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CN113707585A - Magnetic suspension type substrate conveying cavity and conveying method - Google Patents

Magnetic suspension type substrate conveying cavity and conveying method Download PDF

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Publication number
CN113707585A
CN113707585A CN202110964942.1A CN202110964942A CN113707585A CN 113707585 A CN113707585 A CN 113707585A CN 202110964942 A CN202110964942 A CN 202110964942A CN 113707585 A CN113707585 A CN 113707585A
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chamber
end effector
transfer
substrate
magnetic levitation
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丁欣
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Shanghai Yinwan Photoelectric Technology Co ltd
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Shanghai Yinwan Photoelectric Technology Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明涉及半导体加工传输技术领域,提出一种磁悬浮式衬底传送腔及传送方法。该传送腔可以在外接半导体设备与功能腔室之间传送衬底,包括:进片互锁腔体,其连接传送腔体以及所述外接半导体设备;以及传送腔体,其包括:隔离阀,其布置于所述传送腔体侧壁上,其中所述隔离阀连接所述功能腔室;磁悬浮致动器定子,其布置于所述传送腔体底部,其中所述磁悬浮致动器定子被配置为通过磁悬浮方式控制磁悬浮致动器动子运动磁悬浮致动器动子,其布置于所述传送腔体内部,所述磁悬浮致动器动子连接一个或者多个端末作用器;以及端末作用器,其被配置为运送衬底以及在所述进片互锁腔体和所述功能腔室中取出\放入衬底。

Figure 202110964942

The invention relates to the technical field of semiconductor processing and transmission, and provides a magnetic suspension type substrate transfer cavity and a transfer method. The transfer chamber can transfer the substrate between the external semiconductor device and the function chamber, and includes: a wafer feed interlock chamber, which is connected to the transfer chamber and the external semiconductor device; and a transfer chamber, which includes an isolation valve, It is arranged on the side wall of the transfer cavity, wherein the isolation valve is connected to the functional chamber; a magnetic levitation actuator stator is arranged on the bottom of the transfer cavity, wherein the magnetic levitation actuator stator is configured In order to control the magnetic levitation actuator mover to move the magnetic levitation actuator mover by means of magnetic levitation, the magnetic levitation actuator mover is arranged inside the transmission cavity, and the magnetic levitation actuator mover is connected with one or more end effectors; and end effectors , which is configured to transport substrates and take out/put substrates in the feed interlock chamber and the functional chamber.

Figure 202110964942

Description

Magnetic suspension type substrate conveying cavity and conveying method
Technical Field
The present invention relates generally to the field of semiconductor processing and transport technology. In particular, the invention relates to a magnetic levitation type substrate transfer chamber and a transfer method.
Background
In semiconductor manufacturing, the handling and transportation of semiconductor substrates is an important part. Conventionally, polygonal substrate transfer chambers have been generally used, and fig. 1a and 1b show a Unity-type substrate transfer chamber and a Tactras-type substrate transfer chamber of TEL corporation, respectively. Taking a Tactras-type substrate transfer chamber as an example, in which a plurality of functional chambers 1002 are arranged around the outside of a transfer chamber 1001, a SCARA Robot (Selective Compliance Assembly Robot) is used to transfer substrates in the transfer chamber 1001.
However, the polygonal substrate transfer chamber has a problem that the floor space is large and the number of functional chambers to be mounted is limited. TEL discloses a linear multi-configuration transfer chamber on the Tokyo electronic 2021 year IR public relations conference document, purportedly reducing the footprint by 60% over conventional polygonal substrate transfer chamber designs.
LAM corporation proposed a long and narrow substrate transfer chamber in which a plurality of functional chambers are disposed on both sides of a rectangular transfer chamber, partially solving the problems of a polygonal substrate transfer chamber that the floor area is large and the number of functional chambers to be mounted is limited. However, since the SCARA robot is used to transport the substrate, the following problems still remain:
the SCARA robot arm brings tiny particles due to friction in the working process, and inevitably causes pollution to the substrate; since the speed of the SCARA robot for transferring the substrate is limited, when RTP (Rapid thermal processing) and other Rapid processes are involved, the process time in the reaction chamber is very short, and the SCARA robot cannot meet the corresponding transfer requirements of multiple reaction chambers.
When the SCARA robot arm is adopted to convey in the conveying cavity, a bearing and other mechanical mechanisms are required to be installed at the joint, two small arms at two ends of the joint respectively need to occupy an independent layer surface and do not interfere with each other to rotate, generally, each semiconductor SCARA manipulator has at least 3 small arms, 2 joints and a rotating shaft need larger space height of the conveying cavity, and manufacturing cost of the cavity is increased.
Since the SCARA robot arm generally adopts a circular coordinate structure as shown in fig. 11, it causes the rotational output of the motor and the radial movement of the finger tip of the SCARA robot arm to be in a nonlinear relationship, it is difficult to obtain a smooth radial acceleration, and the nonlinear relationship amplifies the poor precision of the motor.
In addition, the SCARA robot arm usually adopts a multi-joint structure, and taking the SCARA robot arm as an example that the SCARA robot arm has a first arm and a second arm connected, as shown in fig. 12, the terminal coordinate of the second arm can be calculated by the following formula compared with the starting coordinate:
Figure BDA0003223581100000021
wherein x and y represent the coordinates of the end of the second arm, θ, respectively1Representing the angle between the first arm and the starting position, theta2Representing the angle between the second arm and the first arm. L is1And L2Representing the lengths of the first and second arms, respectively. It can be seen that the precision difference between the fingertips of the SCARA robot arm and the motor is further enlarged due to the adoption of the multi-joint structure, and the overall transmission precision of the SCARA robot arm still needs to be improved.
Disclosure of Invention
To at least partially solve the above problems in the prior art, the present invention provides a substrate transfer chamber of a magnetic levitation type that can transfer a substrate between an external semiconductor device and a functional chamber, the substrate transfer chamber of the magnetic levitation type comprising:
the wafer feeding interlocking cavity is connected with the transmission cavity and the external semiconductor equipment; and
a transfer chamber, comprising:
an isolation valve disposed on the transfer chamber sidewall, wherein the isolation valve connects the functional chambers;
a magnetically levitated actuator stator disposed at a bottom of the transfer chamber, wherein the magnetically levitated actuator stator is configured to control a magnetically levitated actuator mover to move in a magnetically levitated manner;
a magnetically levitated actuator mover disposed inside the transfer chamber, the magnetically levitated actuator mover coupled with one or more end effectors; and
an end effector configured to transport substrates and to pick/place substrates in the in-wafer interlock cavity and the functional chamber.
In an embodiment of the present invention, the substrate transfer chamber includes one or more wafer-feeding interlock chambers, each wafer-feeding interlock chamber has a first wafer-feeding interlock chamber valve and a second wafer-feeding interlock chamber valve, wherein the first wafer-feeding interlock chamber valve is connected to an external semiconductor device, the second wafer-feeding interlock chamber valve is connected to a transfer chamber, and the first wafer-feeding interlock chamber valve and the second wafer-feeding interlock chamber valve are configured not to be opened simultaneously.
In one embodiment of the invention, the external semiconductor device comprises a semiconductor device front-end module and/or a semiconductor standard mechanical interface.
In one embodiment of the invention, one or more isolation valves are respectively connected with one or more functional chambers, wherein the functional chambers comprise a reaction chamber, a detection chamber and/or a cooling chamber.
In one embodiment of the present invention, the substrate comprises a semiconductor substrate or a semi-conductor substrate; and/or
The shape of the substrate comprises a circle with the diameter of 25mm-500mm and a square with the side length of 25mm-500 mm; and/or
The substrate material includes silicon, glass/quartz, sapphire, silicon carbide, gallium nitride, gallium arsenide, gallium oxide, and silicon-on-insulator or other first, second, third, and fourth generation semiconductor materials.
In one embodiment of the invention, the transfer chamber is sealed by a sealing ring; and/or
The transfer chamber includes a vacuum pumping line.
In one embodiment of the present invention, it is provided that the transfer chamber includes a rectangular transfer chamber, and the rectangular transfer chamber includes a first/second short side and a first/second long side, wherein the first short side is connected to the plurality of the sheet feeding interlock chambers, and the second short side, the first long side, and the second long side are connected to the plurality of the functional chambers.
In one embodiment of the invention, the functional chamber has a base and a lift mechanism; and/or
The end effector has a recess.
In one embodiment of the invention, when the end effector is in contact with the substrate, a reaction torque is applied to the magnetically levitated actuator mover by the magnetically levitated actuator stator to compensate for the torque due to the weight of the substrate to keep the end effector and the substrate level.
In one embodiment of the invention the pit has an anti-slip means at the edge of the side remote from the magnetically levitated actuator mover.
In one embodiment of the invention, the magnetically levitated substrate transfer chamber includes a single-sided single-ended end effector structure with a first magnetically levitated actuator mover coupled to a first end effector;
a single-sided double-ended end effector structure, wherein a second and a third end effector are arranged on a single side of the second magnetic levitation actuator mover;
the double-side double-end effector structure is characterized in that a fourth end effector and a fifth end effector are symmetrically arranged on two sides of a third magnetic suspension actuator rotor respectively; and
and the two sides of the fourth magnetic suspension actuator rotor are respectively and symmetrically provided with sixth to ninth end effectors.
The invention also provides a method for conveying a substrate by using the magnetic suspension type substrate conveying cavity, which is characterized by comprising the following steps:
removing a substrate from said functional chamber by said end effector, comprising the steps of:
the isolating valve corresponding to the functional chamber is opened;
the substrate is jacked up by a lifting mechanism of the functional cavity;
the end effector entering beneath the substrate;
the lifting mechanism falls down to enable the substrate to fall into the pit of the end effector;
the end effector carries the substrate to withdraw into the conveying cavity; and
closing an isolation valve corresponding to the functional chamber; and
placing a substrate into the functional chamber from the end effector, comprising:
the isolating valve corresponding to the functional chamber is opened;
the end effector carries a substrate into the functional chamber;
the lifting mechanism of the functional chamber lifts the substrate to be separated from the surface of the end effector;
the end effector is retracted into the conveying cavity;
closing an isolation valve corresponding to the functional chamber; and
the lift mechanism of the functional chamber is lowered to drop the substrate onto the pedestal of the functional chamber.
In one embodiment of the invention, the actuator mover is magnetically suspended inside the transfer chamber and the turnaround area is reduced by the reuleaux triangle turnaround.
The invention has at least the following beneficial effects: the substrate is conveyed in the conveying cavity in a magnetic suspension actuating mode, and because no friction parts such as a bearing, a speed reducer, a transmission belt and the like are arranged, micro particle pollution caused by friction can be effectively reduced; the conveying speed of the magnetic suspension actuating mechanism exceeds 4m/s, and compared with the conveying speed of an SCARA (selective compliance assembly robot arm), the conveying speed of the magnetic suspension actuating mechanism is greatly increased, so that the productivity can be effectively improved; the invention can be suitable for RTP (Rapid thermal processing) and other Rapid processes due to the high transmission speed, and can be carried with a plurality of functional chambers; the invention adopts magnetic suspension to actuate, and the transmission precision is greatly improved; compared with the SCARA robot arm with larger volume, the magnetic suspension actuator stator/rotor adopted in the conveying cavity has smaller occupied volume, can be arranged in a space with a mechanical design conveniently, and can approach any functional cavity from the lower part of the conveying cavity for maintenance when equipment is maintained; the mechanical structure of the conveying cavity is greatly simplified, and the quick updating design is facilitated; the invention adopts the magnetic suspension actuator rotor for transmission, the arrangement height of the magnetic suspension actuator rotor is greatly reduced compared with that of a SCARA robot arm, the magnetic suspension actuator rotor can move on a single plane at the bottom of a transmission cavity, so that the internal height of the transmission cavity is lower, the volume is smaller, the processing cost is lower, meanwhile, the transmission cavity with the smaller volume is also beneficial to increasing the speed of the transmission cavity when the gas is pumped or replaced by the same pump, the cleanliness of the process environment is further improved, and the pollution caused by the adsorption in the reaction cavity is less and improved due to the smaller surface area in the cavity; in addition, the magnetic suspension actuator stator/rotor is adopted for transmission, the end effector is directly and rigidly connected with the magnetic suspension actuator rotor, the precision of the end effector can be similar to the position precision of the rotor, and the transmission precision of the magnetic suspension actuator stator/rotor is greatly improved compared with that of the traditional SCARA robot arm.
Drawings
To further clarify the advantages and features that may be present in various embodiments of the present invention, a more particular description of various embodiments of the invention will be rendered by reference to the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. In the drawings, the same or corresponding parts will be denoted by the same or similar reference numerals for clarity.
Fig. 1a-b show schematic views of a prior art substrate transfer chamber.
Fig. 2 is a schematic diagram showing the structure of a substrate transfer chamber in a magnetic levitation type according to an embodiment of the present invention.
Figures 3a-b show a schematic illustration of a splice of rectangular transfer chambers in one embodiment of the invention.
Fig. 4 shows a magnetically levitated planar actuation system of a magnetically levitated actuator stator and a magnetically levitated actuator mover according to an embodiment of the present invention.
Figures 5a-d illustrate schematic views of various end effectors according to embodiments of the present invention.
FIG. 6 is a schematic diagram illustrating a luxo triangle revolution of a single-sided two-terminal end effector configuration in accordance with an embodiment of the present invention.
Figures 7a-b show a schematic of one/more single-sided single-ended effectors for slewing in one embodiment of the invention.
Figures 8a-d show a schematic view of a pair of single-sided single-ended end effectors for performing a turn in one embodiment of the invention.
FIG. 9 is a schematic diagram illustrating the slewing of multiple sets of single-sided, single-ended effectors in accordance with an embodiment of the present invention.
FIG. 10 shows a flow chart for transferring a substrate from Loadlock to some two adjacent functional chambers through one \ more of the single-sided single-ended end effector structures in one embodiment of the invention.
FIG. 11 shows a schematic view of a SCARA robot in one embodiment of the present invention.
Fig. 12 shows a multi-joint schematic of a SCARA robot arm in an embodiment of the invention.
Detailed Description
It should be noted that the components in the figures may be exaggerated and not necessarily to scale for illustrative purposes. In the figures, identical or functionally identical components are provided with the same reference symbols.
In the present invention, "disposed on …", "disposed over …" and "disposed over …" do not exclude the presence of an intermediate therebetween, unless otherwise specified. Further, "disposed on or above …" merely indicates the relative positional relationship between two components, and may also be converted to "disposed below or below …" and vice versa in certain cases, such as after reversing the product direction.
In the present invention, the embodiments are only intended to illustrate the aspects of the present invention, and should not be construed as limiting.
In the present invention, the terms "a" and "an" do not exclude the presence of a plurality of elements, unless otherwise specified.
It is further noted herein that in embodiments of the present invention, only a portion of the components or assemblies may be shown for clarity and simplicity, but those of ordinary skill in the art will appreciate that, given the teachings of the present invention, required components or assemblies may be added as needed in a particular scenario. Furthermore, features from different embodiments of the invention may be combined with each other, unless otherwise indicated. For example, a feature of the second embodiment may be substituted for a corresponding or functionally equivalent or similar feature of the first embodiment, and the resulting embodiments are likewise within the scope of the disclosure or recitation of the present application.
It is also noted herein that, within the scope of the present invention, the terms "same", "equal", and the like do not mean that the two values are absolutely equal, but allow some reasonable error, that is, the terms also encompass "substantially the same", "substantially equal". By analogy, in the present invention, the terms "perpendicular", "parallel" and the like in the directions of the tables also cover the meanings of "substantially perpendicular", "substantially parallel".
The numbering of the steps of the methods of the present invention does not limit the order of execution of the steps of the methods. Unless specifically stated, the method steps may be performed in a different order.
The invention is further elucidated with reference to the drawings in conjunction with the detailed description.
As shown in fig. 2, a substrate transfer chamber of a magnetic levitation type that can transfer a substrate between an external semiconductor device and a functional chamber is proposed in one embodiment of the present invention. The magnetically levitated substrate transfer chamber may include a load lock chamber 207 and a transfer chamber 201. Substrates that can be transferred include semiconductor substrates, which can be first generation, second generation, third generation or even higher generation semiconductor materials, or a generic semiconductor substrate, which can be an LED, solar or flat panel display material. The shape of the substrate may include a circle having a diameter of 25mm to 500mm and a square having a side length of 25mm to 500mm, and the material of the substrate may include Silicon, glass/quartz, sapphire, Silicon carbide, gallium nitride, gallium arsenide, gallium oxide, and SOI (Silicon On Insulator).
The transfer chamber 201 may include an in-flight interlock chamber 207, an isolation valve 205, a magnetically levitated actuator stator 202, a magnetically levitated actuator mover 203, and an end effector 204.
The transfer chamber 201 may be a rectangular transfer chamber as shown in fig. 2, and the rectangular transfer chamber includes a first/second short side and a first/second long side, and the first/second short side and the first/second long side have a plurality of openings. The first short side can be connected with a plurality of the sheet-feeding interlocking cavities 207 through the openings, and the second short side, the first long side and the second long side can be connected with a plurality of functional chambers (chambers) 206 through the openings.
In the embodiment of the present invention, the number of the sheet-feeding interlocking cavities 207 connected to the first short side may not be limited, but for a rectangular transfer cavity with the same floor area, the transfer cavity is designed to be longer, that is, the first/second short sides are shorter, and the longer first/second long sides enable the transfer cavity 201 to connect to more functional chambers 206. Thus, the preferred number of blade-in interlock cavities 207 may be 2\3\ 4.
Due to the size limitation of the processing equipment, the rectangular conveying cavity can be formed by splicing a plurality of small square or rectangular cavities in the manufacturing process. For example, a rectangular transfer chamber may be formed by splicing a plurality of 2 × 2 square small chambers 301 with double openings as shown in fig. 3 a; or may be formed by splicing a plurality of 2x1 rectangular small chambers 3001 with single opening as shown in fig. 3 b. The rectangular small cavity 3001 is adopted for splicing, so that the cost is high, the size of a processed rectangle is wasted, and the square small cavity 301 is generally used for splicing.
The transfer chamber 201 may be sealed by a sealing ring, such as an O-ring, to isolate the transfer chamber 201 from the outside, ensuring air tightness, low leakage and high cleanliness. The interior of the transfer chamber 201 may also have a vacuum pumping line, wherein the working environment inside the transfer chamber 201 is further ensured by the vacuum pumping line when performing a high vacuum or low atmospheric pressure/reduced pressure process. While in an atmospheric or non-atmospheric process, a high purity inert gas may be purged from the functional chamber 206.
The transfer chamber 201 may also be protected and/or isolated by an FFU (Fan filter unit) to ensure high cleanliness.
The wafer-in interlock chamber 207 may be connected to the transfer chamber 201 and the external semiconductor device. The external semiconductor device may include an EFEM (Equipment Front End Module) and/or an SMIF (Standard Mechanical Interface). Alternatively, semiconductor FOUP front opening unified PODs (commonly found in EFEM devices) and/or POD (commonly found in 6 "or 8" PODs) may also directly form the blade-in interlock cavity 207 and interface with the transfer cavity 201.
The wafer-feeding interlock cavity 207 may have a first wafer-feeding interlock cavity valve and a second wafer-feeding interlock cavity valve, wherein the first wafer-feeding interlock cavity valve is connected to an external semiconductor device, the second wafer-feeding interlock cavity valve is connected to the transfer cavity 207, and the first wafer-feeding interlock cavity valve and the second wafer-feeding interlock cavity valve are configured to be unable to be opened simultaneously, so as to isolate the transfer cavity 207 from the external environment during the substrate transfer process.
Around the transfer chamber 201, a functional chamber 206 may be connected, wherein the functional chamber 206 may include a reaction chamber, a detection chamber, and a cooling chamber, connected by corresponding isolation valves 205. The isolation valve 205 is disposed at an opening on a side wall of the transfer chamber, and the communication between the functional chamber 206 and the transfer chamber 201 can be controlled by controlling the opening and closing of the isolation valve 205. For open openings without a functional chamber 206, the openings may be isolated using a mask, or may be closed to maintain gas-tightness, isolation and cleanliness within the transfer chamber 201 by disposing a normally closed isolation valve 205.
At the bottom of the transfer chamber 201 a magnetically levitated actuator stator 202 is arranged, which may control the motion of a magnetically levitated actuator mover 203 in a magnetically levitated manner. Inside the transfer chamber 201 a magnetically levitated actuator mover 203 is arranged. As shown in fig. 4, the magnetic levitation actuator stator 401 and the magnetic levitation actuator mover 402 form a magnetic levitation planar actuation system, which can achieve fast contactless transportation of the magnetic levitation actuator stator 401 on a two-dimensional plane.
The magnetic suspension actuator stator 202 can be rigidly connected to the bottom of the transfer chamber 201, and the magnetic suspension actuator stator 202 can also be lifted and lowered by arranging a Z-axis lifting device, so that the magnetic suspension actuator mover 203 can obtain the capability of complete three-dimensional motion. In addition, other types of one-dimensional, two-dimensional or even three-dimensional motion mechanisms such as linear motors, orthogonal motion tables, scara manipulators, articulated robots and the like are further arranged, so that the suspension actuator stator 202 can move in a three-dimensional space, and the magnetic suspension actuator mover 203 can obtain more flexible or widened and enlarged spatial motion tracks. Thereby realizing the complete function of EFEM or SMIF
The magnetically levitated actuator mover 203 may be coupled to an end effector (end effector)204, and the end effector 204 may transport substrates and pick/place substrates in/out of the blade interlock cavity 207 and the functional chamber 206. As used herein, the term "end effector" refers to an end robotic arm apparatus that interacts with the environment. The functional chambers 206 may have a base, such as a thimble, and the end effector 202 may have a pocket (pocket), and a lift mechanism, such as a heater or electrostatic chuck, that may serve different additional functions in different functional chambers 206. The above structures may cooperate when the end effector 204 is removing/placing substrates in the functional chamber 206.
For example, removing a substrate from the functional chamber 206 by the end effector 204 may include the steps of:
the isolation valve 205 corresponding to the functional chamber 206 is opened;
the substrate is lifted up by the lift mechanism of the functional chamber 206;
the end effector 204 enters beneath the substrate;
the lift mechanism drops to drop the substrate into the pocket of the end effector 204;
the end effector 204 withdraws with the substrate into the transfer chamber 201; and
the isolation valve 205 corresponding to the functional chamber 206 is closed.
Placing a substrate into the functional chamber 206 by the end effector 204 may include the steps of:
the isolation valve 205 corresponding to the functional chamber 206 is opened;
the end effector 204 carries the substrate into the functional chamber 206;
the lift mechanism of the functional chamber 206 lifts the substrate off the end effector 204 surface;
the end effector 204 is retracted inside the transfer chamber 201;
the isolation valve 205 corresponding to the functional chamber 206 is closed; and
the lift mechanism of the functional chamber 206 is lowered to drop the substrate onto the base of the functional chamber 206.
Additionally, when the end effector 204 is in contact with the substrate, a reaction torque may be applied to the magnetically levitated actuator mover 203 by the magnetically levitated actuator stator 202 to compensate for the torque due to the weight of the substrate to keep the end effector 204 and the substrate level. In particular, current magnetically levitated planar transport technology may enable the magnetically levitated actuator mover 203 to achieve a tilt of about 5 degrees. When the end effector 204 to which the magnetically levitated actuator mover 203 is coupled is carried to the substrate, its center of gravity is at a distance from the center of the magnetically levitated actuator mover 203. Taking a substrate with a size of 300mm as an example, the center of gravity is 200mm or even longer from the center of the levitation force of the magnetically levitated actuator mover 203. The weight of the substrate multiplied by the torque created by this distance causes the end effector 204 to sag on the substrate side. When the tilted end effector 204 moves the substrate, it is likely to cause the substrate to slide or even fall out of the end effector 204. If the number of the substrates is small, the accuracy of substrate transfer is lowered, and if the number of the substrates is large, substrate chipping is caused. Therefore, when the end effector 204 contacts the substrate, the torque caused by the gravity of the substrate is compensated by applying an opposite torque to the magnetic levitation actuator mover 203 through the magnetic levitation actuator stator 202, so that the end effector and the substrate are always kept in a horizontal state. Due to the self-limiting effect of the magnetic field, when one side of the rotor inclines downwards, the distance between the rotor and the stator is reduced, and the magnetic force is strengthened. By utilizing the characteristic, the rotor and the end effector can be designed to be slightly upwarped when no silicon chip exists. Due to the height of the valve opening, the end effector should be able to enter the cavity at a certain upturned angle. After the end effector takes the silicon chip, the silicon chip side of the rotor descends, the magnetic force is increased, a resistant torque is generated, and the proper design can enable the self-limiting effect to just compensate the substrate and the end effector to the level.
The edge of the pit of the end effector 204 on the side remote from the magnetically levitated actuator mover 203 has anti-slip means, such as raised edges, friction increasing materials or increased step grooves, to prevent the substrate from slipping out during substrate transport.
The end effector 204 may be passive, used for lift only. It is also possible to arrange a hose coil on the top cover above the transfer chamber 201 and to connect the hose coil to the end effector 204. The coiled hose may be connected to a vacuum system or may deliver clean compressed gas to the end effector 204, which may adsorb the substrate by vacuum adsorption or by bernoulli effect by flowing clean compressed gas from the lower surface of the end effector. Wherein the clean compressed gas may be clean air or high purity nitrogen.
As shown in fig. 5a-d, various configurations between the end effector 204 and the magnetically levitated actuator mover 203 are possible, which may include:
a single-sided single-ended end effector configuration as shown in FIG. 5b, wherein a first magnetically levitated actuator mover 520 is coupled to a first end effector 521;
a single-sided double-ended end-effector structure as shown in fig. 5a, wherein a second end-effector 511 and a third end-effector 512 are arranged on a single side of the second magnetic levitation actuator mover 510;
a double-sided double-ended end effector structure as shown in fig. 5c, wherein a fourth end effector 531 and a fifth end effector 532 are symmetrically arranged on both sides of the third magnetic levitation actuator mover 530, respectively; and
fig. 5d shows a double-sided four-end-effector structure, in which the sixth to ninth end-effectors 541-544 are symmetrically disposed on two sides of the fourth magnetic suspension actuator mover 540.
Generally, the dimensions of the transfer chamber 201, the functional chamber 206, the end effector 204 and the magnetically levitated actuator mover 203 are adapted to the dimensions of the substrate. Since the functional chamber 206 is larger in size than the substrate, the walls of the transfer chamber 201 and the isolation valve 205 also occupy a portion of the physical dimensions. Thus, the end effector 204 requires an extension, typically of the order of 300mm in a 12 inch silicon wafer substrate, in addition to the length of the substrate-bearing pocket portion being greater than the diameter of the substrate, and the magnetically levitated actuator mover 203 may be, for example, 150 mm x150 mm. Thus conservatively, the magnetically levitated actuator mover 203 and the end effector 204 together are approximately 2.5 to 2.8 times longer in substrate diameter, that is, 750 and 800 mm. If the width of the transfer chamber 201 of the 300mm substrate is 1000mm-1200mm, the projection of the magnetic levitation actuator mover 203 is a trapezoid with a length of 750 and 800mm, and upper and lower widths of about 150(200) and 300 mm. Which is dimensioned close to the width of the transport chamber 201, different transport methods need to be used during transport of the substrates depending on the different configurations of the end effector 204 and the magnetically levitated actuator mover 203.
For the single-sided double-end-effector structure, the single-sided double-end-effector structure 601 may be rotated in a reuleaux triangle as shown in fig. 6, wherein the term "reuleaux triangle rotation" refers to the rotation of the single-sided double-end-effector structure 601 within a reuleaux triangle, such that the single-sided double-end-effector structure 601 rotates within a smallest square, thereby realizing substrate transport in all directions. By this method, the radius of gyration can be reduced, enabling substrate transport in a long and narrow shaped transfer chamber. However, this method also increases the time and reduces the efficiency of the swivel, and if there is enough space, the swivel can be performed by 180 degrees or other angle steering around the center point directly.
For one \ more of the single-sided single-ended end effector structures, it may be rotated clockwise or counterclockwise as shown in fig. 7a or fig. 7 b.
And for a paired single-sided single-ended end effector structure, it includes a first single-ended end effector and a second single-ended end effector. The first and second single end effectors may be movable in parallel and in the same direction along the long sides of the transfer chamber as shown in fig. 8a, or may be turned around in pairs. Wherein upon in-situ turn around in pairs, as shown in fig. 8b, a reuleaux triangle revolution may be employed, comprising the steps of: the first single end effector is forward and the second single end effector is backward, and each is as close as possible to the front and rear walls of the transfer chamber; the first single-ended end effector and the second single-ended end effector are close to each other so that the mutual distance is reduced; and the first single end-effector and the second single end-effector remain parallel to each other for a lux triangle revolution.
For paired single-sided single-ended end effector structures, or for a group of 2 to n single-sided single-ended end effectors cooperating to perform substrate transfer, the substrate pick-and-place operation may be performed by a V-word slice transfer method, where n represents the number of loadlocks.
In fig. 8c, for example, a paired single-sided end effector structure is taken from 2 loadlocks and delivered to a functional chamber, the aspect ratio of the delivery chamber is greater than 1: 1, for example, 2: 1 or 3: 1, and the dashed and solid arrows indicate the corresponding positions of the first single-sided end effector and the second single-sided end effector at a time, respectively. As shown in fig. 8c, the V-word passing method may include: the paired unilateral single-end effector structures carry out reversing + 90-degree rotation to complete paired transmission work of the long-edge functional chambers; reversing the paired single-sided single-ended end effector structure +180 degree turns can be done (not shown) to function chambers on the short sides (opposite sides of the loadlock).
The V-word chip passing method is extended to a group consisting of 2, 3 or n single-side single-end effector structures, and 2, 3 or n substrates are taken out of the loadlock simultaneously in a group.
FIG. 8d shows a schematic of a set of 3 single-sided single-ended end effector structures being passed by the V-word pass method. Wherein the size of the transferred substrate is 300mm, the size of the safety valve may be 336 mm. Considering the other spare space, the ideal minimum width of 3 side-by-side loadlocks may be 1008mm, and the entire transmission cavity may be constructed to be 1.1 m or more wide and 3 to 4.5 m long. Scaling can be done similarly if the substrate size to be transferred is 200mm substrate. Consider the design in figure 8d with 3 loadlocks side by side in 1100mm space and three substrates are transferred simultaneously by using multiple sets of 3 single-sided single-ended end effector structures.
The transfer chamber after the loadlock in figure 8d can be divided into 3 sections (two reaction chambers per side, about 1 meter in length) or 2 sections (3 chambers per side, about 1 meter 5 in length), since a reaction chamber is usually larger than a loadlock, two reaction chambers, 12 or 14 in total, can be provided on opposite sides of the loadlock.
A set of 3 single-sided single-ended end effectors was used to transfer 3 substrates simultaneously to 3 side reaction chambers on the same side by the V-letter transfer method. By performing the above-mentioned actions 4 times, 12 substrates can be transferred into all 12 side reaction chambers at a time.
Two more substrates can be introduced into the two reaction chambers on opposite sides of the loadlock using two single-sided single-ended effectors, that is 12 substrates can be transported in 4 actions and 14 substrates can be transported in 5 actions.
In the scenario shown in fig. 8d, the complex stator motion scheduling in the narrow space involved in the transmission using 2 or more sets of 3 single-sided end effector structures may significantly reduce the transmission efficiency. And is not a highly efficient option.
As shown in fig. 9, two sets of two, four in total, single-sided, single-ended end effector structures may be used for substrate transport to improve transport efficiency.
The transport chamber is divided into several 2x2 segments in fig. 9, wherein three 2x2 segments can be divided from left to right. In principle each set of two single-sided single-ended end effector structures occupies one 2x2 segment for a certain period of time, and the two single-sided single-ended end effector structures of the other set occupy the other segment. At the moment, the two unilateral single-end effector structures of each group can take and place the piece for the four functional cavities in the subsection without interfering with the unilateral single-end effector structure of the other group.
When all the film taking work can be completed only by a passage logic which can enable one group of single-side single-end effector structures to safely pass through the section where the other group of single-side single-end effector structures are located, as shown in fig. 9, one group of single-side single-end effector structures can be parked end to end side, and the middle section part of the long side of the transmission cavity is taken as an example in fig. 9. Due to the length design of the single-sided single-ended end effector, which now occupies a space slightly beyond one 2x2 segment, another set of end effectors can pass on the other side, in the direction of the curved arrow, into the next segment.
Through the space in the rational planning transmission cavity, two unilateral single-end effector structures that for example lean on the limit to park are to long limit and are a sharp angle, can reduce the projection length of this group unilateral single-end effector structure on long limit to can realize interchanging the position and effectively carrying in two 2x2 segmentations. When the space is enough in the transmission cavity, the two end effectors stopping by the side can move forward at a safe speed when the other group of end effectors passes through, so that the passing efficiency is improved, namely, the vehicles can pass by the side.
Based on the above-mentioned transport method, the flow of transferring the substrate from Loadlock to some two adjacent functional chambers through one \ more single-sided single-ended end effector structures can be as shown in fig. 10.
Specifically, first, in step 101, it is determined whether there is one or more sets of paired single-sided single-ended effector structures. If there is only one set of paired single-sided single-ended end effector structures, then at step 102, it is determined whether the short-side chamber or the long-side chamber is transferred to the transfer chamber; if the transfer is to the short-side chamber, in step 103, the transfer is turned around by the reuleaux triangle and then transferred into the short-side chamber; if the transfer is to the long-side chamber, it is determined whether there is enough space for the V-letter transfer method transfer in step 104; if there is enough space for the V-letter transfer method transfer, then in step 105, the long side chamber is transferred by the V-letter transfer method; if there is not enough space for V-letter transfer, the wafer is transferred into the long-side chamber after rotating 90 degrees by the reuleaux triangle in step 106; if it is judged in step 101 that there are 2 or more groups of paired single-ended end effector structures, then in step 107, the non-sheet-conveying group is avoided as an avoiding group by side; in step 108, determining whether the short-side chamber or the long-side chamber is transferred to the transfer chamber; if the transfer is to the long-side chamber, the long-side chamber is transferred by the V-letter transfer method in step 109; if the transfer is to the short-side chamber, the transfer is turned around by the reuleaux triangle and then transferred to the short-side chamber in step 110.
The flow of transferring the substrate from two adjacent functional chambers to the Loadlock can be analogized to the other according to fig. 10.
While various embodiments of the present invention have been described above, it should be understood that they have been presented by way of example only, and not limitation. It will be apparent to persons skilled in the relevant art that various combinations, modifications, and changes can be made thereto without departing from the spirit and scope of the invention. Thus, the breadth and scope of the present invention disclosed herein should not be limited by any of the above-described exemplary embodiments, but should be defined only in accordance with the following claims and their equivalents.

Claims (21)

1.一种磁悬浮式衬底传送腔,其被配置为在外接半导体设备与功能腔室之间传送衬底,其特征在于,所述磁悬浮式衬底传送腔包括:1. A magnetic levitation type substrate transfer chamber, which is configured to transfer a substrate between an external semiconductor device and a functional chamber, wherein the magnetic levitation type substrate transfer chamber comprises: 进片互锁腔体,其连接传送腔体以及所述外接半导体设备;以及a chip-feeding interlock cavity connected to the transfer cavity and the external semiconductor device; and 传送腔体,其包括:A transfer cavity, which includes: 隔离阀,其布置于所述传送腔体侧壁上,其中所述隔离阀连接所述功能腔室;an isolation valve arranged on the sidewall of the transfer chamber, wherein the isolation valve is connected to the functional chamber; 磁悬浮致动器定子,其布置于所述传送腔体底部,其中所述磁悬浮致动器定子被配置为通过磁悬浮方式控制磁悬浮致动器动子运动;a magnetic levitation actuator stator, which is arranged at the bottom of the transmission cavity, wherein the magnetic levitation actuator stator is configured to control the movement of the magnetic levitation actuator mover in a magnetic levitation manner; 磁悬浮致动器动子,其布置于所述传送腔体内部,所述磁悬浮致动器动子连接一个或者多个端末作用器;以及a magnetic levitation actuator mover, which is arranged inside the conveying cavity, and the magnetic levitation actuator mover is connected to one or more end effectors; and 端末作用器,其被配置为运送衬底以及在所述进片互锁腔体和所述功能腔室中取出\放入衬底。An end effector configured to transport substrates and take out/put substrates in the feed interlock chamber and the functional chamber. 2.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,包括一个或者多个进片互锁腔体,所述进片互锁腔体具有第一进片互锁腔体阀门以及第二进片互锁腔体阀门,其中所述第一进片互锁腔体阀门与外接半导体设备连接,所述第二进片互锁腔体阀门与传送腔体连接,并且所述第一进片互锁腔体阀门以及所述第二进片互锁腔体阀门被配置为无法同时开启。2 . The magnetic levitation type substrate transfer chamber according to claim 1 , comprising one or more interlocking chambers for sheet feeding, and the interlocking chamber for sheet feeding has a first interlocking chamber valve for sheet feeding. 3 . and a second sheet-feed interlocking cavity valve, wherein the first sheet-feed interlocking cavity valve is connected to an external semiconductor device, the second sheet-feed interlocking cavity valve is connected to the transfer cavity, and the first The first sheet-feed interlocking cavity valve and the second sheet-feed interlocking cavity valve are configured so that they cannot be opened at the same time. 3.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,所述外接半导体设备包括半导体设备前端模块和\或半导体标准机械接口。3. The magnetic suspension type substrate transfer chamber according to claim 1, wherein the external semiconductor device comprises a semiconductor device front-end module and/or a semiconductor standard mechanical interface. 4.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,一个或者多个隔离阀分别连接一个或者多个所述功能腔室,其中所述功能腔室包括反应腔室、检测腔室和/或冷却腔室。4. The magnetic levitation substrate transfer chamber according to claim 1, wherein one or more isolation valves are respectively connected to one or more of the functional chambers, wherein the functional chambers comprise a reaction chamber, a detection chamber and/or cooling chamber. 5.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,所述进片互锁腔体包括前开式晶圆盒FOUP或者晶圆盒POD。5 . The magnetic levitation type substrate transfer cavity according to claim 1 , wherein the interlocking cavity for feeding wafers comprises a front-opening wafer box FOUP or a wafer box POD. 6 . 6.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,所述衬底包括半导体衬底或者泛半导体衬底;和\或6. The magnetic suspension type substrate transfer chamber according to claim 1, wherein the substrate comprises a semiconductor substrate or a pan-semiconductor substrate; and/or 所述衬底的形状包括直径为25mm-500mm的圆形以及边长为25mm-500mm的方形;和\或The shape of the substrate includes a circle with a diameter of 25mm-500mm and a square with a side length of 25mm-500mm; and/or 所述衬底的材料包括硅、玻璃/石英、蓝宝石、碳化硅、氮化镓、砷化镓、氧化镓以及绝缘体上硅。Materials of the substrate include silicon, glass/quartz, sapphire, silicon carbide, gallium nitride, gallium arsenide, gallium oxide, and silicon-on-insulator. 7.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,所述传送腔体通过密封圈进行密封;和\或7. The magnetic suspension type substrate transfer chamber according to claim 1, wherein the transfer chamber is sealed by a sealing ring; and/or 所述传送腔体包括真空抽气管道。The transfer cavity includes a vacuum evacuation conduit. 8.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,所述传送腔体通过风机过滤系统保护和\或隔离。8. The magnetic suspension type substrate transfer chamber according to claim 1, wherein the transfer chamber is protected and/or isolated by a fan filter system. 9.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,所述传送腔体包括长方形传送腔体,所述长方形传送腔体包括第一\第二短边以及第一\第二长边,其中第一短边上与一个或者多个所述进片互锁腔体连接,第二短边、第一长边以及第二长边上与多个所述功能腔室连接。9. The magnetic suspension type substrate transfer chamber according to claim 1, wherein the transfer chamber comprises a rectangular transfer chamber, and the rectangular transfer chamber comprises a first\second short side and a first\second short side Two long sides, wherein the first short side is connected with one or more of the sheet-feeding interlocking cavities, and the second short side, the first long side and the second long side are connected with a plurality of the functional chambers. 10.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,所述磁悬浮致动器定子通过刚性连接与所述传送腔体底部连接;或者10. The magnetic suspension type substrate transfer chamber according to claim 1, wherein the magnetic suspension actuator stator is connected to the bottom of the transfer chamber by a rigid connection; or 所述磁悬浮致动器定子通过一维\二维\三维伺服运动机构与所述传送腔体底部连接。The magnetic suspension actuator stator is connected with the bottom of the transmission cavity through a one-dimensional, two-dimensional, and three-dimensional servo motion mechanism. 11.根据权利要求4所述的磁悬浮式衬底传送腔,其特征在于,所述功能腔室\进片互锁腔体具有底座以及托举机构;和\或11. The magnetic levitation type substrate transfer chamber according to claim 4, wherein the functional chamber\feeding interlocking cavity has a base and a lifting mechanism; and\or 所述端末作用器具有凹坑,其中所述凹坑被配置为承载所述衬底。The end effector has a pocket, wherein the pocket is configured to carry the substrate. 12.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,当所述端末作用器与所述衬底接触时,通过所述磁悬浮致动器定子对所述磁悬浮致动器动子施加反作用扭矩以补偿所述衬底重力带来的扭矩,以使所述端末作用器及所述衬底保持水平。12 . The magnetic levitation type substrate transfer chamber according to claim 1 , wherein when the end effector is in contact with the substrate, the magnetic levitation actuator is actuated by the magnetic levitation actuator stator. 13 . A counteracting torque is applied to compensate for the torque due to the gravity of the substrate to keep the end effector and the substrate level. 13.根据权利要求11所述的磁悬浮式衬底传送腔,其特征在于,所述凹坑在远离所述磁悬浮致动器动子的一侧的凹坑边缘上具有防滑机构。13 . The magnetic levitation type substrate transfer chamber of claim 11 , wherein the dimple has an anti-skid mechanism on the edge of the dimple on the side away from the mover of the magnetic levitation actuator. 14 . 14.根据权利要求1所述的磁悬浮式衬底传送腔,其特征在于,所述传送腔体内具有软管,所述软管连接至所述端末作用器,并且所述软管连接至真空系统或者输送洁净气体至所述端末作用器,所述洁净气体包括洁净空气或者高纯氮气;14. The magnetically levitated substrate transfer chamber of claim 1, wherein the transfer chamber has a hose therein, the hose is connected to the end effector, and the hose is connected to a vacuum system Or deliver clean gas to the end effector, the clean gas includes clean air or high-purity nitrogen; 其中通过真空吸附以吸附所述衬底或者通过所述洁净气体从所述端末作用器的下表面流出以通过伯努利效应吸附所述衬底。The substrate is adsorbed by vacuum adsorption or the substrate is adsorbed by Bernoulli effect by flowing out of the cleaning gas from the lower surface of the end effector. 15.根据权利要求6所述的磁悬浮式衬底传送腔,其特征在于,包括单侧单端末作用器结构,其中第一磁悬浮致动器动子连接第一端末作用器;15. The magnetic levitation type substrate transfer chamber according to claim 6, characterized in that it comprises a single-sided single-end effector structure, wherein the first magnetic levitation actuator mover is connected to the first end effector; 单侧双端末作用器结构,其中第二磁悬浮致动器动子的单侧布置第二及第三端末作用器;A single-sided double-ended end effector structure, wherein the second and third end effectors are arranged on one side of the mover of the second magnetic suspension actuator; 双侧双端末作用器结构,其中第三磁悬浮致动器动子的两侧分别对称布置第四及第五端末作用器;以及Double-sided double-end effector structure, wherein the fourth and fifth end effectors are symmetrically arranged on both sides of the third magnetic suspension actuator mover; and 双侧四端末作用结构,其中第四磁悬浮致动器动子的两侧分别对称布置第六至第九端末作用器。The double-side four-end effector structure, wherein the sixth to ninth end effectors are symmetrically arranged on both sides of the mover of the fourth magnetic levitation actuator. 16.一种衬底传送装置,其特征在于,包括:16. A substrate transfer device, comprising: 磁悬浮致动器定子,其被配置为通过磁悬浮方式控制磁悬浮致动器动子运动;a magnetic levitation actuator stator, which is configured to control the movement of the magnetic levitation actuator mover in a magnetic levitation manner; 磁悬浮致动器动子,其连接一个或者多个端末作用器;以及a magnetic levitation actuator mover connected to one or more end effectors; and 端末作用器,其被配置为承载以及运送衬底。An end effector configured to carry and transport the substrate. 17.一种利用权利1-15之一所述的磁悬浮式衬底传送腔传送衬底的方法,其特征在于,包括下列步骤:17. A method for transferring substrates using the magnetic suspension type substrate transfer chamber described in one of claims 1-15, characterized in that, comprising the following steps: 由所述端末作用器从所述功能腔室中取出衬底,其中包括下列步骤:The removal of the substrate from the functional chamber by the end effector includes the following steps: 所述功能腔室对应的隔离阀开启;The isolation valve corresponding to the functional chamber is opened; 所述功能腔室的托举机构将衬底顶起;The lifting mechanism of the functional chamber lifts the substrate; 所述端末作用器进入衬底下方;the end effector enters below the substrate; 所述托举机构下落以使衬底落入所述端末作用器的凹坑内;the lift mechanism is dropped to drop the substrate into the pocket of the end effector; 所述端末作用器带着衬底回撤入所述传送腔体内部;以及The end effector is withdrawn with the substrate into the interior of the transfer cavity; and 所述功能腔室对应的隔离阀关闭;以及The isolation valve corresponding to the functional chamber is closed; and 由所述端末作用器向所述功能腔室中放入衬底,其中包括下列步骤:Putting a substrate into the functional chamber by the end effector includes the following steps: 所述功能腔室对应的隔离阀开启;The isolation valve corresponding to the functional chamber is opened; 所述端末作用器带着衬底进入所述功能腔室;the end effector carries the substrate into the functional chamber; 所述功能腔室的托举机构将衬底顶起以脱离所述端末作用器表面;The lift mechanism of the functional chamber lifts the substrate away from the end effector surface; 所述端末作用器回撤入所述传送腔体内部;the end effector is retracted into the delivery cavity; 所述功能腔室对应的隔离阀关闭;以及The isolation valve corresponding to the functional chamber is closed; and 所述功能腔室的托举机构下降以使衬底下落至所述功能腔室的底座上。The lift mechanism of the functional chamber is lowered to drop the substrate onto the base of the functional chamber. 18.根据权利要求17所述的传送衬底的方法,其特征在于,在传送腔体内部磁悬浮致动器动子以及端末作用器通过勒洛三角形回转减少调头回转面积。18 . The method for transferring substrates according to claim 17 , wherein the magnetic levitation actuator mover and the end effector are rotated in the transfer cavity to reduce the turning area by means of a Leroy triangle. 19 . 19.根据权利要求18所述的传送衬底的方法,其特征在于,成对单侧单端末作用器结构通过V字传片方法从进片互锁腔体中取出衬底并且传送至功能腔室,所述成对单侧单端末作用器包括第一单侧单端末作用器以及第二单侧单端末作用器,其中所述V字传片方法包括:19. The method for transferring substrates according to claim 18, wherein the paired single-side single-ended end effector structures take out the substrates from the interlocking chamber of the film feed by a V-shape transfer method and transfer the substrates to the functional chamber chamber, the paired single-sided single-ended end effectors include a first single-sided single-ended end effector and a second single-sided single-ended end effector, wherein the V-shaped film transfer method includes: 成对单侧单端末作用器结构进行倒车及90度回转动作以对长边的功能腔室传片;以及Paired single-sided single-ended end effector structures perform reverse and 90-degree swivel motions to transfer films to long-side functional chambers; and 成对单侧单端末作用器结构进行倒车及180度回转以对长边的功能腔室传片。The paired single-side single-end end effector structure performs reversing and 180-degree rotation to transfer films to the long-side functional chamber. 20.根据权利要求19所述的传送衬底的方法,其特征在于,以2至n个单侧单端末作用器结构为一组通过V字传片方法从进片互锁腔体中取出衬底并且传送至功能腔室,其中n表示所述进片互锁腔体的数量。20 . The method for transferring substrates according to claim 19 , wherein the substrates are taken out from the interlocking cavity of the film feeding by a V-shaped film transfer method with 2 to n single-side single-ended end effector structures as a group. 21 . and transfer to the functional chamber, where n represents the number of the interlocking chambers. 21.根据权利要求20所述的传送衬底的方法,其特征在于,还包括∶21. The method of claim 20, further comprising: 判断具有一组还是多组成对单侧单端末作用器结构;Determine whether it has one or more pairs of single-sided single-ended end effector structures; 如果仅具有一组成对单侧单端末作用器结构,则确定传输至传输腔体的短边侧腔室还是长边侧腔室;If there is only one pair of single-sided single-ended end effector structures, determine whether to transfer to the short-side chamber or the long-side chamber of the transfer chamber; 如果传输至短边侧腔室,则通过勒洛三角形回转掉头后传入短边侧腔室;If it is transmitted to the short side chamber, it will be transferred to the short side chamber after turning around through the Leroy triangle; 如果传输至长边侧腔室,则确定是否具有足够进行V字传片方法传输的空间;If it is transferred to the long side chamber, determine whether there is enough space for the V-shaped film transfer method; 如果具有足够进行V字传片方法传输的空间,则通过V字传片方法传入长边侧腔室;If there is enough space for the V-shaped film transfer method, it is passed into the long side chamber through the V-shaped film transfer method; 如果没有足够进行V字传片方法传输的空间,则通过勒洛三角形回转90度后传入长边侧腔室;If there is not enough space for the V-shaped film transfer method, it will be transferred to the long side chamber after rotating 90 degrees through the Leroy triangle; 如果判断具有2组或更多组成对单侧单端末作用器结构,则非传片组作为避让组靠边避让;If it is judged that there are 2 or more pairs of unilateral and single-ended end effector structures, the non-transmission group will be used as the avoidance group to avoid; 确定传输至传输腔体的短边侧腔室还是长边侧腔室;Determine whether to transfer to the short side chamber or the long side chamber of the transfer chamber; 如果传输至长边侧腔室,则通过V字传片方法传入长边侧腔室;If it is transmitted to the long side chamber, it will be transferred to the long side chamber by the V-shaped film transfer method; 如果传输至短边侧腔室,则通过勒洛三角形回转掉头后传入短边侧腔室。If it is transmitted to the short side chamber, it will be transferred to the short side chamber after turning around through the Leroy's triangle.
CN202110964942.1A 2021-08-23 2021-08-23 Magnetic suspension type substrate conveying cavity and conveying method Pending CN113707585A (en)

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