CN113630564A - Detection device and detection method - Google Patents
Detection device and detection method Download PDFInfo
- Publication number
- CN113630564A CN113630564A CN202010385001.8A CN202010385001A CN113630564A CN 113630564 A CN113630564 A CN 113630564A CN 202010385001 A CN202010385001 A CN 202010385001A CN 113630564 A CN113630564 A CN 113630564A
- Authority
- CN
- China
- Prior art keywords
- charge
- signal
- voltage conversion
- conversion device
- transfer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A probe apparatus, comprising: a photoelectric converter for converting incident light into electric charges and accumulating the electric charges; a transfer element for transferring the electric charges accumulated in the photoelectric converter; a converter for converting the electric charges in the photoelectric converter transferred via the transfer element into a voltage; a reset element for resetting a potential of the converter; and an amplifier for amplifying the voltage converted by the converter to generate a pixel signal and outputting the pixel signal to a read signal line for reading the pixel signal. A plurality of photoelectric converters and transfer elements arranged in the horizontal and vertical directions share an amplifier and a read signal line. The present invention can suppress the decrease in detection accuracy caused by the miniaturization of a CMOS sensor.
Description
Technical Field
The present application relates to the field of detection technologies, and in particular, to a detection apparatus and a detection method.
Background
A Charge Coupled Device (CCD), a Complementary Metal Oxide Semiconductor (CMOS) sensor, or the like has been used as a detection device, and multi-pixelation and miniaturization of a detection apparatus have also been advanced. The increase in the number of pixels and the miniaturization of the detecting device make the cell size of the pixels smaller, the ratio of the transistor area to the pixel area increases, and the area of the photodiode becomes smaller. As a result, the saturation charge amount and sensitivity of each pixel may be reduced, and the accuracy of detection may also be degraded.
Disclosure of Invention
The present invention is directed to provide a detecting device and a method thereof, which solve the problems of the related art, such as the decrease of the measuring accuracy due to the increase of the number of pixels and the miniaturization of the detecting device.
In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:
in a first aspect, an embodiment of the present invention provides a detection apparatus, where the apparatus includes:
a photoelectric conversion device for converting incident light into electric charges;
storage means for accumulating and storing the modulated charge signals;
transfer means for transferring the electric charge accumulated in the storage means;
charge-voltage conversion means for converting the charges in the storage means into voltage signals as pixel signals;
reset means for resetting a potential of the charge-voltage conversion means; and
the pixel comprises one said photoelectric conversion device and one said storage device and one said transfer device.
Wherein the reset means and the read signal line are shared by N × M pixels arranged in the horizontal and vertical directions.
Optionally, the detecting device further includes: modulation means for modulating the received charge;
optionally, the detecting device is characterized in that the photoelectric conversion device further comprises a reset device for resetting the photoelectric conversion device.
Optionally, the detecting device further includes: and a selection signal line for selectively reading out a signal of the image charge-voltage conversion device.
Optionally, the detecting device further includes: a load Metal Oxide Semiconductor (MOS) connected to the read signal line, wherein the load metal oxide semiconductor and an amplifying device constitute a source follower circuit.
Optionally, the detecting device is characterized in that the signal reading line reads out a signal in the charge-voltage conversion device after the reset device resets the charge-voltage conversion device.
Optionally, the transfer device controls the transfer of the charges in the corresponding storage device to the charge-to-voltage conversion device.
Alternatively, the detecting device may be characterized in that the signal reading line reads out the signal in the charge-voltage conversion device
In a second aspect, an embodiment of the present invention further provides a detection method, where the method is applied to the apparatus in the first aspect, and the method includes:
the selection signal line sends a selection signal to the charge-voltage conversion device so that the signal read line reads out a signal in the selected charge-voltage conversion device;
the reset device resets the selected voltage charging device;
the signal reading line reads out a signal in the charge-voltage conversion device;
the transfer device controls the charge in the corresponding storage device to be transferred into the charge-voltage conversion device;
the signal reading line reads out a signal in the charge-voltage conversion device.
Optionally, before the transfer device controls the charge in the corresponding storage device to be transferred to the charge-voltage conversion device, the reset device resets the charge-voltage conversion device.
Optionally, before the transfer device controls the charges in the corresponding storage device to be transferred to the charge-voltage conversion device, the signal read out by the signal read line from the charge-voltage conversion device does not include a valid signal.
Optionally, after the transfer device controls the charges in the corresponding storage device to be transferred to the charge-voltage conversion device, the signal read-out line reads out the signal in the charge-voltage conversion device, which includes a valid signal.
Optionally, the method is characterized in that the signal containing the valid signal and the signal not containing the valid signal are subjected to operation, so that the valid signal is removed from the invalid signal.
The invention has the beneficial effects that: an embodiment of the present invention provides a detection apparatus, including:
a photoelectric conversion device for converting incident light into electric charges; storage means for accumulating and storing the modulated charge signals; transfer means for transferring the electric charge accumulated in the storage means; charge-voltage conversion means for converting the charges in the storage means into voltage signals as pixel signals; reset means for resetting a potential of the charge-voltage conversion means; and the pixel comprises one said photoelectric conversion device and one said storage device and one said transfer device. Wherein the reduction in size of the device is realized by sharing the reset means and the read signal line among N × M pixels arranged in the horizontal and vertical directions, and the deterioration in detection quality due to the reduction in size of the detection means can be suppressed.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic diagram of a detection apparatus according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a detection apparatus according to an embodiment of the present invention;
fig. 3 is a timing diagram of a detecting device according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a 4 x 1 pixel sharing charge-to-voltage conversion device of a detection apparatus according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a detection method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
Fig. 1 is a schematic structural diagram of a detection apparatus according to an embodiment of the present invention, and as shown in fig. 1, the detection apparatus may include: a pixel array 10, a pixel unit 101, a charge-voltage conversion unit 20, a reset unit 30, a signal reading line 40, and a source follower unit 50.
The pixel array 10 and the pixel unit 101 are used for sensing light; the pixel cell 101 also includes a photoelectric conversion device and a storage device and a transfer device. And a charge-to-voltage conversion unit 20 connected to the pixel unit 101 for converting the charges generated by the pixel unit 101 into voltages. In which a plurality of pixel units 101 share the charge-voltage conversion unit 20.
In addition, the reset unit 30 is configured to reset the charge-voltage conversion unit 20, and the reset unit 30 resets the charge-voltage conversion unit 20 before the signal reading line 40 reads out the signal in the charge-voltage conversion unit 20.
And the source follower unit 50 is used for amplifying the signal in the charge-voltage conversion unit 20 and outputting the amplified signal to an analog-to-digital conversion unit (ADC), and the source follower unit 50 simultaneously isolates the signal between the charge-voltage conversion unit 20 and the ADC to reduce interference.
The pixel array 10 in this embodiment includes N × M pixel units 101 arranged in a matrix, wherein the N × M pixel units 101 may share the charge-voltage converting unit 20, the signal reading line 40 and the source follower unit 50, and circuit portions such as subsequent comparators may also be shared, which is not described in detail herein. N and M may be natural numbers equal to or greater than 1, which is not particularly limited in the embodiments of the present invention.
In summary, an embodiment of the present invention provides a detection apparatus, which includes:
a photoelectric conversion device for converting incident light into electric charges;
storage means for accumulating and storing the modulated charge signals;
transfer means for transferring the electric charge accumulated in the storage means;
charge-voltage conversion means for converting the charges in the storage means into voltage signals as pixel signals;
reset means for resetting a potential of the charge-voltage conversion means; and
the pixel unit comprises a photoelectric conversion device, a storage device and a transfer device;
n M pixels arranged in the horizontal direction and the vertical direction share the reset device and the reading signal line, so that the miniaturization of the device can be realized, and the detection precision can be improved.
Fig. 2 is a schematic diagram of a detection device sharing a charge-to-voltage conversion device in 2 × 2 pixel units in horizontal and vertical directions according to an embodiment of the present invention, as shown in fig. 2, optionally, the pixel unit 101 includes a reset unit 1010 (for resetting a photoelectric conversion unit), and a photoelectric conversion unit 1011 (for converting incident light into electric charges) connected to the storage unit 1013 through a modulation unit 1012; the storage unit 1013 is connected to the charge-voltage conversion unit 20 through the transfer unit 1014. Similarly, the second pixel unit 102 includes a reset unit 1020, a photoelectric conversion unit 1021, and a memory unit 1023 connected through a modulation unit 1022; the memory unit 1023 is connected to the charge-voltage conversion unit 20 through the transfer unit 1024. The same third pixel cell 103 includes a reset cell 1030, a photoelectric conversion cell 1031, connected to a memory cell 1033 via a modulation cell 1032; the memory cell 1033 is connected to the charge-voltage conversion unit 20 through the transfer unit 1034. The same fourth pixel unit 104 includes a reset unit 1040, a photoelectric conversion unit 1041, and is connected to the storage unit 1043 through a modulation unit 1042; the storage unit 1043 is connected to the charge-voltage converting unit 20 through the transfer unit 1044. What is realized in this embodiment is that 2 × 2 pixel cells share the charge-voltage conversion unit and the readout line as well as the source follower circuit and the analog-digital conversion unit (ADC). In other embodiments, any N × M pixels share the shared charge-to-voltage conversion unit and readout line, and the source follower circuit and analog-to-digital conversion unit (ADC). Examples N and M of the present invention are not particularly limited.
Fig. 3 is a schematic timing diagram of a detection apparatus sharing a charge-to-voltage conversion device in 2 × 2 pixel units in horizontal and vertical directions, where after the photoelectric conversion unit is reset by the reset signal shown in fig. 3, a modulation unit in the pixel is used to modulate the received charge, and modulate and integrate the signal in the photoelectric conversion unit with a pseudo random code. In other embodiments, the modulation code used for modulation may be an M sequence, a Gold sequence, or the like, and the modulation code is not particularly limited in the embodiments of the present invention. The modulation codes used in the embodiment of fig. 3 are modulation codes that are 0 degrees and 180 degrees out of phase with the transmitted wave, respectively. The embodiment of the present invention does not specifically limit the phase difference between the modulation code and the transmission wave. The signal in the photoelectric conversion unit is modulated in the embodiment of the present invention in order to calculate the distance information later in the ranging process.
301 the reset signal of the reset unit resets the charge voltage unit before each time the data read-out line reads out a signal in the charge voltage conversion unit. When a transfer unit (for transferring charges accumulated in the storage device) among the pixel units 101 to 104 is turned on, the corresponding storage unit (for accumulating and storing modulated charge signals) transfers the stored signal to a charge-voltage conversion unit for converting the charges in the storage device into a voltage signal as a pixel signal, and then read out through a read data line. The opening time of the transfer units 1014 to 1044 is controlled by a timing sequence, and in the embodiment of fig. 3, the timing sequence is that the transfer units 1014 to 1044 are opened in time sharing sequence. The turn-on timings of the transfer units 1014 to 1044 in the embodiment of the present invention are not particularly limited.
As shown in the embodiment of fig. 3, when the transfer units 1014 to 1044 are not turned on, the reset signal of the reset unit 301 resets the charge-voltage conversion unit 302, and then the data read line reads out a noise signal in the charge-voltage conversion unit. When the transfer units 1014 to 1044 are turned on, the signals of the corresponding memory cells are transferred to the charge-voltage conversion unit 302. The reset signal of the reset unit 301 resets the charge-voltage conversion unit 302, and the data read line reads out the noise signal and the useful signal in the charge-voltage conversion unit 302, so that the noise signal can be eliminated by the operation with the noise signal read out from the charge-voltage conversion unit 302 before, and the detection accuracy can be improved.
As shown in the embodiment of fig. 3, the selection signal is used to select a signal for reading out the charge-voltage conversion unit.
Fig. 4 is a schematic diagram of a 4 x 1 pixel sharing charge-to-voltage conversion device in a detection apparatus according to an embodiment of the present invention.
As shown in fig. 4, 4 × 1 shared pixels are depicted as being made up of 41, 42, 43, 44.
The pixel 41 includes a photodiode 411, a storage capacitor 412, and a transfer transistor 413. The pixel 42 includes a photodiode 421, a storage capacitor 422, and a transfer transistor 423. The pixel 43 includes a photodiode 431, a storage capacitor 432, and a transfer transistor 433. The pixel 44 includes a photodiode 441, a storage capacitor 442, and a transfer transistor 443.
Four pixels 41 to 44 of 4 × 1 sharing pixels share the reset transistor 43, the amplifying transistor 44, the selection transistor 45, and the charge-voltage conversion device 46. That is, the photodiodes 411 to 441 are connected to the charge-voltage conversion node 46 via the storage capacitors 412 to 442 and the transfer transistors 413 to 443.
After the charge-voltage conversion device node 46 is reset to a predetermined reference potential in response to a reset signal RST of the reset transistor 43, the charge modulation integrated generated by the photodiode 411 is stored in the storage capacitor 412, and is transferred to the charge-voltage conversion device node 46 in response to a transfer signal TR1 for controlling the transfer transistor 413. A signal in the charge-voltage conversion device is output to a readout data line as a pixel signal of the pixel 41 via the selection transistor 413.
After the pixel signal of the pixel 41 is output, after the charge-voltage conversion device node 46 is reset to a predetermined reference potential in response to the reset signal RST of the reset transistor 43, the charge modulation generated by the photodiode 421 is integrated and stored in the storage capacitor 422, and is transferred to the charge-voltage conversion device node 46 in response to the transfer signal TR2 for controlling the transfer transistor 423. A signal in the charge-voltage conversion device is output to the readout data line as a pixel signal of the pixel 42 via the selection transistor 423.
In the same manner, the electric charge generated by the photodiode 431 is transferred to the charge-voltage conversion node 46, and the pixel signal of the pixel 43 is output to the readout data line, and the electric charge generated by the photodiode 44 is transferred to the charge-voltage conversion node 46, and the pixel signal of the pixel 44 is output to the readout data line.
As described above, in the 4 × 1 shared pixel constituted by the four pixels 41 to 44, the charge-voltage conversion device node 46 and the readout data line are provided for the pixels 41 to 44, achieving miniaturization of the device.
In this example, pixels as constituent elements of the CMOS detection device are defined as pixels 41 to 44 having photodiodes 411 to 441 for photoelectric conversion and capacitors 412 to 442 for storing electric charges and transfer transistors 413 to 443 for transferring electric charges. However, the hardware pixel includes not only the photodiode and the transfer transistor but also a reset transistor, an amplification transistor, a selection transistor, and a floating diffusion node. For example, an assembly of four pixels of a vertical pixel, a reset transistor, an amplification transistor, a selection transistor, and a charge-voltage conversion node is referred to as a "4 × 1 shared pixel".
Similarly, in the embodiment, 2 × 3 shared pixels may be provided, and an assembly of 6 pixels in total, i.e., 2 pixels in the vertical direction and 3 pixels in the horizontal direction, which share the reset transistor, the amplifying transistor, the selection transistor, and the floating diffusion node is referred to as a "2 × 3 shared pixel". In the same manner as in the "2 × 3 shared pixels", the charge generated by the photodiode of each pixel is transferred to the charge-voltage conversion node 46, and the pixel signal of the pixel is output to the readout data line. The output sequence of each pixel signal is controlled by the timing sequence of the method shown in fig. 3, which is not described herein. The sequential portion that outputs a signal for each pixel is specifically limited in the embodiment of the present invention.
Examples N and M of the present invention are not particularly limited. In other embodiments, the pixel may be any combination of N × M pixels sharing a reset transistor, an amplifying transistor, a selection transistor, and a floating diffusion node.
Fig. 5 is a schematic diagram of a detection method according to an embodiment of the present invention, as shown in fig. 5, the method is applied to the apparatus described above, and the method may include:
s101, the selection signal line sends a selection signal to the charge-voltage conversion device, so that the signal reading line reads out a signal in the selected charge-voltage conversion device.
And S102, resetting the selected voltage device by the resetting device.
S103, the signal read line reads out a signal (only a noise signal) in the charge-voltage conversion device.
And S104, resetting the selected voltage device by the resetting device.
And S105, controlling the charge in the corresponding storage device to be transferred to the charge-voltage conversion device by the transfer device.
S106, the signal read line reads out a signal (noise signal + effective signal) in the charge-voltage conversion device.
S107, the signal containing the effective signal and the signal not containing the effective signal are operated, so that the effective signal is removed from the invalid signal.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus and method may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, the division of the units is only one logical division, and other divisions may be realized in practice, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, or in a form of hardware plus a software functional unit.
Claims (13)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010385001.8A CN113630564A (en) | 2020-05-09 | 2020-05-09 | Detection device and detection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010385001.8A CN113630564A (en) | 2020-05-09 | 2020-05-09 | Detection device and detection method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113630564A true CN113630564A (en) | 2021-11-09 |
Family
ID=78377442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010385001.8A Pending CN113630564A (en) | 2020-05-09 | 2020-05-09 | Detection device and detection method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113630564A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009225021A (en) * | 2008-03-14 | 2009-10-01 | Sharp Corp | Solid-state imaging apparatus and electronic information apparatus |
| CN103988494A (en) * | 2011-12-13 | 2014-08-13 | 国立大学法人东北大学 | solid state imaging device |
| CN110537367A (en) * | 2017-04-26 | 2019-12-03 | 索尼半导体解决方案公司 | Solid state image capture device and electronics |
-
2020
- 2020-05-09 CN CN202010385001.8A patent/CN113630564A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009225021A (en) * | 2008-03-14 | 2009-10-01 | Sharp Corp | Solid-state imaging apparatus and electronic information apparatus |
| CN103988494A (en) * | 2011-12-13 | 2014-08-13 | 国立大学法人东北大学 | solid state imaging device |
| CN110537367A (en) * | 2017-04-26 | 2019-12-03 | 索尼半导体解决方案公司 | Solid state image capture device and electronics |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102480603B (en) | Solid state image pickup device, its driving method and electronic installation | |
| US9485447B2 (en) | Reduced size image pickup apparatus retaining image quality | |
| EP2832090B1 (en) | Cmos image sensors implementing full frame digital correlated double sampling with global shutter | |
| US7321329B2 (en) | Analog-to-digital converter and semiconductor device | |
| CN207022104U (en) | Image sensor pixel and imaging system | |
| US6538693B1 (en) | Photoelectric conversion apparatus having reset noise holding and removing units | |
| JP4937380B2 (en) | CMOS image sensor | |
| US6914227B2 (en) | Image sensing apparatus capable of outputting image by converting resolution by adding and reading out a plurality of pixels, its control method, and image sensing system | |
| KR100399954B1 (en) | Comparator performing analog correlated double sample for cmos image sensor | |
| US7268814B1 (en) | Time-delayed-integration imaging with active pixel sensors | |
| US8681253B2 (en) | Imaging system for creating an output signal including data double-sampled from an image sensor | |
| CN103875237A (en) | Image pickup device and camera system | |
| CN107370968B (en) | Image forming apparatus and image forming method thereof | |
| JPH09247536A (en) | Mos type solid-state image pickup device and its drive method | |
| EP0633691B1 (en) | Solid state imager device having a/d converter | |
| CN113630564A (en) | Detection device and detection method | |
| JP4408151B2 (en) | Solid-state imaging device | |
| US20240380997A1 (en) | Image capturing device | |
| US20100177220A1 (en) | Image sensor for reducing kick-back noise and image pick-up device having the same | |
| JPS6361560A (en) | Driving circuit of image sensor | |
| CN118803450B (en) | Image sampling system and medical grade image sensor | |
| JP5153563B2 (en) | Solid-state imaging device and driving method thereof | |
| CN116582764A (en) | Image sensor and reading method | |
| WO2010113722A1 (en) | Solid-state image pickup device | |
| JP2001024181A (en) | Solid-state image pick-up device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20211109 |
|
| RJ01 | Rejection of invention patent application after publication |