CN113580557A - 3D printing method for replacing NCF in TSV process - Google Patents
3D printing method for replacing NCF in TSV process Download PDFInfo
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- CN113580557A CN113580557A CN202110856536.3A CN202110856536A CN113580557A CN 113580557 A CN113580557 A CN 113580557A CN 202110856536 A CN202110856536 A CN 202110856536A CN 113580557 A CN113580557 A CN 113580557A
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- Prior art keywords
- wafer
- printing
- ncf
- printer
- replacing
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 230000008569 process Effects 0.000 title claims abstract description 26
- 238000010146 3D printing Methods 0.000 title claims abstract description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- 239000010949 copper Substances 0.000 claims abstract description 26
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000084 colloidal system Substances 0.000 claims abstract description 16
- 238000007639 printing Methods 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 6
- 230000009471 action Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 7
- 239000010703 silicon Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000002508 contact lithography Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000001723 curing Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
- B29C64/112—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using individual droplets, e.g. from jetting heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1052—Formation of thin functional dielectric layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
Abstract
The invention discloses a 3D printing method for replacing NCF in TSV process, and particularly relates to the technical field of through silicon via process, which comprises the following steps: s1: an operator places the wafer with the iron ring on the workbench and positions the direction of the wafer through the gap of the iron ring; s2: an operator inputs the coordinates of the wafer copper cylinder into the 3D printing software, and the 3D printing software transmits the coordinate data to the 3D printer; s3: the 3D printer passes through camera lens location wafer, with colloid spraying to wafer surface and keep away the copper post region through the copper post coordinate. In the 3D printing technology provided by the embodiment of the invention, the 3D printer can avoid the copper column area in the printing process by inputting the wafer copper column coordinates to finish 3D printing of the bonding layer, so that compared with the existing NCF (non-contact printing) process, the material utilization rate is improved, and the material cost is reduced; and the technical blockage of the NCF process is avoided, so that the technology can be applied to large-scale mass production.
Description
Technical Field
The invention relates to the technical field of Through Silicon Via (TSV) processes, in particular to a 3D printing method for replacing NCF in a TSV process.
Background
Through Silicon Via (TSV) technology is a new technical solution for realizing interconnection of stacked chips in a three-dimensional integrated circuit, and vertical electrical interconnection of upper and lower chips is realized by filling conductive substances such as copper, tungsten, polysilicon and the like.
The 3D printing technology is a latest rapid prototyping device using technologies such as photocuring and paper lamination. The printer produces a solid body by reading the information of the cross-section in the document, printing the sections layer by layer with a liquid, powder or sheet material, and bonding the sections in various ways.
Wafer (Wafer) refers to the silicon chip used in the fabrication of silicon semiconductor integrated circuits. At the back stage of the through silicon via packaging process, the wafer is attached to the cutting film, and then the wafer is fixed by using an iron ring.
Before a Through Silicon Via (TSV) process is bonded with a wafer, a connecting layer needs to be covered on the surface of the wafer to achieve the purpose of fixing the wafer, and meanwhile, the wafer and the wafer are vertically and electrically interconnected through copper columns, and the connecting layer needs to avoid the copper column area.
One current solution is to use NCF film attached to the wafer surface, which exposes the copper pillar regions at high temperature, to achieve vertical electrical interconnection of the wafer. The NCF process has the advantages that: the operation is simple, and the efficiency is high; the disadvantages are that: NCF films are costly and affected by intellectual property rights and cannot be applied to large-scale mass production.
Therefore, it is desirable to provide a 3D printing method in place of NCF in TSV process.
Disclosure of Invention
In order to overcome the above defects in the prior art, embodiments of the present invention provide a 3D printing method for replacing NCF in TSV technology, so as to solve the problem that the NCF film in the 3D printing technology in the prior art has high cost and cannot be applied to large-scale mass production.
In order to solve the technical problems, the invention provides the following technical scheme: A3D printing method for replacing NCF in TSV process comprises the following steps:
s1: an operator places the wafer with the iron ring on the workbench and positions the direction of the wafer through the gap of the iron ring;
s2: an operator inputs the coordinates of the wafer copper cylinder into the 3D printing software, and the 3D printing software transmits the coordinate data to the 3D printer;
s3: the 3D printer positions the wafer through the lens, sprays the colloid on the surface of the wafer and avoids the copper cylinder area through the copper cylinder coordinates;
s4: pre-curing the colloid on a heating working disc of the 3D printer;
s5: an operator takes the wafer mirror image with the iron ring away to carry out the next cutting action;
s6: the operator uses the invisible cutting machine to perform invisible cutting on the wafer.
Preferably, the workbench in S1 is a wafer handling platform with an iron ring.
Preferably, a lens positioning mechanism is provided at one side of the 3D printer in S2.
Preferably, the colloid in S4 is used for 3D printer ink.
Preferably, a temperature-rising pre-curing mechanism is arranged inside the 3D printer.
The technical scheme of the invention has the following beneficial effects:
in the 3D printing technology provided by the embodiment of the invention, the 3D printer can avoid the copper column area in the printing process by inputting the wafer copper column coordinates to finish 3D printing of the bonding layer, so that compared with the existing NCF (non-contact printing) process, the material utilization rate is improved, and the material cost is reduced; and the technical blockage of the NCF process is avoided, so that the technology can be applied to large-scale mass production.
Drawings
FIG. 1 is a schematic flow chart of the method of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
As shown in fig. 1, an embodiment of the present invention provides a 3D printing method for replacing NCF in TSV process, which includes the following steps:
s1: an operator places the wafer with the iron ring on the workbench and positions the direction of the wafer through the gap of the iron ring;
s2: an operator inputs the coordinates of the wafer copper cylinder into the 3D printing software, and the 3D printing software transmits the coordinate data to the 3D printer;
s3: the 3D printer positions the wafer through the lens, sprays the colloid on the surface of the wafer and avoids the copper cylinder area through the copper cylinder coordinates;
s4: pre-curing the colloid on a heating working disc of the 3D printer;
s5: an operator takes the wafer mirror image with the iron ring away to carry out the next cutting action;
s6: the operator uses the invisible cutting machine to perform invisible cutting on the wafer.
Wherein the workbench in S1 is a wafer operation platform with an iron ring; a lens positioning mechanism is arranged on one side of the 3D printer in the S2; the colloid in the S4 is used for the 3D printer to use the ink; the inside of 3D printer is equipped with the intensification and solidifies the mechanism in advance.
Specifically, the actually operated workbench has the functions of lens positioning and colloid temperature rise pre-curing.
Specifically, the connection layer colloid needs to meet the requirements of reliability at high and low temperatures and the requirement of no back adhesion after cutting, and the connection layer colloid is used for bonding each layer of colloid and the upper and lower wafers.
Specifically, the operator confirms the wafer copper post coordinate earlier, will confirm good wafer copper post coordinate input 3D again and print the software, until transmitting for the 3D printer, preheat the connecting layer colloid in advance again, through camera lens location wafer after that, with colloid spraying to the wafer surface and successfully avoid the copper post region through the copper post coordinate, after printing finishes, take away at last and take the iron ring wafer mirror image of taking away to carry out stealthy cutting to the wafer.
The working process of the invention is as follows:
in the 3D printing technology provided by the embodiment of the invention, the 3D printer avoids the copper column area in the printing process by inputting the wafer copper column coordinates, 3D printing of the bonding layer is completed, and NCF is not needed, so that compared with the existing NCF process, the material utilization rate is improved, and the manufacturing cost is reduced; and the technical blockage of the NCF process is avoided, so that the technology can be applied to large-scale mass production.
The points to be finally explained are: first, in the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may be a mechanical connection or an electrical connection, or a communication between two elements, and may be a direct connection, and "upper," "lower," "left," and "right" are only used to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may be changed;
secondly, the method comprises the following steps: in the drawings of the disclosed embodiments of the invention, only the structures related to the disclosed embodiments are referred to, other structures can refer to common designs, and the same embodiment and different embodiments of the invention can be combined with each other without conflict;
and finally: the above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention are intended to be included in the scope of the present invention.
Claims (5)
1. A3D printing method for replacing NCF in TSV process is characterized by comprising the following steps:
s1: an operator places the wafer with the iron ring on the workbench and positions the direction of the wafer through the gap of the iron ring;
s2: an operator inputs the coordinates of the wafer copper cylinder into the 3D printing software, and the 3D printing software transmits the coordinate data to the 3D printer;
s3: the 3D printer positions the wafer through the lens, sprays the colloid on the surface of the wafer and avoids the copper cylinder area through the copper cylinder coordinates;
s4: pre-curing the colloid on a heating working disc of the 3D printer;
s5: an operator takes the wafer mirror image with the iron ring away to carry out the next cutting action;
s6: the operator uses the invisible cutting machine to perform invisible cutting on the wafer.
2. The method for 3D printing instead of NCF in TSV process of claim 1, wherein the stage in S1 is a wafer handling platform with iron ring.
3. The 3D printing method for replacing NCF in TSV process of claim 1, wherein a lens positioning mechanism is arranged on one side of the 3D printer in S2.
4. The 3D printing method for replacing NCF in TSV process of claim 1, wherein the colloid in S4 is used for ink of a 3D printer.
5. The 3D printing method for replacing NCF in TSV process as claimed in claim 1, wherein a temperature raising pre-curing mechanism is arranged inside the 3D printer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110856536.3A CN113580557A (en) | 2021-07-28 | 2021-07-28 | 3D printing method for replacing NCF in TSV process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110856536.3A CN113580557A (en) | 2021-07-28 | 2021-07-28 | 3D printing method for replacing NCF in TSV process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113580557A true CN113580557A (en) | 2021-11-02 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110856536.3A Pending CN113580557A (en) | 2021-07-28 | 2021-07-28 | 3D printing method for replacing NCF in TSV process |
Country Status (1)
| Country | Link |
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| CN (1) | CN113580557A (en) |
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| US20100055895A1 (en) * | 2008-09-03 | 2010-03-04 | Zafiropoulo Arthur W | Electrically conductive structure on a semiconductor substrate formed from printing |
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| US20160020192A1 (en) * | 2014-07-17 | 2016-01-21 | Seagate Technology Llc | Non-Circular Die Package Interconnect |
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| CN106206409A (en) * | 2015-05-08 | 2016-12-07 | 华邦电子股份有限公司 | Stacking electronic installation and manufacture method thereof |
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| CN112038286A (en) * | 2020-08-27 | 2020-12-04 | 上海华力集成电路制造有限公司 | Method for improving hillock defect in copper interconnection process |
-
2021
- 2021-07-28 CN CN202110856536.3A patent/CN113580557A/en active Pending
Patent Citations (13)
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| US20100055895A1 (en) * | 2008-09-03 | 2010-03-04 | Zafiropoulo Arthur W | Electrically conductive structure on a semiconductor substrate formed from printing |
| CN104900563A (en) * | 2014-03-06 | 2015-09-09 | Psk有限公司 | Substrate processing device and method |
| US20160020192A1 (en) * | 2014-07-17 | 2016-01-21 | Seagate Technology Llc | Non-Circular Die Package Interconnect |
| CN106206409A (en) * | 2015-05-08 | 2016-12-07 | 华邦电子股份有限公司 | Stacking electronic installation and manufacture method thereof |
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| US20170301611A1 (en) * | 2016-04-15 | 2017-10-19 | Taiwan Semiconductor Manufacturing Company Ltd. | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING A SEMICONDUCTOR DEVICE LAYER FORMED ON A TEMPORARY SUBSTRATE HAVING A GRADED SiGe ETCH STOP LAYER THERE BETWEEN |
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Application publication date: 20211102 |
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