CN113755826A - Gallium oxide thin film deposition system and method based on corona charge - Google Patents
Gallium oxide thin film deposition system and method based on corona charge Download PDFInfo
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- 238000000889 atomisation Methods 0.000 claims abstract description 36
- 239000002243 precursor Substances 0.000 claims abstract description 33
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910001195 gallium oxide Inorganic materials 0.000 claims abstract description 27
- 239000012159 carrier gas Substances 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 22
- 239000003085 diluting agent Substances 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000443 aerosol Substances 0.000 claims abstract description 17
- 230000008021 deposition Effects 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 8
- 238000007599 discharging Methods 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 15
- 238000010278 pulse charging Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000007600 charging Methods 0.000 claims description 7
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 238000000427 thin-film deposition Methods 0.000 claims description 6
- 230000005684 electric field Effects 0.000 claims description 4
- 238000002474 experimental method Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 239000003570 air Substances 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 238000007736 thin film deposition technique Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 4
- 238000005137 deposition process Methods 0.000 abstract description 3
- 239000002699 waste material Substances 0.000 abstract description 2
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 239000012071 phase Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 2
- 229940075613 gadolinium oxide Drugs 0.000 description 2
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- Chemical & Material Sciences (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a gallium oxide film deposition system and a gallium oxide film deposition method based on corona charge.A substrate is placed in a substrate groove of a reaction area, and carrier gas and diluent gas are respectively introduced into a heating device from an atomization tank and a diluent gas passage to fill the reaction area; adding the precursor solution into an atomization tank; setting the working temperature of the heating device; setting the atomization frequency of an atomization device in an atomization tank to atomize the precursor-containing solution into aerosol precursors; and opening the pulse charge unit to form a space domain, discharging by a discharge needle, and enabling the aerosol precursor to collide with charged particles in a space ionization region, so that the aerosol precursor is charged and moves to a deposition region to deposit and grow to form a film. According to the invention, the pulse charge unit is additionally arranged on the existing Mist-CVD equipment, so that the waste phenomenon of raw materials in the film deposition process can be effectively reduced, and the deposition efficiency is increased.
Description
Technical Field
The invention belongs to the technical field of semiconductor material preparation, relates to a film deposition system and method, and particularly relates to a gallium oxide film deposition system and method based on corona charge.
Background
Due to the ultra-wide band gap of 4.9-5.3 eV, gallium oxide is widely concerned in the potential application of high-power electrons and ultraviolet photoelectrons. Meanwhile, the material is also a natural solar blind ultraviolet detection and deep ultraviolet transparent electrode material. As is well known, gallium oxide has five crystal phases of alpha, beta, gamma, delta and epsilon, wherein beta-Ga2O3Is the most thermodynamically stable phase and can mutually convert with other four crystal phases under certain conditions.
There are many methods for growing gallium oxide materials. Such as Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Atomic Layer Deposition (ALD), Halide Vapor Phase Epitaxy (HVPE), etc., the above methods are expensive and complex to operate.
However, since the gallium oxide thin film prepared by the Mist-CVD method is deposited in a tube furnace or a quartz chamber, in the natural deposition process, atomized particles move randomly in the whole reaction flow field and temperature field, and most of the atomized particles are lost outside the substrate, so that the raw material utilization rate is low and the deposition efficiency is poor.
Disclosure of Invention
In order to solve the problem of low utilization rate of raw materials in the existing growing gallium oxide film, the invention provides a gallium oxide film deposition system and a film deposition method based on corona charge.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
on one hand, the invention provides a gallium oxide thin film deposition system based on corona charge, which comprises an atomization tank, a pulse charge device, a connecting pipe and a heating device, wherein an ultrasonic atomization sheet and a precursor solution required by an experiment are arranged in the atomization tank, the atomization tank is connected with a carrier gas system, the pulse charge device comprises a charge pipe and a pulse charge unit which are mutually connected, the charge pipe is vertically communicated with the atomization tank, the charge pipe is a straight pipe, the upper outlet of the charge pipe is a fog outlet, a plurality of discharge needles are arranged in the pulse charge unit, the pulse charge unit is connected with the heating device through the connecting pipe, the middle of the heating device is a reaction area, the middle of the connecting hose is also connected with a dilution gas passage, the discharge needles are connected with the positive pole of an external electric field, and the grounding pole is arranged at the position of a substrate in the reaction area.
Preferably, the charging tube is a quartz glass tube, so that the fog column can be conveniently observed and the carrier gas can be conveniently adjusted.
On the other hand, the invention also provides a gallium oxide film deposition method, which adopts the gallium oxide film deposition system and comprises the following specific steps:
s1, placing a substrate in a substrate groove of a reaction area, and introducing carrier gas and diluent gas into a heating device from an atomization tank and a diluent gas passage respectively to fill the reaction area with the carrier gas and the diluent gas;
s2, adding the precursor solution into an atomization tank;
s3, setting the working temperature of a heating device to be 500-700 ℃; setting the atomization frequency of an atomization device in an atomization tank to atomize the precursor-containing solution into aerosol precursors;
and S4, opening the pulse charge unit to form a space domain, discharging by a discharge needle, and enabling the aerosol precursor to collide with charged particles in a space ionization region, so that the aerosol precursor is charged and moves to a deposition region to deposit and grow to form a film.
Preferably, in step S2, the precursor solution is an aqueous solution of gallium acetylacetonate or potassium chloride with a concentration of 0.01 to 0.1 mol/L.
Preferably, in step S1, the carrier gas is selected from one of oxygen, nitrogen and air, and the flow rate of the carrier gas is 1-6L/min.
Preferably, in step S1, the diluent gas is oxygen, and the flow rate of the carrier gas is 0.1-1L/min.
Preferably, in step S3, the frequency of the ultrasonic atomization is 1 to 3 MHz.
Preferably, in step S4, the pulse charging unit uses a pulse power frequency of 100 to 300Hz and a voltage of 100 to 300 kV.
The corona charging device is additionally arranged on the existing Mist-CVD equipment and comprises a pulse charging unit, wherein a Mist outlet is vertically arranged with an atomizing tank, a charging tube adopts a quartz glass tube, and a discharge needle adopts a plurality of needles. The prepared precursor solution is ultrasonically atomized by an ultrasonic atomizing sheet in an atomizing tank, enters a space domain from a fog outlet under the transportation of carrier gas, atomized liquid drops are electrified and move towards the substrate direction under the action of a discharge needle in a pulse charging unit, and a film is formed by deposition under the action of high temperature.
Compared with the prior art, the invention has the following beneficial effects:
(1) the charging tube adopts a quartz glass tube, and can observe a fog column at any time and adjust carrier gas;
(2) according to the invention, by additionally arranging the pulse charge unit, the phenomenon of raw material waste in the film deposition process can be effectively reduced, and the deposition efficiency is increased.
Drawings
FIG. 1 is a schematic diagram of a corona charge based gallium oxide thin film deposition system for use in the present invention; in fig. 1: 1. an atomizing tank; 2. a charge tube; 3. a pulse charging unit; 4. a connecting pipe; 5. a mist outlet; 6. a discharge needle; 7. a heating device; 8. a reaction zone; 9. a diluent gas passage.
Fig. 2 is a schematic diagram of the connection between the pulse charging device and the atomization tank in the invention.
Fig. 3 is a schematic view of the discharge needle of the present invention.
FIG. 4 is a schematic top view of the modeling of the present invention; in fig. 4: discharging needles; a fog outlet; ③ earth pole; and fourthly, a positive electrode.
FIG. 5 is a graph of the modeling results of the present invention.
FIG. 6 is an XRD pattern of a gallium oxide thin film sample prepared according to example 1 of the present invention.
Detailed Description
The invention is described in further detail below with reference to the figures and specific examples.
Example 1
As shown in fig. 1 and 2, the invention provides a gallium oxide thin film deposition system based on corona charging, which comprises an atomization tank 1, a pulse charging device, a connecting pipe 4 and a heating device 7. Be equipped with the required precursor solution of ultrasonic atomization piece and experiment in the atomizing jar 1, atomizing jar 1 is connected the carrier gas system, the pulse is charged the device and is included interconnect's the electric charge pipe 2 and the pulse is charged unit 3, the electric charge pipe 2 communicates with atomizing jar 1 is perpendicular, and the electric charge pipe 2 is the straight tube, the quartz glass pipe is adopted to electric charge pipe 2 priority, conveniently observes the fog column, adjusts the carrier gas. An outlet at the upper part of the charge tube 2 is a fog outlet 5, the fog outlet 5 is vertically communicated with the atomization tank 1, atomized particles are selected by gravity, and larger liquid drops which are not conveyed into the atomization tank 1 are returned. A plurality of discharge needles 6 are arranged in the pulse charging unit 3, as shown in fig. 3, the discharge needles 6 in the pulse charging unit 3 are multi-needle, and the space charge area is enlarged. The pulse charging unit 3 is connected with a heating device 7 through a connecting pipe 4, a reaction area 8 is arranged in the middle of the heating device 7, a diluent gas passage 9 is further connected in the middle of the connecting pipe 4, the position of the discharge needle 6 is connected with the anode of an external electric field, and the position of a substrate in the reaction area 8 is connected with a grounding electrode.
The invention also provides a gallium oxide film deposition method, which adopts the gallium oxide film deposition system based on corona charge and comprises the following specific steps:
s1, placing a clean c-surface sapphire substrate in a substrate groove of a reaction area 8, and introducing carrier gas and diluent gas into a heating device 7 from an atomizing tank 1 and a diluent gas passage 9 respectively to fill the reaction area 8 with the carrier gas and the diluent gas; in the embodiment, the carrier gas is nitrogen with the flow rate of 3L/min, the diluent gas is oxygen with the flow rate of 1L/min;
s2, adding 100mL of precursor solution (0.05 mol/L of acetylacetone gallium water solution) into an atomization tank (1);
s3, setting the working temperature of the heating device 7 to be 550 ℃; setting the ultrasonic atomization frequency of an ultrasonic atomization sheet in an atomization tank 1 to be 2.4MHz, and atomizing the precursor-containing solution into an aerosol precursor;
and S4, opening the pulse charge unit 3 to form a space domain, discharging by the discharge needle 6 to enable the aerosol precursor to collide with charged particles in the space ionization region, so that the aerosol precursor is charged and moves to a deposition region, and the aerosol precursor is deposited and grown for 30min to form a film.
The frequency of a pulse power supply used by the pulse charging unit 3 is 100-300 Hz, and the voltage is 100-300 kV.
Before growing the gallium oxide film, the substrate needs to be subjected to surface cleaning treatment: and ultrasonically cleaning the sapphire substrate in acetone, ethanol and deionized water for 10-20min in sequence, and finally drying the sapphire substrate by using nitrogen.
Modeling simulation is carried out on the experiment before the gallium oxide film is grown, as shown in fig. 4, the discharge needle (i) is positioned at the fog outlet (ii), and the discharge needle (i) is arranged between the positive electrode (ii) and the ground electrode (iii), wherein the positive electrode of the external electric field and the discharge needle have the same polarity voltage, and the simulation experiment result is as shown in fig. 5, the liquid drop deflects, and moves towards the conductive substrate after being electrified.
XRD measurement was performed on the gadolinium oxide film prepared in example 1, and as shown in fig. 6, there were three larger peaks at 19 °, 38.5 ° and 61 ° in addition to the peak at 42 ° of the sapphire substrate. This confirms that the film is composed of gallium oxide in the beta phase and is-201 oriented.
Example 2
A gallium oxide film deposition method adopts the gallium oxide film deposition system based on corona charging, and comprises the following specific steps:
s1, placing a c-surface sapphire substrate in a substrate groove of a reaction area 8, and introducing carrier gas and diluent gas into a heating device 7 from an atomizing tank 1 and a diluent gas passage 9 respectively to fill the reaction area 8 with the carrier gas and the diluent gas; in the embodiment, air is selected as carrier gas, the flow rate is 5L/min, oxygen is selected as diluent gas, and the flow rate of the carrier gas is 0.1L/min;
s2, adding 100mL of precursor solution (potassium chloride aqueous solution with the concentration of 0.1 mol/L) into the atomization tank 1;
s3, setting the working temperature of the heating device 7 to be 550 ℃; setting the ultrasonic atomization frequency of an ultrasonic atomization sheet in an atomization tank 1 to be 2.4MHz, and atomizing the precursor-containing solution into an aerosol precursor;
and S4, opening the pulse charge unit 3 to form a space domain, discharging by the discharge needle 6 to enable the aerosol precursor to collide with charged particles in the space ionization region, so that the aerosol precursor is charged and moves to a deposition region, and the aerosol precursor is deposited and grown for 30min to form a film.
XRD measurement was performed on the gadolinium oxide thin film prepared in example 2, and the result was similar to the XRD pattern of example 1.
Claims (8)
1. The utility model provides a gallium oxide film deposition system based on corona charge, its characterized in that, including atomizing jar (1), pulse charge device, connecting pipe (4), heating device (7), be equipped with ultrasonic atomization piece and the required precursor solution of experiment in atomizing jar (1), atomizing jar (1) is connected the carrier gas system, pulse charge device includes interconnect's charged pipe (2) and pulse charge unit (3), charged pipe (2) and atomizing jar (1) are perpendicular to be communicated, and charged pipe (2) are the straight tube, and the export of charged pipe (2) upper portion is for going out fog mouth (5), be equipped with a plurality of discharge needles (6) in the pulse charge unit (3), pulse charge unit (3) are passed through connecting pipe (4) and are linked to each other with heating device (7), are reaction zone (8) in the middle of heating device (7), and connecting pipe (4) intermediate position still is connected with dilution gas passageway (9), the position of the discharge needle is connected with the anode of an external electric field, and the position of the substrate in the reaction area (8) is connected with the ground electrode.
2. The corona charged based gallium oxide thin film deposition system according to claim 1, wherein the charging tube (2) is a quartz glass tube.
3. The gallium oxide thin film deposition method is characterized in that the gallium oxide thin film deposition system based on corona charge of claim 1 or 2 is adopted, and the specific steps are as follows:
s1, placing a substrate in a substrate groove of a reaction area (8), and introducing carrier gas and diluent gas into a heating device (7) from an atomization tank (1) and a diluent gas passage (9) respectively to fill the reaction area (8) with the carrier gas and the diluent gas;
s2, adding the precursor solution into the atomization tank (1);
s3, setting the working temperature of the heating device (7) to be 500-700 ℃; setting the atomization frequency of an atomization device in the atomization tank (1) to atomize the precursor-containing solution into aerosol precursors;
and S4, opening the pulse charge unit (3) to form a space domain, discharging by a discharge needle, and enabling the aerosol precursor to collide with charged particles in a space ionization region, so that the aerosol precursor is charged and moves to a deposition region to deposit and grow to form a thin film.
4. The method of claim 3, wherein in step S2, the precursor solution is an aqueous solution of gallium acetylacetonate or potassium chloride with a concentration of 0.01-0.1 mol/L.
5. The method of claim 3, wherein in step S1, the carrier gas is selected from oxygen, nitrogen, and air, and the flow rate of the carrier gas is 1-6L/min.
6. The method of claim 3, wherein in step S1, the diluent gas is oxygen, and the carrier gas flow rate is 0.1-1L/min.
7. The method of claim 3, wherein in step S3, the frequency of ultrasonic atomization is 1-3 MHz.
8. The method of claim 3, wherein in step S4, the pulse charging unit (3) uses a pulse power frequency of 100-300 Hz and a voltage of 100-300 kV.
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| CN202110985560.7A CN113755826A (en) | 2021-08-26 | 2021-08-26 | Gallium oxide thin film deposition system and method based on corona charge |
| PCT/CN2021/118190 WO2023024188A1 (en) | 2021-08-26 | 2021-09-14 | Corona charge-based gallium oxide thin film deposition system and thin film deposition method |
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| CN112111783A (en) * | 2020-10-14 | 2020-12-22 | 天津工业大学 | Electrostatic atomization chemical vapor deposition gallium oxide film system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113088925B (en) * | 2021-03-12 | 2022-03-25 | 江苏师范大学 | Preparation of ZnS doped alpha-Ga by Mist-CVD chemical vapor deposition method2O3Method for making thin film |
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- 2021-08-26 CN CN202110985560.7A patent/CN113755826A/en active Pending
- 2021-09-14 WO PCT/CN2021/118190 patent/WO2023024188A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997021848A1 (en) * | 1995-12-14 | 1997-06-19 | Imperial College Of Science, Technology & Medicine | Film or coating deposition and powder formation |
| US20020106452A1 (en) * | 1999-01-15 | 2002-08-08 | Kwang-Leong Choy | Material fabrication |
| CN105986246A (en) * | 2015-01-29 | 2016-10-05 | Flosfia株式会社 | Apparatus and method for forming film |
| CN109056066A (en) * | 2018-09-05 | 2018-12-21 | 南京大学 | A kind of system of ultrasonic wave added mist phase transport chemical vapor deposition growing gallium oxide |
| CN112111783A (en) * | 2020-10-14 | 2020-12-22 | 天津工业大学 | Electrostatic atomization chemical vapor deposition gallium oxide film system |
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