CN113561098A - 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp - Google Patents
770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp Download PDFInfo
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- CN113561098A CN113561098A CN202110964343.XA CN202110964343A CN113561098A CN 113561098 A CN113561098 A CN 113561098A CN 202110964343 A CN202110964343 A CN 202110964343A CN 113561098 A CN113561098 A CN 113561098A
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- semiconductor laser
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- cavity surface
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 239000011248 coating agent Substances 0.000 title claims abstract description 13
- 238000000576 coating method Methods 0.000 title claims abstract description 13
- 239000002585 base Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Semiconductor Lasers (AREA)
Abstract
本发明公开了一种770nm分布反馈布拉格半导体激光腔面镀膜夹具，包括底板1、滑板6和盖板7。底板1包括第一通孔2、第二通孔3、第三通孔4和第四通孔5；盖板3包括：第五通孔8、第六通孔9、第七通孔10、第八通孔11、第一内螺纹孔12和第二内螺纹孔13。在底板1上堆叠解离好的bar条芯片，堆叠好bar条芯片后，再通过第一通孔2和第五通孔8、第二通孔3和第六通孔9、第三通孔4和第七通孔10、第四通孔5和第八通孔11两两匹配将盖板7固定在底板1上。最后将滑板6插入底板1和盖板7之间的滑道，通过第一内螺纹孔12和第二内螺纹孔13固定bar条芯片，装夹完毕，准备镀膜。
The invention discloses a 770nm distributed feedback Bragg semiconductor laser cavity surface coating fixture, comprising a bottom plate 1 , a sliding plate 6 and a cover plate 7 . The bottom plate 1 includes a first through hole 2, a second through hole 3, a third through hole 4 and a fourth through hole 5; the cover plate 3 includes: a fifth through hole 8, a sixth through hole 9, a seventh through hole 10, The eighth through hole 11 , the first internal thread hole 12 and the second internal thread hole 13 . The dissociated bar chips are stacked on the bottom plate 1. After the bar chips are stacked, they pass through the first through hole 2 and the fifth through hole 8, the second through hole 3 and the sixth through hole 9, and the third through hole. 4 and the seventh through hole 10 , the fourth through hole 5 and the eighth through hole 11 are matched in pairs to fix the cover plate 7 on the bottom plate 1 . Finally, insert the slide plate 6 into the slideway between the bottom plate 1 and the cover plate 7, fix the bar chip through the first inner threaded hole 12 and the second inner threaded hole 13, and the clamping is completed, and the coating is ready.
Description
Technical Field
The invention relates to the technical field of semiconductor laser, in particular to a 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp.
Background
The distributed feedback semiconductor laser has the characteristics of high power, high efficiency, narrow line width, tunable wavelength and the like, and is widely applied to the fields of laser communication, laser radar, all-solid-state laser pumping and the like. Transition lines in the part of the spectrum near 770nm containing Mg, K, Fe, Ni and many other atoms have many applications. It is widely used for resonance battery in solar seismology research, estimation of solar atmospheric parameters and pumping of alkali metal atomic clocks. Among them, the atomic clock is used for a timing system of a robot, and the research and application of the robot is now a vigorously developed market, so that the demand for the 770nm distributed feedback bragg semiconductor laser is increasing. However, key factors for restricting the 770nm distributed feedback Bragg semiconductor laser include the fixture problem of laser cavity surface coating and clamping. The most key point for realizing the high power and the high efficiency of the 770nm distributed feedback Bragg semiconductor laser is that the clamping is convenient and rapid, the cavity surface contact pollution is avoided, and the double-sided coating is adopted. The invention provides a 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp which is convenient and rapid to clamp and has no contact pollution on the cavity surface.
Disclosure of Invention
The invention aims to provide a 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp.
A770 nm distributed feedback Bragg semiconductor laser cavity surface coating clamp comprises a bottom plate 1, a sliding plate 6 and a cover plate 7. The bottom plate 1 comprises a first through hole 2, a second through hole 3, a third through hole 4 and a fourth through hole 5; the cover plate 3 includes: a fifth through hole 8, a sixth through hole 9, a seventh through hole 10, an eighth through hole 11, a first internally threaded hole 12, and a second internally threaded hole 13.
The method is characterized in that:
the bar chips dissociated by the 770nm distributed feedback Bragg semiconductor laser are stacked on the bottom plate 1, and after the bar chips dissociated by the 770nm distributed feedback Bragg semiconductor laser are stacked, the cover plate 7 is fixed on the bottom plate 1 through pairwise matching of the first through hole 2, the fifth through hole 8, the second through hole 3, the sixth through hole 9, the third through hole 4, the seventh through hole 10, the fourth through hole 5 and the eighth through hole 11. And finally, inserting the sliding plate 6 into a slideway between the bottom plate 1 and the cover plate 7 to ensure that no gap exists between the clamped bar chips, and fixing the 770nm distributed feedback Bragg semiconductor laser bar chips through the first internal thread hole 12 and the second internal thread hole 13. The middle non-shielding area of the clamp is a cavity surface coating area of a bar chip of the 770nm distributed feedback Bragg semiconductor laser, only two ends of the cavity surface of the bar chip of the 770nm distributed feedback Bragg semiconductor laser are in contact in the clamping process, other parts are not in contact with anything, and cavity surface pollution is not caused.
Drawings
FIG. 1 is a diagram of a fixture according to an embodiment of the present invention.
Detailed Description
The present invention will be further described in detail with reference to fig. 1 for a 770nm dbr semiconductor laser bar chip with a cavity length of 1mm, a bar chip length of 22mm and a bar chip thickness of 100um, but the use of the clamp is not limited to this embodiment: a base plate 1, a slide plate 6 and a cover plate 7. The bottom plate 1 comprises a first through hole 2, a second through hole 3, a third through hole 4 and a fourth through hole 5; the cover plate 3 includes: a fifth through hole 8, a sixth through hole 9, a seventh through hole 10, an eighth through hole 11, a first internally threaded hole 12, and a second internally threaded hole 13.
To the 770nm distribution feedback Bragg semiconductor laser bar chip that the chamber length is 1mm, bar chip length is 22mm and bar chip thickness is 100um, require that the thickness of slide 6 is 1mm, and the width of slide 2 is 22mm, after the bar chip has been guaranteed to the length of slide 6 to have loaded and clamped, first internal thread hole 12 and second internal thread hole 13 can be fixed well the bar chip can. The dimensions of the base plate 1 and the cover plate 7 may be determined according to the dimensions of the slide 6. The fixture can clamp and coat the cavity surface of each bar chip of the 770nm distributed feedback Bragg semiconductor laser with various specifications by changing the thickness of the sliding plate 6 and the width of the sliding plate 6. The number of clamping bar chips of the 770nm distributed feedback Bragg semiconductor laser is determined by changing the length of the sliding plate 6.
Firstly, stacking 770nm distributed feedback Bragg semiconductor laser bar chips with the cavity length of 1mm, the length of 22mm and the thickness of 100um on a bottom plate 1, stacking 100, and then mutually matching two through holes of a screw with a nut through a first through hole 2, a fifth through hole 8, a second through hole 3, a sixth through hole 9, a third through hole 4, a seventh through hole 10, a fourth through hole 5 and an eighth through hole 11 to fix a cover plate 7 on the bottom plate 1. And finally, inserting the sliding plate 6 into a slideway between the bottom plate 1 and the cover plate 7, fixing the bar chip of the 770nm distributed feedback Bragg semiconductor laser by using screws matched with the first internal thread hole 12 and the second internal thread hole 13, and waiting for coating after clamping is finished.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110964343.XA CN113561098A (en) | 2021-08-22 | 2021-08-22 | 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110964343.XA CN113561098A (en) | 2021-08-22 | 2021-08-22 | 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113561098A true CN113561098A (en) | 2021-10-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110964343.XA Pending CN113561098A (en) | 2021-08-22 | 2021-08-22 | 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp |
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| Country | Link |
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| CN (1) | CN113561098A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501042A (en) * | 2020-06-02 | 2020-08-07 | 海南师范大学 | Edge-emitting semiconductor laser chip cavity surface coating clamp |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527732A (en) * | 1993-07-14 | 1996-06-18 | Nec Corporation | Method for fabricating semiconductor laser and photo detecting arrays for wavelength division multiplexing optical interconnections |
| CN111501042A (en) * | 2020-06-02 | 2020-08-07 | 海南师范大学 | Edge-emitting semiconductor laser chip cavity surface coating clamp |
| CN216030317U (en) * | 2021-08-22 | 2022-03-15 | 海南师范大学 | 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp |
-
2021
- 2021-08-22 CN CN202110964343.XA patent/CN113561098A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5527732A (en) * | 1993-07-14 | 1996-06-18 | Nec Corporation | Method for fabricating semiconductor laser and photo detecting arrays for wavelength division multiplexing optical interconnections |
| CN111501042A (en) * | 2020-06-02 | 2020-08-07 | 海南师范大学 | Edge-emitting semiconductor laser chip cavity surface coating clamp |
| CN216030317U (en) * | 2021-08-22 | 2022-03-15 | 海南师范大学 | 770nm distributed feedback Bragg semiconductor laser cavity surface coating clamp |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111501042A (en) * | 2020-06-02 | 2020-08-07 | 海南师范大学 | Edge-emitting semiconductor laser chip cavity surface coating clamp |
| CN111501042B (en) * | 2020-06-02 | 2023-09-01 | 海南师范大学 | Edge-emitting semiconductor laser chip cavity surface coating clamp |
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