CN113708739B - Acoustic wave filter - Google Patents
Acoustic wave filter Download PDFInfo
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- CN113708739B CN113708739B CN202111000441.8A CN202111000441A CN113708739B CN 113708739 B CN113708739 B CN 113708739B CN 202111000441 A CN202111000441 A CN 202111000441A CN 113708739 B CN113708739 B CN 113708739B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/644—Coupled resonator filters having two acoustic tracks
- H03H9/6456—Coupled resonator filters having two acoustic tracks being electrically coupled
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- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The embodiment of the application discloses an acoustic wave filter, which comprises a plurality of resonators, wherein the resonators comprise a plurality of series arm resonators and a plurality of parallel arm resonators, and an included angle between the series arm resonators and the parallel arm resonators is within a preset included angle interval; each resonator includes: the piezoelectric thin film comprises a supporting substrate, a piezoelectric thin film and a plurality of electrodes, wherein the piezoelectric thin film is arranged on the supporting substrate, and the electrodes are arranged on the piezoelectric thin film. According to the embodiment of the application, the included angle between the series arm resonator and the parallel arm resonator is set in the preset included angle interval, so that Rayleigh clutter can be inhibited, and the comprehensive performance of the filter is improved.
Description
Technical Field
The invention relates to the technical field of microelectronic devices, in particular to an acoustic wave filter.
Background
With the progress of the material preparation process, the acoustic wave filter based on the piezoelectric thin film-supporting substrate structure can exhibit extremely excellent comprehensive performance compared with the conventional acoustic wave filter based on the piezoelectric material or the piezoelectric thick film-supporting substrate structure. In the prior art, a filter based on a lithium tantalate-silicon dioxide-silicon three-layer structure is proposed, the filter is not suitable for application scenes of high frequency and large bandwidth, a filter based on a lithium niobate-silicon carbide two-layer structure is also proposed in the prior art, and in the filter with the heterostructure, rayleigh clutter can appear in electrical response of part of resonators, and the Rayleigh clutter can seriously influence the flatness of a filter passband.
Disclosure of Invention
The embodiment of the application provides an acoustic wave filter which can inhibit Rayleigh clutter and improve the comprehensive performance of the filter.
The embodiment of the application provides an acoustic wave filter, which comprises: the resonators comprise a plurality of series arm resonators and a plurality of parallel arm resonators, and an included angle between the series arm resonators and the parallel arm resonators is within a preset included angle interval;
Each resonator includes:
A support substrate;
the piezoelectric film is arranged on the supporting substrate;
a plurality of electrodes disposed on the piezoelectric film.
Further, the thickness of the piezoelectric film is a first value;
the center distance between two adjacent electrodes in the plurality of electrodes is a second value;
the first value is less than a second value of 1.6 times.
Further, the piezoelectric film is cut into X-cuts.
Further, the preset included angle interval is [0 °,15 ° ].
Further, the material of the piezoelectric film is lithium niobate or lithium tantalate.
Further, the material of the support substrate is monocrystalline silicon carbide or sapphire.
Further, the method further comprises the following steps:
the thickness of the dielectric layer is within a preset thickness interval, and the preset thickness is (0 nm,300 nm).
Further, the dielectric layer is disposed on the upper surface of the support substrate and on the lower surface of the piezoelectric film.
Further, a dielectric layer is arranged on the piezoelectric film; or alternatively;
The dielectric layer is disposed on the electrode.
Further, the thickness of the dielectric layer is a third value,
The third value is less than 0.7 times the first value.
The embodiment of the application has the following beneficial effects:
The embodiment of the application discloses an acoustic wave filter, which comprises a plurality of resonators, wherein the resonators comprise a plurality of series arm resonators and a plurality of parallel arm resonators, and an included angle between the series arm resonators and the parallel arm resonators is within a preset included angle interval; each resonator includes a support substrate, a piezoelectric film disposed on the support substrate, and a plurality of electrodes disposed on the piezoelectric film. According to the embodiment of the application, the included angle between the series arm resonator and the parallel arm resonator is set in the preset included angle interval, so that Rayleigh clutter can be inhibited, and the comprehensive performance of the filter is improved.
Drawings
In order to more clearly illustrate the embodiments of the application or the technical solutions and advantages of the prior art, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are only some embodiments of the application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of a prior art resonator based on a lithium niobate-silicon carbide bilayer structure;
FIG. 2 is a schematic top view of a prior art resonator based on a lithium niobate-silicon carbide bilayer structure;
FIG. 3 is a schematic diagram of a prior art filter;
FIG. 4 is a schematic diagram of admittance curves of a resonator of a prior art double-layer structure at different wavelengths;
FIG. 5 is a top view of a horizontal shear wave;
FIG. 6 is a cross-sectional mode shape plot of Rayleigh noise waves;
FIG. 7 is a schematic diagram of the electrical response of a two-layer filter and its corresponding resonator;
fig. 8 is a schematic structural diagram of an acoustic wave filter according to an embodiment of the present application;
FIG. 9 is a graphical representation of admittance response of a resonator of bilayer structure for different in-plane propagation directions at a wavelength of 2 um;
FIG. 10 is a graphical representation of admittance response of a resonator of bilayer structure for different in-plane propagation directions at a wavelength of 1.6 um;
FIG. 11 is a schematic diagram of the electrical response of a filter and its corresponding resonator according to an embodiment of the present application;
FIG. 12 is a schematic of the electrical response of a prior art three-layer resonator;
fig. 13 is a schematic cross-sectional view of an acoustic wave filter according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, embodiments of the present application will be described in further detail with reference to the accompanying drawings. It will be apparent that the described embodiments are merely one embodiment of the application, and not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the application. In the description of the embodiments of the present application, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "top", "bottom", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the apparatus/system or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application. The terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defining "first", "second", and "third" may explicitly or implicitly include one or more such features. Moreover, the terms "first," "second," and "third," etc. are used to distinguish between similar objects and not necessarily to describe a particular order or sequence. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the application described herein may be implemented in other sequences than those illustrated or otherwise described herein. Furthermore, the terms "comprise" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion.
Fig. 1 is a schematic cross-sectional view of a conventional resonator based on a lithium niobate-silicon carbide double layer structure, fig. 2 is a schematic plan view of a conventional resonator based on a lithium niobate-silicon carbide double layer structure, and fig. 3 is a schematic structural view of a conventional filter. As shown in fig. 1-3, the existing filter may be formed by topological cascading a plurality of double-layer resonators, where the piezoelectric film of the resonator may be 500nm X-cut lithium niobate, the in-plane propagation direction may be 170 °, the 101 region in fig. 1 is an interdigital electrode, the 103 region is a reflective gate electrode, the material of the electrode may be aluminum, the width of the electrode may be 120nm, the electrode duty cycle may be 50%, and the support substrate may be 4H-SiC.
Fig. 4 is a schematic diagram of admittance curves of a resonator with a conventional double-layer structure at different wavelengths, fig. 5 is a top view mode diagram of horizontal shear waves, fig. 6 is a cross-sectional mode diagram of rayleigh clutter, and fig. 7 is a schematic diagram of electrical response of a filter with a double-layer structure and a corresponding resonator thereof. As can be seen from fig. 4, as the electrode wavelength decreases from 2.4um to 1.8um, rayleigh clutter begins to appear in the admittance curve, and as the wavelength decreases, the intensity of rayleigh clutter gradually increases. As can be seen from fig. 5, the horizontal shear wave vibrates in the horizontal direction. As can be seen from fig. 6, the rayleigh clutter vibrates in the thickness direction. As can be seen from fig. 7, when rayleigh clutter exists in the resonator, a large recess is generated in the passband of the filter, which further affects the normal operation of the filter. For the double-layer structure of lithium niobate/lithium tantalate-silicon, because the sound velocity of silicon is only slightly higher than that of SH0 mode in lithium niobate or lithium tantalate, the energy of SH0 mode is easy to leak into the silicon substrate, resulting in poor comprehensive performance of the resonator, therefore, silicon is not directly adopted as a supporting substrate, but a silicon oxide layer is added between the piezoelectric film and the silicon, so as to improve the local effect of the sound wave energy in the piezoelectric film.
In order to solve the problems that Rayleigh clutter exists in a filter formed by topological cascading of resonators of a plurality of lithium niobate/lithium tantalate-silicon carbide or sapphire double-layer structures, the flatness of a pass band of the filter is seriously affected, and the performance of the filter is seriously affected, the embodiment of the application provides an acoustic wave filter.
An embodiment of an acoustic wave filter according to the present application is described below, and fig. 8 is a schematic structural diagram of an acoustic wave filter according to an embodiment of the present application. The present specification provides a composition as shown in an example or structural schematic, but may include more or fewer devices based on conventional or non-inventive labor. The constituent structures recited in the embodiments are only one way of a plurality of constituent structures, and do not represent the only constituent structures, and may be executed according to the constituent structures shown in the embodiments or the drawings when actually executed.
As shown in fig. 8, the filter may include: the resonators may include a plurality of series-arm resonators and a plurality of parallel-arm resonators, and an included angle between the series-arm resonators and the parallel-arm resonators may be within a preset included angle interval, that is, an included angle θ exists in an in-plane placement direction of the series-arm resonators and the parallel-arm resonators. By arranging the in-plane placement direction included angle of the series arm resonator and the parallel arm resonator, rayleigh clutter can be restrained, and the comprehensive performance of the filter is improved.
In an embodiment of the present application, each resonator may include a support substrate, a piezoelectric film, which may be disposed on the support substrate, and a plurality of electrodes, which may be disposed on the piezoelectric film. That is, the filter may include a series-arm resonator and a parallel-arm resonator, wherein each of the series-arm resonator and the series-arm resonator may include a support substrate, a piezoelectric film, and a plurality of electrodes from bottom to top.
In the embodiment of the application, the preset included angle interval can be [0 degrees, 15 degrees ]. Alternatively, the in-plane placement directions of the series-arm resonator and the parallel-arm resonator may have an included angle θ, which may be 4 °, i.e., θ=4°.
In the embodiment of the application, the thickness of the piezoelectric film may be a first value h, and the center distance between two adjacent electrodes in the plurality of electrodes may be a second value p. Wherein the first value h may be less than 1.6 times the second value p, i.e. h.ltoreq.1.6p. The wavelength and in-plane propagation direction of the resonator can be changed by setting the thickness of the piezoelectric film and the thickness of the electrode.
In the embodiment of the application, the supporting substrate is made of a low-sound transmission loss material with bulk wave sound velocity higher than that of monocrystalline silicon.
In an alternative embodiment, the material of the support substrate may be single crystal silicon carbide SiC or Sapphire. Specifically, the material of the support substrate may be 4H-SiC.
In the embodiment of the application, the material of the piezoelectric film can be lithium niobate or lithium tantalate.
In the embodiment of the application, the acoustic wave filter is mainly formed by cascading a plurality of series arm resonators and parallel arm resonators, horizontal shear waves SH0 are excited in the piezoelectric film through electrodes, and sound field energy is localized in the piezoelectric film by utilizing a high-sound-speed supporting substrate, so that the high performance of the device is realized.
For lithium niobate and lithium tantalate materials, the excitation of the horizontal shear wave SH0 is generally chosen to be either a rotary Y-cut or an X-cut. For rotary Y-cut lithium niobate or lithium tantalate, the corresponding euler angles are (B, a,0 °). Wherein B is the included angle between the resonator and the positive direction of the X axis of the crystal in the plane, and A is the included angle between the positive direction of the Y axis of the crystal and the normal direction of the film. For example, Y42 ° cut, the corresponding euler angle is (B, 48 °,0 °). In the device design process, B is generally 0 °, mainly because lithium niobate and lithium tantalate materials are trigonal piezoelectric materials, and when in other directions (b+.0) in the plane, the response of the horizontal shear wave SH0 will be "split", that is, two resonance peaks of SH0 mode will appear. Therefore, for an acoustic wave filter based on a rotary Y-cut lithium niobate or lithium tantalate, all resonators included therein must excite a horizontal shear wave SH0 along the X-axis direction of the crystal. For X-cut lithium niobate or lithium tantalate, the corresponding Euler angle is (B, 90 degrees), wherein B is the included angle between the resonator and the Y-axis positive direction of the crystal in the plane, and the response of the horizontal shear wave SH0 does not generate split in all directions in the YOZ plane, but the sound velocity of the resonator and the electromechanical coupling coefficient of the resonator have obvious changes in different propagation directions due to the obvious anisotropism of the piezoelectric material, so that in the design process, the proper in-plane propagation direction is required to be selected according to the design requirement and actual conditions, namely the value of B is determined.
In the embodiment of the application, the cutting type of the piezoelectric film can be X-cutting type.
Since the filter is composed of a series-arm resonator and a parallel-arm resonator, the anti-resonance point (lowest admittance point) of the parallel-arm resonator and the resonance point (highest admittance point) of the series-arm resonator need to be nearly identical in frequency, in other words, two resonator groups having different wavelengths are needed in the acoustic wave filter. The existing filter formed by cascading a plurality of resonators with a double-layer structure may have Rayleigh clutter, seriously affect the flatness of the passband of the filter, and seriously affect the performance of the filter. Fig. 9 is a graph showing admittance response of a resonator of a double-layer structure corresponding to different in-plane propagation directions at a wavelength of 2um, and fig. 10 is a graph showing admittance response of a resonator of a double-layer structure corresponding to different in-plane propagation directions at a wavelength of 1.6 um. As shown in fig. 9 and 10, for a resonator with a wavelength of 2um, the admittance response is "clean" only at 170 ° in-plane propagation direction, while for a resonator with a wavelength of 1.6um, the admittance response is "clean" only at 174 ° in-plane propagation direction.
In the embodiment of the application, for the X-cut piezoelectric film and the acoustic wave filter with the high-sound-speed supporting substrate structure, the wavelength and the in-plane propagation direction of the series arm resonator and the parallel arm resonator can be respectively arranged. Alternatively, the wavelength of the series-arm resonator may be set to 1.6um, the in-plane propagation direction may be set to 174 °, the wavelength of the parallel-arm resonator may be set to 1.95um, and the in-plane propagation direction may be set to 170 °, i.e., the angle between the propagation directions defined by the electrodes of the series-arm resonator and the parallel-arm resonator is set to 4 °. Fig. 11 is a schematic diagram of an electrical response of a filter and a corresponding resonator according to an embodiment of the present application, where a passband of a 4-order acoustic wave filter formed by an included angle of 4 ° between a series-arm resonator and a parallel-arm resonator is flat, and no obvious rayleigh clutter is generated.
In the embodiment of the application, the Rayleigh clutter can be restrained and the comprehensive performance of the filter can be improved by respectively setting the in-plane propagation directions of the series arm resonator and the parallel arm resonator and setting the included angle between the series arm resonator and the parallel arm resonator in the preset included angle interval.
An admittance curve diagram of a traditional lithium tantalate-silicon dioxide-silicon based three-layer structure resonator with different wavelengths is shown, wherein the support substrate of the resonator is 300nmSiO 2 -500umSi. Fig. 12 is a schematic diagram of the electrical response of a resonator of a conventional three-layer structure, in which, for acoustic wave resonators of different wavelengths, the shear wave SH0 can be excited horizontally, and the admittance response of the resonator is relatively "clean" and no rayleigh clutter exists between resonance and antiresonance. The reason is that: in the piezoelectric film, the acoustic velocity of the SH0 mode is only slightly higher than that of the rayleigh mode, and since the rayleigh mode vibrates in the XZ plane (cross section), the acoustic velocity is more susceptible to the dielectric layer below the piezoelectric film than the SH0 mode, for example: if the piezoelectric film is made of a high sound velocity material, the rising of the sound velocity of Rayleigh waves is more remarkable than that of SH0 waves, so that the sound velocities of Rayleigh waves and SH0 waves are close; conversely, if the material is a low sound velocity material, the rayleigh mode sound velocity decreases to a greater extent, and therefore the resonance peak of the SH0 mode is further away in the admittance curve of the resonator. However, filters based on lithium tantalate-silica-silicon three-layer structures are not suitable for high frequency, large bandwidth applications. In addition, when the dielectric layer below the piezoelectric film is thinner, the rayleigh clutter is still not far away from the SH0 mode and still can affect the construction of the filter, so that the above-described structure that the direct included angle between the series arm resonator and the parallel arm resonator is arranged in the preset included angle interval is also suitable for the three-layer structure of lithium tantalate-silicon dioxide-silicon.
An embodiment of an acoustic wave filter according to the present application is described below, and fig. 13 is a schematic cross-sectional view of an acoustic wave filter according to an embodiment of the present application. The present specification provides a composition as shown in an example or structural schematic, but may include more or fewer devices based on conventional or non-inventive labor. The constituent structures recited in the embodiments are only one way of a plurality of constituent structures, and do not represent the only constituent structures, and may be executed according to the constituent structures shown in the embodiments or the drawings when actually executed.
Specifically, as shown in fig. 13, the filter may include a plurality of resonators, and the plurality of resonators may include a plurality of series-arm resonators and a plurality of parallel-arm resonators, and an included angle between the series-arm resonators and the parallel-arm resonators is within a preset included angle interval. Each resonator may include: a support substrate 1301, a dielectric layer 1303, a piezoelectric film 1305, and interdigital electrodes 1307 and reflective deletion electrodes 1309. The piezoelectric film may be disposed on the support substrate, the dielectric layer may be disposed on an upper surface of the support substrate, and the plurality of electrodes may be disposed on the piezoelectric film at a lower surface of the piezoelectric film. That is, the filter may include a series-arm resonator and a parallel-arm resonator, wherein each of the series-arm resonator and the series-arm resonator may include a support substrate, a piezoelectric film, and a plurality of electrodes from bottom to top.
In the embodiment of the application, the dielectric layer can also be arranged on the piezoelectric film without covering the electrode, and the dielectric layer can also be arranged on the electrode, namely covering the piezoelectric film and the electrode.
In the embodiment of the application, the preset included angle interval can be [0 degrees, 15 degrees ].
In the embodiment of the application, the supporting substrate is made of a low-sound transmission loss material with bulk wave sound velocity higher than that of monocrystalline silicon.
In an alternative embodiment, the material of the support substrate may be single crystal silicon carbide SiC or Sapphire. Specifically, the material of the support substrate may be 4H-SiC.
In the embodiment of the application, the material of the piezoelectric film can be lithium niobate or lithium tantalate.
In the embodiment of the application, the cutting type of the piezoelectric film can be X-cutting type.
In the embodiment of the application, the thickness of the dielectric layer may be within a preset thickness range, and optionally, the preset thickness may be (0 nm,300 nm).
In an alternative embodiment, the dielectric layer may be silicon dioxide, silicon nitride, aluminum oxide.
In the embodiment of the application, the thickness of the dielectric layer is reduced, the in-plane propagation directions of the series-arm resonator and the parallel-arm resonator are respectively set, and the included angle between the series-arm resonator and the parallel-arm resonator is set in the preset included angle interval, so that the method and the device are applicable to the application scene of miniaturized device integration.
As can be seen from the above-described embodiments of the acoustic wave filter according to the present application, the acoustic wave filter according to the present application includes a plurality of resonators including a plurality of series-arm resonators and parallel-arm resonators, an angle between the series-arm resonators and the parallel-arm resonators is within a preset angle interval, each resonator includes a support substrate, a piezoelectric thin film, and a plurality of electrodes, the piezoelectric thin film is disposed on the support substrate, and the plurality of electrodes are disposed on the piezoelectric thin film. According to the embodiment of the application, the included angle between the series arm resonator and the parallel arm resonator is set in the preset included angle interval, so that Rayleigh clutter can be inhibited, and the comprehensive performance of the filter is improved.
In the present invention, unless explicitly specified and limited otherwise, the terms "connected," "connected," and the like are to be construed broadly, and may be fixedly connected, detachably connected, or integrally formed, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be connected between two elements or the interaction relationship between the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
It should be noted that: the order in which the embodiments of the application are presented is intended to be illustrative only and is not intended to limit the application to the particular embodiments disclosed, and other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims can be performed in a different order in a different embodiment and can achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or the sequential order shown, to achieve desirable results, and in some embodiments, multitasking parallel processing may be possible or advantageous.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.
Claims (8)
1. An acoustic wave filter, comprising: the plurality of resonators comprises a plurality of series arm resonators and a plurality of parallel arm resonators, wherein an included angle between the series arm resonators and the parallel arm resonators is within a preset included angle interval, namely an included angle exists in the in-plane placement direction of the series arm resonators and the parallel arm resonators;
Each of the resonators includes:
A support substrate;
A piezoelectric film disposed on the support substrate;
A plurality of electrodes disposed on the piezoelectric film;
the preset included angle interval is [0 degrees, 15 degrees ]; the cutting type of the piezoelectric film is X cutting type.
2. The filter of claim 1, wherein the piezoelectric film has a thickness of a first value;
the center distance between two adjacent electrodes in the plurality of electrodes is a second numerical value;
the first value is less than 1.6 times the second value.
3. The filter of claim 1, wherein the material of the piezoelectric film is lithium niobate or lithium tantalate.
4. The filter of claim 1, wherein the material of the support substrate is monocrystalline silicon carbide or sapphire.
5. The filter of claim 2, further comprising:
The thickness of the dielectric layer is within a preset thickness interval, and the preset thickness is (0 nm,300 nm).
6. The filter of claim 5, wherein the dielectric layer is disposed on an upper surface of the support substrate and on a lower surface of the piezoelectric film.
7. The filter of claim 5, wherein the dielectric layer is disposed on the piezoelectric film; or alternatively;
the dielectric layer is disposed on the electrode.
8. The filter of claim 5, wherein the dielectric layer has a thickness of a third value,
The third value is less than 0.7 times the first value.
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| CN115276592B (en) * | 2022-06-21 | 2023-08-04 | 上海馨欧集成微电有限公司 | Structure of acoustic wave filter |
| CN115001438B (en) * | 2022-06-21 | 2024-07-02 | 中国科学院上海微系统与信息技术研究所 | A structure and filter of a longitudinal leakage surface acoustic wave resonator |
| CN115276594A (en) * | 2022-06-29 | 2022-11-01 | 上海馨欧集成微电有限公司 | Longitudinal leakage surface acoustic wave resonator and filter |
| CN115425945B (en) * | 2022-08-26 | 2025-06-06 | 中国科学院上海微系统与信息技术研究所 | A surface acoustic wave filter |
| CN115913167B (en) * | 2022-10-11 | 2024-08-30 | 上海馨欧集成微电有限公司 | Surface acoustic wave filter with multiple transmission zeros and signal processing circuit |
| CN115865036B (en) * | 2022-10-31 | 2024-08-30 | 上海馨欧集成微电有限公司 | Resonator and acoustic filter |
| CN116155227B (en) * | 2023-01-09 | 2024-04-26 | 上海馨欧集成微电有限公司 | Surface acoustic wave filter and preparation method thereof |
| CN118381482A (en) * | 2023-01-20 | 2024-07-23 | 华为技术有限公司 | Resonator, filter, and electronic device |
| CN116683887B (en) * | 2023-03-22 | 2025-06-27 | 上海馨欧集成微电有限公司 | An acoustic wave resonator and filter for suppressing transverse high-order modes |
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| CN111817678B (en) * | 2020-07-03 | 2021-12-28 | 中国科学院上海微系统与信息技术研究所 | Monolithic hybrid integrated acoustic wave resonator array and preparation method thereof |
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| JP2010278830A (en) * | 2009-05-29 | 2010-12-09 | Murata Mfg Co Ltd | Ladder type filter and method of manufacturing the same, as well as duplexer |
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