CN113758641A - Method and device for detecting defects of silicon carbide wafer penetrating pipeline - Google Patents
Method and device for detecting defects of silicon carbide wafer penetrating pipeline Download PDFInfo
- Publication number
- CN113758641A CN113758641A CN202110988095.2A CN202110988095A CN113758641A CN 113758641 A CN113758641 A CN 113758641A CN 202110988095 A CN202110988095 A CN 202110988095A CN 113758641 A CN113758641 A CN 113758641A
- Authority
- CN
- China
- Prior art keywords
- wafer
- pipeline
- vacuum
- detecting defects
- defects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007547 defect Effects 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 27
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title abstract description 22
- 229910010271 silicon carbide Inorganic materials 0.000 title abstract description 22
- 230000000149 penetrating effect Effects 0.000 title abstract description 10
- 238000001514 detection method Methods 0.000 claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000005507 spraying Methods 0.000 claims abstract description 6
- 230000035515 penetration Effects 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 208000003464 asthenopia Diseases 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The invention discloses a method and a device for detecting defects of a silicon carbide wafer penetrating pipeline, relates to the technical field of silicon carbide wafer detection, can visually observe whether a penetrating pipeline exists or not, is short in detection time, is not easy to cause fatigue for detection personnel, and can effectively ensure the consistency of detection. The invention relates to a method for detecting defects of a silicon carbide wafer penetrating pipeline, which comprises the following steps: a vacuum device is adopted to generate pressure difference on two sides of the wafer to be detected; under the condition, spraying alcohol liquid on one side of the wafer; and judging whether the wafer has a through type pipeline defect or not by observing whether the other side of the wafer has a liquid leakage condition or not.
Description
Technical Field
The invention relates to the technical field of silicon carbide wafer detection, in particular to a method and a device for detecting defects of a silicon carbide wafer penetrating type pipeline.
Background
The pipe defect is a crystal defect generated in the production process of the SiC crystal. Such pipe defects are hollow dislocations penetrating along the C-axis, shaped like tiny pipes; the radius of the pipe is from tens of nanometers to several micrometers; if the tube extends through the wafer in the longitudinal direction, the quality of the chip is severely affected.
In the prior art, there are two main methods for detecting such defects: one is that the appearance of the pipeline defect can be observed through a scanning electron microscope; another method is chemical etching followed by microscopic examination.
However, the scanning electron microscope detection method has high cost and low efficiency; due to the problem of the field of view of the scanning electron microscope, a skilled operator needs about 45 minutes if the whole wafer is detected; the operator observes the obtained image through the display for a long time, and visual fatigue is easy to generate to influence the detection effect. The microscope detection method after chemical corrosion has the defects of the scanning electron microscope detection method, also can damage the sample, and is not suitable for large-scale production. In addition, since both methods detect the side of the focus wafer, it is difficult to determine whether or not a through type pipe is generated.
Disclosure of Invention
The invention aims to provide a method and a device for detecting defects of a silicon carbide wafer penetration type pipeline, which can visually observe whether the penetration type pipeline exists or not, have short detection time, are not easy to cause fatigue for detection personnel, and can effectively ensure the consistency of detection.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for detecting defects of a SiC wafer penetration type pipeline comprises the following steps:
a vacuum device is adopted to generate pressure difference on two sides of the wafer to be detected;
under the condition, spraying alcohol liquid on one side of the wafer;
and judging whether the wafer has a through type pipeline defect or not by observing whether the other side of the wafer has a liquid leakage condition or not.
Specifically, the method for detecting the defects of the SiC wafer penetration pipeline comprises the following steps:
wiping the surface of the wafer clean;
placing a wafer on a chuck;
after the pressure valve is opened, the vacuum degree is adjusted to 1.5-2.5bar by observing the pressure gauge;
uniformly dripping alcohol on the surface of the wafer;
and observing whether liquid penetrates through the wafer under the auxiliary condition of a light source to judge whether the pipeline defect exists.
Preferably, after opening the pressure valve, the vacuum is adjusted to 2bar by observing the pressure gauge.
Wherein the light source is 40-50 degrees to the wafer.
Preferably, the light source is at 45 ° to the wafer.
Further, the light source is a flashlight.
Compared with the prior art, the method for detecting the defects of the SiC wafer penetrating pipeline has the following advantages:
in the method for detecting the defects of the SiC wafer penetration pipeline, the following steps are adopted: a vacuum device is adopted to generate pressure difference on two sides of the wafer to be detected; under the condition, spraying alcohol liquid on one side of the wafer; whether the through-type pipeline defect exists on the wafer is judged by observing whether the liquid leakage condition exists on the other side of the wafer, so that the equipment used in detection is simple and precision equipment such as a scanning electron microscope and a microscope is not needed; the operation is simple, and the observation is carried out for 3-5 seconds under the auxiliary condition of a light source only by placing the wafer, opening the vacuum and dripping alcohol; in addition, the alcohol is volatilized rapidly after testing, the residue is less, and the pollution to the wafer is less.
A device for detecting defects of a SiC wafer penetration type pipeline comprises: the wafer chuck and the external vacuum system are communicated with the wafer chuck through a vacuum pipeline, and the vacuum pipeline is provided with a pressure valve and a negative pressure gauge which are respectively used for controlling and monitoring the vacuum condition;
the surface of the wafer chuck is provided with four coaxial circular ring bulges, and the circular ring bulges are used for supporting a wafer; the circular ring bulge on the outermost ring is in a closed form so as to maintain the internal vacuum degree; the other inner three circles of circular ring bulges are provided with a gap for gas circulation at intervals of 120 degrees;
the center of the wafer chuck is provided with a round hole, and the round hole is communicated with the vacuum pipeline and used for gas to flow through the outside.
In practical application, the wafer chuck is made of resin materials.
Wherein the height of the circular ring bulge is 4-6 mm; the caliber of the notch of the circular ring bulge is 3-5 mm; the aperture of the round hole of the wafer chuck is 3-5 mm.
Preferably, the height of the circular ring bulge is 5 mm; the caliber of the notch of the circular ring bulge is 4 mm; the aperture of the round hole of the wafer chuck is 4 mm.
The detection device for the defects of the SiC wafer penetration type pipeline and the detection method for the defects of the SiC wafer penetration type pipeline have the same advantages compared with the prior art, and are not repeated herein.
Drawings
Fig. 1 is a schematic flow chart of a method for detecting defects in a sic wafer penetration pipeline according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a method for detecting defects in a sic wafer penetration pipeline according to an embodiment of the present invention;
fig. 3 is a first view structural diagram of an apparatus for detecting defects in a sic wafer penetration pipeline according to an embodiment of the present invention;
fig. 4 is a second perspective structural diagram of an apparatus for detecting defects in a sic wafer penetration pipeline according to an embodiment of the present invention.
Reference numerals:
1-a wafer chuck; 11-circular ring bulge; a 111-notch; 12-a circular hole; 2-vacuum pipeline; 3-a pressure valve; 4-negative pressure gauge.
Detailed Description
For the convenience of understanding, the following describes in detail the method and apparatus for detecting defects in a sic wafer penetration pipeline according to embodiments of the present invention with reference to the accompanying drawings.
The embodiment of the invention provides a method for detecting defects of a silicon carbide wafer penetration type pipeline, which comprises the following steps of:
step S1, generating pressure difference on two sides of the wafer to be tested by adopting a vacuum device;
step S2, spraying alcohol liquid on one side of the wafer under the condition;
and step S3, judging whether the wafer has a through type pipeline defect by observing whether the other side of the wafer has a liquid leakage condition.
Compared with the prior art, the method for detecting the defects of the SiC wafer penetrating pipeline has the following advantages:
in the method for detecting the defects of the SiC wafer penetration pipeline provided by the embodiment of the invention, the following steps are adopted: a vacuum device is adopted to generate pressure difference on two sides of the wafer to be detected; under the condition, spraying alcohol liquid on one side of the wafer; whether the through-type pipeline defect exists on the wafer is judged by observing whether the liquid leakage condition exists on the other side of the wafer, so that the equipment used in detection is simple and precision equipment such as a scanning electron microscope and a microscope is not needed; the operation is simple, and the observation is carried out for 3-5 seconds under the auxiliary condition of a light source only by placing the wafer, opening the vacuum and dripping alcohol; in addition, the alcohol is volatilized rapidly after testing, the residue is less, and the pollution to the wafer is less.
The embodiment of the invention provides a method for detecting defects of a silicon carbide wafer penetration type pipeline, which specifically comprises the following steps of:
step S1', wiping the surface of the wafer clean;
step S2', placing the wafer on a chuck;
step S3', after the pressure valve is opened, the vacuum degree is adjusted to 1.5-2.5bar by observing the pressure gauge;
step S4', uniformly dripping alcohol on the surface of the wafer;
step S5', under the light source assisted condition, observing whether there is liquid penetrating the wafer to determine whether there is a defect in the pipe.
Preferably, after opening the pressure valve, the vacuum is adjusted to 2bar by observing the pressure gauge.
Wherein the light source may be at 40-50 deg. to the wafer.
Preferably, the light source may be at 45 ° to the wafer.
Further, the light source may be emitted using a flashlight.
An embodiment of the present invention provides an apparatus for detecting defects in a silicon carbide wafer penetration type pipeline, as shown in fig. 3 and 4, including: the wafer chuck 1 and an external vacuum system (not shown in the figure) communicated with the wafer chuck 1 through a vacuum pipeline 2, and the vacuum pipeline 2 is provided with a pressure valve 3 and a negative pressure gauge 4 which are respectively used for controlling and monitoring the vacuum condition;
the surface of the wafer chuck 1 is provided with four coaxial circular ring bulges 11, and the circular ring bulges 11 are used for supporting a wafer; the circular ring bulge 11 at the outermost ring is in a closed form so as to maintain the internal vacuum degree; the other inner three circles of circular protrusions 11 are provided with gaps 111 for gas circulation at intervals of 120 degrees;
the wafer chuck 1 has a circular hole 12 at the center thereof, and the circular hole 12 is communicated with the vacuum pipe 2 for gas communication with the outside.
In practical applications, the wafer chuck 1 may be made of a resin material.
Wherein, the height of the circular ring bulge 11 can be 4-6 mm; the aperture of the notch 111 of the circular protrusion 11 may be 3-5 mm; the diameter of the circular hole 12 of the wafer chuck 1 may be 3-5 mm.
Preferably, the height of the annular protrusion 11 may be 5 mm; the aperture of the notch 111 of the circular protrusion 11 may be 4 mm; the diameter of the circular hole 12 of the wafer chuck 1 may be 4 mm.
It should be noted that, according to the method and apparatus for detecting defects in a silicon carbide wafer through-type pipe provided in the embodiments of the present invention, not only a negative pressure is generated on one side of a wafer, but also a pressure difference is generated on both sides of the wafer under an atmospheric pressure condition, so as to drive a liquid to penetrate through the through-type pipe existing in the wafer; alternatively, a positive pressure may be applied to one side of the wafer, or a pressure differential may be created across the wafer.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for detecting defects of a SiC wafer penetration type pipeline is characterized by comprising the following steps:
a vacuum device is adopted to generate pressure difference on two sides of the wafer to be detected;
under the condition, spraying alcohol liquid on one side of the wafer;
and judging whether the wafer has a through type pipeline defect or not by observing whether the other side of the wafer has a liquid leakage condition or not.
2. The method for detecting defects in a SiC wafer-penetrated pipe according to claim 1, comprising the steps of:
wiping the surface of the wafer clean;
placing a wafer on a chuck;
after the pressure valve is opened, the vacuum degree is adjusted to 1.5-2.5bar by observing the pressure gauge;
uniformly dripping alcohol on the surface of the wafer;
and observing whether liquid penetrates through the wafer under the auxiliary condition of a light source to judge whether the pipeline defect exists.
3. The method for detecting defects in SiC wafer-penetrating pipes according to claim 2, wherein the degree of vacuum is adjusted to 2bar by observing the pressure gauge after opening the pressure valve.
4. The method of claim 2 or 3, wherein the light source is positioned at an angle of 40-50 ° with respect to the wafer.
5. The method of detecting defects in SiC wafer-through channels of claim 4, wherein the light source is positioned at 45 ° to the wafer.
6. The method of detecting defects in a SiC wafer through pipe as claimed in claim 2, wherein the light source is a flashlight.
7. A detection device for defects of a SiC wafer penetration type pipeline is characterized by comprising: the wafer chuck and the external vacuum system are communicated with the wafer chuck through a vacuum pipeline, and the vacuum pipeline is provided with a pressure valve and a negative pressure gauge which are respectively used for controlling and monitoring the vacuum condition;
the surface of the wafer chuck is provided with four coaxial circular ring bulges, and the circular ring bulges are used for supporting a wafer; the circular ring bulge on the outermost ring is in a closed form so as to maintain the internal vacuum degree; the other inner three circles of circular ring bulges are provided with a gap for gas circulation at intervals of 120 degrees;
the center of the wafer chuck is provided with a round hole, and the round hole is communicated with the vacuum pipeline and used for gas to flow through the outside.
8. The apparatus for detecting defects in SiC wafer through type pipelines as claimed in claim 7, wherein the wafer chuck is made of a resin material.
9. The apparatus for detecting SiC wafer through type pipe defects of claim 7, wherein the height of the annular protrusion is 4-6 mm; the caliber of the notch of the circular ring bulge is 3-5 mm; the aperture of the round hole of the wafer chuck is 3-5 mm.
10. The apparatus for detecting SiC wafer through type pipe defects of claim 9, wherein the height of the annular protrusion is 5 mm; the caliber of the notch of the circular ring bulge is 4 mm; the aperture of the round hole of the wafer chuck is 4 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110988095.2A CN113758641A (en) | 2021-08-26 | 2021-08-26 | Method and device for detecting defects of silicon carbide wafer penetrating pipeline |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110988095.2A CN113758641A (en) | 2021-08-26 | 2021-08-26 | Method and device for detecting defects of silicon carbide wafer penetrating pipeline |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113758641A true CN113758641A (en) | 2021-12-07 |
Family
ID=78791315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110988095.2A Pending CN113758641A (en) | 2021-08-26 | 2021-08-26 | Method and device for detecting defects of silicon carbide wafer penetrating pipeline |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113758641A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003161704A (en) * | 2001-11-28 | 2003-06-06 | Komatsu Electronic Metals Co Ltd | Method of detecting defect of semiconductor wafer |
| CN109187580A (en) * | 2018-11-01 | 2019-01-11 | 上海超硅半导体有限公司 | A kind of detection method of silicon polished defect |
| CN110361143A (en) * | 2019-06-27 | 2019-10-22 | 山东天岳先进材料科技有限公司 | Utilize the method and device of gas detection semiconductor silicon carbide substrate large scale micro-pipe |
| CN110361139A (en) * | 2019-06-03 | 2019-10-22 | 山东天岳先进材料科技有限公司 | The method and device of large scale micro-pipe in a kind of detection semiconductor silicon carbide substrate |
| CN111982931A (en) * | 2020-08-27 | 2020-11-24 | 惠州高视科技有限公司 | High-precision wafer surface defect detection device and detection method thereof |
-
2021
- 2021-08-26 CN CN202110988095.2A patent/CN113758641A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003161704A (en) * | 2001-11-28 | 2003-06-06 | Komatsu Electronic Metals Co Ltd | Method of detecting defect of semiconductor wafer |
| CN109187580A (en) * | 2018-11-01 | 2019-01-11 | 上海超硅半导体有限公司 | A kind of detection method of silicon polished defect |
| CN110361139A (en) * | 2019-06-03 | 2019-10-22 | 山东天岳先进材料科技有限公司 | The method and device of large scale micro-pipe in a kind of detection semiconductor silicon carbide substrate |
| CN110361143A (en) * | 2019-06-27 | 2019-10-22 | 山东天岳先进材料科技有限公司 | Utilize the method and device of gas detection semiconductor silicon carbide substrate large scale micro-pipe |
| CN111982931A (en) * | 2020-08-27 | 2020-11-24 | 惠州高视科技有限公司 | High-precision wafer surface defect detection device and detection method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100821765B1 (en) | Inspection method and manufacturing method of silicon wafer, manufacturing method of semiconductor device and silicon wafer | |
| CN110044806A (en) | Image, sound emission, electrochemistry integrated stress corrosion cracking in-situ testing device | |
| JP7442839B2 (en) | Defect detection method for thin film layers | |
| US8384915B2 (en) | Test block for use in a welding process | |
| CN106597700A (en) | Detection method and detection equipment applied by same | |
| CN113884411A (en) | Method for testing hydrogen diffusion coefficient of local structure in material by using SKPFM (transient phase shift keying) | |
| CN113758641A (en) | Method and device for detecting defects of silicon carbide wafer penetrating pipeline | |
| CN113884410A (en) | Device for observing hydrogen diffusion process of local tissue in material by using SKPFM (scanning electron fluorescence microscopy) | |
| CN106769458A (en) | Steel pipe stretching device | |
| CN111795784A (en) | Helium detection process for detecting battery leakage | |
| CN103383367A (en) | Method for scanning type thermal conduction line temperature detection of workpiece shallow cracks | |
| CN105842338A (en) | Ultrasonic inner scanning imaging system and method for thick-walled tube total volume detection | |
| CN102403248B (en) | Nondestructive testing method of fault and dislocation defects of silicon polished wafers or epitaxial wafers | |
| KR101386593B1 (en) | Imaging method of pipe damage | |
| CN102520058A (en) | Metal magnetic memory detection method based on metal in-situ crystallography and magnetic domain characterization | |
| CN111665295A (en) | Solid material and semiconductor device internal defect detection method | |
| KR20020009431A (en) | A mandrel supported tensile test to evaluate weld bonding | |
| JP7143828B2 (en) | Slip detection method for silicon single crystal wafer | |
| CN114136552A (en) | Welding seam sealing detection tool and welding seam sealing detection method and system | |
| CN105424801B (en) | The method for sweeping detection for turbine casing electron beam weld water logging Ultrasonic C | |
| JP2019184415A (en) | Ultrasonic wave flaw detection method and device | |
| CN220960462U (en) | Soaking type air tightness detection device | |
| JPS5826240A (en) | Method and device for inspecting revention of air leakage of rim for tubeless tire | |
| CN117840157B (en) | A cleaning tool, device and method for scanning electron microscope aperture and sample | |
| CN111272865A (en) | Method for detecting defects of metal corrugated pipe based on array eddy current |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 071066 No. 6001, North Third Ring Road, Baoding City, Hebei Province Applicant after: Hebei Tongguang Semiconductor Co.,Ltd. Applicant after: Hebei Tongguang Technology Development Co.,Ltd. Address before: No. 6001, North Third Ring Road, Baoding City, Hebei Province Applicant before: HEBEI TONGGUANG CRYSTAL Co.,Ltd. Applicant before: Hebei Tongguang Technology Development Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211207 |
|
| RJ01 | Rejection of invention patent application after publication |