al _y Ga _1-y As layer and the Al _x Ga _1-x As layer have extremely strong selective corrosion characteristics, and the lattices of the two are matched, and there will be no fracture between wafer layers due to stress. adverse effects. Wherein, the thickness of the isolation layer is preferably 50 nm to 150 nm, and in this embodiment, it is 100 nm to 150 nm. The isolation layer can be formed by the existing physical vapor deposition method or chemical vapor deposition method, and can also be grown by molecular beam epitaxy; the epitaxial growth method is preferred. Obtained by secondary epitaxial growth before etching.

Step 2, making a photoresist mask:

As shown in FIG. 2, a photoresist is coated on the AlxGa1 _{- xAs} layer on which the isolation layer is formed, and a photoresist mask is fabricated by photolithography.

Step 3, etching pattern:

The Al _y Ga _1-y As layer and the Al _x Ga _1-x As material are etched using an ICP etching machine. The etch parameters for AlxGa1 _{- xAs} do not need to be changed. This is because: when etching the Al _x Ga _1-x As material, the gas used is chlorine, boron trichloride and argon, and the dry etching properties of the Al _y Ga _{1- y} As layer are basically the same as those of the above-mentioned materials. The same, and due to the extremely thin thickness, the impact on the original etching process can basically be ignored.

Step 4. Remove at least part of the photoresist:

The main purpose of this step is to expose as much of the surface of the isolation layer as possible to speed up the subsequent selective wet etching. It is not necessary to care about the quality of photoresist removal and whether it will cause damage to the surface of the isolation layer. Therefore, various existing wet or dry degumming methods can be flexibly used according to the actual situation, and it is best to choose the method with the most convenient operation and the lowest cost. In this embodiment, an organic solvent such as acetone is used to clean the photoresist.

Step 5. Selective wet etching to remove the isolation layer:

Due to the long dry etching process, part of the photoresist will be carbonized and difficult to remove, and some non-volatile by-products will cover the surface of the photoresist, which is difficult to solve in the existing photoresist removal scheme. The present invention removes the isolation layer through a selective wet etching process, specifically, only the Al _y Ga _1-y As of the isolation layer is etched away by a selective etching solution, and at the same time, the Al _x Ga 1-y As of the etching target layer is not affected. _1-x As has an effect. The selective etching solution used in the selective wet etching process is an HF solution system, including but not limited to: BOE solution, buffered HF (HF:NH ₄ F:H ₂ O=3:6:10) solution, diluted HF solution (volume ratio of 1:5-1:30 to water is acceptable), HF (48w t%)/CrO ₃ (33w t%) (volume ratio from 0.01 to 0.138) mixed solution. Among them, BOE solution, buffered HF (HF:NH ₄ F:H ₂ O=3:6:10) solution, and 1:5~1:15 diluted HF concentration are high, and the corrosion rate is too fast, while HF ( 48w t% ) /CrO ₃ ( 33w t% ) (volume ratio from 0.01 to 0.138) mixed solution contains chromium, which is very toxic and easy to cause harm to the human body; therefore, a 1:20 diluted HF solution is preferred, Its corrosion rate is moderate, easy to configure, and has high selective corrosion.

Release the epitaxial wafer after degumming in step 4 in the 1:20 diluted HF solution for 90 seconds and stir properly, then clean the corrosion solution with deionized water, and then use a cotton ball dipped in acetone to gently wipe the surface of the epitaxial wafer, Dip a cotton ball with isopropanol and gently wipe the surface of the epitaxial wafer, repeat this cycle several times, and finally clean it with deionized water. At this time, the isolation layer has been completely removed, and the residual photoresist attached to the isolation layer is also completely removed at the same time. The RMS of the etch target layer after final processing is 0.2nm, which is basically the same level of surface smoothness as epitaxial growth.

Example 2:

The semiconductor device in this embodiment is a Brillouin laser. In the Brillouin laser, the waveguide width, etching depth, side wall smoothness and surface cleanliness of the etching target layer Al _x Ga _1-x As (x ranges from 0.8 to 1) have very high requirements. In order to make the device, it is necessary to apply photoresist on the epitaxial wafer for photolithography to form a photoresist mask, and then use the photoresist as a mask to etch Al _x Ga _1-x As (the value range of x is 0.8~1) to form a waveguide. Al _x Ga _1-x As (x ranges from 0.8 to 1) materials are easily oxidized. If oxygen (O ₂ ) is used for plasma bombardment, it is easy to oxidize the waveguide layer material, which greatly reduces the transmission loss of the device. increase, and will significantly affect the emission spectrum of the laser.

This embodiment specifically adopts the following etching process:

Step 1. Make the isolation layer:

In this embodiment, the isolation layer material selected for etching the target layer Al _x Ga _1-x As (the value range of x is 0.8-1) is Al _y Ga _1-y As (the value range of y is 0-0.2 ). These two materials have extremely strong selective corrosion characteristics, and the lattices of the two materials are matched, so there will be no adverse effects such as fracture between layers due to stress. Wherein, the thickness of the isolation layer is preferably 50 nm to 150 nm, and in this embodiment, it is 100 nm to 150 nm. The isolation layer can be formed by using the existing physical vapor deposition method or chemical vapor deposition method, or by molecular beam epitaxy growth, preferably the epitaxial growth method.

Step 2, making a photoresist mask:

A photoresist is coated on the AlxGa1 _{- xAs} layer on which the isolation layer is formed, and a photoresist mask is fabricated by photolithography.

Step 3, etching pattern:

The Al _y Ga _1-y As layer and the Al _x Ga _1-x As material are etched using an ICP etching machine. The etch parameters for AlxGa1 _{- xAs} do not need to be changed. This is because: when etching the Al _x Ga _1-x As material, the gas used is chlorine, boron trichloride and argon, and the dry etching properties of the Al _y Ga _{1- y} As layer are basically the same as those of the above-mentioned materials. The same, and due to the extremely thin thickness, the impact on the original etching process can basically be ignored.

Step 4. Remove at least part of the photoresist:

The main purpose of this step is to expose as much of the surface of the isolation layer as possible to speed up the subsequent selective wet etching. It is not necessary to care about the quality of photoresist removal and whether it will cause damage to the surface of the isolation layer. Therefore, various existing wet or dry degumming methods can be flexibly used according to the actual situation, and it is best to choose the method with the most convenient operation and the lowest cost. In this embodiment, an organic solvent such as acetone is used to clean the photoresist.

Step 5. Selective wet etching to remove the isolation layer:

The selective corrosion solution selected in this embodiment is: 50% citric acid solution and 30% hydrogen peroxide solution are mixed from 1:1 to 3:1 by volume (50% citric acid solution is composed of monohydrate citric acid crystals and Ionized water is made according to the mass ratio of 1:1); the optimal ratio of corrosion solution is 1:2, the selective corrosion of this ratio of corrosion solution is the highest, and the maximum selection ratio can reach 116.

Wet release the epitaxial wafer after degumming in step 4 in the selective etching solution for 90s and stir properly, then clean the etching solution with deionized water, and then use a cotton ball dipped in acetone to gently wipe the surface of the epitaxial wafer, a cotton ball dipped in Use isopropanol to gently wipe the surface of the epitaxial wafer, repeat this cycle several times, and finally clean it with deionized water. At this time, the isolation layer has been completely removed, and the residual photoresist attached to the isolation layer is also completely removed at the same time. The RMS of the etch target layer after final processing is 0.2nm, which is basically the same level of surface smoothness as epitaxial growth.

Example 3:

The semiconductor device in this embodiment is a 1.1 micron band laser. The luminescence peak of the active layer InGaAs material is located in this band. In order to improve the luminous efficiency and lower the threshold, sometimes a special design of the active layer is required. In lasers, the smooth, steep sidewalls act as resonator mirrors, so epitaxial wafers are dry etched. In order to make the pattern required by the device, it is necessary to apply photoresist on the epitaxial wafer for photolithography to form a photoresist mask, and then use the photoresist as a mask to etch the InGaAs layer. Since the sidewall of the laser needs to be very smooth and clean, the residue of the photoresist will cause the laser to leak, resulting in an increase in the laser threshold and a decrease in luminous efficiency, or even failure to generate laser light.

This embodiment specifically adopts the following etching process:

Step 1. Make the isolation layer:

In this embodiment, the material of the isolation layer selected for etching the target layer InGaAs is InP. These two materials have extremely strong selective corrosion characteristics, and the lattices of the two materials are matched, so there will be no adverse effects such as fracture between layers due to stress. Wherein, the thickness of the isolation layer is preferably 50 nm to 150 nm, and in this embodiment, it is 100 nm to 150 nm. The isolation layer can be formed by using the existing physical vapor deposition method or chemical vapor deposition method, or by molecular beam epitaxy growth, preferably the epitaxial growth method.

Step 2, making a photoresist mask:

A photoresist is coated on the InGaAs layer on which the isolation layer is formed, and a photoresist mask is fabricated by photolithography.

Step 3, etching pattern:

The InGaAs layer and the InP layer are etched using an ICP etching machine. The etching parameters of InGaAs do not need to be changed. This is because: when etching InGaAs materials, the gases used are chlorine, methane and argon, and the dry etching properties of the InP layer are basically the same as those of the above-mentioned materials, and due to the extremely thin thickness, the original etching process The impact can basically be ignored.

Step 4. Remove at least part of the photoresist:

The main purpose of this step is to expose as much of the surface of the isolation layer as possible to speed up the subsequent selective wet etching. It is not necessary to care about the quality of photoresist removal and whether it will cause damage to the surface of the isolation layer. Therefore, various existing wet or dry degumming methods can be flexibly used according to the actual situation, and it is best to choose the method with the most convenient operation and the lowest cost. In this embodiment, an organic solvent such as acetone is used to clean the photoresist.

Step 5. Selective wet etching to remove the isolation layer:

The selective etching solution selected in this embodiment is: H ₃ PO ₄ :HCl=3:1～10:1 acidic solution, or HCl:H ₂ O=5:1～3:1 acidic solution, or HCl:H ₃ PO ₄ :H ₂ O =3:1:1 acidic solution. The acidic solution of HCl:H ₂ O =3:1 is preferred, which has high selectivity for InGaAs/InP, and only involves one kind of acid, and the ratio is simple.

Wet release the epitaxial wafer after degumming in step 4 in the selective etching solution for 90s and stir properly, then clean the etching solution with deionized water, and then use a cotton ball dipped in acetone to gently wipe the surface of the epitaxial wafer, a cotton ball dipped in Use isopropanol to gently wipe the surface of the epitaxial wafer, repeat this cycle several times, and finally clean it with deionized water. At this time, the isolation layer has been completely removed, and the residual photoresist attached to the isolation layer is also completely removed at the same time. The etch target layer after final processing has approximately the same level of surface smoothness as the epitaxial growth.

Example 4:

The semiconductor device in this embodiment is a 1.7 micron band laser. The luminescence peak of the active layer InGaAsP material is located in this band. In order to improve the luminous efficiency and lower the threshold, sometimes a special design of the active layer is required. In lasers, the smooth, steep sidewalls act as resonator mirrors, so epitaxial wafers are dry etched. In order to make the pattern required by the device, it is necessary to smear photoresist on the epitaxial wafer for photolithography to form a photoresist mask. Then need to use photoresist as a mask to etch InGaAsP. Since the sidewall of the laser needs to be very smooth and clean, the residue of the photoresist will cause the laser to leak, resulting in an increase in the laser threshold and a decrease in luminous efficiency, or even failure to generate laser light.

This embodiment specifically adopts the following etching process:

Step 1. Make the isolation layer:

In this embodiment, the material of the isolation layer selected for etching the target layer InGaAsP is InP. These two materials have extremely strong selective corrosion characteristics, and the lattices of the two materials are matched, so there will be no adverse effects such as fracture between layers due to stress. Wherein, the thickness of the isolation layer is preferably 50 nm to 150 nm, and in this embodiment, it is 100 nm to 150 nm. The isolation layer can be formed by using the existing physical vapor deposition method or chemical vapor deposition method, or by molecular beam epitaxy growth, preferably the epitaxial growth method.

Step 2, making a photoresist mask:

A photoresist is coated on the InGaAsP layer on which the isolation layer is formed, and a photoresist mask is fabricated by photolithography.

Step 3, etching pattern:

The InGaAsP layer and the InP layer are etched using an ICP etching machine. The etch parameters of InGaAsP do not need to be changed. This is because: when etching InGaAsP materials, the gases used are chlorine, methane and argon, and the dry etching properties of the InP layer are basically the same as those of the above-mentioned materials, and due to the extremely thin thickness, it is difficult for the original etching process. The impact can basically be ignored.

Step 4. Remove at least part of the photoresist:

The main purpose of this step is to expose as much of the surface of the isolation layer as possible to speed up the subsequent selective wet etching. It is not necessary to care about the quality of photoresist removal and whether it will cause damage to the surface of the isolation layer. Therefore, various existing wet or dry degumming methods can be flexibly used according to the actual situation, and it is best to choose the method with the most convenient operation and the lowest cost. In this embodiment, an organic solvent such as acetone is used to clean the photoresist.

Step 5. Selective wet etching to remove the isolation layer:

The selective etching solution selected in this example is: HCl:CH ₃ COOH=1:1 acidic solution, or HCl:H ₂ O =2:1~1:1 acidic solution, or H ₃ PO ₄ : HBr = 1:1 acidic solution; the preferred corrosive solution is HCl:H2O (1:1), which has high selective corrosion and simple proportion, and is less toxic and safe than H ₃ PO ₄ :HBr (1:1) The coefficient is high.

Wet the epitaxial wafer after degumming in step 4 in the selective etching solution for 90 seconds and stir properly, then clean the etching solution with deionized water, and then use a cotton ball to dip acetone to gently wipe the surface of the epitaxial wafer, and a cotton ball to remove Gently wipe the surface of the epitaxial wafer with isopropanol, repeat this cycle several times, and finally clean it with deionized water. At this time, the isolation layer has been completely removed, and the residual photoresist attached to the isolation layer is also completely removed at the same time. The etch target layer after final processing has approximately the same level of surface smoothness as the epitaxial growth.

Claims (16)

1. A semiconductor device manufacturing method, comprising at least one etching process, for using patterned photoresist as a mask, transferring the pattern to an etching target made of a first III-V semiconductor material layer, and remove the photoresist; it is characterized in that, the etching process comprises the following steps: Form an isolation layer made of a second III-V group semiconductor material on the etching target layer, the second III-V group semiconductor material and the first III-V group semiconductor material have corrosion selectivity and both crystal lattices match; Applying and patterning a photoresist on the isolation layer; Using the patterned photoresist as a mask, etching and transferring the pattern to the isolation layer and the etching target layer; removing at least a portion of the photoresist; The isolation layer and the residual photoresist thereon are removed by a selective wet etching process. 2 . The method for manufacturing a semiconductor device according to claim 1 , wherein the isolation layer is formed on the etching target layer by means of epitaxial growth. 3 . 3 . The method for manufacturing a semiconductor device according to claim 1 , wherein the isolation layer has a thickness of 50 nm˜150 nm. 4 . 4. The method for manufacturing a semiconductor device according to claim 1, wherein the first III-V semiconductor material is AlxGa1 _{- xAs} , and the second III-V semiconductor material is _{AlyGa 1-y} As, wherein, the value range of x is 0-0.4, and the value range of y is 0.7-1. 5. The method for manufacturing a semiconductor device according to claim 4, wherein the selective etching solution used in the selective wet etching process is an HF solution system. 6 . The method for manufacturing a semiconductor device according to claim 5 , wherein the selective etching solution is a diluted HF solution with a dilution ratio of HF:H ₂ O=1:20. 7. The method for manufacturing a semiconductor device according to claim 1, wherein the first III-V group semiconductor material is AlxGa1 _{- xAs} , and the second III-V group semiconductor material is _{AlyGa 1-y} As, wherein, the value range of x is 0.8-1, and the value range of y is 0-0.2. 8. semiconductor device manufacturing method as claimed in claim 7, it is characterized in that, the used selective etching solution of described selective wet etching process is 50% citric acid solution and 30% hydrogen peroxide solution by 1: 1～3: 1 volume ratio mixed. 9. semiconductor device manufacturing method as claimed in claim 8, is characterized in that, described selective etching solution is that 50% citric acid solution and 30% hydrogen peroxide solution are mixed by the volume ratio of 1:2. 10 . The method for manufacturing a semiconductor device according to claim 1 , wherein the first III-V group semiconductor material is InGaAs, and the second III-V group semiconductor material is InP. 11 . 11. The method for manufacturing a semiconductor device according to claim 10, wherein the selective etching solution used in the selective wet etching process is: H ₃ PO ₄ :HCl=3:1～10:1 acidic solution, or an acidic solution of HCl:H ₂ O =5:1～3:1, or an acidic solution of HCl:H ₃ PO ₄ :H ₂ O =3:1:1. 12 . The method for manufacturing a semiconductor device according to claim 11 , wherein the selective etching solution is an acidic solution of HCl:H ₂ O=3:1. 13. The method for manufacturing a semiconductor device according to claim 1, wherein the first III-V group semiconductor material is InGaAsP, and the second III-V group semiconductor material is InP. 14. The method for manufacturing a semiconductor device according to claim 13, wherein the selective etching solution used in the selective wet etching process is: HCl:CH ₃ COOH=1:1 acidic solution, or HCl: H ₂ O =2:1~1:1 acidic solution, or H ₃ PO ₄ :HBr =1:1 acidic solution. 15 . The method for manufacturing a semiconductor device according to claim 14 , wherein the selective etching solution is an acidic solution of HCl:H ₂ O=1:1. 16. A semiconductor device, characterized in that it is manufactured using the method according to any one of claims 1 to 15.

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