CN113500535B - Composite binder grinding wheel for processing large-size silicon carbide substrate and preparation method thereof - Google Patents
Composite binder grinding wheel for processing large-size silicon carbide substrate and preparation method thereof Download PDFInfo
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- CN113500535B CN113500535B CN202110683096.6A CN202110683096A CN113500535B CN 113500535 B CN113500535 B CN 113500535B CN 202110683096 A CN202110683096 A CN 202110683096A CN 113500535 B CN113500535 B CN 113500535B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0009—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using moulds or presses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
- B24D18/0072—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for using adhesives for bonding abrasive particles or grinding elements to a support, e.g. by gluing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/34—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties
- B24D3/342—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents characterised by additives enhancing special physical properties, e.g. wear resistance, electric conductivity, self-cleaning properties incorporated in the bonding agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D5/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor
- B24D5/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting only by their periphery; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
- B24D7/06—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor with inserted abrasive blocks, e.g. segmental
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Abstract
The invention discloses a composite bond grinding wheel for processing a large-size silicon carbide substrate and a preparation method thereof, and particularly relates to a formula and a preparation method of a composite bond superhard material grinding wheel for processing a silicon carbide semiconductor material. The formula mainly comprises 25-45% of diamond abrasive, 25-40% of pre-alloy powder, 8-20% of polyphenylene sulfide, 10-18% of zinc oxide whisker and 8-22% of SG abrasive. The preparation method adopts the polyphenylene sulfide and the zinc-copper alloy powder as a composite binder system, and the binder system has strong holding force on the abrasive, resists the high grinding resistance of large-size silicon carbide and has strong grinding force. The iron, the aluminum and the like refine the grain structure of the alloy system, increase the brittleness and improve the grinding sharpness of the grinding wheel. Meanwhile, the utilization of whiskers and the like can increase the isotropy of the microstructure of the grinding wheel layer, obtain a better homogeneous state and solve the problem of grinding stability of the silicon carbide substrate. The processing problem of the large-size silicon carbide substrate is thoroughly solved.
Description
Technical Field
The invention belongs to the field of super-hard abrasive tools, and particularly relates to a composite bonding agent grinding wheel for processing a large-size silicon carbide substrate and a preparation method thereof.
Technical Field
The wide-bandgap semiconductor material represented by silicon carbide has the outstanding advantages of higher saturation drift velocity, higher critical breakdown voltage and the like, and is suitable for high-power, high-temperature, high-frequency and anti-radiation application occasions. The research on SiC in various countries in the world is very important, and a great amount of manpower and material resources are invested in the research and the development, so that the corresponding research plans are made in the national level in the United states, Europe, Japan and the like, and a great deal of capital is invested in the development of silicon carbide semiconductor devices in some international electronic industries. Compared with the characteristics of low hardness and large brittleness of the first-generation semiconductor silicon material, the Mohs hardness of the silicon carbide crystal material reaches 9.5, the hardness is second to that of diamond, the strength is higher, and the processing difficulty is higher.
The Mohs hardness of the silicon carbide material is second to that of diamond, so that the grinding processing difficulty is unusual. The conventional grinding wheel formula system is very low in yield because the wafer breakage caused by high grinding difficulty is often caused when the silicon carbide substrate material is processed, and the silicon carbide substrate material is very high in cost because the crystal growth difficulty is high. With the more and more approved performance advantages of silicon carbide, the application of the silicon carbide is continuously expanded, and the popularization requirement on the silicon carbide substrate processing industrialization is higher and higher. According to Yolo, only the conducting silicon carbide substrate is expected to increase the market demand of 6 chips to 20 chips in 2020-.
The size of the silicon carbide substrate is increased from 4 inches to 6 inches, the grinding area is doubled, the grinding resistance is doubled, and the grinding heat is increased. The grinding of the large-size silicon carbide substrate not only requires a higher holding force of the bonding agent on the grinding material, but also requires the heat resistance of the bonding agent system to be improved. Meanwhile, the silicon carbide material is a brittle material, and the grinding wheel is required to have enough sharpness and self-sharpening property during processing so as to avoid the damage of splintering and the like caused by extrusion and the like. The common resin binder grinding wheel cannot resist high grinding resistance due to low strength of resin materials, and the common bronze series metal binder grinding wheel has the problems of high toughness, low brittleness, self-sharpening property of the grinding wheel, easy generation of grinding wheel blockage, burning and the like during grinding.
The preparation method adopts the polyphenylene sulfide and the zinc-copper alloy powder as a composite binder system, and the binder system has strong holding force on the abrasive, resists the high grinding resistance of large-size silicon carbide and has strong grinding force. The copper-zinc alloy powder system has poor toughness and ductility, and alloy elements such as iron and aluminum are added to form four alloy systems, so that the grain structure of the alloy system is refined, the brittleness is increased, and the grinding sharpness of the grinding wheel is improved. Meanwhile, the utilization of whiskers and the like can increase the isotropic performance of the grinding wheel, obtain a better homogeneous state and solve the problem of grinding stability of the silicon carbide substrate. The composite bonding agent adopted by the invention has the advantages of two bonding agents, and provides a solution for processing a large-size silicon carbide substrate.
In conclusion, the invention aims to provide the grinding wheel for processing the large-size silicon carbide substrate and the preparation method thereof, the prepared grinding wheel has good self-sharpening performance and good isotropic uniformity, the grinding processing requirement of the large-size silicon carbide substrate can be met, and related researches are not reported.
Disclosure of Invention
The invention aims to provide a composite bonding agent grinding wheel for processing a large-size silicon carbide substrate and a preparation method thereof.
Based on the purpose, the invention adopts the following technical scheme:
the composite bond grinding wheel for processing the large-size silicon carbide substrate comprises a base body and a grinding layer, wherein the grinding layer comprises, by weight, 25-45% of diamond grinding materials, 25-40% of mixed powder, 8-20% of polyphenylene sulfide, 10-18% of zinc oxide whiskers and 8-22% of SG grinding materials, the mixed powder comprises zinc, copper, iron, aluminum and graphite, the particle size of the mixed powder is 3-6 mu m, and the mixed powder comprises the following raw materials in percentage by mass: 60-70% of zinc powder, 15-20% of copper powder, 0.5-3% of aluminum powder, 6-13% of graphite and the balance of iron powder.
Further, the particle size of the polyphenylene sulfide is 30-80 μ M, the diamond abrasive is titanium-plated diamond with the abrasive particle size of 200/230-M24/32 and TTI >75, the plating shell thickness is 300-500nm, and the SG abrasive is finer than the diamond abrasive by four particle size numbers.
Further, the total content of iron and aluminum in the mixed powder is within 10%, and the mass ratio of iron to aluminum is 3: 1. The iron powder in the mixed powder is indispensable and has eutectic reaction with zinc and aluminum metal to generate an alloy phase state gamma with HRB between 30 and 40, the phase state has the characteristics of low hardness and high brittleness, the crystal grains of the structure can be refined to form a microcrystalline structure granular structure, the bonding agent can fall off in a granular mode during grinding, the cutting effect of diamond is improved, and the grinding capacity of the grinding wheel is high.
Further, the preparation process of the mixed powder comprises the following steps: the method comprises the steps of vibrating zinc powder, copper powder, aluminum powder and iron powder for 10-30min by adopting a high-frequency vibrating screen (2000 times/min), then adding graphite, then placing a mixture into a wall breaking machine, adding liquid nitrogen with the mass ratio of the mixed powder being 10%, mixing at the rotating speed of 20000-40000rpm, and carrying out refining treatment for 2-6h to obtain mixed powder with the granularity of 3-6 mu m.
Furthermore, the matrix of the grinding wheel is a combined matrix, the matrix is composed of a metal structure (steel, aluminum, copper and other common metal structures) and a rubber structure, the rubber layer is made of silicon rubber, the thickness of the rubber layer of the matrix is 3-6mm, the width of the rubber layer of the matrix is 8mm, the outer diameter of the rubber layer is 150mm, and the rubber layer is next to the grinding layer.
Furthermore, the zinc oxide whisker in the bonding agent is a tetrapod-like zinc oxide whisker which has a three-dimensional tetrapod-like three-dimensional structure, and the length of a needle-like body of the whisker is 20-45 mu m.
The preparation method of the composite bonding agent grinding wheel for processing the large-size silicon carbide substrate comprises the following steps:
(1) the method comprises the following steps of (1) passing diamond grinding materials and SG grinding materials through a standard sieve with four particle sizes coarser than the diamond grinding materials for 2-4 times, adding a white dextrin water solution with the mass ratio of 4-6% and the concentration of 45-55 wt% according to the total weight of the diamond grinding materials and the SG grinding materials, placing the mixture into a high-frequency vibrating sieve for vibrating for 20-40 min, and taking out for later use;
(2) adding mixed powder, polyphenylene sulfide and zinc oxide whiskers into a three-dimensional mixer, rotating at 1000-1500 rpm, adding zirconia balls (the particle sizes of the zirconia balls are distributed according to the mass ratio of 20% from 3mm, 5mm, 10mm, 15mm and 20 mm) accounting for 30% of the total mass of the mixed powder, the polyphenylene sulfide and the zinc oxide, and vibrating for 2-4 h to obtain a bonding agent;
(3) mixing the materials obtained in the steps (1) and (2), putting the materials into a planetary mixer, ball-mixing for 1.5-2.5 h, and then sieving for 3 times by a 200-mesh standard sieve to obtain a grinding wheel molding material;
(4) pouring the uniformly mixed molding materials into a square mold, placing the square mold on a hot press with a vacuum device and a temperature of 260 ℃ for prepressing, wherein the prepressing pressure is 40-60 MPa, vacuumizing to below-0.06 MPa, placing for a certain time (generally 20-40 minutes), then taking down the square mold from the hot press, transferring the square mold to a microwave sintering furnace, heating the microwave sintering to 450 ℃ with the temperature of 350 ℃ and the temperature of 6-6 hours according to the heating rate of 12-18 ℃/min, taking out, and cooling to room temperature to obtain a semi-finished grinding wheel;
(5) cutting the semi-finished grinding wheel into arc blocks with the arc degree of 110 degrees and the chord length of 10mm by water cutting, then obtaining the grinding wheel blocks through a grinding procedure,
(6) and (3) bonding the grinding wheel block to the rubber matrix by using the organic silicon adhesive, and processing the grinding wheel block into the required precision to obtain the grinding wheel for processing the large-size silicon carbide substrate.
Wherein, the power used by the microwave sintering furnace in the step (4) is 3 kW. The heating rate is ensured, so that the brittle phase state of fine grains required by the grinding wheel can be formed at the heating rate.
The diamond abrasive in the application is titanium-plated diamond, the thickness of the plating shell is 300-500nm, the plating layer can perform alloying reaction with copper metal in alloy powder, the holding capacity of a binding agent on the abrasive is improved, the grinding resistance is increased, and the problems of grinding wheel blockage, workpiece fragment and the like caused by abnormal falling of the abrasive are solved.
Compared with the common resin binder material, the resin material has the characteristic of high brittleness due to more benzene ring structures on the polyphenylene sulfide molecular chain, can be subjected to brittle peeling during grinding, reduces the problem of grinding blockage and extension, and improves the sharpness of the grinding wheel; and the polyphenylene sulfide has high heat-resistant temperature, the thermal decomposition temperature after curing is above 550 ℃, and the problem of bonding agent failure caused by grinding heat during grinding can be solved.
The zinc oxide whiskers in the bonding agent are tetrapod-like zinc oxide whiskers which have a three-dimensional tetrapod-like three-dimensional structure, so that the anisotropy of the material is improved, and a grinding wheel layer structure with better isotropy is obtained. And the special nano activity of the tip of the grinding wheel plays a role in damping and reducing grinding impact force.
The preparation method adopts the polyphenylene sulfide, zinc copper and other alloy powder as a composite binder system, and the binder system has strong holding force on the abrasive, resists the high grinding resistance of large-size silicon carbide and has strong grinding force. The iron, the aluminum and the like refine the grain structure of the alloy system, increase the brittleness and improve the grinding sharpness of the grinding wheel. Meanwhile, the utilization of whiskers and the like can increase the isotropy of the microstructure of the grinding wheel layer, obtain a better homogeneous state and solve the problem of grinding stability of the silicon carbide substrate. The processing problem of the large-size silicon carbide substrate is thoroughly solved.
Drawings
FIG. 1 is a scanning electron microscope image of the phase γ of the fine grain structure of the semi-finished product after the grinding wheel was fired in the example.
Detailed Description
The technical solution of the present invention will be described in detail by specific examples.
The zinc oxide whiskers in the following examples were purchased from Shanghai Kai Yifeng industries, Ltd; the model is as follows: HB-PZ001, the length of the needle-like body of zinc oxide is 20-45 μm. The diamond abrasive in the following examples is a single crystal high strength diamond abrasive with a diamond abrasive particle size of 200/230-M15/25, a diamond abrasive TTI >75, and the abrasive is titanium-plated diamond with a plating shell thickness of 300-500 nm. The polyphenylene sulfide particle size was 30 to 80 μm, and the SG abrasive in each example was four size numbers finer than the diamond abrasive in this example.
Example 1
A composite binder grinding wheel for processing a large-size silicon carbide substrate is mainly used for processing large-size silicon carbide substrate materials, and comprises a base body and a grinding layer, wherein the grinding layer comprises the following raw materials in percentage by weight: the granularity is 325/400, the diamond abrasive material of TTI76, the mixed powder is 32 percent, the polyphenylene sulfide is 20 percent, the zinc oxide whisker is 15 percent, and the SG abrasive material is 8 percent.
The mixed powder is obtained by the following processes: mixing 62% of zinc powder, 18.2% of copper powder, 2.2% of aluminum powder and 6.6% of iron powder by mass percent, vibrating for 30min for 2000 times/min by adopting a high-frequency vibrating screen, then adding 11% of graphite, then putting the mixture into a liquid nitrogen cooling wall breaking machine (manufacturer: model of a multi-Mongolian wall breaking machine: LM-388, the same below) with the rotation speed of 40000rpm, adding liquid nitrogen with the mass ratio of the mixed powder of 10%, mixing and refining for 5h to obtain mixed powder with the granularity of 3-4 mu m.
The grinding wheel is characterized in that a base body of the grinding wheel is a combined base body, the base body is composed of a steel metal structure and a rubber structure, a rubber layer is made of silicon rubber, the thickness of the rubber layer of the base body is 6mm, the width of the rubber layer is 8mm, the outer diameter of the rubber layer is 300mm, and the rubber layer is close to a grinding layer.
The preparation method of the composite bond grinding wheel comprises the following steps:
(1) the diamond grinding material and the SG grinding material pass through a standard sieve with four granularity numbers which are coarser than the diamond grinding material for 3 times, white dextrin water solution with the mass ratio of 5% and the concentration of 50wt% is added according to the total weight of the diamond grinding material and the SG grinding material, the mixture is placed into a high-frequency vibrating sieve, the mixture is vibrated for 30min for 2000 times/min, and the mixture is taken out for standby;
(2) adding the mixed powder, the polyphenylene sulfide and the zinc oxide whisker into a three-dimensional mixer, rotating at 1200rpm, adding zirconia balls with the mass ratio of 30% (the particle sizes of the zirconia balls are distributed according to the mass ratio of 20% from the particle sizes of 3mm, 5mm, 10mm, 15mm and 20 mm), and vibrating for 3h to obtain a bonding agent;
(3) mixing the materials obtained in the steps (1) and (2), putting the mixture into a planetary mixer for ball mixing for 2 hours, and then sieving the mixture for 3 times by a 200-mesh standard sieve to obtain a grinding wheel molding material;
(4) pouring the uniformly mixed molding material into a square mold (length, width, height =220mm x 200mm x 60 mm), placing the square mold on a 245 ℃ hot press with vacuum for prepressing, wherein the prepressing pressure is 50MPa, placing the square mold for 30min after vacuumizing to-0.06 MPa, then taking the square mold from the hot press and transferring the square mold to a microwave sintering furnace (the power is 3 kW), heating the square mold to 420 ℃ according to the heating rate of 14 ℃/min for microwave sintering, preserving the heat for 3h, taking the square mold out, and cooling to room temperature to obtain a semi-finished grinding wheel, wherein a scanning electron microscope photo of the semi-finished grinding wheel is shown in figure 1, and a eutectic reaction is generated between metal powder due to the action of temperature after firing to obtain a new phase gamma phase.
(5) Cutting the semi-finished grinding wheel into arc blocks with the arc degree of 110 degrees and the chord length of 10mm by adopting water cutting, and then obtaining the grinding wheel blocks through a grinding process;
(6) and (3) bonding the grinding wheel block to the rubber matrix by using the organic silicon adhesive, and processing the grinding wheel block into the required precision to obtain the grinding wheel for processing the large-size silicon carbide substrate.
The wheel of example 1 was subjected to a grinding test of a 6 "silicon carbide substrate piece. Specific experimental items: grinding 6 inches of substrate slices on an ACCRETECH thinning machine, wherein the rotating speed of the machine tool is 1500rpm, the feeding speed is 0.3 mu m/s, the grinding quantity is 220 mu m, the surface of a workpiece has no abnormity such as burn, crack and breakage, the surface TTV value is within 3 mu m, and the grinding wheel can continuously work until the grinding wheel is used up, and the process is not finished, which shows that the grinding wheel has good grinding sharpness and can obtain better surface quality.
Example 2
A composite binder grinding wheel for processing a large-size silicon carbide substrate is mainly used for processing large-size silicon carbide substrate materials, and comprises a base body and a grinding layer, wherein the grinding layer comprises the following raw materials in percentage by weight: 45 percent of diamond abrasive with the granularity of M34/42 and 77.5 TTI, 25 percent of mixed powder, 8 percent of polyphenylene sulfide, 12 percent of zinc oxide whisker and 10 percent of SG abrasive.
The mixed powder is obtained by the following processes: by mass percentage, 70% of zinc powder, 15% of copper powder, 0.5% of aluminum powder and 1.5% of iron powder are vibrated for 10min for 2000 times/min by adopting a high-frequency vibrating screen, then 13% of graphite is added, then the mixture is placed into a liquid nitrogen cooling wall breaking machine with the rotating speed of 20000rpm, liquid nitrogen with the mass ratio of the mixed powder being 10% is added, and the mixture is mixed and refined for 2h to obtain the mixed powder with the granularity of 4-6 microns.
The grinding wheel is characterized in that a base body of the grinding wheel is a combined base body, the base body is composed of a metal structure and a rubber structure, a rubber layer is made of silicon rubber, the thickness of the rubber layer of the base body is 3mm thick, the width of the rubber layer is 8mm, the outer diameter of the rubber layer is 150mm, and the rubber layer is next to a grinding layer.
The preparation method of the composite bond grinding wheel comprises the following steps:
(1) the diamond grinding material and the SG grinding material pass through a standard sieve with four granularity numbers which are coarser than the diamond grinding material for 3 times, white dextrin water solution with the mass ratio of 5% and the concentration of 50wt% is added according to the total weight of the diamond grinding material and the SG grinding material, the mixture is placed into a high-frequency vibrating sieve, the mixture is vibrated for 30min for 2000 times/min, and the mixture is taken out for standby;
(2) adding the mixed powder, the polyphenylene sulfide and the zinc oxide whisker into a three-dimensional mixer, rotating at 1200rpm, adding zirconia balls with the mass ratio of 30% (the particle sizes of the zirconia balls are distributed according to the mass ratio of 20% from the particle sizes of 3mm, 5mm, 10mm, 15mm and 20 mm), and vibrating for 3h to obtain a bonding agent;
(3) mixing the materials obtained in the steps (1) and (2), putting the mixture into a planetary mixer for ball mixing for 2 hours, and then sieving the mixture for 3 times by a 200-mesh standard sieve to obtain a grinding wheel molding material;
(4) pouring the uniformly mixed molding materials into a square mold (length, width, height =220mm × 200mm × 60 mm), placing on a vacuum hot press at 230 ℃ for prepressing at 50MPa, vacuumizing to-0.06 MPa, and standing for 30 min. Then taking down the grinding wheel from the hot press and transferring the grinding wheel to a microwave sintering furnace (the power is 3 kW), heating the grinding wheel to 400 ℃ according to the heating rate of 15 ℃/min in the microwave sintering process, preserving the heat for 2 hours, taking out the grinding wheel, and cooling the grinding wheel to room temperature to obtain a semi-finished grinding wheel;
(5) cutting the semi-finished grinding wheel into arc blocks with the arc degree of 110 degrees and the chord length of 10mm by adopting water cutting, and then obtaining the grinding wheel blocks through a grinding process;
(6) and (3) bonding the grinding wheel block to the rubber matrix by using the organic silicon adhesive, and processing the grinding wheel block into the required precision to obtain the grinding wheel for processing the large-size silicon carbide substrate.
The wheel of example 2 was subjected to a grinding test of a 6 "silicon carbide substrate piece. Specific experimental items: grinding 6 inches of substrate slices on an ACCRETECH thinning machine, wherein the machine tool rotates at 1800rpm, the feeding speed is 0.26 mu m/s, the grinding quantity is 240 mu m, the surface of a workpiece has no abnormity such as burn, crack and breakage, the surface TTV value is within 2.8 mu m, and the grinding wheel can continuously work until the grinding wheel is used up, and the process is not finished, which shows that the grinding wheel has good grinding sharpness and can obtain better surface quality.
Example 3
A composite binder grinding wheel for processing a large-size silicon carbide substrate is mainly used for processing large-size silicon carbide substrate materials, and comprises a base body and a grinding layer, wherein the grinding layer comprises the following raw materials in percentage by weight: 30% of diamond abrasive with the granularity of 270/325 and 75.8 TTI, 40% of mixed powder, 10% of polyphenylene sulfide, 8% of zinc oxide whisker and 12% of SG abrasive.
The mixed powder is obtained by the following processes: according to the mass percentage, 65% of zinc powder, 18% of copper powder, 2% of aluminum powder and 6% of iron powder are vibrated for 15min at a speed of 2000 times/min by adopting a high-frequency vibrating screen, 9% of graphite is added, the mixture is placed into a liquid nitrogen cooling wall breaking machine with the rotating speed of 30000rpm, liquid nitrogen with the mass ratio of the mixed powder being 10% is added, and the mixture is mixed and refined for 5h to obtain the mixed powder with the granularity of 3-5 mu m.
The grinding wheel is characterized in that a base body of the grinding wheel is a combined base body, the base body is composed of a metal structure and a rubber structure, a rubber layer is made of silicon rubber, the thickness of the rubber layer of the base body is 5mm thick, the width of the rubber layer is 8mm, the outer diameter of the rubber layer is 200mm, and the rubber layer is close to a grinding layer.
The preparation method of the composite bond grinding wheel comprises the following steps:
(1) the diamond grinding material and the SG grinding material pass through a standard sieve with four granularity numbers which are coarser than the diamond grinding material for 3 times, white dextrin water solution with the mass ratio of 5% and the concentration of 50wt% is added according to the total weight of the diamond grinding material and the SG grinding material, the mixture is placed into a high-frequency vibrating sieve, the mixture is vibrated for 30min for 2000 times/min, and the mixture is taken out for standby;
(2) adding the mixed powder, the polyphenylene sulfide and the zinc oxide whisker into a three-dimensional mixer, rotating at 1200rpm, adding zirconia balls with the mass ratio of 30% (the particle sizes of the zirconia balls are distributed according to the mass ratio of 20% from the particle sizes of 3mm, 5mm, 10mm, 15mm and 20 mm), and vibrating for 3h to obtain a bonding agent;
(3) mixing the materials obtained in the steps (1) and (2), putting the mixture into a planetary mixer for ball mixing for 2 hours, and then sieving the mixture for 3 times by a 200-mesh standard sieve to obtain a grinding wheel molding material;
(4) pouring the uniformly mixed molding materials into a square mold (length, width, height =220mm × 200mm × 60 mm), placing on a hot press with vacuum at 220 ℃ for prepressing at 50MPa, vacuumizing to-0.06 MPa, and standing for 30 min. Then taking down the grinding wheel from the hot press and transferring the grinding wheel to a microwave sintering furnace (the power is 3 kW), heating the microwave sintering furnace to 430 ℃ according to the heating rate of 12 ℃/min, preserving the heat for 4h, taking out the grinding wheel, and cooling the grinding wheel to room temperature to obtain a semi-finished grinding wheel;
(5) cutting the semi-finished grinding wheel into arc blocks with the arc degree of 110 degrees and the chord length of 10mm by adopting water cutting, and then obtaining the grinding wheel blocks through a grinding process;
(6) and (3) bonding the grinding wheel block to the rubber matrix by using the organic silicon adhesive, and processing the grinding wheel block into the required precision to obtain the grinding wheel for processing the large-size silicon carbide substrate.
The wheel of example 3 was subjected to a grinding test of a 6 "silicon carbide substrate piece. Specific experimental items: grinding 6 inches of substrate slices on an ACCRETECH thinning machine, wherein the machine tool rotates at 1600rpm, the feeding speed is 0.22 mu m/s, the grinding quantity is 300 mu m, the surface of a workpiece has no abnormity such as burn, crack and breakage, the surface TTV value is within 2.5 mu m, and the grinding wheel can continuously work until the grinding wheel is used up, and the process is not finished, which shows that the grinding wheel has good grinding sharpness and can obtain better surface quality.
Example 4
A composite binder grinding wheel for processing a large-size silicon carbide substrate is mainly used for processing large-size silicon carbide substrate materials, and comprises a base body and a grinding layer, wherein the grinding layer comprises the following raw materials in percentage by weight: the grain size is 230/270, the TTI76.2 diamond abrasive 32%, the mixed powder is 30%, the polyphenylene sulfide is 12%, the zinc oxide whisker is 10%, and the SG abrasive is 16%.
The mixed powder is obtained by the following processes: 68% of zinc powder, 18% of copper powder, 1% of aluminum powder and 3% of iron powder are vibrated for 20min at a speed of 2000 times/min by adopting a high-frequency vibrating screen, 10% of graphite is added, the mixture is placed into a liquid nitrogen cooling wall breaking machine at a rotating speed of 35000rpm, liquid nitrogen with the mass ratio of the mixed powder being 10% is added, and the mixture is mixed and refined for 3h to obtain mixed powder with the granularity of 4-5 mu m.
The grinding wheel is characterized in that a base body of the grinding wheel is a combined base body, the base body is composed of a metal structure and a rubber structure, a rubber layer is made of silicon rubber, the thickness of the rubber layer of the base body is 5mm, the width of the rubber layer is 8mm, the outer diameter of the rubber layer is 250mm, and the rubber layer is next to a grinding layer.
The preparation method of the composite bond grinding wheel comprises the following steps:
(1) the diamond grinding material and the SG grinding material pass through a standard sieve with four granularity numbers which are coarser than the diamond grinding material for 3 times, white dextrin water solution with the mass ratio of 5% and the concentration of 50% is added according to the total weight of the diamond grinding material and the SG grinding material, the mixture is placed into a high-frequency vibrating sieve, the mixture is vibrated for 30min for 2000 times/min, and the mixture is taken out for standby;
(2) adding the mixed powder, the polyphenylene sulfide and the zinc oxide whisker into a three-dimensional mixer, rotating at 1200rpm, adding zirconia balls with the mass ratio of 30% (the particle sizes of the zirconia balls are distributed according to the mass ratio of 20% from the particle sizes of 3mm, 5mm, 10mm, 15mm and 20 mm), and vibrating for 3h to obtain a bonding agent;
(3) mixing the materials obtained in the steps (1) and (2), putting the mixture into a planetary mixer for ball mixing for 2 hours, and then sieving the mixture for 3 times by a 200-mesh standard sieve to obtain a grinding wheel molding material;
(4) pouring the uniformly mixed molding materials into a square mold (length, width, height =220mm × 200mm × 60 mm), placing on a vacuum 240 ℃ hot press for prepressing at 50MPa, vacuumizing to-0.06 MPa, and standing for 30 min. Then taking down the grinding wheel from the hot press and transferring the grinding wheel to a microwave sintering furnace (the power is 3 kW), heating the microwave sintering furnace to 350 ℃ according to the heating rate of 15 ℃/min, preserving the heat for 3.5 hours, taking out the grinding wheel, and cooling the grinding wheel to room temperature to obtain a semi-finished grinding wheel;
(5) cutting the semi-finished grinding wheel into arc blocks with the arc degree of 110 degrees and the chord length of 10mm by adopting water cutting, and then obtaining the grinding wheel blocks through a grinding process;
(6) and (3) bonding the grinding wheel block to the rubber matrix by using the organic silicon adhesive, and processing the grinding wheel block into the required precision to obtain the grinding wheel for processing the large-size silicon carbide substrate.
The wheel of example 4 was subjected to a grinding test of a 6 "silicon carbide substrate piece. Specific experimental items: grinding 6 inches of substrate slices on an ACCRETECH thinning machine, wherein the machine tool rotates at 1900rpm, the feeding speed is 0.32 mu m/s, the grinding amount is 210 mu m, the surface of a workpiece has no abnormity such as burn, crack and breakage, the surface TTV value is within 3.0 mu m, and the grinding wheel can continuously work until the grinding wheel is used up, and the process is not finished, which shows that the grinding wheel has good grinding sharpness and can obtain better surface quality.
Example 5
A composite binder grinding wheel for processing a large-size silicon carbide substrate is mainly used for processing large-size silicon carbide substrate materials, and comprises a base body and a grinding layer, wherein the grinding layer comprises the following raw materials in percentage by weight: the grain size is 200/230, the TTI76.5 diamond abrasive 35%, the mixed powder 30%, the polyphenylene sulfide 12%, the zinc oxide whisker 10%, and the SG abrasive 13%.
The mixed powder is obtained by the following processes: by mass percentage, 65% of zinc powder, 19% of copper powder, 2.5% of aluminum powder and 7.5% of iron powder are vibrated for 30min at a speed of 2000 times/min by adopting a high-frequency vibrating screen, then 6% of graphite is added, then the mixture is put into a liquid nitrogen cooling wall breaking machine at a rotating speed of 40000rpm, liquid nitrogen with the mass ratio of the mixed powder being 10% is added, and the mixture is mixed and refined for 6h to obtain the mixed powder with the granularity of 3-4 mu m.
The grinding wheel is characterized in that a base body of the grinding wheel is a combined base body, the base body is composed of a metal structure and a rubber structure, a rubber layer is made of silicon rubber, the thickness of the rubber layer of the base body is 6mm, the width of the rubber layer is 8mm, the outer diameter of the rubber layer is 280mm, and the rubber layer is close to a grinding layer.
The preparation method of the composite bond grinding wheel comprises the following steps:
(1) the diamond grinding material and the SG grinding material pass through a standard sieve with four granularity numbers which are coarser than the diamond grinding material for 3 times, white dextrin water solution with the mass ratio of 5% and the concentration of 50wt% is added according to the total weight of the diamond grinding material and the SG grinding material, the mixture is placed into a high-frequency vibrating sieve, the mixture is vibrated for 30min for 2000 times/min, and the mixture is taken out for standby;
(2) adding the mixed powder, the polyphenylene sulfide and the zinc oxide whisker into a three-dimensional mixer, rotating at 1200rpm, adding zirconia balls with the mass ratio of 30% (the particle sizes of the zirconia balls are distributed according to the mass ratio of 20% from the particle sizes of 3mm, 5mm, 10mm, 15mm and 20 mm), and vibrating for 3h to obtain a bonding agent;
(3) mixing the materials obtained in the steps (1) and (2), putting the mixture into a planetary mixer for ball mixing for 2 hours, and then sieving the mixture for 3 times by a 200-mesh standard sieve to obtain a grinding wheel molding material;
(4) pouring the uniformly mixed molding materials into a square mold (length, width, height =220mm × 200mm × 60 mm), placing the square mold on a 260 ℃ hot press with vacuum for prepressing, wherein the prepressing pressure is 50MPa, placing the square mold for 30min after vacuumizing to-0.06 MPa, then taking the square mold from the hot press and transferring the square mold to a microwave sintering furnace (the power is 3 kW), heating the square mold to 450 ℃ according to the heating rate of 18 ℃/min for microwave sintering, preserving the heat for 6h, taking out the square mold, and cooling to room temperature to obtain a semi-finished grinding wheel;
(5) cutting the semi-finished grinding wheel into arc blocks with the arc degree of 110 degrees and the chord length of 10mm by adopting water cutting, and then obtaining the grinding wheel blocks through a grinding process;
(6) and (3) bonding the grinding wheel block to the rubber matrix by using the organic silicon adhesive, and processing the grinding wheel block into the required precision to obtain the grinding wheel for processing the large-size silicon carbide substrate.
The wheel of example 5 was subjected to a grinding test of a 6 "silicon carbide substrate piece. Specific experimental items: grinding 6 inches of substrate slices on an ACCRETECH thinning machine, wherein the rotating speed of the machine tool is 2000rpm, the feeding speed is 0.35 mu m/s, the grinding amount is 185 mu m, the surface of a workpiece has no abnormity such as burn, crack and breakage, the surface TTV value is within 2.8 mu m, and the grinding wheel can continuously work until the grinding wheel is used up, and the process is not finished, which shows that the grinding wheel has good grinding sharpness and can obtain better surface quality.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (8)
1. The composite bond grinding wheel for processing the large-size silicon carbide substrate is composed of a base body and a grinding layer, and is characterized in that the grinding layer is composed of the following raw materials in percentage by weight: 25-45% of diamond abrasive, 25-40% of mixed powder, 8-20% of polyphenylene sulfide, 10-18% of zinc oxide whisker and 8-22% of SG abrasive, wherein the mixed powder consists of zinc powder, copper powder, iron powder, aluminum powder and graphite, the granularity of the mixed powder is 3-6 mu m, and the mixed powder comprises the following raw materials in percentage by mass: 60-70% of zinc powder, 15-20% of copper powder, 0.5-3% of aluminum powder, 6-13% of graphite and the balance of iron powder.
2. The composite bond grinding wheel for processing the large-size silicon carbide substrate according to claim 1, wherein the total content of iron and aluminum in the mixed powder is within 10%, and the mass ratio of iron to aluminum is 3: 1.
3. The grinding wheel with composite bonding agent for processing the large-size silicon carbide substrate as claimed in claim 1, wherein the polyphenylene sulfide has a particle size of 30-80 μ M, the diamond abrasive is titanium-plated diamond with an abrasive particle size of 200/230-M24/32 and TTI >75, the plating thickness is 300-500nm, and the SG abrasive is four-size-number finer than the diamond abrasive.
4. The composite bond grinding wheel for processing a large-size silicon carbide substrate according to claim 1 or 2, wherein the preparation process of the mixed powder comprises the following steps: and (2) vibrating the zinc powder, the copper powder, the aluminum powder and the iron powder for 10-30min by adopting a high-frequency vibrating screen, then adding graphite, then placing the mixture into a wall breaking machine, adding liquid nitrogen with the mixed powder mass ratio of 10%, mixing at the rotation speed of 20000-40000rpm, and carrying out refining treatment for 2-6h to obtain the mixed powder with the granularity of 3-6 mu m.
5. The composite bonding agent grinding wheel for processing the large-size silicon carbide substrate as claimed in claim 1, wherein the base body of the grinding wheel is a combined base body, the base body is composed of a metal structure and a rubber structure, the rubber layer is made of silicon rubber, the thickness of the rubber layer of the base body is 3-6mm, the width of the rubber layer is 8mm, the outer diameter of the rubber layer is 150-300mm, and the rubber layer is next to the grinding layer.
6. The composite bond grinding wheel for processing the large-size silicon carbide substrate according to claim 1, wherein the zinc oxide whiskers in the bond are tetrapod-like zinc oxide whiskers, the tetrapod-like zinc oxide whiskers have a three-dimensional tetrapod-like three-dimensional structure, and the length of a needle body of each whisker is 20-45 μm.
7. The method for preparing the composite bond grinding wheel for processing the large-size silicon carbide substrate according to any one of claims 1 to 6, which comprises the following steps:
(1) the method comprises the following steps of (1) passing diamond grinding materials and SG grinding materials through a standard sieve with four particle sizes coarser than the diamond grinding materials for 2-4 times, adding a white dextrin water solution with the mass ratio of 4-6% and the concentration of 45-55 wt% according to the total weight of the diamond grinding materials and the SG grinding materials, placing the mixture into a high-frequency vibrating sieve for vibrating for 20-40 min, and taking out for later use;
(2) adding mixed powder, polyphenylene sulfide and zinc oxide whiskers into a three-dimensional mixer at the rotating speed of 1000-1500 rpm, adding zirconia balls accounting for 30% of the total mass of the mixed powder, the polyphenylene sulfide and the zinc oxide, and vibrating for 2-4 hours to obtain a bonding agent;
(3) mixing the materials obtained in the steps (1) and (2), putting the materials into a planetary mixer, ball-mixing for 1.5-2.5 h, and then sieving for 3 times by a 200-mesh standard sieve to obtain a grinding wheel molding material;
(4) pouring the uniformly mixed molding materials into a square mold, placing the square mold on a hot press with a vacuum device and a temperature of 220 plus one year and a temperature of 260 ℃, prepressing at 40-60 MPa, vacuumizing to below-0.06 MPa, placing for a certain time, taking down the hot press, transferring the hot press to a microwave sintering furnace, heating the microwave sintering to 450 ℃ at a heating rate of 12-18 ℃/min, preserving the heat for 2-6h, taking out, and cooling to room temperature to obtain a semi-finished grinding wheel;
(5) cutting the semi-finished grinding wheel into arc blocks with the arc degree of 110 degrees and the chord length of 10mm by water cutting, then obtaining the grinding wheel blocks through a grinding procedure,
(6) and (3) bonding the grinding wheel block to the rubber matrix by using the organic silicon adhesive, and processing the grinding wheel block into the required precision to obtain the grinding wheel for processing the large-size silicon carbide substrate.
8. The method for preparing the composite bond grinding wheel for processing the large-size silicon carbide substrate according to claim 7, wherein the power used by the microwave sintering furnace in the step (4) is 3 kW.
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