CN113745178B - A heat dissipation base plate for high power density semiconductor device and assembly method thereof - Google Patents
A heat dissipation base plate for high power density semiconductor device and assembly method thereof Download PDFInfo
- Publication number
- CN113745178B CN113745178B CN202110976612.4A CN202110976612A CN113745178B CN 113745178 B CN113745178 B CN 113745178B CN 202110976612 A CN202110976612 A CN 202110976612A CN 113745178 B CN113745178 B CN 113745178B
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- Prior art keywords
- plate
- pin
- welding
- base plate
- fin
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 78
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 5
- 238000012858 packaging process Methods 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
The invention belongs to the technical field of semiconductor devices, and relates to a heat dissipation base plate of a high-power-density semiconductor device and an assembly method thereof. The heat dissipation base plate includes: the Pin-fin plate and the welding bottom plate which are mutually independent are detachably connected through a fastener, and a buffer layer is arranged between the Pin-fin plate and the welding bottom plate. According to the invention, the Pin-fin plate and the welding bottom plate are designed into mutually independent structures, and the welding plate is directly contacted with the heating plate during welding, so that the phenomenon of uneven contact surface caused by deformation of the Pin-fin needle in the processing process is eliminated, and the welding quality is improved; only the radian of the welding plate is ensured during welding, the radian requirement on the Pin-Fin plate is low, and compared with the original integrated Pin-Fin plate, the manufacturing process difficulty is reduced; in addition, the module packaging process is compatible with the existing welding process, additional tools are not needed to be added, and the process manufacturing cost is not increased additionally.
Description
Technical Field
The invention belongs to the technical field of semiconductor devices, relates to a heat dissipation base plate of a semiconductor device, and particularly relates to a heat dissipation base plate of a high-power-density semiconductor device and an assembly method thereof.
Background
Along with the continuous promotion of IGBT module power density, the heat dissipation bottom plate is as the main heat dissipation passageway of single face heat dissipation formula IGBT module, and the heat dispersion of bottom plate is vital. The Pin-fin bottom plate is used as one of the current research hot, and is directly contacted with the cooling liquid, so that the heat dissipation capacity of the IGBT module can be greatly improved.
The main disadvantage of the current main current Pin-fin base plate in the market is that the Pin-fin base plate is an integrated base plate, see fig. 1, i.e. the Pin-fin needle and the welding plate are integrated, and the main disadvantage of the base plate is that: 1) Structurally, as the welding plate and the Pin-fin needle are integrated, the requirement of the welding quality on the consistency of the Pin-fin needle is very high in the later application process, and the welding quality is difficult to ensure in the later processing; 2) In the processing technology, the existing Pin-fin bottom plate is complex in processing and high in difficulty, and the requirement on the consistency of Pin-fin needles is very high, so that the cost of the Pin-fin integrated bottom plate is greatly increased; 3) In the welding application, as the Pin-fin needle is arranged on the back surface of the welding plate, the contact area between the Pin-fin needle and the heating plate is small during welding, the heat transfer performance is low, and the welding quality is affected.
Therefore, a new bottom plate structure is urgently needed, and reliability, high efficiency and good heat dissipation characteristics of the packaging process are taken into consideration, so as to solve a series of problems in the high-power density IGBT module packaging process and the application process.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a radiating bottom plate of a high-power-density semiconductor device and an assembly method thereof, which are capable of considering the reliability, the high efficiency and the good radiating characteristic of a high-power-density IGBT module packaging process.
In order to achieve the above purpose, the present invention provides the following technical solutions:
In one aspect, the present invention provides a heat dissipating substrate for a high power density semiconductor device, comprising: the Pin-fin plate and the welding bottom plate which are mutually independent are detachably connected through a fastener, and a buffer layer is arranged between the Pin-fin plate and the welding bottom plate.
Further, the buffer layer is made of a heat conducting material.
Further, the upper surface of the Pin-fin plate is provided with a placement area for installing a welded bottom plate.
Further, the total thickness of the welding bottom plate and the buffer layer is the same as the depth of the placement area.
Further, a plurality of Pin-fin needles are uniformly distributed on the lower surface of the Pin-fin plate.
Further, a plurality of Pin-fin needles and the Pin-fin plate are in an integrated structure.
Further, the Pin-fin plate is connected with the welding bottom plate through screws, and mounting holes matched with the screws are respectively formed in the Pin-fin plate, the welding bottom plate and the buffer layer.
Further, the welding bottom plate is rectangular.
Further, the number of the screws is four, and the four screws are uniformly distributed at four corners of the rectangular welding bottom plate.
In another aspect, the present invention provides an assembling method based on the heat dissipation base plate as described above, specifically including the following steps:
Sequentially placing the sub-modules, the soldering lugs and the welding bottom plate from top to bottom to finish the assembly of the to-be-welded assembly and the welding bottom plate;
placing the assembled welding bottom plate on a preset tray, and placing the tray on a heating plate for welding;
after the welding is finished, the welding plate and the Pin-fin plate are installed through a fastener.
Compared with the prior art, the technical scheme provided by the invention has the following beneficial effects: the Pin-fin plate and the welding bottom plate are designed into mutually independent structures, and the welding plate is directly contacted with the heating plate during welding, so that the phenomenon of uneven contact surface caused by deformation of the Pin-fin needle in the processing process is eliminated, and the welding quality is improved; only the welding plate and the heating plate are required to be in close contact during welding, the radian requirement on the Pin-Fin plate is low, and compared with the original integrated Pin-Fin plate, the manufacturing process difficulty is greatly reduced; in addition, the Pin-fin plate and the welding bottom plate are designed into mutually independent structures, so that the welding bottom plate is compatible with the existing welding process during module packaging, additional tools are not required to be added, and the process manufacturing cost is not increased additionally; the tolerance of deformation error of the Pin-fin needle is increased, so that the yield is improved, and the cost of the Pin-fin plate is indirectly reduced; and finally, designing the Pin-Fin plate and the welding bottom plate into mutually independent structures, wherein the welding plate and the Pin-Fin plate can be made of materials which are more matched with other material thermal characteristic parameters of the IGBT module and have small deformation, and the Pin-Fin plate can be made of metal materials with low cost and quick heat conduction.
Drawings
FIG. 1 is a block diagram of a prior art integrated Pin-fin base plate;
Fig. 2 is a structural exploded view of a heat dissipating base plate of a high power density semiconductor device according to the present invention;
FIG. 3 is a diagram of a welding process of a component to be welded and a welding bottom plate provided by the invention;
fig. 4 is a flow chart of the installation of the welded bottom plate and the Pin-fin plate after the welding is completed.
Wherein: 1. welding plates; 2. pin-fin needle; 3. pin-fin plate; 4. a buffer layer; 5. a sub-module; 6. a soldering lug; 7. and (5) heating the plate.
Detailed Description
The invention is described in further detail below with reference to the attached drawings and examples:
Examples
In one aspect, referring to fig. 2, the present invention provides a heat dissipating substrate for a high power density semiconductor device, comprising: the Pin-fin plate 3 and the welding bottom plate 1 which are mutually independent are detachably connected through a fastener, and a buffer layer 4 is arranged between the Pin-fin plate 3 and the welding bottom plate 1.
Further, the buffer layer 4 is made of a heat conducting material, so that the Pin-fin plate 3 and the welding bottom plate 1 are tightly matched while the heat resistance is reduced.
Further, the upper surface of the Pin-fin plate 3 is provided with a placement area for mounting the soldering floor plate 1.
Further, the total thickness of the welded bottom plate 1 and the buffer layer 4 is the same as the depth of the placement area.
Further, a plurality of Pin-fin needles 2 are uniformly distributed on the lower surface of the Pin-fin plate 3.
Further, a plurality of Pin-fin needles 2 and Pin-fin plates 3 are in an integrated structure.
Further, the Pin-fin plate 3 and the welding bottom plate 1 are connected through screws, and mounting holes matched with the screws are respectively formed in the Pin-fin plate 3, the welding bottom plate 1 and the buffer layer 4.
Further, the welding bottom plate 1 is rectangular.
Further, the number of the screws is four, and the four screws are uniformly distributed at four corners of the rectangular welding bottom plate 1. The number of the screws can be determined according to the size of the welded bottom plate 1, so that the Pin-fin plate 3 and the welded bottom plate 1 are firmly connected.
In another aspect, the present invention provides a method for assembling a heat dissipating substrate of a high power density semiconductor device, as shown in fig. 3 to 4, comprising the steps of:
The sub-module 5, the welding lug 6 and the welding bottom plate 1 are placed in sequence from top to bottom to complete the assembly of the component to be welded and the welding bottom plate 1;
placing the assembled welding bottom plate 1 on a preset tray, and placing the tray on a heating plate 7 for welding;
After the welding is completed, the welding plate and the Pin-fin plate 3 are mounted through fasteners.
In summary, the structures of the welded bottom plate 1 and the Pin-Fin plate 3 are mutually independent, so that the welding quality can be greatly improved, the process manufacturing cost is reduced, the product production qualification rate is improved, the materials of the welded plate and the Pin-Fin plate can be independently selected, the cost and the performance are considered, and finally, the cost of the high-efficiency radiating bottom plate is reduced.
The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention.
It will be understood that the invention is not limited to what has been described above and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110976612.4A CN113745178B (en) | 2021-08-24 | 2021-08-24 | A heat dissipation base plate for high power density semiconductor device and assembly method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110976612.4A CN113745178B (en) | 2021-08-24 | 2021-08-24 | A heat dissipation base plate for high power density semiconductor device and assembly method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113745178A CN113745178A (en) | 2021-12-03 |
| CN113745178B true CN113745178B (en) | 2024-11-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110976612.4A Active CN113745178B (en) | 2021-08-24 | 2021-08-24 | A heat dissipation base plate for high power density semiconductor device and assembly method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113745178B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001077485A (en) * | 1999-08-31 | 2001-03-23 | Kyocera Corp | Joint structure of ceramic substrate and metal radiator |
| CN109309062A (en) * | 2017-07-27 | 2019-02-05 | 比亚迪股份有限公司 | A kind of heat dissipation element and preparation method thereof and IGBT mould group |
| CN110993573A (en) * | 2019-11-15 | 2020-04-10 | 西安中车永电电气有限公司 | Novel heat dissipation bottom plate and use method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007036064A (en) * | 2005-07-28 | 2007-02-08 | Kyocera Mita Corp | Heat sink |
| DE102009002993B4 (en) * | 2009-05-11 | 2012-10-04 | Infineon Technologies Ag | Power semiconductor module with spaced circuit carriers |
| CN102881668A (en) * | 2012-10-16 | 2013-01-16 | 西安永电电气有限责任公司 | IGBT (Insulated Gate Bipolar Translator) module radiating structure |
| JP5788584B2 (en) * | 2013-02-28 | 2015-09-30 | 新電元工業株式会社 | Electronic module and manufacturing method thereof |
| CN212517183U (en) * | 2020-08-21 | 2021-02-09 | 烟台台芯电子科技有限公司 | High-efficient heat radiation structure of IGBT module |
| CN212783426U (en) * | 2020-09-02 | 2021-03-23 | 株洲中车时代电气股份有限公司 | Heat radiation structure and IGBT power module for rail transit |
-
2021
- 2021-08-24 CN CN202110976612.4A patent/CN113745178B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001077485A (en) * | 1999-08-31 | 2001-03-23 | Kyocera Corp | Joint structure of ceramic substrate and metal radiator |
| CN109309062A (en) * | 2017-07-27 | 2019-02-05 | 比亚迪股份有限公司 | A kind of heat dissipation element and preparation method thereof and IGBT mould group |
| CN110993573A (en) * | 2019-11-15 | 2020-04-10 | 西安中车永电电气有限公司 | Novel heat dissipation bottom plate and use method thereof |
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| Publication number | Publication date |
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| CN113745178A (en) | 2021-12-03 |
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