CN113555274B - Chip Cleaning Method - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- H—ELECTRICITY
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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Abstract
Description
技术领域technical field
本发明涉及半导体技术领域,具体涉及一种芯片清洗方法。The invention relates to the technical field of semiconductors, in particular to a chip cleaning method.
背景技术Background technique
发光二极管(Light Emitting Diode,简称LED)是一种将电能转化为光能的半导体电子器件,LED芯片是LED发光的核心部件,LED芯片的制作的后半程包括研磨减薄、划片、裂片、倒膜、扩膜、点测、分选等步骤,现阶段LED芯片朝向精细化、差异化的方向发展,如何提高LED芯片的性能指标一直是本领域技术人员不断追求的目标。Light Emitting Diode (LED for short) is a semiconductor electronic device that converts electrical energy into light energy. LED chips are the core components of LED lighting. The second half of the production of LED chips includes grinding, scribing, and splitting. , Inverting film, film expansion, point measurement, sorting and other steps. At this stage, LED chips are developing in the direction of refinement and differentiation. How to improve the performance indicators of LED chips has always been the goal pursued by technicians in the field.
在LED芯片的制作的后半程中极易对芯片造成污染,主要的污染物来源于以下几个方面:一是在划片裂片过程中,芯片的衬底崩裂而出现的细碎颗粒污染物;二是在倒膜、扩膜过程中蓝膜芯片上的蓝膜脱落而出现的有机污染物;三是在点测过程中,用于点测的探针氧化脱落而出现的金属颗粒污染物;四是在分选过程中,用于分选的吸嘴带来的颗粒污染物和有机污染物;五是在芯片的储存、转移过程中,芯片吸附环境中悬浮的颗粒物污染物、油污污染物。由此可见,在LED芯片的制备过程中会带来污染物造成芯片污染,若污染物不及时处理,LED芯片的可靠性、耐久性都会受到重大影响,例如芯片出现漏电失效、光萃取率低等现象,特别是当芯片的负极(N)、正极(P)如果出现有机物污染或残留,在后续的LED芯片封装中会出现焊线不良等问题,从而给芯片制作厂带来极大的品质隐患和经济损失。In the second half of the production of LED chips, it is very easy to pollute the chips. The main pollutants come from the following aspects: First, the fine particle pollutants that appear when the substrate of the chip breaks during the scribing process; The second is the organic pollutants that appear when the blue film on the blue film chip falls off during the process of pouring and expanding the film; the third is the metal particle pollution that occurs when the probe used for point measurement oxidizes and falls off during the point measurement process; Fourth, in the sorting process, the particulate pollutants and organic pollutants brought by the suction nozzles used for sorting; fifth, in the process of chip storage and transfer, the chip adsorbs suspended particulate pollutants and oil pollutants in the environment . It can be seen that during the preparation of LED chips, pollutants will be brought to cause chip pollution. If the pollutants are not disposed of in time, the reliability and durability of LED chips will be greatly affected, such as leakage failure of the chip and low light extraction rate. and other phenomena, especially when the negative electrode (N) and positive electrode (P) of the chip have organic pollution or residues, problems such as poor bonding wires will occur in the subsequent LED chip packaging, thus bringing great quality to the chip manufacturing factory. hazards and economic losses.
截至目前,业界已经逐渐意识到芯片污染所带来的危害,但随着LED芯片的尺寸越来越小、芯片分选后在承载体(例如蓝膜、UV膜)上固定,使得芯片的清洗难度增加,而传统手动的芯片清洗方法,通过二流体或者高压泵清洗机对芯片进行清洗,往往清洗不彻底,造成芯粒掉落损失。为了提高芯片清洗效率,现有技术逐渐开发出一种芯片自动清洗装置,例如专利文献CN109962028A公开了一种用于芯片的全自动清洗装置和清洗工艺,此自动清洗装置虽然提高了芯片清洗效率,但在芯片的清洗过程中往往造成芯粒的大量掉落和损失,另外,在芯片清洗过程中往往药液处理不干净,残留的药液给芯片带来了二次污染,使得芯片清洗效果差。Up to now, the industry has gradually realized the harm caused by chip pollution, but as the size of LED chips becomes smaller and smaller, and the chips are fixed on the carrier (such as blue film, UV film) after sorting, the cleaning of the chips Difficulty increases, and the traditional manual chip cleaning method uses a second fluid or a high-pressure pump cleaning machine to clean the chip, which is often not cleaned thoroughly, resulting in chip loss. In order to improve chip cleaning efficiency, an automatic chip cleaning device has been gradually developed in the prior art. For example, patent document CN109962028A discloses a fully automatic cleaning device and cleaning process for chips. Although this automatic cleaning device improves chip cleaning efficiency, However, during the chip cleaning process, a large number of core particles are often dropped and lost. In addition, the chemical solution is often not cleaned during the chip cleaning process, and the residual chemical solution brings secondary pollution to the chip, making the chip cleaning effect poor. .
发明内容Contents of the invention
针对现有技术的不足,本发明提供了一种芯片清洗方法,以至少解决现有技术存在的清洗后芯粒容易掉落损失、药液残留造成芯片二次污染等问题。Aiming at the deficiencies of the prior art, the present invention provides a chip cleaning method to at least solve the problems existing in the prior art that the core particles are easy to drop and lose after cleaning, and the chip is secondary polluted by the residue of the chemical solution.
本发明提供一种芯片清洗方法,包括以下步骤:对芯片进行第一烘烤处理后,再依次采用第一混合液、第二混合液、二流体进行清洗处理,将清洗处理后的芯片进行干燥后,再进行第二烘烤处理;其中,第一混合液包括冷脱脂剂和水,第二混合液包括冷脱脂剂和水,第二混合液中冷脱脂剂的体积浓度低于第一混合液中冷脱脂剂的体积浓度。The invention provides a chip cleaning method, comprising the following steps: after the chip is subjected to the first baking treatment, the first mixed liquid, the second mixed liquid, and the second fluid are sequentially used for cleaning treatment, and the cleaned chip is dried Afterwards, carry out the second baking treatment again; Wherein, the first mixed liquid comprises cold degreasing agent and water, the second mixed liquid comprises cold degreasing agent and water, and the volume concentration of cold degreasing agent in the second mixed liquid is lower than the first mixed liquid The volume concentration of the cold degreasing agent in the liquid.
根据本发明的一实施方式,第一烘烤处理的条件为:烘烤温度25-65℃,烘烤时间为300-1800秒;和/或,第二烘烤处理的条件为:烘烤温度25-65℃,烘烤时间为200-1800秒。According to an embodiment of the present invention, the conditions of the first baking treatment are: the baking temperature is 25-65°C, and the baking time is 300-1800 seconds; and/or, the conditions of the second baking treatment are: the baking temperature 25-65℃, the baking time is 200-1800 seconds.
根据本发明的一实施方式,冷脱脂剂包括LF-106冷脱脂剂、HWJ-109冷脱脂剂中的至少一种。According to an embodiment of the present invention, the cold degreasing agent includes at least one of LF-106 cold degreasing agent and HWJ-109 cold degreasing agent.
根据本发明的一实施方式,第一混合液中,冷脱脂剂和水的体积之比为1:1-1:15;和/或,第二混合液中的冷脱脂剂和水的体积之比为1:5-1:25。According to an embodiment of the present invention, in the first mixed liquid, the volume ratio of the cold degreasing agent and water is 1:1-1:15; and/or, the volume ratio of the cold degreasing agent and water in the second mixed liquid The ratio is 1:5-1:25.
根据本发明的一实施方式,还包括:采用第一混合液进行清洗处理后,先采用二流体进行清洗处理,再采用第二混合液进行清洗处理。According to an embodiment of the present invention, it further includes: after using the first mixed liquid for cleaning treatment, firstly using the second fluid for cleaning treatment, and then using the second mixed solution for cleaning treatment.
根据本发明的一实施方式,采用第一混合液进行清洗处理的过程包括:将芯片在第一混合液中浸泡5-80秒后,对芯片进行刷洗处理;和/或,采用第二混合液进行清洗处理的过程包括:将芯片在第二混合液中浸泡5-80秒后,对芯片进行刷洗处理。According to an embodiment of the present invention, the process of using the first mixed solution for cleaning treatment includes: immersing the chip in the first mixed solution for 5-80 seconds, and then brushing the chip; and/or, using the second mixed solution The cleaning process includes: immersing the chip in the second mixed solution for 5-80 seconds, and then brushing the chip.
根据本发明的一实施方式,采用芯片自动清洗机进行刷洗处理,芯片自动清洗机包括清洗台、以及用于刷洗处理的毛刷,在刷洗处理过程中,芯片置于清洗台上并被毛刷刷洗,清洗台的旋转速度为0-500RPM,刷洗处理的时间为1-80秒。According to one embodiment of the present invention, an automatic chip cleaning machine is used for scrubbing. The automatic chip cleaning machine includes a cleaning table and a brush for scrubbing. During the scrubbing process, the chip is placed on the cleaning table and brushed by the brush. For scrubbing, the rotation speed of the cleaning table is 0-500RPM, and the scrubbing time is 1-80 seconds.
根据本发明的一实施方式,二流体包括气体和液体;和/或,采用二流体进行清洗处理的时间为1-600秒。According to an embodiment of the present invention, the two fluids include gas and liquid; and/or, the time for cleaning with the two fluids is 1-600 seconds.
根据本发明的一实施方式,采用芯片自动清洗机进行清洗处理,芯片自动清洗机包括清洗台和第一喷嘴,芯片置于清洗台上,喷嘴用于向清洗台上喷淋二流体,采用二流体进行清洗处理的过程中,清洗台的转速为10-1500RPM,二流体包括气体和液体,液体的压力为0.1-0.8MPa,液体的流速为0.1-0.8L/min。According to one embodiment of the present invention, an automatic chip cleaning machine is used for cleaning treatment. The automatic chip cleaning machine includes a cleaning table and a first nozzle. The chip is placed on the cleaning table, and the nozzle is used to spray two fluids on the cleaning table. During the cleaning process of the fluid, the rotation speed of the cleaning table is 10-1500RPM, the two fluids include gas and liquid, the pressure of the liquid is 0.1-0.8MPa, and the flow rate of the liquid is 0.1-0.8L/min.
根据本发明的一实施方式,采用压缩气体进行干燥,压缩气体的压力为0.08-0.9MPa,干燥时间为1-600秒,控制芯片旋转速度为100-2500RPM。According to one embodiment of the present invention, compressed gas is used for drying, the pressure of the compressed gas is 0.08-0.9 MPa, the drying time is 1-600 seconds, and the rotation speed of the control chip is 100-2500 RPM.
本发明的实施,至少具有以下有益效果:Implementation of the present invention has at least the following beneficial effects:
本发明提供的芯片清洗方法,通过第一烘烤处理,能够增强芯片与载体的黏附强度,防止后续清洗过程中芯粒的掉落,能够保证芯片的完整性和品质,对芯片进行第一烘烤处理后,先采用高配比的清洗液对芯片进行清洗处理,能够最大限度的去除芯片表面的污染物,但采用高配比的清洗剂对芯片进行清洗处理后,芯片表面会有冷脱脂剂等残留,因此再采用低配比的清洗剂清洗芯片,能够溶解芯片表面的冷脱脂剂等残留物,然后再采用二流体对芯片进行清洗,将清洗处理后的芯片进行干燥后,再进行第二烘烤处理,进一步地去除芯片的水汽并增强芯片与载体的黏附强度。采用上述芯片清洗方法不仅可以有效去除芯片表面的污染物,而且清洗后的芯片表面不会有残留清洗液,避免出现二次污染,清洗效果好,此外,该清洗方法还具有操作简单、方便等优点,尤其适用于LED芯片的批量清洗。The chip cleaning method provided by the present invention, through the first baking treatment, can enhance the adhesion strength between the chip and the carrier, prevent the core particles from falling during the subsequent cleaning process, and ensure the integrity and quality of the chip. After the baking process, the chip is cleaned with a high-proportion cleaning solution, which can remove the pollutants on the chip surface to the greatest extent. However, after the chip is cleaned with a high-proportion cleaning agent, there will be cold degreasing agents on the chip surface Therefore, the chip is cleaned with a low-proportion cleaning agent, which can dissolve the residues such as cold degreasing agent on the surface of the chip, and then the chip is cleaned with the second fluid, and the chip after cleaning is dried, and then the second The baking process further removes the moisture of the chip and enhances the adhesion strength between the chip and the carrier. Using the above chip cleaning method can not only effectively remove the pollutants on the chip surface, but also there will be no residual cleaning solution on the chip surface after cleaning, avoiding secondary pollution, and the cleaning effect is good. In addition, the cleaning method is also simple and convenient to operate. Advantages, especially suitable for batch cleaning of LED chips.
附图说明Description of drawings
图1为本发明一实施方式中的芯片清洗方法的流程图;Fig. 1 is the flowchart of the chip cleaning method in one embodiment of the present invention;
图2为本发明实施1中的清洗后的芯片的整体外观图;Fig. 2 is the overall appearance diagram of the chip after cleaning in the
图3为本发明实施2中的清洗后的芯片的能谱仪(EDS)元素分析图;Fig. 3 is the energy spectrometer (EDS) elemental analysis diagram of the cleaned chip in the
图4为本发明对比例1中清洗后的芯片的整体外观图;Fig. 4 is the overall appearance diagram of the cleaned chip in Comparative Example 1 of the present invention;
图5为本发明对比例2中清洗后的芯片表面的能谱仪(EDS)元素分析图。5 is an energy dispersive spectrometer (EDS) elemental analysis diagram of the cleaned chip surface in Comparative Example 2 of the present invention.
具体实施方式Detailed ways
为使本领域技术人员更好地理解本发明的方案,下面对本发明作进一步地详细说明。In order to enable those skilled in the art to better understand the solution of the present invention, the present invention will be further described in detail below.
本发明提供的芯片清洗方法,包括以下步骤:对芯片进行第一烘烤处理后,再依次采用第一混合液、第二混合液、二流体进行清洗处理,将清洗处理后的芯片进行干燥后,再进行第二烘烤处理;其中,第一混合液包括冷脱脂剂和水,第二混合液包括冷脱脂剂和水,第二混合液中冷脱脂剂的体积浓度低于第一混合液中冷脱脂剂的体积浓度。The chip cleaning method provided by the present invention comprises the following steps: after the chip is subjected to the first baking treatment, the first mixed solution, the second mixed solution, and the second fluid are used for cleaning treatment in sequence, and the cleaned chip is dried. , and then carry out the second baking treatment; wherein, the first mixed liquid includes cold degreasing agent and water, the second mixed liquid includes cold degreasing agent and water, and the volume concentration of cold degreasing agent in the second mixed liquid is lower than that of the first mixed liquid The volume concentration of intercooler degreaser.
具体地,第一次烘烤处理的目的在于增强芯片与载体的黏附强度,防止清洗过程中芯粒的松动脱落,先采用高配比的冷脱脂剂和水的混合试剂对芯片进行清洗处理,是为了最大限度的去除芯片表面的污染物,例如芯片表面的金属、灰尘等颗粒污染物、油脂类污染物等,但采用高配比的混合试剂清洗后的芯片表面会有冷脱脂剂等清洗液的残留,因此采用低配比的冷脱脂剂和水的混合试剂,溶解芯片表面的冷脱脂剂等残留物,然后再采用二流体对芯片进行清洗,采用上述清洗处理不仅可以有效去除芯片表面的污染物,而且清洗后的芯片表面不残留第一混合液、第二混合液等清洗液,不会出现二次污染;将清洗处理后的芯片进行干燥后,再将芯片进行第二烘烤处理,第二次烘烤处理的目的在于烘干芯片上残留的少量水分(水汽),并进一步增强芯片与载体的黏附强度。Specifically, the purpose of the first baking treatment is to enhance the adhesion strength between the chip and the carrier, and prevent the core particles from loosening and falling off during the cleaning process. In order to remove pollutants on the chip surface to the greatest extent, such as metal, dust and other particle pollutants on the chip surface, grease pollutants, etc., the surface of the chip after cleaning with a high proportion of mixed reagents will have cleaning solutions such as cold degreasing agents. Therefore, a low-proportion cold degreasing agent and water mixed reagent is used to dissolve the cold degreasing agent and other residues on the surface of the chip, and then the chip is cleaned with the second fluid. The above cleaning treatment can not only effectively remove the pollution on the chip surface substances, and the surface of the cleaned chip does not remain on the surface of the first mixed solution, the second mixed solution and other cleaning solutions, and there will be no secondary pollution; after the cleaned chip is dried, the chip is then subjected to the second baking process, The purpose of the second baking treatment is to dry the small amount of moisture (water vapor) remaining on the chip and further enhance the adhesion strength between the chip and the carrier.
具体地,本发明提供的芯片清洗方法适用于对芯片的表面清洗,尤其针对分选后的发光二极管芯片(LED芯片)的清洗,分选一般是将点测后的LED芯片按照波长、发光强度、反向漏电良率以及工作电压等参数标准进行区别分类,其结果是把LED芯片分成很多档(Bin)和类别,然后通过分选机根据设定的测试标准把LED芯片分装在不同的料盒(Bin盒)内。Specifically, the chip cleaning method provided by the present invention is suitable for cleaning the surface of chips, especially for the cleaning of sorted light-emitting diode chips (LED chips). , Reverse leakage yield and working voltage and other parameter standards are distinguished and classified. As a result, the LED chips are divided into many bins and categories, and then the LED chips are divided into different bins according to the set test standards by the sorting machine. Inside the material box (Bin box).
芯片具有芯粒和用于固定或承载芯粒的膜,例如蓝膜、UV膜等,本发明的芯片可以是本领域常规芯片,例如载体是蓝膜或UV膜的芯片。The chip has a core particle and a film for fixing or carrying the core particle, such as a blue film, a UV film, etc. The chip of the present invention can be a conventional chip in the field, such as a chip whose carrier is a blue film or a UV film.
本发明中,可以对芯片进行批量清洗,在具体实施过程中,可以将分选后的芯片装在不同料盒内,其中每个料盒能够装载1-50张芯片,把料盒放入烘烤装置(如烘箱或烤箱等)内进行烘烤,以实现对芯片进行第一烘烤处理,然后再对烘烤处理后的芯片进行清洗处理,将清洗处理后的芯片进行干燥后,可以把干燥后的芯片装在不同料盒内,把料盒放入烘烤装置(如烘箱或烤箱等)内进行烘烤,以实现对芯片进行第二烘烤处理。In the present invention, the chips can be cleaned in batches. In the specific implementation process, the sorted chips can be packed in different material boxes, wherein each material box can be loaded with 1-50 chips, and the material boxes can be put into the oven. Bake in a baking device (such as an oven or an oven, etc.) to achieve the first baking process on the chip, and then clean the chip after the baking process, and dry the chip after the cleaning process, you can put The dried chips are packed in different magazines, and the magazines are put into a baking device (such as an oven or an oven) for baking, so as to implement the second baking process on the chips.
通过第一烘烤处理,能够增强芯片强度,例如加强芯粒与用于固定或承载芯粒的膜之间的黏附力,从而利于后续清洗处理,防止清洗过程中芯粒的松动脱落,保证清洗后芯片的品质。具体地,在一些优选实施例中,第一烘烤处理的温度可以为25-65℃,例如25℃、30℃、35℃、40℃、45℃、50℃、55℃、60℃、65℃或其中的任意两者组成的范围,第一烘烤处理的时间为300-1800秒,例如300秒、400秒、800秒、1000秒、1500秒、1800秒或其中的任意两者组成的范围。Through the first baking process, the strength of the chip can be enhanced, for example, the adhesion between the core particle and the film used to fix or carry the core particle can be strengthened, so as to facilitate the subsequent cleaning process, prevent the core particle from loosening and falling off during the cleaning process, and ensure cleaning. The quality of the post chip. Specifically, in some preferred embodiments, the temperature of the first baking treatment may be 25-65°C, such as 25°C, 30°C, 35°C, 40°C, 45°C, 50°C, 55°C, 60°C, 65°C ℃ or any combination thereof, the time of the first baking treatment is 300-1800 seconds, such as 300 seconds, 400 seconds, 800 seconds, 1000 seconds, 1500 seconds, 1800 seconds or any combination thereof scope.
经干燥后,芯片上一般会残留少量水气,通过第二烘烤处理,可以去除芯片表面残留的水汽,并进一步保证增强芯片强度,避免芯粒的松动脱落,保证清洗后芯片的品质。经进一步研究,第二烘烤处理的温度可以为25-65℃,例如25℃、30℃、35℃、40℃、45℃、50℃、55℃、60℃、65℃或其中的任意两者组成的范围,第二烘烤处理的时间为200-1800秒,例如200秒、400秒、800秒、1000秒、1500秒、1800秒或其中的任意两者组成的范围。After drying, a small amount of water vapor will generally remain on the chip. The second baking process can remove the residual water vapor on the chip surface, further ensure the strength of the chip, prevent the core particles from loosening and falling off, and ensure the quality of the chip after cleaning. After further research, the temperature of the second baking treatment can be 25-65°C, such as 25°C, 30°C, 35°C, 40°C, 45°C, 50°C, 55°C, 60°C, 65°C or any two of them. The range of the composition, the time of the second baking treatment is 200-1800 seconds, such as 200 seconds, 400 seconds, 800 seconds, 1000 seconds, 1500 seconds, 1800 seconds or any combination thereof.
一般情况下,冷脱脂剂为液体状态,包括碱性脱脂剂、乳液脱脂剂、溶剂脱脂剂中的至少一种。在一些实施例中,冷脱脂剂包括LF-106冷脱脂剂、HWJ-109冷脱脂剂中的至少一种,具体可以是选自龙飞环保科技有限公司型号为LF-106的冷脱脂剂,也可以是选自辉炜佳金属科技有限公司型号为HWJ-109的冷脱脂剂。Generally, the cold degreasing agent is in a liquid state, including at least one of an alkaline degreasing agent, an emulsion degreasing agent, and a solvent degreasing agent. In some embodiments, the cold degreasing agent includes at least one of LF-106 cold degreasing agent and HWJ-109 cold degreasing agent, specifically, it can be a cold degreasing agent selected from Longfei Environmental Protection Technology Co., Ltd. model LF-106, It can also be selected from the cold degreasing agent of Huiweijia Metal Technology Co., Ltd. model HWJ-109.
在一些实施例中,第一混合液中,冷脱脂剂和水的体积之比为1:1-1:15,例如1:1、1:3、1:5、1:7、1:8、1:11、1:13、1:15或其中的任意两者组成的范围,具体实施时,第一混合液可以是由冷脱脂剂和水组成。In some embodiments, in the first mixed liquid, the volume ratio of the cold degreasing agent to water is 1:1-1:15, such as 1:1, 1:3, 1:5, 1:7, 1:8 , 1:11, 1:13, 1:15 or any two of them. In practice, the first mixed liquid may be composed of cold degreasing agent and water.
在一些实施例中,第二混合液中的冷脱脂剂和水的体积之比为1:5-1:25,例如1:5、1:7、1:10、1:12、1:15、1:18、1:20、1:25或其中的任意两者组成的范围,具体实施时,第二混合液可以是由冷脱脂剂和水组成。In some embodiments, the volume ratio of the cold degreasing agent and water in the second mixed liquid is 1:5-1:25, such as 1:5, 1:7, 1:10, 1:12, 1:15 .
在一些实施例中,还包括:采用第一混合液进行清洗处理后,先采用二流体进行清洗处理,再采用第二混合液进行清洗处理。具体地,如图1所示,对芯片进行第一烘烤处理后,再依次采用第一混合液、二流体(记为第一二流体)、第二混合液、二流体(记为第二二流体)进行清洗处理,进一步去除芯片表面的第一混合液、第二混合液等清洗液残留物。In some embodiments, the method further includes: after using the first mixed solution for cleaning treatment, first using the second fluid for cleaning treatment, and then using the second mixed solution for cleaning treatment. Specifically, as shown in FIG. 1, after the chip is subjected to the first baking treatment, the first mixed solution, the second fluid (referred to as the first and second fluid), the second mixed solution, and the second fluid (referred to as the second fluid) are sequentially used. Second fluid) for cleaning treatment to further remove cleaning solution residues such as the first mixed solution and the second mixed solution on the surface of the chip.
在一些实施例中,二流体包括气体和液体,即上述第一二流体可以包括气体和液体,第二二流体可以包括气体和液体,第一二流体、第二二流体可以相同或不同。可选地,二流体中的液体可以包括水,例如去离子水,气体可以包括高纯氮气。In some embodiments, the two fluids include gas and liquid, that is, the above-mentioned first and second fluids may include gas and liquid, and the second and second fluids may include gas and liquid, and the first and second fluids and the second and second fluids may be the same or different. Optionally, the liquid in the two fluids may include water, such as deionized water, and the gas may include high-purity nitrogen.
在一些实施例中,采用第一混合液进行清洗处理的过程包括:将芯片在第一混合液中浸泡5-80秒后,对芯片进行刷洗处理。In some embodiments, the cleaning process using the first mixed solution includes: immersing the chip in the first mixed solution for 5-80 seconds, and then brushing the chip.
在本发明的具体实施中,采用芯片自动清洗机对芯片进行清洗处理,其中芯片自动清洗机包括清洗室、清洗台、至少一个喷头,清洗台设置在清洗室内,用于向清洗机的清洗室喷入第一混合液的第一喷头,第一喷头设置有连接第一混合液的管道。在采用芯片自动清洗机进行清洗处理时,将芯片放置在清洗台上,第一喷头朝向芯片,将第一混合液通过第一喷头喷淋在芯片上,使得第一混合液浸没芯片,浸泡后对芯片进行刷洗处理,其中喷淋时间为3-50秒,例如3秒、8秒、12秒、24秒、48秒、50秒或其中的任意两者组成的范围,浸泡时间为5-80秒,例如5秒、10秒、20秒、30秒、40秒、50秒、60秒、70秒、80秒或其中的任意两者组成的范围。In the specific implementation of the present invention, an automatic chip cleaning machine is used to clean the chips, wherein the automatic chip cleaning machine includes a cleaning room, a cleaning table, and at least one spray head, and the cleaning table is arranged in the cleaning room for feeding the cleaning room of the cleaning machine. A first spray head for spraying the first mixed liquid, the first spray head is provided with a pipeline connected with the first mixed liquid. When using an automatic chip cleaning machine for cleaning, the chip is placed on the cleaning table, the first nozzle faces the chip, and the first mixed solution is sprayed on the chip through the first nozzle so that the first mixed solution is immersed in the chip. The chip is brushed and cleaned, wherein the spraying time is 3-50 seconds, such as 3 seconds, 8 seconds, 12 seconds, 24 seconds, 48 seconds, 50 seconds or any two of them, and the soaking time is 5-80 seconds. Seconds, such as 5 seconds, 10 seconds, 20 seconds, 30 seconds, 40 seconds, 50 seconds, 60 seconds, 70 seconds, 80 seconds or any two of them.
在一些实施例中,采用第二混合液进行清洗处理的过程包括:将芯片在第二混合液中浸泡5-80秒后,对芯片进行刷洗处理。In some embodiments, the cleaning process using the second mixed solution includes: immersing the chip in the second mixed solution for 5-80 seconds, and then brushing the chip.
在本发明的具体实施中,采用芯片自动清洗机对芯片进行清洗处理,其中芯片自动清洗机包括清洗室、清洗台、至少一个喷头,清洗台设置在清洗室内,用于向清洗机的清洗室喷入第二混合液的第二喷头,第二喷头设置有连接第二混合液的管道。在采用芯片自动清洗机进行清洗处理时,将待清洗的芯片放置在清洗台上,第二喷头朝向待清洗的芯片,将第二混合液通过第二喷头喷淋在待清洗的芯片上,使得第二混合液浸没芯片,浸泡后对芯片进行刷洗处理,其中喷淋时间为3-50秒,例如3秒、8秒、12秒、24秒、48秒、50秒或其中的任意两者组成的范围,浸泡时间为5-80秒,例如5秒、10秒、20秒、30秒、40秒、50秒、60秒、70秒、80秒或其中的任意两者组成的范围。In the specific implementation of the present invention, an automatic chip cleaning machine is used to clean the chips, wherein the automatic chip cleaning machine includes a cleaning room, a cleaning table, and at least one spray head, and the cleaning table is arranged in the cleaning room for feeding the cleaning room of the cleaning machine. The second spray head is sprayed into the second mixed liquid, and the second spray head is provided with a pipeline connected with the second mixed liquid. When using an automatic chip cleaning machine for cleaning, the chip to be cleaned is placed on the cleaning table, the second nozzle faces the chip to be cleaned, and the second mixed solution is sprayed on the chip to be cleaned through the second nozzle, so that The chip is submerged in the second mixture, and the chip is brushed after soaking, wherein the spraying time is 3-50 seconds, such as 3 seconds, 8 seconds, 12 seconds, 24 seconds, 48 seconds, 50 seconds or any combination thereof The range of soaking time is 5-80 seconds, such as 5 seconds, 10 seconds, 20 seconds, 30 seconds, 40 seconds, 50 seconds, 60 seconds, 70 seconds, 80 seconds or any two of them.
在一些实施例中,采用芯片自动清洗机进行刷洗处理,芯片自动清洗机包括清洗台、以及用于刷洗处理的毛刷,在刷洗处理过程中,芯片置于清洗台上并被毛刷刷洗,清洗台的旋转速度为0-500RPM,刷洗处理的时间为1-80秒。In some embodiments, an automatic chip cleaning machine is used for scrubbing. The automatic chip cleaning machine includes a cleaning table and a brush for scrubbing. During the scrubbing process, the chip is placed on the cleaning table and brushed by the brush. The rotation speed of the cleaning table is 0-500RPM, and the time for scrubbing is 1-80 seconds.
具体地,芯片自动清洗机包括清洗室、清洗台(或称载台)、毛刷,其中清洗台设置在清洗室内,将芯片放置在载台上,毛刷在芯片表面进行刷洗,其中当载台的旋转速度为零时,载台以及载台上的芯片不旋转,毛刷在芯片表面以扇形摆动刷洗1-80秒,例如1秒、5秒、10秒、20秒、30秒、40秒、50秒、60秒、70秒、80秒或其中的任意两者组成份范围,当载台的旋转速度不为零时,载台带动载台上的芯片旋转,载台的旋转速度为0-500RPM,例如0、20RPM、50RPM、100RPM、150RPM、200RPM、300RPM、400RPM、500RPM或其中的任意两者组成的范围,RPM是指转每分,每分钟的旋转次数,例如150RPM是指150转每分,即载台每分钟旋转150转,载台旋转速度等于芯片旋转速度。芯片自动清洗机可以采用常规的芯片自动清洗机,例如可以是型号为C1502BS的芯片自动清洗机。Specifically, the chip automatic cleaning machine includes a cleaning room, a cleaning table (or called a carrier), and a brush, wherein the cleaning table is set in the cleaning room, the chip is placed on the carrier, and the brush is used to scrub the surface of the chip. When the rotation speed of the stage is zero, the stage and the chip on the stage do not rotate, and the brush oscillates on the surface of the chip for 1-80 seconds, such as 1 second, 5 seconds, 10 seconds, 20 seconds, 30 seconds, 40 seconds seconds, 50 seconds, 60 seconds, 70 seconds, 80 seconds or any two of them. When the rotation speed of the stage is not zero, the stage drives the chips on the stage to rotate, and the rotation speed of the stage is 0-500RPM, such as 0, 20RPM, 50RPM, 100RPM, 150RPM, 200RPM, 300RPM, 400RPM, 500RPM or any two of them, RPM refers to revolutions per minute, the number of rotations per minute, for example, 150RPM refers to 150 Rotation per minute, that is, the stage rotates 150 revolutions per minute, and the rotation speed of the stage is equal to the rotation speed of the chip. The chip automatic cleaning machine can adopt a conventional chip automatic cleaning machine, for example, it can be a chip automatic cleaning machine modeled as C1502BS.
具体地,采用二流体清洗装置来进行二流体清洗处理,二流体清洗装置包括二流体喷头、进气管、进液管、连接管,进液管通过连接管与二流体喷嘴相连,进气管通过连接管与二流体喷头连接。在二流体清洗过程中,进气管中通入的是气体,进液管中通入的是液体,进气管通过连接管将气体通入二流体喷头,进液管通过连接管将液体通入二流体喷头,进气管中的气体和进液管中的液体在连接管内混合形成二流体水气混合液,二流体水气混合液通过二流体喷头产生二流体喷雾,二流体喷雾对芯片进行冲洗,二流体喷雾进入芯片表面的细孔内,利用气体的力量,吹掉芯片表面的水分,提高清洗效果,实现二流体喷雾对芯片的清洗处理,其中气体包括氮气。Specifically, a two-fluid cleaning device is used for two-fluid cleaning treatment. The two-fluid cleaning device includes a two-fluid nozzle, an air inlet pipe, a liquid inlet pipe, and a connecting pipe. The tube is connected to the two-fluid spray head. During the two-fluid cleaning process, gas is passed into the inlet pipe, and liquid is passed into the liquid inlet pipe. The gas inlet pipe passes the gas into the second-fluid nozzle through the connecting pipe, and the liquid inlet pipe passes the liquid into the The fluid nozzle, the gas in the intake pipe and the liquid in the liquid inlet pipe are mixed in the connecting pipe to form a two-fluid water-air mixture, and the two-fluid water-air mixture passes through the two-fluid nozzle to produce a two-fluid spray, and the two-fluid spray flushes the chip. The two-fluid spray enters the pores on the surface of the chip, and uses the power of the gas to blow off the moisture on the surface of the chip to improve the cleaning effect and realize the cleaning treatment of the chip by the two-fluid spray, wherein the gas includes nitrogen.
在一些实施例中,采用二流体进行清洗处理的时间为1-600秒,例如1秒、15秒、25秒、35秒、45秒、60秒、100秒、200秒、300秒、400秒、500秒、600秒或其中的任意两者组成的范围。In some embodiments, the time for cleaning with two fluids is 1-600 seconds, such as 1 second, 15 seconds, 25 seconds, 35 seconds, 45 seconds, 60 seconds, 100 seconds, 200 seconds, 300 seconds, 400 seconds , 500 seconds, 600 seconds, or any two of them.
在一些实施例中,采用芯片自动清洗机进行清洗处理,芯片自动清洗机包括清洗台和第一喷嘴,芯片置于清洗台上,喷嘴用于向清洗台上喷淋二流体,采用二流体进行清洗处理的过程中,清洗台的转速为10-1500RPM,例如10RPM、50RPM、100RPM、500RPM、1000RPM、1500RPM或其中的任意两者组成的范围,二流体包括气体和液体,液体的压力为0.1-0.8MPa,例如0.1Mpa、0.12Mpa、0.2Mpa、0.4Mpa、0.5Mpa、0.6Mpa、0.7Mpa、0.8Mpa或其中的任意两者组成的范围,液体的流速为0.1-0.8L/min,例如0.1L/min、0.12L/min、0.13L/min、0.2L/min、0.4L/min、0.6L/min、0.8L/min或其中的任意两者组成的范围。例如,在一些实施例中,二流体中的液体为水,采用二流体进行清洗处理的过程中,可以控制该水的水压为0.1-0.8MPa。In some embodiments, an automatic chip cleaning machine is used for cleaning. The automatic chip cleaning machine includes a cleaning table and a first nozzle. The chip is placed on the cleaning table, and the nozzle is used to spray two fluids on the cleaning table. During the cleaning process, the rotation speed of the cleaning table is 10-1500RPM, such as 10RPM, 50RPM, 100RPM, 500RPM, 1000RPM, 1500RPM or any two of them. The two fluids include gas and liquid, and the pressure of the liquid is 0.1- 0.8MPa, such as 0.1Mpa, 0.12Mpa, 0.2Mpa, 0.4Mpa, 0.5Mpa, 0.6Mpa, 0.7Mpa, 0.8Mpa or any two of them, the flow rate of the liquid is 0.1-0.8L/min, such as 0.1 L/min, 0.12L/min, 0.13L/min, 0.2L/min, 0.4L/min, 0.6L/min, 0.8L/min or any two of them. For example, in some embodiments, the liquid in the second fluid is water, and the water pressure of the water can be controlled to be 0.1-0.8 MPa during the cleaning process using the second fluid.
具体地,芯片自动清洗机包括清洗室、设置在清洗室内的清洗台、用于向清洗机的清洗室喷入第一混合液的第一喷嘴、用于向清洗机的清洗室喷入第二混合液的第二喷嘴、用于向清洗机的清洗室喷入二流体的二流体喷嘴。在采用上述芯片自动清洗机进行芯片的清洗处理时,将芯片放置在清洗台上,通过第一喷嘴向清洗台上的芯片喷淋第一混合液,通过第二喷嘴向清洗台上的芯片喷淋第二混合液,通过二流体喷嘴向清洗台上的芯片喷淋二流体。具体地,在采用二流体进行清洗处理的过程中,将芯片放置在清洗台上,随清洗台转动,芯片的转速基本等于清洗台的转速。Specifically, the chip automatic cleaning machine includes a cleaning chamber, a cleaning table arranged in the cleaning chamber, a first nozzle for spraying the first mixed liquid into the cleaning chamber of the cleaning machine, and a first nozzle for spraying the second mixed liquid into the cleaning chamber of the cleaning machine. The second nozzle for mixed liquid, the two-fluid nozzle for spraying two fluids into the cleaning chamber of the cleaning machine. When using the above-mentioned chip automatic cleaning machine to clean the chips, place the chips on the cleaning table, spray the first mixed liquid to the chips on the cleaning table through the first nozzle, and spray the first mixed liquid to the chips on the cleaning table through the second nozzle. The second mixed liquid is sprayed, and the second fluid is sprayed to the chip on the cleaning table through the two-fluid nozzle. Specifically, during the cleaning process using the two fluids, the chip is placed on the cleaning table, and rotates with the cleaning table, and the rotation speed of the chip is basically equal to the rotation speed of the cleaning table.
在一些实施例中,采用压缩气体进行干燥,压缩气体是被压缩的空气,例如压缩氮气,压缩气体的压力为0.08-0.9MPa,例如0.08MPa、0.1MPa、0.2MPa、0.4MPa、0.6MPa、0.8MPa、0.9MPa或其中的任意两者组成的范围,干燥时间为1-600秒,例如1秒、20秒、30秒、40秒、80秒、120秒、200秒、400秒、600秒或其中的任意两者组成的范围,控制芯片旋转速度为100-2500RPM,例如100RPM、150RPM、200RPM、500RPM、1000RPM、1500RPM、1800RPM、2000RPM、2500RPM或其中的任意两者组成的范围。In some embodiments, compressed gas is used for drying, the compressed gas is compressed air, such as compressed nitrogen, and the pressure of the compressed gas is 0.08-0.9MPa, such as 0.08MPa, 0.1MPa, 0.2MPa, 0.4MPa, 0.6MPa, The range of 0.8MPa, 0.9MPa or any two of them, the drying time is 1-600 seconds, such as 1 second, 20 seconds, 30 seconds, 40 seconds, 80 seconds, 120 seconds, 200 seconds, 400 seconds, 600 seconds Or the range composed of any two of them, the control chip rotation speed is 100-2500RPM, such as 100RPM, 150RPM, 200RPM, 500RPM, 1000RPM, 1500RPM, 1800RPM, 2000RPM, 2500RPM or any two of them.
具体地,采用芯片自动清洗机进行干燥处理,芯片自动清洗机包括包括清洗室、设置在清洗室内的清洗台、用于向清洗机的清洗室喷入压缩空气的第三喷嘴,具体过程包括:将芯片放置在清洗台上,随清洗台转动,芯片的转速基本等于清洗台的转速,通过第三喷嘴朝向芯片喷压缩气体进行干燥处理,利用压缩空气的力量吹掉残留在芯片上的水分,利用载台的离心力去除芯片上的水分,从而实现干燥,具体地,在采用二流体进行清洗处理的过程中,将芯片放置在清洗台上。Specifically, an automatic chip cleaning machine is used for drying treatment. The automatic chip cleaning machine includes a cleaning room, a cleaning table arranged in the cleaning room, and a third nozzle for spraying compressed air into the cleaning room of the cleaning machine. The specific process includes: Place the chip on the cleaning table and rotate with the cleaning table. The speed of the chip is basically equal to the speed of the cleaning table. The compressed air is sprayed towards the chip through the third nozzle for drying treatment, and the moisture remaining on the chip is blown off by the power of compressed air. The centrifugal force of the stage is used to remove the water on the chip, so as to achieve drying. Specifically, the chip is placed on the cleaning stage during the cleaning process using the two fluids.
一般情况下,采用上述芯片清洗方法清洗芯片后,可以在清洗后的芯片表面贴上离型纸,保护清洗后的芯片不受污染,更利于对清洗后的芯片进行保存。Generally, after the chip is cleaned by the above-mentioned chip cleaning method, a release paper can be pasted on the surface of the cleaned chip to protect the cleaned chip from contamination, which is more conducive to preservation of the cleaned chip.
下面通过具体实施例和对比例对本发明作进一步的说明。The present invention will be further described below by specific examples and comparative examples.
实施例1Example 1
在型号为C1502BS的芯片自动清洗机上进行芯片清洗,其中上述芯片自动清洗机包括清洗室、清洗台(或称载台)、用于向清洗机的清洗室喷入第一混合液的第一喷嘴、用于向清洗机的清洗室喷入第二混合液的第二喷嘴、用于向清洗机的清洗室喷入二流体的二流体喷嘴、用于向清洗机的清洗室喷入压缩气体的第三喷嘴,其中芯片为分选后的LED芯片,载体为蓝膜,冷脱脂剂为龙飞环保科技有限公司型号为LF-106的冷脱脂剂,采用以下步骤进行芯片的清洗:Carry out chip cleaning on the automatic chip cleaning machine model of C1502BS, wherein the above-mentioned automatic chip cleaning machine includes a cleaning chamber, a cleaning table (or loading table), and a first nozzle for spraying the first mixed liquid into the cleaning chamber of the cleaning machine , the second nozzle for spraying the second mixed liquid into the cleaning chamber of the cleaning machine, the two-fluid nozzle for spraying the second fluid into the cleaning chamber of the cleaning machine, and the nozzle for spraying compressed gas into the cleaning chamber of the cleaning machine The third nozzle, in which the chips are sorted LED chips, the carrier is a blue film, and the cold degreasing agent is the cold degreasing agent of Longfei Environmental Protection Technology Co., Ltd. model LF-106. The following steps are used to clean the chips:
S1、将芯片放入烘箱中进行第一烘烤处理,其中烘箱温度为35℃,烘烤时间为1200秒;S1. Put the chip into an oven for the first baking treatment, wherein the oven temperature is 35°C, and the baking time is 1200 seconds;
S2、将芯片放置在载台上,使第一混合液朝向芯片喷淋12秒后,浸没芯片,浸泡5秒后,使用毛刷在芯片表面以扇形摆动刷洗30秒,其中第一混合液中冷脱脂剂和去离子水的体积比为冷脱脂剂:去离子水=1:5,载台的转动速度为150RPM;S2. Place the chip on the stage, spray the first mixed solution towards the chip for 12 seconds, then immerse the chip, soak for 5 seconds, and use a brush to brush the surface of the chip in a fan shape for 30 seconds, wherein the first mixed solution The volume ratio of cold degreasing agent and deionized water is cold degreasing agent: deionized water=1:5, and the rotation speed of the stage is 150RPM;
S3、采用二流体冲洗芯片,其中载台转动速度为1000RPM,冲洗时间为35秒,二流体为氮气和水,二流体的水压为0.12Mpa,水流量为0.13L/min;S3. Flush the chip with two fluids, wherein the stage rotation speed is 1000RPM, the flushing time is 35 seconds, the second fluid is nitrogen and water, the water pressure of the second fluid is 0.12Mpa, and the water flow rate is 0.13L/min;
S4、将芯片放置在称载台上,使第二混合液朝向芯片喷淋15秒后,浸没芯片,浸泡8秒后,使用毛刷在芯片表面以扇形摆动刷洗30秒,其中第二混合液中冷脱脂剂和去离子水的体积比为冷脱脂剂:去离子水=1:12,载台的转动速度为150RPM;S4. Place the chip on the weighing platform, spray the second mixed solution towards the chip for 15 seconds, immerse the chip, soak for 8 seconds, and use a brush to brush the surface of the chip in a fan shape for 30 seconds, wherein the second mixed solution The volume ratio of intercooling degreasing agent and deionized water is cold degreasing agent: deionized water = 1:12, and the rotation speed of the stage is 150RPM;
S5、采用二流体冲洗芯片,其中载台的转动速度为1000RPM,冲洗时间为45秒,二流体为氮气和水,二流体的水压为0.1Mpa,水流量为0.12L/Min;S5. Rinse the chip with two fluids, wherein the rotation speed of the stage is 1000RPM, the flushing time is 45 seconds, the second fluid is nitrogen and water, the water pressure of the second fluid is 0.1Mpa, and the water flow rate is 0.12L/Min;
S6、采用压缩气体对芯片表面进行干燥,其中压缩气体的压力为0.1Mpa,载台的转动速度为1800RPM,干燥时间为40秒;S6. Using compressed gas to dry the surface of the chip, wherein the pressure of the compressed gas is 0.1Mpa, the rotation speed of the stage is 1800RPM, and the drying time is 40 seconds;
S7、将芯片放入烘箱中进行第二烘烤处理得到清洗后的芯片,记为样品1,其中烘箱温度为45℃,烘烤时间为1500秒。S7. Putting the chip into an oven for a second baking process to obtain a cleaned chip, denoted as
实施例2Example 2
与实施例1的区别在于,在S2步骤中,将第一混合液中冷脱脂剂和去离子水的体积比为冷脱脂剂:去离子水=1:5替换为冷脱脂剂:去离子水=1:7,其余条件与实施例1相同。The difference from Example 1 is that in step S2, the volume ratio of cold degreasing agent and deionized water in the first mixed liquid is cold degreasing agent: deionized water=1:5 replaced by cold degreasing agent: deionized water =1:7, all the other conditions are identical with
实施例3Example 3
与实施例1的区别在于,在S1步骤中,将烘箱温度为35℃,烘烤时间为1200秒替换为烘箱温度为40℃,烘烤时间为900秒,其余条件与实施例1相同。The difference from Example 1 is that in step S1, the oven temperature is 35°C and the baking time is 1200 seconds instead of the oven temperature is 40°C and the baking time is 900 seconds, and the rest of the conditions are the same as in Example 1.
对比例1Comparative example 1
与实施例1的区别在于,取消S1步骤,其余条件与实施例1相同。The difference with
对比例2Comparative example 2
与实施例1的区别在于,取消S4步骤和S5步骤,其余条件与实施例1相同。The difference from
图1为本发明一实施方式的芯片清洗方法的流程图。FIG. 1 is a flowchart of a chip cleaning method according to an embodiment of the present invention.
图2为实施例1中的清洗后的芯片的整体外观图,根据图2可知,采用本发明提供的芯片清洗方法得到芯片排列整齐,芯片完整,没有脱落损失。FIG. 2 is an overall appearance diagram of the chip after cleaning in Example 1. According to FIG. 2, it can be seen that the chip cleaning method provided by the present invention is used to obtain chips that are arranged neatly, the chips are complete, and there is no shedding loss.
图3为实施例2中的清洗后的芯片的电极区域的EDS元素分析图,表1为根据图3计算得到的清洗后的芯片的电极区域的元素组成表,根据表1可知,清洗后的芯片的电极区域除了痕量碳(C)、氧(O)元素外,主要是电极表面的金(Au)元素,说明芯片表面清洗的干净,没有残留物。Fig. 3 is the EDS elemental analysis diagram of the electrode region of the chip after cleaning in
图4为对比例1中的清洗后的芯片的整体外观图,根据图4可知,清洗过程中掉落了芯粒,说明芯粒与蓝膜之间的粘附力较差,在后续清洗过程造成了芯粒的脱落损失。Figure 4 is the overall appearance of the chip after cleaning in Comparative Example 1. According to Figure 4, the core particles fell during the cleaning process, indicating that the adhesion between the core particles and the blue film is poor. Caused the shedding loss of core particles.
图5为对比例2中的清洗后的芯片的电极区域的EDS元素分析图,表2为根据图5计算得到的清洗后的芯片的电极区域的元素组成表,根据图5和表2可知,在芯片的电极区域检测出C、O等元素含量增加,说明芯片上的有机脂类污染物增多,缺少了第二混合液清洗处理,使得冷脱脂剂没有被完全溶解和去除;此外,芯片的电极区域检测出其他微量元素,例如铝(Al)、氯(Cl)、钛(Ti)、银(Ag)等微量元素,说明芯片清洗效果不好。Fig. 5 is the EDS elemental analysis diagram of the electrode region of the chip after cleaning in Comparative Example 2, and Table 2 is the element composition table of the electrode region of the chip after cleaning calculated according to Fig. 5, according to Fig. 5 and Table 2, The increase in the content of elements such as C and O was detected in the electrode area of the chip, indicating that the organic lipid pollutants on the chip increased, and the lack of the second mixed liquid cleaning treatment made the cold degreasing agent not completely dissolved and removed; in addition, the chip’s Other trace elements detected in the electrode area, such as aluminum (Al), chlorine (Cl), titanium (Ti), silver (Ag) and other trace elements, indicate that the cleaning effect of the chip is not good.
表1Table 1
表2Table 2
综上所述,本发明提供的芯片清洗方法,不仅能够有效去除芯片表面的金属、灰尘等颗粒污染物、油脂类污染物,保证芯片表面没有清洗剂等二次污染物,而且能够保证芯粒不掉落,确保了芯片的完整性和品质,此外该清洗方法操作简单、方便,尤其适用于LED芯片的批量清洗。In summary, the chip cleaning method provided by the present invention can not only effectively remove particle pollutants such as metal and dust on the surface of the chip, and grease pollutants, ensure that there is no secondary pollutants such as cleaning agents on the surface of the chip, but also ensure that the core particle No falling off ensures the integrity and quality of the chips. In addition, the cleaning method is simple and convenient to operate, and is especially suitable for batch cleaning of LED chips.
以上,对本发明的实施方式进行了说明。但是,本发明不限定于上述实施方式。凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The embodiments of the present invention have been described above. However, the present invention is not limited to the above-mentioned embodiments. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
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