CN113451490B - Bonding method, display back plate and display back plate manufacturing system - Google Patents
Bonding method, display back plate and display back plate manufacturing system Download PDFInfo
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- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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Abstract
本发明公开了一种键合方法、显示背板及显示背板制造系统，其包括：提供一基板，在所述基板上形成多个第一金属凸块；提供一转移装置，所述转移装置将多个所述第一金属凸块转移至TFT基板，以在所述TFT基板上形成多对金属垫，其中，每对所述金属垫包括两个所述第一金属凸块；提供多个LED倒装芯片，用所述转移装置将所述多个LED倒装芯片转移至所述TFT基板上，以使每个所述LED倒装芯片的电极分别与一对所述金属垫键合。由此可知，本发明的工艺过程更简单，在可靠度高的情况下实现了LED倒装芯片与TFT基板的有效键合。
The invention discloses a bonding method, a display backplane and a display backplane manufacturing system, which include: providing a substrate on which a plurality of first metal bumps are formed; and providing a transfer device, the transfer device transferring a plurality of the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of the metal pads includes two of the first metal bumps; providing a plurality of LED flip-chips, the plurality of LED flip-chips are transferred onto the TFT substrate by the transfer device, so that the electrodes of each LED flip-chip are respectively bonded to a pair of the metal pads. It can be seen from this that the process of the present invention is simpler, and effective bonding of the LED flip chip and the TFT substrate is achieved under the condition of high reliability.
Description
Technical Field
The invention relates to the technical field of Micro LEDs, in particular to a bonding method, a display back plate and a display back plate manufacturing system.
Background
Compared with other existing display technologies (LCD, PDP, OLED and the like), the Micro LED technology has the advantages of high brightness, high contrast, wide color gamut, large viewing angle, low power consumption, long service life, ultrathin flexible display and the like, and is a final technology for future display. Because the Micro LED flip chip has small size (less than 100 mu m) and large quantity, the huge transfer technology of the LED flip chip is the main bottleneck of the current Micro LED technology, different from the traditional large-size LED and Mini LED, the bonding mode of tinning, die bonding and reflow soldering can be adopted, the Micro LED can only adopt the bonding mode of metal eutectic (the open limit of tinned steel mesh is not supported), namely, metal with certain thickness is respectively plated on the substrate Pad and the LED flip chip Pad, and the interface is melted to form eutectic alloy to complete mechanical and electrical interconnection In the huge transfer bonding process, and the eutectic alloy with low melting point such as Au-In is mainly used at present.
On the other hand, compared with the PCB substrate, the Micro LED display using the TFT substrate as the carrier has the advantages of being ultra-thin, transparent, low in cost, convenient for implementing active driving, etc. and is more and more favored by various manufacturers, however, because of the limitation of equipment and process, the Pad of the existing TFT substrate factory can only be made of materials such as Al (aluminum), Ti (titanium), Mo (molybdenum), Ni (nickel), Cu (copper), ITO (indium tin oxide), etc., which cannot achieve effective bonding with the LED Pad, even if Au-In eutectic bonding is used, a UBM (under Bump Metal) stack is required, but the fabrication of UBM requires cutting a large-sized substrate into a small size (limitation of UBM evaporation equipment), then, a plurality of layers of metal (Ti, Ni, etc.) are evaporated on the substrate Pad to form a UBM stack structure, and then a bonding metal (such as In) is evaporated on the UBM stack structure to form a Bump shape, this significantly increases process complexity while also being limited by the supportable size of the UBM apparatus.
Thus, there is a need for improvements and enhancements in the art.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a bonding method, a display backplane and a display backplane manufacturing system, aiming at the defects of the prior art, so as to solve the problem that the prior substrate material cannot directly support the bonding of the LED flip chip, and also avoid the process complexity problem that the TFT substrate is cut into small sizes to be used as the UBM structure.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
in a first aspect, the present application provides a bonding method comprising: providing a substrate, and forming a plurality of first metal bumps on the substrate; providing a transfer device, wherein the transfer device transfers the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of metal pads comprises two first metal bumps; and providing a plurality of LED flip chips, and transferring the LED flip chips onto the TFT substrate by using the transfer device so that the electrodes of each LED flip chip are respectively bonded with a pair of the metal pads.
Optionally, the method further comprises: providing a first electrical detection device, wherein the first electrical detection device is used for electrically detecting each LED flip chip on the TFT substrate to obtain a detection result; determining whether each LED flip chip on the TFT substrate is bonded with each pair of metal pads according to the electrical detection result; and if any one LED flip chip is not bonded with the metal pad contacted with the LED flip chip, repairing the LED flip chip.
Optionally, the forming a plurality of first metal bumps on the substrate includes: coating a release adhesive on the substrate; sequentially evaporating a first metal layer, a second metal layer and a third metal layer on the release glue to form a metal cushion layer; and patterning the metal pad layer to form a plurality of first metal bumps.
Optionally, before the flip-chip transferring the plurality of LEDs onto the TFT substrate with the transfer device, the method further comprises: a second metal bump is formed on the electrode of each LED flip chip through evaporation, and a new LED flip chip is formed; the flip-chip transferring the plurality of LEDs onto the TFT substrate by the transferring device so that the electrodes of each of the LED flip-chips are respectively bonded with a pair of the metal pads comprises: transferring the plurality of new LED flip chips onto the TFT substrate by using the transfer device, so that the two second metal bumps on each new LED flip chip form eutectic bonding with the third metal layer in the two first metal bumps in the pair of metal pads respectively.
In a second aspect, the present application also provides a display backplane comprising: a plurality of first metal bumps; the first metal bumps are transferred to the TFT substrate and are in eutectic bonding with the metal cushion blocks on the TFT substrate; a plurality of LED flip chips transferred onto the TFT substrate, the plurality of LED flip chips being eutectic bonded with the plurality of first metal bumps on the TFT substrate, respectively.
Optionally, the first metal bump includes a first metal layer, a second metal layer, and a third metal layer; the first metal layer and the metal cushion block are in eutectic bonding, the second metal layer is arranged on the first metal layer, and the third metal layer is arranged on the second metal layer.
Optionally, the LED flip chip comprises a light emitting diode and two second metal bumps; one ends of the two second metal bumps are respectively bound on the two electrodes of the light-emitting diode; and the other ends of the two second metal bumps are in eutectic bonding with the two third metal layers.
In a third aspect, the present application also provides a display backplane manufacturing system, comprising: a substrate including a plurality of first metal bumps; the TFT substrate is provided with a plurality of metal cushion blocks; a plurality of LED flip chips; the transfer device is used for transferring the first metal bumps to the TFT substrate so as to enable the first metal bumps to be in eutectic bonding with the metal cushion blocks on the TFT substrate; and the transfer device is also used for transferring the LED flip chips to the TFT substrate so as to enable the LED flip chips to be in eutectic bonding with the first metal bumps on the TFT substrate respectively.
Optionally, the display backplane manufacturing system further comprises: and the first electrical property detection device is used for electrically detecting each LED flip chip on the TFT substrate.
Optionally, the display backplane manufacturing system further includes: and the second electrical detection device is used for detecting whether the metal cushion block on the TFT substrate is bonded with the first metal bump or not.
Has the advantages that: compared with the prior art, the invention provides a bonding method, a display backboard and a display backboard manufacturing system, which comprise the following steps: providing a substrate, and forming a plurality of first metal bumps on the substrate; providing a transfer device, wherein the transfer device transfers the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of metal pads comprises two first metal bumps; and providing a plurality of LED flip chips, and transferring the LED flip chips onto the TFT substrate by using the transfer device so that the electrodes of each LED flip chip are respectively bonded with a pair of the metal pads. Therefore, the process is simpler, and the LED flip chip and the TFT substrate are effectively bonded under the condition of high reliability.
Drawings
Fig. 1 is a flow chart of a bonding method provided by the present invention.
Fig. 2 is a schematic diagram of one bonding process provided by the present invention.
Fig. 3 is a schematic diagram of one bonding process provided by the present invention.
Fig. 4 is a schematic diagram of one bonding process provided by the present invention.
Fig. 5 is a schematic diagram of one of the bonding processes provided by the present invention.
Fig. 6 is a schematic structural diagram of a second electrical property detection device provided in the present invention.
Detailed Description
The invention provides a bonding method, a display back plate and a display back plate manufacturing system, and in order to make the purpose, technical scheme and effect of the invention clearer and clearer, the invention is further described in detail below by referring to the attached drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As used herein, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. Further, "connected" or "coupled" as used herein may include wirelessly connected or wirelessly coupled. As used herein, the term "and/or" includes all or any element and all combinations of one or more of the associated listed items.
It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
The invention will be further explained by the description of the embodiments with reference to the drawings.
The present embodiment provides a bonding method, as shown in fig. 1, the method includes:
s100, providing a substrate 1, and forming a plurality of first metal bumps 2 on the substrate 1.
Specifically, as shown in fig. 2, 3, 4, 5 and 6, the substrate 1 includes a plurality of first metal bumps 2; the first metal bump 2 comprises a first metal layer 21, a second metal layer 22 and a third metal layer 23, wherein the first metal layer 21 is in eutectic bonding with a metal pad 6 on the TFT substrate 5, the second metal layer 22 is arranged on the first metal layer 21, and the third metal layer 23 is arranged on the second metal layer 22.
In this embodiment, forming a plurality of first metal bumps 2 on the substrate 1 includes:
s101, coating release glue 3 on the substrate 1;
s102, sequentially evaporating a first metal layer 21, a second metal layer 22 and a third metal layer 23 on the release glue 3 to form a metal cushion layer;
s103, patterning the metal cushion layer to form a plurality of first metal bumps 2.
In this embodiment, the manufacturing process of the first metal bump 2 is that three layers of metals including a first metal layer 21, a second metal layer 22, and a third metal layer 23 are sequentially disposed on the substrate 1 with the release liner 3 by using a yellow light process of an existing LED factory, where the first metal layer 21 mainly functions to realize bonding between the first metal bump 2 and the metal pad 6 on the TFT substrate 5, and the corresponding metal is selected according to different metal types of the metal pad 6, and if the metal type corresponding to the metal pad 6 is Cu (copper), the first metal layer 21 may be Sn (tin); the main function of the second metal layer 22 is to realize the connection and diffusion barrier of the first metal layer 21 and the third metal layer 23, and thus the second metal layer 22 may be Ti (titanium); the third metal layer 23 mainly functions to bond the first metal bump 2 with the metal pad 6, and form eutectic bonding with the second metal bump 92 formed by evaporation on the electrode 91 of the LED flip-chip 9, which may be different metals according to the metal type of the second metal bump 92, for example, the second metal bump 92 is In (indium), and the third metal layer 23 may be Au (gold).
In this embodiment, after the three layers of metal are plated, a photoresist is coated, the photoresist is patterned after a first exposure and development, the portion covered by the photoresist is the portion to be left, and the portion not covered by the photoresist is the portion not required, the metal layer not covered by the photoresist is removed by wet etching, the remaining photoresist is stripped to obtain the first metal bump 2 having the same size as the metal pad 6, and the release property of the release glue 3 is utilized to transfer the first metal layer 21 to the upper side of the substrate 1 for macro-rotation. Optionally, the release glue 3 may be a pyrolytic glue or a photolytic glue, or other glue material with a peeling function, such as a photolytic glue, and the release glue is irradiated by light with a certain wavelength to lose its viscosity, so as to release the metal bump. In addition, an insulating protective layer 7 is provided on the TFT substrate.
S200, providing a transfer device 4, wherein the transfer device 4 transfers the plurality of first metal bumps 2 to a TFT substrate 5 to form a plurality of pairs of metal pads on the TFT substrate 5, wherein each pair of metal pads includes two first metal bumps 2.
Specifically, as shown in fig. 3, the transfer device 4 is configured to transfer the plurality of first metal bumps 2 onto the TFT substrate 5, so that the plurality of first metal bumps 2 are eutectic-bonded with the metal pads 6 on the TFT substrate 5, where the TFT substrate 5 is provided with the plurality of metal pads 6.
Further, in an implementation manner of this embodiment, the method further includes:
m01, providing a second electrical property detection device 8, wherein the second electrical property detection device 8 is used for detecting whether the metal pad 6 on the TFT substrate 5 is bonded to the first metal bump 2.
Specifically, in order to avoid the occurrence of poor bonding between the metal pad 6 and the first metal bump 2, the second electrical detection device 8 is used to detect whether the metal pad 6 on the TFT substrate 5 and the first metal bump 2 are successfully bonded, and if bonding failure occurs, the first metal bump 2 is transferred again after maintenance.
S300, providing a plurality of LED flip chips 9, and transferring the plurality of LED flip chips 9 onto the TFT substrate 5 by using the transferring device 4, so that the electrodes 91 of each LED flip chip 9 are respectively bonded to a pair of the metal pads.
Specifically, as shown in fig. 5, the LED flip chip 9 includes a light emitting diode and two second metal bumps 92; one end of each of the two second metal bumps 92 is respectively bonded to two electrodes 91 of the light emitting diode; the other ends of the two second metal bumps 92 are eutectic-bonded with the two third metal layers 23. The plurality of LED flip chips 9 are transferred onto the TFT substrate 5, the plurality of LED flip chips 9 are eutectic-bonded with the plurality of first metal bumps 2 on the TFT substrate 5, respectively, and therefore the transfer device 4 is further configured to transfer the plurality of LED flip chips 9 onto the TFT substrate 5, so that the plurality of LED flip chips 9 are eutectic-bonded with the plurality of first metal bumps 2 on the TFT substrate 5, respectively.
Further, before the transferring the plurality of LED flip-chips 9 onto the TFT substrate 5 by the transferring device 4, the method further includes:
and S10, forming a second metal bump 92 on the electrode 91 of each LED flip chip 9 by evaporation to form a new LED flip chip.
Specifically, the second metal bump 92 is composed of a fourth metal layer (for example, In) that is evaporated by evaporation onto the electrode 91 on the LED flip-chip 9 to form the second metal bump 92. Correspondingly, the transferring device 4 is used for transferring the plurality of LED flip chips 9 onto the TFT substrate 5, so that the electrodes 91 of each LED flip chip 9 are respectively bonded with a pair of the metal pads, and the transferring device includes: transferring the plurality of new LED flip-chips 9 onto the TFT substrate 5 by using the transfer device 4, so that the two second metal bumps 92 on each new LED flip-chip 5 form eutectic bonds with the third metal layers 23 in the two first metal bumps 2 of the pair of metal pads, respectively.
Specifically, the present invention utilizes the transfer device 4 to transfer the LED flip chip 9 to the TFT substrate 5, In this embodiment, during the transfer process, the TFT substrate 5 is placed on a heatable stage, the heating temperature reaches the melting temperature of the eutectic alloy used, the transfer device 4 picks up a new LED flip chip 9 and places the new LED flip chip 9 on the TFT substrate 5, and simultaneously applies a certain pressure, and under the action of the temperature and the pressure, the two second metal bumps 92 on the LED flip chip 9 form eutectic bonding (Au-In) with the third metal layers 23 In the two first metal bumps 2 In the pair of metal pads, respectively. Since the temperature of this eutectic bonding is lower than the bonding temperature of the first (Cu — Sn), the first bonding point is not affected. Therefore, the melting point of the second metal bump 92 and the electrode 91 is lower than the melting point of the first metal layer 21 and the metal pad 6. Preferably, the temperature range is 150-200 ℃.
Further, in an implementation manner of this embodiment, the method further includes:
s01, providing a first electrical property detection device 11, wherein the first electrical property detection device 11 performs electrical property detection on each LED flip chip 9 on the TFT substrate 5 to obtain a detection result;
s02, determining whether each LED flip chip 9 on the TFT substrate 5 is bonded with each pair of metal pads according to the electrical detection result;
s03, if any one of the LED flip chips 9 is not bonded to the metal pad in contact with the LED flip chip 9, repairing the LED flip chip 9.
Specifically, the present invention further provides a first electrical detection device 11, which can electrically detect each of the LED flip chips 9 on the TFT substrate 5. This is because the bonding of the LED flip chip 9 on the TFT substrate 5 to the corresponding metal pad may be poor, such as non-conduction, so as to perform bonding again after maintenance.
Based on the above bonding method, the present invention further provides a display backplane 10, as shown in fig. 5, which includes: a plurality of first metal bumps 2; the first metal bumps 2 are transferred onto the TFT substrate 5 and are in eutectic bonding with metal cushion blocks 6 on the TFT substrate 5; a plurality of LED flip-chips 9, the plurality of LED flip-chips 9 are transferred onto the TFT substrate 5, the plurality of LED flip-chips 9 are respectively eutectic bonded with the plurality of first metal bumps 2 on the TFT substrate 5.
Further, the first metal bump 2 includes a first metal layer 21, a second metal layer 22, and a third metal layer 23; the first metal layer 21 and the metal pad 6 are eutectic bonded, the second metal layer 22 is disposed on the first metal layer 21, and the third metal layer 23 is disposed on the second metal layer 22.
Further, the LED flip chip 9 includes a light emitting diode and two second metal bumps 92; one end of each of the two second metal bumps 92 is respectively bonded to two electrodes 91 of the light emitting diode; the other ends of the two second metal bumps 92 are eutectic-bonded with the two third metal layers 23.
Based on the bonding method, the invention also provides a display backboard manufacturing system, which comprises the following steps: a substrate 1, the substrate 1 comprising a plurality of first metal bumps 2;
the TFT substrate 5 is provided with a plurality of metal cushion blocks 6;
a plurality of LED flip chips 9; and
the transfer device 4 is used for transferring the plurality of first metal bumps 2 onto the TFT substrate 5, so that the plurality of first metal bumps 2 are in eutectic bonding with the metal cushion blocks 6 on the TFT substrate 5; and
the transfer device 4 is further configured to transfer the plurality of LED flip chips 9 onto the TFT substrate 5, so that the plurality of LED flip chips 9 are eutectic-bonded with the plurality of first metal bumps 2 on the TFT substrate 5, respectively.
In this embodiment, the display backplane manufacturing system further includes: and the first electrical property detection device is used for electrically detecting each LED flip chip 9 on the TFT substrate 5.
In this embodiment, as shown in fig. 4, the display backplane manufacturing system further includes: and the second electrical property detection device 8 is used for detecting whether the metal cushion block 6 on the TFT substrate 5 is bonded with the first metal bump 2 or not by the second electrical property detection device 8. It should be noted that the first electrical property detection device and the second electrical property detection device 8 may be the same or not, and the present invention is not limited thereto.
To sum up, the invention discloses a bonding method, a display backplane and a display backplane manufacturing system, which includes: providing a substrate 1, and forming a plurality of first metal bumps 2 on the substrate 1; providing a transfer device 4, wherein the transfer device 4 transfers a plurality of the first metal bumps 2 to a TFT substrate 5 to form a plurality of pairs of metal pads on the TFT substrate 5, wherein each pair of the metal pads comprises two of the first metal bumps 2; providing a plurality of LED flip chips 9, and transferring the plurality of LED flip chips 9 onto the TFT substrate 5 by using the transfer device 4, so that the electrodes 91 of each LED flip chip 9 are respectively bonded with a pair of the metal pads. Therefore, the process of the invention is simpler, and the LED flip chip 9 and the TFT substrate 5 are effectively bonded under the condition of high reliability. In addition, the invention overcomes the problem that the existing Pad material in a panel factory cannot directly support LED bonding, and also avoids the process complexity of cutting a TFT substrate into small sizes to manufacture UBM structures.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (10)
1. A bonding method, characterized in that it comprises:
providing a substrate, and forming a plurality of first metal bumps on the substrate;
providing a transfer device, wherein the transfer device transfers the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of metal pads comprises two first metal bumps;
and providing a plurality of LED flip chips, and transferring the LED flip chips onto the TFT substrate by using the transfer device so that the electrodes of each LED flip chip are respectively bonded with a pair of the metal pads.
2. The bonding method of claim 1, further comprising:
providing a first electrical detection device, wherein the first electrical detection device is used for electrically detecting each LED flip chip on the TFT substrate to obtain a detection result;
determining whether each LED flip chip on the TFT substrate is bonded with each pair of metal pads according to the electrical detection result;
and if any one LED flip chip is not bonded with the metal pad contacted with the LED flip chip, repairing the LED flip chip.
3. The bonding method according to claim 1 or 2, wherein the forming a plurality of first metal bumps on the substrate comprises:
coating a release adhesive on the substrate;
sequentially evaporating a first metal layer, a second metal layer and a third metal layer on the release glue to form a metal cushion layer;
and patterning the metal pad layer to form a plurality of first metal bumps.
4. The bonding method of claim 3, wherein prior to said flip-chip transferring the plurality of LEDs onto the TFT substrate with the transfer device, the method further comprises:
a second metal bump is formed on the electrode of each LED flip chip through evaporation, and a new LED flip chip is formed;
the flip-chip transferring the plurality of LEDs onto the TFT substrate by the transferring device so that the electrodes of each of the LED flip-chips are respectively bonded with a pair of the metal pads comprises:
transferring the new LED flip chips onto the TFT substrate by using the transfer device, so that the two second metal bumps on each new LED flip chip form eutectic bonding with the third metal layer in the two first metal bumps in the pair of metal pads respectively.
5. A display backplane, comprising:
a plurality of first metal bumps;
the first metal bumps are transferred to the TFT substrate and are in eutectic bonding with the metal cushion blocks on the TFT substrate;
a plurality of LED flip chips transferred onto the TFT substrate, the plurality of LED flip chips being eutectic bonded with the plurality of first metal bumps on the TFT substrate, respectively.
6. The display backplane of claim 5, wherein the first metal bump comprises a first metal layer, a second metal layer, and a third metal layer;
the first metal layer and the metal cushion block are in eutectic bonding, the second metal layer is arranged on the first metal layer, and the third metal layer is arranged on the second metal layer.
7. The display backplane of claim 6, wherein the LED flip chip comprises a light emitting diode and two second metal bumps;
one ends of the two second metal bumps are respectively bound on the two electrodes of the light-emitting diode;
and the other ends of the two second metal bumps are in eutectic bonding with the two third metal layers.
8. A display backplane manufacturing system, comprising:
a substrate including a plurality of first metal bumps;
the TFT substrate is provided with a plurality of metal cushion blocks;
a plurality of LED flip chips; and
the transfer device is used for transferring the first metal bumps to the TFT substrate so as to enable the first metal bumps to be in eutectic bonding with the metal cushion blocks on the TFT substrate; and
the transfer device is further used for transferring the LED flip chips onto the TFT substrate so that the LED flip chips are in eutectic bonding with the first metal bumps on the TFT substrate respectively.
9. The display backplane manufacturing system of claim 8, further comprising:
and the first electrical property detection device is used for electrically detecting each LED flip chip on the TFT substrate.
10. The display backplane manufacturing system of claim 8 or 9, further comprising:
and the second electrical detection device is used for detecting whether the metal cushion block on the TFT substrate is bonded with the first metal bump or not.
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