CN113458036A - Method for cleaning ceramic target - Google Patents
Method for cleaning ceramic target Download PDFInfo
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- CN113458036A CN113458036A CN202110813219.3A CN202110813219A CN113458036A CN 113458036 A CN113458036 A CN 113458036A CN 202110813219 A CN202110813219 A CN 202110813219A CN 113458036 A CN113458036 A CN 113458036A
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- cleaning
- ceramic target
- target material
- drying
- wiping
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- 239000000919 ceramic Substances 0.000 title claims abstract description 118
- 238000004140 cleaning Methods 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000013077 target material Substances 0.000 claims abstract description 122
- 238000001035 drying Methods 0.000 claims abstract description 46
- 238000007664 blowing Methods 0.000 claims abstract description 36
- 238000004506 ultrasonic cleaning Methods 0.000 claims abstract description 36
- 238000004544 sputter deposition Methods 0.000 claims abstract description 34
- 239000007788 liquid Substances 0.000 claims abstract description 30
- 238000001291 vacuum drying Methods 0.000 claims abstract description 27
- 239000003960 organic solvent Substances 0.000 claims abstract description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 20
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 14
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 14
- 239000012498 ultrapure water Substances 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000007654 immersion Methods 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005507 spraying Methods 0.000 claims description 8
- 238000009461 vacuum packaging Methods 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052799 carbon Inorganic materials 0.000 claims description 7
- 239000002131 composite material Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- MNXNLFUKHPLPES-UHFFFAOYSA-N Cicerin Chemical compound C1OC2=CC(O)=CC(O)=C2C(=O)C1C1=CC(OCO2)=C2C=C1OC MNXNLFUKHPLPES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005488 sandblasting Methods 0.000 claims description 3
- 101710191235 Cicerin Proteins 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 13
- 230000003749 cleanliness Effects 0.000 abstract description 7
- 239000000428 dust Substances 0.000 abstract description 7
- 239000000243 solution Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 239000002253 acid Substances 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 239000003921 oil Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000007651 thermal printing Methods 0.000 description 1
- 238000010407 vacuum cleaning Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B1/00—Cleaning by methods involving the use of tools
- B08B1/10—Cleaning by methods involving the use of tools characterised by the type of cleaning tool
- B08B1/14—Wipes; Absorbent members, e.g. swabs or sponges
- B08B1/143—Wipes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
- F26B21/001—Drying-air generating units, e.g. movable, independent of drying enclosure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a cleaning method of a ceramic target, which comprises the following steps: wiping and cleaning the surface of the ceramic target material; carrying out ultrasonic cleaning on the treated ceramic target by adopting an organic solvent; and (4) carrying out blowing drying and vacuum drying on the treated ceramic target material in sequence to obtain the cleaned ceramic target material. According to the method, according to the material characteristics of the ceramic target, oil stains, dirt, dust and the like on the surface of the target are fully removed in a wiping cleaning mode and an ultrasonic cleaning mode in sequence, and then cleaning liquid is removed in a drying mode such as blowing and vacuum modes, so that the cleanliness of the surface of the target is ensured, the sputtering process is stable, and the use requirements are met; in the method, blowing and drying are carried out before vacuum drying, so that the cleaning liquid components on the surface of the target can be quickly dried, and the problem that liquid marks are easily formed after long-time liquid residue is avoided; the method is simple to operate, low in cleaning cost and particularly suitable for cleaning the ceramic target material.
Description
Technical Field
The invention belongs to the technical field of target preparation, and relates to a method for cleaning a ceramic target.
Background
With the rapid development of the semiconductor industry, the demand of coating materials as important materials for manufacturing semiconductor electronic devices is increasing. The target material is used as an important coating material, the main preparation method is Physical Vapor Deposition (PVD), the most common method is sputtering coating, and the target material has wide application in the fields of integrated circuits, flat panel displays, thermal printing, optical devices and the like.
In the sputtering coating process, the target material directly participates in sputtering, if foreign matters such as dirt, oil, dust and the like are adhered to the surface of the target material, arc discharge can be generated, splash is easily generated in the sputtering process, the splash is adhered to a substrate or a coating film, the coating quality can be reduced, the product yield is reduced, and the production cost is increased; therefore, the cleanliness of the target material has an important influence on the quality of sputtering. As an important target material, the ceramic target material is easy to adsorb impurities and oil stains due to the special internal structure and material characteristics, dust is easily generated on the surface, and cleaning liquid residues exist.
CN 109022792a discloses a method for treating a target material to be treated, which comprises: providing a target material to be treated; performing first acid washing treatment on the target material to be treated through a first acid solution to form an initial target material, wherein the first acid solution and the target material to be treated generate a first chemical reaction to remove partial material on the surface of the target material; and carrying out second acid washing treatment on the initial target through a second acid solution, wherein the second acid solution and the initial target generate a second chemical reaction, and part of the material on the surface of the initial target is removed, and the rate of the second chemical reaction is smaller than that of the first chemical reaction. The method emphasizes the acid pickling treatment of the waste target material, is mainly suitable for cleaning metal or alloy target materials, and is not suitable for ceramic target materials.
CN 110670083a discloses a method for cleaning a target, comprising the following steps: coating a cleaning agent on the surface of the target material, and then brushing; cleaning the cleaned target material by ultrasonic waves; and blowing the moisture on the surface of the target material subjected to ultrasonic cleaning by using inert gas, and then carrying out vacuum drying treatment to obtain the cleaned target material. The method adopts a steel brush scrubbing mode to clean the target material, so that the surface of the target material is easily damaged, and the ultrasonic cleaning adopts ultrapure water as a medium due to the product characteristics of the ceramic target material, so that a good cleaning effect cannot be achieved.
In summary, for the selection of the cleaning method of the ceramic target, reasonable operation steps are also required to be selected according to the material and the surface characteristics of the target, so as to ensure the cleanliness of the surface of the cleaned target.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to provide a method for cleaning a ceramic target, which is characterized in that according to the material characteristics of the target, oil stains, dirt, dust and the like on the surface of the target are fully removed by sequentially adopting wiping cleaning and ultrasonic cleaning modes, and then cleaning liquid is removed by drying modes such as blowing and vacuum cleaning, so that the cleanliness of the surface of the target is ensured, the sputtering process is stable, and the use requirements are met.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a cleaning method of a ceramic target, which comprises the following steps:
(1) wiping and cleaning the surface of the ceramic target material;
(2) carrying out ultrasonic cleaning on the ceramic target treated in the step (1) by adopting an organic solvent;
(3) and (3) carrying out blowing drying and vacuum drying on the ceramic target material treated in the step (2) in sequence to obtain the cleaned ceramic target material.
In the invention, the target material is required to be sputtered and coated after being processed, but stains often appear on the sputtering surface to influence the stability of the sputtering process and the coating quality, so that the target material is required to be cleaned; aiming at the material characteristics of the ceramic target material, impurities and oil stains are easy to adsorb, a multi-stage cleaning process is correspondingly adopted, firstly, the surface is cleaned, the impurities can be preliminarily removed, meanwhile, dark stains are erased, then, an organic solvent is adopted for ultrasonic cleaning, organic components adhered to the surface of the target material are fully removed under the action of ultrasonic oscillation, then, the operations of blowing, drying and vacuum drying are adopted, cleaning liquid components on the surface of the target material are quickly dried, the problem that liquid marks are easily formed after liquid is remained for a long time is avoided, the cleanliness of the surface of the target material is ensured, the magnetron sputtering process is enabled to stably operate, and the use requirements are met.
The following technical solutions are preferred technical solutions of the present invention, but not limited to the technical solutions provided by the present invention, and technical objects and advantageous effects of the present invention can be better achieved and achieved by the following technical solutions.
As a preferred technical solution of the present invention, the ceramic target in step (1) includes any one of a silicon carbide target, a silicon nitride target, or a carbon/silicon carbide composite target, or a combination of at least two of them, and typical but non-limiting examples of the combination are: a combination of a silicon carbide target and a silicon nitride target, a combination of a silicon carbide target and a carbon/silicon carbide composite target, a combination of a silicon carbide target, a silicon nitride target and a carbon/silicon carbide composite target, and the like.
Preferably, the ceramic target in step (1) comprises a target sputtering surface, a sand blasting area and a groove area.
In the invention, the target material is usually welded with a back plate to form a target material assembly when being cleaned, sand blasting is usually carried out on the edge of a sputtering surface of the target material in order to facilitate the sputtering application of the target material, and a ring groove or a hole groove is also arranged on the target material assembly in order to facilitate the installation and belongs to the surface to be cleaned; in the target assembly, the surface of the back plate part is mainly a mounting surface and needs to be cleaned.
As a preferable technical solution of the present invention, the wiping and cleaning in step (1) is: ultrapure water is sprayed on the sputtering surface of the ceramic target material, and then the sputtering surface is wiped by adopting Wiscolecan sponge.
Preferably, the end point of the wiping cleaning in the step (1) is that the surface of the wiped cicerin sponge after wiping has no dark marks.
The ultrapure water sprayed on the surface of the target material is water with the resistivity of 18M omega cm, the ultrapure water hardly contains impurities, the target material cannot be cleaned and introduced with the impurities, and the impurities such as dust, stains and the like on the surface can be conveniently removed by wetting the surface of the target material when the surface of the target material is cleaned by using a cleaning sponge until no obvious stains exist on the surface of the cleaning sponge.
As a preferable technical solution of the present invention, the ceramic target is immersed in an organic solvent during the ultrasonic cleaning in the step (2).
Preferably, the organic solvent comprises any one of isopropanol, n-propanol or absolute ethanol or a combination of at least two of these, typical but non-limiting examples being: a combination of isopropanol and n-propanol, a combination of n-propanol and absolute ethanol, a combination of isopropanol, n-propanol and absolute ethanol, and the like.
Preferably, the ceramic target has a depth of immersion of at least 1cm, such as 1cm, 1.5cm, 2cm, 2.5cm, or 3cm, but is not limited to the recited values, and other values not recited within this range are equally applicable.
In the invention, because of the product characteristics of the ceramic target material, impurities such as cutting fluid and the like are easy to adsorb in the processing process and are difficult to clean by water, an organic solvent can be adopted for cleaning, and the organic solvent also needs to be selected from the types which are relatively easy to volatilize, so that the problem that the solvent is remained on the surface of the target material after cleaning and is difficult to remove is avoided.
In a preferred embodiment of the present invention, the power of the ultrasonic cleaning in step (2) is 1500 to 2000W, for example 1500W, 1600W, 1700W, 1800W, 1900W or 2000W, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
Preferably, the temperature of the ultrasonic cleaning in the step (2) is 20 to 25 ℃, for example, 20 ℃, 21 ℃, 22 ℃, 23 ℃, 24 ℃ or 25 ℃, but is not limited to the recited values, and other values not recited in the numerical range are also applicable.
Preferably, the ultrasonic cleaning time in step (2) is 16-25 min, such as 16min, 18min, 20min, 21min, 22min, 24min or 25min, but not limited to the recited values, and other values not recited in the range of the recited values are also applicable.
As a preferable technical scheme of the present invention, the purging and drying in step (3) is performed by purging and drying the ceramic target with compressed gas.
Preferably, the compressed gas comprises an inert gas and/or nitrogen.
Preferably, the pressure of the compressed gas is 0.3 to 0.5MPa, such as 0.3MPa, 0.35MPa, 0.4MPa, 0.45MPa or 0.5MPa, but not limited to the recited values, and other values not recited within the range of values are also applicable.
In a preferred embodiment of the present invention, the time for the purge drying in step (3) is at least 2min, for example, 2min, 2.5min, 3min, 3.5min, 4min, 4.5min, or 5min, but is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable, and preferably 2 to 5 min.
Preferably, the end point of the purging and drying in the step (3) is that no obvious liquid mark is marked on the surface of the ceramic target material.
According to the invention, a blowing drying mode is adopted before vacuum drying, and under the action of gas blowing, the cleaning liquid components on the surface of the target can be quickly dried, so that the problem that liquid marks are easily formed after long-time liquid residue is avoided.
In a preferred embodiment of the present invention, the temperature of the vacuum drying in the step (3) is 60 to 90 ℃, for example, 60 ℃, 65 ℃, 70 ℃, 75 ℃, 80 ℃, 85 ℃ or 90 ℃, but the temperature is not limited to the above-mentioned values, and other values not shown in the above-mentioned range are also applicable.
Preferably, the vacuum drying pressure in step (3) is-0.09 MPa to-0.1 MPa, such as-0.09 MPa, -0.092MPa, -0.095MPa, -0.098MPa or-0.1 MPa, but not limited to the recited values, and other values not recited in the range of the values are also applicable.
Preferably, the vacuum drying time in step (3) is 45-75 min, such as 45min, 50min, 55min, 60min, 65min, 70min or 75min, but not limited to the recited values, and other values not recited in the range of the recited values are also applicable.
As a preferable technical scheme of the invention, the ceramic target is vacuum-dried and then vacuum-packaged.
Preferably, the ceramic target is vacuum packed within 90min after being taken out, for example, 90min, 80min, 70min, 60min, 50min, 40min or 30min, but not limited to the values listed, and other values not listed in the range of the values are also applicable.
As a preferred technical scheme of the invention, the method comprises the following steps:
(1) wiping and cleaning the surface of the ceramic target, wherein the wiping and cleaning comprises the following steps: spraying ultrapure water on the sputtering surface of the ceramic target material, and wiping the sputtering surface by using Wicai sponge, wherein the wiping and cleaning end point is that no dark mark is left on the surface of the Wicai sponge after wiping;
(2) carrying out ultrasonic cleaning on the ceramic target material treated in the step (1) by adopting an organic solvent, wherein the ceramic target material is immersed in the organic solvent during the ultrasonic cleaning, the immersion depth is at least 1cm, the ultrasonic cleaning power is 1500-2000W, the temperature is 20-25 ℃, and the time is 16-25 min;
(3) and (3) blowing and drying the ceramic target material treated in the step (2) by using compressed gas, wherein the compressed gas comprises inert gas and/or nitrogen, the pressure of the compressed gas is 0.3-0.5 MPa, the blowing and drying time is at least 2min, the end point of the blowing and drying is that no liquid mark exists on the surface of the ceramic target material, then carrying out vacuum drying, the temperature of the vacuum drying is 60-90 ℃, the pressure is-0.09-0.1 MPa, and the time is 45-75 min, and then carrying out vacuum packaging to obtain the cleaned ceramic target material.
Compared with the prior art, the invention has the following beneficial effects:
(1) according to the method, according to the material characteristics of the ceramic target, a multi-stage cleaning process is adopted, oil stains, dirt, dust and the like on the surface of the target are fully removed in a wiping cleaning mode and an ultrasonic cleaning mode in sequence, and then cleaning liquid is removed in a drying mode of blowing, vacuum and the like, so that the cleanliness of the surface of the target is ensured, and the cleaning rate can reach more than 99.9%, so that the sputtering process is stable, and the use requirement is met;
(2) in the method, the purging drying is carried out before the vacuum drying, so that the cleaning liquid on the surface of the target can be quickly dried, and the problem that liquid marks are easily formed after the liquid is left for a long time is solved;
(3) the method disclosed by the invention is simple to operate, low in cleaning cost and especially suitable for cleaning the ceramic target material.
Detailed Description
In order to better illustrate the present invention and facilitate the understanding of the technical solutions of the present invention, the present invention is further described in detail below. However, the following examples are only simple examples of the present invention and do not represent or limit the scope of the present invention, which is defined by the claims.
The specific embodiment of the invention provides a cleaning method of a ceramic target material, which comprises the following steps:
(1) wiping and cleaning the surface of the ceramic target material;
(2) carrying out ultrasonic cleaning on the ceramic target treated in the step (1) by adopting an organic solvent;
(3) and (3) carrying out blowing drying and vacuum drying on the ceramic target material treated in the step (2) in sequence to obtain the cleaned ceramic target material.
The following are typical but non-limiting examples of the invention:
example 1:
the embodiment provides a cleaning method of a ceramic target, which comprises the following steps:
(1) wiping and cleaning the surface of a ceramic target material, wherein the ceramic target material is a carbon/silicon carbide composite target material, and the wiping and cleaning comprises the following steps: spraying ultrapure water on the sputtering surface of the ceramic target material, and wiping the sputtering surface by using Wicai sponge, wherein the wiping and cleaning end point is that no dark mark is left on the surface of the Wicai sponge after wiping;
(2) ultrasonically cleaning the ceramic target material treated in the step (1) by using isopropanol, wherein the ceramic target material is immersed in an isopropanol solution during ultrasonic cleaning, the immersion depth is 2cm, the ultrasonic cleaning power is 1800W, the temperature is 20 ℃, and the time is 20 min;
(3) and (3) blowing and drying the ceramic target material treated in the step (2) by adopting compressed nitrogen, wherein the pressure of the compressed nitrogen is 0.4MPa, the blowing and drying time is 2.5min, the blowing and drying end point is that no obvious liquid mark exists on the surface of the ceramic target material, then carrying out vacuum drying at the temperature of 70 ℃, the pressure of-0.1 MPa and the time of 60min, taking out the dried target material, and then completing vacuum packaging within 90min to obtain the cleaned ceramic target material.
Example 2:
the embodiment provides a cleaning method of a ceramic target, which comprises the following steps:
(1) wiping and cleaning the surface of a ceramic target material, wherein the ceramic target material is a carbon/silicon carbide composite target material, and the wiping and cleaning comprises the following steps: spraying ultrapure water on the sputtering surface of the ceramic target material, and wiping the sputtering surface by using Wicai sponge, wherein the wiping and cleaning end point is that no dark mark is left on the surface of the Wicai sponge after wiping;
(2) ultrasonically cleaning the ceramic target material treated in the step (1) by using isopropanol, wherein the ceramic target material is immersed in an isopropanol solution during ultrasonic cleaning, the immersion depth is 1cm, the ultrasonic cleaning power is 2000W, the temperature is 22 ℃, and the time is 16 min;
(3) and (3) blowing and drying the ceramic target material treated in the step (2) by adopting compressed argon, wherein the pressure of the compressed argon is 0.3MPa, the blowing and drying time is 3min, the blowing and drying end point is that no obvious liquid mark exists on the surface of the ceramic target material, then carrying out vacuum drying at the temperature of 60 ℃, the pressure of-0.095 MPa and the time of 75min, taking out the target material, and then completing vacuum packaging within 80min to obtain the cleaned ceramic target material.
Example 3:
the embodiment provides a cleaning method of a ceramic target, which comprises the following steps:
(1) wiping and cleaning the surface of a ceramic target material, wherein the ceramic target material is a silicon carbide target material, and the wiping and cleaning comprises the following steps: spraying ultrapure water on the sputtering surface of the ceramic target material, and wiping the sputtering surface by using Wicai sponge, wherein the wiping and cleaning end point is that no dark mark is left on the surface of the Wicai sponge after wiping;
(2) ultrasonically cleaning the ceramic target processed in the step (1) by adopting absolute ethyl alcohol, wherein the ceramic target is immersed into an absolute ethyl alcohol solution during ultrasonic cleaning, the immersion depth is 2.5cm, the ultrasonic cleaning power is 1500W, the temperature is 25 ℃, and the time is 25 min;
(3) and (3) blowing and drying the ceramic target material treated in the step (2) by adopting compressed nitrogen, wherein the pressure of the compressed nitrogen is 0.5MPa, the blowing and drying time is 2min, the blowing and drying end point is that no obvious liquid mark exists on the surface of the ceramic target material, then carrying out vacuum drying at the temperature of 90 ℃, the pressure of-0.09 MPa and the time of 45min, taking out the target material, and then completing vacuum packaging within 60min to obtain the cleaned ceramic target material.
Example 4:
the embodiment provides a cleaning method of a ceramic target, which comprises the following steps:
(1) wiping and cleaning the surface of a ceramic target material, wherein the ceramic target material is a silicon nitride target material, and the wiping and cleaning are as follows: spraying ultrapure water on the sputtering surface of the ceramic target material, and wiping the sputtering surface by using Wicai sponge, wherein the wiping and cleaning end point is that no dark mark is left on the surface of the Wicai sponge after wiping;
(2) ultrasonically cleaning the ceramic target processed in the step (1) by adopting absolute ethyl alcohol and isopropanol, wherein the ceramic target is immersed into a mixed solution of the absolute ethyl alcohol and the isopropanol with the volume ratio of 1:1 during ultrasonic cleaning, the immersion depth is 1.5cm, the ultrasonic cleaning power is 1600W, the temperature is 24 ℃, and the time is 22 min;
(3) and (3) blowing and drying the ceramic target material treated in the step (2) by adopting compressed nitrogen, wherein the pressure of the compressed nitrogen is 0.45MPa, the blowing and drying time is 3.5min, the blowing and drying end point is that no obvious liquid mark exists on the surface of the ceramic target material, then carrying out vacuum drying at the temperature of 80 ℃, the pressure of-0.092 MPa and the time of 50min, taking out the target material, and then completing vacuum packaging within 70min to obtain the cleaned ceramic target material.
Example 5:
the embodiment provides a cleaning method of a ceramic target, which comprises the following steps:
(1) wiping and cleaning the surface of a ceramic target material, wherein the ceramic target material is a carbon/silicon carbide composite target material, and the wiping and cleaning comprises the following steps: spraying ultrapure water on the sputtering surface of the ceramic target material, and wiping the sputtering surface by using Wicai sponge, wherein the wiping and cleaning end point is that no dark mark is left on the surface of the Wicai sponge after wiping;
(2) ultrasonically cleaning the ceramic target material treated in the step (1) by adopting n-propanol, wherein the ceramic target material is immersed in an n-propanol solution during ultrasonic cleaning, the immersion depth is 3cm, the ultrasonic cleaning power is 1700W, the temperature is 21 ℃, and the time is 18 min;
(3) and (3) blowing and drying the ceramic target material treated in the step (2) by adopting compressed neon, wherein the pressure of the compressed neon is 0.35MPa, the blowing and drying time is 4min, the blowing and drying end point is that no obvious liquid mark exists on the surface of the ceramic target material, then carrying out vacuum drying, wherein the temperature of the vacuum drying is 75 ℃, the pressure is-0.098 MPa, and the time is 70min, taking out the target material, and then completing vacuum packaging within 50min to obtain the cleaned ceramic target material.
In examples 1 to 5, the method was used to clean the ceramic target, and after the cleaning, the target surface was clean, no stain, no imprint residue, no smell of cleaning solution remained, and the cleaning rate was up to 99.9% or more.
Comparative example 1:
this comparative example provides a cleaning method of a ceramic target material, which is referred to the method in example 1, except that: and (2) carrying out ultrasonic cleaning by adopting ultrapure water.
In this comparative example, since the surface of the ceramic target was cleaned with ultra pure water by ultrasonic wave, the adsorbed organic components were difficult to be sufficiently cleaned with water due to the characteristics of the material, and particularly, the region where the grooves or the sandblast existed was difficult to be cleaned, and the surface of the target was still left with impurities such as stains after two-stage drying, and the cleaning rate was only 98%.
Comparative example 2:
this comparative example provides a cleaning method of a ceramic target material, which is referred to the method in example 1, except that: and (4) performing blowing drying in the step (3), and directly performing vacuum drying.
In the comparative example, the ceramic target is directly dried in vacuum after being cleaned, so that the cleaning liquid adsorbed on the surface of the target has a low drying rate, marks are easily left on the surface of the target after drying, the cleaning rate is only 99.2%, and the stability of the sputtering process of the target is easily influenced.
According to the method, according to the material characteristics of the ceramic target material, a multi-stage cleaning process is adopted, oil stains, dirt, dust and the like on the surface of the target material are fully removed in a wiping cleaning mode and an ultrasonic cleaning mode in sequence, and then cleaning liquid is removed in drying modes such as blowing, vacuum and the like, so that the cleanliness of the surface of the target material is ensured, the cleaning rate can reach more than 99.9%, the sputtering process is ensured to be stable, and the use requirement is met; in the method, blowing and drying are carried out before vacuum drying, so that the cleaning liquid components on the surface of the target can be quickly dried, and the problem that liquid marks are easily formed after long-time liquid residue is avoided; the method is simple to operate, low in cleaning cost and particularly suitable for cleaning the ceramic target material.
The applicant states that the present invention is illustrated in detail by the above examples, but the present invention is not limited to the above detailed methods, i.e. it is not meant that the present invention must rely on the above detailed methods for its implementation. It will be apparent to those skilled in the art that any modification, equivalent substitution of the process of the invention and addition of ancillary operations, selection of specific means, etc., of the present invention are within the scope and disclosure of the invention.
Claims (10)
1. The method for cleaning the ceramic target is characterized by comprising the following steps of:
(1) wiping and cleaning the surface of the ceramic target material;
(2) carrying out ultrasonic cleaning on the ceramic target treated in the step (1) by adopting an organic solvent;
(3) and (3) carrying out blowing drying and vacuum drying on the ceramic target material treated in the step (2) in sequence to obtain the cleaned ceramic target material.
2. The cleaning method according to claim 1, wherein the ceramic target in step (1) comprises any one of or a combination of at least two of a silicon carbide target, a silicon nitride target or a carbon/silicon carbide composite target;
preferably, the surface of the ceramic target in the step (1) comprises a target sputtering surface, a sand blasting area and a groove area.
3. The cleaning method according to claim 1 or 2, wherein the wiping cleaning of step (1) is: spraying ultrapure water on the sputtering surface of the ceramic target material, and wiping the sputtering surface by adopting Wiscolecan sponge;
preferably, the end point of the wiping cleaning in the step (1) is that the surface of the wiped cicerin sponge after wiping has no dark marks.
4. The cleaning method according to any one of claims 1 to 3, wherein the ceramic target is immersed in an organic solvent during the ultrasonic cleaning in the step (2);
preferably, the organic solvent comprises any one of isopropanol, n-propanol or absolute ethanol or a combination of at least two of the above;
preferably, the ceramic target has a depth of immersion of at least 1 cm.
5. The cleaning method according to any one of claims 1 to 4, wherein the power of the ultrasonic cleaning in the step (2) is 1500 to 2000W;
preferably, the temperature of the ultrasonic cleaning in the step (2) is 20-25 ℃;
preferably, the time of the ultrasonic cleaning in the step (2) is 16-25 min.
6. The cleaning method according to any one of claims 1 to 5, wherein the purge drying in step (3) is performed by purging and drying the ceramic target with compressed gas;
preferably, the compressed gas comprises an inert gas and/or nitrogen;
preferably, the pressure of the compressed gas is 0.3-0.5 MPa.
7. The cleaning method according to any one of claims 1 to 6, wherein the time for the purge drying in the step (3) is at least 2min, preferably 2 to 5 min;
preferably, the end point of the purging and drying in the step (3) is that the surface of the ceramic target has no liquid mark.
8. The cleaning method according to any one of claims 1 to 7, wherein the temperature of the vacuum drying in the step (3) is 60 to 90 ℃;
preferably, the pressure of the vacuum drying in the step (3) is-0.09 to-0.1 MPa;
preferably, the vacuum drying time in the step (3) is 45-75 min.
9. The cleaning method according to any one of claims 1 to 8, wherein the ceramic target is vacuum-dried and then vacuum-packed;
preferably, the ceramic target is taken out and then vacuum packaging is completed within 90 min.
10. A cleaning method according to any one of claims 1-9, characterized in that the cleaning method comprises the steps of:
(1) wiping and cleaning the surface of the ceramic target, wherein the wiping and cleaning comprises the following steps: spraying ultrapure water on the sputtering surface of the ceramic target material, and wiping the sputtering surface by using Wicai sponge, wherein the wiping and cleaning end point is that no dark mark is left on the surface of the Wicai sponge after wiping;
(2) carrying out ultrasonic cleaning on the ceramic target material treated in the step (1) by adopting an organic solvent, wherein the ceramic target material is immersed in the organic solvent during the ultrasonic cleaning, the immersion depth is at least 1cm, the ultrasonic cleaning power is 1500-2000W, the temperature is 20-25 ℃, and the time is 16-25 min;
(3) and (3) blowing and drying the ceramic target material treated in the step (2) by using compressed gas, wherein the compressed gas comprises inert gas and/or nitrogen, the pressure of the compressed gas is 0.3-0.5 MPa, the blowing and drying time is at least 2min, the end point of the blowing and drying is that no liquid mark exists on the surface of the ceramic target material, then carrying out vacuum drying, the temperature of the vacuum drying is 60-90 ℃, the pressure is-0.09-0.1 MPa, and the time is 45-75 min, and then carrying out vacuum packaging to obtain the cleaned ceramic target material.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114714257A (en) * | 2022-03-21 | 2022-07-08 | 合肥江丰电子材料有限公司 | Sand blasting method for target material |
| CN115846289A (en) * | 2022-11-22 | 2023-03-28 | 富乐德科技发展（天津）有限公司 | Cleaning method for removing deposited pollutants on surface of ceramic layer |
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