CN113448084B - High-temperature heat source color modulation method - Google Patents

Abstract

The invention discloses a high-temperature heat source color modulation method, including S10, adopting the finite element difference method for self-programming, according to the color modulation of the high-temperature heat source to the target color, selecting materials that can achieve the target color modulation, and designing a one-dimensional photonic crystal ; S20, through simulation and calculation, obtain the periodic layer number and the thickness of each layer of the material in S10; S30, according to the periodic layer number and the thickness of each layer of the material in S20, use physical methods to prepare one-dimensional photons on the glass substrate crystals. S40, characterizing the prepared one-dimensional photonic crystal and detecting the color modulation effect of the high-temperature heat source. The invention can convert light generated by a high-temperature heat source into a low-temperature color through the modulation method of the invention, and has better high temperature resistance and stability.

Description

A high-temperature heat source color modulation method

technical field

The invention belongs to the technical field of optical processing, and relates to a high-temperature heat source color modulation method.

Background technique

In daily life, the vast majority of optical filters are mostly used at room temperature or low temperature, and their principles can be based on different mechanisms. However, in daily life, some applications need to be applied under high-temperature heat sources, such as fireplaces for heating, induction cooker kitchen utensils for modern kitchens, etc., and their working temperatures can be as high as thousands of degrees. Usually, these high-temperature heat sources have a layer of transparent protection on the outside. Typically, these high-temperature heat sources emit red light when viewed from outside the transparent protective device. However, according to customer survey feedback on products such as fireplaces and induction hobs, some customers want other colors, such as green light. This requires optical design and processing of transparent device materials external to the heat source. Moreover, the processed device needs to meet the characteristics of high temperature resistance and high long-term stability. At present, there are not many technologies that can meet these requirements at the same time.

Contents of the invention

In order to solve the above problems, the present invention proposes a high-temperature heat source color modulation method, comprising the following steps:

S10, using the finite element difference method for self-programming, according to the color modulation of the high-temperature heat source to the target color, select the material that can achieve the target color modulation, and design the one-dimensional photonic crystal;

S20, through simulation and calculation, obtain the periodic layer number and the thickness of each layer of the material in S10;

S30, according to the number of periodic layers of the material in S20 and the thickness of each layer, using a physical method to prepare a one-dimensional photonic crystal on the glass substrate;

S40, characterizing the prepared one-dimensional photonic crystal and detecting the color modulation effect of the high-temperature heat source.

Preferably, the S10 includes periodically overlapping films of two different dielectric materials, using the different dielectric properties of the two materials to change the light transmission characteristics, setting the dielectric properties of the two materials, the thickness of the film, and The number of layers is calculated based on Maxwell's equations to obtain the relationship between the transmittance of the photonic body and the wavelength. If the obtained results meet the preset requirements, the selected material can be determined.

Preferably, the S10 includes a periodic one-dimensional photonic crystal composed of silicon dioxide and titanium dioxide thin films.

Preferably, the number of periodic layers of silicon dioxide and titanium dioxide obtained in S20 is 8, and the thickness of each layer of silicon dioxide or titanium dioxide is 80-95 nm.

Preferably, the physical methods in S30 include magnetron sputtering, thermal evaporation and atomic layer deposition.

Preferably, said S30 specifically includes the following steps:

S31, performing ultrasonic cleaning on the glass substrate in sequence with acetone, ethanol, and deionized water;

S32, drying the cleaned substrate with nitrogen gas, sending it into the cavity, and preparing for photonic crystal preparation;

S33, depositing the first layer of titanium dioxide film with a thickness of 80-95nm;

S34, depositing a first layer of silicon dioxide film on the first layer of titanium dioxide film with a thickness of 80-95nm; the first layer of titanium dioxide film and the silicon dioxide film form a first silicon dioxide/titania cycle;

S35, and so on, prepare the second to eighth silica/titania cycles, and complete the preparation of one-dimensional silica/titania photonic crystals;

S36, performing annealing treatment.

Preferably, the ultrasonic cleaning time in S31 is 5-15 minutes.

Preferably, the annealing temperature in S36 is 250-900° C., and the annealing time is 30-60 min.

Preferably, the step S40 includes scanning electron microscope images of the cross section of the prepared one-dimensional photonic crystal and measuring the relationship between the transmittance and the wavelength of the one-dimensional photonic crystal.

The beneficial effects of the present invention at least include:

A one-dimensional photonic crystal film is used and deposited on a transparent substrate such as glass. The invention takes the conversion of red light from a high-temperature heat source into green light as an example to carry out design, preparation and effect verification. The wavelength range of red light is 620-760nm, and the wavelength range of green light is 492-580nm. From the perspective of light transmission, the projection of suppressed light in the red light response wavelength range is realized, and at the same time, the green light wavelength range has high transmittance. .

Description of drawings

Fig. 1 is a flow chart of the steps of the high-temperature heat source color modulation method according to the embodiment of the present invention;

Fig. 2 is a schematic diagram of the structure formed after S10 of the high-temperature heat source color modulation method according to the embodiment of the present invention;

3 is a graph showing the relationship between normalized transmittance and wavelength calculated after S20 of the high-temperature heat source color modulation method according to the embodiment of the present invention;

4 is an electron microscope image of a one-dimensional photonic crystal formed after S30 of the high-temperature heat source color modulation method according to an embodiment of the present invention;

Fig. 5 is a schematic diagram of the effect of the high-temperature heat source color modulation method according to the embodiment of the present invention;

FIG. 6 is a graph showing the relationship between actual transmittance and wavelength in the high temperature heat source color modulation method according to the embodiment of the present invention.

Detailed ways

In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

On the contrary, the invention covers any alternatives, modifications, equivalent methods and schemes within the spirit and scope of the invention as defined by the claims. Further, in order to make the public have a better understanding of the present invention, some specific details are described in detail in the following detailed description of the present invention. The present invention can be fully understood by those skilled in the art without the description of these detailed parts.

See Figure 1, including the following steps:

S10, using the finite element difference method for self-programming, according to the color modulation of the high-temperature heat source to the target color, select the material that can achieve the target color modulation, and design the one-dimensional photonic crystal;

S20, through simulation and calculation, obtain the periodic layer number and the thickness of each layer of the material in S10;

S30, according to the number of periodic layers of the material in S20 and the thickness of each layer, using a physical method to prepare a one-dimensional photonic crystal on the glass substrate;

S40, characterizing the prepared one-dimensional photonic crystal and detecting the color modulation effect of the high-temperature heat source.

S10 includes the periodic overlapping of films of two different dielectric materials, using the different dielectric properties of the two materials to change the light transmission characteristics, setting the dielectric properties of the two materials, the thickness of the film and the number of layers, based on Maxwell The equations are solved and calculated to obtain the relationship between the transmittance of the photonic body and the wavelength. If the obtained results meet the preset requirements, the selected material can be determined.

In a specific embodiment, S10 includes a periodic one-dimensional photonic crystal composed of thin films of silicon dioxide 11 and titanium dioxide 22 , the structure of which is shown in FIG. 2 .

The number of periodic layers of silicon dioxide 11 and titanium dioxide 22 obtained in S20 is 8, and the thickness of each layer of silicon dioxide 11 or titanium dioxide 22 is 80-95 nm. The calculated normalized transmittance versus wavelength is shown in FIG. 3 .

Physical methods in S30 include magnetron sputtering, thermal evaporation, and atomic layer deposition.

S30 specifically includes the following steps:

S31, performing ultrasonic cleaning on the glass substrate 33 in sequence with acetone, ethanol, and deionized water;

S32, drying the cleaned substrate 33 with nitrogen gas, sending it into the cavity, and preparing for photonic crystal preparation;

S33, depositing the first layer of titanium dioxide 22 film with a thickness of 80-95nm;

S34, depositing a first layer of silicon dioxide 11 thin film on the first layer of titanium dioxide 22 film with a thickness of 80-95nm; the first layer of titanium dioxide 22 thin film and silicon dioxide 11 thin film form the first silicon dioxide 11/titanium dioxide 22 cycle;

S35, and so on, prepare the second to eighth silicon dioxide 11/titanium dioxide 22 cycles, and complete the preparation of the one-dimensional silicon dioxide 11/titanium dioxide 22 photonic crystal;

S36, performing annealing treatment.

See FIG. 4 for a cross-sectional scanning electron microscope image of the obtained silicon dioxide 11/titanium dioxide 22 one-dimensional photonic crystal structure.

In a specific embodiment, the ultrasonic cleaning time in S31 is 5-15 minutes. The annealing temperature in S36 is 250-900°C, and the annealing time is 30-60min.

S40 includes scanning electron microscope images of the cross section of the prepared one-dimensional photonic crystal and measuring the relationship between transmittance and wavelength of the one-dimensional photonic crystal.

Check the effect of the one-dimensional photonic crystal, see Figure 5, 20 represents the light generated by the high-temperature heat source, and the one-dimensional high-temperature-resistant photonic crystal sheet is placed on the heat source, and the light in the middle part represented by 10 has changed from red (the light generated by the high-temperature heat source) ) was modulated into green (light produced by a low-temperature heat source), and exhibited excellent high-temperature resistance and stability, and the functions met expectations.

The relationship between the transmittance and the wavelength of the one-dimensional photonic crystal was further measured, and the results are shown in Figure 6. In the red wavelength range of 620-760nm, the transmittance is almost completely suppressed. In the green wavelength range of 495-570nm, it exhibits high transmittance.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements and improvements made within the spirit and principles of the present invention should be included in the protection of the present invention. within range.

Claims (2)

1. A high-temperature heat source color tone manufacturing method is characterized by comprising the following steps:

s10, self-programming by adopting a finite element difference method, modulating the color of a high-temperature heat source into a target color, selecting a material capable of achieving the target color modulation, and designing a one-dimensional photonic crystal;

s20, obtaining the number of periodic layers of the material and the thickness of each layer in the S10 through simulation and calculation;

s30, preparing one-dimensional photonic crystals on the glass substrate by adopting a physical method according to the number of the periodic layers of the material and the thickness of each layer in the S20;

s40, performing characterization and high-temperature heat source color modulation effect detection on the prepared one-dimensional photonic crystal;

the method comprises the steps of S10, periodically overlapping films made of two different dielectric materials, changing the transmission characteristics of light by using the different dielectric characteristics of the two materials, setting the dielectric characteristics of the two materials, the thickness and the layer number of the films, carrying out solution calculation based on Maxwell equation set to obtain the relation of the transmittance of photonics with the wavelength, and determining the selected material if the obtained result meets the preset requirement;

the S10 comprises a periodic one-dimensional photonic crystal formed by silicon dioxide and titanium dioxide films;

the number of the periodic layers of the silicon dioxide and the titanium dioxide obtained in the S20 is 8, and the thickness of each layer of the silicon dioxide or the titanium dioxide is 80-95nm;

the physical method in S30 comprises a magnetron sputtering method, a thermal evaporation method and an atomic layer deposition method;

the S30 specifically includes the following steps:

s31, carrying out ultrasonic cleaning on the glass substrate by using acetone, ethanol and deionized water respectively in sequence;

s32, drying the cleaned substrate by using nitrogen, sending the substrate into a cavity, and preparing the photonic crystal;

s33, depositing a first layer of titanium dioxide film with the thickness of 80-95nm;

s34, depositing a first layer of silicon dioxide film on the first layer of titanium dioxide film, wherein the thickness of the first layer of silicon dioxide film is 80-95nm; the first layer of titanium dioxide film and the silicon dioxide film form a first silicon dioxide/titanium dioxide period;

s35, preparing the second to eighth silicon dioxide/titanium dioxide periods in the same way to complete the preparation of the one-dimensional silicon dioxide/titanium dioxide photonic crystal;

s36, annealing treatment is carried out;

the ultrasonic cleaning time in the S31 is 5-15min;

the annealing temperature in the S36 is 250-900 ℃, and the annealing time is 30-60min.

2. A high temperature thermal source color producing method according to claim 1, wherein S40 comprises scanning electron micrographs of the cross section of the produced one-dimensional photonic crystal and measuring the transmittance of the one-dimensional photonic crystal with respect to the wavelength.

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