CN113594243A - Gradient polarization doped enhanced GaN longitudinal field effect transistor - Google Patents
Gradient polarization doped enhanced GaN longitudinal field effect transistor Download PDFInfo
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- 230000010287 polarization Effects 0.000 title claims abstract description 43
- 230000005669 field effect Effects 0.000 title claims abstract description 21
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000004047 hole gas Substances 0.000 claims abstract description 4
- 239000004020 conductor Substances 0.000 claims description 33
- 230000004888 barrier function Effects 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910002704 AlGaN Inorganic materials 0.000 claims description 5
- 230000005684 electric field Effects 0.000 abstract description 8
- 230000015556 catabolic process Effects 0.000 description 6
- 230000004913 activation Effects 0.000 description 4
- 230000000779 depleting effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
- H10D30/477—Vertical HEMTs or vertical HHMTs
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
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Abstract
本发明属于功率半导体技术领域，具体涉及一种渐变极化掺杂的增强型GaN纵向场效应晶体管。本发明主要特征在于：通过引入Al组分渐变的极化掺杂层产生极化电场，形成高浓度三维空穴气(3DHG)，突破难以实现高浓度P型GaN的瓶颈，高浓度3DHG能有效阻断栅极侧壁沟道，实现器件增强型。同时，可以辅助耗尽漂移区，提高器件耐压。
The invention belongs to the technical field of power semiconductors, and in particular relates to a gradient polarization doped enhancement mode GaN vertical field effect transistor. The main feature of the invention is that: a polarization electric field is generated by introducing a polarization doping layer with a graded Al composition to form a high-concentration three-dimensional hole gas (3DHG), which breaks through the bottleneck that high-concentration P-type GaN is difficult to achieve, and high-concentration 3DHG can effectively The gate sidewall channel is blocked to realize the device enhancement mode. At the same time, it can assist to deplete the drift region and improve the withstand voltage of the device.
Description
Technical Field
The invention belongs to the technical field of power semiconductors, and particularly relates to a gradient polarization doped enhanced GaN longitudinal field effect transistor.
Background
The GaN-based device has the excellent performances of large critical breakdown electric field, high electron mobility, high saturation speed, high temperature resistance and the like, and is an ideal choice for power electronic devices. The Breakdown Voltage (BV) of the lateral GaN transistor is proportional to the gate-drain spacing, thus requiring a larger device area to achieve high voltage resistance; BV also depends on the thickness and quality of the buffer layer, which adds to the overall complexity and cost of epitaxial growth of high voltage devices. In addition, lateral devices are also severely affected by surface traps and high electric fields, leading to current collapse and other reliability problems. In contrast, the breakdown voltage of the vertical GaN transistor depends on the thickness of the drift layer and is independent of the area of the device, so that on one hand, the area of the chip is effectively reduced, and the cost of the chip is reduced; on the other hand, the electric field peak value is far away from the surface of the device, so that the breakdown voltage and the reliability of the device are effectively improved. The GaN longitudinal field effect transistor with the P-type doped GaN layer for blocking the channel is easy to realize enhancement, and a PN junction formed by the P-type doped GaN layer and the N-type GaN drift region is used for assisting in depleting the drift region during voltage resistance, so that the device has higher breakdown voltage and is suitable for high-voltage application. However, Mg is an acceptor impurity of GaN material with the lowest activation energy, the activation energy is about 200meV, which is much higher than the thermoelectric potential (about 26meV) at room temperature, and the activation energy of P-type impurity at room temperature is only about 1% due to the excessively high activation energy of the impurity. Therefore, how to obtain a high-hole-concentration and high-quality P-type GaN layer becomes one of the problems to be solved in the design and preparation of the vertical GaN transistor.
Disclosure of Invention
In order to solve the above problems, the present invention provides a gradually polarization doped enhancement type GaN vertical field effect transistor. A polarization electric field is generated by introducing a polarization doping layer with gradually changed Al components to form high-concentration three-dimensional hole gas (3DHG), and the bottleneck that high-concentration P-type GaN is difficult to realize is broken through. The high-concentration 3DHG can effectively block the side wall channel of the grid electrode, and the enhancement of the device is realized. Meanwhile, the depletion of the drift region can be assisted, and the withstand voltage of the device is improved.
The technical scheme of the invention is as follows:
a gradient polarization doped enhancement type GaN longitudinal field effect transistor comprises a first conductive material 1, an N-type GaN high-doping region 2, an N-type GaN drift region 3, a gradient polarization doping layer 4, a source semiconductor layer 5 and a passivation layer 7 which are sequentially stacked from bottom to top along the vertical direction of a device; the left end and the right end of the surface of the device are respectively provided with a second conductive material 6 and an insulated gate structure, and a space is reserved between the second conductive material 6 and the insulated gate structure;
the contact between the first conductive material 1 and the N-type GaN high-doping area 2 is ohmic contact; a drain electrode is led out from the lower surface of the first conductive material 1;
the second conductive material 6 extends downwards along the vertical direction, penetrates through the passivation layer 7 and is in contact with the source electrode semiconductor layer 5, and a source electrode is led out from the upper surface of the second conductive material 6; the contact between the second conductive material 6 and the source semiconductor layer 5 is ohmic contact;
the insulated gate structure extends downwards along the vertical direction, sequentially penetrates through the passivation layer 7, the source semiconductor layer 5 and the gradient polarization doping layer 4 and extends into the N-type GaN drift region 3, the insulated gate structure is composed of an insulated gate dielectric 8 and a third conductive material 9, and the side wall and the bottom of the third conductive material 9 are surrounded by the insulated gate dielectric 8; a grid is led out of the upper surface of the third conductive material 9;
it is characterized in that the gradient polarization doping layer 4 is made of Al with the gradually-changed Al component concentrationxGa1-xN, forming a three-dimensional hole gas (3DHG), or a three-dimensional electron gas (3DEG) and 3 DHG;
the invention provides a gradient polarization doped enhancement type GaN longitudinal field effect transistor, which is characterized in that a polarization electric field generated by a polarization doped layer with a gradient Al component is introduced to induce and generate high-concentration 3DHG, so that a gate side wall channel is blocked, and the enhancement of a device is realized; and during voltage resistance, the high-concentration 3DHG assists in depleting the drift region, so that the voltage resistance of the device is improved.
Furthermore, in the gradient polarization doping layer (4), the Al molar composition is from top to bottom from x0Gradually increase to x1Wherein 0 is less than or equal to x0<x1≤1。
Furthermore, in the gradient polarization doping layer (4), the Al molar composition is from top to bottom from x0Gradually increase to x1Then from x1Gradually decrease to x2Wherein 0 is less than or equal to x0<x1≤1，0≤x2<x1≤1。
Further, the source electrode semiconductor layer (5) is made of an N-type highly-doped semiconductor material; the used material is one or the combination of several of GaN, AlN, AlGaN, InGaN and InAlN.
Further, the source electrode semiconductor layer (5) is AlxGa1-xN gradient polarization doping layer, Al mole component from top to bottom from x4Gradually decrease to x3Wherein 0 is less than or equal to x3<x4≤1。
Further, the source semiconductor layer (5) is composed of a channel layer (52) and a barrier layer (51), and the channel layer (52) and the barrier layer (51) form a heterojunction; the channel layer (52) and the barrier layer (51) are made of one or a combination of more of GaN, AlN, AlGaN, InGaN and InAlN
Compared with the traditional GaN longitudinal field effect transistor, the GaN longitudinal field effect transistor has the beneficial effects that the polarization doping layer with gradually changed Al components is introduced to generate a polarization electric field, so that high-concentration 3DHG is formed. The problems that the carrier low-temperature freezeout effect is caused when the P-type GaN layer is formed by Mg doping, the polarity of the GaN material is reversed due to excessive Mg doping, and the hole concentration is reduced rapidly are solved. The high concentration of 3DHG results in a device with a higher threshold voltage and breakdown voltage.
Drawings
FIG. 1 is a schematic structural view of example 1;
FIG. 2 is a schematic structural view of example 2;
FIG. 3 is a schematic structural view of embodiment 3;
FIG. 4 is a schematic structural view of example 4;
FIG. 5 is a schematic diagram of Al composition change of a graded polarization doped layer in example 4;
Detailed Description
The technical scheme of the invention is described in detail in the following with reference to the accompanying drawings and embodiments:
example 1
As shown in fig. 1, the enhancement GaN vertical field effect transistor with graded polarization doping of this example includes a first conductive material 1, an N-type GaN highly doped region 2, an N-type GaN drift region 3, a graded polarization doping layer 4, a source semiconductor layer 5 and a passivation layer 7 sequentially stacked from bottom to top along the vertical direction of the device; the left end and the right end of the surface of the device are respectively provided with a second conductive material 6 and an insulated gate structure, and a space is reserved between the second conductive material 6 and the insulated gate structure;
the contact between the first conductive material 1 and the N-type GaN high-doping area 2 is ohmic contact; a drain electrode is led out from the lower surface of the first conductive material 1;
the second conductive material 6 extends downwards along the vertical direction, penetrates through the passivation layer 7 and is in contact with the source electrode semiconductor layer 5, and a source electrode is led out from the upper surface of the second conductive material 6; the contact between the second conductive material 6 and the source semiconductor layer 5 is ohmic contact;
the insulated gate structure extends downwards along the vertical direction, sequentially penetrates through the passivation layer 7, the source semiconductor layer 5 and the gradient polarization doping layer 4 and extends into the N-type GaN drift region 3, the insulated gate structure is composed of an insulated gate dielectric 8 and a third conductive material 9, and the side wall and the bottom of the third conductive material 9 are surrounded by the insulated gate dielectric 8; a grid is led out of the upper surface of the third conductive material 9;
the source electrode semiconductor layer 5 is made of an N-type highly-doped GaN material;
it is characterized in that the material adopted by the gradient polarization doping layer 4 is AlxGa1-xThe molar composition of N and Al is from top to bottom from x0Gradually increase to x1(0≤x0<x1Less than or equal to 1) to form 3 DHG;
according to the gradient polarization doped enhancement type GaN longitudinal field effect transistor, high-concentration 3DHG is induced and generated by a polarization electric field generated by the gradient polarization doped layer with the gradually increased Al component from top to bottom. Blocking a gate side wall channel by high-concentration 3DHG to realize enhancement of the device; and during voltage resistance, the high-concentration 3DHG assists in depleting the drift region, so that the voltage resistance of the device is improved.
Example 2
The difference between this example and example 1 is that the source semiconductor layer 5 of the enhancement mode GaN vertical field effect transistor of the graded polarization doping in this example is composed of a channel layer 52 and a barrier layer 51, and the channel layer 52 and the barrier layer 51 form a heterojunction; the channel layer 52 and the barrier layer 51 are made of GaN and AlGaN, respectively. Compared with embodiment 1, this example has an advantage that the source semiconductor layer forms a conductive channel of the source region through the 2DEG, and can reduce the forward on-resistance of the device.
Example 3
The difference between this example and example 1 is that the source semiconductor layer 5 of the enhancement mode GaN vertical field effect transistor with graded polarization doping in this example is a graded polarization doping layer, and the molar composition of Al is from top to bottom from x4Gradually decrease to x3(0≤x3<x41) or less to form 3 DEG. The advantage of this example is that the forward on-resistance of the device can be further reduced compared to embodiment 1.
Example 4
The difference between this example and example 1 is that in the graded polarization doped layer 4 of the enhanced GaN vertical field effect transistor with graded polarization doping in this example, the molar composition of Al is from top to bottom from x0Gradually increase to x1(0≤x0<x1Less than or equal to 1) to form 3 DHG; then from x1Gradually decrease to x2(0≤x2<x11) or less to form 3 DEG. Compared with embodiment 1, this example has an advantage that the 3DEG formed at the bottom of the graded polarization doped layer 4 can be used as a drift region current diffusion layer, further reducing the forward on-resistance of the device.
Claims (6)
1. A gradient polarization doped enhancement type GaN longitudinal field effect transistor comprises a first conductive material (1), an N-type GaN high-doping region (2), an N-type GaN drift region (3), a gradient polarization doping layer (4), a source semiconductor layer (5) and a passivation layer (7) which are sequentially stacked from bottom to top along the vertical direction of a device; the left end and the right end of the surface of the device are respectively provided with a second conductive material (6) and an insulated gate structure, and a space is reserved between the second conductive material (6) and the insulated gate structure;
the contact between the first conductive material (1) and the N-type GaN high-doping area (2) is ohmic contact; a drain electrode is led out from the lower surface of the first conductive material (1);
the second conductive material (6) extends downwards along the vertical direction, penetrates through the passivation layer (7) and is in contact with the source electrode semiconductor layer (5), and a source electrode is led out from the upper surface of the second conductive material (6); the contact between the second conductive material (6) and the source electrode semiconductor layer (5) is ohmic contact;
the insulated gate structure extends downwards along the vertical direction, sequentially penetrates through the passivation layer (7), the source electrode semiconductor layer (5) and the gradient polarization doping layer (4) and extends into the N-type GaN drift region (3), the insulated gate structure is composed of an insulated gate dielectric (8) and a third conductive material (9), and the side wall and the bottom of the third conductive material (9) are surrounded by the insulated gate dielectric (8); a grid is led out of the upper surface of the third conductive material (9);
characterized in that the gradient polarization doping layer (4) is made of Al with the gradient Al component concentrationxGa1-xN, forming a three-dimensional hole gas (3DHG), or a three-dimensional electron gas (3DEG) and 3 DHG.
2. The gradually polarization-doped enhancement mode GaN vertical field effect transistor according to claim 1, wherein in the gradually polarization-doped layer (4), the molar composition of Al is from top to bottom and x is from top to bottom0Gradually increase to x1Wherein 0 is less than or equal to x0<x1≤1。
3. The gradually polarization-doped enhancement mode GaN vertical field effect transistor according to claim 1, wherein in the gradually polarization-doped layer (4), the molar composition of Al is from top to bottom and x is from top to bottom0Gradually increase to x1Then from x1Gradually decrease to x2Wherein 0 is less than or equal to x0<x1≤1，0≤x2<x1≤1。
4. A graded polarization doped enhancement mode GaN vertical field effect transistor according to any of claims 1-3, characterized in that the source semiconductor layer (5) is a highly N-type doped semiconductor material; the used material is one or the combination of several of GaN, AlN, AlGaN, InGaN and InAlN.
5. A graded polarization doped enhancement mode GaN vertical field effect transistor according to any of claims 1-3 characterized in that the source semiconductor layer (5) is AlxGa1-xN gradient polarization doping layer, Al mole component from top to bottom from x4Gradually decrease to x3Wherein 0 is less than or equal to x3<x4≤1。
6. A graded polarization doped enhancement mode GaN longitudinal field effect transistor according to any of claims 1-3, characterized in that the source semiconductor layer (5) is composed of a channel layer (52) and a barrier layer (51), and the channel layer (52) and the barrier layer (51) form a heterojunction; the channel layer (52) and the barrier layer (51) are made of one or a combination of more of GaN, AlN, AlGaN, InGaN and InAlN.
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Application publication date: 20211102 |