CN113540250B - Novel isolation type LDNMOS device and control circuit thereof - Google Patents
Novel isolation type LDNMOS device and control circuit thereof Download PDFInfo
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Abstract
Description
技术领域Technical Field
本发明属于电子电路领域，具体涉及一种新型隔离型LDNMOS器件及其控制电路。The invention belongs to the field of electronic circuits, and in particular relates to a novel isolated LDNMOS device and a control circuit thereof.
背景技术Background technique
对于高压LDNMOS器件，击穿性能和源漏导通电阻是非常重要的两个特性。为提高器件的击穿特性，深N阱的浓度要降低，深N阱于P型衬底的PN结深要做足够深，漏极和栅之间的STI宽度尺寸要大，以确保漏区和沟道区间的击穿和P型沟道区和P型衬底间的本体穿通条件同时满足。漏极端漂移区的电阻在整个器件的源漏导通电阻特性中占主导地位。因此，为降低器件的源漏导通电阻特性， 漏极端漂移区的掺杂浓度要提高，STI的宽度要减小。在现有技术中具有前景的研究中有中国发明授权专利CN20（101）0027309.1公开了一种隔离型LDNMOS器件，其通过采用高压深N阱和SONOS深N阱 取代单一的高压深N阱形成漂移区，使高压深N阱形成于沟道区的下方， 而SONOS深N阱形成于浅沟槽隔离场氧化层下方。这就使得器件的沟道区 下方形成的PN结很深，能够确保所述隔离型LDNMOS器件的垂直PNP本体 穿通特性。在器件的浅沟槽隔离(STI)下方的漏极端漂移区中，SONOS 深N阱和P型衬底件的形成的垂直PN结比较浅，由降低表面电场(RESURF， Reduce-Surface-Electricfield))理论可知，该较浅的PN结能帮助和 促使STI结构下方N型区域即SONOS深N阱的耗尽层的快速形成，使漏极端漂移区的电场分布平坦化，促使器件的击穿特性得以提高。同时，由于器件击穿特性的提升，使STI结构下方N型区域的掺杂浓度的提升和 STI的尺寸缩小有了改善的空间，从而导致器件的源漏导通电阻(Rdson) 特性得以改善。使高压器件的击穿特性和源漏导通电阻特性得以同时优化。现有的类似的研究中虽然在“高压器件的击穿特性和源漏导通电阻特性得以同时优化”中有一定的效果，不过实际的效果并不明显，主要原因是SONOS深N阱结构固化，所以，漏极端漂移区的电场分布平坦化不够理想。For high-voltage LDNMOS devices, breakdown performance and source-drain on-resistance are two very important characteristics. To improve the breakdown characteristics of the device, the concentration of the deep N well should be reduced, the PN junction depth of the deep N well and the P-type substrate should be deep enough, and the STI width between the drain and the gate should be large to ensure that the breakdown between the drain region and the channel region and the body punch-through conditions between the P-type channel region and the P-type substrate are met at the same time. The resistance of the drift region at the drain end dominates the source-drain on-resistance characteristics of the entire device. Therefore, in order to reduce the source-drain on-resistance characteristics of the device, the doping concentration of the drift region at the drain end should be increased and the width of the STI should be reduced. Among the research with promising prospects in the prior art, Chinese invention patent CN20 (101) 0027309.1 discloses an isolated LDNMOS device, which forms a drift region by using a high-voltage deep N well and a SONOS deep N well to replace a single high-voltage deep N well, so that the high-voltage deep N well is formed below the channel region, and the SONOS deep N well is formed below the shallow trench isolation field oxide layer. This makes the PN junction formed under the channel region of the device very deep, which can ensure the vertical PNP body punch-through characteristics of the isolated LDNMOS device. In the drain end drift region under the shallow trench isolation (STI) of the device, the vertical PN junction formed by the SONOS deep N well and the P-type substrate is relatively shallow. According to the Reduce-Surface-Electricfield (RESURF) theory, the shallower PN junction can help and promote the rapid formation of the depletion layer of the N-type region under the STI structure, that is, the SONOS deep N well, so that the electric field distribution in the drain end drift region is flattened, and the breakdown characteristics of the device are improved. At the same time, due to the improvement of the device breakdown characteristics, there is room for improvement in the increase of the doping concentration of the N-type region under the STI structure and the reduction of the size of the STI, thereby improving the source-drain on-resistance (Rdson) characteristics of the device. The breakdown characteristics and source-drain on-resistance characteristics of the high-voltage device are optimized at the same time. Although existing similar studies have achieved certain results in "simultaneous optimization of the breakdown characteristics and source-drain on-resistance characteristics of high-voltage devices", the actual effect is not obvious. The main reason is that the SONOS deep N-well structure is solidified, so the flatness of the electric field distribution in the drain extreme drift region is not ideal.
发明内容Summary of the invention
为了克服现有的技术存在的不足， 本发明提供新型隔离型LDNMOS器件及其控制电路。In order to overcome the deficiencies of the prior art, the present invention provides a novel isolated LDNMOS device and a control circuit thereof.
本发明解决其技术问题所采用的技术方案是：The technical solution adopted by the present invention to solve the technical problem is:
新型隔离型LDNMOS器件，新型隔离型LDNMOS器件，包括P型衬底（101），在P型衬底（101）上配置相互连接的高压深N阱（102）和sonos深N阱（118），所述的高压深N阱（102）与sonos深N阱（118）的外侧均配置隔离环（103），sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119），用于调整具有一个上凸出的曲线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化。A novel isolated LDNMOS device, the novel isolated LDNMOS device comprising a P-type substrate (101), a high-voltage deep N-well (102) and a sonos deep N-well (118) connected to each other are arranged on the P-type substrate (101), an isolation ring (103) is arranged on the outer sides of the high-voltage deep N-well (102) and the sonos deep N-well (118), and a well bottom boundary (119) having an upper convex curve is arranged at the bottom of the sonos deep N-well (118), which is used to adjust the electric field distribution of the sonos deep N-well (118) drain end drift region corresponding to the well bottom boundary (119) having an upper convex curve and to flatten the electric field distribution.
进一步，将所述“sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）”修改为所述的sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119），用于调整若干个凸出的锯齿线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化。Furthermore, the “the bottom of the sonos deep N well (118) is configured with a well bottom boundary (119) having a previous convex curve” is modified to the bottom of the sonos deep N well (118) is configured with a well bottom boundary (119) having a plurality of convex sawtooth lines, so as to adjust the electric field distribution of the sonos deep N well (118) drain end drift region corresponding to the plurality of convex sawtooth line well bottom boundaries (119) and flatten the electric field distribution.
进一步，所述的配置具有上一个凸出的曲线的阱底界（119），用于调整具有一个上凸出的曲线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化具体的：Furthermore, the configuration has a well bottom boundary (119) with an upper convex curve, which is used to adjust the electric field distribution of the drain end drift region of the SONOS deep N well (118) corresponding to the well bottom boundary (119) with an upper convex curve and flatten the electric field distribution. Specifically:
首先构建，漏极端漂移区的电场的理想化平坦曲线fd;First, construct an idealized flat curve fd of the electric field in the drift region at the drain end;
将在初始条件“sonos深N阱（118）底部配置直线的阱底界（119）”下实际漏极端漂移区的电场曲线表征为ft;The electric field curve of the actual drain end drift region under the initial condition "sonos deep N well (118) bottom configuration straight line well bottom boundary (119)" is characterized as ft;
计算差分曲线ft-fd=fc;Calculate the difference curve ft-fd=fc;
建立“sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）”基础上曲线的阱底界物理位置微分结构与fc的映射关系，然后设在该映射关系下凸出的曲线的阱底界（119）对应的函数为fj，fj具体以底界物理位置j1为自变量，以物理位置对应的差分曲线影响j2为因变量，j2实际指的：ft和fd确定的基础上，特定的j1对应fc的改变量；The mapping relationship between the differential structure of the well bottom boundary physical position of the curve and fc is established based on the "sonos deep N well (118) bottom configuration has a well bottom boundary (119) of the previous convex curve", and then the function corresponding to the well bottom boundary (119) of the convex curve under the mapping relationship is set to be fj, and fj specifically takes the physical position of the bottom boundary j1 as the independent variable, and takes the differential curve influence j2 corresponding to the physical position as the dependent variable, and j2 actually refers to: based on the determination of ft and fd, the specific j1 corresponds to the change amount of fc;
然后计算一个fj使得=fc。Then calculate an fj such that =fc.
进一步，所述的sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119），用于调整若干个凸出的锯齿线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化具体的：Furthermore, the bottom of the SONOS deep N well (118) is configured with a well bottom boundary (119) having a plurality of protruding sawtooth lines, which is used to adjust the electric field distribution of the drain end drift region of the SONOS deep N well (118) corresponding to the well bottom boundaries (119) of the plurality of protruding sawtooth lines and to flatten the electric field distribution. Specifically:
首先构建，漏极端漂移区的电场的理想化平坦曲线fd;First, construct an idealized flat curve fd of the electric field in the drift region at the drain end;
将在初始条件“sonos深N阱（118）底部配置直线的阱底界（119）”下实际漏极端漂移区的电场曲线表征为ft;The electric field curve of the actual drain end drift region under the initial condition "sonos deep N well (118) bottom configuration straight line well bottom boundary (119)" is characterized as ft;
计算差分曲线ft-fd=fc;Calculate the difference curve ft-fd=fc;
建立“sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119）”基础每一个凸出的锯齿线的阱底界物理位置微分结构与fc的映射关系，然后设在该映射关系下每一个凸出的锯齿线的阱底界（119）对应的函数为fnj，fnj具体以底界物理位置j1为自变量，以物理位置对应的差分曲线影响j2为因变量，j2实际指的：ft和fd确定的基础上，特定的j1对应fc的改变量；如，若干个凸出的锯齿线共有n个；The mapping relationship between the physical position differential structure of the well bottom boundary (119) of each protruding sawtooth line and fc is established based on the "sonos deep N well (118) bottom configuration with a well bottom boundary (119) having a plurality of protruding sawtooth lines". Then, the function corresponding to the well bottom boundary (119) of each protruding sawtooth line under the mapping relationship is assumed to be fnj. fnj specifically takes the physical position j1 of the bottom boundary as the independent variable and takes the differential curve influence j2 corresponding to the physical position as the dependent variable. j2 actually refers to: on the basis of ft and fd, the specific j1 corresponds to the change amount of fc; for example, there are n protruding sawtooth lines in total;
然后，同时计算n个凸出的锯齿线对应的n个fnj，使得。Then, the n fnj corresponding to the n protruding sawtooth lines are calculated simultaneously, so that .
进一步，所述的隔离环（103）包括低压P阱（105），所述的低压P阱（105）通过p＋欧姆接触引出，所述的高压深N阱（102）与隔离环（103）接触位置配置隔离浅沟槽（106），所述的高压深N阱（102）与sonos深N阱（118）连接处远离sonos深N阱（118）一侧设置高压P阱（104）。Furthermore, the isolation ring (103) includes a low voltage P well (105), the low voltage P well (105) is led out through a p+ ohmic contact, an isolation shallow trench (106) is configured at the contact position between the high voltage deep N well (102) and the isolation ring (103), and a high voltage P well (104) is configured at the connection between the high voltage deep N well (102) and the sonos deep N well (118) on the side away from the sonos deep N well (118).
进一步，所述的高压P阱（104）远离sonos深N阱（118）一侧的高压深N阱（102）内设置一左低压N阱（116），该左低压N阱（116）通过n＋欧姆接触引出，左低压N阱（116）与高压P阱（104）之间配置隔离浅沟槽（106），所述的高压P阱（104）中部设置隔离浅沟槽（106），所述的高压P阱（104）中部的隔离浅沟槽（106）靠近sonos深N阱（118）一侧设置源极（107），所述的高压P阱（104）中部的隔离浅沟槽（106）远离sonos深N阱（118）一侧设置沟道电极（110），所述的沟道电极（110）设置在两个隔离浅沟槽（106）之间，所述的sonos深N阱（118）与高压深N阱（102）连接的一侧设置隔离浅沟槽（106），所述的sonos深N阱（118）靠近外侧隔离环（103）的一侧设置隔离浅沟槽（106），所述的sonos深N阱（118）的两个隔离浅沟槽（106）之间设置右低压N阱（117），所述的右低压N阱（117）通过漏极（109）引出。Furthermore, a left low-voltage N-well (116) is arranged in the high-voltage deep N-well (102) on the side of the high-voltage P-well (104) away from the sonos deep N-well (118), and the left low-voltage N-well (116) is led out through an n+ ohmic contact, and an isolation shallow trench (106) is arranged between the left low-voltage N-well (116) and the high-voltage P-well (104), and an isolation shallow trench (106) is arranged in the middle of the high-voltage P-well (104), and a source (107) is arranged in the isolation shallow trench (106) in the middle of the high-voltage P-well (104) close to the sonos deep N-well (118), and the isolation shallow trench (106) in the middle of the high-voltage P-well (104) is arranged. 6) A channel electrode (110) is arranged on a side away from the sonos deep N well (118), and the channel electrode (110) is arranged between two isolation shallow trenches (106). An isolation shallow trench (106) is arranged on the side where the sonos deep N well (118) is connected to the high-voltage deep N well (102). An isolation shallow trench (106) is arranged on the side of the sonos deep N well (118) close to the outer isolation ring (103). A right low-voltage N well (117) is arranged between the two isolation shallow trenches (106) of the sonos deep N well (118), and the right low-voltage N well (117) is led out through the drain (109).
进一步，所述的源极（107）到sonos深N阱（118）内的隔离浅沟槽（106）上部设置多晶硅栅（108）。Furthermore, a polysilicon gate (108) is provided on the upper portion of the isolation shallow trench (106) from the source (107) to the sonos deep N well (118).
新型隔离型LDNMOS器件的控制电路， 包括在sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）基础上，在曲线的阱底界物理位置微分结构中形成的多个从P型衬底（101）到sonos深N阱（118）的微控制电路，所述的多个微控制电路共同调整漏极端漂移区的电场分布。A control circuit for a novel isolated LDNMOS device includes a plurality of micro-control circuits from a P-type substrate (101) to a sonos deep N-well (118) formed in a physical position differential structure of the well bottom boundary of the curve, based on a well bottom boundary (119) having a protruding curve at the bottom of a sonos deep N-well (118), wherein the plurality of micro-control circuits jointly adjust the electric field distribution of a drain end drift region.
进一步，还包括在sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119）基础上，在锯齿线的阱底界物理位置微分结构中形成的多个从P型衬底（101）到sonos深N阱（118）的微控制电路，所述的多个微控制电路共同调整漏极端漂移区的电场分布。Furthermore, the invention also includes a plurality of micro-control circuits from the P-type substrate (101) to the Sonos deep N well (118) formed in a physical position differential structure of the well bottom boundary of the sawtooth line on the basis of configuring a well bottom boundary (119) having a plurality of protruding sawtooth lines at the bottom of the Sonos deep N well (118), wherein the plurality of micro-control circuits jointly adjust the electric field distribution of the drain end drift region.
有益效果Beneficial Effects
本申请可以在sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119），可以调整具有一个上凸出的曲线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化，或者在sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119），可以调整若干个凸出的锯齿线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化；本申请不仅使得高压器件的击穿特性和源漏导通电阻特性得以同时优化，还可以使得漏极端漂移区的电场分布平坦化达到理想目的。The present application can configure a well bottom boundary (119) with an upper convex curve at the bottom of the sonos deep N well (118), and can adjust the electric field distribution of the sonos deep N well (118) drain end drift region corresponding to the well bottom boundary (119) with an upper convex curve and make the electric field distribution flat, or configure a well bottom boundary (119) with a plurality of convex sawtooth lines at the bottom of the sonos deep N well (118), and can adjust the electric field distribution of the sonos deep N well (118) drain end drift region corresponding to the well bottom boundaries (119) with a plurality of convex sawtooth lines and make the electric field distribution flat; the present application not only optimizes the breakdown characteristics and source-drain on-resistance characteristics of the high-voltage device at the same time, but also makes the electric field distribution of the drain end drift region flat to achieve the ideal purpose.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1是新型隔离型LDNMOS器件的截面结构示意图；FIG1 is a schematic diagram of a cross-sectional structure of a novel isolated LDNMOS device;
图2是新型隔离型LDNMOS器件的有若干个凸出的锯齿线的阱底界截面结构示意图。FIG. 2 is a schematic diagram of a cross-sectional structure of a well bottom boundary of a novel isolation type LDNMOS device having several protruding sawtooth lines.
具体实施方式Detailed ways
如图1所示的，本申请新型隔离型LDNMOS器件在具体实施中包括P型衬底（101），在P型衬底（101）上配置相互连接的高压深N阱（102）和sonos深N阱（118），所述的高压深N阱（102）与sonos深N阱（118）的外侧均配置隔离环（103），sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119），用于调整具有一个上凸出的曲线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化；sonos深N阱（118）结构使得高压器件的击穿特性和源漏导通电阻特性得以同时优化，sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）在保留sonos深N阱（118）同时还可以使得漏极端漂移区的电场分布平坦化达到理想目的。As shown in FIG. 1 , the novel isolated LDNMOS device of the present application comprises a P-type substrate (101) in a specific implementation, and a high-voltage deep N-well (102) and a sonos deep N-well (118) connected to each other are configured on the P-type substrate (101), and isolation rings (103) are configured on the outer sides of the high-voltage deep N-well (102) and the sonos deep N-well (118), and a well bottom boundary (119) having an upper convex curve is configured at the bottom of the sonos deep N-well (118) for adjusting the well bottom boundary (119) having an upper convex curve. The well bottom boundary (119) with the curve protruding out of the well bottom boundary (119) corresponds to the electric field distribution of the drift region at the drain end of the sonos deep N well (118) and makes the electric field distribution flat; the sonos deep N well (118) structure enables the breakdown characteristics and source-drain on-resistance characteristics of the high-voltage device to be optimized simultaneously, and the bottom of the sonos deep N well (118) is configured with a well bottom boundary (119) with a previous convex curve, which can retain the sonos deep N well (118) while also making the electric field distribution of the drift region at the drain end flat to achieve the ideal purpose.
在更加具体实施中，所述的配置具有上一个凸出的曲线的阱底界（119），用于调整具有一个上凸出的曲线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化具体的：In a more specific implementation, the configuration has a well bottom boundary (119) with an upper convex curve, which is used to adjust the electric field distribution of the drain end drift region of the sonos deep N well (118) corresponding to the well bottom boundary (119) with an upper convex curve and flatten the electric field distribution. Specifically:
首先构建，漏极端漂移区的电场的理想化平坦曲线fd;First, construct an idealized flat curve fd of the electric field in the drift region at the drain end;
将在初始条件“sonos深N阱（118）底部配置直线的阱底界（119）”下实际漏极端漂移区的电场曲线表征为ft;The electric field curve of the actual drain end drift region under the initial condition "sonos deep N well (118) bottom configuration straight line well bottom boundary (119)" is characterized as ft;
计算差分曲线ft-fd=fc;Calculate the difference curve ft-fd=fc;
建立“sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）”基础上曲线的阱底界物理位置微分结构与fc的映射关系，然后设在该映射关系下凸出的曲线的阱底界（119）对应的函数为fj，fj具体以底界物理位置j1为自变量，以物理位置对应的差分曲线影响j2为因变量，j2实际指的：ft和fd确定的基础上，特定的j1对应fc的改变量；The mapping relationship between the differential structure of the well bottom boundary physical position of the curve and fc is established based on the "sonos deep N well (118) bottom configuration has a well bottom boundary (119) of the previous convex curve", and then the function corresponding to the well bottom boundary (119) of the convex curve under the mapping relationship is set to be fj, and fj specifically takes the physical position of the bottom boundary j1 as the independent variable, and takes the differential curve influence j2 corresponding to the physical position as the dependent variable, and j2 actually refers to: based on the determination of ft and fd, the specific j1 corresponds to the change amount of fc;
然后计算一个fj使得=fc;实施中通过满足使得=fc就可以实现凸出的曲线的阱底界（119）对应的物理位置微分结构对fc的改变影响并且使得实际漏极端漂移区的电场曲线等于漏极端漂移区的电场的理想化平坦曲线，这样可以获取理想的漏极端漂移区的电场曲线，以使得漏极端漂移区的电场分布平坦化达到理想目的。Then calculate an fj such that =fc;In implementation, by satisfying =fc can realize the influence of the physical position differential structure corresponding to the well bottom boundary (119) of the convex curve on the change of fc and make the actual electric field curve of the drain end drift region equal to the idealized flat curve of the electric field of the drain end drift region, so that the ideal electric field curve of the drain end drift region can be obtained, so as to flatten the electric field distribution in the drain end drift region to achieve the ideal purpose.
在其他的实施中，新型隔离型LDNMOS器件，包括P型衬底（101），在P型衬底（101）上配置相互连接的高压深N阱（102）和sonos深N阱（118），所述的高压深N阱（102）与sonos深N阱（118）的外侧均配置隔离环（103），如图2所示的，所述的sonos深N阱（118）底部配置具有若干个凸出的锯齿线（111）的阱底界（119），用于调整若干个凸出的锯齿线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化；sonos深N阱（118）结构使得高压器件的击穿特性和源漏导通电阻特性得以同时优化，sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119）在保留sonos深N阱（118）同时还可以使得漏极端漂移区的电场分布平坦化达到理想目的。并且相对于上述的“sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界11”，本实施例中的阱底界11调整更加的灵活，并且具有实施中不论一个凸出的曲线的阱底界11还是配置具有若干个凸出的锯齿线的阱底界（119）均可以在悉知的掺杂工艺中进行，并不会增加工艺的难度和成本。In other implementations, a novel isolated LDNMOS device includes a P-type substrate (101), a high-voltage deep N-well (102) and a sonos deep N-well (118) connected to each other are configured on the P-type substrate (101), and isolation rings (103) are configured on the outer sides of the high-voltage deep N-well (102) and the sonos deep N-well (118), as shown in FIG. 2, and a well bottom boundary (119) having a plurality of protruding sawtooth lines (111) is configured at the bottom of the sonos deep N-well (118) for adjusting the The electric field distribution of the Sonos deep N well (118) drain end drift region corresponding to the well bottom boundary (119) with several protruding sawtooth lines is flattened; the Sonos deep N well (118) structure optimizes the breakdown characteristics and source-drain on-resistance characteristics of the high-voltage device at the same time, and the Sonos deep N well (118) is configured with a well bottom boundary (119) with several protruding sawtooth lines at the bottom, which can flatten the electric field distribution of the drain end drift region while retaining the Sonos deep N well (118) and achieving the ideal purpose. And compared with the above-mentioned "the Sonos deep N well (118) is configured with a well bottom boundary 11 with a previous protruding curve at the bottom", the well bottom boundary 11 in this embodiment is more flexible to adjust, and in the implementation, whether it is a well bottom boundary 11 with a protruding curve or a well bottom boundary (119) with several protruding sawtooth lines, it can be carried out in a well-known doping process, and will not increase the difficulty and cost of the process.
在更加具体实施中，所述的sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119），用于调整若干个凸出的锯齿线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化具体的：In a more specific implementation, the bottom of the sonos deep N well (118) is configured with a well bottom boundary (119) having a plurality of protruding sawtooth lines, which is used to adjust the electric field distribution of the Sonos deep N well (118) drain end drift region corresponding to the well bottom boundaries (119) of the plurality of protruding sawtooth lines and to flatten the electric field distribution. Specifically:
首先构建，漏极端漂移区的电场的理想化平坦曲线fd;First, construct an idealized flat curve fd of the electric field in the drift region at the drain end;
将在初始条件“sonos深N阱（118）底部配置直线的阱底界（119）”下实际漏极端漂移区的电场曲线表征为ft;The electric field curve of the actual drain end drift region under the initial condition "sonos deep N well (118) bottom configuration straight line well bottom boundary (119)" is characterized as ft;
计算差分曲线ft-fd=fc;Calculate the difference curve ft-fd=fc;
建立“sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119）”基础每一个凸出的锯齿线的阱底界物理位置微分结构与fc的映射关系，然后设在该映射关系下每一个凸出的锯齿线的阱底界（119）对应的函数为fnj，fnj具体以底界物理位置j1为自变量，以物理位置对应的差分曲线影响j2为因变量，j2实际指的：ft和fd确定的基础上，特定的j1对应fc的改变量；如，若干个凸出的锯齿线共有n个；The mapping relationship between the physical position differential structure of the well bottom boundary (119) of each protruding sawtooth line and fc is established based on the "sonos deep N well (118) bottom configuration with a well bottom boundary (119) having a plurality of protruding sawtooth lines". Then, the function corresponding to the well bottom boundary (119) of each protruding sawtooth line under the mapping relationship is assumed to be fnj. fnj specifically takes the physical position j1 of the bottom boundary as the independent variable and takes the differential curve influence j2 corresponding to the physical position as the dependent variable. j2 actually refers to: on the basis of ft and fd, the specific j1 corresponds to the change amount of fc; for example, there are n protruding sawtooth lines in total;
然后，同时计算n个凸出的锯齿线对应的n个fnj，使得 Then, the n fnj corresponding to the n protruding sawtooth lines are calculated simultaneously, so that
进一步实施中，所述的隔离环（103）包括低压P阱（105），所述的低压P阱（105）通过p＋欧姆接触引出，所述的高压深N阱（102）与隔离环（103）接触位置配置隔离浅沟槽（106），所述的高压深N阱（102）与sonos深N阱（118）连接处远离sonos深N阱（118）一侧设置高压P阱（104）。In a further implementation, the isolation ring (103) includes a low-voltage P-well (105), the low-voltage P-well (105) is led out through a p+ ohmic contact, an isolation shallow trench (106) is configured at the contact position between the high-voltage deep N-well (102) and the isolation ring (103), and a high-voltage P-well (104) is configured at the connection between the high-voltage deep N-well (102) and the sonos deep N-well (118) on the side away from the sonos deep N-well (118).
进一步实施中，所述的高压P阱（104）远离sonos深N阱（118）一侧的高压深N阱（102）内设置一左低压N阱（116），该左低压N阱（116）通过n＋欧姆接触引出，左低压N阱（116）与高压P阱（104）之间配置隔离浅沟槽（106），所述的高压P阱（104）中部设置隔离浅沟槽（106），所述的高压P阱（104）中部的隔离浅沟槽（106）靠近sonos深N阱（118）一侧设置源极（107），所述的高压P阱（104）中部的隔离浅沟槽（106）远离sonos深N阱（118）一侧设置沟道电极（110），所述的沟道电极（110）设置在两个隔离浅沟槽（106）之间，所述的sonos深N阱（118）与高压深N阱（102）连接的一侧设置隔离浅沟槽（106），所述的sonos深N阱（118）靠近外侧隔离环（103）的一侧设置隔离浅沟槽（106），所述的sonos深N阱（118）的两个隔离浅沟槽（106）之间设置右低压N阱（117），所述的右低压N阱（117）通过漏极（109）引出。进一步实施中，所述的源极（107）到sonos深N阱（118）内的隔离浅沟槽（106）上部设置多晶硅栅（108）。In a further implementation, a left low-voltage N-well (116) is arranged in the high-voltage deep N-well (102) on the side of the high-voltage P-well (104) away from the sonos deep N-well (118), the left low-voltage N-well (116) is led out through an n+ ohmic contact, an isolation shallow trench (106) is arranged between the left low-voltage N-well (116) and the high-voltage P-well (104), an isolation shallow trench (106) is arranged in the middle of the high-voltage P-well (104), a source (107) is arranged in the isolation shallow trench (106) in the middle of the high-voltage P-well (104) close to the sonos deep N-well (118), and the isolation shallow trench (106) in the middle of the high-voltage P-well (104) is arranged 06) A channel electrode (110) is arranged on a side away from the sonos deep N well (118), and the channel electrode (110) is arranged between two isolation shallow trenches (106). An isolation shallow trench (106) is arranged on the side where the sonos deep N well (118) is connected to the high-voltage deep N well (102). An isolation shallow trench (106) is arranged on the side of the sonos deep N well (118) close to the outer isolation ring (103). A right low-voltage N well (117) is arranged between the two isolation shallow trenches (106) of the sonos deep N well (118), and the right low-voltage N well (117) is led out through the drain (109). In further implementation, a polysilicon gate (108) is arranged on the upper part of the isolation shallow trench (106) from the source (107) to the sonos deep N well (118).
在一个综合的实施中，本申请新型隔离型LDNMOS器件包括P型衬底（101），在P型衬底（101）上配置相互连接的高压深N阱（102）和sonos深N阱（118），所述的高压深N阱（102）与sonos深N阱（118）的外侧均配置隔离环（103），sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119），用于调整具有一个上凸出的曲线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化；所述的隔离环（103）包括低压P阱（105），所述的低压P阱（105）通过p＋欧姆接触引出，所述的高压深N阱（102）与隔离环（103）接触位置配置隔离浅沟槽（106），所述的高压深N阱（102）与sonos深N阱（118）连接处远离sonos深N阱（118）一侧设置高压P阱（104）;所述的高压P阱（104）远离sonos深N阱（118）一侧的高压深N阱（102）内设置一左低压N阱（116），该左低压N阱（116）通过n＋欧姆接触引出，左低压N阱（116）与高压P阱（104）之间配置隔离浅沟槽（106），所述的高压P阱（104）中部设置隔离浅沟槽（106），所述的高压P阱（104）中部的隔离浅沟槽（106）靠近sonos深N阱（118）一侧设置源极（107），所述的高压P阱（104）中部的隔离浅沟槽（106）远离sonos深N阱（118）一侧设置沟道电极（110），所述的沟道电极（110）设置在两个隔离浅沟槽（106）之间，所述的sonos深N阱（118）与高压深N阱（102）连接的一侧设置隔离浅沟槽（106），所述的sonos深N阱（118）靠近外侧隔离环（103）的一侧设置隔离浅沟槽（106），所述的sonos深N阱（118）的两个隔离浅沟槽（106）之间设置右低压N阱（117），所述的右低压N阱（117）通过漏极（109）引出;所述的源极（107）到sonos深N阱（118）内的隔离浅沟槽（106）上部设置多晶硅栅（108）;所述的配置具有上一个凸出的曲线的阱底界（119），用于调整具有一个上凸出的曲线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化具体的：In a comprehensive implementation, the novel isolated LDNMOS device of the present application comprises a P-type substrate (101), on which a high-voltage deep N-well (102) and a sonos deep N-well (118) connected to each other are arranged, and an isolation ring (103) is arranged on the outer sides of the high-voltage deep N-well (102) and the sonos deep N-well (118), and a well bottom boundary (119) having an upper convex curve is arranged at the bottom of the sonos deep N-well (118), which is used to adjust the electric field distribution of the sonos deep N-well (118) drain end drift region corresponding to the well bottom boundary (119) having an upper convex curve and flatten the electric field distribution; the isolation ring (103) comprises A low voltage P well (105), the low voltage P well (105) is led out through a p+ ohmic contact, an isolation shallow trench (106) is configured at the contact position between the high voltage deep N well (102) and the isolation ring (103), a high voltage P well (104) is configured at the connection point between the high voltage deep N well (102) and the sonos deep N well (118) away from the sonos deep N well (118); a left low voltage N well (116) is configured in the high voltage deep N well (102) away from the sonos deep N well (118), the left low voltage N well (116) is led out through an n+ ohmic contact, and an isolation is configured between the left low voltage N well (116) and the high voltage P well (104). A shallow trench (106) is provided in the middle of the high-voltage P-well (104), a source (107) is provided on the side of the isolation shallow trench (106) in the middle of the high-voltage P-well (104) close to the sonos deep N-well (118), a channel electrode (110) is provided on the side of the isolation shallow trench (106) in the middle of the high-voltage P-well (104) away from the sonos deep N-well (118), and the channel electrode (110) is provided between the two isolation shallow trenches (106), an isolation shallow trench (106) is provided on the side where the sonos deep N-well (118) is connected to the high-voltage deep N-well (102), and the sonos deep N-well (118) is close to the source electrode (107). An isolation shallow trench (106) is arranged on one side near the outer isolation ring (103); a right low-voltage N well (117) is arranged between the two isolation shallow trenches (106) of the sonos deep N well (118); the right low-voltage N well (117) is led out through the drain (109); a polysilicon gate (108) is arranged on the upper part of the isolation shallow trench (106) from the source (107) to the sonos deep N well (118); the configuration has a well bottom boundary (119) with an upper convex curve, which is used to adjust the electric field distribution of the sonos deep N well (118) drain end drift region corresponding to the well bottom boundary (119) with an upper convex curve and make the electric field distribution flat. Specifically:
首先构建，漏极端漂移区的电场的理想化平坦曲线fd;First, construct an idealized flat curve fd of the electric field in the drift region at the drain end;
将在初始条件“sonos深N阱（118）底部配置直线的阱底界（119）”下实际漏极端漂移区的电场曲线表征为ft;The electric field curve of the actual drain end drift region under the initial condition "sonos deep N well (118) bottom configuration straight line well bottom boundary (119)" is characterized as ft;
计算差分曲线ft-fd=fc;Calculate the difference curve ft-fd=fc;
建立“sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）”基础上曲线的阱底界物理位置微分结构与fc的映射关系，然后设在该映射关系下凸出的曲线的阱底界（119）对应的函数为fj，fj具体以底界物理位置j1为自变量，以物理位置对应的差分曲线影响j2为因变量，j2实际指的：ft和fd确定的基础上，特定的j1对应fc的改变量；The mapping relationship between the differential structure of the well bottom boundary physical position of the curve and fc is established based on the "sonos deep N well (118) bottom configuration has a well bottom boundary (119) of the previous convex curve", and then the function corresponding to the well bottom boundary (119) of the convex curve under the mapping relationship is set to be fj, and fj specifically takes the physical position of the bottom boundary j1 as the independent variable, and takes the differential curve influence j2 corresponding to the physical position as the dependent variable, and j2 actually refers to: based on the determination of ft and fd, the specific j1 corresponds to the change amount of fc;
然后计算一个fj使得=fc。Then calculate an fj such that =fc.
或者，将所述“sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）”修改为所述的sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119），用于调整若干个凸出的锯齿线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化；所述的sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119），用于调整若干个凸出的锯齿线的阱底界（119）对应的sonos深N阱（118）漏极端漂移区的电场分布并使得电场分布平坦化具体的：Alternatively, the “sonos deep N-well (118) bottom is configured with a well bottom boundary (119) having a previous convex curve” is modified to the sonos deep N-well (118) bottom is configured with a well bottom boundary (119) having a plurality of convex sawtooth lines, which is used to adjust the electric field distribution of the sonos deep N-well (118) drain end drift region corresponding to the well bottom boundaries (119) having a plurality of convex sawtooth lines and flatten the electric field distribution; the sonos deep N-well (118) bottom is configured with a well bottom boundary (119) having a plurality of convex sawtooth lines, which is used to adjust the electric field distribution of the sonos deep N-well (118) drain end drift region corresponding to the well bottom boundaries (119) having a plurality of convex sawtooth lines and flatten the electric field distribution. Specifically:
首先构建，漏极端漂移区的电场的理想化平坦曲线fd;First, construct an idealized flat curve fd of the electric field in the drift region at the drain end;
将在初始条件“sonos深N阱（118）底部配置直线的阱底界（119）”下实际漏极端漂移区的电场曲线表征为ft;The electric field curve of the actual drain end drift region under the initial condition "sonos deep N well (118) bottom configuration straight line well bottom boundary (119)" is characterized as ft;
计算差分曲线ft-fd=fc;Calculate the difference curve ft-fd=fc;
建立“sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119）”基础每一个凸出的锯齿线的阱底界物理位置微分结构与fc的映射关系，然后设在该映射关系下每一个凸出的锯齿线的阱底界（119）对应的函数为fnj，fnj具体以底界物理位置j1为自变量，以物理位置对应的差分曲线影响j2为因变量，j2实际指的：ft和fd确定的基础上，特定的j1对应fc的改变量；如，若干个凸出的锯齿线共有n个；The mapping relationship between the physical position differential structure of the well bottom boundary (119) of each protruding sawtooth line and fc is established based on the "sonos deep N well (118) bottom configuration with a well bottom boundary (119) having a plurality of protruding sawtooth lines". Then, the function corresponding to the well bottom boundary (119) of each protruding sawtooth line under the mapping relationship is assumed to be fnj. fnj specifically takes the physical position j1 of the bottom boundary as the independent variable and takes the differential curve influence j2 corresponding to the physical position as the dependent variable. j2 actually refers to: on the basis of ft and fd, the specific j1 corresponds to the change amount of fc; for example, there are n protruding sawtooth lines in total;
然后，同时计算n个凸出的锯齿线对应的n个fnj，使得 Then, the n fnj corresponding to the n protruding sawtooth lines are calculated simultaneously, so that
本申请的新型隔离型LDNMOS器件的控制电路，包括在sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）基础上，在曲线的阱底界物理位置微分结构中形成的多个从P型衬底（101）到sonos深N阱（118）的微控制电路，所述的多个微控制电路共同调整漏极端漂移区的电场分布，并使得电场分布平坦化。The control circuit of the novel isolated LDNMOS device of the present application includes a plurality of micro-control circuits from a P-type substrate (101) to the sonos deep N-well (118) formed in a physical position differential structure of the well bottom boundary of the curve on the basis of a well bottom boundary (119) having a protruding curve at the bottom of the sonos deep N-well (118). The plurality of micro-control circuits jointly adjust the electric field distribution of the drain end drift region and flatten the electric field distribution.
首先构建，漏极端漂移区的电场的理想化平坦曲线fd;First, construct an idealized flat curve fd of the electric field in the drift region at the drain end;
将在初始条件“sonos深N阱（118）底部配置直线的阱底界（119）”下实际漏极端漂移区的电场曲线表征为ft;The electric field curve of the actual drain end drift region under the initial condition "sonos deep N well (118) bottom configuration straight line well bottom boundary (119)" is characterized as ft;
计算差分曲线ft-fd=fc;Calculate the difference curve ft-fd=fc;
建立“sonos深N阱（118）底部配置具有上一个凸出的曲线的阱底界（119）”基础上曲线的阱底界物理位置微分结构与fc的映射关系，然后设在该映射关系下凸出的曲线的阱底界（119）对应的函数为fj，fj具体以底界物理位置j1为自变量，以物理位置对应的差分曲线影响j2为因变量，j2实际指的：ft和fd确定的基础上，特定的j1对应fc的改变量；The mapping relationship between the differential structure of the well bottom boundary physical position of the curve and fc is established based on the "sonos deep N well (118) bottom configuration has a well bottom boundary (119) of the previous convex curve", and then the function corresponding to the well bottom boundary (119) of the convex curve under the mapping relationship is set to be fj, and fj specifically takes the physical position of the bottom boundary j1 as the independent variable, and takes the differential curve influence j2 corresponding to the physical position as the dependent variable, and j2 actually refers to: based on the determination of ft and fd, the specific j1 corresponds to the change amount of fc;
然后计算一个fj使得=fc。Then calculate an fj such that =fc.
相应的其他实施例中，新型隔离型LDNMOS器件的控制电路还包括在sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119）基础上，在锯齿线的阱底界物理位置微分结构中形成的多个从P型衬底（101）到sonos深N阱（118）的微控制电路，所述的多个微控制电路共同调整漏极端漂移区的电场分布，并使得电场分布平坦化。In other corresponding embodiments, the control circuit of the novel isolated LDNMOS device further includes a plurality of micro-control circuits from the P-type substrate (101) to the sonos deep N-well (118) formed in the physical position differential structure of the well bottom boundary of the sawtooth line on the basis of configuring a well bottom boundary (119) having a plurality of protruding sawtooth lines at the bottom of the sonos deep N-well (118), wherein the plurality of micro-control circuits jointly adjust the electric field distribution in the drain end drift region and flatten the electric field distribution.
首先构建，漏极端漂移区的电场的理想化平坦曲线fd;First, construct an idealized flat curve fd of the electric field in the drift region at the drain end;
将在初始条件“sonos深N阱（118）底部配置直线的阱底界（119）”下实际漏极端漂移区的电场曲线表征为ft;The electric field curve of the actual drain end drift region under the initial condition "sonos deep N well (118) bottom configuration straight line well bottom boundary (119)" is characterized as ft;
计算差分曲线ft-fd=fc;Calculate the difference curve ft-fd=fc;
建立“sonos深N阱（118）底部配置具有若干个凸出的锯齿线的阱底界（119）”基础每一个凸出的锯齿线的阱底界物理位置微分结构与fc的映射关系，然后设在该映射关系下每一个凸出的锯齿线的阱底界（119）对应的函数为fnj，fnj具体以底界物理位置j1为自变量，以物理位置对应的差分曲线影响j2为因变量，j2实际指的：ft和fd确定的基础上，特定的j1对应fc的改变量；如，若干个凸出的锯齿线共有n个；The mapping relationship between the physical position differential structure of the well bottom boundary (119) of each protruding sawtooth line and fc is established based on the "sonos deep N well (118) bottom configuration with a well bottom boundary (119) having a plurality of protruding sawtooth lines". Then, the function corresponding to the well bottom boundary (119) of each protruding sawtooth line under the mapping relationship is assumed to be fnj. fnj specifically takes the physical position j1 of the bottom boundary as the independent variable and takes the differential curve influence j2 corresponding to the physical position as the dependent variable. j2 actually refers to: on the basis of ft and fd, the specific j1 corresponds to the change amount of fc; for example, there are n protruding sawtooth lines in total;
然后，同时计算n个凸出的锯齿线对应的n个fnj，使得，由技术常识可知，本发明可以通过其它的不脱离其精神实质或必要特征的实施方案来实现。上述公开的实施方案，就各方面而言，都只是举例说明，并不是仅有的。所有在本发明范围内或在等同于本发明的范围内的改变均被本发明包含。Then, the n fnj corresponding to the n protruding sawtooth lines are calculated simultaneously, so that It is known from common technical knowledge that the present invention can be implemented by other embodiments that do not deviate from its spirit or essential features. The above disclosed embodiments are only illustrative in all respects and are not exclusive. All changes within the scope of the present invention or within the scope equivalent to the present invention are included in the present invention.
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