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CN113805221B - Radiation detection device - Google Patents

Radiation detection device Download PDF

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CN113805221B
CN113805221B CN202010528565.2A CN202010528565A CN113805221B CN 113805221 B CN113805221 B CN 113805221B CN 202010528565 A CN202010528565 A CN 202010528565A CN 113805221 B CN113805221 B CN 113805221B
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pixels
line
background
electrically connected
data
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CN113805221A (en
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赖俊福
郑顺成
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Ruisheng Optoelectronics Co ltd
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Ruisheng Optoelectronics Co ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01TMEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T7/00Details of radiation-measuring instruments
    • G01T7/005Details of radiation-measuring instruments calibration techniques
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/80Camera processing pipelines; Components thereof
    • H04N23/81Camera processing pipelines; Components thereof for suppressing or minimising disturbance in the image signal generation

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  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Measurement Of Radiation (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

The present disclosure provides a radiation detection apparatus including a detection panel. The detection panel comprises a plurality of first pixels arranged in a first row along the extending direction of the data line, a plurality of second pixels arranged in a second row along the extending direction of the data line and a plurality of second pixels arranged in a third row along the extending direction of the data line. Each of the plurality of first pixels includes a first switch, and each of the plurality of second pixels and the other plurality of second pixels includes a second switch. Each of the plurality of second pixels and the another plurality of second pixels includes a photodiode. The first pixels do not include photodiodes, i.e., each of the second pixels further includes photodiodes electrically connected to the second switches as compared to the first pixels.

Description

辐射检测装置Radiation detection device

技术领域Technical Field

本公开涉及一种检测设备,尤其涉及一种辐射检测装置。The present disclosure relates to a detection device, and in particular to a radiation detection apparatus.

背景技术Background Art

对于一般的辐射检测装置的去除基本背景值(offset)的处理上,通常会受到动态因素的影响,其中包括读出电路芯片的模拟至数字转换器的变异,或者是来自栅极端的电源噪声等,甚至读出电路芯片的模式切换也会影响操作温度,进而影响到检测值。换言之,由于如上述动态因素的影响,一般的辐射检测装置在取得基本背景值信息的过程中,所取得的基本背景值信息实际上已与检测的曝光信息之间存在差异。对此,一般的校正方式仅是通过遮蔽光电二极管(photodiode)的方式来避免曝光的影响,但是由于连接光电二极管的电路回路理论上会存在暗电流或其他缺陷的影响,因此一般的辐射检测装置无法提供适当的基本背景值信息。有鉴于此,以下将提出几个实施例的解决方案。The process of removing the basic background value (offset) of a general radiation detection device is usually affected by dynamic factors, including the variation of the analog-to-digital converter of the readout circuit chip, or the power supply noise from the gate end, etc. Even the mode switching of the readout circuit chip will affect the operating temperature, and thus affect the detection value. In other words, due to the influence of the above-mentioned dynamic factors, when a general radiation detection device obtains basic background value information, the basic background value information obtained is actually different from the detected exposure information. In this regard, the general correction method is only to avoid the influence of exposure by shielding the photodiode. However, since the circuit loop connecting the photodiode will theoretically be affected by dark current or other defects, the general radiation detection device cannot provide appropriate basic background value information. In view of this, several embodiments of the solution will be proposed below.

发明内容Summary of the invention

本公开是针对一种辐射检测装置,可有效地取得背景噪声来用于校正辐射检测结果。The present disclosure is directed to a radiation detection device, which can effectively obtain background noise for correcting radiation detection results.

根据本公开的实施例,本公开的辐射检测装置包括检测面板。检测面板包括多个第一像素沿着数据线延伸方向排列为第一排、多个第二像素沿着数据线延伸方向排列为第二排以及另多个第二像素沿着数据线延伸方向排列为第三排。所述多个第一像素的每一个包括第一开关。所述多个第二像素以及所述另多个第二像素的每一个包括第二开关。所述多个第二像素以及所述另多个第二像素的每一个包括光电二极管,并且所述多个第一像素不包括光电二极管,即所述多个第二像素以及所述另多个第二像素的每一个相较于所述多个第一像素还包括与第二开关电性连接的光电二极管。According to an embodiment of the present disclosure, the radiation detection device of the present disclosure includes a detection panel. The detection panel includes a plurality of first pixels arranged in a first row along the extension direction of the data line, a plurality of second pixels arranged in a second row along the extension direction of the data line, and another plurality of second pixels arranged in a third row along the extension direction of the data line. Each of the plurality of first pixels includes a first switch. Each of the plurality of second pixels and the other plurality of second pixels includes a second switch. Each of the plurality of second pixels and the other plurality of second pixels includes a photodiode, and the plurality of first pixels do not include a photodiode, that is, each of the plurality of second pixels and the other plurality of second pixels also includes a photodiode electrically connected to the second switch compared to the plurality of first pixels.

根据本公开的实施例,本公开的辐射检测装置包括检测面板。检测面板包括偏压线、第一像素以及第二像素。第一像素以及第二像素的分别包括开关与光电二极管。所述多个第一像素与偏压线电性绝缘。所述多个第二像素与偏压线电性连接。According to an embodiment of the present disclosure, the radiation detection device of the present disclosure includes a detection panel. The detection panel includes a bias line, a first pixel and a second pixel. The first pixel and the second pixel respectively include a switch and a photodiode. The plurality of first pixels are electrically insulated from the bias line. The plurality of second pixels are electrically connected to the bias line.

基于上述,本公开的辐射检测装置可通过不具有光电二极管的像素或是与偏压线电性绝缘的像素来提供合适的背景噪声,以有效地取得背景噪声用于校正辐射检测结果。Based on the above, the radiation detection device of the present disclosure can provide appropriate background noise through pixels without photodiodes or pixels electrically insulated from bias lines, so as to effectively obtain background noise for correcting radiation detection results.

为让本公开的上述特征和优点能更明显易懂,下文特举实施例,并配合附图作详细说明如下。In order to make the above features and advantages of the present disclosure more obvious and understandable, embodiments are given below with reference to the accompanying drawings for detailed description as follows.

附图说明BRIEF DESCRIPTION OF THE DRAWINGS

图1是依照本公开的一些实施例中的辐射检测装置的电路示意图;FIG1 is a circuit diagram of a radiation detection device in some embodiments according to the present disclosure;

图2是依照本公开的一些实施例中的辐射检测装置的电路示意图;FIG2 is a circuit diagram of a radiation detection device in some embodiments according to the present disclosure;

图3是依照本公开的一实施例的像素电路示意图;FIG3 is a schematic diagram of a pixel circuit according to an embodiment of the present disclosure;

图4是依照本公开的一些实施例中的辐射检测装置的电路示意图。FIG. 4 is a circuit diagram of a radiation detection device in some embodiments according to the present disclosure.

附图标记说明Description of Reference Numerals

100、200、400:辐射检测装置;100, 200, 400: radiation detection device;

100P、200P、400P:检测面板;100P, 200P, 400P: detection panel;

101、102、201、202、401、402:读出电路;101, 102, 201, 202, 401, 402: readout circuit;

110R、110_1~110_N、120R、120_1~120_N、130R、130_1~130_N、140R、140_1~140_N、210R、210_1~210_N、220R、220_1~220_N、230R、230_1~230_N、240R、240_1~240_N、310R、410_1~410_M、420_1~420_M、430_1~430_N、440_1~440_N:像素;110R, 110_1 to 110_N, 120R, 120_1 to 120_N, 130R, 130_1 to 130_N, 140R, 140_1 to 140_N, 210R, 210_1 to 210_N, 220R, 220_1 to 220_N, 230R, 230_1 to 230_N, 240R, 240_1 to 240_N, 310R, 410_1 to 410_M, 420_1 to 420_M, 430_1 to 430_N, 440_1 to 440_N: pixels;

111R、111_1~111_N、121R、121_1~121_N、131R、131_1~131_N、141R、141_1~141_N、211R、211_1~211_N、221R、221_1~221_N、231R、231_1~231_N、241R、241_1~241_N、311R、411_1~411_M、421_1~421_M、431_1~431_M、441_1~441_M:开关;111R, 111_1 to 111_N, 121R, 121_1 to 121_N, 131R, 131_1 to 131_N, 141R, 141_1 to 141_N, 211R, 211_1 to 211_N, 221R, 221_1 to 221_N, 231R, 231_1 to 231_N, 241R, 241_1 to 241_N, 311R, 411_1 to 411_M, 421_1 to 421_M, 431_1 to 431_M, 441_1 to 441_M: switch;

112_1~112_N、122_1~122_N、132_1~132_N、142_1~142_N、212_1~212_N、222_1~222_N、232_1~232_N、242_1~242_N、312、412_1~412_M、422_1~422_M、432_1~432_M、422_1~422_M:光电二极管;112_1~112_N, 122_1~122_N, 132_1~132_N, 142_1~142_N, 212_1~212_N, 222_1~222_N, 232_1~232_N, 242_1~242_N, 312, 412_1~412_M, 422_1~422_M, 432_1~432_M, 422_1~422_M: photodiode;

R1、R2:背景线;R1, R2: background lines;

D1_1~D1_N、D2_1~D2_N、D1_1~D1_M、D2_1~D2_M:数据线;D1_1~D1_N, D2_1~D2_N, D1_1~D1_M, D2_1~D2_M: data lines;

L1、L2、L1’、L2’:最小间距;L1, L2, L1’, L2’: minimum spacing;

G1、G2、G3:栅极线;G1, G2, G3: gate lines;

BL:偏压线;BL: bias line;

BLS:偏压支线;BLS: Biased Branch Line;

P1:数据线延伸方向;P1: data line extension direction;

P2:栅极线延伸方向。P2: Gate line extension direction.

具体实施方式DETAILED DESCRIPTION

本公开通篇说明书与申请专利范围中会使用某些词汇来指称特定组件。本领域技术人员应理解,显示设备制造商可能会以不同的名称来指称相同的组件。本文并不意在区分那些功能相同但名称不同的组件。在下文说明书与权利要求中,“含有”与“包括”等词为开放式词语,因此其应被解释为“含有但不限定为…”之意。Certain words are used throughout the present disclosure and in the claims to refer to specific components. It should be understood by those skilled in the art that display device manufacturers may refer to the same components by different names. This document does not intend to distinguish between components that have the same function but different names. In the following description and claims, the words "including" and "comprising" are open-ended words and should therefore be interpreted as "including but not limited to...".

在本公开一些实施例中,关于接合、连接的用语例如“连接”、“互连”等,除非特别定义,否则可指两个结构系直接接触,或者亦可指两个结构并非直接接触,其中有其它结构设于此两个结构之间。且此关于接合、连接的用语亦可包含两个结构都可移动,或者两个结构都固定的情况。此外,用语“电性连接”包含任何直接及间接的电性连接手段。In some embodiments of the present disclosure, terms such as "connection" and "interconnection" may refer to two structures being in direct contact, or two structures not being in direct contact, with another structure disposed between the two structures, unless otherwise specified. Such terms may also include situations where both structures are movable or both structures are fixed. In addition, the term "electrically connected" includes any direct and indirect electrical connection means.

说明书与发明申请专利范围中所使用的序数例如“第一”、“第二”等的用词用以修饰组件,其本身并不意含及代表该,或该些,组件有任何之前的序数,也不代表某一组件与另一组件的顺序、或是制造方法上的顺序,该些序数的使用仅用来使具有某命名的组件得以和另一具有相同命名的组件能作出清楚区分。权利要求与说明书中可不使用相同用词,据此,说明书中的第一构件在权利要求中可能为第二构件。须知悉的是,以下所举实施例可以在不脱离本公开的精神下,将数个不同实施例中的技术特征进行替换、重组、混合以完成其他实施例。The ordinal numbers used in the specification and the scope of the invention patent application, such as "first", "second", etc., are used to modify components. They themselves do not mean or represent that or those components have any previous ordinal numbers, nor do they represent the order of a component and another component, or the order of the manufacturing method. The use of these ordinals is only used to make a component with a certain name clearly distinguishable from another component with the same name. The same words may not be used in the claims and the specification. Accordingly, the first component in the specification may be the second component in the claims. It should be noted that the embodiments listed below can replace, reorganize, and mix the technical features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure.

图1是依照本公开的第一实施例的辐射检测装置的电路示意图。参考图1,辐射检测装置100包括检测面板100P。检测面板100P包括像素数组,并且图1为呈现检测面板100P的所述像素数组的一部分。在本实施例中,检测面板100P包括读出电路101、102,并且包括栅极线G1、G2、G3、偏压线BL、背景线R1、R2、数据线D1_1~D1_N、D2_1~D2_N以及像素110R、110_1~110_N、120R、120_1~120_N,其中N为正整数。像素110R、110_1~110_N、120R、120_1~120_N沿着栅极线延伸方向P2排列,在其他实施例,栅极线可能为直线或大部分为直线或者非直线(例如波浪状等),本公开不以此为限。对此,无论栅极线为直线或大部分为直线或者非直线均沿着栅极线延伸方向P2而延伸。像素130R、130_1~130_N、140R、140_1~140_N沿着栅极线延伸方向P2排列。像素110R、110_1~110_N、120R、120_1~120_N设置在栅极线G1、G2之间。像素130R、130_1~130_N、140R、140_1~140_N设置在栅极线G2、G3之间。在本实施例中,读出电路101电性连接背景线R1、数据线D1_1~D1_N,并且经由背景线R1、数据线D1_1~D1_N来读出像素110R、110_1~110_N、130R、130_1~130_N的检测数据。读出电路102电性连接背景线R2、数据线D2_1~D2_N,并且经由背景线R2、数据线D2_1~D2_N来读出像素120R、120_1~120_N、140R、140_1~140_N的检测数据。FIG. 1 is a circuit diagram of a radiation detection device according to a first embodiment of the present disclosure. Referring to FIG. 1 , the radiation detection device 100 includes a detection panel 100P. The detection panel 100P includes a pixel array, and FIG. 1 presents a portion of the pixel array of the detection panel 100P. In the present embodiment, the detection panel 100P includes a readout circuit 101, 102, and includes gate lines G1, G2, G3, bias lines BL, background lines R1, R2, data lines D1_1 to D1_N, D2_1 to D2_N, and pixels 110R, 110_1 to 110_N, 120R, 120_1 to 120_N, where N is a positive integer. The pixels 110R, 110_1 to 110_N, 120R, 120_1 to 120_N are arranged along the gate line extension direction P2. In other embodiments, the gate lines may be straight lines or most of them may be straight lines or non-straight lines (e.g., wavy, etc.), and the present disclosure is not limited thereto. In this regard, whether the gate line is a straight line, a mostly straight line, or a non-straight line, it extends along the gate line extension direction P2. The pixels 130R, 130_1 to 130_N, 140R, 140_1 to 140_N are arranged along the gate line extension direction P2. The pixels 110R, 110_1 to 110_N, 120R, 120_1 to 120_N are arranged between the gate lines G1 and G2. The pixels 130R, 130_1 to 130_N, 140R, 140_1 to 140_N are arranged between the gate lines G2 and G3. In this embodiment, the readout circuit 101 is electrically connected to the background line R1 and the data lines D1_1 to D1_N, and reads the detection data of the pixels 110R, 110_1 to 110_N, 130R, 130_1 to 130_N via the background line R1 and the data lines D1_1 to D1_N. The readout circuit 102 is electrically connected to the background line R2 and the data lines D2_1 to D2_N, and reads the detection data of the pixels 120R, 120_1 to 120_N, 140R, 140_1 to 140_N via the background line R2 and the data lines D2_1 to D2_N.

在本实施例中,像素110R、110_1~110_N、120R、120_1~120_N分别包括开关111R、111_1~111_N、121R、121_1~121_N,并且开关111R、111_1~111_N、121R、121_1~121_N电性连接栅极线G1。像素130R、130_1~130_N、140R、140_1~140_N分别包括开关131R、131_1~131_N、141R、141_1~141_N,并且开关131R、131_1~131_N、141R、141_1~141_N电性连接栅极线G2。栅极线G3用于电性连接沿着栅极线延伸方向P2排列的下一行的多个像素(未图示)。开关111R、111_1~111_N、121R、121_1~121_N、131R、131_1~131_N、141R、141_1~141_N可分别包括一个或多个N型或P型晶体管所组成的切换电路,而本公开并不加以限制。像素110_1~110_N、120_1~120_N、130_1~130_N、140_1~140_N还分别包括光电二极管(Photodiode)112_1~112_N、122_1~122_N、132_1~132_N、142_1~142_N。In this embodiment, the pixels 110R, 110_1 to 110_N, 120R, 120_1 to 120_N include switches 111R, 111_1 to 111_N, 121R, 121_1 to 121_N, respectively, and the switches 111R, 111_1 to 111_N, 121R, 121_1 to 121_N are electrically connected to the gate line G1. The pixels 130R, 130_1 to 130_N, 140R, 140_1 to 140_N include switches 131R, 131_1 to 131_N, 141R, 141_1 to 141_N, respectively, and the switches 131R, 131_1 to 131_N, 141R, 141_1 to 141_N are electrically connected to the gate line G2. The gate line G3 is used to electrically connect a plurality of pixels (not shown) in the next row arranged along the gate line extension direction P2. The switches 111R, 111_1 to 111_N, 121R, 121_1 to 121_N, 131R, 131_1 to 131_N, 141R, 141_1 to 141_N may respectively include a switching circuit composed of one or more N-type or P-type transistors, and the present disclosure is not limited thereto. The pixels 110_1 to 110_N, 120_1 to 120_N, 130_1 to 130_N, 140_1 to 140_N further include photodiodes 112_1 to 112_N, 122_1 to 122_N, 132_1 to 132_N, 142_1 to 142_N, respectively.

值得注意的是,上述的光电二极管能够根据使用方式来将光转换成电流、电压或者电容信号的光检测装置,并且当光电二极管检测到光之后可通过数据线将电流、电压或者电容信号提供给读出电路101、102来进行相关信号判读。在本实施例中,光电二极管112_1~112_N、122_1~122_N、132_1~132_N、142_1~142_N分别电性连接开关111_1~111_N、121_1~121_N、131_1~131_N、141_1~141_N,以及电性连接偏压线BL,其中偏压线BL用以提供工作电压至光电二极管112_1~112_N、122_1~122_N、132_1~132_N、142_1~142_N。It is worth noting that the above-mentioned photodiode can be a light detection device that converts light into current, voltage or capacitance signal according to the usage mode, and after the photodiode detects light, the current, voltage or capacitance signal can be provided to the readout circuit 101, 102 through the data line for related signal judgment. In this embodiment, the photodiodes 112_1~112_N, 122_1~122_N, 132_1~132_N, 142_1~142_N are electrically connected to the switches 111_1~111_N, 121_1~121_N, 131_1~131_N, 141_1~141_N, and are electrically connected to the bias line BL, wherein the bias line BL is used to provide an operating voltage to the photodiodes 112_1~112_N, 122_1~122_N, 132_1~132_N, 142_1~142_N.

从另一角度而言,多个像素如像素110R、130R沿着数据线延伸方向P1排列为第一排,多个像素如像素110_1、130_1沿着数据线延伸方向P1排列为第二排,并且多个像素如像素110_2、130_2沿着数据线延伸方向P1排列为第三排。在其他实施例,数据线可能为直线或大部分为直线或者非直线(例如波浪状等),本公开不以此为限。对此,无论数据线为直线或大部分为直线或者非直线均沿着一数据线延伸方向P1而延伸。在本实施例中,所述第一排的所述多个像素的每一个包括如像素110R、130R的开关111R、131R,并且所述第一排的多个像素的每一个包括如像素110R、130R不包括光电二极管,而像素110_1、130_1、110_2、130_2的每一个包括光电二极管112_1、132_1、112_2、132_2,即像素110_1、130_1、110_2、130_2的每一个相较于像素110R、130R包括分别与开关111_1、131_1、111_2、131_2电性连接的光电二极管112_1、132_1、112_2、132_2。开关111R、131R电性连接背景线R1。From another perspective, a plurality of pixels such as pixels 110R and 130R are arranged in a first row along the data line extension direction P1, a plurality of pixels such as pixels 110_1 and 130_1 are arranged in a second row along the data line extension direction P1, and a plurality of pixels such as pixels 110_2 and 130_2 are arranged in a third row along the data line extension direction P1. In other embodiments, the data line may be a straight line or a mostly straight line or a non-straight line (e.g., a wavy shape, etc.), and the present disclosure is not limited thereto. In this regard, whether the data line is a straight line or a mostly straight line or a non-straight line, it extends along a data line extension direction P1. In this embodiment, each of the plurality of pixels in the first row includes switches 111R, 131R such as pixels 110R, 130R, and each of the plurality of pixels in the first row includes pixels 110R, 130R without photodiodes, while each of pixels 110_1, 130_1, 110_2, 130_2 includes photodiodes 112_1, 132_1, 112_2, 132_2, that is, each of pixels 110_1, 130_1, 110_2, 130_2 includes photodiodes 112_1, 132_1, 112_2, 132_2 electrically connected to switches 111_1, 131_1, 111_2, 131_2, respectively, compared to pixels 110R, 130R. Switches 111R, 131R are electrically connected to background line R1.

在本实施例中,所述第二排的所述多个像素的每一个包括如像素110_1、130_1的开关111_1、131_1以及光电二极管112_1、132_1。开关111_1电性连接栅极线G1、数据线D1_1以及光电二极管112_1,并且光电二极管112_1亦电性连接偏压线BL。开关131_1电性连接栅极线G2、数据线D1_1以及光电二极管132_1,并且光电二极管132_1亦电性连接偏压线BL。In this embodiment, each of the plurality of pixels in the second row includes switches 111_1, 131_1 and photodiodes 112_1, 132_1, such as pixels 110_1, 130_1. The switch 111_1 is electrically connected to the gate line G1, the data line D1_1 and the photodiode 112_1, and the photodiode 112_1 is also electrically connected to the bias line BL. The switch 131_1 is electrically connected to the gate line G2, the data line D1_1 and the photodiode 132_1, and the photodiode 132_1 is also electrically connected to the bias line BL.

在本实施例中,所述第三排的所述多个像素的每一个包括如像素110_2、130_2的开关111_2、131_2以及光电二极管112_2、132_2。开关111_2电性连接栅极线G1、数据线D1_2以及光电二极管112_2,并且光电二极管112_2亦电性连接偏压线BL。开关131_2电性连接栅极线G2、数据线D1_2以及光电二极管132_2,并且光电二极管132_2亦电性连接偏压线BL。数据线D1_2邻近于数据线D1_1并远离背景线R1。值得注意的是,所谓数据线D1_2邻近于数据线D1_1是指在数据线D1_2与数据线D1_2两者之间不存在其他数据线或背景线。In this embodiment, each of the plurality of pixels in the third row includes switches 111_2, 131_2 and photodiodes 112_2, 132_2, such as pixels 110_2, 130_2. The switch 111_2 is electrically connected to the gate line G1, the data line D1_2 and the photodiode 112_2, and the photodiode 112_2 is also electrically connected to the bias line BL. The switch 131_2 is electrically connected to the gate line G2, the data line D1_2 and the photodiode 132_2, and the photodiode 132_2 is also electrically connected to the bias line BL. The data line D1_2 is adjacent to the data line D1_1 and away from the background line R1. It is worth noting that the so-called data line D1_2 being adjacent to the data line D1_1 means that there is no other data line or background line between the data line D1_2 and the data line D1_2.

在本实施例中,辐射检测装置100可在辐射检测过程中通过所述第一排的所述多个像素的每一个包括如像素110R、120R、130R、140R来取得多个背景值,以分别用于校正其他对应排的像素的光电二极管的辐射检测结果。并且,在本实施例中,背景线R1与数据线D1_1的最小间距L1与数据线D1_1与数据线D1_2的最小间距L2相同。同理,背景线R2与数据线D2_1的最小间距与数据线D2_1与数据线D2_2的最小间距亦相同。换言之,辐射检测装置100可例如是从既有的像素数组布局(layout)当中移除像素110R、120R、130R、140R的光电二极管,以使像素110R、120R、130R、140R的开关111R、121R、131R、141R仅提供电路回路上的噪声信号至读出电路101、102来作为背景值。In this embodiment, the radiation detection device 100 can obtain multiple background values through each of the multiple pixels in the first row, such as pixels 110R, 120R, 130R, and 140R, during the radiation detection process, so as to be used to correct the radiation detection results of the photodiodes of the pixels in other corresponding rows. In addition, in this embodiment, the minimum spacing L1 between the background line R1 and the data line D1_1 is the same as the minimum spacing L2 between the data line D1_1 and the data line D1_2. Similarly, the minimum spacing between the background line R2 and the data line D2_1 is also the same as the minimum spacing between the data line D2_1 and the data line D2_2. In other words, the radiation detection device 100 may, for example, remove the photodiodes of pixels 110R, 120R, 130R, and 140R from an existing pixel array layout so that the switches 111R, 121R, 131R, and 141R of the pixels 110R, 120R, 130R, and 140R only provide noise signals on the circuit loop to the readout circuits 101 and 102 as background values.

值得注意的是,背景线R1、数据线D1_1以及数据线D1_2电性连接同一读出电路101,以使像素110R、110_1~110_N、130R、130_1~130_N之间具有相同或相近的电路回路的噪声。背景线R2、数据线D2_1以及数据线D2_2电性连接同一读出电路102,以使像素120R、120_1~120_N、140R、140_1~140_N之间具有相同或相近的电路回路的噪声。因此,从开关111R、131R读出的背景值适于校正像素110_1~110_N、130_1~130_N的检测结果,并且从开关121R、141R读出的背景值适于校正像素120_1~120_N、140_1~140_N的检测结果。It is worth noting that the background line R1, the data line D1_1 and the data line D1_2 are electrically connected to the same readout circuit 101, so that the pixels 110R, 110_1 to 110_N, 130R, 130_1 to 130_N have the same or similar circuit loop noise. The background line R2, the data line D2_1 and the data line D2_2 are electrically connected to the same readout circuit 102, so that the pixels 120R, 120_1 to 120_N, 140R, 140_1 to 140_N have the same or similar circuit loop noise. Therefore, the background values read out from the switches 111R and 131R are suitable for correcting the detection results of the pixels 110_1 to 110_N and 130_1 to 130_N, and the background values read out from the switches 121R and 141R are suitable for correcting the detection results of the pixels 120_1 to 120_N and 140_1 to 140_N.

此外,在一实施例中,电性连接至读出电路101的像素110_1~110_N还可包括一个或多个像素设计如像素110R来用于取得背景噪声,并且电性连接至读出电路101的像素130_1~130_N同样可包括一个或多个像素设计如像素130R来用于取得背景值。换言之,可从数据线D1_1~D1_N选择任一条或多条数据线作为背景线使用。然而,像素110_1~110_N、131_1~131_N中设计如像素110R的一个或多个像素的位置可为等距或不等距或任意选择。以三个背景线为例,第一背景线、第二背景线以及第三背景线电性连接至读出电路101。第一背景线与第二背景线的最小间距与第二背景线与该第三背景线的最小间距可为相同。或者,第一背景线与第二背景线的最小间距与第二背景线与该第三背景线的最小间距可为不相同。同理,电性连接读出电路102的像素120_1~120_N、140_1~140_N可依据不同使用需求或设计,而与电性连接读出电路101的像素110_1~110_N、130_1~130_N为相同、相似或不同的电路布局方式。In addition, in one embodiment, the pixels 110_1 to 110_N electrically connected to the readout circuit 101 may also include one or more pixel designs such as pixel 110R for obtaining background noise, and the pixels 130_1 to 130_N electrically connected to the readout circuit 101 may also include one or more pixel designs such as pixel 130R for obtaining background values. In other words, any one or more data lines may be selected from the data lines D1_1 to D1_N for use as background lines. However, the positions of one or more pixels designed as pixel 110R in the pixels 110_1 to 110_N, 131_1 to 131_N may be equidistant or unequally spaced or arbitrarily selected. Taking three background lines as an example, the first background line, the second background line, and the third background line are electrically connected to the readout circuit 101. The minimum spacing between the first background line and the second background line may be the same as the minimum spacing between the second background line and the third background line. Alternatively, the minimum spacing between the first background line and the second background line may be different from the minimum spacing between the second background line and the third background line. Similarly, the pixels 120_1 ˜ 120_N, 140_1 ˜ 140_N electrically connected to the readout circuit 102 may have the same, similar or different circuit layout as the pixels 110_1 ˜ 110_N, 130_1 ˜ 130_N electrically connected to the readout circuit 101 according to different usage requirements or designs.

另外,辐射检测装置100可包括显示设备、天线装置、感测装置或拼接装置,但不以此为限。辐射检测装置100可为可弯折或可挠式电子装置。辐射检测装置100可例如包括液晶(liquid crystal)发光二极管。发光二极管可例如包括有机发光二极管(organic lightemitting diode,OLED)、次毫米发光二极管(mini LED)、微发光二极管(micro LED)或量子点发光二极管(quantum dot LED,QDLED),荧光(fluorescence)、磷光(phosphor)或其他适合的材且其材料可任意排列组合,但不以此为限。天线装置可例如是液晶天线,但不以此为限。拼接装置可例如是显示器拼接装置或天线拼接装置,但不以此为限。需注意的是,辐射检测装置100可为前述的任意排列组合,但不以此为限。In addition, the radiation detection device 100 may include a display device, an antenna device, a sensing device or a splicing device, but is not limited thereto. The radiation detection device 100 may be a bendable or flexible electronic device. The radiation detection device 100 may, for example, include a liquid crystal light emitting diode. The light emitting diode may, for example, include an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED or a quantum dot light emitting diode (QDLED), fluorescence, phosphorescence or other suitable materials and their materials may be arranged and combined in any manner, but are not limited thereto. The antenna device may, for example, be a liquid crystal antenna, but is not limited thereto. The splicing device may, for example, be a display splicing device or an antenna splicing device, but is not limited thereto. It should be noted that the radiation detection device 100 may be any arrangement and combination of the aforementioned, but is not limited thereto.

图2是依照本公开的一些实施例中的辐射检测装置的电路示意图。参考图2,辐射检测装置200包括检测面板200P。检测面板200P包括像素数组,并且图2为呈现检测面板200P的所述像素数组的一部分。在本实施例中,检测面板200P包括读出电路201、202,并且包括栅极线G1、G2、G3、偏压线BL、背景线R1、R2、数据线D1_1~D1_N、D2_1~D2_N以及像素210R、210_1~210_N、220R、220_1~220_N、230R、230_1~230_N、240R、240_1~240_N,其中N为正整数。像素210R、210_1~210_N、220R、220_1~220_N沿着栅极线延伸方向P2排列,且设置在栅极线G1、G2之间。像素230R、230_1~230_N、240R、240_1~240_N沿着栅极线延伸方向P2排列,且设置在栅极线G2、G3之间。在本实施例中,读出电路201电性连接背景线R1、数据线D1_1~D1_N,并且经由背景线R1、数据线D1_1~D1_N来读出像素210R、210_1~210_N、230R、230_1~230_N的检测数据。读出电路202电性连接背景线R2、数据线D2_1~D2_N,并且经由背景线R2、数据线D2_1~D2_N来读出像素220R、220_1~220_N、240R、240_1~240_N的检测数据。FIG2 is a circuit diagram of a radiation detection device in some embodiments of the present disclosure. Referring to FIG2 , the radiation detection device 200 includes a detection panel 200P. The detection panel 200P includes a pixel array, and FIG2 presents a portion of the pixel array of the detection panel 200P. In the present embodiment, the detection panel 200P includes a readout circuit 201, 202, and includes gate lines G1, G2, G3, bias lines BL, background lines R1, R2, data lines D1_1~D1_N, D2_1~D2_N and pixels 210R, 210_1~210_N, 220R, 220_1~220_N, 230R, 230_1~230_N, 240R, 240_1~240_N, where N is a positive integer. The pixels 210R, 210_1 to 210_N, 220R, 220_1 to 220_N are arranged along the gate line extension direction P2 and are disposed between the gate lines G1 and G2. The pixels 230R, 230_1 to 230_N, 240R, 240_1 to 240_N are arranged along the gate line extension direction P2 and are disposed between the gate lines G2 and G3. In this embodiment, the readout circuit 201 is electrically connected to the background line R1 and the data lines D1_1 to D1_N, and the detection data of the pixels 210R, 210_1 to 210_N, 230R, 230_1 to 230_N are read out through the background line R1 and the data lines D1_1 to D1_N. The readout circuit 202 is electrically connected to the background line R2 and the data lines D2_1 ˜ D2_N, and reads out the detection data of the pixels 220R, 220_1 ˜ 220_N, 240R, and 240_1 ˜ 240_N via the background line R2 and the data lines D2_1 ˜ D2_N.

在本实施例中,像素210R、210_1~210_N、220R、220_1~220_N、230R、230_1~230_N、240R、240_1~240_N分别包括开关211R、211_1~211_N、221R、221_1~221_N、231R、231_1~231_N、241R、241_1~241_N。开关211R、211_1~211_N、221R、221_1~221_N电性连接栅极线G1。开关231R、231_1~231_N、241R、241_1~241_N电性连接栅极线G2。栅极线G3用于电性连接沿着栅极线延伸方向P2排列的下一行的多个像素(未图示)。开关211R、211_1~211_N、221R、221_1~221_N、231R、231_1~231_N、241R、241_1~241_N可分别包括一个或多个N型或P型晶体管所组成的切换电路,而本公开并不加以限制。像素210_1~210_N、220_1~220_N、230_1~230_N、240_1~240_N还分别包括光电二极管212_1~212_N、222_1~222_N、232_1~232_N、242_1~242_N,并且光电二极管212_1~212_N、222_1~222_N、232_1~232_N、242_1~242_N分别电性连接开关211_1~211_N、221_1~221_N、231_1~231_N、241_1~241_N,以及电性连接偏压线BL,其中偏压线BL用以提供工作电压至光电二极管212_1~212_N、222_1~222_N、232_1~232_N、242_1~242_N。In the present embodiment, the pixels 210R, 210_1 to 210_N, 220R, 220_1 to 220_N, 230R, 230_1 to 230_N, 240R, 240_1 to 240_N respectively include switches 211R, 211_1 to 211_N, 221R, 221_1 to 221_N, 231R, 231_1 to 231_N, 241R, 241_1 to 241_N. The switches 211R, 211_1 to 211_N, 221R, 221_1 to 221_N are electrically connected to the gate line G1. The switches 231R, 231_1 to 231_N, 241R, 241_1 to 241_N are electrically connected to the gate line G2. The gate line G3 is used to electrically connect a plurality of pixels (not shown) in the next row arranged along the gate line extension direction P2. The switches 211R, 211_1 to 211_N, 221R, 221_1 to 221_N, 231R, 231_1 to 231_N, 241R, 241_1 to 241_N may respectively include a switching circuit composed of one or more N-type or P-type transistors, but the present disclosure is not limited thereto. The pixels 210_1 to 210_N, 220_1 to 220_N, 230_1 to 230_N, and 240_1 to 240_N further include photodiodes 212_1 to 212_N, 222_1 to 222_N, 232_1 to 232_N, and 242_1 to 242_N, respectively. , 242_1 - 242_N are electrically connected to the switches 211_1 - 211_N, 221_1 - 221_N, 231_1 - 231_N, 241_1 - 241_N, and are electrically connected to a bias line BL, wherein the bias line BL is used to provide an operating voltage to the photodiodes 212_1 - 212_N, 222_1 - 222_N, 232_1 - 232_N, 242_1 - 242_N.

从另一角度而言,多个像素如像素210R、230R沿着数据线延伸方向P1排列为第一排,多个像素如像素210_1、230_1沿着数据线延伸方向P1排列为第二排,并且多个像素如像素210_2、230_2沿着数据线延伸方向P1排列为第三排。在本实施例中,所述第一排的所述多个像素的每一个包括如像素210R、230R的开关211R、231R,并且所述第一排的多个像素的每一个包括如像素210R、230R不包括光电二极管。开关211R电性连接栅极线G1以及背景线R1。开关231R电性连接栅极线G2以及背景线R1。在本实施例中,所述第二排的所述多个像素的每一个包括如像素210_1、230_1的开关211_1、231_1以及光电二极管212_1、232_1。开关211_1电性连接栅极线G1、数据线D1_1以及光电二极管212_1,并且光电二极管212_1亦电性连接偏压线BL。开关231_1电性连接栅极线G2、数据线D1_1以及光电二极管232_1,并且光电二极管232_1亦电性连接偏压线BL。在本实施例中,所述第三排的所述多个像素的每一个包括如像素210_2、230_2的开关211_2、231_2以及光电二极管212_2、221_2。开关211_2电性连接栅极线G1、数据线D1_2以及光电二极管212_2,并且光电二极管212_2亦电性连接偏压线BL。开关231_2电性连接栅极线G2、数据线D1_2以及光电二极管232_2,并且光电二极管232_2亦电性连接偏压线BL,其中数据线D1_2邻近于数据线D1_1并远离背景线R1。From another perspective, a plurality of pixels such as pixels 210R and 230R are arranged in a first row along the data line extension direction P1, a plurality of pixels such as pixels 210_1 and 230_1 are arranged in a second row along the data line extension direction P1, and a plurality of pixels such as pixels 210_2 and 230_2 are arranged in a third row along the data line extension direction P1. In the present embodiment, each of the plurality of pixels in the first row includes switches 211R and 231R such as pixels 210R and 230R, and each of the plurality of pixels in the first row includes switches 211R and 231R such as pixels 210R and 230R but does not include a photodiode. The switch 211R is electrically connected to the gate line G1 and the background line R1. The switch 231R is electrically connected to the gate line G2 and the background line R1. In the present embodiment, each of the plurality of pixels in the second row includes switches 211_1 and 231_1 and photodiodes 212_1 and 232_1 such as pixels 210_1 and 230_1. The switch 211_1 is electrically connected to the gate line G1, the data line D1_1 and the photodiode 212_1, and the photodiode 212_1 is also electrically connected to the bias line BL. The switch 231_1 is electrically connected to the gate line G2, the data line D1_1 and the photodiode 232_1, and the photodiode 232_1 is also electrically connected to the bias line BL. In the present embodiment, each of the plurality of pixels in the third row includes switches 211_2, 231_2 and photodiodes 212_2, 221_2 such as pixels 210_2, 230_2. The switch 211_2 is electrically connected to the gate line G1, the data line D1_2 and the photodiode 212_2, and the photodiode 212_2 is also electrically connected to the bias line BL. The switch 231_2 is electrically connected to the gate line G2 , the data line D1_2 and the photodiode 232_2 , and the photodiode 232_2 is also electrically connected to the bias line BL, wherein the data line D1_2 is adjacent to the data line D1_1 and away from the background line R1 .

在本实施例中,辐射检测装置200可在辐射检测过程中通过所述第一排的所述多个像素的每一个包括如像素210R、220R、230R、240R来取得多个背景值,以分别校正其他对应像素的光电二极管的辐射检测结果。并且,在本实施例中,背景线R1与数据线D1_1的最小间距L1’与数据线D1_1与数据线D1_2的最小间距L2’不同。同理,背景线R2与数据线D2_1的最小间距与数据线D2_1与数据线D2_2的最小间距亦不同。在本实施例中,数据线D1_1与数据线D1_2的最小间距L2’与背景线R1与数据线D1_1的最小间距的比值例如是大于6,但本公开并不限于此。换言之,在一实施例中,辐射检测装置200可例如是更改既有的像素数组布局,以移除像素210R、220R、230R、240R的光电二极管,以使像素210R、220R、230R、240R的开关211R、212R、231R、242R仅提供电路回路上的噪声信号至读出电路201、202来作为背景值。并且,辐射检测装置200可将开关211R、221R、231R、241R配置转向(例如90度)而减少开关211R、221R、231R、241R在栅极线延伸方向P2上的布局宽度,因此可有效降低在检测面板200P中未用于检测辐射的像素面积。In the present embodiment, the radiation detection device 200 can obtain multiple background values through each of the multiple pixels in the first row, such as pixels 210R, 220R, 230R, and 240R, during the radiation detection process to respectively correct the radiation detection results of the photodiodes of other corresponding pixels. In addition, in the present embodiment, the minimum spacing L1' between the background line R1 and the data line D1_1 is different from the minimum spacing L2' between the data line D1_1 and the data line D1_2. Similarly, the minimum spacing between the background line R2 and the data line D2_1 is also different from the minimum spacing between the data line D2_1 and the data line D2_2. In the present embodiment, the ratio of the minimum spacing L2' between the data line D1_1 and the data line D1_2 to the minimum spacing between the background line R1 and the data line D1_1 is, for example, greater than 6, but the present disclosure is not limited thereto. In other words, in one embodiment, the radiation detection device 200 may, for example, modify the existing pixel array layout to remove the photodiodes of the pixels 210R, 220R, 230R, 240R, so that the switches 211R, 212R, 231R, 242R of the pixels 210R, 220R, 230R, 240R only provide the noise signal on the circuit loop to the readout circuits 201, 202 as background values. In addition, the radiation detection device 200 may turn the configuration of the switches 211R, 221R, 231R, 241R (for example, 90 degrees) to reduce the layout width of the switches 211R, 221R, 231R, 241R in the gate line extension direction P2, thereby effectively reducing the pixel area not used for detecting radiation in the detection panel 200P.

值得注意的是,背景线R1、数据线D1_1~D1_N电性连接同一读出电路201,以使像素210R、210_1~210_N、230R、230_1~230_N之间具有相同或相近的电路回路的噪声。背景线R2、数据线D2_1~D2_N电性连接同一读出电路202,以使像素220R、220_1~220_N、240R、240_1~240_N之间具有相同或相近的电路回路的噪声。因此,从开关211R、231R读出的背景值适于校正像素210_1~210_N、230_1~230_N的检测结果,并且从开关221R、241R读出的背景值适于校正像素220_1~220_N、240_1~240_N的检测结果。It is worth noting that the background line R1 and the data lines D1_1 to D1_N are electrically connected to the same readout circuit 201, so that the pixels 210R, 210_1 to 210_N, 230R, 230_1 to 230_N have the same or similar circuit loop noise. The background line R2 and the data lines D2_1 to D2_N are electrically connected to the same readout circuit 202, so that the pixels 220R, 220_1 to 220_N, 240R, 240_1 to 240_N have the same or similar circuit loop noise. Therefore, the background value read out from the switches 211R and 231R is suitable for correcting the detection results of the pixels 210_1 to 210_N, 230_1 to 230_N, and the background value read out from the switches 221R and 241R is suitable for correcting the detection results of the pixels 220_1 to 220_N, 240_1 to 240_N.

此外,在一实施例中,电性连接至读出电路201的像素210_1~210_N还可包括一个或多个像素设计如像素210R来用于取得背景噪声,并且电性连接至读出电路201的像素230_1~230_N同样可包括一个或多个像素设计如像素230R来用于取得背景噪声。换言之,可从数据线D1_1~D1_N选择任一条或多条数据线作为背景线使用。然而,像素210_1~210_N、230_1~230_N中设计如像素210R、230R的一个或多个像素的位置可为等距或不等距或任意选择。以三个背景线为例,第一背景线、第二背景线以及第三背景线电性连接至读出电路201。第一背景线与第二背景线的最小间距与第二背景线与该第三背景线的最小间距可为相同。或者,第一背景线与第二背景线的最小间距与第二背景线与该第三背景线的最小间距可为不相同。同理,电性连接读出电路202的像素220_1~220_N、240_1~240_N可依据不同使用需求或设计,而与电性连接读出电路201的像素210_1~210_N、230_1~230_N为相同、相似或不同的电路布局方式。In addition, in one embodiment, the pixels 210_1 to 210_N electrically connected to the readout circuit 201 may also include one or more pixel designs such as pixel 210R for obtaining background noise, and the pixels 230_1 to 230_N electrically connected to the readout circuit 201 may also include one or more pixel designs such as pixel 230R for obtaining background noise. In other words, any one or more data lines can be selected from the data lines D1_1 to D1_N for use as background lines. However, the positions of one or more pixels designed as pixels 210R, 230R in the pixels 210_1 to 210_N, 230_1 to 230_N may be equidistant or unequally spaced or arbitrarily selected. Taking three background lines as an example, the first background line, the second background line, and the third background line are electrically connected to the readout circuit 201. The minimum spacing between the first background line and the second background line may be the same as the minimum spacing between the second background line and the third background line. Alternatively, the minimum spacing between the first background line and the second background line may be different from the minimum spacing between the second background line and the third background line. Similarly, the pixels 220_1-220_N, 240_1-240_N electrically connected to the readout circuit 202 may have the same, similar or different circuit layout as the pixels 210_1-210_N, 230_1-230_N electrically connected to the readout circuit 201 according to different usage requirements or designs.

图3是依照本公开的一实施例的像素电路示意图。参考图3,图3用于说明一个像素310R与偏压线BL电性绝缘的方式。在本实施例中,像素310R设置于数据线D1_1、D1_2之间,以与门极线G1、G2之间。像素310R包括开关311R以及光电二极管312。开关311R的控制端电性连接栅极线G1。开关311R的第一端电性连接数据线D1_1,并且开关311R的第二端电性连接光电二极管312的一端。在本实施例中,像素310R与偏压线BL电性绝缘。如图3所示,像素310R与偏压线BL电性绝缘的方式是通过将主动区当中的光电二极管312与偏压支线BLS之间形成断路的方式来使光电二极管312因无法接收偏压而禁能。因此,像素310R的开关311R被导通后,可提供电路回路的背景噪声。然而,在一实施例中,像素310R与偏压线BL电性绝缘的方式亦可通过直接截断外围区的偏压线BL,以使光电二极管312无法接收偏压而禁能。FIG. 3 is a schematic diagram of a pixel circuit according to an embodiment of the present disclosure. Referring to FIG. 3 , FIG. 3 is used to illustrate a method of electrically isolating a pixel 310R from a bias line BL. In the present embodiment, the pixel 310R is disposed between the data lines D1_1 and D1_2, and between the gate lines G1 and G2. The pixel 310R includes a switch 311R and a photodiode 312. The control end of the switch 311R is electrically connected to the gate line G1. The first end of the switch 311R is electrically connected to the data line D1_1, and the second end of the switch 311R is electrically connected to one end of the photodiode 312. In the present embodiment, the pixel 310R is electrically insulated from the bias line BL. As shown in FIG. 3 , the method of electrically isolating the pixel 310R from the bias line BL is to disable the photodiode 312 because it cannot receive the bias by forming a circuit break between the photodiode 312 in the active region and the bias branch line BLS. Therefore, after the switch 311R of the pixel 310R is turned on, background noise of the circuit loop can be provided. However, in one embodiment, the pixel 310R and the bias line BL may be electrically insulated by directly cutting off the bias line BL in the peripheral region, so that the photodiode 312 cannot receive the bias and is disabled.

图4是依照本公开的一些实施例中的辐射检测装置的电路示意图。参考图4,辐射检测装置400包括检测面板400P。检测面板400P包括像素数组,并且图4为检测面板400P的所述像素数组的一部分。在本实施例中,检测面板400P包括读出电路401、402,并且包括栅极线G1、栅极线G2、栅极线G3、偏压线BL、数据线D1_1~D1_M、D2_1~D2_M以及像素410_1~410_M、420_1~420_M、430_1~430_M、440_1~440_M,其中M为正整数。像素410_1~410_M、420_1~420_M沿着栅极线延伸方向P2排列,且设置在栅极线G1、G2之间。像素430_1~430_M、440_1~440_M沿着栅极线延伸方向P2排列,且设置在栅极线G2、G3之间。在本实施例中,读出电路401电性连接数据线D1_1~D1_M,并且用以经由数据线D1_1~D1_M来读出像素410_1~410_M、430_1~430_M的检测数据。读出电路402电性连接数据线D2_1~D2_M,并且用以经由数据线D2_1~D2_M来读出像素420_1~420_M、440_1~440_M的检测数据。FIG4 is a circuit diagram of a radiation detection device in some embodiments of the present disclosure. Referring to FIG4 , the radiation detection device 400 includes a detection panel 400P. The detection panel 400P includes a pixel array, and FIG4 is a portion of the pixel array of the detection panel 400P. In the present embodiment, the detection panel 400P includes readout circuits 401 and 402, and includes gate lines G1, gate lines G2, gate lines G3, bias lines BL, data lines D1_1 to D1_M, D2_1 to D2_M, and pixels 410_1 to 410_M, 420_1 to 420_M, 430_1 to 430_M, 440_1 to 440_M, where M is a positive integer. The pixels 410_1 to 410_M, 420_1 to 420_M are arranged along the gate line extension direction P2 and are arranged between the gate lines G1 and G2. The pixels 430_1-430_M and 440_1-440_M are arranged along the gate line extension direction P2 and are disposed between the gate lines G2 and G3. In this embodiment, the readout circuit 401 is electrically connected to the data lines D1_1-D1_M and is used to read out the detection data of the pixels 410_1-410_M and 430_1-430_M via the data lines D1_1-D1_M. The readout circuit 402 is electrically connected to the data lines D2_1-D2_M and is used to read out the detection data of the pixels 420_1-420_M and 440_1-440_M via the data lines D2_1-D2_M.

在本实施例中,像素410_1~410_M、420_1~420_M、430_1~430_M、440_1~440_M分别包括开关411_1~411_M、421_1~421_M、431_1~431_M、441_1~441_M。开关411_1~411_M、421_1~421_M电性连接栅极线G1。开关431_1~431_M、441_1~441_M电性连接栅极线G2。栅极线G3用于电性连接沿着栅极线延伸方向P2排列的下一行的多个像素。开关411_1~411_M、421_1~421_M、431_1~431_M、441_1~441_M可分别包括一个或多个N型或P型晶体管所组成的切换电路,而本公开并不加以限制。像素410_1~410_M、420_1~420_M、430_1~430_M、440_1~440_M还分别包括光电二极管412_1~412_M、422_1~422_M、432_1~432_M、442_1~442_M。光电二极管412_1~412_M、422_1~422_M、432_1~432_M、442_1~442_M分别电性连接开关411_1~411_M、421_1~421_M、431_1~431_M、441_1~441_M。In this embodiment, pixels 410_1-410_M, 420_1-420_M, 430_1-430_M, 440_1-440_M respectively include switches 411_1-411_M, 421_1-421_M, 431_1-431_M, 441_1-441_M. Switches 411_1-411_M, 421_1-421_M are electrically connected to gate line G1. Switches 431_1-431_M, 441_1-441_M are electrically connected to gate line G2. Gate line G3 is used to electrically connect a plurality of pixels in the next row arranged along gate line extension direction P2. The switches 411_1-411_M, 421_1-421_M, 431_1-431_M, 441_1-441_M may include switching circuits composed of one or more N-type or P-type transistors, respectively, but the present disclosure is not limited thereto. The pixels 410_1-410_M, 420_1-420_M, 430_1-430_M, 440_1-440_M further include photodiodes 412_1-412_M, 422_1-422_M, 432_1-432_M, 442_1-442_M, respectively. The photodiodes 412_1 - 412_M, 422_1 - 422_M, 432_1 - 432_M, and 442_1 - 442_M are electrically connected to the switches 411_1 - 411_M, 421_1 - 421_M, 431_1 - 431_M, and 441_1 - 441_M, respectively.

在本实施例中,光电二极管412_M、422_M、432_M、442_M并未电性连接偏压线BL,而其他光电二极管则电性连接偏压线BL,但本公开并不限于此。在一实施例中,光电二极管412_1~412_M的至少其中之一、光电二极管422_1~422_M的至少其中之一、光电二极管432_1~432_M的至少其中之一以及光电二极管442_1~442_M的至少其中之一可未电性连接偏压线BL,而其他光电二极管则电性连接偏压线BL。偏压线BL用以提供工作电压至其他光电二极管。换言之,本实施例的像素410_1~410_M的至少其中之一、像素420_1~420_M的至少其中之一、像素430_1~430_M的至少其中之一以及像素440_1~440_M的至少其中之一可与偏压线电性绝缘,以提供背景噪声。然而,有关于像素410_1~410_M的至少其中之一、像素420_1~420_M的至少其中之一、像素430_1~430_M的至少其中之一以及像素440_1~440_M的至少其中之一与偏压线电性绝缘的方式可参照上述图3实施例所提供的将主动区中的偏压支线BLS形成断路的方式或在外围区将偏压线BL截断的方式,因此在此不再赘述。In this embodiment, the photodiodes 412_M, 422_M, 432_M, and 442_M are not electrically connected to the bias line BL, while the other photodiodes are electrically connected to the bias line BL, but the disclosure is not limited thereto. In one embodiment, at least one of the photodiodes 412_1 to 412_M, at least one of the photodiodes 422_1 to 422_M, at least one of the photodiodes 432_1 to 432_M, and at least one of the photodiodes 442_1 to 442_M may not be electrically connected to the bias line BL, while the other photodiodes are electrically connected to the bias line BL. The bias line BL is used to provide an operating voltage to the other photodiodes. In other words, at least one of the pixels 410_1-410_M, at least one of the pixels 420_1-420_M, at least one of the pixels 430_1-430_M, and at least one of the pixels 440_1-440_M of the present embodiment can be electrically insulated from the bias line to provide background noise. However, the method of electrically insulating at least one of the pixels 410_1-410_M, at least one of the pixels 420_1-420_M, at least one of the pixels 430_1-430_M, and at least one of the pixels 440_1-440_M from the bias line can refer to the method of disconnecting the bias branch line BLS in the active region or the method of cutting off the bias line BL in the peripheral region provided in the embodiment of FIG. 3, and thus will not be described in detail here.

从另一角度而言,多个像素如像素410_M、430_M沿着数据线延伸方向P1排列为第一排,多个像素如像素410_1、430_1沿着数据线延伸方向P1排列为第二排。在本实施例中,所述第一排的所述多个像素的每一个包括如像素410_M的开关411_M以及光电二极管412_M。开关411_M电性连接栅极线G1以及数据线D1_M以及光电二极管412_M。像素410_M与偏压线BL电性绝缘。在本实施例中,所述第二排的所述多个像素的每一个包括如像素410_1的开关411_1以及光电二极管412_1。开关411_1电性连接栅极线G1、数据线D1_1以及光电二极管412_1,并且光电二极管412_1亦电性连接偏压线BL。像素410_1与偏压线BL电性连接。From another perspective, a plurality of pixels such as pixels 410_M and 430_M are arranged in a first row along the data line extension direction P1, and a plurality of pixels such as pixels 410_1 and 430_1 are arranged in a second row along the data line extension direction P1. In the present embodiment, each of the plurality of pixels in the first row includes a switch 411_M and a photodiode 412_M such as pixel 410_M. The switch 411_M is electrically connected to the gate line G1, the data line D1_M and the photodiode 412_M. The pixel 410_M is electrically insulated from the bias line BL. In the present embodiment, each of the plurality of pixels in the second row includes a switch 411_1 and a photodiode 412_1 such as pixel 410_1. The switch 411_1 is electrically connected to the gate line G1, the data line D1_1 and the photodiode 412_1, and the photodiode 412_1 is also electrically connected to the bias line BL. The pixel 410_1 is electrically connected to the bias line BL.

在本实施例中,辐射检测装置400可在辐射检测过程中通过所述第一排的所述多个像素的每一个包括如像素410_M、430_M来取得多个背景值,以分别用于校正其他对应像素的光电二极管的辐射检测结果。对此,数据线D1_M可作为背景线。换言之,辐射检测装置400可例如是不更改既有的像素数组布局,以将像素410_M、430_M与偏压线BL之间的走线截断或形成断路的方式来使像素410_M、430_M的开关411_M、431_M仅提供电路回路上的噪声信号至读出电路401来作为背景值。另外,在一实施例中,辐射检测装置400亦沿着数据线延伸方向P1排列可设置多排的多个像素与偏压线BL电性绝缘,或者是沿着数据线延伸方向P1排列设置一整排的多个像素与偏压线BL电性绝缘的方式来取得多个背景值,而不限上述。In this embodiment, the radiation detection device 400 can obtain multiple background values through each of the multiple pixels in the first row, such as pixels 410_M and 430_M, during the radiation detection process, so as to be used to correct the radiation detection results of the photodiodes of other corresponding pixels. In this regard, the data line D1_M can be used as a background line. In other words, the radiation detection device 400 can, for example, not change the existing pixel array layout, and cut off or open the wiring between the pixels 410_M and 430_M and the bias line BL so that the switches 411_M and 431_M of the pixels 410_M and 430_M only provide the noise signal on the circuit loop to the readout circuit 401 as the background value. In addition, in one embodiment, the radiation detection device 400 can also arrange multiple rows of multiple pixels along the data line extension direction P1 to be electrically insulated from the bias line BL, or arrange a whole row of multiple pixels along the data line extension direction P1 to be electrically insulated from the bias line BL to obtain multiple background values, but is not limited to the above.

值得注意的是,数据线D1_1~D1_M电性连接同一读出电路401,以使像素410_1~410_M、430_1~430_M之间具有相同或相近的电路回路的噪声。数据线D2_1~D2_M电性连接同一读出电路402,以使像素420_1~420_M、440_1~440_M之间具有相同或相近的电路回路的噪声。因此,从开关411_M、431_M读出的背景值适于校正像素410_1~410_M、430_1~430_M的检测结果,并且从开关421_M、441_M读出的背景值适于校正像素420_1~420_M、440_1~440_M的检测结果。It is worth noting that the data lines D1_1 to D1_M are electrically connected to the same readout circuit 401, so that the pixels 410_1 to 410_M, 430_1 to 430_M have the same or similar circuit loop noise. The data lines D2_1 to D2_M are electrically connected to the same readout circuit 402, so that the pixels 420_1 to 420_M, 440_1 to 440_M have the same or similar circuit loop noise. Therefore, the background value read out from the switches 411_M and 431_M is suitable for correcting the detection results of the pixels 410_1 to 410_M, 430_1 to 430_M, and the background value read out from the switches 421_M and 441_M is suitable for correcting the detection results of the pixels 420_1 to 420_M, 440_1 to 440_M.

此外,在一实施例中,电性连接至读出电路401的像素410_1~410_M、430_1~430_M可包括多个像素设计如像素410_M、430_M来用于取得背景噪声。换言之,数据线D1_1~D1_M可包括多条数据线是作为背景线。然而,像素410_1~410_M、430_1~430_M中设计如像素410_M、430_M的多个像素的位置可为等距或不等距或任意选择。以三个背景线为例,第一背景线、第二背景线以及第三背景线电性连接至读出电路401。第一背景线与第二背景线的最小间距与第二背景线与该第三背景线的最小间距可为相同。或者,第一背景线与第二背景线的最小间距与第二背景线与该第三背景线的最小间距可为不相同。同理,电性连接读出电路402的像素420_1~420_M、440_1~440_M可依据不同使用需求或设计,而与电性连接读出电路401的像素410_1~410_M、430_1~430_M为相同、相似或不同的电路布局方式。In addition, in one embodiment, the pixels 410_1 to 410_M, 430_1 to 430_M electrically connected to the readout circuit 401 may include a plurality of pixel designs such as pixels 410_M, 430_M for obtaining background noise. In other words, the data lines D1_1 to D1_M may include a plurality of data lines as background lines. However, the positions of the plurality of pixels designed as pixels 410_M, 430_1 to 430_M in the pixels 410_1 to 410_M, 430_1 to 430_M may be equidistant or unequally spaced or arbitrarily selected. Taking three background lines as an example, the first background line, the second background line, and the third background line are electrically connected to the readout circuit 401. The minimum spacing between the first background line and the second background line may be the same as the minimum spacing between the second background line and the third background line. Alternatively, the minimum spacing between the first background line and the second background line may be different from the minimum spacing between the second background line and the third background line. Similarly, the pixels 420_1 ˜ 420_M, 440_1 ˜ 440_M electrically connected to the readout circuit 402 may have the same, similar or different circuit layout as the pixels 410_1 ˜ 410_M, 430_1 ˜ 430_M electrically connected to the readout circuit 401 according to different usage requirements or designs.

另外,根据本公开实施例,可使用光学显微镜(optical microscopy,OM)、扫描式电子显微镜(Scanning Electron Microscope,SEM)或其它合适的方式测量各组件的间距。In addition, according to the embodiments of the present disclosure, the spacing between components may be measured using an optical microscope (OM), a scanning electron microscope (SEM) or other suitable methods.

综上所述,本公开的辐射检测装置可通过不具有光电二极管的像素来提供合适的背景噪声,或者采用将检测面板的主动区中的至少一像素的偏压支线形成断路的方式或在检测面板的外围区将偏压线截断的方式,以通过与偏压线电性绝缘的像素来提供合适的背景噪声,以有效地取得合适的背景噪声。In summary, the radiation detection device disclosed in the present invention can provide suitable background noise through pixels that do not have photodiodes, or can provide suitable background noise through pixels that are electrically insulated from the bias line by breaking the bias branch line of at least one pixel in the active area of the detection panel or by cutting off the bias line in the peripheral area of the detection panel, so as to effectively obtain suitable background noise.

最后应说明的是:以上各实施例仅用以说明本公开的技术方案,而非对其限制;尽管参照前述各实施例对本公开进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本公开各实施例技术方案的范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims (8)

1. A radiation detection device, comprising:
The detection panel comprises a plurality of data lines, a plurality of first pixels arranged in a first row, a plurality of second pixels arranged in a second row and a plurality of second pixels arranged in a third row, wherein the first row, the second row and the third row are parallel to the extending direction of the data lines,
Wherein each of the plurality of first pixels comprises a first switch and each of the plurality of second pixels and the further plurality of second pixels comprises a second switch, wherein each of the plurality of second pixels and the further plurality of second pixels comprises a photodiode and the plurality of first pixels does not comprise a photodiode,
A first background line of the plurality of data lines is electrically connected with the plurality of first pixels of the first row;
a first data line of the plurality of data lines electrically connected to the plurality of second pixels of the second row; and
A second data line of the plurality of data lines electrically connected to another of the plurality of second pixels of the third row and being adjacent to the first data line and far from the first background line,
The minimum distance between the first background line and the first data line is smaller than the minimum distance between the first data line and the second data line.
2. The radiation detection apparatus as recited in claim 1, wherein a ratio of the minimum spacing of the first data line and the second data line to the minimum spacing of the first background line and the first data line is greater than 6.
3. The radiation detection apparatus as recited in claim 1, further comprising:
A second background line of the plurality of data lines; and
And a third background line of the plurality of data lines, wherein a minimum pitch of the first background line and the second background line is the same as a minimum pitch of the second background line and the third background line.
4. The radiation detection apparatus as recited in claim 1, further comprising:
A second background line of the plurality of data lines; and
And a third background line of the plurality of data lines, wherein a minimum pitch of the first background line and the second background line is different from a minimum pitch of the second background line and the third background line.
5. The radiation detection device defined in claim 1, wherein the first background line, the first data line and the second data line are electrically connected to a same readout circuit.
6. A radiation detection device, comprising:
The detection panel comprises a plurality of data lines, a bias line, a plurality of first pixels and a plurality of second pixels,
Wherein each of the plurality of first pixels includes a switch and a photodiode, each of the plurality of second pixels includes the switch and the photodiode, and the plurality of first pixels is electrically insulated from the bias line, the plurality of second pixels is electrically connected to the bias line,
A first background line of the plurality of data lines is electrically connected to the plurality of second pixels;
a second background line of the plurality of data lines is electrically connected to another plurality of second pixels adjacent to the plurality of second pixels; and
A third background line of the plurality of data lines electrically connected to the plurality of first pixels,
Wherein a minimum pitch of the first background line and the second background line is the same as a minimum pitch of the second background line and the third background line.
7. The radiation detection apparatus as recited in claim 6, wherein the bias line comprises a bias leg and the first plurality of pixels are electrically isolated from the bias leg.
8. The radiation detecting apparatus of claim 6, wherein the first data line and the second data line are electrically connected to the same readout circuit.
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