CN113445007A

CN113445007A - Pulsed laser deposition apparatus and method

Info

Publication number: CN113445007A
Application number: CN202110591239.0A
Authority: CN
Inventors: 冯中沛; 金魁; 袁洁; 许波; 赵忠贤
Original assignee: Songshan Lake Materials Laboratory
Current assignee: Songshan Lake Materials Laboratory
Priority date: 2021-05-28
Filing date: 2021-05-28
Publication date: 2021-09-28
Also published as: DE112022002839T5; KR20240015107A; WO2022247736A1

Abstract

Disclosed is a pulsed laser deposition apparatus including: the reaction chamber is internally provided with a supporting column for fixing the substrate table, a first heating element positioned above the substrate table and a second heating element positioned below the substrate table; the second ends of the target machines are fixedly provided with target materials, the target materials are positioned above and/or below the substrate table in the reaction cavity, and the surface of the target materials and the surface of the substrate table form an included angle; and the laser devices respectively generate laser beams, wherein the first heating element and the second heating element are respectively provided with notches, the laser beams linearly reach the surface of the target along the direction parallel to the surface of the substrate table, and plasmas formed by irradiating the surface of the target by the laser beams reach the surface of the substrate table through the notches on the first heating element and the second heating element. The pulse laser deposition device adopts the double-sided oblique symmetrical deposition process, can perform film deposition on both sides of the substrate table, and realizes large-area, large-batch and high-quality film preparation.

Description

Pulsed laser deposition apparatus and method

Technical Field

The invention relates to the technical field of thin film deposition, in particular to a pulse laser deposition device and a pulse laser deposition method.

Background

Microwave communication devices such as antennas, resonators, filters, delay lines and the like made of superconducting films have incomparably high sensitivity compared with conventional materials (such as gold, silver and the like), so that the superconducting films are regarded by the military of various countries, become key technologies in future electronic countermeasure, and are the 'future' of new-generation communication technologies. In large particle accelerators, superconducting films also show great market prospects.

Pulsed Laser Deposition (PLD) is an important technology for preparing superconducting thin films, and plasma is generated in the normal direction of a target material through the interaction between Laser and the target material, nucleates on the surface of a substrate, grows and forms a thin film.

It can be seen that the practical superconducting film has irreplaceable strategic and economic requirements, but the current China is still in gap with the international advanced level, such as the preparation of high-quality large-area YBCO double-sided film and the like, and a series of application foundations and key technical problems need to be overcome. If corresponding equipment and superconducting films purchased from foreign countries are adopted, on one hand, the price is high, and a large amount of superconducting films cannot be purchased, on the other hand, equipment of international advanced level cannot be purchased, and the existing equipment cannot realize large-scale, large-area and high-quality film preparation.

Disclosure of Invention

In view of the above problems, it is an object of the present invention to provide a pulsed laser deposition apparatus and method, which can achieve large-scale, large-area, and high-quality thin film production.

According to an aspect of the present invention, there is provided a pulsed laser deposition apparatus including: the device comprises a reaction cavity, a plurality of second windows are arranged on the cavity wall of the reaction cavity, a supporting column for fixing a substrate table, a first heating element positioned above the substrate table and a second heating element positioned below the substrate table are arranged in the reaction cavity; the target machines penetrate through the side wall of the reaction cavity, targets are fixed at the second ends of the target machines and are positioned above and/or below the substrate table in the reaction cavity, and included angles are formed between the surfaces of the targets and the surfaces of the substrate table; and the laser devices are positioned outside the reaction cavity, respectively generate laser beams, and the laser beams are incident on the surface of the target material in the reaction cavity through the second windows, wherein the first heating element and the second heating element are respectively provided with notches, the laser beams of the laser devices linearly reach the surface of the target material along a direction parallel to the surface of the substrate table, and plasma formed by irradiating the surface of the target material through the laser beams reaches the surface of the substrate table through the notches on the first heating element and the second heating element.

Optionally, the plurality of laser devices are horizontally disposed such that the laser beams are horizontally incident on the inclined surface of the target.

Optionally, the laser device comprises: a laser for generating a laser beam; the driving device is connected with the laser and drives the laser to reciprocate and vertically move; the driving device is horizontally fixed on the first support.

Optionally, the laser beam of the reciprocating laser device moves in a radial direction with respect to the center of the substrate table in a spot on the target surface.

Optionally, when the spot reaches the center or edge position of the target surface relative to the substrate table, translating the laser device in a vertical direction to move the spot of the laser beam on the target surface up or down.

Optionally, the driving device controls the moving speed of the laser device, so that the moving speed of the laser beam spot on the target surface relative to the center of the substrate table along the radial direction from the center to the edge gradually becomes slower.

Optionally, a plurality of targets are fixed to the second end of the target drone and are distributed in a polygon shape.

Optionally, the materials of the plurality of targets are the same or different.

Optionally, the target machine is rotated to replace the target material on which the laser beam is incident.

Optionally, the first surface and the second surface of the substrate table each have at least one substrate.

Optionally, the method further comprises: the second bracket is positioned below the outer part of the reaction cavity, is connected with the reaction cavity and is used for fixing the reaction cavity; the first motor is positioned above the outer part of the reaction cavity, is connected with the substrate table and is used for controlling the substrate table to rotate; the vacuum device is positioned on the outer side wall of the reaction cavity, is connected with the reaction cavity and is used for maintaining the vacuum environment in the reaction cavity; and the substrate replacing device is positioned on the outer side wall of the reaction cavity, is connected with the reaction cavity and is used for replacing the substrate on the substrate table.

Optionally, the laser is a solid state laser or other pulsed laser.

Optionally, the first heating element and the second heating element are not in contact with the substrate table, which rotates while depositing the thin film.

Optionally, the substrate table is heated by irradiation after the first heating element and the second heating element are energized.

According to another aspect of the present invention, there is provided a pulsed laser deposition method, comprising: fixing a plurality of substrates on the first surface and the second surface of a substrate table in a reaction cavity, heating the substrates to a preset temperature, and controlling the substrate table to rotate; and linearly enabling a plurality of laser beams generated by a plurality of laser devices to reach the surface of the target along a direction parallel to the surface of the substrate table, so that the source material of the target is sputtered and uniformly deposited on the surface of the substrate, wherein the surface of the target irradiated by the laser beams forms an included angle with the surface of the substrate table.

Optionally, translating the laser device in a horizontal direction to reciprocate a spot of the laser beam on the target surface in a radial direction with respect to a center of the substrate table.

Optionally, the moving speed of the laser device is controlled so that the moving speed of the laser beam spot on the target surface relative to the center of the substrate table moving radially from the center to the edge becomes gradually slower.

According to the pulse laser deposition method provided by the invention, the laser beam is linearly incident to the surface of the target material, and the position of the laser beam on the surface of the target material is changed by moving the laser along the horizontal direction and the vertical direction, so that the energy loss of the laser beam is reduced, the stability of the laser beam is improved, and the deposition rate of a film and the uniformity and stability of the film are also improved.

In the pulse laser deposition method and the device provided by the invention, the laser beam is parallel to the surface of the substrate table, and the surface of the target material and the surface of the substrate table form an included angle, so that the limitation of the target-substrate distance is eliminated, the film deposition with an ultra-large deposition area is realized, the batch preparation of a plurality of films is realized, and the deposition efficiency is improved.

According to the pulse laser deposition device provided by the invention, the laser adopts a horizontal fixing mode, so that the laser beam irradiates the target material linearly, the energy loss of the laser beam after being reflected by the reflecting mirror is reduced, and the deposition speed of the film is accelerated; the laser beam is adopted to irradiate the inclined target material to form plasma, and the plasma is matched with the substrate to rotate along the center, so that the plasma can uniformly deposit a film on the substrate of the substrate, and the uniformity of the deposited film and the film deposition rate are improved

The pulse laser deposition device provided by the invention adopts irradiation heating and is matched with the rotation of the substrate table, so that the extremely high deposition temperature consistency of the substrate table in time and space is ensured, and the performance consistency of films is improved when films are deposited in a large scale.

According to the pulse laser deposition device provided by the invention, the substrate table is heated in a double-sided irradiation heating mode, the substrate table is not contacted with the heating element, and the ultra-large deposition area is matched with double-sided irradiation heating and substrate table rotation, so that the heating element can realize simultaneous deposition of double-sided films while heating the substrate table, the efficiency of large-batch film deposition is further improved, and the performance consistency during film deposition is ensured.

According to the pulse laser deposition method and the device thereof provided by the invention, when the driving device drives the laser to enable the laser beam to form the light spot on the surface of the target to reciprocate along the surface of the target, the movement speed of the light spot from the center to the edge of the substrate table is gradually slowed down, so that the substrate at the edge part of the substrate table can uniformly deposit the film, and the uniformity and the flatness of the film are improved while the large-scale film preparation is realized.

Drawings

The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:

FIG. 1 shows a block diagram of a pulsed laser deposition apparatus according to an embodiment of the present invention;

FIGS. 2a to 2c are views showing a structure of a thin film deposition structure of a pulsed laser deposition apparatus according to an embodiment of the present invention;

FIG. 3a is a block diagram illustrating a substrate table in a pulsed laser deposition apparatus according to an embodiment of the present invention;

FIG. 3b is a block diagram showing a heating element in the pulsed laser deposition apparatus according to the embodiment of the present invention;

FIG. 4 shows a schematic diagram of laser scanning in a pulsed laser deposition apparatus according to an embodiment of the present invention;

FIG. 5 shows laser scan patterns in a pulsed laser deposition apparatus according to an embodiment of the present invention;

fig. 6 shows a top view of a vacuum chamber in a pulsed laser deposition apparatus according to an embodiment of the present invention.

Detailed Description

The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. In addition, certain well known components may not be shown. For simplicity, the semiconductor structure obtained after several steps can be described in one figure.

It will be understood that when a layer or region is referred to as being "on" or "over" another layer or region in describing the structure of the device, it can be directly on the other layer or region or intervening layers or regions may also be present. And, if the device is turned over, that layer, region, or regions would be "under" or "beneath" another layer, region, or regions.

If for the purpose of describing the situation directly above another layer, another area, the expression "directly above … …" or "above and adjacent to … …" will be used herein.

The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.

Fig. 1 shows a block diagram of a pulsed laser deposition apparatus according to an embodiment of the present invention.

Referring to fig. 1, a pulsed laser deposition apparatus 100 according to an embodiment of the present invention includes: a deposition device and two laser devices.

Wherein each laser device comprises: the laser device 110, the first support 111, and the driving device 112, the bottom of the driving device 112 is fixedly connected with the upper surface of the first support 111, the bottom of the laser device 110 is connected with the driving device 112, and is driven by the driving device 112 to perform displacement motion in the horizontal direction and the vertical direction, the laser device 110 is horizontally fixed on the upper portion of the driving device 112, the laser beam is linearly incident into the target surface in the deposition device along the horizontal direction, and a focusing mirror (not shown in the figure) is further integrated on the laser beam emitting surface of the laser device 110. The laser 110 is driven by the driving device 112 to perform displacement motion in the horizontal direction and the vertical direction, so as to change the ablation point of the laser beam on the target surface.

Referring to fig. 1, the driving device 112 includes at least a motor and a rail controlling the moving direction of the laser 110. In order to change the ablation point of the laser beam on the target surface, the scanning driving device in this application at least comprises a driving device 112 and a laser 110, i.e. the present application adopts an integral displacement scanning mode.

The deposition apparatus includes: a reaction chamber 120, a first window 123 on a sidewall of the reaction chamber 120, two second windows 122, and two third windows 125, a second support 124 for supporting the reaction chamber 120, a first motor 121 and a vacuum structure 126 on a sidewall of the reaction chamber 120, respectively, above an exterior of the reaction chamber 120, a target 127 penetrating the third windows 125, and a substrate changer 130. The first window 123 is a substrate replacing window, the substrate replacing apparatus is connected to the reaction chamber through the first window 123 for replacing the substrate for depositing the thin film, the second window 122 is a laser beam incident window, the second window 122 is also an observation window, and the third window 125 is a target machine window, for example. First motor 121 is used for driving the inside substrate platform rotation of reaction chamber 120, vacuum structure 126 is used for carrying out the evacuation to reaction chamber 120 inside, in order to maintain the inside vacuum pressure in reaction chamber 120, in addition, target machine 127 runs through third window 125 on the reaction chamber 120 lateral wall, and the first end of target machine 127 is located the outside of reaction chamber 120, the second end is located the inside of reaction chamber 120, second end at target machine 127, be fixed with at least one target, first end through rotatory target machine 127, the target that the inside laser beam of reaction chamber 120 shines can be changed, a plurality of targets are the second end of polygon distribution at the target machine.

In this embodiment, since the laser beam generated by the laser 110 passes through the focusing mirror and then directly enters the reaction chamber 120 without using a reflecting mirror, the energy loss of the laser beam during the reflection of the laser beam by the reflecting mirror is avoided, and compared with the existing pulsed laser deposition device, the pulsed laser deposition device can achieve the same purpose by using the laser 110 with lower power under the condition of keeping the same energy of the laser beam entering the surface of the target material. While the use of the lower power laser 110 can reduce the cost of the device, for example, in the pulse laser deposition apparatus in the prior art, a high performance industrial-grade excimer laser is generally used, and the selling price is more than 250 ten thousand, while the laser in the present application can use a solid-state laser or other pulse lasers, which are far lower than the high performance industrial-grade excimer laser, for example, according to the power requirement when forming a film, a small solid-state laser, a medium solid-state laser or a large solid-state laser, and other pulse lasers, the volume and selling price of which are far smaller than those of the industrial-grade excimer laser, can be used. Compared with an industrial-grade excimer laser, the cost is reduced, the volume of equipment is reduced, and the whole displacement scanning method of the mobile laser can be easily realized. In addition, because the high-performance industrial level excimer laser adopted in the prior art has larger volume and heavier weight, and can only adopt the method of horizontally placing and then scanning by a reflector, the solid-state laser or other lasers adopted in the application can be obliquely installed at any angle due to small volume and light weight, but the horizontal installation mode is adopted in the application, so that the laser beam of the laser 110 directly enters the target material.

In addition, because the high-performance industrial grade excimer laser adopted in the prior art is large in volume and heavy in weight, the ablation point of the laser beam on the surface of the target is changed by moving the reflecting mirror in the scanning process, the method causes that when the reflecting mirror reflects the laser beam, the reflecting point can be changed, and the energy loss of the laser beam is different at different reflecting points, so that the ablation point of the laser beam on the surface of the target is uneven and inconsistent. In the application, the method of driving the laser 110 to perform integral displacement scanning by the driving device 112 ensures that the lengths of the light paths from the light source to the surface of the target material are approximately the same, the energy losses are consistent, the ablation degree consistency of the laser beam on the surface of the target material is improved, and the uniformity and consistency of the film are further improved. In addition, the laser beam directly enters the surface of the target, so that different reflection powers caused by different reflection positions in the process of reflecting the laser beam by the reflector are avoided, and the uniformity and consistency of the film are further improved.

Further, fig. 2a to 2c are views showing a structure of a thin film deposition structure of the pulsed laser deposition apparatus according to the embodiment of the present invention; FIG. 3a is a block diagram illustrating a substrate table in a pulsed laser deposition apparatus according to an embodiment of the present invention; fig. 3b shows a structural diagram of a heating element in the pulsed laser deposition apparatus according to an embodiment of the present invention. Specifically, fig. 2a to 2c show the structure inside the reaction chamber 120.

Referring to fig. 2a to 2c, the reaction chamber 120 has, for example, a cylindrical structure, a support column 142 connecting upper and lower portions of the reaction chamber 120 is provided inside the reaction chamber 120, and a first heating element 143, a second heating element 145, and a substrate stage 144 are horizontally disposed in a middle region inside the reaction chamber 120. Wherein the substrate table 144 is located between the first heating element 143 and the second heating element 145, and the substrate table 144 is not in contact with both the first heating element 143 and the second heating element 145.

Further, at the edge portions of the first heating element 143 and the second heating element 145, there are connecting members 147, and at the corresponding positions in the reaction chamber 120, there are fixing members (not shown in the drawings) which are matched with the connecting members 147, and the connecting members 147 and the fixing members cooperate to fix the first heating element 143 and the second heating element 145 at the corresponding positions in the reaction chamber 120.

On the surfaces of the first heating element 143 and the second heating element 145 remote from the substrate table 144, electrical connection points 148 are formed for energizing the first heating element 143 and the second heating element 145. The substrate stage 144 is rotated by the first motor 121 above the outside of the reaction chamber 120, so that both the upper and lower surfaces of the substrate stage 144 can be uniformly heated by the first heating element 143 and the second heating element 145 to improve the uniformity of the thin film deposition.

Further, referring to fig. 2b and fig. 3a, the substrate table 144 has a circular structure, and a fixed area 1442 is located at a center of the substrate table 144, the fixed area 1442 is used for fixing the substrate table 144 at a corresponding position in the reaction chamber, and connecting the substrate table 144 with the first motor 121, so that the substrate table 144 can rotate under the driving of the first motor 121. At least one substrate 1441 is disposed on each of the first and second surfaces of the substrate stage 144, and the substrates 1441 are regions where thin films are deposited and are uniformly distributed in regions other than the fixed region 1442 of the substrate stage 144. The shape of the substrate 1441 includes at least one of a circle, a square, a diamond, or any polygon, such as a circle in this embodiment. Both the first and second surfaces of the substrate table 144 have at least one substrate 1441, so that double-sided, large-area, high-volume thin film deposition can be achieved.

In fixing the substrate stage 144, various methods may be employed. For example, the fixing region 1442 of the substrate stage 144 is a through hole penetrating through the substrate stage 144, and the diameter of the through hole is larger than that of the supporting column 142, so that the through hole of the substrate stage 144 can pass through the supporting column 142, and a stopper ring is disposed at a corresponding position of the supporting column 142, by which the height of the substrate stage 144 is located between the first heating element 143 and the second heating element 145. Or the supporting column 142 may be separately contracted toward the upper and lower portions of the reaction chamber 120 at a position between the first heating element 143 and the second heating element 145, respectively, and after the substrate stage 144 is placed between the first heating element 143 and the second heating element 145, the supporting column 142 is extended, thereby clamping the substrate stage 144 at the corresponding position.

Further, referring to fig. 2b and 3b, since the first heating element 143 and the second heating element 145 have the same structure, the first heating element 143 is taken as an example for description, and no additional description is given to the structure of the second heating element 145. The first heating element 143 has a circular structure as a whole, and in the first heating element 143, there is a notch 1431 extending from the edge to the center, the width of the notch 1431 is larger than the diameter of the supporting column 142, and at the same time, the notch 1431 extends to the center of the first heating element 143, so that the first heating element 143 can be horizontally placed and the notch 1431 passes through the supporting column 142, so that the supporting column 142 is located at the center of the first heating element 143.

Further, referring to fig. 2a to 2c, after the first heating element 143 and the second heating element 145 are fixed in the reaction chamber, it can be seen that the target 127 extends along the gap in the heating elements, specifically, the target 127 located above the first heating element 143 extends along the gap 1431 on the first heating element 143 from the edge to the center of the circle, and the target 127 located below the second heating element 145 extends along the gap on the second heating element 145 from the edge to the center of the circle.

In this embodiment, the extension direction of the notch on the first heating element 143 is parallel to the extension direction of the notch on the second heating element 145, but is respectively located at two sides of the supporting column 142, so that the first heating element 143 and the second heating element 145 can improve the uniformity of heating the substrate table 144 when the substrate table 144 is heated.

In other embodiments, the notches 1431 on the first heating element 143 are not parallel to the direction in which the notches on the second heating element 145 extend.

At a second end of the target machine 127, at least one target 141, in this case four targets 141, is fixed, as shown in fig. 2 b. The target 141 is, for example, rectangular and extends from the position of the target machine 127 corresponding to the edge of the first heating element 143 or the second heating element 145 toward the support column 142, so that the plasma 116 formed by the laser beam 115 incident on the surface of the target 141 can reach the first surface and/or the second surface of the substrate stage 144 via the notch. The surface of the target 141 is at an angle to the surface of the first heating element 143 or the second heating element 145 such that the laser beam 115 parallel to the surface of the first heating element 143 or the second heating element 145 can be incident on the target 141 while reciprocating the laser beam 115 in the direction in which the target 141 extends, and the substrate stage 144 is rotated such that the plasma 116 can deposit a thin film in a plurality of substrates 1441 on the surface of the substrate stage 144.

In this embodiment, the same source material or different source materials can be used for the multiple targets 141 at the second end of the target machine 127, and the source materials during the film deposition process can be changed by rotating the target machine 127 during the deposition process, so as to obtain a film of complex material. Therefore, in the pulsed laser deposition apparatus 100 of the present application, deposition of superlattice films such as YBCO (yttrium barium copper oxide) and ITO (indium tin oxide) can be achieved by in-situ target replacement, that is, a multi-layer film heterojunction process, and processes such as a step junction and a double-crystal junction can be achieved, so that not only a film with good performance can be obtained, but also a film with complex materials can be obtained.

Further, the laser beam 115 of the laser 110 incident into the reaction chamber 120 is parallel to the surfaces of the first heating element 143 and the second heating element 145, but the incident direction of the laser beam 115 is perpendicular to the extending direction of the target 127, as shown in fig. 2b and 2c, and thus, the distance of the laser beam 115 from the light source to the surface of the target 141 is shortened.

In other embodiments, when the pulsed laser deposition apparatus 100 of the present application is used for thin film deposition, a single-sided deposition process or a double-sided deposition process may be used. In the case of double-sided deposition, it is preferable to use substrates 1441 having different sizes on the first and second surfaces of the substrate stage 144, so that films having different areas can be deposited simultaneously. In addition, the size of the substrate 1441 on the substrate stage 144 may be changed to change the area of the thin film obtained during the thin film deposition, for example, a process of forming an oversized thin film on one side surface of the substrate stage 144 may be realized, and a process of forming a large number of small-area thin films on one side surface of the substrate stage 144 may also be realized.

FIG. 4 shows a schematic diagram of laser scanning in a pulsed laser deposition apparatus according to an embodiment of the present invention; fig. 5 shows laser scanning patterns in a pulsed laser deposition apparatus according to an embodiment of the present invention. The description will be given by projecting the target 141, the plasma 116, and the substrate stage 144 onto the X-plane and the Y-plane, respectively, with the line on which the laser beam 115 is located as the Y-axis and the line on which the target machine 127 is located as the X-axis.

Referring to FIG. 4, the deposition of a thin film in the present application is briefly illustrated by the deposition of the second (lower) surface of the substrate table 144 in FIG. 2 b. As can be seen from the projected image in the Y plane, the laser beam 115 is directed toward the surface of the target 141Y parallel to the surface of the substrate table 144Y in the Y-axis direction, and the surface of the target 141Y is at an angle to the lower surface of the substrate table 144Y, so that the laser beam 115 can be incident on the upper surface of the target 141Y, and simultaneously, the plasma 116Y formed on the surface of the target 141Y is perpendicular to the surface of the target 141Y to reach the lower surface of the substrate table 144Y, and a thin film is deposited on the lower surface of the substrate table 144Y. As can be seen from the projection image in the X plane, the length of the target 141X is not smaller than the radius of the substrate table 144X, and the movement track of the laser beam 115 on the surface of the target 141X is shown in fig. 5, i.e., the laser beam 115 does not only reciprocate between the center and the edge of the substrate table 144 along the X direction, but also slightly lift or lower along the Z axis direction, thereby not only realizing the deposition of a thin film on the surface of the substrate table 144, but also improving the utilization rate of the target 141.

Further, referring to fig. 4, substrate table 144 is rotated (as indicated by the arrow in the figure) about the center of the circle, the rotation direction being clockwise or counterclockwise, in cooperation with the reciprocating movement of laser beam 115 in the X-axis direction, so that the contact area 117 between plasma 116 and the second surface of substrate table 144 is also changed on the surface of substrate table 144, thereby enabling the surface area of substrate table 144 to be subjected to thin film deposition.

In this embodiment, when the laser beam 115 reciprocates on the target surface from the center to the edge of the substrate table 144 in the x direction, the movement speed of the laser beam 115 near the edge of the substrate table 144 is slow, because the area of the edge of the substrate table 144 is large, and when the substrate table 144 rotates on its own axis, the rotation of the edge portion is relatively fast in the vicinity of the center, and the speed of the laser beam 115 is correspondingly set to be gradually slow in the movement process from the center to the edge, so that the uniformity of the thin film deposition can be improved.

As shown in the figure, the main body of the reaction chamber 120 is cylindrical, and a first window 123, a second window 122, a third window 125, a second window 122 and a third window 125 are respectively distributed on the side wall of the reaction chamber 120 clockwise around the side wall of the reaction chamber 120, wherein the first window 123 is a substrate stage transfer window for replacing the substrate stage 144; the second window 122 is a laser scanning sputtering window for incidence of the laser beam into the reaction chamber 120; the third window 125 is a moving window of the drone, and changes the target material on which the laser beam is incident by rotating the drone.

Of these five windows, a second window 122 located above the first window 123 is grouped with a third window 125 having a height slightly higher or lower than that of the first window 123 on the sidewall of the reaction chamber 120; a second window 122 and a third window 125, which are located below the first window 123, are formed in a set, and have a height on the sidewall of the reaction chamber 120 that is slightly lower or higher than the height of the first window 123. Meanwhile, the second window 122 and the third window 125 in each group are oriented substantially perpendicular to each other, so that the laser beam is incident on the target.

While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.

Claims

1. A pulsed laser deposition apparatus, comprising:

the device comprises a reaction cavity, a plurality of second windows are arranged on the cavity wall of the reaction cavity, a supporting column for fixing a substrate table, a first heating element positioned above the substrate table and a second heating element positioned below the substrate table are arranged in the reaction cavity;

the target machines penetrate through the side wall of the reaction cavity, targets are fixed at the second ends of the target machines and are positioned above and/or below the substrate table in the reaction cavity, and included angles are formed between the surfaces of the targets and the surfaces of the substrate table;

a plurality of laser devices positioned outside the reaction chamber, wherein the laser devices respectively generate laser beams which are incident on the surface of the target material in the reaction chamber through the plurality of second windows,

the first heating element and the second heating element are respectively provided with a notch, laser beams of a plurality of laser devices linearly reach the surface of the target along a direction parallel to the surface of the substrate table, and plasma formed by irradiating the surface of the target by the laser beams reaches the surface of the substrate table through the notches on the first heating element and the second heating element.

2. The pulsed laser deposition apparatus of claim 1, wherein the plurality of laser devices are horizontally positioned such that the laser beams are horizontally incident on an inclined surface of the target.

3. The pulsed laser deposition apparatus of claim 2, wherein the laser apparatus comprises:

a laser for generating a laser beam;

the driving device is connected with the laser and drives the laser to reciprocate and vertically move;

the driving device is horizontally fixed on the first support.

4. The pulsed laser deposition apparatus of claim 3, wherein the laser beam of the reciprocating laser apparatus moves in a radial direction with respect to the center of the substrate table at a spot on the target surface.

5. The pulsed laser deposition apparatus of claim 4, wherein the laser device is translated in a vertical direction to move the laser beam spot on the target surface up or down when the spot reaches a central or edge position of the target surface relative to the substrate table.

6. The pulsed laser deposition apparatus according to claim 3, wherein the driving device controls the movement speed of the laser such that the movement speed of the laser beam spot on the target surface is gradually reduced with respect to the movement speed of the substrate stage in a radial direction from the center to the edge.

7. The pulsed laser deposition apparatus according to claim 1, wherein the target is fixed to the second end of the target machine and has a plurality of targets that are distributed in a polygon shape.

8. The pulsed laser deposition apparatus according to claim 7, wherein the materials of the plurality of targets are the same or different.

9. The pulsed laser deposition apparatus according to claim 7, wherein the target machine is rotated to replace a target material on which the laser beam is incident.

10. The pulsed laser deposition apparatus of claim 1, wherein the first surface and the second surface of the substrate table each have at least one substrate.

11. The pulsed laser deposition apparatus of claim 1, further comprising:

the second bracket is positioned below the outer part of the reaction cavity, is connected with the reaction cavity and is used for fixing the reaction cavity;

the first motor is positioned above the outer part of the reaction cavity, is connected with the substrate table and is used for controlling the substrate table to rotate;

the vacuum device is positioned on the outer side wall of the reaction cavity, is connected with the reaction cavity and is used for maintaining the vacuum environment in the reaction cavity;

and the substrate replacing device is positioned on the outer side wall of the reaction cavity, is connected with the reaction cavity and is used for replacing the substrate on the substrate table.

12. The pulsed laser deposition apparatus of claim 1, wherein the laser is a solid state laser or other pulsed laser.

13. The pulsed laser deposition apparatus of claim 1, wherein the first heating element and the second heating element are not in contact with the substrate table, which rotates while depositing a thin film.

14. The pulsed laser deposition apparatus of claim 13, wherein the substrate table is radiatively heated after the first heating element and the second heating element are energized.

15. A pulsed laser deposition method, comprising:

fixing a plurality of substrates on the first surface and the second surface of a substrate table in a reaction cavity, heating the substrates to a preset temperature, and controlling the substrate table to rotate;

linearly reaching the surface of the target along the direction parallel to the surface of the substrate table by a plurality of laser beams generated by a plurality of laser devices, so that the source material of the target is sputtered and uniformly deposited on the surface of the substrate,

wherein the surface of the target irradiated by the laser beam forms an included angle with the surface of the substrate table.

16. The pulsed laser deposition method of claim 15, wherein translating the laser device in a horizontal direction reciprocates a spot of the laser beam on the target surface in a radial direction with respect to a center of the substrate table.

17. The pulsed laser deposition method of claim 16, wherein the laser device is translated in a vertical direction to move the laser beam spot on the target surface up or down when the spot reaches a central or edge position of the target surface relative to the substrate table.

18. The pulsed laser deposition method according to claim 16, wherein a moving speed of the laser device is controlled such that a moving speed of the laser beam spot on the target surface moving radially from a center to an edge with respect to a center of the substrate stage becomes gradually slower.