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CN113474433A - Film-like adhesive, adhesive sheet and semiconductor device - Google Patents

Film-like adhesive, adhesive sheet and semiconductor device Download PDF

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Publication number
CN113474433A
CN113474433A CN202080012681.7A CN202080012681A CN113474433A CN 113474433 A CN113474433 A CN 113474433A CN 202080012681 A CN202080012681 A CN 202080012681A CN 113474433 A CN113474433 A CN 113474433A
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China
Prior art keywords
adhesive
film
semiconductor element
semiconductor
bonding
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Application number
CN202080012681.7A
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Chinese (zh)
Inventor
孙晓寅
伏木贵法
中山纪行
国土由衣
中村奏美
桥本慎太郎
谷口纮平
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Resonac Holdings Corp
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Showa Denko KK
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Publication of CN113474433A publication Critical patent/CN113474433A/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J119/00—Adhesives based on rubbers, not provided for in groups C09J107/00 - C09J117/00
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/18—Homopolymers or copolymers of nitriles
    • C09J133/20—Homopolymers or copolymers of acrylonitrile
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)

Abstract

本发明公开一种用于黏合半导体元件与搭载半导体元件的支承部件的膜状黏合剂。该膜状黏合剂含有丙烯酸橡胶。丙烯酸橡胶满足下述条件(i)或条件(ii)中的任一个，条件(i)：具有源自丙烯腈的构成单元且具有超过12℃的玻璃化转变温度(Tg)，条件(ii)：不具有源自丙烯腈的构成单元且具有0℃以上的玻璃化转变温度(Tg)。

Figure 202080012681

The present invention discloses a film adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted. The film adhesive contains acrylic rubber. The acrylic rubber satisfies either of the following conditions (i) or conditions (ii), condition (i): having a structural unit derived from acrylonitrile and having a glass transition temperature (Tg) exceeding 12°C, condition (ii) : It does not have a structural unit derived from acrylonitrile and has a glass transition temperature (Tg) of 0°C or higher.

Figure 202080012681

Description

Film-like adhesive, adhesive sheet and semiconductor device
Technical Field
The invention relates to a film-like adhesive, an adhesive sheet and a semiconductor device.
Background
In recent years, a stacked MCP (Multi Chip Package) in which semiconductor elements (semiconductor chips) are stacked in a plurality of layers has become widespread, and is mounted as a memory semiconductor Package for a mobile phone, a portable audio device, or the like. With the increase in the number of functions of mobile phones and the like, semiconductor packages are also being increased in speed, density, integration, and the like. In addition, the use of copper as a wiring material for a circuit of a semiconductor chip enables high-speed operation. In addition, from the viewpoint of improving the reliability of connection with a complicated mounting substrate and promoting heat dissipation from a semiconductor package, lead frames made of copper have been used.
However, since a coating material for securing insulation of a circuit surface also tends to be simplified from the viewpoint of copper having characteristics of being easily corroded and cost reduction, it tends to be difficult to secure electrical characteristics of a semiconductor package. In particular, in a semiconductor package in which a plurality of semiconductor chips are stacked, copper ions generated by corrosion tend to migrate inside the adhesive, and thus electrical signals tend to be easily lost in the semiconductor chips or between the semiconductor chips and the semiconductor chips.
In addition, from the viewpoint of high functionality, semiconductor elements are often connected to a complicated mounting board, and a lead frame made of copper tends to be preferred in order to improve connection reliability. Even in this case, there is a case where loss of an electric signal due to copper ions generated from the lead frame becomes a problem.
In addition, in a semiconductor package using a member made of copper, there is a high possibility that copper ions are generated from the member to cause an electrical failure, and sufficient HAST resistance may not be obtained.
In view of preventing the loss of electrical signals, etc., studies have been made on binders that trap copper ions generated in semiconductor packages. For example, patent document 1 discloses an adhesive sheet for manufacturing a semiconductor device, which comprises a thermoplastic resin having an epoxy group and no carboxyl group, and an organic complex-forming compound having a heterocyclic compound containing a tertiary nitrogen atom in a ring atom and forming a complex with a cation.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2013-026566
Disclosure of Invention
Technical problem to be solved by the invention
However, the conventional binders are not sufficient in suppressing the defects associated with the movement of copper ions in the binders, and there is still room for improvement.
Accordingly, a main object of the present invention is to provide a film-like adhesive that can sufficiently suppress a failure accompanying migration of copper ions in the adhesive.
Means for solving the technical problem
The present inventors have conducted intensive studies and, as a result, have found that the copper ion penetration in an adhesive can be sufficiently suppressed by using an acrylic rubber having a glass transition temperature (Tg) in a specific range, thereby completing the present invention.
One aspect of the present invention provides a film-like adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted, wherein the film-like adhesive contains an acrylic rubber, and the acrylic rubber satisfies either of the following conditions (i) or (ii).
Condition (i): has a constituent unit derived from acrylonitrile and has a glass transition temperature (Tg) exceeding 12 ℃.
Condition (ii): has no acrylonitrile-derived constituent unit and has a glass transition temperature (Tg) of 0 ℃ or higher.
The reason why the movement of copper ions in the binder can be sufficiently suppressed by using such acrylic rubber is not necessarily clear, but the inventors of the present invention believe that this is because the molecular mobility tends to be low as the glass transition temperature (Tg) of the acrylic rubber becomes high, and the probability of copper ions passing through the gaps between the molecules becomes low.
Another aspect of the present invention provides an adhesive sheet including: a substrate; and the film-like adhesive provided on one surface of the substrate. The substrate may be a dicing tape.
Another aspect of the present invention provides a semiconductor device including: a semiconductor element; a support member on which a semiconductor element is mounted; and an adhesive member provided between the semiconductor element and the supporting member and bonding the semiconductor element and the supporting member, wherein the adhesive member is the above film-like adhesive or a cured product thereof.
Effects of the invention
According to the present invention, a film-like adhesive that can sufficiently suppress a failure accompanying the movement of copper ions in the adhesive can be provided. Further, according to the present invention, an adhesive sheet and a semiconductor device using such a film-like adhesive can be provided.
Drawings
Fig. 1 is a schematic cross-sectional view showing one embodiment of a film-like adhesive.
Fig. 2 is a schematic cross-sectional view showing one embodiment of the adhesive sheet.
Fig. 3 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
Fig. 4 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
Fig. 5 is a schematic cross-sectional view showing another embodiment of the adhesive sheet.
Fig. 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device.
Fig. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the present invention is not limited to the following embodiments. In the following embodiments, unless otherwise explicitly stated, constituent elements (including steps and the like) thereof are not essential. The sizes of the components in the drawings are conceptual sizes, and the relative relationship between the sizes of the components is not limited to the relationship shown in the drawings.
The same applies to numerical values and ranges thereof in the present specification, and the present invention is not limited thereto. In the present specification, a numerical range represented by "to" means a range in which numerical values before and after "to" are included as a minimum value and a maximum value, respectively. In the numerical ranges recited in the present specification, an upper limit or a lower limit recited in one numerical range may be replaced with an upper limit or a lower limit recited in another numerical range recited in a stepwise manner. In the numerical ranges described in the present specification, the upper limit or the lower limit of the numerical range may be replaced with the values shown in the examples.
In the present specification, (meth) acrylate means acrylate or methacrylate corresponding thereto.
The film-like adhesive according to one embodiment is a film-like adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted, and the film-like adhesive contains an acrylic rubber (hereinafter, sometimes referred to as a "component (a)").
The film-shaped adhesive can be obtained by molding an adhesive composition containing the component (a) into a film shape. The film-like adhesive and the adhesive composition may be in a semi-cured (B-stage) state.
(A) The component (A) is a rubber having a constituent unit derived from a (meth) acrylate as a main component. The content of the constituent unit derived from the (meth) acrylate in the component (a) may be, for example, 70 mass% or more, 80 mass% or more, or 90 mass% or more based on the total amount of the constituent units. (A) The component (b) may contain a constituent unit derived from a (meth) acrylate having a crosslinkable functional group such as an epoxy group, an alcoholic or phenolic hydroxyl group, or a carboxyl group.
(A) The component (b) satisfies either of the following conditions (i) or (ii).
Condition (i): has a constituent unit derived from acrylonitrile and has a glass transition temperature (Tg) exceeding 12 ℃.
Condition (ii): has no acrylonitrile-derived constituent unit and has a glass transition temperature (Tg) of 0 ℃ or higher.
In the condition (i), when the component (a) has a constituent unit derived from acrylonitrile, the glass transition temperature (Tg) of the component (a) may be more than 12 ℃ and 55 ℃ or less, 15 ℃ or more and 30 ℃ or less, or 19 ℃ or more and 25 ℃ or less. In the condition (ii), when the component (a) does not have a constituent unit derived from acrylonitrile, the glass transition temperature (Tg) of the component (a) may be 0 ℃ or more and 50 ℃ or less, 10 ℃ or more and 30 ℃ or less, or 15 ℃ or more and 25 ℃ or less. When the Tg of the component (a) is not less than the lower limit of each condition, the adhesive composition tends to be prevented from excessively increasing in flexibility. This makes it easy to cut the film-like adhesive when dicing the wafer, and prevents the occurrence of burrs (burr). When the Tg of the component (a) is not more than the upper limit of each condition, the adhesive composition tends to be inhibited from decreasing in flexibility. Therefore, when the film-like adhesive is attached to a wafer, the voids tend to be easily and sufficiently filled. Further, chipping (chipping) during dicing due to a decrease in the adhesion of the wafer can be prevented. Here, the glass transition temperature (Tg) refers to a value measured using a DSC (differential thermal scanning calorimeter) (for example, manufactured by Rigaku Corporation, Thermo Plus 2).
(A) The glass transition temperature (Tg) of the component (a) can be adjusted to a predetermined range by adjusting the ratio of a (meth) acrylate having a high Tg to a (meth) acrylate having a low Tg, for example.
As commercially available products of the component (A) having a constituent unit derived from acrylonitrile, there can be mentioned, for example, SG-P3, SG-80H, HTR-860P-3CSP (all manufactured by Nagase Chemtex Corporation) and the like. Examples of commercially available products of component (a) that do not have acrylonitrile-derived constituent units include KH-CT-865 (manufactured by Hitachi Chemical co., ltd.).
The film-like adhesive (adhesive composition) may contain the component (a), but may contain other components. Examples of the other components include pigments, ion collectors, and antioxidants.
The content of the other component may be 0 to 30 parts by mass with respect to 100 parts by mass of the total mass of the component (a).
Fig. 1 is a schematic cross-sectional view showing one embodiment of a film-like adhesive. The film-shaped adhesive 1 (adhesive film) shown in fig. 1 is formed by molding an adhesive composition into a film shape. The film-like adhesive 1 may be in a semi-cured (B-stage) state. Such a film-like adhesive 1 can be formed by applying an adhesive composition to a support film. When a varnish of the adhesive composition (adhesive varnish) is used, the film-shaped adhesive 1 can be formed by mixing the component (a) and other components added as needed in a solvent, mixing or kneading the mixture to prepare an adhesive varnish, applying the adhesive varnish to a support film, and removing the solvent by heating and drying.
The support film is not particularly limited as long as it can withstand the above-mentioned heat drying, and examples thereof include a polyester film, a polypropylene film, a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyether naphthalate film, and a polymethylpentene film. The support film may be a multilayer film in which two or more kinds of films are combined, or may be a film whose surface is treated with a release agent such as a silicone-based or silica-based release agent. The thickness of the support film may be, for example, 1 to 200 μm or 5 to 170 μm.
The mixing or kneading can be carried out by appropriately combining them using a dispersing machine such as a general mixer, a mill (raikai mixer), a three-roll mill, or a ball mill.
The solvent used for the preparation of the binder varnish is not limited as long as it can uniformly dissolve, knead or disperse the respective components, and conventionally known solvents can be used. Examples of such solvents include ketone solvents such as acetone, methyl ethyl ketone, and cyclohexanone, dimethylformamide, dimethylacetamide, N-methyl-2-pyrrolidone, toluene, and xylene. The solvent may be methyl ethyl ketone, cyclohexanone or the like from the viewpoint of high drying rate and low cost.
As a method for applying the adhesive varnish to the support film, a known method can be used, and examples thereof include a blade coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, a curtain coating method, and the like. The conditions for the heat drying are not particularly limited as long as the solvent used can be sufficiently volatilized, and the heat drying can be performed by heating at 50 to 150 ℃ for 1 to 30 minutes.
The thickness of the film-like adhesive may be 50 μm or less. When the thickness of the film-like adhesive is 50 μm or less, the distance between the semiconductor element and the support member on which the semiconductor element is mounted is close, and thus defects due to copper ions tend to easily occur. The film-shaped binder according to the present embodiment can sufficiently suppress migration (penetration) of copper ions in the binder, and therefore the thickness thereof can be set to 50 μm or less. The thickness of the film-like adhesive 1 may be 40 μm or less, 30 μm or less, 20 μm or less, or 10 μm or less. The lower limit of the thickness of the film-like adhesive 1 is not particularly limited, and may be, for example, 1 μm or more.
The copper ion penetration time of the film-like adhesive in the semi-cured (B-stage) state may exceed 250 minutes, and may be 300 minutes or more, 350 minutes or more, or 400 minutes or more. When the copper ion penetration time exceeds 250 minutes, it is predicted that even if a defect such as insufficient curing occurs in the production of a semiconductor device, the defect due to copper ions is less likely to occur.
Fig. 2 is a schematic cross-sectional view showing one embodiment of the adhesive sheet. The adhesive sheet 100 shown in fig. 2 includes a substrate 2 and a film-like adhesive 1 provided on the substrate 2. Fig. 3 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. The adhesive sheet 110 shown in fig. 3 includes a substrate 2, a film-like adhesive 1 provided on the substrate 2, and a cover film 3 provided on the surface of the film-like adhesive 1 opposite to the substrate 2.
The substrate 2 is not particularly limited and may be a substrate film. The substrate film may be the same as the support film described above.
The cover film 3 is used to prevent damage or contamination of the film-shaped adhesive, and may be, for example, a polyethylene film, a polypropylene film, a film whose surface is treated with a release agent, or the like. The thickness of the cover film 3 may be, for example, 15 to 200 μm or 70 to 170 μm.
The adhesive sheets 100 and 110 can be formed by applying an adhesive composition to a substrate film in the same manner as the method of forming the film-shaped adhesive. The method of applying the adhesive composition to the substrate 2 may be the same as the method of applying the adhesive composition to the support film described above.
The adhesive sheet 110 can be obtained by further laminating a cover film 3 on the film-like adhesive 1.
The adhesive sheets 100 and 110 may be formed using a film-like adhesive prepared in advance. In this case, the adhesive sheet 100 can be formed by laminating under predetermined conditions (for example, room temperature (20 ℃) or a heated state) using a roll laminator (roll laminator), a vacuum laminator, or the like. The adhesive sheet 100 can be continuously manufactured, and can be formed by using a roll laminator in a heated state from the viewpoint of excellent efficiency.
Another embodiment of the adhesive sheet is a dicing/die-bonding (dicing/die-bonding) integrated adhesive sheet in which the base material 2 is a dicing tape. When the dicing die-bonding integrated adhesive sheet is used, the semiconductor wafer can be laminated at one time, and thus the work efficiency can be improved.
Examples of the dicing tape include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. The dicing tape may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment as needed. The dicing tape may have an adhesive property (adhesiveness). The dicing tape may be a tape obtained by imparting tackiness to the plastic film, or a tape obtained by providing a pressure-sensitive adhesive layer on one surface of the plastic film. The pressure-sensitive adhesive layer may be of any of a pressure-sensitive type and a radiation-curable type, and any conventionally known pressure-sensitive adhesive layer can be used without particular limitation as long as it has a sufficient adhesive force (adhesive force) that does not scatter the semiconductor element at the time of dicing and has a low adhesive force to such an extent that the semiconductor element is not damaged in the subsequent semiconductor element pickup step.
The thickness of the dicing tape may be 60 to 150 μm or 70 to 130 μm from the viewpoint of economy and handling of the film.
Examples of such a dicing die-bonding integrated adhesive sheet include a dicing die-bonding integrated adhesive sheet having a structure shown in fig. 4, and a dicing die-bonding integrated adhesive sheet having a structure shown in fig. 5. Fig. 4 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. Fig. 5 is a schematic cross-sectional view showing another embodiment of the adhesive sheet. The adhesive sheet 120 shown in fig. 4 includes a dicing tape 7, a pressure-sensitive adhesive layer 6, and a film-like adhesive 1 in this order. The adhesive sheet 130 shown in fig. 5 may include a dicing tape 7 and a film-like adhesive 1 provided on the dicing tape 7.
The adhesive sheet 120 can be obtained by, for example, providing a pressure-sensitive adhesive layer 6 on a dicing tape 7, and further laminating a film-like adhesive 1 on the pressure-sensitive adhesive layer 6. The adhesive sheet 130 can be obtained by bonding the dicing tape 7 and the film-like adhesive 1, for example.
The film-like adhesive and the adhesive sheet can be used for manufacturing a semiconductor device, and can be used for manufacturing a semiconductor device including the steps of: after a film-like adhesive and a dicing tape are bonded to a semiconductor wafer or a semiconductor element (semiconductor chip) which has been already singulated, at 0 to 90 ℃, a semiconductor element with a film-like adhesive is obtained by dicing using a rotary blade, a laser, or stretching, and then the semiconductor element with a film-like adhesive is bonded to an organic substrate, a lead frame, or another semiconductor element.
Examples of the semiconductor wafer include compound semiconductors such as single crystal silicon, polycrystalline silicon, various ceramics, and gallium arsenide.
The film-like adhesive and the adhesive sheet can be used for bonding semiconductor elements such as IC and LSI and lead frames such as 42 alloy lead frames and copper lead frames; plastic films such as polyimide resin and epoxy resin; a material obtained by impregnating a base material such as glass nonwoven fabric with a plastic such as polyimide resin or epoxy resin and curing the plastic; a crystal grain bonding adhesive for a semiconductor mounting support member such as alumina or the like.
The film-like adhesive and the adhesive sheet are also suitable as an adhesive for bonding a semiconductor element and a semiconductor element in a Stacked-PKG (Stacked-PKG) structure in which a plurality of semiconductor elements are Stacked. In this case, one of the semiconductor elements serves as a support member for mounting the semiconductor element.
The film-like adhesive and the adhesive sheet can be used as a protective sheet for protecting the back surface of a semiconductor element of a flip-chip semiconductor device, a sealing sheet for sealing between the front surface of a semiconductor element of a flip-chip semiconductor device and an adherend, and the like.
A semiconductor device manufactured using a film-like adhesive will be specifically described with reference to the drawings. In addition, in recent years, semiconductor devices having various structures have been proposed, and the use of the film-like adhesive according to the present embodiment is not limited to the semiconductor devices having the structures described below.
Fig. 6 is a schematic cross-sectional view showing one embodiment of a semiconductor device. The semiconductor device 200 shown in fig. 6 includes: a semiconductor element 9; a support member 10 on which the semiconductor element 9 is mounted; and an adhesive member 1c (film-like adhesive or cured product thereof) provided between the semiconductor element 9 and the supporting member 10 and bonding the semiconductor element 9 and the supporting member 10. The adhesive member 1c is a film-like adhesive or a cured product thereof. Connection terminals (not shown) of the semiconductor element 9 are electrically connected to external connection terminals (not shown) via wires 11, and are sealed with a sealing material 12.
Fig. 7 is a schematic cross-sectional view showing another embodiment of the semiconductor device. In the semiconductor device 210 shown in fig. 7, the first-stage semiconductor element 9a is bonded to the supporting member 10 on which the terminal 13 is formed by the bonding member 1c, and the second-stage semiconductor element 9b is further bonded to the first-stage semiconductor element 9a by the bonding member 1 c. Connection terminals (not shown) of the first-stage semiconductor element 9a and the second-stage semiconductor element 9b are electrically connected to external connection terminals via lead wires 11, and are sealed with a sealing material 12. The adhesive member 1c is a film-like adhesive or a cured product thereof. As described above, the film-like adhesive according to the present embodiment can be suitably used for a semiconductor device having a structure in which a plurality of semiconductor elements are stacked.
The semiconductor device (semiconductor package) shown in fig. 6 and 7 is obtained, for example, by performing the following steps: a film-like adhesive is provided between the semiconductor element and the supporting member or between the semiconductor element and the semiconductor element, and these are bonded by heat-pressure bonding, and then, if necessary, a wire bonding step, a sealing step using a sealing material, a heat-melting step including reflow using solder, and the like are performed. The heating temperature in the heating and crimping step is usually 20 to 250 ℃, the load is usually 0.1 to 200N, and the heating time is usually 0.1 to 300 seconds.
As a method of providing the film-like adhesive between the semiconductor element and the supporting member or between the semiconductor element and the semiconductor element, as described above, a method of manufacturing a semiconductor element with the film-like adhesive in advance and then attaching the semiconductor element to the supporting member or the semiconductor element may be used.
The support member may include a member having copper as a material. In the semiconductor device according to the present embodiment, since the semiconductor element and the supporting member are bonded to each other with the film-like adhesive or the cured product thereof, even when a member made of copper is used as a constituent member of the semiconductor device, the influence of copper ions generated from the member can be reduced, and occurrence of electrical failure due to the copper ions can be sufficiently suppressed.
Here, as the member made of copper, for example, a lead frame, a wiring, a lead wire, a heat dissipating material, and the like can be given, and in any case where copper is used, the influence of copper ions can be reduced.
Next, an embodiment of a method for manufacturing a semiconductor device when the die-bonding integrated adhesive sheet shown in fig. 4 is used will be described. The method for manufacturing a semiconductor device using the dicing die-bonding integrated adhesive sheet is not limited to the method for manufacturing a semiconductor device described below.
First, the semiconductor wafer is pressure bonded to the film-like adhesive 1 in the adhesive sheet 120 (dicing die-bonding integrated adhesive sheet), and is bonded and held to be fixed (mounting step). This step can be performed while pressing with a pressing mechanism such as a pressure roller.
Then, the semiconductor wafer is diced. In this way, the semiconductor wafer is cut into a predetermined size, and a plurality of singulated semiconductor elements (semiconductor chips) with the film-like adhesive are manufactured. Dicing can be performed, for example, by a conventional method from the circuit surface side of the semiconductor wafer. In this step, for example, a cutting method called full cut (full cut) in which cutting is performed up to a dicing tape, a cutting method in which a semiconductor wafer is cut into a half cut and then stretched under cooling to be divided, a cutting method using a laser, or the like can be employed. The cutting device used in this step is not particularly limited, and a conventionally known cutting device can be used.
In order to peel off the semiconductor element adhesively fixed on the dicing die-bond integrated adhesive sheet, pickup of the semiconductor element is performed. The pickup method is not particularly limited, and various conventionally known methods can be used. For example, there is a method in which each semiconductor element is pushed from the dicing die-bonding integrated adhesive sheet side by a pin, and the pushed semiconductor element is picked up by a pickup device.
Here, when the pressure-sensitive adhesive layer is of a radiation (e.g., ultraviolet) curing type, the pressure-sensitive adhesive layer is irradiated with radiation and then picked up. Thus, the adhesive strength of the pressure-sensitive adhesive layer to the film-like adhesive is reduced, and the semiconductor element is easily peeled. As a result, the semiconductor element can be picked up without being damaged.
Then, the semiconductor element with the film-like adhesive formed by dicing is bonded to a support member for mounting the semiconductor element through the film-like adhesive. The bonding may be performed by crimping. The conditions for the die bonding are not particularly limited, and can be set as appropriate as needed. Specifically, the bonding can be performed at a die bonding temperature of 80 to 160 ℃, a bonding load of 5 to 15N, and a bonding time of 1 to 10 seconds.
If necessary, a step of thermally curing the film-like adhesive may be provided. By thermally curing the film-like adhesive that bonds the support member and the semiconductor element through the bonding step, the bonding and fixing can be performed more firmly. When the heat curing is performed, the curing may be performed while applying pressure. The heating temperature in this step can be appropriately changed depending on the constituent components of the film-like adhesive. The heating temperature may be, for example, 60 to 200 ℃. Further, the present step may be performed while changing the temperature or pressure in stages.
Next, a wire bonding step of electrically connecting the tip of the terminal portion (inner lead) of the supporting member and the electrode pad on the semiconductor element with a bonding wire is performed. As the bonding wire, for example, a gold wire, an aluminum wire, a copper wire, or the like is used. The temperature for wire bonding may be in the range of 80 to 250 ℃ or 80 to 220 ℃. The heating time may be several seconds to several minutes. The connection may be performed by using both vibration energy generated by ultrasonic waves and pressure bonding energy generated by applying pressure in a state where the heating is performed in the temperature range.
Next, a sealing step of sealing the semiconductor element with a sealing resin is performed. This step is performed to protect the semiconductor element or the bonding wire mounted on the support member. This step is performed by molding the sealing resin with a mold. The sealing resin may be, for example, an epoxy resin. The substrate and the residue are buried by heat and pressure at the time of sealing, and peeling caused by bubbles at the bonding interface can be prevented.
Next, in the post-curing step, the sealing resin that was not cured sufficiently in the sealing step is completely cured. Even when the film-shaped adhesive is not thermally cured in the sealing step, the film-shaped adhesive can be thermally cured to be bonded and fixed while the sealing resin is cured in this step. The heating temperature in this step can be appropriately set according to the type of the sealing resin, and for example, the heating temperature can be in the range of 165 to 185 ℃, and the heating time can be about 0.5 to 8 hours.
Next, the semiconductor element with the film-like adhesive bonded to the support member is heated using a reflow furnace. In this step, the semiconductor device sealed with the resin may be surface-mounted on the support member. As a method of surface mounting, for example, reflow soldering in which solder is supplied to a printed wiring board in advance and then heated and melted by warm air or the like to perform soldering is given. Examples of the heating method include hot air reflux and infrared reflux. The heating method may be a method of heating the entire structure or a method of heating a part of the structure. The heating temperature may be, for example, 240 to 280 ℃.
When semiconductor elements are stacked in multiple layers, the thermal history of the wire bonding process or the like increases, and there is a possibility that the peeling effect due to air bubbles existing at the interface between the film-like adhesive and the semiconductor elements is increased. However, the film-like adhesive according to the present embodiment tends to have a reduced cohesive force and an improved embeddability by using a specific acrylic rubber. Therefore, bubbles are less likely to be taken into the semiconductor device, and bubbles can be easily diffused in the sealing step, thereby preventing peeling caused by bubbles at the bonding interface.
Examples
The present invention will be specifically described below with reference to examples and comparative examples, but the present invention is not limited to these examples.
(examples 1 and 2 and comparative example 1)
[ production of film-like adhesive ]
< preparation of adhesive varnish >
The acrylic rubber solutions shown in table 1 were used as binder varnishes. The numerical values shown in table 1 indicate the mass parts of the solid content of the acrylic rubber solution.
(A) The components: acrylic rubber
(A1) Acrylic rubber A: SG-P3 solvent modified product (obtained by modifying the solvent of SG-P3 (trade name, methyl ethyl ketone solution of acrylic rubber, manufactured by Nagase Chemtex Corporation)), and a constituent unit derived from acrylonitrile: the weight average molecular weight is: 70 ten thousand, measured Tg: 12 ℃, solvent: cyclohexanone
(A2) Acrylic rubber B: constituent unit derived from acrylonitrile: the weight average molecular weight is: 70 ten thousand, measured Tg: 22 ℃, solvent: cyclohexanone
(A3) Acrylic rubber C: constituent unit derived from acrylonitrile: none, weight average molecular weight: 50 ten thousand, measured Tg: 20 ℃, solvent: cyclohexanone
< preparation of film-like adhesive >
The prepared binder varnish was filtered with a 100-mesh filter and subjected to vacuum defoaming. As a base film, a release-treated polyethylene terephthalate (PET) film having a thickness of 38 μm was prepared, and the binder varnish after vacuum defoaming was applied to the PET film. The applied adhesive varnish was dried by heating at 2 stages of 5 minutes at 90 ℃ and then 5 minutes at 130 ℃ to obtain film-like adhesives of examples 1 and 2 and comparative example 1 in a B-stage state. In the film-like adhesive, the thickness was adjusted to 20 μm depending on the amount of the adhesive varnish applied.
[ measurement of copper ion permeation time ]
< preparation of solution A >
2.0g of anhydrous copper sulfate (II) was dissolved in 1020g of distilled water, and stirred until the copper sulfate was completely dissolved, thereby preparing an aqueous copper sulfate solution having a copper ion concentration of 500mg/kg in terms of Cu element. The resulting copper sulfate aqueous solution was used as solution A.
< preparation of solution B >
1.0g of anhydrous sodium sulfate was dissolved in 1000g of distilled water, and stirred until the sodium sulfate was completely dissolved. 1000g of N-methyl-2-pyrrolidone (NMP) was further added thereto, and stirring was performed. Then, air cooling was performed until the temperature became room temperature, thereby obtaining an aqueous sodium sulfate solution. The resulting solution was defined as solution B.
< determination of copper ion permeation time >
The film-like adhesives (thickness: 20 μm) of examples 1 and 2 and comparative example 1 prepared as described above were each cut into a circular shape having a diameter of about 3 cm. Next, two silicon packing sheets (silicon packing sheets) having a thickness of 1.5mm, an outer diameter of about 3cm and an inner diameter of 1.8cm were prepared. The adhesive film cut into a circular shape was sandwiched between two silicon liner sheets, and the adhesive film was sandwiched between flange portions of two glass grooves (cells) having a volume of 50mL, and fixed by rubber bands.
Then, 50g of the A liquid was poured into one of the glass tanks, and 50g of the B liquid was poured into the other glass tank. Mixing Mars Carbon (STAEDTLER Mars GmbH)&The preparation of Co, the preparation of KG,
Figure BDA0003197175500000121
) As carbon electrodes, were inserted into the respective tanks. The liquid A side was set as an anode, the liquid B side was set as a cathode, and the anode and a DC power supply were connected (A)&D Company, manufactured by Limited, DC Power supply AD-9723D). The cathode and the dc power supply were connected in series via an ammeter (manufactured by Sanwa electric instrument co., ltd., digital multimeter (digital multimeter) PC-720M). At room temperature, a voltage was applied at an applied voltage of 24.0V, and after the application, the current value measurement was started. The measurement time was 500 minutes, and the rise time of the current value was the copper ion penetration time. In this evaluation, it can be said that the slower the rise time of the current value, the more the copper ion penetration is suppressed. The results are shown in table 1.
[ Table 1]
Figure BDA0003197175500000131
As described above, it was confirmed that the film-shaped binder of the present invention can sufficiently suppress copper ion penetration in the binder.
Description of the symbols
1-film-like adhesive, 1 c-adhesive member, 2-substrate, 3-cover film, 6-pressure-sensitive adhesive layer, 7-dicing tape, 9a, 9 b-semiconductor element, 10-support member, 11-wire, 12-sealing material, 13-terminal, 100, 110, 120, 130-adhesive sheet, 200, 210-semiconductor device.

Claims (4)

1.一种膜状黏合剂，其用于黏合半导体元件和搭载所述半导体元件的支承部件，其中，1. A film-like adhesive for bonding a semiconductor element and a support member on which the semiconductor element is mounted, wherein: 所述膜状黏合剂含有丙烯酸橡胶，The film adhesive contains acrylic rubber, 所述丙烯酸橡胶满足下述条件(i)或条件(ii)中的任一个，The acrylic rubber satisfies any one of the following condition (i) or condition (ii), 条件(i)：具有源自丙烯腈的构成单元且具有超过12℃的玻璃化转变温度Tg，Condition (i): having a structural unit derived from acrylonitrile and having a glass transition temperature Tg exceeding 12°C, 条件(ii)：不具有源自丙烯腈的构成单元且具有0℃以上的玻璃化转变温度Tg。Condition (ii): It does not have a structural unit derived from acrylonitrile and has a glass transition temperature Tg of 0°C or higher. 2.一种黏合片，其具备：2. An adhesive sheet comprising: 基材；及substrate; and 权利要求1所述的膜状黏合剂，设置于所述基材的一个面上。The film-like adhesive according to claim 1, which is provided on one surface of the base material. 3.根据权利要求2所述的黏合片，其中，3. The adhesive sheet according to claim 2, wherein 所述基材为切割带。The substrate is a dicing tape. 4.一种半导体装置，其具备：4. A semiconductor device comprising: 半导体元件；semiconductor components; 搭载所述半导体元件的支承部件；及a support member on which the semiconductor element is mounted; and 黏合部件，设置于所述半导体元件及所述支承部件之间，并黏合所述半导体元件与所述支承部件，an adhesive member provided between the semiconductor element and the supporting member, and bonding the semiconductor element and the supporting member, 所述黏合部件为权利要求1所述的膜状黏合剂或其固化物。The said adhesive member is the film adhesive of Claim 1 or its hardened|cured material.
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