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CN113504184B - Adjustable and controllable medium chiral nanometer enhancement device and system - Google Patents

Adjustable and controllable medium chiral nanometer enhancement device and system Download PDF

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CN113504184B
CN113504184B CN202110773209.1A CN202110773209A CN113504184B CN 113504184 B CN113504184 B CN 113504184B CN 202110773209 A CN202110773209 A CN 202110773209A CN 113504184 B CN113504184 B CN 113504184B
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王勇凯
董军
王倩颖
李知多
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Abstract

本申请涉及可调控的介质手性纳米增强装置及系统,具体而言,涉及手性装置领域。本申请提供可调控的介质手性纳米增强装置,装置包括:基底、介质层、二硫化物层和复合结构层;该光信号在该复合结构层与介质层中产生导模共振,并在金属上表面产生表面产生表面等离极化激元共振,进而使得该二硫化物层的热损耗和表面电流增强,从而增强该复合结构层的光学手性,最终实现对手性增强的目的;由于该第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒的材料为相变材料,温度改变使得第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒的电导率的变化,从而引起本申请的装置的折射率的变化,即本申请可以通过改变温度,实现对CD信号的动态调控。

Figure 202110773209

The present application relates to controllable medium chiral nano-enhancing devices and systems, and in particular, to the field of chiral devices. The present application provides a tunable dielectric chiral nano-enhancing device, the device includes: a substrate, a dielectric layer, a disulfide layer and a composite structure layer; the optical signal generates guided mode resonance in the composite structure layer and the dielectric layer, and the optical signal generates a guided mode resonance in the metal layer. The upper surface generates surface plasmon resonance, which in turn increases the heat loss and surface current of the disulfide layer, thereby enhancing the optical chirality of the composite structural layer, and finally achieving the purpose of enhancing chirality; The materials of the second nanorods, the third nanorods, the fourth nanorods and the fifth nanorods are phase change materials, and the temperature change makes the conductance of the second nanorods, the third nanorods, the fourth nanorods and the fifth nanorods The change of the rate, thereby causing the change of the refractive index of the device of the present application, that is, the present application can realize the dynamic regulation of the CD signal by changing the temperature.

Figure 202110773209

Description

可调控的介质手性纳米增强装置及系统Tunable dielectric chiral nano-enhanced devices and systems

技术领域technical field

本申请涉及手性装置领域,具体而言,涉及一种可调控的介质手性纳米增强装置及系统。The present application relates to the field of chiral devices, in particular, to a controllable medium chiral nano-enhancing device and system.

背景技术Background technique

手性是指结构的几何特性,即不能通过简单的旋转或平移而与其镜像叠加。手性在自然界中广泛存在,例如DNA和蛋白质。圆二色性是指手性材料由于折射率虚部的差异导致对左旋圆偏振光(LCP)和右旋圆偏振(RCP)光具有吸收或者透射差异。近年来人造手性纳米结构因其具有天然手性材料所不能呈现的光学特性而被广泛研究,如圆二色性(CD)、不对称传输效应(AT)、负折射率等。CD光谱已经被用于手性传感、选择性热辐射、手性成像等。Chirality refers to the geometrical property of a structure that its mirror image cannot be superimposed by a simple rotation or translation. Chirality occurs widely in nature, such as DNA and proteins. Circular dichroism refers to the difference in absorption or transmission of left-circularly polarized light (LCP) and right-circularly polarized (RCP) light caused by the difference in the imaginary part of the refractive index of chiral materials. In recent years, artificial chiral nanostructures have been widely studied due to their optical properties that cannot be exhibited by natural chiral materials, such as circular dichroism (CD), asymmetric transmission effect (AT), negative refractive index, etc. CD spectroscopy has been used for chiral sensing, selective thermal radiation, chiral imaging, etc.

现有技术中,研究人员探索了基于金属的局部表面等离极化激元(LSP)和表面等离极化激元(SPP)的手性增强纳米结构。对于手性金属纳米系统,可以通过添加石墨烯产生杂化表面等离激元以增强CD信号,并且通过调节石墨烯的费米能级、电压控制等方式可主动调控CD信号。然而手性金属纳米系统光学损耗较强,此外石墨烯的表面等离激元存在于太赫兹和中远红外频率范围内。In the prior art, researchers have explored metal-based localized surface plasmon polaritons (LSPs) and surface plasmon polaritons (SPPs) for chirality-enhanced nanostructures. For chiral metal nanosystems, hybrid surface plasmons can be generated by adding graphene to enhance the CD signal, and the CD signal can be actively regulated by adjusting the Fermi level and voltage control of graphene. However, the optical loss of chiral metal nanosystems is strong, and surface plasmons of graphene exist in the terahertz and mid-to-far-infrared frequency range.

现有技术中的手性介质结构,在可见光波段对圆二色性的增强较弱,且无法动态调控CD信号。The chiral medium structure in the prior art has weak enhancement of circular dichroism in the visible light band, and cannot dynamically control the CD signal.

发明内容SUMMARY OF THE INVENTION

本发明的目的在于,针对上述现有技术中的不足,提供一种可调控的介质手性纳米增强装置及系统,以解决现有技术中使得现有技术中的手性介质结构,在可见光波段对圆二色性的增强较弱,且无法动态调控CD信号的问题。The purpose of the present invention is to provide a controllable medium chiral nano-enhancing device and system in view of the above-mentioned deficiencies in the prior art, so as to solve the problem of making the chiral medium structure in the prior art in the visible light band. The enhancement of circular dichroism is weak, and the CD signal cannot be dynamically regulated.

为实现上述目的,本发明实施例采用的技术方案如下:To achieve the above purpose, the technical solutions adopted in the embodiments of the present invention are as follows:

第一方面,本申请提供一种可调控的介质手性纳米增强装置,装置包括:基底、介质层、二硫化物层和复合结构层;介质层设置在基底的一侧,二硫化物层设置在介质层远离基底的一侧,复合结构层设置在二硫化物层远离基底的一侧,复合结构层包括多个纳米结构部,每个纳米结构部均包括第一纳米棒、第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒,第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒均倾斜设置在第一纳米棒的侧壁上,且第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒中至少一个的材料为相变材料。In a first aspect, the present application provides a controllable dielectric chiral nano-enhancing device. The device includes: a substrate, a dielectric layer, a disulfide layer and a composite structure layer; the dielectric layer is arranged on one side of the substrate, and the disulfide layer is arranged on one side. On the side of the dielectric layer away from the substrate, the composite structure layer is disposed on the side of the disulfide layer away from the substrate, the composite structure layer includes a plurality of nanostructure parts, and each nanostructure part includes a first nanorod and a second nanorod , the third nanorod, the fourth nanorod and the fifth nanorod, the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod are all inclined on the sidewall of the first nanorod, and the third The material of at least one of the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod is a phase change material.

可选地,该纳米结构部的平行于第一纳米棒的轴向长度为460nm-500nm,纳米结构部的垂直于第一纳米棒的轴向长度为460nm-480nm。Optionally, an axial length of the nanostructure portion parallel to the first nanorod is 460 nm-500 nm, and an axial length of the nanostructure portion perpendicular to the first nanorod is 460 nm-480 nm.

可选地,该第二纳米棒和第三纳米棒同一点之间的距离为140nm-190nm。Optionally, the distance between the same point of the second nanorod and the third nanorod is 140nm-190nm.

可选地,该第四纳米棒和第五纳米棒同一点之间的距离为140nm-190nm。Optionally, the distance between the same point of the fourth nanorod and the fifth nanorod is 140nm-190nm.

可选地,该第二纳米棒的长度与第三纳米棒的长度不相等,第四纳米棒的长度与第五纳米棒的长度不相等。Optionally, the length of the second nanorod is not equal to the length of the third nanorod, and the length of the fourth nanorod is not equal to the length of the fifth nanorod.

可选地,该第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒与第一纳米棒的侧壁的夹角均为45度。Optionally, the included angles of the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod and the sidewall of the first nanorod are all 45 degrees.

可选地,该二硫化物层的材料为MoS2和/或WS2Optionally, the material of the disulfide layer is MoS 2 and/or WS 2 .

可选地,该基底的材料为金和/或银。Optionally, the material of the substrate is gold and/or silver.

可选地,该第一纳米棒的材料为高折射率材料。Optionally, the material of the first nanorod is a high refractive index material.

第二方面,本申请提供一种可调控的介质手性纳米增强系统,系统包括:温度控制装置、手性分子溶液、光谱仪和第一方面任意一项的可调控的介质手性纳米增强装置,温度控制装置设置在装置的复合结构层的外部,用于改变复合结构层的温度,分子溶液填充设置在复合结构层的缝隙中,光谱仪用于对装置的出射光的光谱进行检测。In a second aspect, the present application provides a controllable medium chiral nano-enhancing system, the system comprising: a temperature control device, a chiral molecular solution, a spectrometer and the adjustable medium chiral nano-enhancing device of any one of the first aspect, The temperature control device is arranged outside the composite structure layer of the device to change the temperature of the composite structure layer, the molecular solution is filled in the gap of the composite structure layer, and the spectrometer is used to detect the spectrum of the emitted light of the device.

本发明的有益效果是:The beneficial effects of the present invention are:

本申请提供可调控的介质手性纳米增强装置,装置包括:基底、介质层、二硫化物层和复合结构层;介质层设置在基底的一侧,二硫化物层设置在介质层远离基底的一侧,复合结构层设置在二硫化物层远离基底的一侧,复合结构层包括多个纳米结构部,每个纳米结构部均包括第一纳米棒、第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒,第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒均倾斜设置在第一纳米棒的侧壁上,且第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒中至少一个的材料为相变材料;当需要对手性进行增强时,使用圆偏振光照射该装置的表面,该光信号在该复合结构层与介质层之间产生导模共振,并在基底的上表面产生表面等离极化激元共振,进而使得该二硫化物层的热损耗和表面电流增强,进而使得圆偏振光和本申请的装置之间的相互作用得到增加,从而增强该复合结构层的光学手性,从而实现对手性增强的目的;另外,由于该第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒的材料为相变材料,温度改变使得该第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒的电导率的变化,从而引起本申请的装置的折射率的变化,进而使得圆二色性的光谱发生改变,即本申请可以通过改变温度,实现对CD信号的动态调控。The present application provides a controllable dielectric chiral nano-enhancing device, the device includes: a substrate, a dielectric layer, a disulfide layer and a composite structure layer; the dielectric layer is disposed on one side of the substrate, and the disulfide layer is disposed on the side of the dielectric layer away from the substrate. On one side, the composite structure layer is arranged on the side of the disulfide layer away from the substrate, and the composite structure layer includes a plurality of nanostructure parts, and each nanostructure part includes a first nanorod, a second nanorod, a third nanorod, The fourth nanorod and the fifth nanorod, the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod are all inclined on the sidewall of the first nanorod, and the second nanorod, the third nanorod The material of at least one of the nanorods, the fourth nanorod and the fifth nanorod is a phase change material; when the chirality needs to be enhanced, circularly polarized light is used to irradiate the surface of the device, and the optical signal is in the composite structure layer and the medium. A guided mode resonance is generated between the layers, and a surface plasmon resonance is generated on the upper surface of the substrate, thereby enhancing the heat loss and surface current of the disulfide layer, thereby making the circularly polarized light and the device of the present application. The interaction between the two is increased, thereby enhancing the optical chirality of the composite structure layer, so as to achieve the purpose of enhancing chirality; in addition, due to the The material is a phase change material, and the temperature change makes the conductivity of the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod change, thereby causing the refractive index of the device of the present application to change, thereby making the circular The spectrum of the dichroism changes, that is, the application can realize the dynamic regulation of the CD signal by changing the temperature.

附图说明Description of drawings

为了更清楚地说明本发明实施例的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本发明的某些实施例,因此不应被看作是对范围的限定,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他相关的附图。In order to illustrate the technical solutions of the embodiments of the present invention more clearly, the following briefly introduces the accompanying drawings used in the embodiments. It should be understood that the following drawings only show some embodiments of the present invention, and therefore do not It should be regarded as a limitation of the scope, and for those of ordinary skill in the art, other related drawings can also be obtained according to these drawings without any creative effort.

图1为本发明一实施例提供的一种可调控的介质手性纳米增强装置的结构的主视图;1 is a front view of the structure of a controllable dielectric chiral nano-enhancing device according to an embodiment of the present invention;

图2为本发明一实施例提供的一种可调控的介质手性纳米增强装置的结构的俯视图;2 is a top view of the structure of a controllable dielectric chiral nano-enhancing device according to an embodiment of the present invention;

图3为本发明一实施例提供的可调控的介质手性纳米增强装置的CD增强效果图;FIG. 3 is a CD enhancement effect diagram of the adjustable dielectric chiral nano-enhancing device provided by an embodiment of the present invention;

图4为本发明一实施例提供的可调控的介质手性纳米增强装置的CD调控效果图;Fig. 4 is a CD regulation effect diagram of the adjustable medium chiral nano-enhancing device provided by an embodiment of the present invention;

图5为本发明另一实施例提供的可调控的介质手性纳米增强装置的CD增强效果图;FIG. 5 is a CD enhancement effect diagram of the adjustable dielectric chiral nano-enhancing device provided by another embodiment of the present invention;

图6为本发明另一实施例提供的可调控的介质手性纳米增强装置的CD调控效果图。FIG. 6 is a diagram showing the CD control effect of the controllable medium chiral nano-enhancing device provided by another embodiment of the present invention.

图标:10-基底;20-介质层;30-二硫化物层;40-复合结构层;41-第一纳米棒;42-第二纳米棒;43-第三纳米棒;44-第四纳米棒;45-第五纳米棒。Icon: 10-substrate; 20-dielectric layer; 30-disulfide layer; 40-composite structure layer; 41-first nanorod; 42-second nanorod; 43-third nanorod; 44-fourth nanorod Rod; 45-fifth nanorod.

具体实施方式Detailed ways

为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一实施例,而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。In order to make the purposes, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments It is an embodiment of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the drawings herein may be arranged and designed in a variety of different configurations.

因此,以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围,而是仅仅表示本发明的选定实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。Thus, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the invention as claimed, but is merely representative of selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

应注意到:相似的标号和字母在下面的附图中表示类似项,因此,一旦某一项在一个附图中被定义,则在随后的附图中不需要对其进行进一步定义和解释。It should be noted that like numerals and letters refer to like items in the following figures, so once an item is defined in one figure, it does not require further definition and explanation in subsequent figures.

为了使本发明的实施过程更加清楚,下面将会结合附图进行详细说明。In order to make the implementation process of the present invention clearer, a detailed description will be given below with reference to the accompanying drawings.

图1为本发明一实施例提供的一种可调控的介质手性纳米增强装置的结构的主视图;图2为本发明一实施例提供的一种可调控的介质手性纳米增强装置的结构的俯视图;如图1和图2所示,本申请提供一种可调控的介质手性纳米增强装置,装置包括:基底10、介质层20、二硫化物层30和复合结构层40;介质层20设置在基底10的一侧,二硫化物层30设置在介质层20远离基底10的一侧,复合结构层设置在二硫化物层30远离基底10的一侧,复合结构层包括多个纳米结构部,每个纳米结构部均包括第一纳米棒41、第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45,第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45均倾斜设置在第一纳米棒41的侧壁上,且第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45中至少一个的材料为相变材料。FIG. 1 is a front view of the structure of a controllable dielectric chiral nano-enhancing device provided by an embodiment of the present invention; FIG. 2 is a structure of a controllable dielectric chiral nano-enhancing device provided by an embodiment of the present invention 1 and 2, the present application provides a controllable dielectric chiral nano-enhancing device, the device includes: a substrate 10, a dielectric layer 20, a disulfide layer 30 and a composite structure layer 40; a dielectric layer 20 is arranged on the side of the substrate 10, the disulfide layer 30 is arranged on the side of the dielectric layer 20 away from the substrate 10, the composite structure layer is arranged on the side of the disulfide layer 30 away from the substrate 10, and the composite structure layer includes a plurality of nanometers. Structure parts, each nanostructure part includes a first nanorod 41, a second nanorod 42, a third nanorod 43, a fourth nanorod 44 and a fifth nanorod 45, a second nanorod 42, a third nanorod 43. The fourth nanorod 44 and the fifth nanorod 45 are all inclined on the sidewall of the first nanorod 41, and the second nanorod 42, the third nanorod 43, the fourth nanorod 44 and the fifth nanorod The material of at least one of 45 is a phase change material.

本申请的可调控的介质手性纳米增强装置的基底10、介质层20、二硫化物层30的形状和尺寸根据实际需要而定,在此不做具体限定,该基底10的顶部设置有该介质层20,该介质层20的上部设置有二硫化物层30,该二硫化物层30的顶部设置有复合结构层40,该复合结构层40包括多个纳米结构部,多个纳米结构部平铺在该介质层20的顶部,使得该介质层20的顶部形成复合结构层40,由于该复合结构层40包括第一纳米棒41、第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45,且该第一纳米棒41的周围分别倾斜设置有第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45,该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45与该第一纳米棒41之间的夹角根据实际需要进行设置,在此不做具体限定,一般的该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45分别设置在该第一纳米棒41相对的两侧。当需要对手性进行增强时,使用圆偏振光照射该装置的表面,该光信号在该复合结构层40与介质层20之间产生导模共振,并在基底10的表面产生表面等离极化激元共振,进而使得该二硫化物层30的热损耗和表面电流增强,进而使得圆偏振光和本申请的装置之间的相互作用得到增加,从而增强该复合结构层40的光学手性,从而实现对手性增强的目的;另外,由于该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的材料为相变材料,温度改变使得该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的电导率的变化,从而引起本申请的装置的折射率的变化,进而使得圆二色性的光谱发生改变,即本申请可以通过改变温度,实现对CD信号的动态调控,该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45中至少一个的材料为相变材料,即第二纳米棒42和第四纳米棒44是相变材料,第三纳米棒43和第五纳米棒45为参照材料,且该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的相变材料的种类根据实际需要而定,在此不做具体限定,只要该相变材料能实现改变温度使得该相变材料的导电率也发生改变即可。The shapes and sizes of the substrate 10 , the dielectric layer 20 , and the disulfide layer 30 of the adjustable dielectric chiral nano-enhancing device of the present application are determined according to actual needs, and are not specifically limited here. The top of the substrate 10 is provided with the The dielectric layer 20, the upper part of the dielectric layer 20 is provided with a disulfide layer 30, the top of the disulfide layer 30 is provided with a composite structure layer 40, the composite structure layer 40 includes a plurality of nanostructure parts, a plurality of nanostructure parts It is tiled on the top of the dielectric layer 20, so that the top of the dielectric layer 20 forms the composite structure layer 40, because the composite structure layer 40 includes the first nanorods 41, the second nanorods 42, the third nanorods 43, the fourth nanorods The nanorods 44 and the fifth nanorods 45, and the second nanorods 42, the third nanorods 43, the fourth nanorods 44 and the fifth nanorods 45 are respectively inclined around the first nanorods 41. The angles between the nanorods 42, the third nanorods 43, the fourth nanorods 44, the fifth nanorods 45 and the first nanorods 41 are set according to actual needs, and are not specifically limited here. Two nanorods 42 , a third nanorod 43 , a fourth nanorod 44 and a fifth nanorod 45 are respectively disposed on opposite sides of the first nanorod 41 . When the chirality needs to be enhanced, circularly polarized light is used to illuminate the surface of the device, the optical signal generates guided mode resonance between the composite structure layer 40 and the dielectric layer 20 , and generates surface plasmon polarization on the surface of the substrate 10 Excimer resonance, thereby enhancing the thermal loss and surface current of the disulfide layer 30, thereby increasing the interaction between the circularly polarized light and the device of the present application, thereby enhancing the optical chirality of the composite structure layer 40, Thereby, the purpose of enhancing chirality is achieved; in addition, since the materials of the second nanorods 42, the third nanorods 43, the fourth nanorods 44 and the fifth nanorods 45 are phase change materials, the temperature change makes the second nanorods 42. The change of the electrical conductivity of the third nanorod 43, the fourth nanorod 44 and the fifth nanorod 45, thereby causing the change of the refractive index of the device of the present application, and then changing the spectrum of the circular dichroism, that is, the present invention. The application can realize the dynamic regulation of the CD signal by changing the temperature, and the material of at least one of the second nanorods 42, the third nanorods 43, the fourth nanorods 44 and the fifth nanorods 45 is a phase change material, that is, the first The second nanorod 42 and the fourth nanorod 44 are phase change materials, the third nanorod 43 and the fifth nanorod 45 are reference materials, and the second nanorod 42, the third nanorod 43, the fourth nanorod 44 and the The type of the phase change material of the fifth nanorods 45 is determined according to actual needs, and is not specifically limited here, as long as the phase change material can change the temperature so that the conductivity of the phase change material also changes.

本申请提供的装置具体的有益效果为:(1)本申请通过在复合结构层40利用相变材料构造手性图案破坏对称性产生吸收的圆二色性信号。复合结构层40与介质层20产生导模共振,基底10表面产生了表面等离极化激元共振,使得设置在复合结构层40的下表面的二硫化物层30的热损耗和表面电流增强,进而提高了圆偏振光和介质手性纳米装置的相互作用,增强了介质手性纳米装置的光学手性。(2)本发明提供的可调控的介质手性纳米增强装置,通过改变所述的可调控的介质手性纳米增强装置的环境温度,进一步地,相变材料从介质状态变为金属状态,可以动态调控其圆二色性信号。The specific beneficial effects of the device provided by the present application are as follows: (1) The present application generates an absorbed circular dichroism signal by using a phase change material to construct a chiral pattern in the composite structure layer 40 to break the symmetry. The composite structure layer 40 and the dielectric layer 20 generate guided mode resonance, and the surface of the substrate 10 generates surface plasmon resonance, so that the heat loss and surface current of the disulfide layer 30 disposed on the lower surface of the composite structure layer 40 are enhanced. , thereby improving the interaction between circularly polarized light and dielectric chiral nanodevices and enhancing the optical chirality of dielectric chiral nanodevices. (2) The adjustable dielectric chiral nano-enhancing device provided by the present invention, by changing the ambient temperature of the adjustable dielectric chiral nano-enhancing device, further, the phase change material changes from the dielectric state to the metal state, which can be Dynamically modulate its circular dichroism signal.

可选地,该纳米结构部的平行于第一纳米棒41的轴向长度为460nm-500nm,纳米结构部的垂直于第一纳米棒41的轴向长度为460nm-480nm。Optionally, an axial length of the nanostructure portion parallel to the first nanorods 41 is 460 nm-500 nm, and an axial length of the nanostructure portion perpendicular to the first nanorods 41 is 460 nm-480 nm.

该纳米结构部沿着该第一纳米棒41的长度可以为460nm,也可以为500nm,还可以为460nm-500nm之间任意尺寸,该纳米结构部沿着该第一纳米棒41的宽度可以为460nm,也可以为480nm,还可以为460nm-480nm之间任意尺寸。The length of the nanostructure portion along the first nanorod 41 may be 460 nm, 500 nm, or any size between 460 nm and 500 nm, and the width of the nanostructure portion along the first nanorod 41 may be 460nm, can also be 480nm, can also be any size between 460nm-480nm.

第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的角度和长度设置是为了提高整体结构的非对称性,进而增强整个结构的CD信号。加入二硫化物层30可以使整个结构与入射光的耦合增强,进而增强整个结构CD。The angles and lengths of the second nanorods 42 , the third nanorods 43 , the fourth nanorods 44 and the fifth nanorods 45 are set to improve the asymmetry of the overall structure, thereby enhancing the CD signal of the entire structure. The addition of the disulfide layer 30 can enhance the coupling of the entire structure with incident light, thereby enhancing the CD of the entire structure.

可选地,该第二纳米棒42和第三纳米棒43同一点之间的距离为140nm-190nm。Optionally, the distance between the same point of the second nanorod 42 and the third nanorod 43 is 140nm-190nm.

由于该第二纳米棒42和第三纳米棒43设置在该第一纳米棒41的同一侧,且该第二纳米棒42和第三纳米棒43与该第一纳米棒41之间的夹角均相同,即该第二纳米棒42和第三纳米棒43相互平行,为了方便说明该第二纳米棒42和第三纳米棒43的设置位置,则以该第二纳米棒42与第一纳米棒41接触的位置为起点,向该第一纳米棒41的长度方向延伸140nm-190nm之间任意尺寸,设置该第三纳米棒43。Since the second nanorods 42 and the third nanorods 43 are arranged on the same side of the first nanorods 41 , and the angle between the second nanorods 42 and the third nanorods 43 and the first nanorods 41 is All are the same, that is, the second nanorod 42 and the third nanorod 43 are parallel to each other. For the convenience of explaining the setting positions of the second nanorod 42 and the third nanorod 43 The contact position of the rods 41 is the starting point, and the third nanorods 43 are arranged extending to any size between 140 nm and 190 nm in the longitudinal direction of the first nanorods 41 .

可选地,该第四纳米棒44和第五纳米棒45同一点之间的距离为140nm-190nm。Optionally, the distance between the same point of the fourth nanorod 44 and the fifth nanorod 45 is 140nm-190nm.

由于该第四纳米棒44和第五纳米棒45设置在该第一纳米棒41的同一侧,且该第四纳米棒44和第五纳米棒45与该第一纳米棒41之间的夹角均相同,即该第四纳米棒44和第五纳米棒45相互平行,为了方便说明该第四纳米棒44和第五纳米棒45的设置位置,则以该第四纳米棒44与第一纳米棒41接触的位置为起点,向该第一纳米棒41的长度方向延伸140nm-190nm之间任意尺寸,设置该第五纳米棒45。Since the fourth nanorod 44 and the fifth nanorod 45 are arranged on the same side of the first nanorod 41 , and the included angle between the fourth nanorod 44 and the fifth nanorod 45 and the first nanorod 41 All are the same, that is, the fourth nanorod 44 and the fifth nanorod 45 are parallel to each other. The contact position of the rods 41 is the starting point, and the fifth nanorods 45 are arranged to extend any size between 140 nm and 190 nm in the longitudinal direction of the first nanorods 41 .

可选地,该第二纳米棒42的长度与第三纳米棒43的长度不相等,第四纳米棒44的长度与第五纳米棒45的长度不相等。Optionally, the length of the second nanorod 42 is not equal to the length of the third nanorod 43 , and the length of the fourth nanorod 44 is not equal to the length of the fifth nanorod 45 .

为了使得该第二纳米棒42的长度与第三纳米棒43之间的非对称性更强,则将该第二纳米棒42的长度设置的与第三纳米棒43的长度不相等,进而使得增强的手性更强,另外,为了使得该第四纳米棒44的长度与第五纳米棒45之间的非对称性更强,则将该第四纳米棒44的长度设置的与第五纳米棒45的长度不相等,进而使得增强的手性更强,如此设置,进而使得本申请对手性的增强程度更强,In order to make the asymmetry between the length of the second nanorod 42 and the third nanorod 43 stronger, the length of the second nanorod 42 is set to be unequal to the length of the third nanorod 43, so that the The enhanced chirality is stronger. In addition, in order to make the asymmetry between the length of the fourth nanorod 44 and the fifth nanorod 45 stronger, the length of the fourth nanorod 44 is set to be the same as that of the fifth nanorod 45 . The lengths of the rods 45 are not equal, so that the enhanced chirality is stronger, and this setting makes the enhancement degree of the chirality of the present application stronger,

可选地,该第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒与第一纳米棒的侧壁的夹角相等。Optionally, the included angles of the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod and the sidewall of the first nanorod are equal.

在实际应用中,一般第二纳米棒42和第三纳米棒43设置在该第一纳米棒41的一侧,第四纳米棒44和第五纳米棒45设置在该第一纳米棒41的另一侧,一般的,该该第一纳米棒41平行于轴向的长度为380nm-400nm,垂直于轴向长度为90nm-110nm,在实际应用中,将该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45与该第一纳米棒41之间的夹角均设置为相同角度,即该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45相互平行设置,第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的材料为相变材料,即该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45在温度的作用下使得该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45内部的电导率发生改变,在实际应用中,该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的材料为二氧化钒或碲锑锗,使得该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的电导率随着温度的增加电导率增加,反之亦然,在此不做具体赘述,且一般的,该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45在平行于该第一纳米棒41轴向上的投影的长度为50nm-60nm,在垂直于该第一纳米棒41轴向上的投影的长度为80nm-120nm,且该第一纳米棒41、第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45组成的复合结构层40的高度为190nm-210nm,该介质层20的材料的折射率相比于复合结构层40材料的折射率低,进而使得该介质层20可以局域更多光场能量,一般的该介质层20的材料为二氧化硅、二氧化锗、三氧化二铝中的一种或者多种,在实际应用中,该介质层20的厚度为240nm-250nm。In practical applications, generally the second nanorods 42 and the third nanorods 43 are disposed on one side of the first nanorods 41 , and the fourth nanorods 44 and the fifth nanorods 45 are disposed on the other side of the first nanorods 41 . On one side, generally, the length of the first nanorod 41 parallel to the axial direction is 380 nm-400 nm, and the length perpendicular to the axial direction is 90 nm-110 nm. The included angles between the rods 43, the fourth nanorods 44, the fifth nanorods 45 and the first nanorods 41 are all set to the same angle, that is, the second nanorods 42, the third nanorods 43, the fourth nanorods 44 and the fifth nanorod 45 are arranged parallel to each other, and the materials of the second nanorod 42, the third nanorod 43, the fourth nanorod 44 and the fifth nanorod 45 are phase change materials, that is, the second nanorod 42, the The three nanorods 43 , the fourth nanorods 44 and the fifth nanorods 45 make the electrical conductivity inside the second nanorods 42 , the third nanorods 43 , the fourth nanorods 44 and the fifth nanorods 45 under the action of temperature. Changed, in practical applications, the materials of the second nanorods 42 , the third nanorods 43 , the fourth nanorods 44 and the fifth nanorods 45 are vanadium dioxide or tellurium antimony germanium, so that the second nanorods 42 , the electrical conductivity of the third nanorod 43, the fourth nanorod 44 and the fifth nanorod 45 increase with the increase of temperature, and vice versa, do not repeat them here, and generally, the second nanorod 42. The length of the projection of the third nanorod 43, the fourth nanorod 44 and the fifth nanorod 45 parallel to the axis of the first nanorod 41 is 50nm-60nm, and the length of the projection perpendicular to the axis of the first nanorod 41 is 50nm-60nm. The length of the upward projection is 80nm-120nm, and the height of the composite structure layer 40 composed of the first nanorods 41, the second nanorods 42, the third nanorods 43, the fourth nanorods 44 and the fifth nanorods 45 is 190nm-210nm, the refractive index of the material of the dielectric layer 20 is lower than that of the material of the composite structure layer 40, so that the dielectric layer 20 can localize more light field energy, generally the material of the dielectric layer 20 It is one or more of silicon dioxide, germanium dioxide, and aluminum oxide. In practical applications, the thickness of the dielectric layer 20 is 240nm-250nm.

可选地,该第二纳米棒、第三纳米棒、第四纳米棒和第五纳米棒与第一纳米棒的侧壁的夹角不相等。Optionally, the included angles of the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod and the sidewall of the first nanorod are not equal.

可选地,该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45与第一纳米棒41的侧壁的夹角均为45度。Optionally, the included angles between the second nanorods 42 , the third nanorods 43 , the fourth nanorods 44 and the fifth nanorods 45 and the side walls of the first nanorods 41 are all 45 degrees.

当将该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45与第一纳米棒41的侧壁的夹角均设置为45度时,该纳米结构部的非对称性最高,此时CD信号最强,在实际应用中,该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45与第一纳米棒41的侧壁的夹角可以为任意锐角。When the included angles of the second nanorod 42, the third nanorod 43, the fourth nanorod 44 and the fifth nanorod 45 and the sidewall of the first nanorod 41 are all set to 45 degrees, the The asymmetry is the highest, and the CD signal is the strongest at this time. In practical applications, the second nanorod 42 , the third nanorod 43 , the fourth nanorod 44 and the fifth nanorod 45 The included angle can be any acute angle.

可选地,该二硫化物层30的材料为MoS2和/或WS2Optionally, the material of the disulfide layer 30 is MoS 2 and/or WS 2 .

该二硫化物层30的材料可以为MoS2,也可以为WS2,还可以为MoS2和WS2的混合材料,在此不做具体限定。The material of the disulfide layer 30 may be MoS 2 , WS 2 , or a mixed material of MoS 2 and WS 2 , which is not specifically limited herein.

可选地,该基底10的材料为金和/或银。Optionally, the material of the substrate 10 is gold and/or silver.

该基底10的材料可以为金,也可以为银,还可以为金或者银的混合材料,在此不做具体限定。The material of the substrate 10 may be gold, silver, or a mixed material of gold or silver, which is not specifically limited herein.

可选地,该第一纳米棒41的材料为高折射率材料。Optionally, the material of the first nanorods 41 is a high refractive index material.

本申请通过在复合结构层40利用高折射率材料和相变材料构造手性图案破坏对称性产生吸收的圆二色性信号。复合结构层40与介质层20产生导模共振,基底10的上表面产生了表面等离极化激元共振,使得设置在复合结构层40的下表面的二硫化物层30的热损耗和表面电流增强,进而提高了圆偏振光和介质手性纳米装置的相互作用,增强了介质手性纳米装置的光学手性。The present application generates an absorbing circular dichroism signal by constructing a chiral pattern in the composite structure layer 40 with a high refractive index material and a phase change material to break the symmetry. The composite structure layer 40 and the dielectric layer 20 generate guided mode resonance, and the upper surface of the substrate 10 generates surface plasmon resonance, so that the heat loss of the disulfide layer 30 disposed on the lower surface of the composite structure layer 40 and the surface The current is enhanced, which in turn improves the interaction between the circularly polarized light and the dielectric chiral nanodevice, and enhances the optical chirality of the dielectric chiral nanodevice.

为了进一步的说明本申请的装置对手性的增强情况,现在使用数值模拟仿真数据进行说明,具体如下:In order to further illustrate the enhancement of chirality of the device of the present application, the numerical simulation data is now used to illustrate, as follows:

图3为本发明一实施例提供的可调控的介质手性纳米增强装置的CD增强效果图;如图3所示,本发明实施例1在圆偏振光下的激发下,CD光谱强度被显著增强。不加MoS2时,CDCNs在λ=578nm处CD为0.45,在λ=608nm处CD为0.14;其中,模式Ⅰ是基于表面等离极化激元共振得到的,模式ⅠⅠ是基于导模共振得到的。加入MoS2之后,模式Ⅰ和模式ⅠⅠ发生轻微的红移并分别移动至λ=580nm,λ=612nm;模式Ⅰ的CD从0.45被增强至0.8,模式ⅠⅠ的CD从0.14被增强至0.34,模式Ⅰ和模式ⅠⅠ的CD分别被增强了1.78倍和2.43倍。因此,引入MoS2可以不同程度地增强纳米结构分别与LCP光和RCP光之间的相互作用,从而增强整体的CD效应。能量损耗从CDCNs部分转移到MoS2部分,这在MoS2的二维表面上形成很强的表面场,因此在增强催化反应和拉曼散射光谱方面具有一定的潜力,即说明本申请的二硫化物层30可以实现度手性的增强效果。FIG. 3 is a CD enhancement effect diagram of the adjustable dielectric chiral nano-enhancing device provided by an embodiment of the present invention; as shown in FIG. 3 , under the excitation of circularly polarized light in Embodiment 1 of the present invention, the CD spectral intensity is significantly increased enhanced. Without MoS 2 , CDCNs have a CD of 0.45 at λ I = 578 nm and a CD of 0.14 at λ II = 608 nm. Mode I is based on surface plasmon resonance, and mode I is based on guided modes. obtained by resonance. After adding MoS 2 , mode I and mode I I undergo a slight red shift and move to λ I = 580 nm and λ II = 612 nm, respectively; the CD of mode I is enhanced from 0.45 to 0.8, and the CD of mode I is enhanced from 0.14 to 0.34 , the CDs of Mode I and Mode II were enhanced by 1.78 and 2.43 times, respectively. Therefore, the introduction of MoS2 can enhance the interaction between the nanostructures and LCP light and RCP light, respectively, to various degrees, thereby enhancing the overall CD effect. The energy loss is transferred from the CDCNs part to the MoS2 part, which forms a strong surface field on the 2D surface of MoS2, and thus has a certain potential in enhancing the catalytic reaction and Raman scattering spectroscopy, that is, illustrating the disulfide of the present application The material layer 30 can realize the enhancement effect of degree chirality.

图4为本发明一实施例提供的可调控的介质手性纳米增强装置的CD调控效果图; 如图4所示,二硫化物层30的材料为CDCNs/MoS2时,二硫化物中的CD效应的热可调性。如上 所述,VO2的动态调谐性可以通过改变依赖于温度的电导率来模拟。图4研究了VO2具有不同 电导率S下的CD光谱。在模拟中,S从200S/m变化到100000S/m。CD信号随着VO2的变化发生显 著的变化,随着电导率增大,模式Ⅰ和模式ⅠⅠ逐渐减小。调节深度TD定义为

Figure DEST_PATH_IMAGE001
,用于进一步量化CD信号的可调性。模式Ⅰ和模式ⅠⅠ的TD值分别为49.89%和32.35%。这一现 象证实了我们可以通过改变温度来调节CDCNs/MoS2的手性。考虑到当S=200S/m时,两种共 振模式是最容易观察到的,因此我们在本发明上述中保持S值不变。 FIG. 4 is a diagram showing the CD control effect of the adjustable dielectric chiral nano-enhancing device according to an embodiment of the present invention; as shown in FIG. 4 , when the material of the disulfide layer 30 is CDCNs/MoS 2 , the Thermal tunability of the CD effect. As mentioned above, the dynamic tunability of VO2 can be simulated by changing the temperature - dependent conductivity. Figure 4 investigates the CD spectra of VO2 with different conductivities S. In the simulation, S was varied from 200 S/m to 100000 S/m. The CD signal changed significantly with the change of VO2, and the mode I and mode II gradually decreased as the conductivity increased. The adjustment depth TD is defined as
Figure DEST_PATH_IMAGE001
, used to further quantify the tunability of the CD signal. The TD values of mode I and mode II were 49.89% and 32.35%, respectively. This phenomenon confirms that we can tune the chirality of CDCNs /MoS by changing the temperature. Considering that the two resonance modes are most easily observed when S=200S/m, we keep the value of S unchanged in the above-mentioned invention.

图5为本发明另一实施例提供的可调控的介质手性纳米增强装置的CD增强效果图;如图5所示,本发明实施例2在圆偏振光下的激发下,CD光谱强度被显著增强。不加WS2时,CDCNs在λ=578nm处CD为0.45,在λ=608nm处CD为0.14;其中,模式Ⅰ是基于表面等离极化激元共振得到的,模式ⅠⅠ是基于导模共振得到的。加入WS2之后,模式Ⅰ和模式ⅠⅠ发生轻微的红移并分别移动至λ=580nm,λ=608nm;模式Ⅰ的CD从0.45被增强至0.84,模式ⅠⅠ的CD从0.14被增强至0.43,模式Ⅰ和模式ⅠⅠ的CD分别被增强了1.87倍和3.07倍。因此,引入WS2可以不同程度地增强纳米结构分别与LCP光和RCP光之间的相互作用,从而增强整体的CD效应。能量损耗从CDCNs部分转移到WS2部分,这在WS2的二维表面上形成很强的表面场,因此在增强催化反应和拉曼散射光谱方面具有一定的潜力,即说明本申请的二硫化物层30可以实现度手性的增强效果。FIG. 5 is a CD enhancement effect diagram of the adjustable dielectric chiral nano-enhancing device provided by another embodiment of the present invention; as shown in FIG. 5 , under the excitation of circularly polarized light in Embodiment 2 of the present invention, the CD spectral intensity is significantly enhanced. Without WS 2 , CDCNs have a CD of 0.45 at λ I = 578 nm and a CD of 0.14 at λ II = 608 nm. Among them, mode I is obtained based on surface plasmon resonance, and mode I I is based on guided modes. obtained by resonance. After adding WS 2 , the mode I and mode II have a slight red shift and move to λ I = 580 nm and λ II = 608 nm, respectively; the CD of mode I is enhanced from 0.45 to 0.84, and the CD of mode II is enhanced from 0.14 to 0.43 , the CD of mode I and mode II were enhanced by 1.87 times and 3.07 times, respectively. Therefore, the introduction of WS2 can enhance the interaction between the nanostructures and LCP light and RCP light, respectively, to different degrees, thereby enhancing the overall CD effect. The energy loss is transferred from the CDCNs part to the WS part, which forms a strong surface field on the 2D surface of WS and thus has a certain potential in enhancing the catalytic reaction and Raman scattering spectroscopy, that is, illustrating the disulfide of the present application The material layer 30 can realize the enhancement effect of degree chirality.

图6为本发明另一实施例提供的可调控的介质手性纳米增强装置的CD调控效果 图;如图6所示,接下来研究了CDCNs/WS2中CD效应的热可调性。如上所述,VO2的动态调谐性 可以通过改变依赖于温度的电导率来模拟。图6研究了VO2不同电导率S下的CD光谱。在模拟 中,S从200S/m变化到100000S/m。CD信号随着VO2的变化发生显著的变化,随着电导率增大, 模式Ⅰ逐渐减小,模式ⅠⅠ轻微增大。调节深度TD定义为

Figure 292721DEST_PATH_IMAGE002
,用于进一 步量化CD信号的可调性。模式Ⅰ和模式ⅠⅠ的TD值分别为65.48%和41.86%。这一现象证实了我 们可以通过改变温度来调节CDCNs/WS2的手性。考虑到当S=200S/m时,两种共振模式是最容 易观察到的,因此我们在本发明上述中保持S值不变。综述本申请可以实现通过改变温度实 现对本申请的装置的手性的调控。 Figure 6 is a diagram of the CD regulation effect of the tunable dielectric chiral nano-enhanced device provided by another embodiment of the present invention; as shown in Figure 6, the thermal tunability of the CD effect in CDCNs/WS 2 is studied next. As mentioned above, the dynamic tunability of VO2 can be simulated by changing the temperature - dependent conductivity. Figure 6 investigates the CD spectra of VO under different conductivities S. In the simulation, S was varied from 200 S/m to 100000 S/m. The CD signal changes significantly with the change of VO 2 . With the increase of conductivity, mode I gradually decreases, and mode II increases slightly. The adjustment depth TD is defined as
Figure 292721DEST_PATH_IMAGE002
, used to further quantify the tunability of the CD signal. The TD values of mode I and mode II were 65.48% and 41.86%, respectively. This phenomenon confirms that we can tune the chirality of CDCNs /WS by changing the temperature. Considering that the two resonance modes are most easily observed when S=200S/m, we keep the value of S unchanged in the above-mentioned invention. Overview The present application can realize the regulation of the chirality of the device of the present application by changing the temperature.

本申请提供可调控的介质手性纳米增强装置,装置包括:基底10、介质层20、二硫化物层30和复合结构层40;介质层20设置在基底10的一侧,二硫化物层30设置在介质层20远离基底10的一侧,复合结构层设置在二硫化物层30远离基底10的一侧,复合结构层包括多个纳米结构部,每个纳米结构部均包括第一纳米棒41、第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45,第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45均倾斜设置在第一纳米棒41的侧壁上,且第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45中至少一个的材料为相变材料;当需要对手性进行增强时,使用圆偏振光照射该装置的表面,该光信号在该复合结构层40与介质层20之间产生导模共振,使得该基底10的上表面产生表面等离极化激元共振,进而使得该二硫化物层30的热损耗和表面电流增强,进而使得圆偏振光和本申请的装置之间的相互作用得到增加,从而增强该复合结构层40的光学手性,从而实现对手性增强的目的;另外,由于该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的材料为相变材料,温度改变使得该第二纳米棒42、第三纳米棒43、第四纳米棒44和第五纳米棒45的电导率的变化,从而引起本申请的装置的折射率的变化,进而使得圆二色性的光谱发生改变,即本申请可以通过改变温度,实现对CD信号的动态调控。The present application provides a controllable dielectric chiral nano-enhancing device, the device includes: a substrate 10, a dielectric layer 20, a disulfide layer 30 and a composite structure layer 40; the dielectric layer 20 is disposed on one side of the substrate 10, and the disulfide layer 30 It is arranged on the side of the dielectric layer 20 away from the substrate 10, and the composite structure layer is arranged on the side of the disulfide layer 30 away from the substrate 10. The composite structure layer includes a plurality of nanostructure parts, and each nanostructure part includes a first nanorod. 41, the second nanorod 42, the third nanorod 43, the fourth nanorod 44 and the fifth nanorod 45, the second nanorod 42, the third nanorod 43, the fourth nanorod 44 and the fifth nanorod 45 are all It is obliquely arranged on the side wall of the first nanorod 41, and the material of at least one of the second nanorod 42, the third nanorod 43, the fourth nanorod 44 and the fifth nanorod 45 is a phase change material; When the property is enhanced, circularly polarized light is used to illuminate the surface of the device, and the optical signal generates guided mode resonance between the composite structure layer 40 and the dielectric layer 20, so that surface plasmon polaritons are generated on the upper surface of the substrate 10 resonance, thereby enhancing the thermal loss and surface current of the disulfide layer 30, thereby increasing the interaction between the circularly polarized light and the device of the present application, thereby enhancing the optical chirality of the composite structure layer 40, thereby achieving The purpose of chirality enhancement; in addition, since the materials of the second nanorods 42, the third nanorods 43, the fourth nanorods 44 and the fifth nanorods 45 are phase change materials, the temperature changes make the second nanorods 42, The change of the electrical conductivity of the third nanorod 43 , the fourth nanorod 44 and the fifth nanorod 45 causes the change of the refractive index of the device of the present application, thereby changing the spectrum of circular dichroism, that is, the present application can By changing the temperature, the dynamic regulation of CD signal is realized.

本申请提供一种可调控的介质手性纳米增强系统,系统包括:温度控制装置、手性分子溶液、光谱仪和上述任意一项的可调控的介质手性纳米增强装置,温度控制装置设置在装置的复合结构层40的外部,用于改变复合结构层40的温度,分子溶液填充设置在复合结构层40的缝隙中,光谱仪用于对装置的出射光的光谱进行检测。The present application provides a controllable medium chiral nano-enhancing system, the system includes: a temperature control device, a chiral molecular solution, a spectrometer and any one of the above-mentioned adjustable medium chiral nano-enhancing device, the temperature control device is arranged in the device The outside of the composite structure layer 40 is used to change the temperature of the composite structure layer 40, the molecular solution is filled in the gap of the composite structure layer 40, and the spectrometer is used to detect the spectrum of the emitted light of the device.

本发明提供的可调控的复合介质手性纳米增强系统,通过在复合结构层40上方覆盖设置一层手性分子溶液,在圆偏振光的激发下,手性分子的手性信号被强烈放大,通过光谱仪对左旋圆光和右旋圆光的检测,得到手性的增强情况。The controllable composite medium chiral nano-enhancing system provided by the present invention, by covering a layer of chiral molecule solution on the composite structure layer 40, under the excitation of circularly polarized light, the chiral signal of the chiral molecule is strongly amplified, The enhancement of chirality is obtained by the detection of left-handed circular light and right-handed circular light by spectrometer.

以上仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above are only preferred embodiments of the present invention, and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims (10)

1. A tunable, chiral nanoenhanced device of a medium, the device comprising: the device comprises a substrate, a dielectric layer, a disulfide layer and a composite structure layer; the dielectric layer is arranged on one side of the substrate, the disulfide layer is arranged on one side of the dielectric layer far away from the substrate, the composite structure layer is arranged on one side of the disulfide layer far away from the substrate, the composite structure layer comprises a plurality of nanostructure parts, each nanostructure part comprises a first nanorod, a second nanorod, a third nanorod, a fourth nanorod and a fifth nanorod, the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod are obliquely arranged on the side wall of the first nanorod, and at least one of the second nanorod, the third nanorod, the fourth nanorod and the fifth nanorod is made of a phase-change material; the second nanorod and the third nanorod are arranged on the same side of the first nanorod, an included angle between the second nanorod and the third nanorod and the first nanorod is the same, the fourth nanorod and the fifth nanorod are arranged on the other side of the first nanorod, and an included angle between the fourth nanorod and the fifth nanorod is the same as that between the first nanorod.
2. The tunable, dielectric chiral nanoenhancer device of claim 1, wherein the axial length of the nanostructure portion parallel to the first nanorods is 460nm to 500nm, and the axial length of the nanostructure portion perpendicular to the first nanorods is 460nm to 480 nm.
3. The tunable, media-chiral nanoenhanced device of claim 2, wherein the distance between the same point of the second nanorods and the third nanorods is 140nm-190 nm.
4. The tunable chiral nanoenhancer device of claim 3, wherein the distance between the same point of the fourth nanorods and the fifth nanorods is 140nm-190 nm.
5. The tunable chiral nanoenhancer device of claim 4, wherein the second nanorods have a length unequal to that of the third nanorods, and the fourth nanorods have a length unequal to that of the fifth nanorods.
6. The tunable chiral media nanoenhancer device of claim 5, wherein the second, third, fourth and fifth nanorods are all at 45 ° angles to the sidewall of the first nanorod.
7. The tunable chiral media nanoenhancer device of claim 6, wherein the disulfide layer is MoS 2 And/or WS 2
8. The tunable media chiral nanoenhancer device of claim 7, wherein the substrate is gold and/or silver.
9. The tunable, dielectric, chiral nanoenhancer device of claim 8, wherein the material of said first nanorods is a high refractive index material.
10. A regulatable media chiral nanoenhancement system, said system comprising: the device comprises a temperature control device, a chiral molecular solution, a spectrometer and the adjustable and controllable medium chiral nanometer enhancement device as claimed in any one of claims 1 to 9, wherein the temperature control device is arranged outside a composite structure layer of the device and used for changing the temperature of the composite structure layer, the molecular solution is filled in a gap of the composite structure layer, and the spectrometer is used for detecting the spectrum of emergent light of the device.
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