CN113721319B - Broadband high extinction ratio on-chip integrated polarizer and design method - Google Patents
Broadband high extinction ratio on-chip integrated polarizer and design method Download PDFInfo
- Publication number
- CN113721319B CN113721319B CN202111000181.4A CN202111000181A CN113721319B CN 113721319 B CN113721319 B CN 113721319B CN 202111000181 A CN202111000181 A CN 202111000181A CN 113721319 B CN113721319 B CN 113721319B
- Authority
- CN
- China
- Prior art keywords
- core layer
- waveguide core
- grating
- straight waveguide
- straight
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008033 biological extinction Effects 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000013461 design Methods 0.000 title abstract description 13
- 239000012792 core layer Substances 0.000 claims abstract description 55
- 239000010410 layer Substances 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 17
- 238000005253 cladding Methods 0.000 claims abstract description 13
- 239000004038 photonic crystal Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000010287 polarization Effects 0.000 abstract description 16
- 230000003287 optical effect Effects 0.000 abstract description 5
- 238000012545 processing Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/105—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type having optical polarisation effects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The invention belongs to the technical fields of integrated photonics and optical sensing, and particularly relates to a broadband high extinction ratio on-chip integrated polarizer and a design method thereof. The invention discloses a wide-band high-extinction-ratio on-chip integrated polarizer which comprises a substrate 6, an upper cladding layer 5 and a waveguide core layer arranged between the substrate and the upper cladding layer, wherein the waveguide core layer is sequentially divided into three parts according to the light propagation direction, namely an input straight waveguide core layer (1), an inclined grating waveguide core layer (2) and an output straight waveguide core layer (3), wherein the inclined grating waveguide core layer (2) arranged between the input straight waveguide core layer (1) and the output straight waveguide core layer (3) comprises a plurality of periods and is arranged in parallel in an inclined mode. The polarizer provided by the invention has the advantages of simple structure and low process realization difficulty, simultaneously utilizes the one-dimensional photonic crystal energy band theory to design the inclined grating parameters, can obtain larger working bandwidth, has larger processing error tolerance, can ensure the TM mode low-loss transmission and TE mode high-efficiency reflection, and realizes the ultrahigh polarization extinction ratio.
Description
Technical Field
The invention belongs to the technical fields of integrated photonics and optical sensing, and particularly relates to a broadband high extinction ratio on-chip integrated polarizer and a design method thereof.
Background
In many fields of optical fiber communication and optical sensing systems, such as optical switches, integrated optical gyroscopes, polarization coherent detection, etc., only single-mode light transmission is often allowed in order to suppress polarization-related errors, so that it is necessary to implement a polarization control function. Among them, on-chip polarization control devices are receiving attention because of their small size, stable performance, mass production, and other advantages. Polarization control devices based on different structural principles have been implemented in recent years including polarizing beam splitters (Polarization beam splitter, PBS), polarization rotators (Polarization rotator, PR) and on-chip polarizers. Among them, polarizing beam splitters based on curved directional couplers (Directional coupler, DC) and polarizers based on surface plasmon waveguides have been reported in a great deal of research. The polarization beam splitter based on the DC structure can realize the separation of TE and TM modes, has a relatively simple structure, is sensitive to wavelength and temperature, needs to design a bending structure for realizing a higher extinction ratio, and increases the size and loss of a device; the polarizer based on the surface plasmon waveguide mainly utilizes the transmission attenuation of TM mode light on the surface of the mixed plasmon, and TE mode transmission is hardly affected in the dielectric waveguide, so that extremely high polarization extinction ratio (more than 30 dB) can be obtained. However, the structure is complex, and a metal film with negative refractive index needs to be deposited to form a surface plasma element, so that the process difficulty is increased; the structure requires that the dielectric waveguide is matched with the surface plasmon waveguide mode phase, so that the structure is very sensitive to waveguide size change, and higher requirements are also put on etching precision. The two polarization control structures have the defects in bandwidth, extinction ratio, process difficulty and the like, and the application and popularization of the two polarization control structures in the field of photon integration are greatly limited.
Disclosure of Invention
Aiming at the defects of the existing structural design, the invention provides a broadband high extinction ratio on-chip integrated polarizer design with compact structure and large processing error tolerance. In order to achieve the above purpose, the invention is realized by adopting the following technical scheme:
the technical scheme of the invention is as follows:
On one hand, the broadband high extinction ratio on-chip integrated polarizer comprises a substrate 6, an upper cladding 5 and a waveguide core layer arranged between the substrate 6 and the upper cladding 5, wherein the waveguide core layer is sequentially divided into an input straight waveguide core layer 1, an inclined grating 2 and an output straight waveguide core layer 3 according to the light propagation direction, the inclined grating 2 arranged between the input straight waveguide core layer 1 and the output straight waveguide core layer 3 comprises a plurality of medium strips which are inclined and parallel to each other, the effective refractive index of each medium strip is n 1, the refractive index of the upper cladding layer 5 in a gap between two adjacent medium strips is n 2, the widths of the two medium strips are a 1、a2 respectively, a fixed included angle theta is formed between the medium strips and the light transmission direction, theta is the inclined angle of the inclined grating, the period a=a 1+a2,θ＝90°-φ,a＝d/sinθ,f＝d2/d＝a2/a of the inclined grating 2 is the normal included angle between light and an incident surface, d is the period of the straight grating, f is the width scale factor of the etched layer of the straight grating structure, and d 2 is the width of the medium layer in the gap of the straight grating;
the side surface of the input straight waveguide core layer 1 adjacent to the inclined grating 2 is parallel to the side surface of the dielectric strip, the side surface of the adjacent output straight waveguide core layer 3 adjacent to the inclined grating 2 is parallel to the side surface of the dielectric strip, and the input straight waveguide core layer 1, the inclined grating 2 and the output straight waveguide core layer 3 are positioned on the same straight line;
the input straight waveguide core layer 1 and the output straight waveguide core layer 3 have the same structure, the etching depth of the input straight waveguide core layer 1, the etching depth of the inclined grating 2 and the etching depth of the output straight waveguide core layer 3 are the same, and the projection width of the inclined grating 2 in the light transmission direction is the same as the width of the input straight waveguide core layer 1 or the output straight waveguide core layer 3.
In a second aspect, there is provided a design method of the broadband high extinction ratio on-chip integrated polarizer according to the first aspect, the method comprising:
Step 1, when the effective refractive index of each dielectric stripe in the inclined grating 2 is n 1, the refractive index of the upper cladding 5 in the gap between two adjacent dielectric stripes is n 2, and the widths of the two dielectric stripes are a 1、a2, respectively calculating the energy band structure of the inclined grating structure with the alternating refractive indexes of n 1 and n 2 and the etching layer width scale factor f of the straight grating structure according to the one-dimensional photonic crystal energy band theory by using a transmission matrix method, wherein the energy band structure of the inclined grating structure with the alternating refractive indexes of n 1 and n 2 and the etching layer width scale factor f of the straight grating structure is about normalized frequency Distribution with normalized wave vector k 1;
step 2, according to the normalized frequency Relationship of normalized wave vector k 1 Normalized frequencies of TE and TM modes are respectively made when the incident angle is phiThe normalized wave vector k 1 is a relation straight line which is intersected with the photon energy band boundary respectively to obtain the overlapping part of the TE mode forbidden band and the TM mode conduction band under phi angle incidence;
Step 3, selecting the lower boundary of the TE mode forbidden band Upper boundary with TM mode conduction bandBand gap between according to the formulaCalculating the wavelength boundary corresponding to the selected energy band boundaryDesigning the center wavelength lambda= (lambda 1+λ2)/2 to obtain the period of the straight grating
Step 4, according to the geometric relationship θ=90- φ, a=d/sin θ, f=d 2/d＝a2/a, the tilt angle θ of the tilted grating is obtained, the period a of the tilted grating, the width a 1 of the dielectric stripes, and the width a 2 of the upper cladding layer 5 in the gap between two adjacent dielectric stripes are obtained, wherein d 2 is the width of the dielectric layer in the gap of the straight grating.
Compared with the prior art, the invention has the following beneficial effects:
The polarizer provided by the invention has the advantages of simple structure and low process implementation difficulty, simultaneously utilizes the one-dimensional photonic crystal energy band theory to design the inclined grating parameters, can obtain larger working bandwidth, has large freedom of parameter selection, has larger processing error tolerance, and simultaneously selects the design of overlapping band gaps of TM conduction band and TE forbidden band, can ensure the low-loss transmission of TM mode and the efficient reflection of TE mode, thereby realizing the ultra-high polarization extinction ratio of more than 30 dB.
Drawings
FIG. 1 is a schematic diagram of a tilted grating waveguide polarizer of the present invention;
FIG. 2 is a schematic diagram of a planar straight grating structure;
FIG. 3 is a diagram of the energy band structure of a grating;
FIG. 4 is a field distribution diagram of TE mode and TM mode;
fig. 5 is an output spectrum of the polarizer.
Detailed Description
In order to make the technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be described in detail and fully with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
The invention is described in further detail below with reference to the attached drawing figures:
Referring to fig. 1, the broadband high extinction ratio on-chip polarizer of the invention mainly comprises an input straight waveguide core layer 1, an inclined grating waveguide core layer 2 and an output straight waveguide core layer 3. The etching depth of the input straight waveguide core layer 1, the inclined grating waveguide core layer 2 and the output straight waveguide core layer 3 is the same, and the projection width of the inclined grating waveguide core layer 2 in the transmission direction is the same as the width of the input straight waveguide core layer 1/the output straight waveguide core layer 3. TE and TM mixed mode light is incident from the input straight waveguide core layer 1 and is transmitted through the tilted grating core layer 2, where TE mode light is efficiently reflected and TM mode light low loss transmission continues to be transmitted in the output straight waveguide core layer 3.
The inclined grating waveguide core layer 2 is formed by alternately arranging the refractive index n 1、n2 and the width a 1、a2 periodically, and forms a fixed included angle theta with the transmission direction, and the refractive index n 2 of the core layer is the same as the refractive index of the upper cladding layer 5. The inclined grating period a=a 1+a2 can be calculated by one-dimensional photonic crystal energy band theory.
The invention relates to a design method of an integrated polarizer on a broadband high extinction ratio chip, which utilizes one-dimensional photonic crystal energy band theory to calculate normalized frequencies of TE and TM modesAnd the relation with a normalized wave vector k 1, selecting a band gap of which the TE mode forbidden band is overlapped with the band gaps of the TM conduction band to determine the inclination angle, the gap and the grating period of the inclined grating so as to realize the efficient reflection of the TE mode and the efficient transmission of the TM mode, thereby realizing the ultrahigh polarization extinction ratio in a wide band range, and the detailed process is as follows:
Step 1, as in the straight grating structure of fig. 2, n 1 is the effective refractive index of the grating waveguide core layer, which has structural relationship with the tilted grating: the period d=a×sin theta, the normal included angle phi and the inclined angle theta of the light and the incident surface satisfy the relation phi+theta=90 DEG, and the etching layer width scale factor f=d2/d is defined;
Step 2, according to the one-dimensional photonic crystal energy band theory, using a transmission matrix method, the energy band structure of the periodic medium layer structure with the width scale factor f relative to the normalized frequency in which the alternating refractive indexes of TE mode light and TM mode are n 1 and n 2 respectively can be calculated And the distribution of the normalized wave vector k 1, see the photonic band structure in fig. 3;
Step 3, defining according to normalized frequency and wave vector: k 1＝ky/(2 pi/d), using Normalized frequencyNormalized wave vector k 1 relationship
Step 4, respectively making normalized frequencies of TE and TM modes when the incident angle is phi in the photon energy band structure by utilizing the relationThe normalized wave vector k 1 is a relation straight line which is intersected with the photon energy band boundary respectively to obtain the overlapping part of the TE mode forbidden band and the TM mode conduction band under phi angle incidence;
step 5, selecting the lower boundary of the TE mode forbidden band The upper boundary of the conduction band of the TM mode at point A in FIG. 3The band gap between points B in FIG. 3 calculates the grating structure parameters according to the formulaThe wavelength boundary corresponding to the selected energy band boundary can be calculatedDesign center wavelength λ= (λ 1+λ2)/2, obtain period
Step 6, according to the geometric relationship θ=90- φ, a=d/sin θ, f=d 2/d＝a2/a, the grating tilt θ, the tilt grating period a and the widths a 1 and a 2 of each dielectric layer can be obtained, and the grating structure is determined.
And (5) finishing the design.
Examples:
In order to better embody the advantages of the invention, according to the technical scheme of the invention, the inclined grating waveguide type polarizer based on the SOI material platform is designed. The center wavelength λ=1550 nm of the designed device, the refractive index of the silicon material is 3.47, the refractive index of the sio 2 material is 1.444, and the dimensions of the straight waveguide are 500nm×220nm. The effective refractive index of the two-dimensional planar waveguide is calculated to be n eff = 2.848. Selecting the width ratio f=0.75 of the dielectric layer, the incident angle phi=25°, and calculating the photon energy band structure to obtain Thus, d=426.7 nm was obtained. Using the geometric relationship, θ=65°, a=470.8 nm, a 1＝353.1nm,a2 =117.7 nm.
By using the above-mentioned parametric modeling simulation, TE and TM mode distributions at the center wavelength are obtained, and it is obvious that TE mode is almost totally reflected, and TM mode is transmitted with low loss. The TE mode transmittance was 0.000285 and the tm mode transmittance was 0.867, so that a high polarization correlation ratio of 34.8dB could be obtained. As can be seen from FIG. 5, the polarizer structure achieves a high extinction ratio of 30dB or more over a large bandwidth of 360nm in the wavelength band of 1340nm to 1700 nm.
In conclusion, the integrated polarizer on the wide-band high-extinction-ratio on-chip has a simple structure and low process implementation difficulty, and simultaneously, the inclined grating parameters are designed by utilizing the one-dimensional photonic crystal energy band theory, so that a larger working bandwidth can be obtained, a larger processing error margin is provided, and meanwhile, the low-loss transmission of a TM mode and the high-efficiency reflection of a TE mode can be ensured, so that the ultra-high-polarization extinction ratio is realized.
The foregoing is only illustrative of the present invention, and the invention has been described in detail, not to be construed as an exhaustive or to be construed as a substitute for conventional products. However, the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily contemplated by those skilled in the art within the scope of the present invention should be included in the scope of the present invention. The protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (2)
1. The broadband high extinction ratio on-chip integrated polarizer is characterized by comprising a substrate (6), an upper cladding layer (5) and a waveguide core layer arranged between the substrate (6) and the upper cladding layer (5), wherein the waveguide core layer is sequentially divided into an input straight waveguide core layer (1), an inclined grating (2) and an output straight waveguide core layer (3) according to the light propagation direction, the inclined grating (2) arranged between the input straight waveguide core layer (1) and the output straight waveguide core layer (3) comprises a plurality of medium strips which are inclined and parallel to each other, the effective refractive index of each medium strip is n 1, the refractive index of the upper cladding layer (5) in a gap between two adjacent medium strips is n 2, the widths of the two medium strips are respectively a 1、a2, the medium strips form a fixed included angle theta with the light transmission direction, the period a=a 1+a2,θ＝90°-φ,a＝d/sinθ,f＝d2/d＝a2/a of the inclined grating (2) is the included angle between light and an incident plane, d is the straight grating period, f is the width scale factor of a straight structure, and the normal line medium of the gap of the grating in d is 34;
the side surface of the input straight waveguide core layer (1) adjacent to the inclined grating (2) is parallel to the side surface of the dielectric strip, the side surface of the adjacent output straight waveguide core layer (3) adjacent to the inclined grating (2) is parallel to the side surface of the dielectric strip, and the input straight waveguide core layer (1), the inclined grating (2) and the output straight waveguide core layer (3) are positioned on the same straight line;
The input straight waveguide core layer (1) and the output straight waveguide core layer (3) are identical in structure, the etching depth of the input straight waveguide core layer (1), the inclined grating (2) and the output straight waveguide core layer (3) is identical, and the projection width of the inclined grating (2) in the light transmission direction is identical to the width of the input straight waveguide core layer (1) or the output straight waveguide core layer (3).
2. A method of designing a broadband high extinction ratio on-chip integrated polarizer as recited in claim 1, said method comprising:
Step 1, when the effective refractive index of each dielectric stripe in the inclined grating (2) is n 1, the refractive index of an upper cladding layer (5) in a gap between two adjacent dielectric stripes is n 2, and the widths of the two dielectric stripes are a 1、a2 respectively, according to the one-dimensional photonic crystal energy band theory, a transmission matrix method is utilized to calculate the energy band structure of the two modes TE and TM in the inclined grating structure with the alternating refractive indexes of n 1 and n 2 respectively, and the etching layer width scale factor of the straight grating structure is f, about the normalized frequency Distribution with normalized wave vector k 1;
step 2, according to the normalized frequency Relationship of normalized wave vector k 1 Normalized frequencies of TE and TM modes are respectively made when the incident angle is phiThe normalized wave vector k 1 is a relation straight line which is intersected with the photon energy band boundary respectively to obtain the overlapping part of the TE mode forbidden band and the TM mode conduction band under phi angle incidence;
Step 3, selecting the lower boundary of the TE mode forbidden band Upper boundary with TM mode conduction bandBand gap between according to the formulaCalculating the wavelength boundary corresponding to the selected energy band boundaryDesigning the center wavelength lambda= (lambda 1+λ2)/2 to obtain the period of the straight grating
Step 4, according to the geometric relationship θ=90- φ, a=d/sin θ, f=d 2/d＝a2/a, the tilt angle θ of the tilted grating is obtained, the period a of the tilted grating, the width a 1 of the dielectric stripes, and the width a 2 of the upper cladding layer (5) in the gap between two adjacent dielectric stripes are obtained, wherein d 2 is the width of the dielectric layer in the gap of the straight grating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111000181.4A CN113721319B (en) | 2021-08-27 | 2021-08-27 | Broadband high extinction ratio on-chip integrated polarizer and design method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111000181.4A CN113721319B (en) | 2021-08-27 | 2021-08-27 | Broadband high extinction ratio on-chip integrated polarizer and design method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113721319A CN113721319A (en) | 2021-11-30 |
| CN113721319B true CN113721319B (en) | 2024-07-23 |
Family
ID=78678747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111000181.4A Active CN113721319B (en) | 2021-08-27 | 2021-08-27 | Broadband high extinction ratio on-chip integrated polarizer and design method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113721319B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114265146B (en) * | 2022-01-27 | 2023-03-24 | 中山大学 | Microcavity-waveguide coupling structure for realizing single photon source on chip and design method thereof |
| CN116107025B (en) * | 2023-04-14 | 2023-06-13 | 北京世维通科技股份有限公司 | Silicon plasma-assisted thin film lithium niobate Y waveguide hybrid integrated structure |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2662733A1 (en) * | 2006-09-12 | 2008-03-20 | Onechip Photonics Inc. | Coupling-enhanced surface etched gratings |
| CN113126206A (en) * | 2021-05-12 | 2021-07-16 | 苏州科沃微电子有限公司 | Silicon-based polarization beam splitting chip based on sub-wavelength grating and manufacturing method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5544268A (en) * | 1994-09-09 | 1996-08-06 | Deacon Research | Display panel with electrically-controlled waveguide-routing |
| US9244227B2 (en) * | 2013-11-11 | 2016-01-26 | Futurewei Technologies, Inc. | Polarization splitter/combiner based on a one-dimensional grating coupler |
| US10502895B2 (en) * | 2016-01-06 | 2019-12-10 | Elenion Technologies, Llc | Integrated on-chip polarizer |
| WO2021149044A1 (en) * | 2020-01-20 | 2021-07-29 | B.G. Negev Technologies And Applications Ltd., At Ben-Gurion University | On-chip broadband beam polarization rotator |
-
2021
- 2021-08-27 CN CN202111000181.4A patent/CN113721319B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2662733A1 (en) * | 2006-09-12 | 2008-03-20 | Onechip Photonics Inc. | Coupling-enhanced surface etched gratings |
| CN113126206A (en) * | 2021-05-12 | 2021-07-16 | 苏州科沃微电子有限公司 | Silicon-based polarization beam splitting chip based on sub-wavelength grating and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113721319A (en) | 2021-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7031562B2 (en) | Photonic input/output port | |
| US6243516B1 (en) | Merging optical waveguides having branch angle within a specific range | |
| US10317584B2 (en) | Grating coupler and preparation method | |
| Carroll et al. | Broad parameter optimization of polarization-diversity 2D grating couplers for silicon photonics | |
| CN113721319B (en) | Broadband high extinction ratio on-chip integrated polarizer and design method | |
| JP2006514751A (en) | Method and system for providing polarization of a beam | |
| JP2017129834A (en) | Optical waveguide element and optical modulator using the same | |
| WO2010093783A2 (en) | Surface plasmon enhanced optical devices for integrated photonics | |
| CN107407776B (en) | High Refractive Index Contrast Photonic Devices and Their Applications | |
| Bor et al. | Asymmetric light transmission effect based on an evolutionary optimized semi-Dirac cone dispersion photonic structure | |
| Feng et al. | Silicon nitride polarizing beam splitter with potential application for intersubband-transition-based all-optical gate device | |
| CN113740960B (en) | a polarizing beam splitter | |
| Li et al. | Ultra-compact, broadband polarization beam splitter based on x-cut lithium-niobate-on-insulator platform using hybrid plasmonic waveguide | |
| CN115826137A (en) | A Broadband Polarizing Beam Splitter Based on Directional Coupling | |
| Yu et al. | Fundamentals and applications of photonic waveguides with bound states in the continuum | |
| US6915047B1 (en) | Broadband, polarization independent integrated optical tap | |
| Huang et al. | Newly reflective bi-function beam splitter by SiO2 pencil-like arrays on silver plate | |
| Hu et al. | Mach–Zehnder modulator based on a tapered waveguide and carrier plasma dispersion in photonic crystal | |
| TW588167B (en) | Polarization-insensitive planar lightwave circuits and method for fabricating the same | |
| CN217385877U (en) | Multifunctional and efficient beam splitter based on meta-grating | |
| Gao et al. | T-shaped reflective polarizer under second Bragg incidence | |
| Liu et al. | Refractive index engineering of high performance coupler for compact photonic integrated circuits | |
| JP2728421B2 (en) | Optical waveguide | |
| Li et al. | A two-thickness subwavelength grating focusing lens for TE polarization light | |
| Li et al. | Heterogeneous integration of amorphous silicon carbide on thin film lithium niobate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |