CN113777690A - Method for generating compensator - Google Patents
Method for generating compensator Download PDFInfo
- Publication number
- CN113777690A CN113777690A CN202111170050.0A CN202111170050A CN113777690A CN 113777690 A CN113777690 A CN 113777690A CN 202111170050 A CN202111170050 A CN 202111170050A CN 113777690 A CN113777690 A CN 113777690A
- Authority
- CN
- China
- Prior art keywords
- etching
- film layer
- auxiliary film
- substrate
- different
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 69
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 238000004364 calculation method Methods 0.000 claims abstract description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000010453 quartz Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000004026 adhesive bonding Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 13
- 239000003292 glue Substances 0.000 abstract description 2
- 238000000992 sputter etching Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 24
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 239000000377 silicon dioxide Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000005331 crown glasses (windows) Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/32—Holograms used as optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Abstract
The application discloses a method for generating a compensator, which relates to the technical field of optics and comprises the steps of coating a film on a substrate to form an auxiliary film layer; coating glue, exposing and developing on the auxiliary film layer to form an original pattern; etching the developed auxiliary film layer by adopting preset gas, and stopping etching after continuously etching for a preset time period when the etching reaches the substrate to generate a calculation hologram; the material of the substrate is different from that of the auxiliary film layer, and the etching rate of the preset gas on the substrate is different from that on the auxiliary film layer. Therefore, the auxiliary film layer is added on the substrate, the condition that the etching rate is different due to different ion concentrations and other etching parameters in different areas in the etching cavity in the ion etching process is avoided, and the condition that the wavefront accuracy of the computed hologram is influenced due to the fact that the etching depths of the different areas are not uniform is further avoided.
Description
Technical Field
The present application relates to the field of optical technology, and in particular, to a method of generating a compensator.
Background
The reflector with large caliber and complex curved surface (such as aspheric surface, off-axis aspheric surface, free-form surface and the like) is a core element of a space-to-ground high-resolution optical remote sensor. Due to the extremely high requirement on surface shape precision, the processing and detection of the complex curved surface reflector face huge challenges. The detection technology is generally zero detection and non-zero detection, a zero compensator (Null lenses) in the zero detection technology is widely applied, and the Null lenses can be divided into lens type Null lenses and diffraction type Null lenses according to the working principle.
The diffraction type Null lens mainly adopts a Computer Generated Hologram (CGH for short) as a compensator, and compared with the traditional compensator, the CGH detection method can theoretically generate any wavefront and has the advantages of small design residual error, simple structure, no assembly error, short manufacturing period, flexible design and the like.
The CGH can be divided into an amplitude type and a phase type according to a manufacturing process. The diffraction efficiency of the diffraction order used by the amplitude type CGH is low, and the amplitude type CGH is only suitable for detecting materials with high surface reflectivity, such as silicon carbide and silicon. In order to improve the contrast of fringes in the detection process, a phase type CGH is required to be used for aspheric lenses with low reflectivity, such as microcrystalline glass, fused quartz and other materials, but more processing errors, such as etching depth uniformity errors, are introduced into the phase type CGH.
Disclosure of Invention
An object of the present application is to provide a method for generating a compensator to improve the uniformity of the etching depth of a phase type CGH.
A first aspect of an embodiment of the present application provides a method for generating a compensator, including: coating a film on a substrate to form an auxiliary film layer; coating glue, exposing and developing on the auxiliary film layer to form an original pattern; etching the developed auxiliary film layer by adopting a preset gas, and stopping etching after continuously etching for a preset time period when the etching reaches the substrate to generate a calculation hologram; the material of the substrate is different from that of the auxiliary film layer, and the etching rate of the preset gas on the substrate is different from that on the auxiliary film layer.
In an embodiment, the developing on the auxiliary film to form the original pattern includes: spin-coating a photoresist on the auxiliary film layer; and exposing and developing the photoresist by using a mask plate with a preset pattern.
In an embodiment, after the etching the developed auxiliary film layer with the preset gas and continuing to etch for a preset time period when the etching reaches the substrate, the etching is stopped, and after a holographic pattern is generated, the method further includes: and removing the residual photoresist on the auxiliary film layer.
In one embodiment, the substrate is made of a glass material BK7, and SiO in BK72The content of (silicon dioxide) is 65-73%.
In an embodiment, the auxiliary film is made of quartz, and the SiO in the quartz2The content of (silicon dioxide) is more than 99%.
In one embodiment, the etching rate of the predetermined gas on the substrate is less than 10 nm/s.
In an embodiment, an etching rate of the predetermined gas on the auxiliary film is greater than 40 nm/s.
In one embodiment, the predetermined gas is CHF3And/or CF4And O2The mixed gas of (1).
In one embodiment, the thickness of the auxiliary film is in a range of 300nm to 600 nm.
In one embodiment, the photoresist has a thickness in the range of 300nm to 800 nm.
Compared with the prior art, the beneficial effect of this application is:
the method for generating the compensator comprises the steps of firstly coating a film on a substrate before etching the substrate, selecting an auxiliary film layer material which is different from the substrate material and is easier to etch, and utilizing the characteristic that the rates of different materials etched by preset gas are different, so that the etching depth of the compensator is controllable.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a flowchart illustrating a method for generating a compensator according to an embodiment of the present application.
Fig. 2 is a flowchart illustrating sub-steps of step 120 according to an embodiment of the present application.
Fig. 3 is a schematic diagram of a process for generating a compensator according to an embodiment of the present application.
Fig. 4 is a schematic diagram of a process for generating a compensator according to an embodiment of the present application.
Fig. 5 is a schematic diagram of a process for generating a compensator according to an embodiment of the present application.
Fig. 6 is a schematic diagram of a process for generating a compensator according to an embodiment of the present application.
Fig. 7 is a schematic diagram of a process for generating a compensator according to an embodiment of the present application.
Fig. 8 is a schematic diagram of a process for generating a compensator according to an embodiment of the present application.
Reference numerals:
icon: 1-a compensator; 2-a substrate; 3-auxiliary film layer; 4-photoresist.
Detailed Description
The terms "first," "second," "third," and the like are used for descriptive purposes only and not for purposes of indicating or implying relative importance, and do not denote any order or order.
Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present application, it should be noted that the terms "inside", "outside", "left", "right", "upper", "lower", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships that are conventionally arranged when products of the application are used, and are used only for convenience in describing the application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the application.
In the description of the present application, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements.
The technical solution of the present application will be clearly and completely described below with reference to the accompanying drawings.
Please refer to fig. 1, which is a flowchart illustrating a method for generating a compensator 1 according to an embodiment of the present application. The method comprises the following steps:
step 110: and coating a film on the substrate 2 to form an auxiliary film layer 3.
In the above steps, as shown in fig. 3, glass can be selected as a material of the substrate 2, such as BK7, BK7 is a common borosilicate crown glass, widely used as an optical material in the visible and near infrared regions, BK7 is excellent in mechanical properties, has excellent scratch resistance, and since BK7 is chemically stable, grinding and polishing are not required for special treatment, permeability in the visible spectrum is excellent, bubbles and impurities are less, and streaks adversely affecting the optical system and unevenness in refractive index are reduced to a level where they hardly affect the optical system. Therefore, BK7 is used in most optical elements such as a mirror or a spectroscope substrate or various kinds of coated filter substrates in addition to a lens or a prism.
In one embodiment, as shown in FIG. 4, quartz may be used as the material of the auxiliary film 3, and the thickness of the film may be in the range of 300nm to 600 nm.
Step 120: and gluing, exposing and developing the auxiliary film layer 3 to form an original pattern.
In the above steps, the original pattern may be an original pattern of a phase-type computation hologram, and in order to achieve high diffraction efficiency, it is necessary to fabricate the phase-type computation hologram on the compensator 1, and the fringe density and fringe position on the original pattern of the phase-type computation hologram can comprehensively record the amplitude and phase of the optical wave, and can synthesize a complex object hologram, thereby having great flexibility.
In an embodiment, as shown in fig. 2, step 120 may specifically include:
step 121: and spin-coating photoresist 4 on the auxiliary film layer 3.
In the above step, the photoresist 4 may be a negative photoresist 4 or a positive photoresist 4. As shown in fig. 5, the thickness of the photoresist 4 may range from 300nm to 800 nm.
Step 122: and exposing and developing the photoresist 4 by using a mask plate with a preset pattern.
In the above steps, the exposed developed structure is shown in FIG. 6, and the pattern of the reticle is the same as or opposite to the original pattern of the desired computed hologram.
In one embodiment, the photoresist is exposed by using a mask with a predetermined pattern or directly using a laser direct writing apparatus, and then a developing process is performed.
In one embodiment, the photoresist 4 is exposed by ultraviolet light.
Step 130: and etching the developed auxiliary film layer 3 by adopting preset gas, and stopping etching after continuously etching for a preset time period when the etching reaches the substrate 2 to generate the calculation hologram.
In the above steps, as shown in fig. 7, the material of the substrate 2 is different from the material of the auxiliary film 3, so that the etching rate of the predetermined gas on the substrate 2 is different from the etching rate on the auxiliary film 3, i.e. the etching difficulty is different. And because the gas concentration at each position is different and the etching rate is also different, the situation that the etching rate is also different at different positions of the substrate 2 inevitably occurs, so that when the etching reaches the substrate 2, the etching is continued for 3s-5s, each position needing to be etched is fully etched, and the etching uniformity is further improved.
In one embodiment, the auxiliary film 3 may be etched by a dry etching method, such as RIE (reactive ion etching) or ICP (inductively coupled plasma etching).
In an embodiment, the etching rate of the auxiliary film 3 by the predetermined gas may be determined in advance, for example, the etching may be performed on an experimental board with a known thickness, which is the same as the material of the auxiliary film 3, by using the predetermined gas, and the time required for the predetermined gas to etch the experimental board with the known thickness is recorded, so as to obtain the etching rate of the auxiliary film 3 by the predetermined gas. When the phase type calculation hologram is manufactured, the thickness of the auxiliary film layer 3 plated on the substrate 2 can be known, and the speed of the preset gas etching the auxiliary film layer 3 can be known, so that the time for the preset gas etching the complete auxiliary film layer 3 can be calculated, the etching can be stopped in time, the non-uniform etching depth can be prevented, and the calculation hologram with small etching error can be generated.
In an embodiment, the material of the auxiliary film 3 may be quartz, the thickness of the auxiliary film 3 may be 300nm-600nm, and SiO in the quartz2The content of (silicon dioxide) is more than 99%.
In one embodiment, the substrate 2 may be made of glassSiO in BK7 and BK7 as raw materials2The content range of (silicon dioxide) is 65% -73%.
In one embodiment, the predetermined gas is CHF3(trifluoromethane) and/or CF4(carbon tetrafluoride) and O2And (3) mixing.
In practical scenarios, the preset gas is for SiO2(silicon dioxide) etching, SiO2The higher the (silicon dioxide) content, the faster the etching rate, the SiO of the substrate 2 material2The content of (silicon dioxide) is obviously lower than that of SiO of the material of the auxiliary film layer 32(silicon dioxide) content, so that the etching rate is reduced once the etching process reaches the substrate 2 material layer, and therefore the etching rate of the predetermined gas on the substrate 2 is greater than that of the predetermined gas on the auxiliary film layer 3.
In one embodiment, the etching rate of the predetermined gas on the substrate 2 is less than 10nm/s, and the etching rate of the predetermined gas on the auxiliary film 3 is greater than 40 nm/s.
Step 140: and removing the residual photoresist on the auxiliary film layer.
In this step, the structure after removing the photoresist is as shown in fig. 8, the method for removing the residual photoresist may be dry photoresist removal, which is to remove the photoresist by using plasma. For example, using oxygen plasma, the photoresist on the auxiliary film layer is chemically reacted in the oxygen plasma to generate gaseous CO2，CO2And H2The O can be pumped away by a vacuum system to complete the photoresist stripping process.
As shown in fig. 8, a compensator 1 obtained by the above method for the embodiment of the present application, wherein the generated compensator 1 includes: the film comprises a substrate 2, an auxiliary film layer 3 and photoresist 4, wherein the auxiliary film layer 3 and the photoresist 4 are arranged on the surface of the substrate 2.
In an actual scene, if the substrate 2 is directly etched by using an ion etching method in the process of generating the compensator 1, due to different ion concentrations in different areas in an etching cavity and different other etching parameters, the etching rates are different, so that the etching depths in different areas are not uniform, and the wavefront accuracy of the final compensator 1 is affected by the depth uniformity error. Therefore, in the present application, before the substrate 2 is etched, the substrate 2 is first coated, so that the coating precision can be controlled within 1%, and the thickness uniformity of the auxiliary film layer 3 is better. By selecting the auxiliary film layer 3 which is made of a material different from that of the substrate 2 and is easier to etch, and utilizing the characteristic that the preset gas etches different materials at different rates, the etching depth of the compensator 1 is controllable, and once the etching process reaches the substrate 2 layer, the etching rate can be reduced, so that the problem that the wavefront accuracy of the calculated hologram is influenced due to different etching rates caused by different ion concentrations in different regions in an etching cavity and different other etching parameters is solved.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A method of generating a compensator, comprising:
coating a film on a substrate to form an auxiliary film layer;
gluing, exposing and developing the auxiliary film layer to form an original pattern;
etching the developed auxiliary film layer by adopting a preset gas, and stopping etching after continuously etching for a preset time period when the etching reaches the substrate to generate a calculation hologram;
the material of the substrate is different from that of the auxiliary film layer, and the etching rate of the preset gas on the substrate is different from that on the auxiliary film layer.
2. The method of claim 1, wherein the developing on the auxiliary film layer to form an original pattern comprises:
spin-coating a photoresist on the auxiliary film layer;
and exposing and developing the photoresist by using a mask plate with a preset pattern.
3. The method of claim 1, wherein after the etching the developed auxiliary film layer with the predetermined gas and continuing to etch the substrate for a predetermined period of time, stopping the etching to generate the holographic pattern, further comprising:
and removing the residual photoresist on the auxiliary film layer.
4. The method as claimed in claim 1, wherein the substrate is made of glass BK7, and SiO in BK72The content of (A) is 65-73%.
5. The method of claim 4, wherein the auxiliary film layer is made of quartz, and SiO is contained in the quartz2The content of (A) is more than 99%.
6. The method of claim 5, wherein the predetermined gas has an etch rate of less than 10nm/s on the substrate.
7. The method of claim 6, wherein the etching rate of the predetermined gas on the auxiliary film layer is greater than 40 nm/s.
8. The method of claim 1, wherein the predetermined gas is CHF3And/or CF4And O2The mixed gas of (1).
9. The method of any one of claims 1 to 8, wherein the auxiliary film layer has a thickness in the range of 300nm to 600 nm.
10. The method of claim 2, wherein the photoresist has a thickness in the range of 300nm to 800 nm.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2021105689627 | 2021-05-24 | ||
| CN202110568962.7A CN113296182A (en) | 2021-05-24 | 2021-05-24 | Method for generating compensator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113777690A true CN113777690A (en) | 2021-12-10 |
| CN113777690B CN113777690B (en) | 2024-10-25 |
Family
ID=77324563
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110568962.7A Pending CN113296182A (en) | 2021-05-24 | 2021-05-24 | Method for generating compensator |
| CN202111170050.0A Active CN113777690B (en) | 2021-05-24 | 2021-10-08 | Method for generating compensator |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110568962.7A Pending CN113296182A (en) | 2021-05-24 | 2021-05-24 | Method for generating compensator |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN113296182A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4474642A (en) * | 1982-07-20 | 1984-10-02 | Tokyo Denshi Kagaku Co., Ltd. | Method for pattern-wise etching of a metallic coating film |
| CN1672098A (en) * | 2002-07-31 | 2005-09-21 | 飞思卡尔半导体公司 | Lithographic template having a repaired gap defect |
| CN101441996A (en) * | 2007-11-21 | 2009-05-27 | 中芯国际集成电路制造(上海)有限公司 | Method for forming and etching hard mask layer |
| US20160240276A1 (en) * | 2013-09-26 | 2016-08-18 | Konica Minolta, Inc. | Metal Grating For X-Rays, Production Method For Metal Grating For X-Rays, Metal Grating Unit For X-Rays, And X-Ray Imaging Device |
| CN106707715A (en) * | 2017-01-11 | 2017-05-24 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor device and manufacturing method of semiconductor device |
| CN109256335A (en) * | 2017-07-13 | 2019-01-22 | 长鑫存储技术有限公司 | Method for forming pattern of semiconductor structure |
| CN110632689A (en) * | 2019-08-16 | 2019-12-31 | 瑞声通讯科技(常州)有限公司 | Method for manufacturing surface relief grating structure |
| CN111103758A (en) * | 2019-12-28 | 2020-05-05 | 中国科学院长春光学精密机械与物理研究所 | Amplitude/phase hybrid computational holographic panel and preparation method thereof |
| CN111427110A (en) * | 2020-04-23 | 2020-07-17 | 苏州康启环境科技有限公司 | Method for preparing coupling emergent grating mother plate of optical waveguide display module in AR display |
-
2021
- 2021-05-24 CN CN202110568962.7A patent/CN113296182A/en active Pending
- 2021-10-08 CN CN202111170050.0A patent/CN113777690B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4474642A (en) * | 1982-07-20 | 1984-10-02 | Tokyo Denshi Kagaku Co., Ltd. | Method for pattern-wise etching of a metallic coating film |
| CN1672098A (en) * | 2002-07-31 | 2005-09-21 | 飞思卡尔半导体公司 | Lithographic template having a repaired gap defect |
| CN101441996A (en) * | 2007-11-21 | 2009-05-27 | 中芯国际集成电路制造(上海)有限公司 | Method for forming and etching hard mask layer |
| US20160240276A1 (en) * | 2013-09-26 | 2016-08-18 | Konica Minolta, Inc. | Metal Grating For X-Rays, Production Method For Metal Grating For X-Rays, Metal Grating Unit For X-Rays, And X-Ray Imaging Device |
| CN106707715A (en) * | 2017-01-11 | 2017-05-24 | 中国科学院长春光学精密机械与物理研究所 | Semiconductor device and manufacturing method of semiconductor device |
| CN109256335A (en) * | 2017-07-13 | 2019-01-22 | 长鑫存储技术有限公司 | Method for forming pattern of semiconductor structure |
| CN110632689A (en) * | 2019-08-16 | 2019-12-31 | 瑞声通讯科技(常州)有限公司 | Method for manufacturing surface relief grating structure |
| CN111103758A (en) * | 2019-12-28 | 2020-05-05 | 中国科学院长春光学精密机械与物理研究所 | Amplitude/phase hybrid computational holographic panel and preparation method thereof |
| CN111427110A (en) * | 2020-04-23 | 2020-07-17 | 苏州康启环境科技有限公司 | Method for preparing coupling emergent grating mother plate of optical waveguide display module in AR display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113296182A (en) | 2021-08-24 |
| CN113777690B (en) | 2024-10-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110140089B (en) | Microlithographic fabrication of structures | |
| CN110187415B (en) | Optical element surface shape correction method based on reactive ion etching thinning | |
| CN111505767B (en) | Preparation method of lithium niobate photonic chip based on silicon oxide mask | |
| Mattelin et al. | Design and fabrication of blazed gratings for a waveguide-type head mounted display | |
| KR20110033025A (en) | Ultraviolet High Transmittance Double-Line Grating Polarizer for Manufacturing Photo-alignment Film and Its Manufacturing Method | |
| JP4204824B2 (en) | Optical system | |
| US20040232106A1 (en) | Method of manufacturing a mirror and a mirror device | |
| CN102193132A (en) | Anti-dazzling polaroid and image display device equipped therewith | |
| CN107153230A (en) | Manufacture method based on controllable magnetic field balzed grating, | |
| Weigel et al. | Perspectives of reactive ion etching of silicate glasses for optical microsystems | |
| CN115494567B (en) | Composite structure of microlens array nanometer grating, preparation method and application | |
| CN113777690B (en) | Method for generating compensator | |
| Kuzmenko et al. | Fabrication and testing of a silicon immersion grating for infrared spectroscopy | |
| CN106707715B (en) | A kind of semiconductor devices and preparation method thereof | |
| JPWO2005096037A1 (en) | Optical member and manufacturing method thereof | |
| CN117518447A (en) | Three-dimensional microscopic imaging method and device based on super-structured lens | |
| CN117518448A (en) | A three-dimensional microscopic imaging method and device based on metasurface | |
| JP6822084B2 (en) | A method for manufacturing a glass substrate for a semiconductor and a glass substrate for a semiconductor having a non-through hole. | |
| CN112639575A (en) | High refractive index waveguide for augmented reality | |
| US20090208881A1 (en) | Immersion ultraviolet photolithography process | |
| Kong | 3d printed on-chip parabolic mirror for chip-to-fiber and chip-to-chip coupling | |
| CN117849918B (en) | Metalens edge detection imaging method and system based on first-order two-dimensional differential operation | |
| CN117991418B (en) | Metasurface edge detection imaging method and system based on first-order two-dimensional differential operation | |
| US20240025003A1 (en) | Method of producing an optical element for a lithography apparatus | |
| Wang et al. | High-performance large-area ultra-broadband (UV to IR) nanowire-grid polarizers and polarizing beam-splitters |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |