CN113671000A - Matrix type broad-spectrum substance detection sensor built based on semiconductor functional material - Google Patents
Matrix type broad-spectrum substance detection sensor built based on semiconductor functional material Download PDFInfo
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- CN113671000A CN113671000A CN202110880464.6A CN202110880464A CN113671000A CN 113671000 A CN113671000 A CN 113671000A CN 202110880464 A CN202110880464 A CN 202110880464A CN 113671000 A CN113671000 A CN 113671000A
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- 238000001514 detection method Methods 0.000 title claims abstract description 80
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 239000011159 matrix material Substances 0.000 title claims abstract description 29
- 239000000126 substance Substances 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 title claims abstract description 26
- 238000006243 chemical reaction Methods 0.000 claims abstract description 25
- 239000007789 gas Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 16
- 239000003054 catalyst Substances 0.000 claims description 13
- 239000008204 material by function Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 8
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 230000003321 amplification Effects 0.000 claims 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 231100000614 poison Toxicity 0.000 description 2
- 230000007096 poisonous effect Effects 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- VBMVTYDPPZVILR-UHFFFAOYSA-N iron(2+);oxygen(2-) Chemical class [O-2].[Fe+2] VBMVTYDPPZVILR-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical class [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/307—Disposable laminated or multilayered electrodes
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- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The invention provides a matrix type broad-spectrum substance detection sensor built based on a semiconductor functional material, and belongs to the technical field of sensors. This matrix broad spectrum material detection sensor based on semiconductor function material is built, including the signal conversion board, be provided with the communication interface that is used for being connected with the host computer on the signal conversion board, be provided with the semiconductor detection component that a plurality of is the matrix and arranges being used for detecting different gas on the signal conversion board, every semiconductor detection component is all including setting up in the detection that the signal conversion board openly is used for sensing gaseous material with the component, set up at the reference component and the differential amplifier circuit at the signal conversion board back, the component is connected in the first input of differential amplifier circuit for the detection, the reference component is connected in the second input of differential amplifier circuit, the output and the communication interface that every semiconductor detection component was regarded as to the output of differential amplifier circuit are connected. The invention solves the problems of single detection and poor detection accuracy.
Description
Technical Field
The invention belongs to the technical field of sensors, and particularly relates to a matrix type broad-spectrum substance detection sensor built based on semiconductor functional materials.
Background
The sensor is a detection device which can sense the information to be measured and convert the detected information into electric signals or other information in required forms according to a certain rule for output, and is widely applied to the aspects of water conservancy, geology, meteorology, chemical industry, medical treatment and health and the like.
With the increasing of living standard, building decoration is more and more entered into people's life, can improve people's living quality of living through decorating, but what accompanies is that a large amount of poisonous harmful substance that contains in the ornamental material, along with people's increasing of this degree of attention to this day to the requirement of building house ornamentation field to environmental protection material is increasing day by day, and the market is to the demand of all kinds of high sensitivity poisonous harmful gas sensor rapid growth. At present, the gas sensor mainly comprises a semiconductor gas sensor, an electrochemical gas sensor and an infrared gas sensor. The sensors have the problems of poor detection stability, low detection sensitivity, single detection, poor universality and the like, so that the toxic and harmful gas is not accurately and comprehensively detected, and the detection effect is limited.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a matrix-type broad-spectrum substance detection sensor constructed based on semiconductor functional materials, so as to solve the problem in the prior art that the detection effect of the sensor is poor due to single detection and poor detection accuracy.
The purpose of the invention can be realized by the following technical scheme: the utility model provides a matrix broad spectrum nature substance detection sensor based on semiconductor function material is built, includes the signal conversion board, be provided with on the signal conversion board and be used for the communication interface who is connected with the host computer, its characterized in that, be provided with the semiconductor detection element that is used for that the matrix was arranged and detects different gas on the signal conversion board, every semiconductor detection element is all including setting up in the detection that the signal conversion board openly is used for sensing gaseous material with component, setting at the reference at the signal conversion board back with component and differential amplifier circuit, detect with component connection in differential amplifier circuit's first input, connect in differential amplifier circuit's second input with the component for the reference, the output of differential amplifier circuit as every semiconductor detection element with communication interface connects.
In the matrix type broad-spectrum substance detection sensor built based on the semiconductor functional material, the detection element is provided with an insulating substrate, an electrode and a gas-sensitive layer, the electrode is printed on the insulating substrate, and the gas-sensitive layer is formed on the insulating substrate; the reference element has an insulating substrate and an electrode printed on the insulating substrate.
In the matrix broad-spectrum substance detection sensor built based on the semiconductor functional material, the gas-sensitive layer is made of one or more of tin oxide series, zinc oxide series or iron oxide series semiconductor materials, and the gas-sensitive layer is formed on the insulating substrate in an ultra-micronized or thin-film mode during implementation.
In the matrix type broad-spectrum substance detection sensor built based on the semiconductor functional material, the gas sensitive layer is also covered with a SiO2 filter layer. The interference of macromolecular gas such as ethanol and the like on the detection of micromolecular H2 can be filtered out by the SiO2 filter layer.
In the matrix type broad-spectrum substance detection sensor built based on the semiconductor functional material, the gas sensitive layer covers the Pd-Pt catalyst layer, and the Pd-Pt catalyst layer is arranged between the gas sensitive layer and the SiO2 filter layer.
In the matrix type broad-spectrum substance detection sensor built on the basis of the semiconductor functional material, the detection element further comprises a first amplifier, and the reference element further comprises a second amplifier.
In the matrix type broad-spectrum substance detection sensor built on the basis of the semiconductor functional material, the impedance of the first amplifier is different from that of the second amplifier.
Compared with the prior art, the matrix type broad-spectrum substance detection sensor built based on the semiconductor functional material has the following advantages: the invention adopts matrix arrangement, realizes multi-element detection and eliminates the problem of single detection in the prior art; in addition, a reference element is combined with detection, and a differential amplifier is used for eliminating common-mode interference, so that the detection accuracy is improved; meanwhile, the weak signal is amplified, and the detection accuracy of the weak signal is improved.
Drawings
Fig. 1 is a schematic structural diagram of a matrix type broad-spectrum substance detection sensor constructed based on a semiconductor functional material according to a first embodiment.
Fig. 2 is a schematic structural diagram of a three-dimensional viewing angle of a matrix type broad-spectrum substance detection sensor constructed based on a semiconductor functional material according to the first embodiment.
Fig. 3 is a circuit block diagram of a semiconductor detection element according to the first embodiment.
Fig. 4 is a cross-sectional view of a semiconductor detection element according to the first embodiment.
Fig. 5 is a graph showing the relationship between the gas concentration and the resistance value in the detection of the semiconductor detection element according to the first embodiment.
Fig. 6 is a cross-sectional view of a semiconductor detection element according to a second embodiment.
In the figure, 1, a signal conversion plate; 2. a communication interface; 3. a semiconductor detection element; 4. a detection element; 5. a reference element; 6. a differential amplifier circuit; 7. an insulating substrate; 8. an electrode; 9. a gas-sensitive layer; 10. a reference resistance; 11. a first amplifier; 12. a second amplifier; 13. SiO22A filter layer; 14. a Pd-Pt catalyst layer; 15. a membrane layer.
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
The first embodiment is as follows:
as shown in fig. 1-3, the matrix type broad spectrum substance detection sensor built based on semiconductor functional material comprises a signal conversion board 1, a communication interface 2 for connecting with an upper computer is arranged on the signal conversion board 1, and a plurality of semiconductor detection elements 3 are arranged on the signal conversion board 1, the semiconductor detection elements 3 are arranged in a matrix, in this embodiment, the semiconductor detection elements 3 are arranged in a matrix of 3 × 4, and each semiconductor detection element 3 is used for detecting different gases.
Specifically, each of the semiconductor detection elements 3 includes a detection element 4, a reference element 5, and a differential amplifier circuit 6. Wherein, the element 4 for detection is arranged on the front surface of the signal conversion plate 1 to detect the gas substance; the reference element 5 is provided on the opposite side of the signal conversion plate 1, and does not detect a gaseous substance, but serves only as a reference. The differential amplifier circuit 6 is a differential amplifier, the detection element 4 is connected to a first input terminal of the differential amplifier circuit 6, the reference element 5 is connected to a second input terminal of the differential amplifier circuit 6, an output terminal of the differential amplifier circuit 6 is connected to the communication interface 2 as an output terminal of each semiconductor detection element 3, and the differential amplifier is used to cancel an interference signal, thereby achieving the purpose of common-mode interference resistance.
As shown in fig. 4, the detecting element 4 has an insulating substrate 7, two electrodes 8 and a gas sensing layer 9, the electrodes 8 are printed on the insulating substrate 7, the gas sensing layers 9 are formed on the insulating substrate 7, the two electrodes 8 are respectively disposed on two sides of the gas sensing layer 9, one end of each electrode 8 is connected to the gas sensing layer 9, and the other end of each electrode 8 is connected to the signal conversion plate 1. The differential amplifier circuit 6 is etched in the signal conversion plate 1, and a lead is also etched in the signal conversion plate 1, and the electrode 8 is connected to the differential amplifier via the lead. Similarly, the reference element 5 has an insulating substrate 7, electrodes 8 and a reference resistor 10, the two electrodes 8 are connected to both ends of the reference resistor 10, and the electrodes 8 are connected to a differential amplifier via a wire.
In order to improve the detection sensitivity of the semiconductor detection element 3, a first amplifier 11 is connected to the detection element 4, a second amplifier 12 is connected to the reference element 5, the first amplifier 11 and the second amplifier 12 have different impedances, the first amplifier 11 and the second amplifier 12 are similarly disposed in the signal conversion plate 1, the electrode 8 of the detection element 4 is connected to the first amplifier 11 through a wire and then to a first input terminal of a differential amplifier, and the electrode 8 of the reference element 5 is connected to the second amplifier 12 through a wire and then to a second input terminal of the differential amplifier.
The gas sensing layer 9 is one or more of tin oxide semiconductor materials, zinc oxide semiconductor materials or iron oxide semiconductor materials, and the gas sensing layer 9 is formed on the insulating substrate 7 in an ultrafine particle or thin film manner. In this embodiment, the gas sensing layer 9 is described by taking a zinc oxide-based ZnO film as an example, and the SiO2 filter layer 13 is covered on the ZnO film. The interference of macromolecular gas such as ethanol and the like on the detection of micromolecular H2 can be filtered out by the SiO2 filtering layer 13. The gas-sensitive layer 9 using the ZnO film layer has characteristics as shown in fig. 5, and the gas concentration and the resistance value are substantially in a straight line.
Example two:
as shown in fig. 6, the present embodiment is a further improvement based on the first embodiment, and the difference between the present embodiment and the first embodiment is that: a Pd — Pt catalyst layer 14 is further covered on the gas sensing layer 9, the Pd — Pt catalyst layer 14 is disposed between the gas sensing layer 9 and the SiO2 filter layer 13, and a separator layer 15 is further disposed between the Pd — Pt catalyst layer 14 and the gas sensing layer 9. In this structure, since the barrier layer 15 is provided between the ZnO film layer of semiconductor material and the Pd — Pt catalyst layer 14, the resistance value in the air increases by about one order of magnitude, and as a result, the sensitivity of the element to detect gas increases, because Zn is excessive in ZnO, Zn ions adsorb oxygen in the air, and adsorption of oxygen in the atmosphere is promoted by the catalyst, so that the grain boundary barrier increases, and the resistance value R of the air in the element increases. When the reducing gas is brought into contact with the alloy at this time, the grain boundary barrier is lowered and the conductivity is increased. Particularly, after the catalyst is added, the catalyst is filled between the semiconductor crystal grains to reduce the contact potential barrier, thereby further improving the gas-sensitive effect.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (7)
1. A matrix type broad-spectrum substance detection sensor built based on semiconductor functional materials comprises a signal conversion board (1), wherein a communication interface (2) used for being connected with an upper computer is arranged on the signal conversion board (1), the matrix type broad-spectrum substance detection sensor is characterized in that a plurality of semiconductor detection elements (3) arranged in a matrix type and used for detecting different gases are arranged on the signal conversion board (1), each semiconductor detection element (3) comprises an element (4) for detection, arranged on the front side of the signal conversion board (1) and used for sensing gas substances, an element (5) for reference and a differential amplification circuit (6) arranged on the back side of the signal conversion board (1), the element (4) for detection is connected to a first input end of the differential amplification circuit (6), the element (5) for reference is connected to a second input end of the differential amplification circuit (6), the output end of the differential amplifying circuit (6) is connected with the communication interface (2) as the output end of each semiconductor detection element (3).
2. The matrix type broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 1, wherein the detection element (4) is provided with an insulating substrate (7), an electrode (8) and a gas-sensitive layer (9), the electrode (8) is printed on the insulating substrate (7), and the gas-sensitive layer (9) is formed on the insulating substrate (7); the reference element (5) comprises an insulating substrate (7), an electrode (8) and a reference resistor (10), wherein the electrode (8) is printed on the insulating substrate (7) and is connected with the reference resistor (10).
3. The matrix type broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 2, characterized in that the gas-sensitive layer (9) is one or more of tin oxide-based, zinc oxide-based or iron oxide-based semiconductor materials, and the gas-sensitive layer (9) is formed on the insulating substrate (7) in an ultra-micronized or thin film manner.
4. The matrix type broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 2 or 3, characterized in that the gas-sensitive layer (9) is further covered with a SiO2 filter layer (13).
5. The matrix type broad-spectrum substance detection sensor constructed based on semiconductor functional materials according to claim 4, wherein the gas sensing layer (9) is covered with a Pd-Pt catalyst layer (14), the Pd-Pt catalyst layer (14) is arranged between the gas sensing layer (9) and a SiO2 filter layer (13), and a diaphragm layer (15) is further arranged between the Pd-Pt catalyst layer (14) and the gas sensing layer (9).
6. The matrix-type broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 2 or 3, characterized in that the detection element (4) further comprises a first amplifier (11), and the reference element (5) further comprises a second amplifier (12).
7. The matrix broad-spectrum substance detection sensor built on the basis of semiconductor functional materials according to claim 6, characterized in that the impedances of the first amplifier (11) and the second amplifier (12) are different.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2021108470293 | 2021-07-27 | ||
| CN202110847029 | 2021-07-27 |
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| Publication Number | Publication Date |
|---|---|
| CN113671000A true CN113671000A (en) | 2021-11-19 |
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| CN202110880464.6A Pending CN113671000A (en) | 2021-07-27 | 2021-08-02 | Matrix type broad-spectrum substance detection sensor built based on semiconductor functional material |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101907600A (en) * | 2010-07-30 | 2010-12-08 | 山东科技大学 | A Measuring Device of Mine Dust Concentration Based on Differential Principle |
| CN103675048A (en) * | 2013-11-18 | 2014-03-26 | 西安交通大学 | Metal-oxide gas sensor based on MEMS (Micro-Electro-Mechanic System) and preparation technology thereof |
| US20150020577A1 (en) * | 2012-01-30 | 2015-01-22 | King Abdullah University Of Science And Technology | Gas sensor |
| CN106841325A (en) * | 2017-01-18 | 2017-06-13 | 西安交通大学 | One kind is based on semiconductor gas sensor array detection exhaled gas device |
| CN206609859U (en) * | 2017-04-19 | 2017-11-03 | 西安航空职业技术学院 | A kind of air quality real-time monitoring system |
| CN112585455A (en) * | 2018-08-10 | 2021-03-30 | Tdk株式会社 | Gas sensor |
| CN216285046U (en) * | 2021-07-27 | 2022-04-12 | 浙江华才检测技术有限公司 | Matrix type broad-spectrum substance detection sensor built based on semiconductor functional material |
-
2021
- 2021-08-02 CN CN202110880464.6A patent/CN113671000A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101907600A (en) * | 2010-07-30 | 2010-12-08 | 山东科技大学 | A Measuring Device of Mine Dust Concentration Based on Differential Principle |
| US20150020577A1 (en) * | 2012-01-30 | 2015-01-22 | King Abdullah University Of Science And Technology | Gas sensor |
| CN103675048A (en) * | 2013-11-18 | 2014-03-26 | 西安交通大学 | Metal-oxide gas sensor based on MEMS (Micro-Electro-Mechanic System) and preparation technology thereof |
| CN106841325A (en) * | 2017-01-18 | 2017-06-13 | 西安交通大学 | One kind is based on semiconductor gas sensor array detection exhaled gas device |
| CN206609859U (en) * | 2017-04-19 | 2017-11-03 | 西安航空职业技术学院 | A kind of air quality real-time monitoring system |
| CN112585455A (en) * | 2018-08-10 | 2021-03-30 | Tdk株式会社 | Gas sensor |
| CN216285046U (en) * | 2021-07-27 | 2022-04-12 | 浙江华才检测技术有限公司 | Matrix type broad-spectrum substance detection sensor built based on semiconductor functional material |
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