CN113644136A - Avalanche diode based on transverse structure and preparation method thereof - Google Patents
Avalanche diode based on transverse structure and preparation method thereof Download PDFInfo
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Abstract
本发明公开了一种基于横向结构的雪崩二极管及其制备方法，所述方法包括：按照第一生长参数，基于衬底层生长N极性GaN层；按照第二生长参数，基于所述N极性GaN层生长n型AlxGa1‑ xN势垒层，以得到AlxGa1‑xN/GaN异质结；对所述AlxGa1‑xN/GaN异质结进行刻蚀操作，以在所述n型AlxGa1‑xN势垒层两侧刻蚀出第一凹槽和第二凹槽，以及在所述N极性GaN层和所述n型AlxGa1‑ xN势垒层上方刻蚀出第三凹槽，其中，所述第一凹槽和所述第二凹槽使所述AlxGa1‑xN/GaN异质结形成台面结构；在所述第一凹槽和所述第二凹槽中进行蒸发溅射处理，以得到肖特基接触电极和欧姆接触电极。本发明制备的所述二极管能够利用较高的载流子迁移率和饱和漂移速度，提高工作频率，提高二极管的应用范围。
The invention discloses an avalanche diode based on a lateral structure and a preparation method thereof. The method includes: growing an N-polarity GaN layer based on a substrate layer according to a first growth parameter; An n-type AlxGa1-xN barrier layer is grown on the GaN layer to obtain an AlxGa1 - xN /GaN heterojunction; an etching operation is performed on the AlxGa1 - xN /GaN heterojunction , to etch a first groove and a second groove on both sides of the n-type Al x Ga 1-x N barrier layer, and to etch the N-polar GaN layer and the n-type Al x Ga 1 A third groove is etched above the N barrier layer, wherein the first groove and the second groove make the AlxGa1 - xN /GaN heterojunction form a mesa structure; Evaporative sputtering treatment is performed in the groove and the second groove to obtain Schottky contact electrodes and ohmic contact electrodes. The diode prepared by the invention can utilize higher carrier mobility and saturation drift speed to increase the operating frequency and increase the application range of the diode.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and particularly relates to an avalanche diode based on a transverse structure and a preparation method thereof.
Background
An Avalanche diode, also called as an Avalanche Transit Time (IMPATT) diode, is a solid-state microwave power source and has ultrahigh output power and good direct current-alternating current power, and in addition, the Avalanche diode based on a GaN gallium nitride substrate has injection delay and Transit delay, can generate Time domain alternating current negative resistance, and also has larger current density and power density. Therefore, the avalanche diode based on the GaN gallium nitride substrate is widely applied in the fields of communication, radar systems, microwave power, aerospace and the like.
However, in the prior art, the avalanche diode based on the GaN substrate is generally a vertical structure, and after a GaN/AlGaN heterojunction is introduced into the vertical structure and a two-dimensional electron gas is formed, carriers can drift in a direction perpendicular to the two-dimensional electron gas, so that the mobility of the vertical structure is a bulk mobility rather than a two-dimensional electron gas mobility, and further, for a GaN material, the GaN material has high frequency advantages mainly represented by a higher carrier saturation drift velocity and a high mobility at the two-dimensional electron gas, so that the vertical structure avalanche diode based on the GaN substrate cannot exert high frequency performance, and an application scenario is limited.
Disclosure of Invention
In order to solve the above problems in the prior art, the present invention provides an avalanche diode with a lateral structure and a method for manufacturing the avalanche diode. The technical problem to be solved by the invention is realized by the following technical scheme:
a lateral structure based diode, the diode comprising: substrate layer, N-polarity GaN layer, and N-type AlxGa1-xThe Schottky contact structure comprises an N barrier layer, a first groove, a second groove, a third groove, a Schottky contact electrode and an ohmic contact electrode; the N-polarity GaN layer is positioned above the substrate layer; the n-type AlxGa1-xAn N barrier layer on the N poleA GaN layer; the N-polar GaN layer and the N-type AlxGa1-xAl is formed by N barrier layerxGa1-xN/GaN heterojunction, said AlxGa1-xA first groove and a second groove are correspondingly arranged at two sides of the N/GaN heterojunction, wherein the first groove and the second groove respectively contain the N-type AlxGa1-xThe whole area on two sides of the N barrier layer and the partial area containing two sides of the N polarity GaN layer form a mesa structure by the first groove and the second groove in the AlxGa1-xN/GaN heterojunction; the Schottky contact electrode is positioned in the first groove, and the ohmic contact electrode is positioned in the second groove; the n-type AlxGa1-xAnd a third groove is corresponding to a partial region above the N barrier layer and is communicated with the second groove.
The invention has the beneficial effects that:
the diode prepared by the invention can utilize higher carrier mobility and saturation drift velocity, improve the working frequency and improve the application range of the diode.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
Drawings
Fig. 1 is a schematic diagram of an avalanche diode structure based on a lateral structure according to an embodiment of the present invention;
fig. 2 is a schematic flow chart of a lateral structure-based avalanche diode manufacturing method according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a lateral structure-based avalanche diode fabrication process according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to specific examples, but the embodiments of the present invention are not limited thereto.
Example one
Referring to fig. 1, fig. 1 is a schematic diagram of an avalanche diode structure based on a lateral structure according to an embodiment of the present invention, where the diode includes: substrate layer 1, N-polarity GaN layer 2, N-type AlxGa1-xAn N-barrier layer 3, a schottky contact electrode 4, and an ohmic contact electrode 5.
The diode of the present invention is a high electron mobility transistor with low ohmic contact resistance. The schottky contact electrode serves as an anode, and the ohmic contact electrode serves as a cathode.
Optionally, the N-polar GaN layer 2 is located above the substrate layer 1.
Optionally, the n-type AlxGa1-xAn N-barrier layer 3 is located over the N-polar GaN layer 2.
Optionally, the N-polar GaN layer 2 and the N-type AlxGa1-xThe N barrier layer 3 constitutes AlxGa1-xN/GaN heterojunction, said AlxGa1-xA first groove and a second groove are correspondingly arranged at two sides of the N/GaN heterojunction, wherein the first groove and the second groove respectively contain the N-type AlxGa1-xThe whole area on two sides of the N barrier layer and the partial area containing two sides of the N polarity GaN layer form a mesa structure by the first groove and the second groove of the AlxGa1-xN/GaN heterojunction.
The Al isxGa1-xThe N-barrier layer can modulate the electron concentration in the channel, and the heterojunction can ensure high electron mobility.
Optionally, the schottky contact electrode 4 is located in the first groove, and the ohmic contact electrode 5 is located in the second groove.
The Schottky contact electrode and the ohmic contact electrode can control the conduction direction of the diode to be consistent with the concentration direction of the two-dimensional electron gas, so that the working frequency and power of the diode are improved, and the application of the diode in high-frequency work is realized.
Optionally, the n-type AlxGa1-xThe partial region above the N-barrier layer 3 corresponds to a third groove, and the third groove communicates with the second groove.
In summary, the invention adopts the AlxGa1-xN/GaN heterojunction, the two-dimensional electron gas can be formed in the conductive channel through the AlxGa1-xN/GaN heterojunction, and the electron concentration in the conductive channel can be flexibly controlled by adjusting the X value in the AlxGa 1-xN. In addition, the avalanche diode has a HEMT (High Electron Mobility Transistor) -like transverse structure, and the transverse structure can ensure that the direction of two-dimensional Electron gas in a diode channel is the same as the Electron drift direction, so that the Electron saturation drift speed and the Mobility are higher than those of a bulk gallium nitride material, the diode can be applied to higher working frequency, and two-dimensional electrons in the channel can have higher concentration, and the diode has better power performance.
Example two
Referring to fig. 2, fig. 2 is a schematic flow chart of a lateral structure-based avalanche diode manufacturing method according to an embodiment of the present invention, the method including:
step 1: growing an N-polarity GaN layer based on the substrate layer according to a first growth parameter, wherein the first growth parameter comprises: a triethyl gallium flow parameter, a first nitrogen flow parameter, a first growth temperature parameter, a first growth pressure parameter, and a first growth time parameter.
The invention carries out N-polarity GaN layer and N-type Al through the preset reaction chamberxGa1-xThe growth of the N-barrier layer, the predetermined reaction chamber being selected by a person skilled in the art according to the business needs, the invention is not particularly limited. In the present invention, the predetermined reaction chamber is exemplified by an MOCVD (Metal-Organic Chemical Vapor Deposition) reaction chamber.
The material of the substrate layer is determined by those skilled in the art according to the business needs, and the invention is not limited, for example, the substrate layer is a sapphire substrate layer or a silicon nitride substrate layer.
The preset reaction chamber is provided with a first growth parameter, and the first growth parameter is set by a person skilled in the art according to business needs, which is not limited by the invention. Through experimental verification, the first growth parameter of the invention is preferentially set as: the method comprises the following steps of enabling a triethyl gallium flow parameter to be 650sccm, a first nitrogen flow parameter to be 35sccm, a first growth temperature parameter to be 970 ℃, a first growth pressure parameter to be 40Torr and a first growth time parameter to be 10min, wherein the triethyl gallium and the nitrogen are simultaneously introduced into a reaction chamber, and based on the first growth parameter, an N-polarity GaN layer with the thickness of 800nm can be obtained through growth on the surface of a substrate layer.
Optionally, before step 1, the method further includes:
step S1: and cleaning the substrate layer.
Step S2: and carrying out heat treatment operation on the cleaned substrate layer according to heat treatment parameters, wherein the heat treatment parameters comprise: vacuum degree parameter, hydrogen flow parameter, heat treatment pressure parameter, heat treatment temperature parameter and heat treatment time parameter.
The heat treatment parameters are set by those skilled in the art according to business needs, and the present invention is not limited thereto. For example, when the substrate layer is a sapphire substrate layer, the heat treatment parameters are set as: the vacuum degree parameter is 2X 10-2Torr, the heat treatment pressure parameter is 50Torr, the heat treatment temperature parameter is 900 ℃ and the heat treatment time parameter is 5 min.
Step S3: and performing nitridation treatment operation on the substrate layer after the thermal treatment according to nitridation treatment parameters to obtain a target substrate layer, wherein the nitridation treatment parameters comprise: nitriding temperature parameter, ammonia gas flow parameter and nitriding time parameter.
The nitridation parameters are set by those skilled in the art according to business needs, and the invention is not limited thereto. For example, when the substrate layer is a sapphire substrate layer, the nitridation processing parameters are set as follows: the nitridation temperature parameter is 1050 ℃, the ammonia gas flow parameter is 3000sccm, and the nitridation time parameter is 5 min.
The invention can improve the flatness of the surface of the substrate layer through cleaning treatment, heat treatment and nitriding treatment of the substrate layer, and can improve the growth of an N-polarity GaN layer and N-type AlxGa1-xQuality of the N-barrier layer.
Optionally, growing the N-polarity GaN layer based on the substrate layer according to the first growth parameter includes: and growing an N-polarity GaN layer based on the target substrate layer according to the first growth parameters.
The target substrate layer is a substrate layer with high flatness obtained through cleaning treatment, heat treatment and nitriding treatment.
Step 2: growing N-type Al based on the N-polarity GaN layer according to a second growth parameterxGa1-xN barrier layer to obtain AlxGa1-xAn N/GaN heterojunction, wherein the second growth parameter comprises: a trimethylaluminum flow parameter, a trimethylgallium flow parameter, a second nitrogen flow parameter, a second growth temperature parameter, a second growth pressure parameter, and a second growth time parameter.
And setting a second growth parameter in the preset reaction chamber, wherein the second growth parameter is set by a person skilled in the art according to business needs, and the invention is not limited. Through experimental verification, the second growth parameter of the invention is preferentially set as: the flow parameter of trimethylaluminum is 40sccm, the flow parameter of trimethylgallium is 605sccm, the flow parameter of second nitrogen is 10L, the temperature parameter of second growth is 1050 ℃, the pressure parameter of second growth is 100Torr, and the time parameter of second growth is 1min, based on the first growth parameter, the N-type Al with the thickness of 20nm can be obtained based on the growth of the N-polarity GaN layerxGa1-xAn N barrier layer.
The N-polar GaN layer and the N-type AlxGa1-xAl is formed by N barrier layerxGa1-xAn N/GaN heterojunction capable of ensuring high electron mobility.
By adjusting the AlxGa1-xThe value of X in the N barrier layer can adjust the concentration of two-dimensional electron gas, the depth of potential well and the like in the high electron mobility transistor. The invention uses X to take 0.2, namely Al0.2Ga0.8N is an example.
And step 3: for the AlxGa1-xEtching the N/GaN heterojunction to form N-type AlxGa1-xEtching a first groove and a second groove on two sides of the N barrier layer, and etching the N polar GaN layer and the N type Al layerxGa1-xEtching a third groove above the N barrier layer, wherein the first groove and the second grooveThe two grooves enable the AlxGa1-xN/GaN heterojunction to form a mesa structure.
For example, the Al is etched by ICP (inductively Coupled Plasma), i.e., a photolithography processxGa1-xAnd etching the N/GaN heterojunction.
Optionally, the first groove and the second groove respectively contain the n-type AlxGa1-xThe whole regions on two sides of the N barrier layer and the partial regions on two sides of the N polarity GaN layer; the third groove contains the n-type AlxGa1-xA partial region above the N-barrier layer, the third groove communicating with the second groove.
Specifically, in the n-type AlxGa1-xAnd etching areas on two sides of the N barrier layer downwards to a certain depth respectively to obtain a first groove and a second groove, wherein the first groove and the second groove enable the AlxGa1-xN/GaN heterojunction to form a mesa structure. After obtaining the mesa, the n-type Al is addedxGa1-xAnd etching a third groove above the N barrier layer.
Optionally, the first groove and the second groove are respectively located in the AlxGa1-xOne of two sides of the N/GaN heterojunction, the second groove is positioned on the AlxGa1-xThe other of the two sides of the N/GaN heterojunction.
For example, the first groove is located in the AlxGa1-xA left region of the N/GaN heterojunction, the second groove being located in the AlxGa1-xThe right region of the N/GaN heterojunction.
And 4, step 4: and carrying out evaporation sputtering treatment in the first groove and the second groove to obtain a Schottky contact electrode and an ohmic contact electrode.
Optionally, the step 4 includes:
step 4-1: and evaporating and sputtering a metal Ni/Au double-layer structure in the first groove to obtain a Schottky contact electrode.
Optionally, the Ni/Au bilayer structure corresponds to a first metal thickness parameter, where the first metal thickness parameter includes: the thickness parameter of metal Ni nickel and the thickness parameter of metal Au gold.
The first metal thickness parameter is determined by those skilled in the art according to business needs, and the present invention is not limited thereto, for example, the thickness of the metal Ni is 30nm, and the thickness of the metal Au is 120 nm.
Step 4-2: evaporating and sputtering a metal Ti/Al/Ti/Au multilayer structure in the second groove, and carrying out thermal annealing treatment on the metal Ti/Al/Ti/Au multilayer structure according to thermal annealing parameters to obtain an ohmic contact electrode, wherein the thermal annealing parameters comprise: a thermal annealing temperature parameter, a second hydrogen parameter, and a thermal annealing time parameter.
Optionally, the Ti/Al/Ti/Au multilayer structure corresponds to a second metal thickness parameter, where the second metal thickness parameter includes: the thickness parameter of the first metal Ti-nickel, the thickness parameter of the metal Al-aluminum, the thickness parameter of the second metal Ti and the thickness parameter of the metal Au-gold.
The second metal thickness parameter is determined by a person skilled in the art according to business needs, but the invention is not limited thereto, for example, the first metal Ti nickel thickness parameter is 10nm, the metal Al aluminum thickness parameter is 80nm, the second metal Ti thickness parameter is 30nm, and the metal Au gold thickness parameter is 30 nm.
The thermal annealing parameters are determined by those skilled in the art according to business needs, but the invention is not limited, for example, the thermal annealing temperature parameter is 850 ℃, and the thermal annealing time parameter is 60 s.
Referring to fig. 3, fig. 3 is a schematic diagram of a lateral structure-based avalanche diode manufacturing process according to an embodiment of the present invention. Wherein, fig. 3(a) shows that an N-polarity GaN layer is grown based on a substrate layer, for example, the length of the substrate layer and the N-polarity GaN layer is 2.5 μm, and the thickness of the grown N-polarity GaN layer is 2 μm; FIG. 3(b) shows the growth of N-type Al based on the N-polar GaN layerxGa1-xAn N barrier layer, and the N polar GaN layer and the N type AlxGa1-xAl is formed by N barrier layerxGa1-xN/GaN heterojunction, e.g. the N-type AlxGa1-xThe length of the N barrier layer is 2.5 mu m, and the thickness is 20 nm;FIG. 3(c) shows AlxGa1-xEtching the first and second grooves on both sides of the N/GaN heterojunction, e.g., in AlxGa1-xEtching a first groove on the left side of the N/GaN heterojunction, and etching Al on the first groovexGa1-xEtching a second groove on the right side of the N/GaN heterojunction, wherein the first groove and the second groove enable Al to be formedxGa1-xThe N/GaN heterojunction forms a mesa structure, wherein the depth of the first groove and the second groove is 25-50nm, and the width of the first groove and the second groove is 1 micrometer; FIG. 3(d) shows the n-type AlxGa1-xEtching a third groove in the right side region above the N barrier layer, wherein the depth of the third groove is 5-15nm, and the length of the third groove is 180-420 nm; fig. 3(e) shows that a schottky contact electrode, i.e., an anode, is obtained in the first groove by an evaporation sputtering process, and an ohmic contact electrode, i.e., a cathode, is obtained in the second groove by an evaporation sputtering process.
In summary, the invention adopts the AlxGa1-xN/GaN heterojunction, the two-dimensional electron gas can be formed in the conductive channel through the AlxGa1-xN/GaN heterojunction, and the electron concentration in the conductive channel can be flexibly controlled by adjusting the X value in the AlxGa 1-xN. In addition, the avalanche diode has a HEMT-like transverse structure, and the transverse structure can ensure that the direction of two-dimensional electron gas in a diode channel is the same as the drift direction of electrons, so that the saturated drift velocity and the mobility of the electrons are higher than those of a bulk gallium nitride material, the diode can be applied to higher working frequency, and the two-dimensional electrons in the channel have higher concentration, so that the diode has better power performance.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
While the present application has been described in connection with various embodiments, other variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed application, from a review of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps, and the word "a" or "an" does not exclude a plurality. A single processor or other unit may fulfill the functions of several items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (5)
1. A lateral structure based diode, comprising: substrate layer, N-polarity GaN layer, and N-type AlxGa1-xThe N barrier layer, the Schottky contact electrode and the ohmic contact electrode;
the N-polarity GaN layer is positioned above the substrate layer;
the n-type AlxGa1-xThe N barrier layer is positioned above the N polarity GaN layer;
the N-polar GaN layer and the N-type AlxGa1-xAl is formed by N barrier layerxGa1-xN/GaN heterojunction, said AlxGa1-xA first groove and a second groove are correspondingly arranged at two sides of the N/GaN heterojunction, wherein the first groove and the second groove respectively contain the N-type AlxGa1-xThe whole area on two sides of the N barrier layer and the partial area containing two sides of the N polarity GaN layer form a mesa structure by the first groove and the second groove in the AlxGa1-xN/GaN heterojunction;
the Schottky contact electrode is positioned in the first groove, and the ohmic contact electrode is positioned in the second groove;
the n-type AlxGa1-xAnd a third groove is corresponding to a partial region above the N barrier layer and is communicated with the second groove.
2. A method for preparing a diode based on a transverse structure is characterized by comprising the following steps:
step 1: growing an N-polarity GaN layer based on the substrate layer according to a first growth parameter, wherein the first growth parameter comprises: a triethyl gallium flow parameter, a first nitrogen flow parameter, a first growth temperature parameter, a first growth pressure parameter, and a first growth time parameter;
step 2: growing N-type Al based on the N-polarity GaN layer according to a second growth parameterxGa1-xN barrier layer to obtain AlxGa1-xAn N/GaN heterojunction, wherein the second growth parameter comprises: a trimethylaluminum flow parameter, a trimethylgallium flow parameter, a second nitrogen flow parameter, a second growth temperature parameter, a second growth pressure parameter, and a second growth time parameter;
and step 3: for the AlxGa1-xEtching the N/GaN heterojunction to form N-type AlxGa1-xEtching a first groove and a second groove on two sides of the N barrier layer, and etching the N polar GaN layer and the N type Al layerxGa1-xEtching a third groove above the N barrier layer, wherein the first groove and the second groove enable the AlxGa1-xN/GaN heterojunction to form a mesa structure;
and 4, step 4: and carrying out evaporation sputtering treatment in the first groove and the second groove to obtain a Schottky contact electrode and an ohmic contact electrode.
3. The method of claim 2, wherein prior to step 1, the method further comprises:
cleaning the substrate layer;
and carrying out heat treatment operation on the cleaned substrate layer according to heat treatment parameters, wherein the heat treatment parameters comprise: vacuum degree parameter, hydrogen flow parameter, heat treatment pressure parameter, heat treatment temperature parameter and heat treatment time parameter;
and performing nitridation treatment operation on the substrate layer after the thermal treatment according to nitridation treatment parameters to obtain a target substrate layer, wherein the nitridation treatment parameters comprise: nitriding temperature parameter, ammonia gas flow parameter and nitriding time parameter;
the growing of the N-polarity GaN layer based on the substrate layer according to the first growth parameter comprises the following steps: and growing an N-polarity GaN layer based on the target substrate layer according to the first growth parameters.
4. The method of claim 2, wherein the first and second grooves each comprise the n-type AlxGa1-xThe whole regions on two sides of the N barrier layer and the partial regions on two sides of the N polarity GaN layer; the third groove contains the n-type AlxGa1-xA partial region above the N-barrier layer, the third groove communicating with the second groove.
5. The method of claim 2, wherein the first recess and the second recess are located at the Al, respectivelyxGa1-xOne of two sides of the N/GaN heterojunction, the second groove is positioned on the AlxGa1-xThe other side of the two sides of the N/GaN heterojunction, and the step 4 comprises:
evaporating and sputtering a metal Ni/Au double-layer structure in the first groove to obtain a Schottky contact electrode;
evaporating and sputtering a metal Ti/Al/Ti/Au multilayer structure in the second groove, and carrying out thermal annealing treatment on the metal Ti/Al/Ti/Au multilayer structure according to thermal annealing parameters to obtain an ohmic contact electrode, wherein the thermal annealing parameters comprise: a thermal annealing temperature parameter, a second hydrogen parameter, and a thermal annealing time parameter.
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Citations (8)
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