CN113555458A - Thin-film solar cell and method of making the same - Google Patents
Thin-film solar cell and method of making the same Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 46
- 229910007709 ZnTe Inorganic materials 0.000 claims abstract description 77
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 59
- 238000010521 absorption reaction Methods 0.000 claims abstract description 31
- 239000006096 absorbing agent Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 49
- 238000002207 thermal evaporation Methods 0.000 claims description 22
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 11
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910015711 MoOx Inorganic materials 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 238000013082 photovoltaic technology Methods 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910002531 CuTe Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 229910004579 CdIn2O4 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910003107 Zn2SnO4 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 150000003498 tellurium compounds Chemical class 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/162—Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
- H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/123—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
- H10F77/1233—Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/148—Shapes of potential barriers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
本申请提供了一种薄膜太阳能电池及其制作方法，涉及光伏技术领域。本申请提供的薄膜太阳能电池中，吸收层包括与背接触层接触的CdTe层，背接触层包括与背电极层接触的掺As的ZnTe层。通过引入掺杂As的ZnTe层，来代替Cu掺杂，能够改善因Cu扩散导致的PN结质量下降，光电转换效率低的问题。相比于Cu掺杂，As替位Te形成Zn3As2结合能较高，为140eV。因此As掺杂能够使背接触层更加稳定，不易扩散到电池吸收层，从而提高薄膜太阳能电池性能的稳定性，使其具有更长的使用寿命。本申请提供的薄膜太阳能电池的制作方法，用于制作上述的薄膜太阳能电池。
The present application provides a thin film solar cell and a manufacturing method thereof, and relates to the field of photovoltaic technology. In the thin film solar cell provided by the present application, the absorption layer includes a CdTe layer in contact with the back contact layer, and the back contact layer includes an As-doped ZnTe layer in contact with the back electrode layer. By introducing an As-doped ZnTe layer instead of Cu doping, the problems of the quality degradation of the PN junction and the low photoelectric conversion efficiency caused by Cu diffusion can be improved. Compared with Cu doping, the binding energy of As-substituted Te to form Zn 3 As 2 is higher, which is 140 eV. Therefore, As doping can make the back contact layer more stable, and it is not easy to diffuse into the cell absorber layer, thereby improving the performance stability of the thin film solar cell and making it have a longer service life. The manufacturing method of the thin film solar cell provided by the present application is used for manufacturing the above-mentioned thin film solar cell.
Description
Technical Field
The application relates to the technical field of photovoltaics, in particular to a thin-film solar cell and a manufacturing method thereof.
Background
The CdTe thin film solar cell has good weak light performance, large light absorption coefficient, low cost and high photoelectric conversion efficiency, and has high market share in the field of thin film solar cells. However, the p-type CdTe material is used as an absorption layer, the work function of the p-type CdTe material is high (about 5.4eV), ohmic contact can be formed by combining the material with the higher work function, the phenomenon that saturation current in a positive voltage direction appears on an I-V curve due to Schottky junction between CdTe and metal (an electrode) is avoided, and roll-over effect is shown. Meanwhile, in order to realize higher current output, the material is required to have excellent conductivity, so that the filling factor and the conversion efficiency of the battery are improved.
The CdTe solar cell in the related art adopts a Cu-containing back contact structure to connect the electrode and CdTe, but still suffers from the problems of low photoelectric efficiency and poor stability.
Disclosure of Invention
The purpose of the present application includes providing a thin film solar cell and a method for manufacturing the same, which has high photoelectric conversion efficiency and good performance stability.
The embodiment of the application can be realized as follows:
in a first aspect, the present application provides a thin film solar cell, including a front electrode layer, and an absorption layer, a back contact layer, and a back electrode layer sequentially stacked, where the absorption layer and the back contact layer are located between the front electrode layer and the back electrode layer;
the absorbing layer comprises a CdTe layer in contact with the back contact layer, and the back contact layer comprises an As-doped ZnTe layer in contact with the back electrode layer.
In an alternative embodiment, the back contact layer further comprises a ZnTe intrinsic layer, both sides of which contact the As-doped ZnTe layer and the absorption layer, respectively.
In an alternative embodiment, the back contact layer further comprises an Ag-doped ZnTe layer, both sides of the Ag-doped ZnTe layer contacting the As-doped ZnTe layer and the absorber layer, respectively.
In an optional embodiment, the thin film solar cell further comprises a buffer layer disposed between the absorption layer and the front electrode layer, the buffer layer being SnO2And (3) a layer.
In an alternative embodiment, the absorber layer further comprises CdSe disposed in superimposition with the CdTe layerxTe1-xLayer of CdSexTe1-xThe layer contacts the side of the CdTe layer facing away from the back contact layer.
In an alternative embodiment, the front electrode layer is a TCO layer.
In an alternative embodiment, the back electrode layer comprises MoOs arranged in a stack in sequencexLayer, Al layer and Cr layer, MoOxThe layer is in contact with the back contact layer.
In a second aspect, the present application provides a method for manufacturing a thin film solar cell, including:
manufacturing a front electrode layer on a substrate;
manufacturing an absorption layer by using a thermal evaporation method, wherein the absorption layer is positioned above the front electrode layer and comprises a CdTe layer;
manufacturing a back contact layer on the CdTe layer by using a thermal evaporation method or a magnetron sputtering method, wherein the back contact layer comprises an As-doped ZnTe layer;
and manufacturing a back electrode layer on the As-doped ZnTe layer.
In an alternative embodiment, the step of fabricating a front electrode layer on a substrate includes:
manufacturing a TCO layer on the substrate by using a magnetron sputtering method to obtain a front electrode layer;
after the front electrode layer is manufactured and before the absorption layer is manufactured, the manufacturing method further comprises the following steps:
a buffer layer for connecting the front electrode layer and the absorption layer is manufactured on the front electrode layer by a magnetron sputtering method, and the buffer layer is SnO2And (3) a layer.
In an alternative embodiment, the step of forming the absorber layer using a thermal evaporation process comprises:
CdSe preparation by thermal evaporation methodxTe1-xA layer;
by thermal evaporation in CdSexTe1-xA CdTe layer is made on the layer to obtain an absorption layer.
In an alternative embodiment, the step of making the back contact layer on the CdTe layer by means of thermal evaporation or magnetron sputtering comprises:
manufacturing a ZnTe intrinsic layer or a ZnTe layer doped with Ag on the CdTe layer by a thermal evaporation method or a magnetron sputtering method;
and manufacturing an As-doped ZnTe layer on the ZnTe intrinsic layer or the Ag-doped ZnTe layer by using a thermal evaporation method or a magnetron sputtering method to obtain the back contact layer.
In an alternative embodiment, the step of fabricating a back electrode layer on the As-doped ZnTe layer comprises:
sequentially manufacturing MoO on the As-doped ZnTe layer by utilizing a magnetron sputtering methodxLayer, Al layer and Cr layer to obtain the back electrode layer.
The beneficial effects of the embodiment of the application include, for example:
in the thin-film solar cell provided by the embodiment of the application, the absorption layer comprises a CdTe layer in contact with the back contact layer, and the back contact layer comprises an As-doped ZnTe layer in contact with the back electrode layer. By introducing the As-doped ZnTe layer to replace Cu doping, the problems of PN junction quality reduction and low photoelectric conversion efficiency caused by Cu diffusion can be solved. As in place of Te to form Zn in comparison with Cu doping3As2The binding energy was higher, 140 eV. Therefore, the As doping can make the back contact layer more stable and not easy to diffuse to the cell absorption layer, thereby improving the film solarThe stability of the battery performance can be realized, so that the battery has longer service life.
The embodiment of the application also provides a manufacturing method of the thin film solar cell, which is used for manufacturing the thin film solar cell.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic cross-sectional view of a thin film solar cell according to an embodiment of the present disclosure;
FIG. 2 is a schematic cross-sectional view of a thin film solar cell according to another embodiment of the present disclosure;
fig. 3 is a flowchart of a method for manufacturing a thin film solar cell according to an embodiment of the present disclosure.
Icon: 010-thin film solar cells; 100-a front electrode layer; 200-a buffer layer; 300-an absorbing layer; 310-CdTe layer; 320-CdSexTe1-xA layer; 400-back contact layer; 410-As-doped ZnTe layer; 420-ZnTe intrinsic layer; 500-a back electrode layer; 510-MoOxA layer; 520-Al layer; 530-Cr layer.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. are used for indicating the orientation or positional relationship based on the orientation or positional relationship shown in the drawings or the orientation or positional relationship which the present invention product is usually put into use, it is only for convenience of describing the present application and simplifying the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation and be operated, and thus, should not be construed as limiting the present application.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present application may be combined with each other without conflict.
In the CdTe thin film solar cell, it is desired to realize high-quality ohmic contact in an attempt to avoid saturation current in the forward voltage direction in the I-V curve due to the schottky junction between CdTe and the electrode. However, p-type CdTe materials as the absorber layer have a high work function (about 5.4eV), and a higher work function material needs to be combined to form an ohmic contact. In the metal contact material, Au has higher work function and conductivity, but the material cost is high, so that the metal contact material is not suitable for large-scale production; the Ni work function is higher, but the preparation process is difficult to copy on a large scale due to the fact that the Ni work function is magnetic material and the sublimation temperature is higher, the equipment cost is higher. In the current CdTe back contact research, tellurium compounds with higher work function and better electric conductivity are AxTe (A is Sb, Ni, Bi and Hg), but because the mismatch degree of a conduction band and CdTe is large, the defect state density is large, electron holes are easy to be compounded in back contact, and the defect state density is reducedThe open circuit voltage is present. The material with higher work function also comprises metal oxide YxO (Y ═ W, Ni, V, Al, Mo, Cu), but because of the too large resistivity, the series resistance Rs of the cell increases, reducing the fill factor FF and the conversion efficiency Eff. Copper doping remains the current major effective means to improve the photoelectric conversion efficiency of CdTe cells compared to the above materials.
The existing copper-doped CdTe back contact structure mainly comprises two structures: the first is to form Cu on the back surface of CdTexAnd the Te layer is used for reducing the back contact potential barrier of the CdTe and the metal electrode. A common approach is to form Cu by wet chemical dopingxTe or respectively plating Cu and Te by PVD (physical vapor deposition), and forming Cu after sinteringxTe, then combined with back electrode Mo or Au to form TCO/CdSexTe1-x/CdTe/CuxTe/Mo (Au) structure, i.e. CuxThe Te is positioned between the back electrode layer and the CdTe layer to connect the back electrode layer and the CdTe layer; the second is to add a layer of semiconductor thin material with higher work function on the back surface of CdTe. The method adopts PVD or evaporation method, uses semiconductor material with higher work function such as ZnTe as buffer layer to reduce Cu diffusion rate, adds a layer of Cu-doped ZnTe as hole transport layer to improve current collection efficiency, and combines with back electrode Mo or Au to form TCO/CdSexTe1-xthe/CdTe/ZnTe/ZnTe: Cu/Mo (Au) structure, and the ZnTe: Cu stands for ZnTe doped with Cu.
In the existing Cu-containing back contact structure of the CdTe solar cell, as the combination energy of Cu and Te is weaker and the atomic radius of Cu is smaller, Cu is easy to diffuse in the grain boundary of the CdTe cell and reaches an n-type layer to cause PN junction short circuit, thereby reducing the photoelectric efficiency of the cell; in addition, Cu has different charge forms inside the CdTe cell, and diffusion of Cu and change in charge form may reduce performance stability of the CdTe cell under light, heat, electricity, and the like. By adding the thin buffer layer between the CdTe and the Cu source, although the short-term stability of the cell can be improved to a certain extent, Cu still penetrates through ZnTe to enter the CdTe, and is rapidly diffused at the CdTe crystal boundary, so that the stability of the cell performance is reduced, and the service life of the cell is shortened.
In order to solve the problems of low photoelectric efficiency and poor stability caused by the adoption of a Cu-containing back contact structure in the related art, the embodiment of the application provides a thin-film solar cell and a manufacturing method thereof, and the photoelectric conversion efficiency and the performance stability are improved by using an As-doped ZnTe layer in a back contact layer.
Fig. 1 is a schematic cross-sectional view of a thin film solar cell 010 according to an embodiment of the present disclosure. Referring to fig. 1, the thin film solar cell 010 of the present embodiment includes a front electrode layer 100, a buffer layer 200, an absorption layer 300, a back contact layer 400, and a back electrode layer 500, which are sequentially stacked. The above layers are shown overlapping from bottom to top in fig. 1. In the embodiment of the present application, the front electrode layer 100 and the back electrode layer 500 communicate with external electric devices (or power storage devices, power grids, etc.) to realize power output.
In the present embodiment, the front electrode layer 100 is a TCO layer, i.e., a transparent conductive oxide layer. The front electrode layer 100 serves as a front surface of the thin film solar cell 010 for directing sunlight, and is required to have high light transmittance and conductivity for collecting electrons. The front electrode layer 100 is required to be electrically conductive, and the light transmittance is to allow sunlight to penetrate through the front electrode layer 100 and reach the rear absorption layer 300 for photoelectric conversion.
The material of the TCO layer may be an oxide, doped oxide or mixed oxide, such as In2O3、ZnO、CdO、ITO、IZO、GZO、AZO、SnO2:F、TiO2:Ta、In2O3-ZnO、CdIn2O4、Cd2SnO4、Zn2SnO4And the like.
In the present embodiment, the buffer layer 200 is in direct contact with the front electrode layer 100, belongs to an N-type layer, and is used for optimizing an energy band structure, and has a high light transmittance. In this example, SnO is selected2The layer serves as a buffer layer 200. In some alternative embodiments, the buffer layer 200 may not be provided, and the front electrode layer 100 may be in direct contact with the absorber layer 300.
In the present embodiment, the absorption layer 300 includes CdSe disposed to overlapxTe1-xLayer 320 and CdTe layer 310, of which CdSexTe1-xLayer 320 in contact with the buffer layer 200, CdTe layer 310 and back contact layer 400 contact. The forbidden band width of the absorption layer 300 in a gradient distribution can improve the long-wavelength band light absorption efficiency.
The back contact layer 400 of the embodiment of the present application includes an As-doped ZnTe layer 410 in contact with the back electrode layer 500. In this embodiment, the back contact layer 400 further includes a ZnTe intrinsic layer 420, both sides of the ZnTe intrinsic layer 420 respectively contact the As-doped ZnTe layer 410 and the absorber layer 300 (i.e., directly contact the CdTe layer 310), and a buffer function is provided between the As-doped ZnTe layer 410 and the CdTe layer 310. The valence band of the ZnTe intrinsic layer 420 is close to that of CdTe, so that hole transmission is facilitated, the conduction band is 0.8eV higher than CdTe, reflection effect is achieved on electrons, and recombination of electron holes in back contact is reduced. In other embodiments of the present application, the ZnTe intrinsic layer 420 can also be replaced by a small amount of Ag-doped ZnTe layer, i.e., both sides of the Ag-doped ZnTe layer contact the As-doped ZnTe layer 410 and the absorber layer 300, respectively, to provide a buffer effect. In the Ag-doped ZnTe layer, the doping amount of Ag can be selected to be 100-300 ppm.
As in the As-doped ZnTe layer 410 As-substituted for Te formed Zn, As compared to the Cu-doped ZnTe layer (a small amount of CuTe formed)3As2The binding energy is 140eV, which is higher than the CuTe binding energy, so the As doping makes the material of the back contact layer 400 more stable and not easy to diffuse to the absorption layer 300, thereby improving the long-term stability of the CdTe solar cell performance. Therefore, the back contact layer 400 in the embodiment of the present application can realize high-quality ohmic contact, and ensure long-term reliability of battery performance while ensuring effective hole transport.
In the present embodiment, the back electrode layer 500 includes moos sequentially stacked and disposedxLayer 510, Al layer 520 and Cr layer 530, MoOxLayer 510 is in contact with back contact layer 400. MoOxLayer 510 has a higher work function, facilitates hole transport, has good Al conductivity, is lower in cost, has good Cr oxidation resistance, and can withstand higher annealing temperatures. Of course, the structure of the back electrode layer 500 is not limited to the above-described form, and other existing structures may be adopted.
Fig. 2 is a schematic cross-sectional view of a thin-film solar cell 010 according to another embodiment of the present invention. In an alternative embodiment, As shown in fig. 2, the back contact layer 400 may also comprise only the As-doped ZnTe layer 410, without the ZnTe intrinsic layer 420 or the Ag-doped ZnTe layer, and the As-doped ZnTe layer 410 is directly brought into contact with the absorber layer 300 and the back electrode layer 500.
Besides the structures described in the above embodiments, the thin-film solar cell 010 provided in the embodiment of the present application may further include more structures, such as a glass substrate disposed on the surface of the front electrode layer 100, which can play a role in protection and meet the requirement of light transmission.
Fig. 3 is a flowchart of a method for manufacturing a thin film solar cell according to an embodiment of the present disclosure. Referring to fig. 3, the method for manufacturing a thin film solar cell provided in the embodiment of the present application may be used for manufacturing the thin film solar cell 010 provided in the above embodiment of the present application, and specifically includes the following steps:
step S100 is to fabricate a front electrode layer on a substrate.
Take the example of manufacturing the thin film solar cell 010 provided in the embodiment of fig. 1. First, a substrate, which may be a transparent glass substrate, is obtained. Then, a TCO layer was fabricated on the substrate by a magnetron sputtering method to obtain the front electrode layer 100.
Step S200, manufacturing a buffer layer for connecting the front electrode layer and the absorption layer on the front electrode layer by using a magnetron sputtering method, wherein the buffer layer is SnO2And (3) a layer.
In some optional embodiments, if the buffer layer 200 is not required to be disposed, the step S200 may be omitted.
Step S300, manufacturing an absorption layer by using a thermal evaporation method, wherein the absorption layer is positioned above the front electrode layer and comprises a CdTe layer.
Take the example of manufacturing the thin film solar cell 010 provided in the embodiment of fig. 1. The step S300 specifically includes:
step S310, preparing CdSe by thermal evaporation methodxTe1-xA layer;
step S320, using thermal evaporation method to deposit CdSexTe1-xA CdTe layer is made on the layer to obtain an absorption layer.
It can be understood that CdSe in the case where the buffer layer 200 is providedxTe1-xLayer 320 is evaporated directly onto the surface of buffer layer 200; if no buffer layer is provided200, CdSe can be directly mixedxTe1-xLayer 320 is evaporated onto the surface of front electrode layer 100.
And S400, manufacturing a back contact layer on the CdTe layer by using a thermal evaporation method or a magnetron sputtering method, wherein the back contact layer comprises an As-doped ZnTe layer.
Specifically, step S400 may further include:
step S410, a ZnTe intrinsic layer or a ZnTe layer doped with Ag is manufactured on the CdTe layer by a thermal evaporation method or a magnetron sputtering method;
step S420, manufacturing an As-doped ZnTe layer on the ZnTe intrinsic layer or the Ag-doped ZnTe layer by using a thermal evaporation method or a magnetron sputtering method to obtain a back contact layer.
In the process of making the thin film solar cell 010 in the embodiment of fig. 1, first the ZnTe intrinsic layer 420 is made on the CdTe layer 310 before making the As-doped ZnTe layer 410; in alternative other embodiments, the ZnTe intrinsic layer 420 may be replaced by a Ag-doped ZnTe layer, or even omitted directly. If step S410 is omitted, the step of producing the As-doped ZnTe layer 410 in step S420 should be performed directly on the CdTe layer 310.
Step S500, a back electrode layer is manufactured on the As-doped ZnTe layer.
Specifically in this embodiment, this step includes the sequential fabrication of MoO on the As-doped ZnTe layer 410 by magnetron sputteringxLayer 510, Al layer 520 and Cr layer 530 to obtain the back electrode layer 500. Of course, if the back electrode layer 500 in other embodiments adopts a different structure, the step should be adjusted to a corresponding method to realize the fabrication of the back electrode layer 500.
In summary, in the thin film solar cell 010 provided by the embodiment of the present application, the absorption layer 300 includes the CdTe layer 310 in contact with the back contact layer 400, and the back contact layer 400 includes the As-doped ZnTe layer 410 in contact with the back electrode layer 500. By introducing the As-doped ZnTe layer to replace Cu doping, the problems of PN junction quality reduction and low photoelectric conversion efficiency caused by Cu diffusion can be solved. As in place of Te to form Zn in comparison with Cu doping3As2The binding energy was higher, 140 eV. As doping can therefore make the back contact layer 400 more stable and less prone to diffusion into the cellThe absorption layer 300 can improve the performance stability of the thin-film solar cell 010, so that the thin-film solar cell 010 has a longer service life.
The embodiment of the application further provides a manufacturing method of the thin film solar cell, which is used for manufacturing the thin film solar cell 010.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (12)
1. The thin film solar cell is characterized by comprising a front electrode layer (100), and an absorption layer (300), a back contact layer (400) and a back electrode layer (500) which are sequentially stacked, wherein the absorption layer (300) and the back contact layer (400) are positioned between the front electrode layer (100) and the back electrode layer (500);
wherein the absorber layer (300) comprises a CdTe layer (310) in contact with the back contact layer (400), the back contact layer (400) comprising an As doped ZnTe layer (410) in contact with the back electrode layer (500).
2. Thin film solar cell according to claim 1, characterized in that the back contact layer (400) further comprises an intrinsic layer (420) of ZnTe, both sides of the intrinsic layer (420) of ZnTe contacting the As doped ZnTe layer (410) and the absorber layer (300), respectively.
3. Thin film solar cell according to claim 1, characterized in that the back contact layer (400) further comprises a Ag doped ZnTe layer, which Ag doped ZnTe layer is in contact with the As doped ZnTe layer (410) and the absorber layer (300) on both sides, respectively.
4. The thin-film solar cell according to claim 1, characterized in that the thin-film solar cell (010) further comprises an absorber layer (300) and the absorber layer (300) are arranged on the absorber layerA buffer layer (200) between the front electrode layers (100), the buffer layer (200) being SnO2And (3) a layer.
5. The thin-film solar cell according to claim 1, wherein the absorber layer (300) further comprises CdSe disposed in overlapping relation with the CdTe layer (310)xTe1-xLayer (320), the CdSexTe1-xThe layer (320) contacts the side of the CdTe layer (310) facing away from the back contact layer (400).
6. Thin film solar cell according to claim 1, characterized in that the front electrode layer (100) is a TCO layer.
7. Thin film solar cell according to claim 1, characterized in that the back electrode layer (500) comprises MoO layers arranged one above the otherxA layer (510), an Al layer (520) and a Cr layer (530), the MoOxA layer (510) is in contact with the back contact layer (400).
8. A method for manufacturing a thin film solar cell is characterized by comprising the following steps:
manufacturing a front electrode layer on a substrate;
manufacturing an absorption layer by using a thermal evaporation method, wherein the absorption layer is positioned above the front electrode layer and comprises a CdTe layer;
manufacturing a back contact layer on the CdTe layer (310) by using a thermal evaporation method or a magnetron sputtering method, wherein the back contact layer comprises an As-doped ZnTe layer;
and manufacturing a back electrode layer on the As-doped ZnTe layer.
9. The method according to claim 8, wherein the step of forming the front electrode layer on the substrate comprises:
manufacturing a TCO layer on the substrate by utilizing a magnetron sputtering method to obtain the front electrode layer;
after the front electrode layer is manufactured and before the absorption layer is manufactured, the manufacturing method further comprises the following steps:
manufacturing a buffer layer used for connecting the front electrode layer and the absorption layer on the front electrode layer by using a magnetron sputtering method, wherein the buffer layer is SnO2And (3) a layer.
10. The method according to claim 8, wherein the step of forming the absorber layer by thermal evaporation comprises:
CdSe preparation by thermal evaporation methodxTe1-xA layer;
by thermal evaporation on the CdSexTe1-xAnd manufacturing the CdTe layer on the layer to obtain the absorption layer.
11. The method according to claim 8, wherein the step of forming a back contact layer on the CdTe layer by using a thermal evaporation method or a magnetron sputtering method comprises:
manufacturing a ZnTe intrinsic layer or an Ag-doped ZnTe layer on the CdTe layer by using a thermal evaporation method or a magnetron sputtering method;
and manufacturing the As-doped ZnTe layer on the ZnTe intrinsic layer or the Ag-doped ZnTe layer by utilizing a thermal evaporation method or a magnetron sputtering method to obtain the back contact layer.
12. The method according to claim 8, wherein the step of forming a back electrode layer on the As-doped ZnTe layer comprises:
sequentially manufacturing MoO on the As-doped ZnTe layer by utilizing a magnetron sputtering methodxA layer, an Al layer and a Cr layer to obtain the back electrode layer.
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Application publication date: 20211026 |