CN113629002A - Base support device of epitaxial film growth equipment and use method thereof - Google Patents
Base support device of epitaxial film growth equipment and use method thereof Download PDFInfo
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- CN113629002A CN113629002A CN202110950730.8A CN202110950730A CN113629002A CN 113629002 A CN113629002 A CN 113629002A CN 202110950730 A CN202110950730 A CN 202110950730A CN 113629002 A CN113629002 A CN 113629002A
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- 238000000034 method Methods 0.000 title abstract description 14
- 239000010453 quartz Substances 0.000 abstract description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 22
- 230000007246 mechanism Effects 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 description 10
- 238000003780 insertion Methods 0.000 description 9
- 230000037431 insertion Effects 0.000 description 9
- 238000003825 pressing Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XBWAZCLHZCFCGK-UHFFFAOYSA-N 7-chloro-1-methyl-5-phenyl-3,4-dihydro-2h-1,4-benzodiazepin-1-ium;chloride Chemical compound [Cl-].C12=CC(Cl)=CC=C2[NH+](C)CCN=C1C1=CC=CC=C1 XBWAZCLHZCFCGK-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
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- 230000000694 effects Effects 0.000 description 1
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- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a base support device of epitaxial film growth equipment and a use method thereof, and the base support device comprises an epitaxial film growth machine body, wherein a lower quartz bell jar is installed inside the epitaxial film growth machine body, an upper quartz disc is horizontally arranged at the top of the epitaxial film growth machine body, two groups of tightening mechanisms are symmetrically arranged between the epitaxial film growth machine body and the upper quartz disc, a processing inner cavity is formed between the upper quartz disc and the lower quartz bell jar, a base support mechanism is arranged inside the processing inner cavity, the base support mechanism comprises a rotating motor installed at the bottom of the epitaxial film growth machine body and a base support frame installed at the power output end of the rotating motor, the base support frame consists of support rods and support arms, and the support arms are provided with three groups and are uniformly processed and formed at the tops of the support rods. The invention improves the shape of the head of the supporting arm, and omits three supporting pins, so that the arm of the supporting frame is directly connected with the base, thereby saving materials, saving cost, improving the fixing performance between the arm and the base and improving the yield of products.
Description
Technical Field
The invention relates to the technical field of epitaxial film growth equipment, in particular to a base support device of epitaxial film growth equipment and a using method thereof.
Background
Epitaxial growth techniques were developed in the late 50 s and early 60 s. At that time, in order to manufacture a high-frequency high-power device, the series resistance of the collector needs to be reduced, and the material is required to be resistant to high voltage and large current, so that a thin high-resistance epitaxial layer needs to be grown on a low-resistance substrate, and then epitaxial equipment is produced. When a problem occurs in a process parameter of an epitaxial apparatus, generally, the process gas flow, the process temperature, the horizontal stability of the susceptor, and the like are discussed, and adjustment of the process gas flow and the process temperature only needs to be changed on an operation interface.
However, the conventional susceptor supporting apparatus for an epitaxial film growth apparatus has the following problems in use: because the base is fixed on the support frame only through three supporting legs, and the supporting legs are similar to grenade-shaped structure, at the rotatory in-process of base, the supporting legs can be because long-time and the supporting hole friction produces and rocks, and then causes the rotatory unstability of base, has further influenced the film thickness of above-mentioned wafer and the homogeneity of its resistance, has reduced the product yield. For this reason, a corresponding technical scheme needs to be designed to solve the existing technical problems.
Disclosure of Invention
The invention aims to provide a base supporting device of epitaxial film growth equipment and a using method thereof, which solve the technical problems that the base is only fixed on a supporting frame through three supporting legs, and the supporting legs are similar to a grenade-shaped structure, and the supporting legs can shake due to long-time friction with supporting holes in the rotation process of the base, so that the rotation of the base is unstable, the film thickness of an upper wafer and the uniformity of the resistance of the upper wafer are further influenced, and the product yield is reduced.
In order to achieve the purpose, the invention provides the following technical scheme: a base supporting device of epitaxial film growth equipment comprises an epitaxial film growth machine body, wherein a lower quartz bell jar is arranged inside the epitaxial film growth machine body, an upper quartz disc is horizontally arranged at the top of the epitaxial film growth machine body, two groups of tightening mechanisms are symmetrically arranged between the epitaxial film growth machine body and the upper quartz disc, a processing inner cavity is formed between the upper quartz disc and the lower quartz bell jar, a base supporting mechanism is arranged inside the processing inner cavity and comprises a rotating motor and a base supporting frame, the rotating motor is arranged at the bottom of the epitaxial film growth machine body, the base supporting frame is arranged at the power output end of the rotating motor and consists of a supporting rod and supporting arms, the supporting arms are respectively provided with three groups of supporting arms which are uniformly processed and formed at the tops of the supporting rods, a dividing notch is formed in the head of the supporting arms, and a supporting rod and an inserting rod are respectively formed on two sides of the dividing notch, the top of the base support frame is also horizontally provided with a base body, three groups of support holes matched with the insertion rods are uniformly formed in the periphery of the base body, the upper ends of the insertion rods are inserted in the support holes, and the upper ends of the support rods are in contact with the back surface of the base body.
As a preferred embodiment of the present invention, the clamping mechanism is provided with an upper metal clamping ring, a substrate and a lower metal clamping ring from top to bottom in sequence, the upper metal clamping ring is connected with the upper quartz circular disc, and the lower metal clamping ring is connected with the lower quartz bell jar.
In a preferred embodiment of the present invention, an air inlet duct is connected to the left-side base plate, an air outlet duct is connected to the right-side base plate, and a pneumatic valve is mounted on the air outlet duct.
As a preferred embodiment of the present invention, the supporting arm has a two-section structure and includes a diagonal rod connected to the supporting rod and a vertical rod integrally formed at an upper end of the diagonal rod, and the separation notch is opened at a top of the vertical rod.
In a preferred embodiment of the invention, the horizontal distance between the support rod and the end of the vertical rod is 3.817 cm.
In a preferred embodiment of the present invention, the top of the support rod is a horizontal structure, the upper end of the insertion rod is an arc structure, and the height of the insertion rod is greater than the height of the support rod by a height difference of 0.96 cm.
As a preferred embodiment of the present invention, a receiving notch is formed in an outer side of the insertion rod, an arc-shaped pressure plate is disposed in the receiving notch, a lower end of the arc-shaped pressure plate is rotatably connected to an inner wall of the receiving notch, a hook is formed at an upper end of the arc-shaped pressure plate, and a reset gasket is disposed between a back surface of the arc-shaped pressure plate and the receiving notch.
As a preferred embodiment of the invention, firstly, a base support frame is arranged on a power output end of a rotating motor and fixed in position, a base body is placed on the support frame, a head part on a support hand is butted and inserted into and fixed with a support hole of the base, a worker presses a cambered surface pressing plate into a containing notch and correspondingly inserts an insertion rod into the support hole, then the pressing is given up under the elastic force of a reset gasket to enable a hook to be outwards sprung and to be abutted against the inner wall of the support hole, finally, a wafer is placed at the center position of the base body (11), a rotary switch is opened, and the rotation condition of the base is observed.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention designs a base supporting device special for supporting epitaxial film production, which is characterized in that the upper end structure of a base supporting arm is changed, the shape of the supporting arm is optimized, the compression resistance degree of the supporting arm can be improved, the head shape of the supporting arm is improved, three supporting pins are abandoned, the supporting arm is directly connected with a base, materials and cost are saved, the fixing performance between the arm and the base is improved, and the product yield is further improved.
2. The head of the supporting arm is designed into a conical structure, and meanwhile, the damage to the bottom of the base can be reduced by designing the head into a cambered surface structure when the head is contacted with the base, so that the practical safety of the supporting arm is improved.
Drawings
FIG. 1 is an overall block diagram of the present invention;
FIG. 2 is a side view of the base support of the present invention;
FIG. 3 is a top view of the base support of the present invention;
FIG. 4 is a view of the support arm configuration of the present invention;
FIG. 5 is a view showing a structure of a part B of the present invention.
In the figure, 1, an epitaxial film growth body; 2. a lower quartz bell jar; 3. an upper quartz disc; 4. processing an inner cavity; 5. a rotating electric machine; 6. a support bar; 7. supporting the arm; 8. dividing the notch; 9. a support rod; 10. inserting a rod; 11. a base body; 12. a support hole; 13. an upper metal clamping ring; 14. a substrate; 15. a lower metal clamping ring; 16. an air intake duct; 17. an exhaust duct; 18. a pneumatic valve; 19. a diagonal bar; 20. erecting a rod; 21. a receiving slot; 22. a cambered surface pressing plate; 23. hooking; 24. and resetting the gasket.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-5, the present invention provides a technical solution: a base supporting device of epitaxial film growth equipment comprises an epitaxial film growth machine body 1, a lower quartz bell jar 2 is installed inside the epitaxial film growth machine body 1, the top of the epitaxial film growth machine body 1 is horizontally provided with an upper quartz disc 3, two groups of tightening mechanisms are symmetrically arranged between the epitaxial film growth machine body 1 and the upper quartz disc 3, a processing inner cavity 4 is formed between the upper quartz disc 3 and the lower quartz bell jar 2, a base supporting mechanism is arranged inside the processing inner cavity 4, the base supporting mechanism comprises a rotating motor 5 installed at the bottom of the epitaxial film growth machine body 1 and a base supporting frame installed at the power output end of the rotating motor 5, the base supporting frame is composed of supporting rods 6 and supporting arms 7, the supporting arms 7 are respectively provided with three groups and are uniformly processed and formed at the top of the supporting rods 6, the head of the supporting arms 7 is processed and formed with dividing notches 8, and two sides of the dividing notches 8 are respectively provided with a supporting rod 9 and an inserting rod 10, the top of the base support frame is also horizontally provided with a base body 11, three groups of support holes 12 matched with the insertion rods 10 are uniformly formed in the periphery of the base body 11, the upper ends of the insertion rods 10 are inserted into the support holes, the upper ends of the support rods 9 are in contact with the back of the base body 11, the device is characterized in that the upper end structure of the support arm 7 of the base body 11 is changed, the shape of the support arm 7 is optimized, the compression resistance degree of the support arm 7 can be improved, the head shape of the support arm 7 is improved, three support pins are abandoned, the support arm 7 is directly connected with the base body 11, materials are saved, the cost is saved, the fixing performance between the arm and the base is improved, and the product yield is improved.
Further improved, as shown in fig. 1: the clamping mechanism is sequentially provided with an upper metal clamping ring 13, a substrate 14 and a lower metal clamping ring 15 from top to bottom, the upper metal clamping ring 13 is connected with the upper quartz disc 3, and the lower metal clamping ring 15 is connected with the lower quartz bell jar 2, so that the tightness of the connection of the epitaxial film growth machine body 1 and the upper quartz disc 3 can be improved.
Further improved, as shown in fig. 1: an air inlet pipeline 16 is connected to the substrate 14 on the left side, an air outlet pipeline 17 is connected to the substrate 14 on the right side, and a pneumatic valve 18 is mounted on the air outlet pipeline 17, so that H is facilitated2Introduction of (d) and exhaust gas discharge.
Further improved, as shown in fig. 4: support arm 7 is two segmentation structures and includes down tube 19 that is connected with bracing piece 6 and integrated into one piece in the pole setting 20 of 19 upper ends of down tube, separates the notch and sets up in the top of pole setting 20, and such design can improve the stability of base body 11 installation, and the in-process that base body 11 pushed down supports arm 7 and expands outward and improve the tautness with supporting hole 12 contact.
Further improved, as shown in fig. 5: the horizontal distance from the support rod 6 to the end part of the upright rod 20 is 3.817cm, so that the support effect is improved.
Further improved, as shown in fig. 5: the top of die-pin 9 is horizontal column structure, and the upper end of inserted bar 10 is the arc structure, and the height that highly is greater than die-pin 9 of inserted bar 10 and the difference in height is 0.96cm, and such design mode can guarantee that the die-pin 9 supports the back of base body 11 when inserted bar 10 inserts supporting hole 12.
Specifically, the accommodating notch 21 is opened in the outside of the inserted bar 10, an arc pressing plate 22 is arranged in the accommodating notch 21, the lower end of the arc pressing plate 22 is rotatably connected with the inner wall of the accommodating notch 21, a hook 23 is formed on the upper end of the arc pressing plate 22 in a machining mode, a reset gasket 24 is arranged between the back face and the accommodating notch 21, and the reset gasket 24 is made of elastic metal materials and has a corrugated structure on the surface.
When in use: the invention installs a base support frame on the power output end of a rotating motor 5, fixes the position, places a base body 11 on the support frame, inserts and fixes the head on a support arm 7 and the support hole 12 of the base, and a worker presses a cambered surface press plate 22 into a containing notch 21 and correspondingly inserts an insertion rod 10 into the support hole 12, and then gives up pressing to make a hook 23 bounce outside and contact with the inner wall of the support hole 12 under the elastic action of a reset gasket 24, thereby achieving the purpose of strengthening and preventing falling, then places a wafer at the central position of the base body 11, opens a rotary switch, and observes the rotation condition of the base.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. The utility model provides a base strutting arrangement of epitaxial film growth equipment, includes epitaxial film growth organism (1), its characterized in that: the epitaxial film growth machine body is characterized in that a lower quartz bell jar (2) is arranged inside the epitaxial film growth machine body (1), an upper quartz disc (3) is horizontally arranged at the top of the epitaxial film growth machine body, two groups of tightening mechanisms are symmetrically arranged between the epitaxial film growth machine body (1) and the upper quartz disc (3), a processing inner cavity (4) is formed between the upper quartz disc (3) and the lower quartz bell jar (2), a base supporting mechanism is arranged inside the processing inner cavity (4), the base supporting mechanism comprises a rotating motor (5) arranged at the bottom of the epitaxial film growth machine body (1) and a base supporting frame arranged at the power output end of the rotating motor (5), the base supporting frame consists of a supporting rod (6) and a supporting arm (7), the supporting arm (7) is provided with three groups and is uniformly processed and formed at the top of the supporting rod (6), and a dividing notch (8) is processed and formed at the head of the supporting arm (7), the utility model discloses a support structure for a motor vehicle seat, including cut apart notch (8), the top of base support frame is provided with base body (11), the both sides of cutting apart notch (8) are formed with die-pin (9) and inserted bar (10) respectively, the top of base support frame still the level is provided with base body (11), the supporting hole (12) that three groups cooperation inserted bar (10) used are evenly seted up to the periphery of base body (11), the upper end interlude of inserted bar (10) is in interior, the upper end of die-pin (9) contacts with the back of base body (11).
2. The susceptor support apparatus of an epitaxial film growth apparatus according to claim 1, wherein: the clamping mechanism is sequentially provided with an upper metal clamping ring (13), a substrate (14) and a lower metal clamping ring (15) from top to bottom, the upper metal clamping ring (13) is connected with the upper quartz disc (3), and the lower metal clamping ring (15) is connected with the lower quartz bell jar (2).
3. The susceptor support apparatus of an epitaxial film growth apparatus according to claim 2, wherein: the air inlet pipeline (16) is connected to the base plate (14) on the left side, the exhaust pipeline (17) is connected to the base plate (14) on the right side, and the pneumatic valve (18) is installed on the exhaust pipeline (17).
4. The susceptor support apparatus of an epitaxial film growth apparatus according to claim 1, wherein: the supporting arm (7) is of a two-section structure and comprises an inclined rod (19) connected with the supporting rod (6) and a vertical rod (20) integrally formed at the upper end of the inclined rod (19), and the separation notch is formed in the top of the vertical rod (20).
5. The susceptor support apparatus of an epitaxial film growth apparatus according to claim 4, wherein: the horizontal distance from the support rod (6) to the end part of the upright rod (20) is 3.817 cm.
6. The susceptor support apparatus of an epitaxial film growth apparatus according to claim 1, wherein: the top of die-pin (9) is the horizontal column structure, the upper end of inserted bar (10) is the arc structure, the height and the difference in height that highly are greater than die-pin (9) of inserted bar (10) are 0.96 cm.
7. The susceptor support apparatus of an epitaxial film growth apparatus according to claim 6, wherein: storage notch (21) have been seted up in the outside of inserted bar (10), it has cambered surface clamp plate (22) to accomodate notch (21) built-in, the lower extreme of cambered surface clamp plate (22) rotates with the inner wall of accomodating notch (21) to be connected, the upper end machine-shaping of cambered surface clamp plate (22) has couple (23) and the back and is provided with between accomodating notch (21) and resets gasket (24).
8. The use method of a susceptor support apparatus for an epitaxial film growth apparatus according to claims 1 to 7, wherein: the specific use method is as follows:
firstly, a base support frame is arranged on a power output end of a rotating motor (5) and is fixed in position, a base body (11) is placed on the support frame, the head of a support arm (7) is butted with a support hole (12) of the base and is inserted and fixed, a worker presses an arc-shaped pressing plate (22) into a containing notch (21) and correspondingly inserts an insertion rod (10) into the support hole (12), then pressure is given up to be exerted under the action of the elastic force of a reset gasket (24), a hook (23) is outwards sprung and is abutted against the inner wall of the support hole (12), finally a wafer is placed in the center of the base body (11), a rotary switch is opened, and the rotation condition of the base is observed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110950730.8A CN113629002A (en) | 2021-08-18 | 2021-08-18 | Base support device of epitaxial film growth equipment and use method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110950730.8A CN113629002A (en) | 2021-08-18 | 2021-08-18 | Base support device of epitaxial film growth equipment and use method thereof |
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| CN113629002A true CN113629002A (en) | 2021-11-09 |
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| CN202110950730.8A Pending CN113629002A (en) | 2021-08-18 | 2021-08-18 | Base support device of epitaxial film growth equipment and use method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116411262A (en) * | 2021-12-31 | 2023-07-11 | 中微半导体设备(上海)股份有限公司 | Support assembly, epitaxial deposition reactor and assembly method thereof |
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| JP2015213117A (en) * | 2014-05-02 | 2015-11-26 | 信越半導体株式会社 | Epitaxial growth system |
| CN107851561A (en) * | 2015-04-27 | 2018-03-27 | 胜高股份有限公司 | Pedestal and epitaxial growth device |
| CN112967958A (en) * | 2021-04-02 | 2021-06-15 | 盛吉盛(宁波)半导体科技有限公司 | Epitaxial film growth equipment and separation method |
| CN215578490U (en) * | 2021-08-18 | 2022-01-18 | 盛吉盛(宁波)半导体科技有限公司 | Base supporting device of epitaxial film growth equipment |
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2021
- 2021-08-18 CN CN202110950730.8A patent/CN113629002A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015213117A (en) * | 2014-05-02 | 2015-11-26 | 信越半導体株式会社 | Epitaxial growth system |
| CN107851561A (en) * | 2015-04-27 | 2018-03-27 | 胜高股份有限公司 | Pedestal and epitaxial growth device |
| CN112967958A (en) * | 2021-04-02 | 2021-06-15 | 盛吉盛(宁波)半导体科技有限公司 | Epitaxial film growth equipment and separation method |
| CN215578490U (en) * | 2021-08-18 | 2022-01-18 | 盛吉盛(宁波)半导体科技有限公司 | Base supporting device of epitaxial film growth equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116411262A (en) * | 2021-12-31 | 2023-07-11 | 中微半导体设备(上海)股份有限公司 | Support assembly, epitaxial deposition reactor and assembly method thereof |
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