Disclosure of Invention
The invention aims to solve the technical problem of providing the ultrahigh-speed deposition method of the high-bonding-force and ultra-thick DLC coating on the surface of the piston ring, which has simple process, stability and easy industrial production.
In order to solve the problems, the ultrahigh-speed deposition method of the high-bonding-force super-thick DLC coating on the surface of the piston ring, disclosed by the invention, comprises the following steps of:
the method comprises the steps of performing piston ring clamping after degreasing and cleaning of a piston ring; placing the clamped piston ring on a sample table in a vacuum chamber of a plasma enhanced chemical vapor deposition device, then placing a coaxial auxiliary cathode on the periphery of the clamped piston ring and the sample table, connecting the auxiliary cathode with the negative electrode of a direct current pulse power supply, and hermetically vacuumizing to 1.5 multiplied by 10-3 Pa;
Argon is introduced between the auxiliary cathode and the piston ring through an air inlet on the sample table, then negative pulse bias is applied to the auxiliary cathode, and oxide removal cleaning and activation are carried out on the surface of the piston ring;
thirdly, introducing mixed gas of argon and silane, and depositing by adopting a plasma immersion injection mode to obtain a gradient silicon supporting layer with the thickness of 50-1000 nm;
fourthly, keeping the flow velocity same as that of the argon and the silane in the step three, and gradually increasing the flow of acetylene gas to deposit to obtain a gradient silicon-doped DLC transition layer with the thickness of 1-4 mu m;
fifthly, keeping the flow velocity same as that of argon and silane in the step three, periodically and alternately depositing on the surface of the piston ring by periodically and alternately adjusting the flow of acetylene to obtain a multilayer silicon-doped DLC functional layer with the total thickness of 8-35 mu m, naturally cooling, removing vacuum, and taking out the piston ring.
The piston ring is made of one of cast iron, stainless steel and nitrided stainless steel.
The distance between a piston ring and the auxiliary cathode in the step is 60-200 mm.
The piston rings in the step are one group or a plurality of groups.
The method is characterized in that the cleaning conditions in the step II include that argon flow is 100-400 sccm, vacuum degree is 1-3 Pa, negative bias is 5-10 kV, pulse frequency is 1-2 kHz, and continuous cleaning time is 20-60 min.
The deposition condition of the gradient silicon support layer in the step three is that argon gas flow is 100-400 sccm, silane gas flow is 10-100 sccm, vacuum degree is 10-20 Pa, negative bias variation range is 10-20 kV, pulse frequency is 1-2 kHz, negative bias is changed every 2-10 min, and deposition time is 20-60 min.
The deposition condition of the gradient silicon-doped DLC transition layer in the step four is that the flow of argon is 100-400 sccm, the flow of silane is 10-100 sccm, the flow of acetylene is 0-300 sccm, the vacuum degree is 2-6 Pa, the negative bias is 0.5-1.2 kV, the pulse frequency is 0.1-2 kHz, the flow of acetylene is changed once every 5-20 min, and the deposition time is 30-120 min.
The deposition conditions of the multilayer silicon-doped DLC functional layer in the step are that the flow of argon is 100-400 sccm, the flow of silane is 10-100 sccm, the flow of acetylene is 0-300 sccm, the vacuum degree is 2-6 Pa, the negative bias is 0.5-1.5 kV, the pulse frequency is 0.1-2 kHz, the flow of acetylene is changed once every 1.5-20 min, and the total deposition time is 60-480 min.
The deposition rate in the step three-step fifthly is 70-120 nm/min.
Compared with the prior art, the invention has the following advantages:
1. the invention adds a coaxial auxiliary cathode at the periphery of the piston ring, introduces precursor gas and applies negative bias to form hollow cathode effect between the piston ring and the auxiliary cathode, thereby generating high-density plasma to realize ultra-high-speed deposition of DLC coating.
2. The invention is introduced with argon gas, applies negative pulse bias voltage to the auxiliary cathode, and utilizes the generated argon plasma to remove oxide on the surface of the piston ring for cleaning and activating so as to improve the interface state of the piston ring and enhance the bonding force between the diamond-like coating and the surface of the piston ring.
3. According to the invention, mixed gas of argon and silane is introduced, a high-voltage direct-current pulse power supply is used for applying negative pulse bias to the auxiliary cathode to generate high-energy plasma, the bonding strength of the DLC coating and the interface of a piston ring is improved by changing the silicon supporting layer with negative bias deposition gradient hardness, and the film-substrate bonding force is improved.
4. The invention realizes the transition from the pure silicon supporting layer to the silicon-doped DLC functional layer by keeping the flow rates of argon and silane constant and gradually increasing the flow rate of acetylene gas so as to enhance the combination.
5. The method adopts the hollow cathode effect, adopts a low-voltage and low-current plasma discharge mode, directly ionizes the precursor gas at a lower temperature, and deposits the precursor gas on the surface of a piston ring at an ultrahigh speed, the furnace finishing time of depositing the ultra-thick DLC coating with the thickness of more than 30 mu m only needs about 6.5 hours, and the deposition efficiency is improved by more than 4 times on the original basis; in addition, a plurality of groups of piston ring samples can be clamped at one time, so that the one-time large-batch preparation of the ultra-thick DLC coating on the surface of the piston ring is realized, and the method is suitable for batch production.
6. The piston ring with the super-thick DLC coating coated on the surface, which is prepared by the invention, has the thickness of more than 30 mu m, uniform and compact alternative multilayer structure of the coating section, smooth surface and no microscopic defect.
7. The piston ring coated with the ultra-thick DLC coating on the surface has excellent film-substrate binding force, and the Lc1 is about 45-55N, and the Lc2 is about more than 60N. The bonding force of the Si transition layer is higher than that of the Cr transition layer (20-35N) and the nitriding treatment (35-40) by about 10N (Chinese patent CN 108359938).
8. The super-thick DLC coating deposited by the method has excellent mechanical properties, the microhardness of the super-thick DLC coating is about 11-17 GPa, and the elastic modulus of the super-thick DLC coating is about 200-240 GPa. Also has ultrahigh toughness. Meanwhile, the wear-resistant lubricating oil has high film-substrate bonding strength, has excellent wear-resistant and lubricating effects under dry friction conditions and actual working conditions, effectively prolongs the service life of a piston ring, and ensures the stable operation of an engine.
When the load is 10N, the dry friction coefficient is about 0.10-0.11, the surface is almost not abraded, and the dual GCr15 steel ball is seriously abraded. The dry friction coefficient is lower than that of the nitriding/titanium-doped DLC composite coating (0.13-0.15) on the surface of the piston ring. When the actual working condition of a piston ring and the boron cast iron matched pair of the cylinder sleeve material are simulated for opposite grinding, the friction coefficient is unstable and is about 0.18 when the piston ring is preloaded at 50N, the friction coefficient is reduced to about 0.15 when the piston ring is loaded to 100N, the edge of a coating is not peeled off and almost has no abrasion when the piston ring is subjected to opposite grinding, and the abrasion of the matched pair is obvious, so that the coating is high in hardness and good in abrasion resistance.
9. The preparation method provided by the invention is simple and feasible in preparation process, green and environment-friendly, does not cause pollution to the environment, and is suitable for industrial production.
Detailed Description
An ultra-high speed deposition method of a high-bonding-force ultra-thick DLC coating on the surface of a piston ring comprises the following steps:
as shown in fig. 1 to 3, a piston ring 3 is degreased and cleaned and then clamped; placing the clamped piston ring 3 on a sample table 4 in a vacuum chamber 1 of a plasma enhanced chemical vapor deposition device, then placing a coaxial auxiliary cathode 2 on the periphery of the clamped piston ring 3 and the sample table 4, connecting the auxiliary cathode 2 with the negative electrode of a direct current pulse power supply 6, sealing and vacuumizing to 1.5 multiplied by 10-3 Pa。
Wherein: the material of the piston ring 3 is one of cast iron, stainless steel, and nitrided stainless steel.
The distance between the piston ring 3 and the auxiliary cathode 2 is 60-200 mm.
The piston rings 3 are one or more groups.
Secondly, argon is introduced between the auxiliary cathode 2 and the piston ring 3 through an air inlet 5 on the sample table 4, then negative pulse bias voltage is applied to the auxiliary cathode 2, and the surface of the piston ring 3 is subjected to oxide removal cleaning and activation by utilizing the generated argon plasma. The cleaning conditions include argon flow of 100-400 sccm, vacuum degree of 1-3 Pa, negative bias of 5-10 kV, pulse frequency of 1-2 kHz, and continuous cleaning time of 20-60 min.
Thirdly, introducing mixed gas of argon and silane, and depositing by adopting a plasma immersion injection mode. The deposition conditions include argon flow of 100-400 sccm, silane flow of 10-100 sccm, vacuum degree of 10-20 Pa, negative bias variation range of 10-20 kV, pulse frequency of 1-2 kHz, negative bias variation every 2-10 min, and deposition time of 20-60 min. The gradient silicon supporting layer with the hardness range of 6-13 GPa and the thickness of 50-1000 nm is obtained by changing the deposition negative bias.
And fourthly, maintaining the same flow rate of argon and silane in the step three, and performing deposition by gradually increasing the flow of acetylene. The deposition conditions include 100-400 sccm of argon gas flow, 10-100 sccm of silane gas flow, 0-300 sccm of acetylene gas flow, 2-6 Pa of vacuum degree, 0.5-1.2 kV of negative bias voltage, 0.1-2 kHz of pulse frequency, once acetylene gas flow change every 5-20 min, and deposition time of 30-120 min. Thereby realizing the transition from the pure silicon supporting layer to the silicon-doped DLC layer and obtaining the gradient silicon-doped DLC transition layer with the thickness of 1-4 mu m.
And fifthly, keeping the flow velocity same as that of argon and silane in the step three, periodically and alternately adjusting the flow rate of acetylene, and periodically and alternately depositing high-density plasma generated by utilizing the hollow cathode effect on the surface of the piston ring 3. The deposition conditions include 100-400 sccm of argon gas flow, 10-100 sccm of silane gas flow, 0-300 sccm of acetylene gas flow, 2-6 Pa of vacuum degree, 0.5-1.5 kV of negative bias voltage, 0.1-2 kHz of pulse frequency, change of the acetylene gas flow once every 1.5-20 min, and total deposition time of 60-480 min. And after the deposition is finished, obtaining a multi-layer silicon-doped DLC functional layer with the total thickness of 8-35 mu m, naturally cooling, removing vacuum, and taking out the piston ring 3.
Step three, the deposition rate in the step five is 70-120 nm/min.
As shown in FIG. 4, the invention deposits a gradient silicon supporting layer a, a gradient silicon-doped DLC transition layer b and a plurality of periodically alternating silicon-doped DLC functional layers c on a piston ring 3 substrate in sequence, wherein the plurality of functional layers of silicon-doped DLC are formed by alternately arranging silicon-doped DLC with high silicon content (c 1) and low silicon content (c 2) for a plurality of times of repeated generation. Wherein: the support layer and the transition layer can be flexibly selected according to the mechanical property difference between the piston ring 3 substrate and the DLC functional layer.
Example 1
Piston ring made of chromium molybdenum nodular cast ironThe main parameters are as follows: a sheet opening ring-shaped part with the diameter of 140 mm, the diameter width of 4 mm and the thickness of 2.5 mm. The chemical components (mass fraction%) of which are 3.0-3.5C, 2.6-2.9 Si, 0.6-0.8 Mn,<0.1 P、<0.03S, 0.1-0.45 Cr, 0.1-0.45 Mo, typical MgDisabled person0.021, typical Re 0.032 and Fe for the rest. Mechanical properties: hardness is 105-112 HRB, bending strength is 940-1600 MPa, and elastic modulus is 150-180 GPa. The diameter of the auxiliary cathode 2 is 300 mm. The specific operation steps are as follows:
the method comprises the steps of degreasing and cleaning the piston ring 3, and then clamping the piston ring; placing the clamped sample in a vacuum chamber 1 of a plasma enhanced chemical vapor deposition device, coaxially placing an auxiliary cathode 2 connected with a power supply cathode as shown in figures 1-2, and then hermetically vacuumizing to obtain a local vacuum degree of 1.5 × 10-3 Pa, special disposable gloves must be worn in the whole clamping process to ensure the surface cleaning of the piston ring 3.
The cleaning process is as follows: introducing 150 sccm argon gas between the piston ring 3 and the auxiliary cathode 2, maintaining the required vacuum degree in the glow discharge process to be stable at 1.5 Pa, applying negative pulse bias voltage (bias voltage is 6 kV, pulse frequency is 1.5 kHz) to the piston ring 3, and cleaning and activating the argon plasma generated by the hollow cathode effect for 60 min.
Depositing a gradient silicon support layer: the flow rates of the introduced argon and silane are respectively 150 sccm and 50 sccm, the required vacuum degree in the glow discharge process is kept stable at 15 Pa, the initial negative bias voltage is 10 kV, the deposition voltage is changed every 6 min, each time, the deposition voltage is changed by 2 kV, and the duration is 30 min.
Fourthly, depositing a gradient silicon-doped DLC transition layer: keeping the flow of argon and silane as same as the step three, stabilizing the vacuum degree at 3.1 Pa, applying negative bias of 0.85 kV, pulse frequency of 1.5 kHz, introducing acetylene with initial flow of 30 sccm, changing the deposition voltage every 8 min, changing 30 sccm each time, and lasting for 40 min.
Fifthly, depositing silicon doped functional layers with alternate periods: the flow rates of silane and argon are respectively 50 sccm and 150 sccm and are constant, the bias voltage is 0.85 kV, the pulse frequency is 1.5 kHz, the flow rates of silane and acetylene (150 sccm and 50 sccm) are alternately adjusted, the vacuum degrees are respectively corresponding to 3.1 Pa and 2.3 Pa, the deposition time is 16 min and 4 min, and the total deposition time is 400 min after 20 cycles of repeated deposition; and after the coating is finished, naturally cooling, removing vacuum, and taking out the piston ring 3.
An electron microscope photograph and a partial enlarged view of a cross section of the super-thick DLC coating on the functional surface of the cast iron piston ring, as shown in FIG. 5, and an electron microscope photograph of the surface of the super-thick DLC coating on the functional surface of the cast iron piston ring, as shown in FIG. 6, were obtained using a field emission scanning electron microscope (FESEM, JSM-6701F, Japan). As can be seen from the figure, the coating has a uniform and dense multilayer structure, the bonding between layers is tight, the micro-crack propagation and extension are avoided, and the total thickness is about 31 μm; the surface appearance is uniform and compact, and no microscopic defects exist.
Example 2
Taking a tempered martensitic stainless steel (according with ISO 6621-3 fine grade MC 65) piston ring, wherein the main parameters are as follows: a sheet opening ring-shaped part with the diameter of 120 mm, the diameter width of 4 mm and the thickness of 2.5 mm. The chemical composition (mass fraction,%) is 0.50-0.75C, <1.00 Si, <1.00 Mn, < 0.045P, < 0.04S, 11.00-15.00 Cr, <0.6 Mo, and the rest is Fe. The hardness is about 300-400 HV, the typical elastic modulus is 200 GPa, and the transverse rupture strength is about 1128 MPa. The diameter of the auxiliary cathode 2 is 300 mm. The specific operation steps are as follows:
the method comprises the steps of degreasing and cleaning the piston ring 3, and then clamping the piston ring; placing the clamped sample in a vacuum chamber 1 of a plasma enhanced chemical vapor deposition device, coaxially placing an auxiliary cathode 2 connected with a power supply cathode as shown in figures 1-2, and then hermetically vacuumizing to obtain a local vacuum degree of 1.5 × 10-3 Pa, special disposable gloves must be worn in the whole clamping process to ensure the surface cleaning of the piston ring 3.
The cleaning process is as follows: introducing argon gas of 200 sccm between the piston ring 3 and the auxiliary cathode 2, keeping the required vacuum degree in the glow discharge process stable at 1.5 Pa, applying negative pulse bias voltage (bias voltage is 6 kV, pulse frequency is 1.5 kHz) to the piston ring 3, and cleaning and activating by using argon plasma generated by the hollow cathode effect, wherein the whole process lasts for 60 min.
Depositing a gradient silicon support layer: the flow rates of the introduced argon and silane are respectively 150 sccm and 50 sccm, the required vacuum degree in the glow discharge process is kept stable at 15 Pa, the initial negative bias voltage is 10 kV, the deposition voltage is changed every 10 min, each time, the deposition voltage is changed by 1 kV, and the duration is 50 min.
Fourthly, depositing a gradient silicon-doped DLC transition layer: keeping the flow of argon and silane as same as the step three, stabilizing the vacuum degree at 6.0 Pa, applying negative bias of 0.65 kV, pulse frequency of 1.5 kHz, introducing acetylene with initial flow of 20 sccm, changing the deposition voltage every 5 min, changing 20 sccm each time, and keeping the duration of 30 min.
Fifthly, depositing silicon doped functional layers with alternate periods: the flow rates of silane and argon are respectively 50 sccm and 150 sccm and are constant, the bias voltage is 0.65 kV, the pulse frequency is 1.5 kHz, the flow rates of silane and acetylene (120 sccm and 50 sccm) are alternately adjusted, the vacuum degrees are respectively corresponding to 6.0 Pa and 4.2 Pa, the deposition time is 12 min and 4 min, and the total deposition time is 480 min after 30 repeated deposition cycles; and after the coating is finished, naturally cooling, removing vacuum, and taking out the piston ring 3.
Example 3
Taking a nitrided hot martensite stainless steel piston ring, wherein the main parameters are as follows: a sheet opening ring-shaped part with the diameter of 120 mm, the diameter width of 4 mm and the thickness of 2.5 mm. The hardness is about 700-800 HV. The auxiliary cathode 2 has a diameter of 320 mm. The specific operation steps are as follows:
the method comprises the steps of degreasing and cleaning the piston ring 3, and then clamping the piston ring; placing the clamped sample in a vacuum chamber 1 of a plasma enhanced chemical vapor deposition device, coaxially placing an auxiliary cathode 2 connected with a power supply cathode as shown in figures 1-2, and then hermetically vacuumizing to obtain a local vacuum degree of 1.5 × 10-3 Pa, special disposable gloves must be worn in the whole clamping process to ensure the surface cleaning of the piston ring 3.
The cleaning process is as follows: introducing 100 sccm argon gas between the piston ring 3 and the auxiliary cathode 2, maintaining the required vacuum degree in the glow discharge process to be stable at 3.0 Pa, applying negative pulse bias voltage (bias voltage is 6 kV, pulse frequency is 1.5 kHz) to the piston ring 3, and cleaning and activating the argon plasma generated by the hollow cathode effect for 20 min.
Depositing a gradient silicon support layer: the flow rates of the introduced argon and silane are respectively 100 sccm and 50 sccm, the required vacuum degree in the glow discharge process is kept to be stable at 10 Pa, the initial negative bias voltage is 15 kV, the deposition voltage is changed every 10 min, each time, the deposition voltage is changed by 1 kV, and the duration is 50 min.
Fourthly, depositing a gradient silicon-doped DLC transition layer: keeping the flow of argon and silane as same as the step three, stabilizing the vacuum degree at 3.1 Pa, applying negative bias of 1.0 kV, pulse frequency of 1.5 kHz, introducing acetylene with initial flow of 25 sccm, changing the deposition voltage every 5 min, changing 25 sccm each time, and keeping the duration of 30 min.
Fifthly, depositing silicon doped functional layers with alternate periods: the flow rates of silane and argon are respectively 50 sccm and 100 sccm and are constant, the bias voltage is 1.0 kV, the pulse frequency is 1.0 kHz, the flow rates of silane and acetylene (150 sccm and 50 sccm) are alternately adjusted, the vacuum degrees are respectively corresponding to 3.1 Pa and 2.7 Pa, the deposition time is 20 min and 5 min, and the total deposition time is 500 min after 20 cycles of repeated deposition; and after the coating is finished, naturally cooling, removing vacuum, and taking out the piston ring 3.
Example 4
Different from the embodiments 1 to 3, the embodiment describes a one-time large-batch preparation method of an ultra-thick DLC coating with high bonding force, wear resistance and low friction characteristics on the surface of a piston ring, and multiple groups of piston ring samples can be clamped at one time.
Taking a chromium-molybdenum nodular cast iron piston ring, wherein the main parameters are as follows: a thin plate opening ring-shaped part with the diameter of 100 mm, the diameter width of 4 mm and the thickness of 2.5 mm. The diameter of the auxiliary cathode 2 is 200 mm. The specific operation steps are as follows:
the method comprises the steps of degreasing and cleaning the piston ring 3, and then clamping the piston ring; placing the clamped sample in a vacuum chamber of a plasma enhanced chemical vapor deposition device1, coaxially placing an auxiliary cathode 2, placing 4 sets of piston rings (as shown in figure 3) on a sample table 4 according to the method, connecting with a power supply cathode, and then sealing and vacuumizing, wherein the required local vacuum degree is 1.5 × 10-3 Pa, special disposable gloves must be worn in the whole clamping process to ensure the surface cleaning of the piston ring 3.
The cleaning process is as follows: introducing argon gas of 300 sccm between the piston ring 3 and the auxiliary cathode 2, keeping the required vacuum degree in the glow discharge process stable at 1.5 Pa, applying negative pulse bias voltage (the bias voltage is 6 kV, the pulse frequency is 1.5 kHz) to the piston ring, and cleaning and activating the argon plasma generated by the hollow cathode effect for 60 min.
Depositing a gradient silicon support layer: the flow rates of the introduced argon and silane are respectively 300 sccm and 80 sccm, the required vacuum degree in the glow discharge process is kept to be stable at 10 Pa, the initial negative bias voltage is 10 kV, the deposition voltage is changed every 6 min, 2 kV is changed every time, and the duration is 30 min.
Fourthly, depositing a gradient silicon-doped DLC transition layer: keeping the flow of argon and silane as same as the step three, stabilizing the vacuum degree at 3.1 Pa, applying negative bias of 0.85 kV, pulse frequency of 1.5 kHz, introducing acetylene with initial flow of 40 sccm, changing the deposition voltage once every 10 min, changing 40 sccm each time, and keeping the duration of 60 min.
Fifthly, depositing silicon doped functional layers with alternate periods: the flow rates of silane and argon are respectively 80 sccm and 300 sccm and are constant, the bias voltage is 0.85 kV, the pulse frequency is 1.5 kHz, the flow rates of silane and acetylene (240 sccm and 80 sccm) are alternately adjusted, the vacuum degrees are respectively corresponding to 3.1 Pa and 2.3 Pa, the deposition time is 16 min and 4 min, and the total deposition time is 400 min after 20 cycles of repeated deposition; and after the coating is finished, naturally cooling, removing vacuum, and taking out the piston ring 3.