CN113735053A - Micro-electromechanical infrared sensor and preparation method thereof - Google Patents
Micro-electromechanical infrared sensor and preparation method thereof Download PDFInfo
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- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
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- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- G01J5/44—Radiation pyrometry, e.g. infrared or optical thermometry using extension or expansion of solids or fluids using change of resonant frequency, e.g. of piezoelectric crystals
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Abstract
本发明属于微机电传感器技术领域，公开了一种微机电红外传感器及其制备方法。微机电红外传感器包括衬底硅片、夹层敏感单元、薄膜封装层和金属焊盘，薄膜封装层与衬底硅片构成真空腔室，夹层敏感单元密封于真空腔室中，夹层敏感单元包括从下到上次依次堆叠的金属红外反射层、压电红外干涉层和红外吸收层。本发明利用夹层敏感单元进行红外探测，夹层敏感单元为光学干涉腔结构，能够在增强红外光的吸收率的同时实现目标红外波长的高选择性。该传感器采用薄膜封装的方式实现了真空密封，无需后续复杂的真空封装工艺，降低了器件的设计和加工的复杂度，同时减小了器件尺寸，降低了成本，提高了器件的长期稳定性和可靠性。
The invention belongs to the technical field of microelectromechanical sensors, and discloses a microelectromechanical infrared sensor and a preparation method thereof. The MEMS infrared sensor includes a substrate silicon wafer, an interlayer sensitive unit, a thin film encapsulation layer and a metal pad. The thin film encapsulation layer and the substrate silicon wafer form a vacuum chamber. The interlayer sensitive unit is sealed in the vacuum chamber. The interlayer sensitive unit includes from Down to the metal infrared reflection layer, piezoelectric infrared interference layer and infrared absorption layer stacked in sequence. The invention utilizes the interlayer sensitive unit for infrared detection, and the interlayer sensitive unit is an optical interference cavity structure, which can enhance the absorption rate of infrared light and realize high selectivity of the target infrared wavelength. The sensor is vacuum-sealed by thin-film encapsulation, which eliminates the need for subsequent complex vacuum encapsulation processes, reduces the complexity of device design and processing, reduces device size, reduces cost, and improves the long-term stability and reliability of the device. reliability.
Description
Technical Field
The invention belongs to the technical field of micro-electromechanical sensors, and particularly relates to a micro-electromechanical infrared sensor and a preparation method thereof.
Background
The infrared detector is a device for converting incident infrared radiation signals into electric signals to be output, is the core of an infrared complete machine system, and is a key component for detecting, identifying and analyzing infrared information. With the development of science and technology, infrared detection technology has wide application in military, industry, traffic, security monitoring, meteorology, medicine and other industries. Micro-Mechanical infrared detectors (MEMS) fabricated by Micro-Electro-Mechanical systems (MEMS) technology have the advantages of small size, low power consumption, and good compatibility with CMOS (Complementary Metal Oxide Semiconductor) circuit fabrication processes, and the like, and the demand in various fields is increasing day by day.
Infrared detectors can be classified into thermal infrared detectors and photon infrared detectors according to detection mechanisms. The thermal infrared detector is also called as an uncooled infrared detector, and the working principle of the thermal infrared detector is to convert received infrared radiation into heat energy to cause the temperature of an infrared sensitive element to rise, and then measure the magnitude of an infrared radiation signal by measuring the temperature rise. The photon infrared detector utilizes the photon effect of semiconductor material to detect infrared, and after the detector absorbs photons, the detector changes the electronic state, thereby causing the phenomena of photovoltaics or photoconduction, etc. Compared with a photon detection infrared sensor, the thermal detection infrared sensor has the advantages of small volume, light weight and no need of refrigeration, but has the defects of low sensitivity and slow response time, and the application of the thermal detection infrared sensor in high requirements and complex environments is limited.
The uncooled infrared detector module generally comprises an infrared sensitive element and an infrared filtering module. At present, a common chip packaging process is mainly adopted for a non-refrigeration infrared detector, namely, a wafer containing an infrared sensitive element is firstly scribed, then a bare chip containing the infrared sensitive element obtained by scribing is placed on a convex metal base (generally a TO type), the bare chip is connected with a pin through methods such as gold wire ball bonding and the like, and finally a pipe cap with an optical filter is welded on the base TO complete the integral manufacture and packaging of a non-refrigeration infrared detector module.
The traditional uncooled infrared detector has the following problems: firstly, an infrared sensitive element in a non-refrigeration infrared detector generally adopts a suspension structure to carry out heat insulation treatment, so that the suspension microstructure is very easy to damage in the scribing process, and the yield is difficult to improve; secondly, the detector generally adopts chip-scale packaging, so that the packaging efficiency is low; thirdly, the optical filter of the detector is bonded on the tube cap through glue, and the tube cap and the base are welded to complete the air-tight packaging of the detector, so that the vacuum degree is low, and the heat convection has negative influence on the performance of the detector; fourthly, because the cost of the metal tube shell is generally higher, the cost of the non-refrigeration infrared detector manufactured by common packaging is also difficult to reduce.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a micro-electromechanical infrared sensor and a preparation method thereof.
The invention provides a micro-electromechanical infrared sensor, comprising: the device comprises a substrate silicon chip, an interlayer sensitive unit, a thin film packaging layer and a metal bonding pad;
the interlayer sensitive unit is positioned above the substrate silicon wafer, and the film packaging layer is positioned above the interlayer sensitive unit; the thin film packaging layer and the substrate silicon wafer form a vacuum chamber, and the interlayer sensitive unit is sealed in the vacuum chamber;
the interlayer sensitive unit comprises a metal infrared reflecting layer, a piezoelectric infrared interference layer and an infrared absorption layer which are sequentially stacked from bottom to top; the interlayer sensitive unit is used for selectively absorbing target infrared light;
the metal infrared reflection layer is used as a bottom electrode layer, the infrared absorption layer is used as a top electrode layer, and the bottom electrode layer and the top electrode layer are connected to the metal bonding pad through electric wiring.
Preferably, the micro-electromechanical thermal infrared detector detects the infrared light signal by at least one of piezoelectric resonance and pyroelectric.
Preferably, when the micro-electromechanical type infrared detector detects an infrared signal in a piezoelectric resonance mode, the interlayer sensitive unit is excited to resonate by the bottom electrode layer and the top electrode layer, and infrared radiation information is obtained by measuring the change of resonance frequency of the piezoelectric infrared interference layer caused by temperature rise due to infrared radiation absorption;
when the micro-electro-thermal infrared detector detects an infrared signal in a pyroelectric manner, infrared radiation information is obtained by detecting an induced charge signal accumulated on the surface, which is obtained by the temperature rise of the piezoelectric infrared interference layer due to the absorption of infrared radiation, by utilizing the pyroelectric characteristic of the piezoelectric infrared interference layer.
Preferably, the thin film encapsulation layer comprises a support layer and an encapsulation layer; the packaging layer is positioned above the supporting layer;
the packaging layer comprises a first Bragg reflector, a second Bragg reflector and an intermediate transition layer; the first Bragg reflector is used for enhancing the reflection of electromagnetic waves smaller than the wavelength of target infrared light; the second Bragg reflector is used for enhancing the reflection of electromagnetic waves larger than the wavelength of target infrared light; the intermediate transition layer is located between the first bragg reflector and the second bragg reflector.
Preferably, the preparation material of the supporting layer is polysilicon; the first Bragg reflector and the second Bragg reflector are both periodic stacked thin films formed by alternately depositing amorphous silicon and silicon nitride; the preparation material of the packaging layer adopts amorphous silicon or silicon nitride.
Preferably, the metal infrared reflecting layer adopts a whole-surface structure or a differential electrode structure; the differential electrode structure is an interdigital electrode structure or a planar electrode structure.
Preferably, the structure of the interlayer sensing unit is one of a cuboid, a disc, a ring, a cantilever beam, a clamped beam or a tuning fork structure.
Preferably, the thickness of the metal infrared reflecting layer is more than 100 nanometers, and the metal infrared reflecting layer is used for reflecting infrared light waves of all wave bands; the thickness of the piezoelectric infrared interference layer is one fourth of the wavelength of the target infrared light; the sheet resistance of the infrared absorption layer is the same as the vacuum wave impedance of the electromagnetic wave.
Preferably, the preparation material of the metal infrared reflecting layer is selected from one of aluminum, gold, platinum or molybdenum, the preparation material of the piezoelectric infrared interference layer is aluminum nitride or lead zirconate titanate, and the preparation material of the infrared absorption layer is titanium nitride.
On the other hand, the invention provides a preparation method of the micro-electromechanical infrared sensor, which comprises the following steps:
step 9, continuously depositing a silicon oxide sacrificial layer on the surface of the silicon oxide sacrificial layer, and etching a sealing through hole reaching the upper surface of the piezoelectric infrared interference layer on the silicon oxide sacrificial layer;
and step 13, etching an electrical lead-out through hole on the surface of the packaging layer to the metal pad.
One or more technical schemes provided by the invention at least have the following technical effects or advantages:
the micro-electromechanical infrared sensor comprises a substrate silicon chip, an interlayer sensitive unit, a metal bonding pad and a film packaging layer, wherein the interlayer sensitive unit is positioned above the substrate silicon chip, and the film packaging layer is positioned above the interlayer sensitive unit; the thin film packaging layer and the substrate silicon wafer form a vacuum chamber, and the interlayer sensitive unit is sealed in the vacuum chamber; the interlayer sensitive unit comprises a metal infrared reflecting layer, a piezoelectric infrared interference layer and an infrared absorption layer which are sequentially stacked from bottom to top; the interlayer sensitive unit is used for selectively absorbing target infrared light; the metal infrared reflecting layer serves as a bottom electrode layer, the infrared absorbing layer serves as a top electrode layer, and the bottom electrode layer and the top electrode layer are connected to the metal pad through electric wiring. According to the invention, the interlayer sensing unit is used for infrared detection, and the interlayer sensing unit is of an optical interference cavity structure, so that the high selectivity of target infrared wavelength can be realized while the absorption rate of infrared light is enhanced. On the other hand, the preparation method of the micro-electromechanical infrared sensor provided by the invention realizes vacuum sealing by adopting a film packaging mode, does not need a subsequent complex vacuum packaging process, reduces the complexity of design and processing of the device, reduces the size of the device, reduces the cost and improves the long-term stability and reliability of the device.
Drawings
Fig. 1 is a schematic cross-sectional view corresponding to process step 1 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view corresponding to process step 2 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 3 is a schematic cross-sectional view corresponding to process step 3 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 4 is a schematic cross-sectional view corresponding to process step 4 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 5 is a schematic cross-sectional view corresponding to process step 5 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 6 is a schematic cross-sectional view corresponding to process step 6 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 7 is a schematic cross-sectional view corresponding to process step 7 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 8 is a schematic cross-sectional view corresponding to process step 8 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 9 is a schematic cross-sectional view corresponding to process step 9 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 10 is a schematic cross-sectional view corresponding to process step 10 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 11 is a schematic cross-sectional view corresponding to process step 11 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 12 is a schematic cross-sectional view corresponding to process step 12 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
fig. 13 is a schematic cross-sectional view corresponding to process step 13 in a method for manufacturing a micro-electromechanical infrared sensor according to an embodiment of the present invention;
FIG. 14 is a schematic structural cross-sectional view of a sandwich sensing unit in a micro-electromechanical infrared sensor according to an embodiment of the present invention;
FIG. 15 is a cross-sectional view of an encapsulation layer;
FIG. 16 is a schematic diagram of a metal IR reflecting layer with an interdigital electrode structure;
fig. 17 is a schematic diagram of a planar electrode structure of the metallic infrared reflective layer.
The structure comprises a substrate silicon wafer 1, a silicon oxide layer 2, a metal infrared reflecting layer 3, a piezoelectric infrared interference layer 4, an infrared absorption layer 5, a silicon oxide sacrificial layer 6, a metal bonding pad 7, a supporting layer 8, a release hole 9, a silicon nitride layer 10, an amorphous silicon layer 11, an electrical lead-out through hole 12, an interlayer sensitive unit 13, a packaging layer 14, a first Bragg reflector 15 and a second Bragg reflector 16.
Detailed Description
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
Example 1:
Wherein the thin film encapsulation layer comprises a support layer and an encapsulation layer; the packaging layer is positioned above the supporting layer. The packaging layer comprises a first Bragg reflector, a second Bragg reflector and an intermediate transition layer; the first Bragg reflector is used for enhancing the reflection of electromagnetic waves smaller than the wavelength of target infrared light; the second Bragg reflector is used for enhancing the reflection of electromagnetic waves larger than the wavelength of target infrared light; the intermediate transition layer is located between the first bragg reflector and the second bragg reflector. Bragg reflectors are periodically stacked thin films of two semiconductor or dielectric materials deposited alternately.
The metal infrared reflecting layer adopts a whole surface structure or a differential electrode structure; the differential electrode structure is an interdigital electrode structure or a planar electrode structure.
The sandwich sensitive unit is in one of a cuboid structure, a disc structure, a circular ring structure, a cantilever beam structure, a clamped beam structure or a tuning fork structure.
The thickness of the metal infrared reflecting layer is more than 100 nanometers, and the metal infrared reflecting layer is used for reflecting infrared light waves of all wave bands; the thickness of the piezoelectric infrared interference layer is one fourth of the wavelength of the target infrared light; the sheet resistance of the infrared absorption layer is the same as the vacuum wave impedance of the electromagnetic wave, and the thickness of the infrared absorption layer can be determined according to the sheet resistance.
The preparation material of the metal infrared reflecting layer can be selected from metal materials such as aluminum (Al), gold (Au), platinum (Pt) or molybdenum (Mo) and the like, the preparation material of the piezoelectric infrared interference layer can be selected from piezoelectric materials such as aluminum nitride (AlN) or lead zirconate titanate (PZT), and the preparation material of the infrared absorption layer can be titanium nitride (TiN).
The preparation material of the supporting layer can adopt polysilicon; the first Bragg reflector and the second Bragg reflector can be periodic stacked films formed by alternately depositing amorphous silicon and silicon nitride; the preparation material of the packaging layer can adopt amorphous silicon (alpha-Si) or silicon nitride (SiN)x)。
The micro-electromechanical thermal infrared detector can detect infrared signals by adopting two modes of piezoelectric resonance and pyroelectric. When an infrared light signal is detected in a piezoelectric resonance mode, the interlayer sensitive unit is excited to resonate through the bottom electrode layer and the top electrode layer, and infrared radiation information is obtained by measuring the change of resonance frequency of the piezoelectric infrared interference layer caused by temperature rise due to the fact that infrared radiation is absorbed. When the infrared signal is detected in a pyroelectric way, the infrared radiation information is obtained by detecting the induced charge signal accumulated on the surface, which is obtained by the temperature rise of the piezoelectric infrared interference layer due to the absorption of infrared radiation, by utilizing the pyroelectric characteristic of the piezoelectric infrared interference layer.
Example 2:
step 9, continuously depositing a silicon oxide sacrificial layer on the surface of the silicon oxide sacrificial layer, and etching a sealing through hole reaching the upper surface of the piezoelectric infrared interference layer on the silicon oxide sacrificial layer;
and step 13, etching an electrical lead-out through hole on the surface of the packaging layer to the metal pad.
Example 2 is further illustrated below with reference to specific process methods.
(1) As shown in fig. 1, a deep reactive ion etching method is adopted to etch a cavity and a support pillar structure on the front surface of a substrate silicon wafer 1;
(2) as shown in fig. 2, a silicon oxide layer 2 is prepared on the front side of the substrate silicon wafer 1 by thermal oxidation or chemical vapor deposition; thinning the silicon oxide layer 2 to the upper surface position of the supporting column by adopting a chemical mechanical polishing method;
(3) as shown in fig. 3, depositing a metal infrared reflection layer 3 on the surface of the silicon oxide layer by physical vapor deposition, etching the metal infrared reflection layer 3 by using a patterned photolithography and etching method, and fabricating a bottom electrode structure to form a bottom electrode layer;
(4) as shown in fig. 4, a piezoelectric infrared interference layer 4 is prepared on the surface of the bottom electrode layer by using a physical vapor deposition method such as magnetron sputtering, and an infrared absorption layer 5 is prepared on the surface of the piezoelectric infrared interference layer by using an Atomic Layer Deposition (ALD) technique;
(5) as shown in fig. 5, etching the infrared absorption layer 5 by using a patterned photolithography and etching method, fabricating a top electrode layer, and depositing a silicon oxide sacrificial layer 6 on the surface of the top electrode layer;
(6) as shown in fig. 6, a through hole (denoted as a first through hole) connected to the bottom electrode layer below the silicon oxide sacrificial layer 6 is etched on the silicon oxide sacrificial layer by using a patterned photolithography and etching technique;
(7) as shown in fig. 7, depositing a metal layer on the surface of the silicon oxide sacrificial layer 6 and the first through hole, and etching the metal layer by using a patterned photolithography and etching technique, leaving the metal layer at the first through hole as the metal pad 7;
(8) as shown in fig. 8, etching a through hole (denoted as a second through hole) on the surface of the silicon oxide sacrificial layer 6 to the position of the silicon oxide layer 2 at the cavity of the substrate silicon wafer by using a patterned lithography and deep reactive ion etching method;
(9) as shown in fig. 9, a silicon oxide sacrificial layer 6 is deposited on the surface of the silicon oxide sacrificial layer 6 by chemical vapor deposition, and a through hole is etched and sealed on the surface of the silicon oxide sacrificial layer 6 to the upper surface of the piezoelectric infrared interference layer 4 by using a patterned photolithography and etching method;
(10) as shown in fig. 10, depositing a supporting layer 8 structure of polysilicon on the surface of the silicon oxide sacrificial layer 6 by using a chemical vapor deposition method, and etching release holes 9 on the surface of the supporting layer 8 to the upper surface of the silicon oxide sacrificial layer 6 by using a patterned photolithography and etching method;
(11) as shown in fig. 11, etching off the silicon oxide sacrificial layer 6 in the area of the interlayer sensitive unit 13 and the silicon oxide layer 2 under the interlayer sensitive unit 13 through the release holes 9 by using a gas phase chemical etching medium to form a resonant cavity and release the interlayer sensitive unit 13;
(12) as shown in fig. 12, a silicon nitride layer 10 and an amorphous silicon layer 11 are alternately deposited on the surface of the support layer 8 by using methods such as molecular beam epitaxy, low-pressure chemical vapor deposition or plasma enhanced chemical vapor deposition, etc. to form a packaging layer 14, thereby completing vacuum thin film packaging;
(13) as shown in fig. 13, the electrical lead-out through hole 12 is etched on the surface of the package layer to the metal pad 7 by using a patterned photolithography and etching method for electrical interconnection, and finally, the preparation and packaging of the thermal infrared detector are completed.
The schematic cross-sectional structure of the sandwich sensitive unit 13 is shown in fig. 14, and is formed by stacking the metal infrared reflecting layer 3, the piezoelectric infrared interference layer 4 and the infrared absorption layer 5 from bottom to top in sequence. The material of the metal infrared reflecting layer 3 in the interlayer sensitive unit 13 can be selected from molybdenum (Mo), and when the thickness a of the molybdenum (Mo) is greater than 100 nanometers, infrared light waves of all wave bands can be reflected; the piezoelectric infrared interference layer 4 can be selected from piezoelectric material aluminum nitride (AlN), and the thickness b of the piezoelectric infrared interference layer is one fourth of the wavelength of target infrared light; the infrared absorption layer 5 may be selected from a titanium nitride (TiN) material, the sheet resistance of which is the same as the vacuum wave impedance of electromagnetic waves, and the thickness c of which may be determined according to the sheet resistance. The sandwich sensitive unit 13 is an optical interference cavity for selectively absorbing target infrared light.
The invention provides a micro-electromechanical thermal infrared detector which is mainly applied to detecting infrared light (with the wavelength lambda ranging from (1-0.75) mu m to (40-25) mu m) in near infrared and intermediate infrared bands. The thickness a of the piezoelectric infrared interference layer 4 at this time may be set to 0.25 μm assuming that the target infrared light wavelength λ is 1 μm. The infrared absorption layer 5 of titanium nitride has a resistivity of 2e-6Ω*m～3e-6Ω × m, and a vacuum wave impedance of 377 Ω, when the sheet resistance of the infrared absorbing layer 5 is matched with the vacuum wave impedance, the transmittance of infrared light can be increased to a greater extent, and when the sheet resistance of the infrared absorbing layer 5 is 377 Ω, the thickness c of titanium nitride of the infrared absorbing layer 5 is about 0.53nm to 0.79 nm.
Fig. 15 shows a schematic cross-sectional structure of the encapsulation layer 14, where the encapsulation layer 14 is composed of a first bragg reflector 15, a second bragg reflector 16, and an intermediate transition layer. Bragg reflectors are periodically stacked thin films of two semiconductor or dielectric materials deposited alternately. The two thin film materials of the Bragg reflector can be selected from amorphous silicon (alpha-Si) and silicon nitride (SiN)x). The thicknesses e and d and the number of periods of the silicon nitride 10 and the amorphous silicon 11 in the first bragg reflector 15 may be calculated and determined by a transmission matrix, and it may be possible to achieve enhanced reflection of electromagnetic waves of a plurality of wavelength bands smaller than the wavelength of the target infrared light. Similarly, the thicknesses g and f and the number of periods of the silicon nitride 10 and the amorphous silicon 11 in the second bragg reflector 16 can be calculated and determined by a transmission matrix, and the electromagnetic waves with reflection being enhanced in a plurality of bands larger than the wavelength of the target infrared light can be realized. The packaging layer 14 can filter the electromagnetic wave input from outside, and can improve the target infrared wavelength selection of the deviceAnd (4) sex.
The micro-electromechanical thermal infrared detector provided by the invention can detect infrared signals in a piezoelectric resonance mode. When a piezoelectric resonance type detection method is adopted, the metal infrared reflecting layer 3 can be used as a bottom electrode layer, and the infrared absorbing layer 5 can be used as a top electrode layer. When the metal infrared reflection layer 3 serves as a bottom electrode layer, the bottom electrode layer may be configured as an interdigital electrode structure, as shown in fig. 16. When the top electrode layer is grounded or suspended, and an alternating voltage signal is applied to the first electrode 3a of the metal infrared reflecting layer 3, when the resonant frequency of the alternating voltage is the same as the resonant frequency of the interlayer sensitive unit 13 serving as a resonant vibrator, the interlayer sensitive unit 13 may resonate due to the inverse piezoelectric effect because the infrared piezoelectric interference layer 4 is made of a piezoelectric material. When the interlayer sensing unit 13 absorbs the infrared light of the external target, the stability of the structure itself increases, and at this time, the resonant frequency of the interlayer sensing unit 13 shifts with the increase of the temperature. Due to the piezoelectric effect of the piezoelectric interference layer 4, the temperature change information of the interlayer sensitive unit 13 caused by infrared radiation can be detected by detecting the output signal output by the second electrode 3b of the metal infrared reflection layer 3, so that infrared sensing is realized. Similarly, the metal infrared reflective layer 3 as the bottom electrode layer may be configured as a differential planar electrode structure, as shown in fig. 17, in which case one end of the two electrodes 3c and 3d in the metal infrared reflective layer 3 may be configured as a driving electrode, and the other end may be configured as a detection electrode, and infrared sensing and detection may also be implemented. When the micro-electro-mechanical thermal infrared detector can detect infrared signals in a piezoelectric resonance mode, a reading circuit is simple, response speed is high, and meanwhile detection precision is good.
The micro-electromechanical thermal infrared detector provided by the invention can detect infrared signals in a pyroelectric way. When the piezoelectric infrared interference layer 4 is made of aluminum nitride or lead zirconate titanate, due to the pyroelectric characteristic of the material, the metal infrared reflection layer 3 can be set as a bottom electrode fully paved on the whole surface, the infrared absorption layer 5 serves as a grounding top electrode, and the infrared detection function can be realized by detecting induced charge signals accumulated on the surface caused by temperature rise caused by infrared radiation absorbed by the piezoelectric infrared interference layer 4.
The micro-electromechanical infrared sensor and the preparation method thereof provided by the embodiment of the invention at least have the following technical effects:
(1) the micro-electromechanical infrared detector provided by the invention utilizes an interlayer sensitive unit structure to carry out infrared detection, and the interlayer sensitive unit is of an optical interference cavity structure, so that the absorption rate of infrared light is enhanced, and simultaneously, the high selectivity of target infrared wavelength can be realized.
(2) The micro-electromechanical infrared detector provided by the invention can adopt a piezoelectric resonance type detection method, and can sense infrared radiation by measuring the change of resonance frequency caused by the temperature rise of the resonance vibrator caused by absorbed infrared radiation. The method has the advantages of simple reading circuit, high response speed and good detection precision.
(3) The micro-electromechanical infrared detector provided by the invention can sense infrared radiation by adopting a pyroelectric detection method and detecting an induced charge signal accumulated on the surface caused by temperature rise caused by infrared radiation absorbed by the piezoelectric infrared interference layer based on the pyroelectric characteristic of the piezoelectric infrared interference layer material. The detection method has strong capability of resisting external noise (vibration, radio frequency interference and the like), and can effectively improve the stability of the sensor.
(4) The packaging layer is composed of two Bragg reflectors and can be used as a filtering structure, the effect of selectively transmitting target infrared light can be realized, and the high selectivity of the target infrared wavelength of the device can be further improved.
(5) The preparation method of the micro-electromechanical infrared detector provided by the invention realizes wafer-level vacuum sealing of the device by adopting a film packaging mode, does not need a subsequent complex vacuum packaging process, reduces the complexity of design and processing, reduces the size of the device and reduces the cost.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (10)
1. A microelectromechanical infrared sensor, comprising: the device comprises a substrate silicon chip, an interlayer sensitive unit, a thin film packaging layer and a metal bonding pad;
the interlayer sensitive unit is positioned above the substrate silicon wafer, and the film packaging layer is positioned above the interlayer sensitive unit; the thin film packaging layer and the substrate silicon wafer form a vacuum chamber, and the interlayer sensitive unit is sealed in the vacuum chamber;
the interlayer sensitive unit comprises a metal infrared reflecting layer, a piezoelectric infrared interference layer and an infrared absorption layer which are sequentially stacked from bottom to top; the interlayer sensitive unit is used for selectively absorbing target infrared light;
the metal infrared reflection layer is used as a bottom electrode layer, the infrared absorption layer is used as a top electrode layer, and the bottom electrode layer and the top electrode layer are connected to the metal bonding pad through electric wiring.
2. The microelectromechanical infrared sensor of claim 1, characterized in that the microelectromechanical electrothermal infrared detector detects infrared signals using at least one of piezoelectric resonance and pyroelectric.
3. The micro-electromechanical infrared sensor according to claim 2, wherein when the micro-electromechanical infrared detector detects an infrared signal in a piezoelectric resonance mode, the interlayer sensing unit is excited to resonate by the bottom electrode layer and the top electrode layer, and infrared radiation information is obtained by measuring a change in resonance frequency of the piezoelectric infrared interference layer due to temperature rise caused by absorption of infrared radiation;
when the micro-electro-thermal infrared detector detects an infrared signal in a pyroelectric manner, infrared radiation information is obtained by detecting an induced charge signal accumulated on the surface, which is obtained by the temperature rise of the piezoelectric infrared interference layer due to the absorption of infrared radiation, by utilizing the pyroelectric characteristic of the piezoelectric infrared interference layer.
4. A microelectromechanical infrared sensor of claim 1, characterized in that the thin film encapsulation layer comprises a support layer and an encapsulation layer; the packaging layer is positioned above the supporting layer;
the packaging layer comprises a first Bragg reflector, a second Bragg reflector and an intermediate transition layer; the first Bragg reflector is used for enhancing the reflection of electromagnetic waves smaller than the wavelength of target infrared light; the second Bragg reflector is used for enhancing the reflection of electromagnetic waves larger than the wavelength of target infrared light; the intermediate transition layer is located between the first bragg reflector and the second bragg reflector.
5. The micro-electromechanical infrared sensor according to claim 4, wherein the support layer is made of polysilicon; the first Bragg reflector and the second Bragg reflector are both periodic stacked thin films formed by alternately depositing amorphous silicon and silicon nitride; the preparation material of the packaging layer adopts amorphous silicon or silicon nitride.
6. The microelectromechanical infrared sensor of claim 1, characterized in that the metallic infrared reflecting layer is of a full-face structure or a differential electrode structure; the differential electrode structure is an interdigital electrode structure or a planar electrode structure.
7. A microelectromechanical infrared sensor of claim 1, characterized in that the sandwich sensitive element has one of a cuboid, a disc, a ring, a cantilever beam, a clamped beam or a tuning fork structure.
8. A microelectromechanical infrared sensor of claim 1, characterized in that the metallic infrared reflecting layer has a thickness greater than 100 nm and is adapted to reflect infrared light waves of all wavelength bands; the thickness of the piezoelectric infrared interference layer is one fourth of the wavelength of the target infrared light; the sheet resistance of the infrared absorption layer is the same as the vacuum wave impedance of the electromagnetic wave.
9. The micro-electromechanical infrared sensor according to claim 1, wherein the metallic infrared reflecting layer is made of one material selected from aluminum, gold, platinum and molybdenum, the piezoelectric infrared interference layer is made of aluminum nitride or lead zirconate titanate, and the infrared absorbing layer is made of titanium nitride.
10. A method for preparing a microelectromechanical infrared sensor of any of the claims 1-9, characterized in that it comprises the following steps:
step 1, etching a concave cavity and a supporting column on the front side of a substrate silicon wafer;
step 2, preparing a silicon oxide layer on the front surface of the substrate silicon wafer, and thinning the silicon oxide layer to the upper surface position of the supporting column;
step 3, depositing a metal infrared reflecting layer on the surface of the silicon oxide layer, and etching the metal infrared reflecting layer to form a bottom electrode layer;
step 4, preparing a piezoelectric infrared interference layer on the surface of the bottom electrode layer, and depositing an infrared absorption layer on the surface of the piezoelectric infrared interference layer;
step 5, etching the infrared absorption layer to form a top electrode layer, and depositing a silicon oxide sacrificial layer on the surface of the top electrode layer;
step 6, etching a first through hole which is deep to the upper surface of the bottom electrode layer on the silicon oxide sacrificial layer;
step 7, depositing a metal layer on the sacrificial silicon oxide layer and the surface of the first through hole, etching, and reserving the metal layer at the first through hole as a metal bonding pad;
step 8, etching a second through hole which is deep to the upper surface of the silicon oxide layer at the concave cavity of the substrate silicon wafer on the silicon oxide sacrificial layer;
step 9, continuously depositing a silicon oxide sacrificial layer on the surface of the silicon oxide sacrificial layer, and etching a sealing through hole reaching the upper surface of the piezoelectric infrared interference layer on the silicon oxide sacrificial layer;
step 10, depositing a supporting layer on the surface of the silicon oxide sacrificial layer, and etching a release hole deep to the upper surface of the silicon oxide sacrificial layer on the surface of the supporting layer;
step 11, corroding the silicon oxide sacrificial layer in the interlayer sensitive unit region and the silicon oxide layer below the interlayer sensitive unit through the release holes to form a resonant cavity, and releasing the interlayer sensitive unit;
step 12, alternately depositing a silicon nitride layer and an amorphous silicon layer on the surface of the supporting layer to form a packaging layer;
and step 13, etching an electrical lead-out through hole on the surface of the packaging layer to the metal pad.
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