CN113504708B - Light source attenuation monitoring method and device, and light source service life measuring method and device - Google Patents
Light source attenuation monitoring method and device, and light source service life measuring method and device Download PDFInfo
- Publication number
- CN113504708B CN113504708B CN202110690615.1A CN202110690615A CN113504708B CN 113504708 B CN113504708 B CN 113504708B CN 202110690615 A CN202110690615 A CN 202110690615A CN 113504708 B CN113504708 B CN 113504708B
- Authority
- CN
- China
- Prior art keywords
- light source
- wafer
- exposure
- exposure time
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract 14
- 238000012544 monitoring process Methods 0.000 title claims abstract 10
- 235000012431 wafers Nutrition 0.000 claims abstract 36
- 230000005855 radiation Effects 0.000 claims abstract 5
- 238000005259 measurement Methods 0.000 claims 2
- 238000000691 measurement method Methods 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a light source attenuation monitoring method and device and a light source service life measuring method and device. The monitoring method comprises the following steps: obtaining n preparation wafer groups, wherein each preparation wafer group comprises m wafers, and n and m are positive integers greater than 1; using a measured light source to sequentially expose n preparation wafer groups according to a sequence by using first light radiation energy, and determining the moment of exposing each preparation wafer group as a using time point; acquiring the exposure time of the preparation piece for averagely exposing each wafer in each preparation wafer group; and determining the correspondence between the exposure time variable of the preparation sheet composed of the exposure time of each preparation sheet and the use time composed of each use time point. The application can solve the problems that the method for determining the attenuation of the light source by carrying out the irradiance test of the light source at fixed time in the related technology is time-consuming and labor-consuming and is not beneficial to the productivity of the machine.
Description
Technical Field
The application relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a light source attenuation monitoring method and device of a photoetching machine exposure device and a light source service life measuring method and device.
Background
In the semiconductor chip manufacturing process, photolithography is an indispensable link, and the photolithography technique is a precise micromachining technique. At present, most of lithography machines based on ultraviolet light sources use high-pressure mercury lamps as exposure light sources, and along with the increase of the service time point of the mercury lamps, the energy of the output light of the lithography machines is gradually weakened, namely the light intensity is weakened, so that the deviation of the critical dimension (Critical Dimension, CD) of patterns formed by lithography is gradually increased, and the lithography precision is affected.
In the related art, an engineer is generally required to test the irradiance of the light source of the exposure apparatus at regular time to monitor the uniformity and intensity of the light source, and when the irradiance is tested to be lower than a predetermined threshold, it is determined that the light source is attenuated to a level requiring replacement.
However, the method of determining the attenuation of the light source by performing the irradiance test of the light source at regular time is time-consuming and labor-consuming, which is not beneficial to the productivity of the machine.
Disclosure of Invention
The application provides a light source attenuation monitoring method and device, and a light source service life measuring method and device, which can solve the problems that the method for determining the light source attenuation is time-consuming and labor-consuming and is not beneficial to the capacity of a machine in the related technology by carrying out light source irradiance test at regular time.
In a first aspect of the present application, there is provided an exposure apparatus light source attenuation monitoring method, the exposure apparatus light source attenuation monitoring method comprising:
obtaining n preparation wafer groups, wherein each preparation wafer group comprises m wafers, and n and m are positive integers greater than 1;
using a measured light source to sequentially expose the n preparation wafer groups according to the sequence by using first light radiation energy, and determining the moment of exposing each preparation wafer group as a using time point;
acquiring the exposure time of the preparation piece for averagely exposing each wafer in each preparation wafer group;
and determining the correspondence between a preliminary sheet exposure time variable composed of each preliminary sheet exposure time and a use time composed of each use time point.
Optionally, the step of obtaining a preliminary wafer exposure time period for exposing each wafer in each preliminary wafer group on average includes:
acquiring a preliminary set exposure time period for performing the exposure operation on each of the preliminary wafer sets;
and determining the exposure time of the preparation piece for averagely exposing each wafer in each preparation wafer group based on the exposure time of the preparation group.
Optionally, the exposing operation is sequentially performed on the n prepared wafer groups according to the sequence by using the measured light source with the first light radiation energy, and in the step of determining that the time of performing the exposing operation on each prepared wafer group is the using time point, the measured light source performs the exposing operation on each wafer in the n prepared wafer groups with the same first light radiation energy.
Optionally, the correspondence is used to reflect the attenuation change of the measured light source.
In a second aspect of the present application, there is provided an exposure apparatus light source attenuation monitoring apparatus configured to perform the exposure apparatus light source attenuation monitoring method according to the first aspect of the present application.
In a third aspect of the present application, there is provided a light source lifetime measurement method of an exposure apparatus, the light source lifetime measurement method of an exposure apparatus comprising the steps of:
acquiring the corresponding relation between the exposure time variable and the use time of the prepared sheet of the measured light source according to the first aspect of the application;
determining a sheet exposure time threshold according to the corresponding relation, wherein the sheet exposure time threshold is used for judging whether the tested light source has a life;
using the tested light source to perform exposure operation on a target wafer group by using the first light radiation energy;
acquiring the exposure time of a target wafer for averagely exposing each wafer in the target wafers;
judging whether the exposure time of the target piece reaches the exposure time threshold of the piece or not;
and when the exposure time of the target sheet reaches the threshold value of the exposure time of the sheet, determining that the tested light source has a life and needs to be replaced.
Optionally, the step of obtaining a target wafer exposure time for averagely exposing each wafer in the target wafers includes:
acquiring a target group exposure time length which is experienced by the exposure operation of the target wafer group;
and determining the target wafer exposure time length of averagely exposing each wafer in the target wafers based on the target group exposure time length.
Optionally, the target wafer group includes at least one wafer.
In a fourth aspect of the present application, there is provided an exposure apparatus light source lifetime measurement apparatus configured to perform the exposure apparatus light source lifetime measurement method according to the third aspect of the present application.
The technical scheme of the application at least comprises the following advantages: the attenuation change of the light source can be determined by monitoring the wafer exposure time of the light source of the exposure device for one wafer so as to monitor the change of the radiation intensity of the light source, and the light source reaching the wafer exposure time threshold value during exposure is determined to have reached the life through setting the wafer exposure time threshold value so as to be replaced in time.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of a method for monitoring attenuation of a light source of an exposure apparatus according to an embodiment of the present application;
FIG. 2a shows a schematic diagram of a preliminary wafer package in this embodiment;
FIG. 2b is a schematic diagram showing the sequential exposure of n sets of prepared wafers by the light source under test;
fig. 2c shows a schematic diagram of the correspondence between each of the prepared wafer sets Lot and each of the usage time points T;
fig. 2d shows a schematic diagram of the correspondence of the preliminary set exposure periods Dur experienced by the respective preliminary wafer sets Lot at the respective usage time points T;
FIG. 2e shows the correspondence between the preliminary wafer exposure time Dur-W, which is experienced by each wafer in each preliminary wafer Lot Lot to be subjected to an average exposure, and the preliminary wafer Lot Lot;
FIG. 3 is a flowchart showing a method for measuring the lifetime of a light source of an exposure apparatus according to an embodiment of the present application;
FIG. 4 is a diagram showing the correspondence between the preliminary sheet exposure time variable and the usage time
Detailed Description
The following description of the embodiments of the present application will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
Fig. 1 shows a flowchart of a method for monitoring light source attenuation of an exposure apparatus according to an embodiment of the present application, and as can be seen from fig. 1, the method for monitoring light source attenuation of an exposure apparatus includes the following steps sequentially executed:
step S11: obtaining n preparation wafer groups, wherein each preparation wafer group comprises m wafers, and n and m are positive integers greater than 1.
The n prepared wafer groups are used for detecting the attenuation change process of the radiation intensity of the detected light source along with the increase of the service time in the subsequent process.
Fig. 2a shows a schematic diagram of a preliminary wafer set in this embodiment, and as can be seen from fig. 2a, this embodiment includes a plurality of preliminary wafer sets Lot [1:n ] such as a first preliminary wafer set Lot [1], a second preliminary wafer set Lot [2] and an n-th preliminary wafer set Lot [ n ], each of which includes a plurality of wafers W [1:m ], e.g., the n-th preliminary wafer set Lot [ n ] includes a plurality of wafers W [1:m ] such as a first wafer W [1], a second wafer W [2] and an m-th wafer W [ m ].
Step S12: and using the measured light source to sequentially expose the n preparation wafer groups according to the sequence by using the first light radiation energy, and determining the moment of exposing each preparation wafer group as a using time point.
Fig. 2b shows a schematic diagram of the exposure operation performed by the tested light source on n prepared wafer sets in sequence, and it can be seen from fig. 2b that the exposure operation performed by the tested light source 200 on a plurality of prepared wafer sets Lot [1:n ] in sequence.
Fig. 2c shows a schematic diagram of a correspondence relationship between each of the plurality of preliminary wafer sets Lot and each of the usage time points T, and as can be seen from fig. 2c, the exposure operation is performed on the plurality of preliminary wafer sets Lot [1:n ] at the usage time point T [1:n ], that is, the exposure operation is performed on the first preliminary wafer set Lot [1] at the first usage time point T [1], the exposure operation … is performed on the second preliminary wafer set Lot [2] at the second usage time point T [2] and the exposure operation is performed on the n-th preliminary wafer set Lot [ n ] at the n-th usage time point T [ n ]. In the using time point T [1:n ], the using time of the measured light source gradually increases from the first using time point T [1] to the nth using time point T [ n ].
The light radiation energy of the measured light source 200 when exposing each wafer in each of the prepared wafer groups Lot is the same, and is the first light radiation energy.
It should be explained that the light radiation intensity of the measured light source gradually decays as the use time of the measured light source increases. After the attenuation, if the measured light source still exposes the wafer with the first light radiation energy, the wafer exposure time of the wafer needs to be increased. That is, the intensity of the light radiation for performing the exposure operation on the wafer is inversely proportional to the exposure time period on the premise that the energy of the light radiation is unchanged.
Step S13: a preliminary set exposure time period that the exposure operation is performed on each preliminary wafer set is acquired.
Fig. 2d shows a schematic diagram of the correspondence of the preliminary set exposure time Dur-L experienced by each of the preliminary wafer sets Lot at each of the usage time points T. As can be seen from FIG. 2d, the measured light source is used to expose the first preparation wafer group Lot 1 with a first light radiation energy at a first use time point T1, and is required to experience a first preparation group exposure time Dur-L1; the measured light source is used for exposing the second prepared wafer group Lot 2 with the first light radiation energy at the second using time point T2, and the measured light source needs to be subjected to the second prepared group exposure time Dur-L2 …, and the measured light source is used for exposing the n prepared wafer group Lot n with the first light radiation energy at the n-th using time point T n, and the n-th prepared group exposure time Dur-L n needs to be subjected to.
Step S14: and determining the exposure time of the preparation piece for averagely exposing each wafer in each preparation wafer group based on the exposure time of the preparation group.
Since the plurality of preliminary wafer groups Lot [1:n ], each of which includes a plurality of wafers W [1:m ], the preliminary wafer exposure time Dur-W [1:n ] for average exposure of each wafer in each of the preliminary wafer groups can be calculated and determined based on the preliminary group exposure time Dur-L [1:n ] and the number of wafers in the corresponding preliminary wafer group Lot [1:n ].
For example, the n-th preliminary wafer Lot Lot [ n ] includes m wafers W [1:m ], and step S13 acquires an exposure operation of the n-th preliminary wafer Lot Lot [ n ] with the first light irradiation energy at the n-th use time point T [ n ] for the n-th preliminary Lot exposure period Dur-L [ n ]. Since the n-th preliminary set exposure time Dur-L [ n ] is a superposition of the exposure time of each wafer W in the n-th preliminary wafer set Lot [ n ], the preliminary wafer exposure time Dur-W [1:n ] experienced by each wafer to be subjected to average exposure is calculated and determined based on the n-th preliminary set exposure time Dur-L [ n ] and the number of wafers in the n-th preliminary wafer set Lot [ n ].
Fig. 2e shows the correspondence between the preliminary wafer exposure time Dur-W, which is experienced by each wafer in each preliminary wafer Lot to be averagely exposed, and the preliminary wafer Lot. As can be seen from FIG. 2e, each wafer in the first preliminary wafer Lot Lot [1] is subjected to the first preliminary wafer exposure period Dur-W [1] by the measured light source, each wafer in the second preliminary wafer Lot Lot [2] is subjected to the second preliminary wafer exposure period Dur-W [2] by the measured light source, and each wafer in the n preliminary wafer Lot Lot [ n ] is subjected to the n preliminary wafer exposure period Dur-W [ n ] by the measured light source.
Step S15: and determining the correspondence between a preliminary sheet exposure time variable composed of each preliminary sheet exposure time and a use time composed of each use time point.
With continued reference to fig. 2e, according to the above steps S11 to S14, it may be determined that each of the n preliminary wafer sets Lot [1:n ] corresponds to one preliminary wafer exposure period Dur-W and one usage time point T, and a plurality of the preliminary wafer exposure periods form a preliminary wafer exposure period variable Dur-W and a plurality of usage time points form a usage time T, so that a correspondence relationship between the preliminary wafer exposure period variable Dur-W and the usage time T may be determined, and an expression form of the correspondence relationship may be an icon or a function. The corresponding relation is used for reflecting the attenuation change state of the light source of the exposure device along with the use time.
An embodiment of the present application further provides an exposure apparatus light source attenuation monitoring device, which is used for executing the embodiment of the exposure apparatus light source attenuation monitoring method shown in fig. 1.
The embodiment can monitor the change of the radiation intensity of the light source by monitoring the exposure time of the light source of the exposure device to one wafer, so as to determine the attenuation change of the light source.
According to the method for monitoring the attenuation of the light source of the exposure device shown in fig. 1, the attenuation change of the light source along with the service time can be monitored. The light source such as mercury lamp has a specific service life, i.e. the radiation intensity decays rapidly after a period of use, and can not be used normally, so that it is necessary to determine whether the light source has reached the life according to the light source decay monitoring method of the exposure device shown in fig. 1.
Fig. 3 is a flowchart showing a method for measuring the lifetime of a light source of an exposure apparatus according to an embodiment of the present application, wherein the method for measuring the lifetime of a light source of an exposure apparatus uses the method for monitoring the attenuation of a light source of an exposure apparatus shown in fig. 1 to detect whether a target light source has reached a lifetime and needs replacement. Referring to fig. 3, it can be seen that the method for measuring the lifetime of the light source of the exposure apparatus includes the following steps, which are sequentially performed:
step S31: the correspondence between the preliminary sheet exposure time variable and the usage time of the measured light source shown in fig. 2e is obtained.
Wherein, the expression form of the corresponding relation can be an icon or a function. The preliminary sheet exposure period variable Dur-W shown in fig. 2e includes a plurality of preliminary sheet exposure periods, and the measured light source emits the same first light radiation energy in each preliminary sheet exposure period; the using time T comprises a plurality of using time points which have a sequence in the time domain, and the exposure time of the prepared piece corresponds to the using time points one by one.
Step S32: and determining a sheet exposure time threshold according to the corresponding relation, wherein the sheet exposure time threshold is used for judging whether the tested light source has a life or not.
The corresponding relation can determine the change speed of the exposure time length of the preparation piece at each use time point, and the change speed of the exposure time length of the preparation piece can reflect the attenuation state of the measured light source.
Referring to fig. 4, a graph of the correspondence between the exposure time variable of the preliminary sheet and the usage time is shown, and as can be seen from fig. 4, the abscissa is the usage time T, the ordinate is the exposure time variable Dur-W of the preliminary sheet, the curve X is the correspondence between the exposure time variable of the preliminary sheet and the usage time, and the slope at each point of the curve X can reflect the attenuation degree of the measured light source. Before the use time point A in FIG. 4, the change speed of the exposure time length of the preparation piece of the measured light source is close to 0, the exposure time length of the preparation piece is stable, and the attenuation of the measured light source is determined to be smaller or no attenuation; at the use time point a in fig. 4, the change speed of the exposure time length of the prepared piece of the measured light source suddenly increases, the change speed of the exposure time length of the prepared piece of the measured light source at the subsequent use time point continuously keeps larger, the exposure time length of the prepared piece gradually increases, and the measured light source gradually decays from the use time point a; at the point of use B in fig. 4, the preliminary wafer exposure time of the measured light source increases to the wafer exposure time threshold, and it is determined that the measured light source needs to be replaced for a long period of time, and if not replaced, the production efficiency is severely reduced.
The exposure time threshold can be set according to the requirement of production efficiency.
Step S33: using the tested light source to perform exposure operation on a target wafer group by using the first light radiation energy; the target wafer group comprises at least one wafer.
Step S34: and acquiring a target group exposure time length which is experienced by the exposure operation of the target wafer group.
Step S35: and determining the target wafer exposure time length of averagely exposing each wafer in the target wafers based on the target group exposure time length.
Step S36: and judging whether the exposure time of the target sheet reaches the threshold value of the exposure time of the sheet.
Step S37: when the target sheet exposure time reaches the sheet exposure time threshold, determining that the tested light source needs to be replaced after the service life of the tested light source is reached, otherwise, the tested light source can be replaced without replacement.
The application also provides an exposure apparatus light source lifetime measurement device for executing the embodiment of the exposure apparatus light source lifetime measurement method shown in fig. 3.
The embodiment can monitor the change of the radiation intensity of the light source by monitoring the sheet exposure time of the light source of the exposure device on one wafer, thereby determining the attenuation change of the light source.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the application.
Claims (8)
1. The method for monitoring the light source attenuation of the exposure device is characterized by comprising the following steps of:
obtaining n preparation wafer groups, wherein each preparation wafer group comprises m wafers, and n and m are positive integers greater than 1;
using a measured light source to sequentially expose the n preparation wafer groups according to the sequence by using first light radiation energy, and determining the moment of exposing each preparation wafer group as a using time point;
acquiring the exposure time of the preparation piece for averagely exposing each wafer in each preparation wafer group;
and determining a corresponding relation between a preliminary sheet exposure time variable composed of each preliminary sheet exposure time and a use time composed of each use time point, wherein the corresponding relation is used for reflecting the attenuation change of the measured light source.
2. The method for monitoring attenuation of light source of exposure apparatus according to claim 1, wherein the step of obtaining a preliminary wafer exposure time period for average exposure of each wafer in each preliminary wafer group comprises:
acquiring a preliminary set exposure time period for performing the exposure operation on each of the preliminary wafer sets;
and determining the exposure time of the preparation piece for averagely exposing each wafer in each preparation wafer group based on the exposure time of the preparation group.
3. The method for monitoring attenuation of light source of exposure apparatus according to claim 1, wherein the exposure operation is sequentially performed on the n preliminary wafer sets in a sequential order by using a measured light source with a first light radiation energy, and in the step of determining a time point of use of the exposure operation on each preliminary wafer set, the measured light source performs the exposure operation on each wafer in the n preliminary wafer sets with the same first light radiation energy.
4. An exposure apparatus light source attenuation monitoring apparatus, characterized in that the exposure apparatus light source attenuation monitoring apparatus is configured to perform the exposure apparatus light source attenuation monitoring method according to any one of claims 1 to 3.
5. A method for measuring the lifetime of a light source of an exposure apparatus, comprising the steps of:
obtaining a correspondence between a measured light source preparation sheet exposure time variable and a use time by using the light source attenuation monitoring method of the exposure device according to any one of claims 1 to 3;
determining a sheet exposure time threshold according to the corresponding relation, wherein the sheet exposure time threshold is used for judging whether the tested light source has a life;
using the tested light source to perform exposure operation on a target wafer group by using the first light radiation energy;
acquiring the exposure time of a target wafer for averagely exposing each wafer in the target wafer group;
judging whether the exposure time of the target piece reaches the exposure time threshold of the piece or not;
and when the exposure time of the target sheet reaches the threshold value of the exposure time of the sheet, determining that the tested light source has a life and needs to be replaced.
6. The method of measuring a lifetime of a light source of an exposure apparatus according to claim 5, wherein the step of obtaining a target wafer exposure time period for average exposure of each of the target wafers comprises:
acquiring a target group exposure time length which is experienced by the exposure operation of the target wafer group;
and determining the target wafer exposure time for averagely exposing each wafer in the target wafer group based on the target group exposure time.
7. The method of measuring a lifetime of a light source of an exposure apparatus according to claim 5, wherein the target wafer group includes at least one wafer.
8. An exposure apparatus light source lifetime measurement device characterized in that the exposure apparatus light source lifetime measurement device is configured to execute the exposure apparatus light source lifetime measurement method according to any one of claims 5 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110690615.1A CN113504708B (en) | 2021-06-22 | 2021-06-22 | Light source attenuation monitoring method and device, and light source service life measuring method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110690615.1A CN113504708B (en) | 2021-06-22 | 2021-06-22 | Light source attenuation monitoring method and device, and light source service life measuring method and device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113504708A CN113504708A (en) | 2021-10-15 |
| CN113504708B true CN113504708B (en) | 2023-09-12 |
Family
ID=78010664
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110690615.1A Active CN113504708B (en) | 2021-06-22 | 2021-06-22 | Light source attenuation monitoring method and device, and light source service life measuring method and device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113504708B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005001913A1 (en) * | 2003-06-30 | 2005-01-06 | Nikon Corporation | Stage control apparatus, stage control method, light exposure apparatus, and light exposure method |
| CN102830590A (en) * | 2011-06-14 | 2012-12-19 | 上海微电子装备有限公司 | Light source life monitoring system and its monitoring method |
| CN203858450U (en) * | 2014-04-28 | 2014-10-01 | 上海大学 | A lithography machine based on QLED light source |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10227304A1 (en) * | 2002-06-19 | 2004-01-15 | Infineon Technologies Ag | Method for exposing a semiconductor wafer in an exposure apparatus |
-
2021
- 2021-06-22 CN CN202110690615.1A patent/CN113504708B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005001913A1 (en) * | 2003-06-30 | 2005-01-06 | Nikon Corporation | Stage control apparatus, stage control method, light exposure apparatus, and light exposure method |
| CN102830590A (en) * | 2011-06-14 | 2012-12-19 | 上海微电子装备有限公司 | Light source life monitoring system and its monitoring method |
| CN203858450U (en) * | 2014-04-28 | 2014-10-01 | 上海大学 | A lithography machine based on QLED light source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113504708A (en) | 2021-10-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102073006A (en) | Calibration method of electrical properties of solar cells | |
| CN112491634A (en) | Full-link intelligent fault simulation and assessment defense method in micro-service scene | |
| CN113504708B (en) | Light source attenuation monitoring method and device, and light source service life measuring method and device | |
| CN116643226A (en) | Integrated circuit ATE equipment calibration method | |
| JP7610080B2 (en) | Method and apparatus for detecting surface defects on semiconductor wafer | |
| CN114624526A (en) | A step-stress accelerated life test method for evaluating the reliability of electric meters | |
| CN110581082B (en) | Method for monitoring wafer defects by using defect detection machine | |
| CN104716069A (en) | Method and device for monitoring internal environment of wafer acceptability testing machine | |
| US20100145646A1 (en) | Predicting Wafer Failure Using Learned Probability | |
| CN110426189A (en) | A kind of active medical instrument reliability test method based on combined stress | |
| JP4503924B2 (en) | Lithographic method and apparatus for forming semiconductor devices on a wafer | |
| CN114839514B (en) | Dynamic optimization method and system for chip test engineering | |
| CN102375350A (en) | Detection layout and detection method of development technology | |
| KR19990026444A (en) | Defect Monitoring Method of Semiconductor Devices | |
| CN106597811B (en) | Method for monitoring litho machine imaging plane exception | |
| JP3730447B2 (en) | Burn-in apparatus and burn-in control method | |
| JP2011033549A (en) | Inspection method of probe card, inspection method of semiconductor device and probe card | |
| CN113485157A (en) | Wafer simulation test method and device and wafer test method | |
| RU2082178C1 (en) | Method for selecting plates with radiation-resistant mos integrated circuits | |
| KR102738100B1 (en) | Semiconductor substrate yield prediction based on spectral data from multiple substrate dies | |
| KR100942202B1 (en) | Information processing apparatus, information processing method and computer readable medium | |
| CN106898563A (en) | Product Acceptance Review system and Product Acceptance Review method | |
| CN119619770B (en) | A probe card detection system and method | |
| KR100469320B1 (en) | Control method of electron beam irradiation to improve characteristics of the power semiconductors | |
| CN119473782A (en) | Electrical test data monitoring method and device, electronic equipment and storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |