CN113690150A - A method for flip-chip bonding of devices - Google Patents
A method for flip-chip bonding of devices Download PDFInfo
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- CN113690150A CN113690150A CN202110976160.XA CN202110976160A CN113690150A CN 113690150 A CN113690150 A CN 113690150A CN 202110976160 A CN202110976160 A CN 202110976160A CN 113690150 A CN113690150 A CN 113690150A
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 229910052738 indium Inorganic materials 0.000 claims abstract description 87
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 87
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000003825 pressing Methods 0.000 claims abstract description 27
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 14
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims abstract description 13
- 235000019253 formic acid Nutrition 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 239000007788 liquid Substances 0.000 claims abstract description 8
- 239000007787 solid Substances 0.000 claims abstract description 8
- 238000005476 soldering Methods 0.000 claims abstract description 7
- 238000003491 array Methods 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 6
- 229920000742 Cotton Polymers 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 3
- 238000010583 slow cooling Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 22
- 238000003466 welding Methods 0.000 abstract description 18
- 238000001816 cooling Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/81201—Compression bonding
- H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
本发明公开了一种器件倒装焊的方法，将目标器件装架到设备的机械臂上；将目标器件与基座上的电路进行上下铟柱阵列的水平对准；移动真空罩，形成密闭加工腔室；加热所述密闭加工腔室内器件至预设温度，通氮气和甲酸的混合气体达到预定时间，还原锢柱表面氧化层；当铟柱表面氧化层被完全还原，并且铟柱熔化为液态铟球时，开始缓慢降温，降至预设温度区间时停止，在真空环境下保持预设时间，使铟球凝固为固态，以预设的压力压合上下的铟柱，完成压合。通过以冷压焊的工艺过程为整体框架，将部分回流焊工艺与冷压焊框架进行巧妙的兼容，提高器件倒装焊的精度和可靠度。
The invention discloses a device flip-chip welding method. The target device is mounted on the mechanical arm of the device; the target device and the circuit on the base are horizontally aligned with the upper and lower indium column arrays; the vacuum cover is moved to form a closed processing chamber; heating the device in the closed processing chamber to a preset temperature, passing the mixed gas of nitrogen and formic acid for a predetermined time, and reducing the oxide layer on the surface of the indium pillar; when the oxide layer on the surface of the indium pillar is completely reduced, and the indium pillar is melted into When the indium ball is in liquid state, it starts to cool down slowly, and stops when it falls to a preset temperature range. It is kept in a vacuum environment for a preset time, so that the indium ball solidifies into a solid state, and the upper and lower indium columns are pressed together with a predetermined pressure to complete the pressing. By taking the process of cold pressure welding as the overall framework, part of the reflow soldering process is skillfully compatible with the cold pressure welding framework, so as to improve the precision and reliability of device flip-chip welding.
Description
Technical Field
The invention relates to the technical field of infrared focal plane devices, in particular to a device flip-chip bonding method.
Background
Flip chip bonding has been widely and rapidly developed as an interconnection technology with high efficiency, high packaging density, and high electrical performance. In recent years, with the continuous reduction of pixel spacing and indium column volume of infrared focal plane devices, the requirements of the infrared focal plane devices on flip-chip bonding and pressing precision are higher and higher.
The existing and widely used flip-chip bonding technology is cold pressing, namely, the upper device and the lower device are pressed at room temperature, during operation, a chip on a mechanical arm of the equipment is firstly horizontally aligned with a circuit on a base, the indium columns are pressed by the mechanical arm after the alignment is finished, and the upper indium columns and the lower indium columns are connected together through interatomic metal bonds by utilizing the properties of softness and stress changeability of metal indium.
The method is simple, has low requirements on equipment functions, can ensure the preset effective pixel rate and device yield for devices with small area arrays and large pixel intervals, but has low process precision and process reliability, and once the area array scale of the devices is increased and the pixel intervals are reduced, the effective pixel rate and the yield of the method can be sharply reduced and can not reach the inspection standard of qualified finished products.
Disclosure of Invention
In order to solve the above technical problems, an object of the present invention is to provide a method for flip chip bonding of a device, which is used to improve the accuracy and reliability of flip chip bonding.
In order to achieve the purpose, the invention adopts the following technical scheme: a method of flip chip bonding a device comprising the steps of:
mounting the target device on a mechanical arm of the equipment;
horizontally aligning the target device with the circuit on the base by the upper indium column array and the lower indium column array;
moving the vacuum hood to form a closed processing chamber;
heating a target device in the closed processing chamber to a preset temperature, introducing mixed gas of nitrogen and formic acid to reach a preset time, and reducing an oxide layer on the surface of the indium column;
when the oxide layer on the surface of the indium column is completely reduced and the indium column is melted into liquid indium balls, slowly cooling, stopping cooling to a preset temperature range, and keeping for a preset time in a vacuum environment to solidify the indium balls into solid state;
and pressing the upper indium columns and the lower indium columns at a preset pressure to complete pressing.
Further, before the mounting the target device on the robot arm of the apparatus, the method further includes:
taking the device for microscopic examination, and cleaning the device with a cotton swab and a blade under a body type microscope if dirt exists; and cleaning the equipment and the equipment mechanical arm.
Further, the horizontal alignment of the upper indium column array and the lower indium column array between the target device and the circuit on the base specifically includes:
and moving the base absorbed with the circuit, the mechanical arm absorbed with the target device and the optical microscope for alignment to a specified position, and leveling and aligning the target device and the circuit by using a cross cursor sent by the optical microscope.
Further, the microscope includes an upper microscope aligned with the target device and a lower microscope aligned with the circuit.
Further, the leveling and aligning of the target device and the circuit by using a cross cursor sent by the microscope specifically includes:
the indium columns of the target device and the circuit are horizontally aligned with high accuracy by imaging the upper microscope and the lower microscope on the operation screen.
Further, the moving the vacuum hood to form a closed processing chamber specifically includes:
and moving the mechanical arm downwards to a preset height, slowly extending out the vacuum cover in the mechanical arm, perfectly connecting the vacuum cover with the vacuum cover extending out of the base to form a closed processing chamber, opening a vacuum switch, and exhausting for 3-5 min.
Further, the device in the closed processing chamber is heated to a preset temperature, mixed gas of nitrogen and formic acid is introduced to reach a preset time, the preset temperature in the oxide layer on the surface of the indium column is reduced to 160-200 ℃, and the preset time is 3-5 min.
Further, when the oxide layer on the surface of the indium column is completely reduced and the indium column is melted into liquid indium balls, the temperature is slowly reduced, the temperature is reduced to a preset temperature range, the temperature is stopped, the temperature is kept in the vacuum environment for a preset time, the preset temperature range is 130-150 ℃, and the preset time is 20-30 min.
Further, the preset pressure is a pressure value of 0.1-1 kg.
Further, before the slow cooling is started, the pipeline for introducing the mixed gas of the nitrogen and the formic acid is closed.
The invention has the beneficial effects that: the embodiment of the invention provides a device flip-chip bonding method, which comprises the steps of mounting a target device on a mechanical arm of equipment; horizontally aligning the target device with the circuit on the base by the upper indium column array and the lower indium column array; moving the vacuum hood to form a closed processing chamber; heating the device in the closed processing chamber to a preset temperature, introducing mixed gas of nitrogen and formic acid to reach a preset time, and reducing an oxide layer on the surface of the indium column; and when the oxide layer on the surface of the indium column is completely reduced and the indium column is melted into liquid indium balls, slowly cooling, stopping cooling to a preset temperature range, keeping for a preset time in a vacuum environment to solidify the indium balls into solid, and pressing the upper and lower indium columns at a preset pressure to complete pressing. The cold-press welding process is used as an integral frame, the partial reflow welding process is skillfully compatible with the cold-press welding frame, a very good pressing effect is obtained, abnormal phenomena such as dislocation, huge deformation and the like do not occur between the indium columns, and the accuracy and reliability of flip-chip welding of the device are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a flowchart illustrating steps of a method for flip chip bonding a device according to an embodiment of the present invention;
FIG. 2 is a flowchart illustrating detailed steps of a method for flip chip bonding a device according to an embodiment of the present invention;
FIG. 3 is a temperature profile of a bonding process of a flip-chip bonding method for a device according to an embodiment of the present invention;
fig. 4 is a schematic temperature curve of a bonding process of a flip-chip bonding method for a device according to an embodiment of the present invention.
Detailed Description
The embodiment of the invention provides a flip chip bonding method for a device, which is used for improving the accuracy and reliability of the flip chip bonding of the device.
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the embodiments described below are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
Example (b):
referring to fig. 1, fig. 1 is a method for flip chip bonding a device according to an embodiment of the present invention, including the following steps:
step 1: mounting the target device on a mechanical arm of the equipment;
step 2: horizontally aligning the target device with the circuit on the base by the upper indium column array and the lower indium column array;
and step 3: moving the vacuum hood to form a closed processing chamber;
and 4, step 4: heating the device in the closed processing chamber to a preset temperature, introducing mixed gas of nitrogen and formic acid to reach a preset time, and reducing an oxide layer on the surface of the indium column;
and 5: when the oxide layer on the surface of the indium column is completely reduced and the indium column is melted into liquid indium balls, slowly cooling, stopping cooling to a preset temperature range, and keeping for a preset time in a vacuum environment to solidify the indium balls into solid state;
step 6: and pressing the upper indium columns and the lower indium columns at a preset pressure to complete pressing.
In a specific embodiment, vacuum interconnection equipment is needed, at present, a mainstream pressing method based on the vacuum interconnection equipment is cold-press welding, and a reflow soldering process technology is still not mature due to a plurality of influencing factors and complicated steps. In the embodiment, the reflow soldering process and the cold soldering process are combined, so that the reflow soldering and laminating effect is basically achieved, the process difficulty and the complexity of steps are greatly reduced, and the method is a simple, high-reliability and high-yield new process method. The detailed process steps are as follows:
the first step is as follows: taking out the target device, wherein the target device is a chip, and performing microscopic examination by using a body type microscope, wherein the body type microscope is an analytical instrument used in the field of biology. If dirt is found, cleaning with a cotton swab and a blade under a body microscope; the stereomicroscope is required to be magnified to 200 times, the cotton swab is a dust-free cotton swab, the blade must be wiped by dipping alcohol through dust-free cloth before being cleaned, and the step can ensure that the surface of the device has no dirt which can affect the backward welding precision and no excess which can affect the pressing process.
The second step is that: after the surface of the target device is cleaned, mounting the target device to a position corresponding to equipment; similarly, in order to ensure the surface cleanliness of the device, the transition vacuum chuck, the chuck clamping groove and the mechanical arm of the equipment are required to be thoroughly cleaned by dipping alcohol and nitrogen before being mounted.
The third step: and an operation device for moving the base to which the circuit is attached, the robot arm to which the target device is attached, and the optical microscope for alignment to a specified position.
The fourth step: the cross cursor sent by the optical microscope is used for leveling and aligning the target device and the circuit, so that the indium column surfaces of the circuit and the target device are adjusted to be parallel, and the subsequent pressing quality is ensured.
The fifth step: the imaging of the upper microscope and the lower microscope on the operation screen is utilized to carry out high-precision horizontal alignment on the indium columns of the target device and the circuit, so that the dislocation of the indium columns in the pressing process is avoided.
And a sixth step: and slowly moving the mechanical arm down to a preset height, slowly extending out the vacuum cover in the mechanical arm, perfectly connecting the vacuum cover with the vacuum cover extending out of the base to form a closed cavity, opening a vacuum switch, exhausting for 3-5 min, and providing a vacuum working environment for the device.
The seventh step: and heating a target device in the closed processing chamber to 160-200 ℃, introducing mixed gas of nitrogen and formic acid for 3-5 min, wherein the heating process is slow, and the flow rate of the mixed gas of nitrogen and formic acid is slow, so as to reduce the oxidized dielectric layer on the surface of the indium column and melt the indium column into bright indium balls.
Eighth step: and closing a pipeline for introducing nitrogen and formic acid, slowly cooling the device to 130-150 ℃, and keeping for 20-30 min, so as to cool the indium balls and solidify the indium balls into a solid state.
The ninth step: slowly moving the mechanical arm downwards, operating equipment, carrying out a pressing procedure, and pressing with the pressure of 0.1-1 kg; at the moment, the temperature of the device is 130-150 ℃, and the temperature is very close to the melting point of metal indium, so that the indium balls are in a solid state but in a very soft state, and only need to be pressed by small pressure.
It should be noted that, as shown in fig. 2, the temperature curve of the whole pressing process changes cold pressing at normal temperature or reflow soldering with indium column melting point above 156 ℃ in the prior art, and 130-150 ℃ is used as the temperature of the target device and the ambient temperature of the pressing, so that a process softer than cold welding and better welding effect can be achieved without facing a complicated process of pressing liquid metal.
In addition, as shown in fig. 3, the pressure curve of the whole pressing process overcomes the defects that in the prior art, the pressing temperature of the cold-press welding process is low, although the metal indium is soft in texture, the preset hardness still exists, so that the required pressure during cold-press welding is large, generally between 30 kg and 80kg, under such large pressure, the indium columns are easily uncontrollably and greatly deformed to cause dislocation between the upper indium column and the lower indium column, even adjacent indium columns are contacted, so that the technical problem of short circuit of corresponding pixels is caused. In the embodiment, the indium columns are pressed at the temperature of 130-150 ℃ by using the pressure of 0.1-1 kg, so that a very good pressing effect is obtained, abnormal phenomena such as dislocation and huge deformation do not occur between the indium columns, the chip and the circuit are firmly bonded, and the chip and the circuit have mechanical reliability.
In summary, the embodiments of the present invention provide a device flip-chip bonding method, in which a target device is mounted on a mechanical arm of an apparatus; horizontally aligning the target device with the circuit on the base by the upper indium column array and the lower indium column array; moving the vacuum cover downwards to form a closed processing chamber; heating the device in the closed processing chamber to a preset temperature, introducing mixed gas of nitrogen and formic acid to reach a preset time, and reducing an oxide layer on the surface of the indium column; and when the oxide layer on the surface of the indium column is completely reduced and the indium column is melted into liquid indium balls, slowly cooling, stopping cooling to a preset temperature range, keeping for a preset time in a vacuum environment to solidify the indium balls into solid, and pressing the upper and lower indium columns at a preset pressure to complete pressing. The cold-press welding process is used as an integral frame, a part of reflow welding process is skillfully compatible with the cold-press welding frame, the indium columns with the temperature of 130-150 ℃ are pressed under the pressure of 0.1-1 kg, a very good pressing effect is obtained, abnormal phenomena such as dislocation, huge deformation and the like do not occur between the indium columns, and the precision and the reliability of flip chip welding of the device are improved.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
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| CN202110976160.XA CN113690150A (en) | 2021-08-24 | 2021-08-24 | A method for flip-chip bonding of devices |
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| CN202110976160.XA CN113690150A (en) | 2021-08-24 | 2021-08-24 | A method for flip-chip bonding of devices |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116490055A (en) * | 2023-04-27 | 2023-07-25 | 本源量子计算科技（合肥）股份有限公司 | Method for processing substrate and manufacturing flip quantum chip |
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2021
- 2021-08-24 CN CN202110976160.XA patent/CN113690150A/en active Pending
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| CN1937190A (en) * | 2006-10-13 | 2007-03-28 | 中国科学院上海技术物理研究所 | Micromelting return reinforcing method for infrared focal plane array device mixed-interconnecting indium column |
| US20110011531A1 (en) * | 2009-07-20 | 2011-01-20 | Set North America, Llc | Method of plasma preparation of metallic contacts to enhance mechanical and electrical integrity of subsequent interconnect bonds |
| JP2015179796A (en) * | 2014-03-18 | 2015-10-08 | 株式会社坂本電機製作所 | Reflow method and reflow device used for reflow method |
| CN109877479A (en) * | 2019-03-29 | 2019-06-14 | 中国科学院上海技术物理研究所 | A two-step flip welding process method for focal plane detector |
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