CN113453893A - Protective sheet for semiconductor processing and method for manufacturing semiconductor device - Google Patents
Protective sheet for semiconductor processing and method for manufacturing semiconductor device Download PDFInfo
- Publication number
- CN113453893A CN113453893A CN202080015285.XA CN202080015285A CN113453893A CN 113453893 A CN113453893 A CN 113453893A CN 202080015285 A CN202080015285 A CN 202080015285A CN 113453893 A CN113453893 A CN 113453893A
- Authority
- CN
- China
- Prior art keywords
- intermediate layer
- meth
- acrylate
- protective sheet
- semiconductor processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Adhesive Tapes (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The present invention provides a protective sheet for semiconductor processing, which comprises a base material, an intermediate layer on the base material, and an adhesive layer in this order, wherein the residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds is 300Pa or less.
Description
Technical Field
The present invention relates to a protective sheet for semiconductor processing and a method for manufacturing a semiconductor device. In particular, the present invention relates to a protective sheet for semiconductor processing suitable for suppressing warpage of a semiconductor wafer, and a method for manufacturing a semiconductor device using the protective sheet for semiconductor processing.
Background
In many electronic devices, a semiconductor device is mounted with semiconductor chips obtained by singulating a semiconductor wafer on which a circuit is formed. Electronic devices have rapidly become smaller and more versatile, and semiconductor chips have been required to be smaller, thinner, and more dense. In order to reduce the size and thickness of a chip, it is common to form a circuit on the front surface of a semiconductor wafer and then polish the back surface of the semiconductor wafer to adjust the thickness of the chip.
When polishing the Back surface of a semiconductor wafer, a protective sheet called a Back grinding tape (Back grinding tape) is attached to the wafer surface in order to protect the circuit on the wafer surface and support the semiconductor wafer. However, the semiconductor wafer after back grinding is very thin and tends to warp together with the adhesive tape. If the semiconductor wafer is warped, the semiconductor wafer is easily broken and is difficult to be transferred to the next step.
For example, patent document 1 discloses a surface protective sheet in which a high stress relaxation property is imparted to a base material in order to suppress warpage of a semiconductor wafer.
Documents of the prior art
Patent document
Patent document 1: international publication No. 2016/063827
Disclosure of Invention
Technical problem to be solved by the invention
In patent document 1, the rigidity of the base material is reduced in order to impart high stress relaxation characteristics to the base material. However, if the rigidity of the base material is low, the rigidity of the protective sheet as a whole is lowered, and if the semiconductor wafer is thinned by polishing the back surface of the semiconductor wafer, there is a problem that the semiconductor wafer cannot be sufficiently supported. Further, when the tape is peeled off after polishing, there is a problem that peeling failure is caused by stretching of the base material.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a protective sheet for semiconductor processing that can suppress warpage after thinning a semiconductor wafer, and a method for manufacturing a semiconductor device using the protective sheet for semiconductor processing.
Means for solving the problems
The scheme of the invention is as follows:
[1] a protective sheet for semiconductor processing comprising a base material, an intermediate layer on the base material, and an adhesive layer in this order,
the residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds is 300Pa or less.
[2]Such as [1]]The protective sheet for semiconductor processing, wherein the product of the tensile storage modulus of the base material and the thickness of the base material is 3.5X 104N/m or more.
[3] The protective sheet for semiconductor processing according to [1] or [2], wherein the shear storage modulus of the intermediate layer at 65 ℃ is 25000Pa or less.
[4] The protective sheet for semiconductor processing according to any one of [1] to [3], wherein the loss tangent of the intermediate layer at 65 ℃ is 1.0 or more.
[5] A method for manufacturing a semiconductor device, comprising:
a step of attaching the protective sheet for semiconductor processing according to any one of [1] to [4] to a semiconductor wafer; and
and a step of reducing the rigidity of the semiconductor wafer to which the protective sheet for semiconductor processing is attached.
Effects of the invention
According to the present invention, it is possible to provide a protective sheet for semiconductor processing that can suppress warpage after thinning a semiconductor wafer, and a method for manufacturing a semiconductor device using the protective sheet for semiconductor processing.
Drawings
Fig. 1 is a schematic sectional view showing one example of the protective sheet for semiconductor processing of the present embodiment.
Fig. 2 is a schematic cross-sectional view showing a state in which the protective sheet for semiconductor processing of the present embodiment is attached to the circuit surface of a semiconductor wafer.
Fig. 3A is a schematic cross-sectional view showing a semiconductor wafer after back grinding to which a conventional protective sheet for semiconductor processing is attached.
Fig. 3B is a schematic cross-sectional view showing the semiconductor wafer after back grinding to which the protective sheet for semiconductor processing of the present embodiment is attached.
Fig. 4 is a schematic cross-sectional view for explaining the low residual stress of the intermediate layer in the protective sheet for semiconductor processing according to the present embodiment.
Detailed Description
Hereinafter, the present invention will be described in detail based on specific embodiments in the following order.
(1. protective sheet for semiconductor processing)
As shown in fig. 1, the protective sheet 1 for semiconductor processing according to the present embodiment has a structure in which an intermediate layer 20 and an adhesive layer 30 are stacked in this order on a substrate 10. The protective sheet for semiconductor processing is not limited to the structure shown in fig. 1, and may have other layers as long as the effects of the present invention can be obtained. For example, a release sheet may be formed on the main surface 30a of the adhesive layer 30 in order to protect the adhesive layer 30 until the adhesive layer 30 is attached to an adherend.
As shown in fig. 2, the protective sheet 1 for semiconductor processing according to the present embodiment is used by attaching the main surface 30a of the adhesive layer 30 to the circuit surface 50a of the semiconductor wafer 50. When the protective sheet 1 for semiconductor processing is attached to the semiconductor wafer 50, the protective sheet 1 for semiconductor processing is attached while applying tension to the protective sheet 1 (while stretching the protective sheet 1 for semiconductor processing). As a result, residual stress RS is generated in the attached protective sheet 1 for semiconductor processing. Since the base material is generally higher in rigidity and resists tensile force than the components other than the base material, residual stress is mainly generated in the base material.
Since the base material is stretched at the time of attachment, residual stress generated in the base material acts in the direction in which the base material shrinks. This residual stress is counteracted by the rigidity of the semiconductor crystal before grinding the semiconductor wafer. However, after polishing the semiconductor wafer, the semiconductor wafer becomes thinner, and thus the rigidity of the semiconductor wafer is lowered. As a result, as shown in fig. 3A, after polishing the semiconductor wafer to which the conventional protective sheet 100 for semiconductor processing is attached, residual stress becomes significant, and warpage occurs in the semiconductor wafer 50.
In contrast, since the protective sheet 1 for semiconductor processing of the present embodiment has the characteristics described below, the semiconductor wafer 50 to which the protective sheet 1 for semiconductor processing is attached can suppress warpage even if the thickness is reduced by polishing as shown in fig. 3B. The constituent elements of the protective sheet 1 for semiconductor processing will be described in detail below.
(2. base material)
The base material is not limited as long as it is made of a material capable of supporting a semiconductor wafer. For example, various resin films usable as a base material of a back-grinding tape can be exemplified. The substrate may be a single-layer film composed of 1 resin film or a multilayer film in which a plurality of resin films are laminated.
(2.1 physical Properties of the substrate)
In the present embodiment, the substrate preferably has high rigidity. By making the base material highly rigid, even if the thickness of the semiconductor wafer is reduced by polishing, the wafer can be supported without being damaged. Further, when the tape is peeled after polishing, peeling failure due to stretching of the base material can be suppressed.
In the present embodiment, the rigidity of the base material is evaluated by the product of the tensile storage modulus of the base material and the thickness of the base material. The product of the tensile storage modulus of the base material and the thickness of the base material is preferably 3.5 × 10 from the viewpoint of preventing poor peeling4N/m or more. Further, it is preferable that the product of the tensile storage modulus of the substrate and the thickness of the substrate is 8.0X 105N/m or less.
The preferable range of the substrate thickness varies depending on the tensile storage modulus of the substrate, but in the present embodiment, the substrate thickness is preferably 15 μm or more and 200 μm or less, more preferably 40 μm or more and 150 μm or less.
(2.2 base Material)
When the thickness of the base material is within the above range, the material of the base material is preferably such that the product of the tensile storage modulus of the base material and the thickness of the base material is within the above range. In the present embodiment, there may be mentioned, for example, polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, and wholly aromatic polyesters; a polyamide; a polycarbonate; a polyacetal; modified polyphenylene ether; polyphenylene sulfide; polysulfones; a polyether ketone; biaxially stretched polypropylene, and the like. Among them, polyester is preferable, and polyethylene terephthalate is more preferable.
(3. intermediate layer)
The intermediate layer is a layer disposed between the base material and the adhesive layer. In this embodiment, the intermediate layer is a layer having high stress relaxation property that receives the residual stress of the substrate and can relieve the residual stress in the intermediate layer. As shown in fig. 4, the base material 10 after the semiconductor processing protective sheet 1 is attached is shrunk by residual stress, but since most of the residual stress is relieved in the intermediate layer, warpage of the semiconductor wafer 50 can be suppressed. The intermediate layer may be composed of one layer (single layer) or a plurality of layers of two or more layers.
The thickness of the intermediate layer 20 may be arbitrarily set within a range in which the effects of the present invention can be obtained. In the present embodiment, the thickness of the intermediate layer 20 is preferably 30 μm or more and 600 μm or less, and more preferably 50 μm or more and 400 μm or less. The thickness of the intermediate layer indicates the thickness of the entire intermediate layer. For example, the thickness of the intermediate layer composed of a plurality of layers indicates the total thickness of all layers constituting the intermediate layer.
In the present embodiment, the intermediate layer has the following physical properties.
(3.1 residual stress after holding at 65 ℃ for 300 seconds)
In the present embodiment, the residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds is 300Pa or less. The residual stress received from the substrate is sharply relieved in the intermediate layer and approaches stability after 300 seconds. In addition, protective sheets for semiconductor processing are generally attached to semiconductor wafers at temperatures approaching 65 ℃.
Therefore, when the stress remaining in the intermediate layer after being held at 65 ℃ for 300 seconds is within the above range, the residual stress received from the attached substrate is sufficiently relieved in the intermediate layer. In addition, "residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds" means the residual stress of the intermediate layer measured after the intermediate layer is held at 65 ℃ for 300 seconds.
The residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds is preferably 250Pa or less, and more preferably 200Pa or less. The residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds is preferably 0.1Pa or more.
In the present embodiment, the residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds can be measured in the following manner. The material constituting the intermediate layer was prepared into a sample having a predetermined size, and the sample having a temperature of 65 ℃ was twisted by a dynamic viscoelasticity measuring apparatus to apply shear strain to the sample. The shear stress after the strain was applied for 300 seconds was measured, and the measured shear stress was defined as the residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds.
(shear storage modulus at 3.265 ℃ C.)
In the present embodiment, the shear storage modulus (G') of the intermediate layer at 65 ℃ is preferably 25000Pa or less. The shear storage modulus (G') is one of indices of the ease of deformation (hardness) of the intermediate layer. When the shear storage modulus (G') of the intermediate layer at 65 ℃ is within the above range, the intermediate layer can sufficiently follow the shrinkage of the base material, and thus the warpage of the semiconductor wafer can be suppressed.
The shear storage modulus (G') of the intermediate layer at 65 ℃ is more preferably 2.5X 104Pa or less, more preferably 2.0X 104Pa or less. Further, the shear storage modulus (G') of the intermediate layer at 65 ℃ is preferably 0.3X 104Pa or above.
The shear storage modulus (G') of the intermediate layer at 65 ℃ may be measured by a known method. For example, a sample having a predetermined size is prepared from the intermediate layer, a strain is applied to the sample at a predetermined frequency in a predetermined temperature range by a dynamic viscoelasticity measuring apparatus, the elastic modulus is measured, and the shear storage modulus is calculated from the measured elastic modulus.
(loss tangent at 3.365 ℃ C.)
In the present embodiment, the loss tangent (tan δ) of the intermediate layer at 65 ℃ is preferably 1.0 or more. The loss tangent is a value defined as "loss elastic modulus/storage elastic modulus" and measured by a dynamic viscoelasticity measuring apparatus from a response corresponding to a stress applied to an object. When the loss tangent of the intermediate layer at 65 ℃ is within the above range, the residual stress received from the base material is consumed as heat, and thus warpage of the semiconductor wafer can be suppressed.
The loss tangent of the intermediate layer at 65 ℃ is more preferably 1.0 or more, and still more preferably 1.2 or more. The loss tangent of the intermediate layer at 65 ℃ is preferably 3.0 or less.
The loss tangent of the intermediate layer at 65 ℃ may be measured by a known method, similarly to the shear storage modulus. For example, a sample having a predetermined size is prepared as the intermediate layer, a strain is applied to the sample at a predetermined frequency in a predetermined temperature range by a dynamic viscoelasticity measuring apparatus, the elastic modulus is measured, and the loss tangent is calculated from the measured elastic modulus.
(3.4 gel fraction of intermediate layer)
In the present embodiment, the gel fraction of the intermediate layer is preferably 55% or less. When the gel fraction is within the above range, the intermediate layer has flexibility and can sufficiently follow the shrinkage of the base material, and therefore the warpage of the semiconductor wafer can be suppressed.
The gel fraction of the intermediate layer is more preferably 50% or less, and still more preferably 45% or less. The gel fraction of the intermediate layer is preferably 1% or more.
(3.5 composition for intermediate layer)
The intermediate layer may have any composition as long as it has the above-described physical properties, and the composition of the intermediate layer is not particularly limited, but in the present embodiment, the intermediate layer is preferably composed of a composition having a resin (composition for an intermediate layer). The composition for the intermediate layer preferably contains the following components.
(3.5.1 urethane (meth) acrylate)
Urethane (meth) acrylate is a compound having at least a (meth) acryloyl group and a urethane bond, and has a property of being polymerized by irradiation with energy rays. In the present embodiment, urethane (meth) acrylate is a component for imparting flexibility to the intermediate layer and imparting a property of reducing residual stress. In the present specification, "(meth) acrylate" is a term used to denote both "acrylate" and "methacrylate", and other similar terms are also used.
The urethane (meth) acrylate may be monofunctional or polyfunctional. In the present embodiment, a polyfunctional urethane (meth) acrylate is preferable, and a bifunctional urethane (meth) acrylate is preferable from the viewpoint of keeping the residual stress of the intermediate layer within the above range.
The urethane (meth) acrylate may be an oligomer, a polymer, or a mixture thereof. In the present embodiment, a urethane (meth) acrylate oligomer is preferable.
The urethane (meth) acrylate can be obtained, for example, by reacting a (meth) acrylate having a hydroxyl group with an isocyanate-terminated urethane prepolymer obtained by reacting a polyol compound with a polyisocyanate compound. The urethane (meth) acrylates may be used singly or in combination of two or more.
The content of the urethane (meth) acrylate in the composition for the intermediate layer is preferably 20% by mass or more, more preferably 25% by mass or more, and still more preferably 30% by mass or more. The content of the urethane (meth) acrylate in the composition for the intermediate layer is preferably 70% by mass or less, more preferably 65% by mass or less, and still more preferably 50% by mass or less.
(3.5.2 polymerizable monomer)
The polymerizable monomer is a polymerizable compound other than the urethane (meth) acrylate, and is preferably a compound polymerizable with other components by irradiation with an energy ray. Specifically, the polymerizable monomer is preferably a compound having at least one (meth) acryloyl group.
Examples of the polymerizable monomer include (meth) acrylates having an alkyl group having 1 to 30 carbon atoms; (meth) acrylates having functional groups such as a hydroxyl group, an amide group, an amino group, and an epoxy group; a (meth) acrylate having an alicyclic structure; a (meth) acrylate having an aromatic structure; (meth) acrylate having a heterocyclic structure; vinyl compounds such as styrene, hydroxyethyl vinyl ether, hydroxybutyl vinyl ether, N-vinylformamide, N-vinylpyrrolidone and N-vinylcaprolactam.
Examples of the (meth) acrylate having an alkyl group having 1 to 30 carbon atoms include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) acrylate, n-pentyl (meth) acrylate, n-hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, n-octyl (meth) acrylate, nonyl (meth) acrylate, decyl (meth) acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate, tridecyl (meth) acrylate, tetradecyl (meth) acrylate, hexadecyl (meth) acrylate, octadecyl (meth) acrylate, eicosyl (meth) acrylate.
Examples of the (meth) acrylate having a functional group include hydroxyl group-containing (meth) acrylates such as 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate; amide group-containing compounds such as (meth) acrylamide, N-dimethyl (meth) acrylamide, N-butyl (meth) acrylamide, N-methylol (meth) acrylamide, N-methylolpropane (meth) acrylamide, N-methoxymethyl (meth) acrylamide, and N-butoxymethyl (meth) acrylamide; amino group-containing (meth) acrylates such as primary amino group-containing (meth) acrylates, secondary amino group-containing (meth) acrylates, and tertiary amino group-containing (meth) acrylates; epoxy group-containing (meth) acrylates such as glycidyl (meth) acrylate, methyl glycidyl (meth) acrylate, and allyl glycidyl ether.
Examples of the (meth) acrylic ester having an alicyclic structure include isobornyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxy (meth) acrylate, cyclohexyl (meth) acrylate, trimethylcyclohexyl (meth) acrylate, and adamantyl (meth) acrylate.
Examples of the (meth) acrylic acid ester having an aromatic structure include phenylhydroxypropyl (meth) acrylate, benzyl (meth) acrylate, and 2-hydroxy-3-phenoxypropyl (meth) acrylate.
Examples of the (meth) acrylate having a heterocyclic structure include tetrahydrofurfuryl (meth) acrylate and (meth) acryloylmorpholine (meth) acrylate).
In the present embodiment, the polymerizable monomer preferably contains a (meth) acrylate having an alkyl group having 1 to 30 carbon atoms and a (meth) acrylate having an alicyclic structure. From the viewpoint of keeping the residual stress of the intermediate layer within the above range, a (meth) acrylate having an alkyl group with 4 to 14 carbon atoms is preferable, and isobornyl (meth) acrylate and trimethylcyclohexyl (meth) acrylate are preferable as the (meth) acrylate having an alicyclic structure.
In addition, when the composition for the intermediate layer contains a crosslinking agent, (meth) acrylate having a functional group reactive with the crosslinking agent is not preferable. This is because the crosslinked structure formed by the crosslinking reaction has a possibility of increasing the residual stress of the intermediate layer. For example, a composition for an intermediate layer containing a polyisocyanate-based crosslinking agent and a (meth) acrylate having a hydroxyl group is not preferable.
The content ratio of the polymerizable monomer in the composition for the intermediate layer is preferably 20% by mass or more, and more preferably 30% by mass or more. The content of the polymerizable monomer in the composition for the intermediate layer is preferably 80% by mass or less, and more preferably 70% by mass or less.
The mass ratio of the urethane (meth) acrylate to the polymerizable monomer (urethane (meth) acrylate/polymerizable monomer) is preferably 20/80 to 80/20, and more preferably 30/70 to 70/30, per 100 parts by mass of the total of the urethane (meth) acrylic acid and the polymerizable monomer.
(3.5.3 photopolymerization initiator)
When the composition for an intermediate layer contains the urethane (meth) acrylate and the polymerizable monomer, the composition for an intermediate layer preferably contains a photopolymerization initiator. By containing a photopolymerization initiator, polymerization can be reliably performed, and an intermediate layer having the above characteristics can be easily obtained.
Examples of the photopolymerization initiator include photopolymerization initiators such as benzoin compounds, acetophenone compounds, acylphosphine oxide (acylphosphine oxide) compounds, titanocene compounds, thioxanthone (thioxanthone) compounds, and peroxide compounds, and photosensitizers such as amines and quinones. Specific examples thereof include 1-hydroxycyclohexyl phenyl ketone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, and 2, 2-dimethoxy-1, 2-diphenylethanone. These photopolymerization initiators may be used singly or in combination of two or more.
The blending amount of the photopolymerization initiator is preferably 0.05 parts by mass or more and 15 parts by mass or less, and more preferably 0.5 parts by mass or more and 10 parts by mass or less, with respect to 100 parts by mass of the total of the urethane (meth) acrylate and the polymerizable monomer.
(3.5.4 chain transfer agent)
The composition for the intermediate layer preferably contains a chain transfer agent. The chain transfer agent can cause a chain transfer reaction, and can adjust the progress of the curing reaction of the intermediate layer composition. By containing a chain transfer agent, a component having a relatively short molecular chain can remain even after curing, and therefore the cured polymer has a structure having relatively flexibility. As a result, the residual stress applied to the intermediate layer can be sufficiently alleviated, and the residual stress of the intermediate layer can be easily controlled within the above range.
Examples of the chain transfer agent include thiol group-containing compounds. Examples of the thiol-containing compound include nonyl mercaptan, 1-dodecyl mercaptan, 1, 2-ethanedithiol, 1, 3-propanedithiol, triazine thiol, triazine dithiol, triazine trithiol, 1,2, 3-propanetrithiol, tetraethylene glycol-bis (3-mercaptopropionate), trimethylolpropane tris (3-mercaptopropionate), pentaerythritol tetrakis (3-mercaptopropionate), pentaerythritol tetramercaptoacetate, dipentaerythritol hexa (3-mercaptopropionate), tris [ (3-mercaptopropionyloxy) -ethyl ] -isocyanurate, 1, 4-bis (3-mercaptobutanoyloxy) butane, pentaerythritol tetrakis (3-mercaptobutyrate), 1,3, 5-tris (3-mercaptobutyloxyethyl) -1,3, 5-triazine-2, 4,6- (1H,3H,5H) -trione. The chain transfer agent may be used singly or in combination of two or more.
The amount of the chain transfer agent to be incorporated is preferably 0.1 to 10 parts by mass, more preferably 0.3 to 5 parts by mass, based on 100 parts by mass of the total of the urethane (meth) acrylate and the polymerizable monomer.
(4. adhesive layer)
The adhesive layer is attached to the circuit surface of the semiconductor wafer, protects the circuit surface before being peeled from the circuit surface, and supports the semiconductor wafer. The adhesive layer may be composed of one layer (single layer) or a plurality of layers of two or more layers. When the adhesive layer has a plurality of layers, the plurality of layers may be the same as or different from each other, and the combination of the layers constituting the plurality of layers is not particularly limited.
The thickness of the adhesive layer is not particularly limited, but is preferably 1 μm or more and 50 μm or less, and more preferably 2 μm or more and 30 μm or less. The thickness of the adhesive layer indicates the thickness of the entire adhesive layer. For example, the thickness of an adhesive layer composed of a plurality of layers means the total thickness of all layers constituting the adhesive layer.
The composition of the adhesive layer is not limited as long as it has such adhesiveness that the circuit surface of the semiconductor wafer can be protected. In the present embodiment, the adhesive layer is preferably composed of, for example, an acrylic adhesive, a urethane adhesive, a rubber adhesive, a silicone adhesive, or the like.
The adhesive layer is preferably formed of an energy ray-curable adhesive. When the adhesive layer of the protective sheet for semiconductor processing is formed of an energy ray-curable adhesive, the protective sheet can be attached to a semiconductor wafer with high adhesion when attached to the semiconductor wafer, and the adhesion can be reduced by irradiation with an energy ray when peeled from the semiconductor wafer. Therefore, the circuit of the semiconductor wafer can be appropriately protected, and the damage of the circuit on the surface of the semiconductor wafer or the transfer of the adhesive to the semiconductor wafer can be prevented when the protective sheet for semiconductor processing is peeled off.
In the present embodiment, the energy ray-curable adhesive is preferably composed of an adhesive composition containing an acrylic adhesive. As the acrylic pressure-sensitive adhesive, an acrylic polymer is preferably used.
The acrylic polymer may be any known acrylic polymer, but in the present embodiment, a functional group-containing acrylic polymer is preferable. The functional group-containing acrylic polymer may be a homopolymer formed from one acrylic monomer, a copolymer formed from a plurality of acrylic monomers, or a copolymer formed from one or more acrylic monomers and a monomer other than the acrylic monomer.
In the present embodiment, the functional group-containing acrylic polymer is preferably an acrylic copolymer obtained by copolymerizing an alkyl (meth) acrylate and a functional group-containing monomer.
Examples of the alkyl (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) acrylate, n-pentyl (meth) acrylate, n-hexyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, isooctyl (meth) acrylate, and n-octyl (meth) acrylate.
The functional group-containing monomer is a monomer having a reactive functional group. The reactive functional group is a functional group that can react with another compound such as a crosslinking agent described later. Examples of the functional group in the functional group-containing monomer include a hydroxyl group, a carboxyl group, and an epoxy group, and a hydroxyl group is preferable.
Examples of the hydroxyl group-containing monomer include hydroxyalkyl (meth) acrylates such as hydroxymethyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (meth) acrylate, and 4-hydroxybutyl (meth) acrylate; non (meth) acrylic unsaturated alcohols (unsaturated alcohols having no (meth) acryloyl skeleton) such as vinyl alcohol and allyl alcohol.
The adhesive composition preferably further contains an energy ray-curable compound having an energy ray-curable group. The energy ray-curable compound having an energy ray-curable group is preferably a compound having one or more selected from an isocyanate group, an epoxy group and a carboxyl group, and more preferably a compound having an isocyanate group.
Examples of the compound having an isocyanate group include 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α, α -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1- (bisacryloxymethyl) ethyl isocyanate; an acryloyl monoisocyanate compound obtained by the reaction of a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth) acrylate; and an acryloyl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound with a polyol compound and hydroxyethyl (meth) acrylate. The isocyanate group is subjected to addition reaction with a hydroxyl group of the functional group-containing acrylic polymer.
Preferably, the adhesive composition further comprises a crosslinking agent. The crosslinking agent can react with the functional group, for example, to crosslink the resins contained in the functional group-containing acrylic polymer with each other.
Examples of the crosslinking agent include isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group), such as toluene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy crosslinking agents (crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine crosslinking agents (crosslinking agents having an aziridinyl group) such as hexa [1- (2-methyl) -azidinyl ] triphosphatriazine; metal chelate crosslinking agents (crosslinking agents having a metal chelate structure) such as aluminum chelate compounds; an isocyanurate-based crosslinking agent (a crosslinking agent having an isocyanurate skeleton), and the like.
The crosslinking agent is preferably an isocyanate-based crosslinking agent from the viewpoint of improving the cohesive force of the adhesive agent and further improving the adhesive force of the adhesive agent layer, and from the viewpoint of easy availability and the like.
The adhesive composition may further contain a photopolymerization initiator. By containing a photopolymerization initiator in the adhesive composition, the curing reaction can be sufficiently performed even by irradiation with energy rays of relatively low energy such as ultraviolet rays.
Examples of the photopolymerization initiator include photoinitiators such as benzoin compounds, acetophenone compounds, acylphosphine oxide compounds, titanocene compounds, thioxanthone compounds, and peroxide compounds, and photosensitizers such as amines and quinones. Specifically, α -hydroxycyclohexyl phenyl ketone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzyl diphenyl sulfide, benzyl dimethyl ketal, tetramethylthiuram monosulfide, azobisisobutyronitrile, bibenzyl, diacetyl, β -chloroanthraquinone, 2,4, 6-trimethylbenzoyldiphenylphosphine oxide, and the like can be illustrated.
(5. method for producing protective sheet for semiconductor processing)
The method for producing the protective sheet for semiconductor processing of the present embodiment is not particularly limited as long as it can form an intermediate layer and an adhesive layer on one surface of a substrate in a laminated manner, and a known method can be used.
First, as a composition for forming the intermediate layer, for example, a composition for the intermediate layer containing the above components or a composition obtained by diluting the composition for the intermediate layer with a solvent or the like is prepared. Similarly, as the adhesive composition for forming the adhesive layer, for example, an adhesive composition containing the above components or a composition obtained by diluting the adhesive composition with a solvent or the like is prepared.
Examples of the solvent include organic solvents such as methyl ethyl ketone, acetone, ethyl acetate, tetrahydrofuran, dioxane, cyclohexane, n-hexane, toluene, xylene, n-propanol, and isopropanol.
Then, a coating film is formed by applying the composition for an intermediate layer or the like onto a substrate by a known method such as a spin coating method, a spray coating method, a bar coating method, a blade coating method, a roll coating method, a blade coating method, a die coating method, a gravure coating method, or the like, and the intermediate layer is formed on the substrate by curing the coating film. In the present embodiment, the curing of the coating film is preferably performed by irradiation with an energy ray. Examples of the energy ray include ultraviolet rays and electron beams, and ultraviolet rays are preferable.
Further, in the present embodiment, it is preferable to perform irradiation of energy rays a plurality of times to cure the coating film. By doing so, the degree of curing of the intermediate layer can be controlled, and the residual stress of the intermediate layer can be easily controlled within the above range.
Specifically, it is preferable to irradiate the energy ray in a state where the coating film is exposed to oxygen, and then further irradiate the energy ray in a state where the coating film is shielded from oxygen.
When the energy ray is ultraviolet ray, the irradiation condition of the ultraviolet ray is preferably such that the illuminance of the ultraviolet ray is 30 to 500mW/cm2More preferably 50-340 mW/cm2Preferably, the dose of the ultraviolet ray irradiation is 100 to 2500mJ/cm2More preferably 150 to 2000mJ/cm2。
When the ultraviolet irradiation is further performed, the illuminance and the irradiation dose under the irradiation conditions are preferably larger than those in the previous irradiation.
The protective sheet for semiconductor processing, in which the intermediate layer and the adhesive layer are sequentially formed on the substrate, is produced by applying an adhesive composition or the like to the intermediate layer thus cured by a known method and drying the applied composition by heating.
Further, the protective sheet for semiconductor processing can also be produced in the following manner. That is, the intermediate layer is formed on the release sheet by curing the coating film formed by applying the intermediate layer composition or the like to the release-treated surface of one release sheet in the manner described above.
The release-treated surface of the other release sheet is coated with an adhesive composition or the like, and heated and dried to form an adhesive layer on the release sheet. Then, the intermediate layer on one release sheet was attached to the substrate, and the release sheet was removed. Next, the intermediate layer is laminated to the adhesive layer on the other release sheet, thereby producing a protective sheet for semiconductor processing having the intermediate layer, the adhesive layer, and the release sheet provided in this order on a substrate. The release sheet may be appropriately removed by peeling before the protective sheet for semiconductor processing is used.
(6. method for manufacturing semiconductor device)
The method for manufacturing a semiconductor device using the protective sheet for semiconductor processing according to the present embodiment is not particularly limited as long as it includes the following steps: a step of attaching the protective sheet for semiconductor processing of the present embodiment to a semiconductor wafer; and a step of reducing the rigidity of the semiconductor wafer to which the protective sheet for semiconductor processing is attached.
As a step of attaching the protective sheet for semiconductor processing of the present embodiment to a semiconductor wafer, for example, a step of attaching the protective sheet for semiconductor processing of the present embodiment to a surface of a semiconductor wafer on which a circuit is formed is preferable.
As a step of reducing the rigidity of the semiconductor wafer, for example, a step of polishing the semiconductor wafer to reduce the thickness of the semiconductor wafer is exemplified.
Hereinafter, a method for manufacturing a semiconductor device, which is a semiconductor device, from a semiconductor wafer, by using a semiconductor wafer, will be described as an example of a method for manufacturing a semiconductor device using the protective sheet for semiconductor processing according to the present embodiment, with reference to fig. 2 to 4.
First, as shown in fig. 2, a protective sheet 1 for semiconductor processing is stuck to a surface (front surface 50a) of a semiconductor wafer on which a circuit is formed, and the circuit surface is protected. At this time, the protective sheet 1 for semiconductor processing is attached to the circuit surface while being stretched. Therefore, residual stress RS acting in the direction in which the substrate shrinks is generated in the protective sheet 1 for semiconductor processing after the attachment, particularly on the substrate having high rigidity. Further, a convex electrode such as a bump or a pillar electrode (pillar electrode) may be formed on the circuit surface to which the protective sheet for semiconductor processing of the present embodiment is attached.
As shown in fig. 4, the substrate 10 is contracted by the residual stress RS, and the residual stress RS generated in the substrate 10 is eliminated, but the residual stress RS is generated in the intermediate layer 20 formed on the substrate by the deformation of the substrate 10. However, in the present embodiment, since the intermediate layer has the above-described characteristics, most of the residual stress is relieved in the intermediate layer and becomes equal to or less than the above-described value. In addition, when the convex electrode is formed on the circuit surface, the intermediate layer can sufficiently follow the step difference of the circuit surface while relieving the residual stress, and the convex electrode can be protected.
Then, the semiconductor wafer with the protective sheet 1 for semiconductor processing attached thereto is subjected to back grinding. As shown in fig. 3B, even if the semiconductor wafer is thinned and the rigidity of the semiconductor wafer is lowered, the residual stress of the protective sheet 1 for semiconductor processing is already reduced, and thus the warpage of the semiconductor wafer can be suppressed. Therefore, the thickness of the semiconductor wafer can be further reduced. Further, the semiconductor wafer can be easily transported to the next step, and the semiconductor wafer can be prevented from being damaged.
The semiconductor wafer after the back grinding can be singulated by a known method to form a plurality of semiconductor chips. The obtained semiconductor chip is mounted on a substrate by a predetermined method to obtain a semiconductor device.
While the embodiments of the present invention have been described above, the present invention is not limited to the above embodiments and can be modified in various ways within the scope of the present invention.
Examples
The present invention will be described in more detail with reference to the following examples, but the present invention is not limited to these examples.
The measurement method and evaluation method in this example are as follows.
(residual stress of intermediate layer)
The composition for an intermediate layer described later was coated on a PET-based release film (manufactured by Lintec Corporation, SP-PET382150, thickness 38 μm) to a thickness of 400 μm by a doctor blade method to form a composition layer for an intermediate layer. Then, the formed composition layer for an intermediate layer was laminated with a PET-based release film (manufactured by Lintec Corporation, SP-PET381130, thickness 38 μm) to shield the composition layer for an intermediate layer from oxygen. Subsequently, a high-pressure mercury lamp was used at an illuminance of 80mW/cm2The dose of irradiation was 200mJ/cm2Under the conditions of (1), ultraviolet irradiation was performed, and then a metal halide lamp was used at an illuminance of 330mW/cm2The dose of irradiation was 1260mJ/cm2The composition layer for an intermediate layer was cured by ultraviolet irradiation under the conditions of (1) to obtain an intermediate layer having a thickness of 400 μm. The intermediate layers were laminated to prepare a measurement sample having a thickness of about 0.8 mm. The residual stress was measured by using a rheometer MCR302 manufactured by Anton Paar. The measurement conditions were as follows. The sample was held between parallel plates from above and below, and a shear stress was applied to the sample for a predetermined time under conditions of a measurement temperature of 65 ℃, a pitch of 1mm, and a strain of 100%. The shear stress value of the intermediate layer after the relaxation time of 300 seconds was taken as the residual stress value.
(shear storage modulus and loss tangent of intermediate layer)
In the same manner as the residual stress measurement sample, a sample for measuring the shear storage modulus and the loss tangent was prepared. The shear storage modulus (G') and the loss tangent (tan. delta.) were measured by using a rheometer MCR302 manufactured by Anton Paar. The measurement conditions were as follows. A sample is sandwiched between parallel plates from above and below, and a shear stress is applied to the sample at a measurement temperature of 0 to 100 ℃, a pitch of 1mm, a strain of 0.05 to 0.5% and an angular frequency of 1Hz, and the shear storage modulus (G') and the loss tangent (tan. delta.) at 65 ℃ are calculated from these values.
(evaluation of wafer warpage)
The protective sheets for semiconductor processing produced in examples and comparative examples were attached to a silicon wafer at 65 ℃, and the surface opposite to the surface to which the protective sheet for semiconductor processing was attached was polished until the thickness of the silicon wafer became 100 μm. The protective sheet for semiconductor processing was placed on a flat plate with its adhesion surface (silicon wafer surface) facing upward, and the maximum distance between the back surface of the silicon wafer and the flat plate was measured to evaluate the warpage of the silicon wafer. In this example, a sample with a warp of 5.0mm or less was judged to be good, and a sample with a warp of more than 5.0mm was judged to be bad.
(gel fraction)
The intermediate layer having a thickness of 400 μm, which was produced in the same manner as in each example or comparative example, was cut into a size of 20mm × 30mm, the intermediate layer was wrapped in a nylon net (mesh size 200) of 100mm × 150mm, the masses of the intermediate layer and the nylon net were weighed with a precision balance, and the mass of the nylon net measured in advance was subtracted from the weighed mass to obtain the mass of the intermediate layer itself. The mass at this time was set to M1.
Subsequently, the intermediate layer wrapped in the nylon net was immersed in 100mL of 25 ℃ ethyl acetate for 24 hours. Then, the intermediate layer was taken out, dried at 120 ℃ for 1 hour, and then left to stand at 23 ℃ and a relative humidity of 50% for 1 hour to adjust the humidity. The masses of the intermediate layer and the nylon mesh after the measurement were weighed by a precision balance, and the mass of the nylon mesh measured in advance was subtracted from the weighed mass to obtain the mass of the intermediate layer itself. The mass at this time was set to M2. Gel fraction (%) is expressed as (M2/M1). times.100.
(example 1)
A composition for an intermediate layer was obtained by blending 100 parts by mass of a total of 65 parts by mass of a urethane acrylate oligomer (CN9021 NS, manufactured by Arkema group), 25 parts by mass of isobornyl acrylate, and 10 parts by mass of dodecyl acrylate with 3.4 parts by mass of a photopolymerization initiator (Irgacure 1173, manufactured by basf) and 1.2 parts by mass of a chain transfer agent (Karenz MT PE1, manufactured by Showa Denko k.k.k.) to obtain a composition for an intermediate layer.
The obtained composition for an intermediate layer was coated on a PET film (75 μm thick, manufactured by INC.) as a base material to a thickness of 400 μm by a doctor blade method to form a composition layer for an intermediate layer, and immediately after coating, a high pressure mercury lamp was used at an illuminance of 80mW/cm2The dose of irradiation was 200mJ/cm2The composition layer for an intermediate layer is irradiated with ultraviolet rays under the conditions of (1). Next, the composition layer for an intermediate layer was laminated with a PET-based release film (SP-PET 752150 manufactured by Lintec Corporation, thickness 75 μm) to isolate the composition layer for an intermediate layer from oxygen, and then a metal halide lamp was used at an illuminance of 330mW/cm2The dose of irradiation was 1260mJ/cm2The intermediate layer composition layer was cured by ultraviolet irradiation under the conditions of (1) to form an intermediate layer having a thickness of 400 μm on a PET film as a substrate.
Further, the tensile storage modulus of the PET film as the substrate was 4.0X 109N/m2. Thus, the product of the tensile storage modulus of the substrate and the thickness (75 μm) of the substrate was 3.0X 105(N/m)。
Subsequently, 1.1 parts by mass of trimethylolpropane adduct of toluene diisocyanate (manufactured by TOSOH CORPORATION) as a crosslinking agent and 2.2 parts by mass of 2, 2-dimethoxy-2-phenylacetophenone (manufactured by basf CORPORATION, Irgacure 651) as a photopolymerization initiator were added to 100 parts by mass of an acrylic copolymer (manufactured by Nippon Synthetic Chemical Industry co., ltd., composition: 2EHA/EA/MMA// HEA-MOI%: 60/15/5/20// 60%, Mw 800,000), and toluene was further added thereto to adjust the solid content concentration to 30%, followed by stirring for 30 minutes to prepare an adhesive composition.
Then, the prepared solution of the adhesive composition was coated on a PET-based release film (manufactured by Lintec Corporation, SP-PET382150, thickness 38 μm), and dried to form an adhesive layer having a thickness of 10 μm, thereby producing an adhesive sheet.
The release film on the substrate having the intermediate layer obtained above was removed, and the intermediate layer was bonded to the adhesive layer of the adhesive sheet to produce a protective sheet for semiconductor processing.
(example 2)
A protective sheet for semiconductor processing was produced in the same manner as in example 1, except that the composition was used as the composition for an intermediate layer, and the composition was used as a composition for an intermediate layer, to obtain a composition in which 100 parts by mass of the total of 65 parts by mass of urethane acrylate oligomer (CN9021 NS, manufactured by Arkema group), 25 parts by mass of isobornyl acrylate, and 10 parts by mass of dodecyl acrylate were blended 3.4 parts by mass of a photopolymerization initiator (Irgacure 1173, manufactured by basf) and 1.0 part by mass of a chain transfer agent (Karenz MT PE1, manufactured by Showa Denko k.k.).
(example 3)
A protective sheet for semiconductor processing was produced in the same manner as in example 1, except that the composition was used as the composition for an intermediate layer, and the composition was used as a composition for an intermediate layer, to obtain a composition in which 100 parts by mass of the total of 65 parts by mass of urethane acrylate oligomer (CN9021 NS, manufactured by Arkema group), 25 parts by mass of isobornyl acrylate, and 10 parts by mass of dodecyl acrylate were blended 3.4 parts by mass of a photopolymerization initiator (Irgacure 1173, manufactured by basf) and 0.5 part by mass of a chain transfer agent (Karenz MT PE1, manufactured by Showa Denko k.
(example 4)
A protective sheet for semiconductor processing was produced in the same manner as in example 1, except that the composition was used as the composition for an intermediate layer, and the composition was used as a composition for an intermediate layer, to obtain a composition in which 100 parts by mass of the total of 65 parts by mass of urethane acrylate oligomer (CN9021 NS, manufactured by Arkema group), 25 parts by mass of isobornyl acrylate, and 10 parts by mass of dodecyl acrylate were blended 3.4 parts by mass of a photopolymerization initiator (Irgacure 1173, manufactured by basf) and 0.7 part by mass of a chain transfer agent (manufactured by Karenz MT BD1, manufactured by Showa Denko k.
Comparative example 1
A protective sheet for semiconductor processing was produced in the same manner as in example 1, except that the composition was used as the composition for an intermediate layer, and that 3.4 parts by mass of a photopolymerization initiator (Irgacure 1173, manufactured by basf) was added to 100 parts by mass of the total of 65 parts by mass of urethane acrylate oligomer (CN9021 NS, manufactured by Arkema group), 25 parts by mass of isobornyl acrylate, and 10 parts by mass of dodecyl acrylate to obtain a composition.
Comparative example 2
A protective sheet for semiconductor processing was produced in the same manner as in example 1, except that the composition was used as the composition for an intermediate layer, and the composition was used as a composition for an intermediate layer, to obtain a composition in which 100 parts by mass of the total of 65 parts by mass of urethane acrylate oligomer (CN9021 NS, manufactured by Arkema group), 25 parts by mass of isobornyl acrylate, and 10 parts by mass of dodecyl acrylate were blended 3.4 parts by mass of a photopolymerization initiator (Irgacure 1173, manufactured by basf) and 0.5 part by mass of a chain transfer agent (Karenz MT BD1, manufactured by Showa Denko k.k.).
The obtained samples (examples 1 to 4 and comparative examples 1 and 2) were subjected to the above-described measurement and evaluation. The results are shown in Table 1.
[ Table 1]
It was confirmed from table 1 that when the residual stress of the intermediate layer after holding at 65 ℃ for 300 seconds is within the above range, the wafer warpage can be suppressed.
Description of the reference numerals
1: a protective sheet for semiconductor processing; 10: a substrate; 20: an intermediate layer; 30: an adhesive layer.
Claims (5)
1. A protective sheet for semiconductor processing comprising a base material, an intermediate layer on the base material, and an adhesive layer in this order,
the residual stress of the intermediate layer after being held at 65 ℃ for 300 seconds is 300Pa or less.
2. The protective sheet for semiconductor processing according to claim 1, wherein the tensile storage modulus of the base material and the thickness of the base materialProduct of (2) is 3.5 × 104N/m or more.
3. The protective sheet for semiconductor processing according to claim 1 or 2, wherein the shear storage modulus of the intermediate layer at 65 ℃ is 25000Pa or less.
4. The protective sheet for semiconductor processing according to any one of claims 1 to 3, wherein the loss tangent of the intermediate layer at 65 ℃ is 1.0 or more.
5. A method for manufacturing a semiconductor device, comprising:
a step of attaching the protective sheet for semiconductor processing according to any one of claims 1 to 4 to a semiconductor wafer; and
and a step of reducing the rigidity of the semiconductor wafer to which the protective sheet for semiconductor processing is attached.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019068690 | 2019-03-29 | ||
| JP2019-068690 | 2019-03-29 | ||
| PCT/JP2020/012872 WO2020203437A1 (en) | 2019-03-29 | 2020-03-24 | Protection sheet for semiconductor processing and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113453893A true CN113453893A (en) | 2021-09-28 |
Family
ID=72668861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080015285.XA Pending CN113453893A (en) | 2019-03-29 | 2020-03-24 | Protective sheet for semiconductor processing and method for manufacturing semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7555907B2 (en) |
| KR (1) | KR20210149688A (en) |
| CN (1) | CN113453893A (en) |
| TW (1) | TW202044388A (en) |
| WO (1) | WO2020203437A1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112023000741T5 (en) * | 2022-03-28 | 2024-11-21 | Lintec Corporation | machining process for a workpiece |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003129011A (en) * | 2001-10-26 | 2003-05-08 | Lintec Corp | Adhesive sheet for working semiconductor wafer |
| KR20040030240A (en) * | 2002-07-26 | 2004-04-09 | 닛토덴코 가부시키가이샤 | Adhesive sheet and method for making the sheet, method for using the sheet, and multilayer sheet used in the adhesive sheet and method for making the same |
| JP2005244206A (en) * | 2004-01-28 | 2005-09-08 | Mitsui Chemicals Inc | Protecting method of semiconductor wafer and semiconductor wafer protective adhesive film |
| JP2006128292A (en) * | 2004-10-27 | 2006-05-18 | Nitto Denko Corp | Protective sheet for processing semiconductor wafer and polishing method of rear surface of semiconductor wafer |
| CN101859692A (en) * | 2009-04-02 | 2010-10-13 | 日东电工株式会社 | Pressure-sensitive adhesive sheet for semiconductor wafer protection and method of attaching thereof |
| CN102754200A (en) * | 2009-12-22 | 2012-10-24 | 古河电气工业株式会社 | Adhesive tape for protecting surface of semiconductor wafer |
| JP2014011273A (en) * | 2012-06-28 | 2014-01-20 | Furukawa Electric Co Ltd:The | Adhesive tape for wafer processing |
| WO2017150676A1 (en) * | 2016-03-03 | 2017-09-08 | リンテック株式会社 | Adhesive tape for semiconductor processing and method for producing semiconductor device |
| CN107207920A (en) * | 2015-01-30 | 2017-09-26 | 琳得科株式会社 | Semiconductor machining bonding sheet |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5117629B2 (en) * | 1970-11-25 | 1976-06-03 | ||
| JP4493296B2 (en) | 2002-07-26 | 2010-06-30 | 日東電工株式会社 | Processing adhesive sheet and its manufacturing method |
| JP2007070432A (en) * | 2005-09-06 | 2007-03-22 | Nitto Denko Corp | Pressure-sensitive adhesive sheet and method of processing product using the pressure-sensitive adhesive sheet |
| JP5255525B2 (en) | 2009-06-15 | 2013-08-07 | 古河電気工業株式会社 | Adhesive tape for semiconductor wafer processing and manufacturing method thereof |
| JP2015084352A (en) * | 2013-10-25 | 2015-04-30 | 東レ株式会社 | Multilayered sheet for gluing circuit member, and method for manufacturing semiconductor device |
| CN106794684B (en) | 2014-10-20 | 2020-09-01 | 琳得科株式会社 | Surface protection sheet substrate and surface protection sheet |
-
2020
- 2020-03-24 KR KR1020217025503A patent/KR20210149688A/en active Pending
- 2020-03-24 WO PCT/JP2020/012872 patent/WO2020203437A1/en active Application Filing
- 2020-03-24 CN CN202080015285.XA patent/CN113453893A/en active Pending
- 2020-03-24 JP JP2021511489A patent/JP7555907B2/en active Active
- 2020-03-27 TW TW109110484A patent/TW202044388A/en unknown
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003129011A (en) * | 2001-10-26 | 2003-05-08 | Lintec Corp | Adhesive sheet for working semiconductor wafer |
| KR20040030240A (en) * | 2002-07-26 | 2004-04-09 | 닛토덴코 가부시키가이샤 | Adhesive sheet and method for making the sheet, method for using the sheet, and multilayer sheet used in the adhesive sheet and method for making the same |
| JP2005244206A (en) * | 2004-01-28 | 2005-09-08 | Mitsui Chemicals Inc | Protecting method of semiconductor wafer and semiconductor wafer protective adhesive film |
| JP2006128292A (en) * | 2004-10-27 | 2006-05-18 | Nitto Denko Corp | Protective sheet for processing semiconductor wafer and polishing method of rear surface of semiconductor wafer |
| CN101859692A (en) * | 2009-04-02 | 2010-10-13 | 日东电工株式会社 | Pressure-sensitive adhesive sheet for semiconductor wafer protection and method of attaching thereof |
| CN102754200A (en) * | 2009-12-22 | 2012-10-24 | 古河电气工业株式会社 | Adhesive tape for protecting surface of semiconductor wafer |
| JP2014011273A (en) * | 2012-06-28 | 2014-01-20 | Furukawa Electric Co Ltd:The | Adhesive tape for wafer processing |
| CN107207920A (en) * | 2015-01-30 | 2017-09-26 | 琳得科株式会社 | Semiconductor machining bonding sheet |
| WO2017150676A1 (en) * | 2016-03-03 | 2017-09-08 | リンテック株式会社 | Adhesive tape for semiconductor processing and method for producing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7555907B2 (en) | 2024-09-25 |
| JPWO2020203437A1 (en) | 2020-10-08 |
| KR20210149688A (en) | 2021-12-09 |
| TW202044388A (en) | 2020-12-01 |
| WO2020203437A1 (en) | 2020-10-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108307635B (en) | Adhesive tape for processing workpiece | |
| US11322385B2 (en) | Adhesive tape for semiconductor processing, and semiconductor device manufacturing method | |
| KR102365799B1 (en) | Adhesive tape for semiconductor processing, and method for manufacturing a semiconductor device | |
| CN108377659B (en) | Adhesive tape for semiconductor processing and method for manufacturing semiconductor device | |
| WO2012128311A1 (en) | Base film and pressure-sensitive adhesive sheet provided therewith | |
| CN109312199B (en) | Adhesive sheet for semiconductor processing | |
| WO2012128312A1 (en) | Base film and pressure-sensitive adhesive sheet provided therewith | |
| KR20210023871A (en) | Adhesive tape for semiconductor processing and manufacturing method of semiconductor device | |
| KR20170121146A (en) | Dicing sheet and method for manufacturing semiconductor chip | |
| JPWO2019181730A1 (en) | Manufacturing method of adhesive tape and semiconductor device | |
| KR20190084972A (en) | Pressure sensitive adhesive sheet for semiconductor processing | |
| JP7555907B2 (en) | Protective sheet for semiconductor processing and method for manufacturing semiconductor device | |
| TWI822670B (en) | Base material for back grinding tape | |
| JP7555908B2 (en) | Protective sheet for semiconductor processing and method for manufacturing semiconductor device | |
| JP2023071427A (en) | Protection sheet for semiconductor processing and method for manufacturing semiconductor device | |
| WO2023188272A1 (en) | Adhesive tape for semiconductor processing | |
| KR20230134093A (en) | Protective sheet for workpiece processing and manufacturing method of divided workpiece | |
| WO2023189168A1 (en) | Workpiece processing method | |
| JP2023118530A (en) | Protection sheet for workpiece processing and method for manufacturing singulated workpiece |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |