CN113790833A - a pressure sensor - Google Patents
a pressure sensor Download PDFInfo
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- CN113790833A CN113790833A CN202111085998.6A CN202111085998A CN113790833A CN 113790833 A CN113790833 A CN 113790833A CN 202111085998 A CN202111085998 A CN 202111085998A CN 113790833 A CN113790833 A CN 113790833A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
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Abstract
The invention discloses a pressure sensor, which relates to the technical field of sensors and comprises a substrate layer and a piezoelectric stack structure arranged on the upper surface of the substrate layer, wherein a groove is arranged on the upper surface of the substrate layer, a closed first cavity is formed between the groove and the piezoelectric stack structure, a closed second cavity is also formed inside the substrate layer, the second cavity is spaced from the first cavity and is positioned below the first cavity, and the pressure intensity of the first cavity is greater than that of the second cavity. The pressure sensor provided by the invention can realize high-sensitivity and high-stability measurement and can bear larger pressure.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a pressure sensor device.
Background
Pressure sensors are one of the most widely used sensors. The method is widely applied to various industrial automatic control environments, and relates to a plurality of industries such as water conservancy and hydropower, railway transportation, intelligent buildings, production automatic control, aerospace, military industry, petrochemical industry, oil wells, electric power, ships, machine tools, pipelines and the like. At present, pressure sensors include capacitive pressure sensors, piezoelectric pressure sensors and the like.
In recent years, with the continuous development of Micro-Electro-Mechanical systems (MEMS) technology, especially the gradual maturity of MEMS technology based on aluminum nitride thin film material, piezoelectric MEMS sensors are also continuously developed. The piezoelectric MEMS sensor is a novel MEMS product, utilizes piezoelectric materials integrated on the surface of a silicon substrate to perform energy conversion, adopts a single diaphragm structure, can not be influenced by dust, water and welding flux vapor, gradually replaces the traditional capacitive sensor on high-end electronic products, and becomes the mainstream of the new-generation MEMS sensor market. Although the piezoelectric type pressure sensor is excellent in sensitivity performance, it is low in stability and can withstand a small pressure.
Disclosure of Invention
The invention aims to provide a pressure sensor which can realize high-sensitivity and high-stability measurement and can bear larger pressure.
The embodiment of the invention is realized by the following steps:
a pressure sensor comprises a substrate layer and a piezoelectric stack structure arranged on the upper surface of the substrate layer, wherein a groove is formed in the upper surface of the substrate layer, a first closed cavity is formed between the groove and the piezoelectric stack structure, a second closed cavity is further formed in the substrate layer, the second closed cavity is spaced from the first closed cavity and is located below the first closed cavity, and the pressure intensity of the first closed cavity is greater than that of the second closed cavity.
Optionally, as an implementable manner, the pressure of the first chamber is between 0 and 1 atmosphere, and the pressure of the second chamber is 0 atmosphere.
Optionally, as an implementable manner, the bottom surface of the first cavity and the top surface of the second cavity are parallel to each other.
Optionally, as an implementable manner, the first cavity and the second cavity are separated by a thin film.
Optionally, the thickness of the film is between 2-20um as a practical way.
Optionally, as an implementable manner, a projection center of the first cavity on the bottom surface of the substrate layer coincides with a projection center of the second cavity on the bottom surface of the substrate layer.
Optionally, as an implementable manner, the piezoelectric stack structure includes a bottom electrode, a piezoelectric layer, and a top electrode stacked in sequence from bottom to top, and an outer edge of the top electrode is a curve.
Optionally, as an implementable manner, the outer edge of the bottom electrode is curved.
Alternatively, as an implementable manner, the outer edges of the bottom and top electrodes are the same shape.
Optionally, as an implementable manner, the top electrode and the bottom electrode are both thin film electrodes.
The embodiment of the invention has the beneficial effects that:
the pressure sensor provided by the invention comprises a substrate layer and a piezoelectric stack structure arranged on the upper surface of the substrate layer, wherein a groove is arranged on the upper surface of the substrate layer, a closed first cavity is formed between the groove and the piezoelectric stack structure, a closed second cavity is also formed inside the substrate layer, the second cavity is spaced from the first cavity and is positioned below the first cavity, when pressure acts on the pressure sensor, the piezoelectric stack structure is correspondingly deformed under the action of the pressure, wherein the pressure of the first cavity is greater than that of the second cavity, a pressure difference exists between the first cavity and the second cavity, under the double-action of the pressure and the pressure difference, materials between the first cavity and the second cavity are correspondingly deformed downwards, the pressure value in the first cavity is reduced, and further the reaction force on the piezoelectric stack structure is reduced, so that the deformation of the piezoelectric stack structure is increased, the shift of the resonance frequency becomes large, that is, the sensitivity increases; and the second cavity buffers the pressure, so that the measurement stability and the bearable pressure range of the pressure sensor are improved. The pressure sensor provided by the invention can realize high-sensitivity and high-stability measurement and can bear larger pressure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
FIG. 1 is a schematic structural diagram of a pressure sensor according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a pressure sensor having top and bottom electrodes that are simultaneously elliptical according to an embodiment of the present invention;
FIG. 3 is a schematic view of another pressure sensor with elliptical top and bottom electrodes according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a pressure sensor with a droplet-shaped top electrode according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a pressure sensor with interdigital electrodes as the top electrode according to an embodiment of the present invention;
fig. 6 is a schematic view of another structure of the pressure sensor with the top electrode being an interdigital electrode according to the embodiment of the present invention.
Icon: 100-a pressure sensor; 110-a substrate layer; 111-a first cavity; 112-a second cavity; 113-a thin film; 120-a piezoelectric stack structure; 121-top electrode; 122-a piezoelectric layer; 123-bottom electrode.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "vertical", "horizontal", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally put in use of products of the present invention, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Pressure sensors are one of the most widely used sensors. At present, pressure sensors include capacitive pressure sensors, piezoelectric pressure sensors and the like. Compared with a piezoelectric pressure sensor, the capacitance pressure sensor has larger stability and pressure bearing range, and the piezoelectric pressure sensor has excellent sensitivity performance but smaller stability and pressure bearing. Therefore, a pressure sensor with high sensitivity, good stability and wide measurable pressure range is urgently needed at present.
The invention provides a pressure sensor 100, as shown in fig. 1, which includes a substrate layer 110 and a piezoelectric stack structure 120 disposed on an upper surface of the substrate layer 110, wherein a groove is disposed on the upper surface of the substrate layer 110, a first sealed cavity 111 is formed between the groove and the piezoelectric stack structure 120, a second sealed cavity 112 is further formed in the substrate layer 110, the second sealed cavity 112 is spaced from the first sealed cavity 111 and is located below the first sealed cavity 111, and a pressure of the first sealed cavity 111 is greater than a pressure of the second sealed cavity 112.
The piezoelectric stack structure 120 includes a bottom electrode 123, a piezoelectric layer 122 and a top electrode 121 stacked in sequence from bottom to top, where the piezoelectric layer 122 is made of a piezoelectric material and has a piezoelectric effect, and the piezoelectric effect is that when the piezoelectric material deforms under an external force in a certain direction, a polarization phenomenon occurs inside the piezoelectric material, and charges with opposite polarities appear on two opposite surfaces of the piezoelectric material, and when the external force is removed, the piezoelectric stack structure returns to an uncharged state. The pressure sensor 100 is just a device that works with the piezoelectric effect.
The specific material of the piezoelectric layer 122 is not specifically limited, and may be made of any material having a piezoelectric effect, and may be, for example, one of an AlN piezoelectric film, an Sc-doped AlN piezoelectric film, a PZT piezoelectric film, a ZnO piezoelectric film, a lithium niobate film, or a lithium tantalate film.
When the pressure sensor 100 performs pressure measurement, an external pressure is applied to the piezoelectric stack structure 120, the first cavity 111 is disposed below the piezoelectric stack structure 120, and when the external pressure is applied to the piezoelectric stack structure 120, a pressure difference is formed between two sides of the piezoelectric stack structure 120, so that the piezoelectric stack structure 120 deforms, and due to the piezoelectric effect of the piezoelectric layer 122, a polarization phenomenon occurs, and since the amount of charge generated by the polarization phenomenon is proportional to the amount of deformation generated by the piezoelectric stack structure 120 and the amount of deformation generated by the piezoelectric stack structure 120 is proportional to the applied pressure, the applied pressure can be calculated according to the amount of charge generated by polarization. However, when an external pressure is applied to the piezoelectric stack structure 120, the piezoelectric stack structure 120 applies a pressure to the first cavity 111 when deformed, and the first cavity 111, which is a closed cavity, inevitably generates a reaction force to the piezoelectric stack structure 120, so as to reduce the deformation amount of the piezoelectric stack structure 120, reduce the frequency offset of the piezoelectric stack, and reduce the sensitivity and the measurement range of the pressure sensor 100.
In the invention, the second cavity 112 is arranged in the substrate layer 110 under the first cavity 111, the pressure of the second cavity 112 is smaller than that of the first cavity 111, a pressure difference is formed between the first cavity 111 and the second cavity 112, when an external pressure is applied to the piezoelectric stack structure 120, the piezoelectric stack structure 120 deforms downward to apply the pressure to the first cavity 111, the pressure difference exists between the first cavity 111 and the second cavity 112, the material between the first cavity 111 and the second cavity 112 deforms downward, the pressure in the first cavity 111 decreases, so that the reaction force on the piezoelectric stack structure 120 decreases, the deformation of the piezoelectric stack structure 120 increases, the offset of the piezoelectric stack structure 120 increases, the sensitivity of the pressure sensor 100 increases, and the measurement range increases.
The pressure sensor 100 provided by the invention comprises a substrate layer 110 and a piezoelectric stack structure 120 arranged on the upper surface of the substrate layer 110, wherein a groove is arranged on the upper surface of the substrate layer 110, a sealed first cavity 111 is formed between the groove and the piezoelectric stack structure 120, a sealed second cavity 112 is further formed inside the substrate layer 110, the second cavity 112 is spaced from the first cavity 111 and is positioned below the first cavity 111, when pressure acts on the pressure sensor 100, the piezoelectric stack structure 120 deforms correspondingly under the action of the pressure, wherein the pressure of the first cavity 111 is greater than that of the second cavity 112, a pressure difference exists between the first cavity 111 and the second cavity 112, under the double action of the pressure and the pressure difference, a material between the first cavity 111 and the second cavity 112 deforms correspondingly downwards, the pressure value in the first cavity 111 is reduced, and further the reaction force on the piezoelectric stack structure 120 is reduced, so that the deformation of the piezoelectric stack structure 120 is increased, the shift of the resonant frequency is increased, that is, the sensitivity is increased; the buffering of the pressure by the second cavity 112 improves the measurement stability and the tolerable pressure range of the pressure sensor 100. The pressure sensor 100 provided by the invention can realize high-sensitivity and high-stability measurement and can bear larger pressure.
Optionally, the pressure of the first chamber 111 is between 0 and 1 atmosphere, and the pressure of the second chamber 112 is 0 atmosphere.
The outside of the piezoelectric stack 120 is in an external environment, the external air pressure is usually one atmosphere, the pressure of the first cavity 111 is set to be 0-1 atmosphere, and the pressure of the second cavity 112 is set to be vacuum, so that a certain pressure difference exists between the external environment and each of the first cavity 111 and the second cavity 112. When the pressure sensor 100 performs pressure measurement, an external pressure is applied to the piezoelectric stack structure 120, and under triple actions of the external pressure, a pressure difference between the external pressure and the first cavity 111, and a pressure difference between the first cavity 111 and the second cavity 112, a reaction force of the first cavity 111 to the piezoelectric stack structure 120 is reduced, deformation of the piezoelectric stack structure 120 is increased, frequency offset is increased, and then sensitivity of the pressure sensor 100 is increased, so that the characteristic of high sensitivity is realized.
In an implementation manner of the embodiment of the present invention, as shown in fig. 1, the bottom surface of the first cavity 111 and the top surface of the second cavity 112 are parallel to each other.
The bottom surface of the first cavity 111 is parallel to the top surface of the second cavity 112, and when an external pressure is applied, the piezoelectric stack 120 deforms to apply pressure to the first cavity 111, the material between the first cavity 111 and the second cavity 112 deforms to reduce the pressure inside the first cavity 111, when the material between the first cavity 111 and the second cavity 112 deforms, if the bottom surface of the first cavity 111 and the top surface of the second cavity 112 are parallel to each other, when the material between the first cavity 111 and the second cavity 112 is deformed by force, each point on the same cross section in the first cavity 111 is stressed equally, so that the reaction force of the first cavity 111 to the piezoelectric stack 120 is balanced at various points of the piezoelectric stack 120, avoiding the reaction force at a certain position in the piezoelectric stack 120 being large, and the reaction force is small in the rest of the area, so that the piezo-electric stack structure 120 is stressed unevenly, which results in inaccurate measurement results.
It should be noted that the specific shapes of the first cavity 111 and the second cavity 112 are not specifically limited in the present invention, as long as the second cavity 112 is disposed below the first cavity 111 and the lower bottom surface of the first cavity 111 and the upper top surface of the second cavity 112 are parallel to each other, for example, the first cavity 111 may be set to be one of a cylinder type, a rectangular parallelepiped type or an irregular hexahedral type, the second cavity 112 may also be set to be one of a cylinder type, a rectangular parallelepiped type or an irregular hexahedral type, and the first cavity 111 may be the same as or different from the second cavity 112.
Alternatively, as shown in fig. 1, the first cavity 111 and the second cavity 112 are separated by a thin film 113.
The material between first cavity 111 and the second cavity 112 is deformed under the effect of pressure difference, the material between first cavity 111 and the second cavity 112 is provided with a film 113, the film can be deformed under smaller pressure, the pressure of the piezoelectric stack structure 120 to the first cavity 111 can be buffered, and then the reaction force of the first cavity 111 to the piezoelectric stack structure 120 is reduced, so that the deformation of the piezoelectric stack structure 120 is increased, the frequency offset is increased, and the sensitivity of the pressure sensor 100 is improved and the large-scale pressure measurement is realized.
In one achievable version of the present embodiment, the thickness of the thin film 113 is between 2-20 um.
The film 113 deforms when a pressure difference exists between the first cavity 111 and the second cavity 112, and as can be seen from the above, the thinner the thickness of the film 113 is, the higher the sensitivity of the pressure sensor 100 is, and those skilled in the art should know that, because the film 113 is made of a material in the silicon substrate layer between the first cavity 111 and the second cavity 112, that is, a silicon film, and when the thickness of the silicon film is too small, a tearing phenomenon may occur when the deformation occurs, after many experimental studies by the applicant, the thickness of the film 113 is set to be between 2 um and 20um, and such an arrangement does not affect the deformation amount of the film 113, and the tearing phenomenon of the film 113 does not occur.
Alternatively, as shown in fig. 1, the center of projection of the first cavity 111 on the bottom surface of the substrate layer 110 coincides with the center of projection of the second cavity 112 on the bottom surface of the substrate layer 110.
When pressure difference exists between the first cavity 111 and the second cavity 112, the film 113 deforms, the projection center of the first cavity 111 on the bottom surface of the substrate layer 110 coincides with the projection center of the second cavity 112 on the bottom surface of the substrate layer 110, when external pressure is applied to the piezoelectric stack structure 120, the film 113 deforms towards the second cavity 112 after the first cavity 111 is pressed, when the projection centers of the second cavity 112 and the first cavity 111 on the bottom surface of the substrate layer 110 coincide, the center position of the deformation of the film 113 coincides with the projection centers of the first cavity 111 and the second cavity 112 on the bottom surface of the substrate layer 110, the maximum central deformation of the film 113 can be ensured, and when larger force is applied, the film 113 is not easy to tear.
In an implementation manner of the embodiment of the present invention, the piezoelectric stack structure 120 includes a bottom electrode 123, a piezoelectric layer 122, and a top electrode 121 stacked in sequence from bottom to top, and an outer edge of the top electrode 121 is a curve.
When the outer edge of the top electrode 121 is curved, the outer edge of the top electrode 121 has no parallel sides, so that when an acoustic wave propagates in the top electrode 121, the propagation path is not repeated, and the generation of spurious modes can be reduced.
The specific shape of the top electrode 121 is not limited in the present invention, as long as there is no parallel edge in the outer edge of the top electrode 121, for example, the outer edge of the top electrode 121 may be one of a circle, an ellipse, a droplet, a liquid metal, and an interdigital electrode, or may be a pattern formed by any curve, as shown in fig. 3 and 4, and the top electrode 121 is configured to be an ellipse and a droplet.
It should be noted that, although the edge of the interdigital electrode is not a curved line, a certain gap exists between each electrode of the interdigital electrode, which can also reduce the generation of the pseudo mode, so the interdigital electrode is also within the protection scope of the present invention, as shown in fig. 5 and fig. 6, the structural schematic diagram of the pressure sensor when the top electrode is an interdigital electrode.
Alternatively, as shown in fig. 1, the outer edge of the bottom electrode 123 is curved.
Like the top electrode 121, when the outer edge of the bottom electrode 123 is curved, the outer edge of the bottom electrode 123 has no parallel side, so that when the acoustic wave propagates in the bottom electrode 123, the propagation path is not repeated, and the generation of spurious modes can be reduced.
As with the top electrode 121, the specific shape of the bottom electrode 123 is not limited in the present invention as long as there is no parallel edge in the outer edge of the bottom electrode 123, and the outer edge of the bottom electrode 123 may be, for example, one of a circle, an ellipse, a droplet, a liquid metal, and an interdigital electrode.
It should be noted that, when the outer edge of the bottom electrode is curved, the outer edge of the top electrode needs to be curved, that is, when the edge of the electrode is curved, there are two schemes, one is the edge curve of only the top electrode 121, and the other is the edge curves of both the bottom electrode 123 and the top electrode 121.
In one achievable form of the embodiment of the invention, the outer edges of the bottom electrode 123 and the top electrode 121 are the same shape.
The edges of the bottom electrode 123 and the top electrode 121 are both curved, and the shapes of the outer edges of the bottom electrode 123 and the top electrode 121 are the same, when an acoustic wave propagates in the bottom electrode 123 and the top electrode 121, the shapes of the outer edges of the top electrode 121 and the bottom electrode 123 are the same, so that the acoustic wave propagates in the top electrode 121 and the bottom electrode 123 at the same amplitude and speed, and the uniformity of the acoustic wave is ensured. As shown in fig. 2 and 3, the top electrode 121 and the bottom electrode 123 have elliptical edges.
It should be noted that, in order to obtain the pressure sensor 100 with better sensitivity and a larger measurement range, the cross sections of the top electrode 121, the bottom electrode 123, the first cavity 111, and the second cavity 112 may be uniformly arranged in a pattern, and the projections of the first cavity 111 and the second cavity 112 on the ground of the substrate layer 110 are overlapped, so that the stresses on the film 113 and the piezoelectric layer 122 are relatively balanced and are relatively sensitive to the external pressure, the sensitivity of the pressure sensor 100 is improved, and the measurement range of the pressure sensor 100 is increased.
Optionally, the top electrode 121 and the bottom electrode 123 are both thin film electrodes.
The top electrode 121 and the bottom electrode 123 are thin film electrodes for transmitting signals and sound waves, have unique ductility and high efficiency, and can also reduce the volume of the pressure sensor 100.
Specific materials of the thin film electrode are not limited and may include a thin film electrode formed using any one of molybdenum, ruthenium, tungsten, iridium, platinum, copper, titanium, tantalum, nickel, and chromium or a thin film electrode formed using an alloy including any one selected from the group consisting of molybdenum, ruthenium, tungsten, iridium, platinum, copper, titanium, tantalum, nickel, and chromium. Both the top electrode 121 and the bottom electrode 123 may be made of the above materials, wherein the top electrode 121 and the bottom electrode 123 may be made of the same material or different materials.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A pressure sensor is characterized by comprising a substrate layer and a piezoelectric stack structure arranged on the upper surface of the substrate layer, wherein a groove is formed in the upper surface of the substrate layer, a closed first cavity is formed between the groove and the piezoelectric stack structure, a closed second cavity is further formed inside the substrate layer, the second cavity is spaced from the first cavity and is located below the first cavity, and the pressure intensity of the first cavity is greater than that of the second cavity.
2. A pressure sensor as claimed in claim 1, wherein the pressure in the first chamber is between 0 and 1 atmosphere and the pressure in the second chamber is 0 atmosphere.
3. The pressure sensor of claim 1, wherein the bottom surface of the first cavity and the top surface of the second cavity are parallel to each other.
4. The pressure sensor of claim 1, wherein the first cavity is separated from the second cavity by a membrane.
5. A pressure sensor according to claim 4, wherein the membrane thickness is between 2-20 um.
6. The pressure sensor of claim 1, wherein a center of projection of the first cavity on the bottom surface of the substrate layer coincides with a center of projection of the second cavity on the bottom surface of the substrate layer.
7. The pressure sensor of claim 1, wherein the piezoelectric stack comprises a bottom electrode, a piezoelectric layer, and a top electrode stacked in sequence from bottom to top, and an outer edge of the top electrode is curved.
8. The pressure sensor of claim 7, wherein an outer edge of the bottom electrode is curvilinear.
9. The pressure sensor of claim 8, wherein the bottom electrode is the same shape as the outer edge of the top electrode.
10. The pressure sensor of claim 7, wherein the top electrode and the bottom electrode are both thin film electrodes.
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| CN115479582A (en) * | 2022-11-03 | 2022-12-16 | 湖南大学 | A barometric altimeter for navigation |
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| WO2021167620A1 (en) * | 2020-02-21 | 2021-08-26 | Kathirgamasundaram Sooriakumar | A capacitive microphone sensor design and fabrication method for achieving higher signal to noise ratio |
| CN112816109A (en) * | 2020-12-31 | 2021-05-18 | 武汉大学 | Radio frequency pressure sensor |
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| CN115479582A (en) * | 2022-11-03 | 2022-12-16 | 湖南大学 | A barometric altimeter for navigation |
| CN115479582B (en) * | 2022-11-03 | 2023-02-14 | 湖南大学 | A barometric altimeter for navigation |
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