CN113443601B - A MEMS inertial sensor chip module and preparation method thereof - Google Patents
A MEMS inertial sensor chip module and preparation method thereof Download PDFInfo
- Publication number
- CN113443601B CN113443601B CN202110806106.0A CN202110806106A CN113443601B CN 113443601 B CN113443601 B CN 113443601B CN 202110806106 A CN202110806106 A CN 202110806106A CN 113443601 B CN113443601 B CN 113443601B
- Authority
- CN
- China
- Prior art keywords
- sensor chip
- inertial sensor
- mems inertial
- support column
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 33
- ROXBGBWUWZTYLZ-UHFFFAOYSA-N [6-[[10-formyl-5,14-dihydroxy-13-methyl-17-(5-oxo-2h-furan-3-yl)-2,3,4,6,7,8,9,11,12,15,16,17-dodecahydro-1h-cyclopenta[a]phenanthren-3-yl]oxy]-4-methoxy-2-methyloxan-3-yl] 4-[2-(4-azido-3-iodophenyl)ethylamino]-4-oxobutanoate Chemical compound O1C(C)C(OC(=O)CCC(=O)NCCC=2C=C(I)C(N=[N+]=[N-])=CC=2)C(OC)CC1OC(CC1(O)CCC2C3(O)CC4)CCC1(C=O)C2CCC3(C)C4C1=CC(=O)OC1 ROXBGBWUWZTYLZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 238000003466 welding Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000007781 pre-processing Methods 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 2
- 238000005476 soldering Methods 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 13
- 230000010354 integration Effects 0.000 abstract description 9
- 230000008646 thermal stress Effects 0.000 abstract description 7
- 238000009517 secondary packaging Methods 0.000 abstract description 3
- 238000009516 primary packaging Methods 0.000 abstract 2
- NMWSKOLWZZWHPL-UHFFFAOYSA-N 3-chlorobiphenyl Chemical compound ClC1=CC=CC(C=2C=CC=CC=2)=C1 NMWSKOLWZZWHPL-UHFFFAOYSA-N 0.000 description 7
- 101001082832 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) Pyruvate carboxylase 2 Proteins 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0083—Temperature control
- B81B7/009—Maintaining a constant temperature by heating or cooling
- B81B7/0093—Maintaining a constant temperature by heating or cooling by cooling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/0023—Packaging together an electronic processing unit die and a micromechanical structure die
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Gyroscopes (AREA)
Abstract
本发明公开了一种MEMS惯性传感器芯片模组及其制备方法，本发明MEMS惯性传感器芯片模组，包括壳体，所述壳体分别固定有PCB板和金属支撑柱，所述金属支撑柱上支承有MEMS惯性传感器芯片组件，所述MEMS惯性传感器芯片组件上的连接端子通过金属线与PCB板上的连接端子相互连接。本发明无需一级封装工艺，大幅度降低封装及集成成本，缩小集成体积，避免了表面安装涉入的热应力，也能实现快速热传导，可保有MEMS惯性传感器芯片级各项性能指标，能够改善现有技术对MEMS惯性传感器芯片的应用限制，避免一级封装或二级封装热应力的对系统集成应用的影响。
The present invention discloses a MEMS inertial sensor chip module and a preparation method thereof. The MEMS inertial sensor chip module of the present invention comprises a housing, wherein the housing is respectively fixed with a PCB board and a metal support column, wherein a MEMS inertial sensor chip assembly is supported on the metal support column, and the connection terminals on the MEMS inertial sensor chip assembly are mutually connected with the connection terminals on the PCB board through metal wires. The present invention does not require a primary packaging process, greatly reduces the packaging and integration costs, reduces the integration volume, avoids the thermal stress involved in surface mounting, can also achieve rapid heat conduction, can maintain various performance indicators of the MEMS inertial sensor chip level, can improve the application restrictions of the prior art on the MEMS inertial sensor chip, and avoids the influence of the primary packaging or secondary packaging thermal stress on the system integration application.
Description
Technical Field
The invention relates to a semiconductor device, in particular to a MEMS inertial sensor chip module and a preparation method thereof, which are used for the integrated assembly of inertial sensor chips such as MEMS gyroscopes, MEMS accelerometers and the like.
Background
The MEMS inertial sensor chip is first packaged in ceramic tube shell, plastic package, COB package and other first-stage package forms before being assembled, and then mounted onto PCB or other substrate together with passive element via Surface Mounting Technology (SMT), direct chip mounting technology (DCA), through hole mounting technology (THT) and other technology, to form part or whole machine.
In the first-level packaging and the second-level packaging, the thermal expansion Coefficient (CTE) difference between materials is large, so that thermal stress and welding stress are easily caused, the MEMS inertial sensor chip is easily influenced by packaging stress and welding stress, especially the full-temperature characteristic index, in the single-chip integrated packaging, the ASIC and the MEMS chip are often overlapped, the output performance of the MEMS is also influenced by the heat generated by the ASIC, in addition, the die opening or the processing and manufacturing cost of a ceramic tube shell, a ceramic substrate, a plastic tube shell and the like is relatively high, the universality is not realized, the volume of the MEMS inertial sensor chip is obviously increased by several times, even more than that of the MEMS inertial sensor chip, and the volume contradiction is particularly obvious in the Inertial Measurement Unit (IMU) integrated application.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the MEMS inertial sensor chip module and the preparation method thereof, which do not need a first-stage packaging process, greatly reduce packaging and integration cost, reduce integration volume, avoid thermal stress involved in surface mounting, realize quick heat conduction, maintain various performance indexes of the MEMS inertial sensor chip level, improve the application limit of the prior art on the MEMS inertial sensor chip, and avoid the influence of the first-stage packaging or second-stage packaging thermal stress on system integration application.
In order to solve the technical problems, the invention adopts the following technical scheme:
the utility model provides a MEMS inertial sensor chip module, includes the casing, the casing is fixed with PCB board and metal support column respectively, the support has MEMS inertial sensor chip assembly on the metal support column, connecting terminal on the MEMS inertial sensor chip assembly passes through the connecting terminal interconnect on metal wire and the PCB board.
The MEMS inertial sensor chip assembly comprises an MEMS inertial sensor chip and a substrate with the same and similar thermal expansion coefficient as the MEMS inertial sensor chip, wherein the MEMS inertial sensor chip is fixed on the substrate, and the substrate is supported and fixed on the end face of the metal support column.
And the substrate is also provided with an AISC circuit chip for pre-processing the output of the MEMS inertial sensor chip.
And the PCB is provided with a via hole, and the metal support columns penetrate through the via hole to enable the PCB and the MEMS inertial sensor chip component to be arranged in parallel.
The shell comprises an upper cover, a main shell and a sealing ring, wherein the upper cover and the main shell are connected through a connecting piece, the sealing ring is arranged between the end faces of the upper cover and the main shell, and the metal support column is fixed on the inner wall of the upper cover or the main shell in a pasting mode.
The metal wire is a gold wire formed by a gold wire ball welding mode.
The upper cover and the main shell are made of ceramics or metal.
The substrate is made of silicon or glass.
The metal support column is made of tungsten copper alloy.
The invention also provides a preparation method of the MEMS inertial sensor chip module, which comprises the following steps:
1) The components of the PCB are welded, mounted and fixed on the main shell;
2) Cutting a substrate by adopting a nanosecond laser cutting machine, cleaning, depositing a metal conducting layer on the surface of the substrate by adopting a magnetron sputtering method, pasting an MEMS inertial sensor chip and an AISC circuit chip on the substrate by adopting conductive silver paste, and drying and curing to obtain an MEMS inertial sensor chip component;
3) Connecting a connecting terminal on the MEMS inertial sensor chip assembly with a connecting terminal on the PCB in a gold wire ball welding mode;
4) And placing the main shell in a nitrogen-filled environment, connecting the upper cover and the main shell through a connecting piece, arranging the sealing ring between the end surfaces of the upper cover and the main shell to obtain a shell, and sealing the edge gap of the assembled shell by adopting vacuum sealant.
Compared with the prior art, the MEMS inertial sensor chip module has the following advantages:
1. The MEMS inertial sensor chip assembly can adopt a monocrystalline silicon substrate to modularize a single-chip MEMS sensor chip or seal the MEMS sensor chip and an ASIC circuit in a combined mode, a first-level packaging process is not needed, packaging and integration cost is greatly reduced, the integration volume is reduced, the application limit of the MEMS inertial sensor chip in the prior art can be improved, and the influence of thermal stress of first-level packaging or second-level packaging on system integration application is avoided.
2. According to the invention, the PCB and the metal support column are respectively fixed on the shell, the MEMS inertial sensor chip assembly is supported on the metal support column and is fixed with the shell in a sticking way through the metal support column, so that the MEMS inertial sensor chip assembly forms a suspension isolation scheme, and is directly connected with the PCB by adopting gold wire bonding, thereby avoiding thermal stress involved in surface mounting, realizing rapid heat conduction, and ensuring various performance indexes of the MEMS inertial sensor chip.
3. The metal support column can play a role in heat conduction, so that heat accumulation of the MEMS inertial sensor chip assembly is prevented, and the accuracy of the MEMS inertial sensor chip assembly is improved.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional exploded structure of a MEMS inertial sensor chip module according to the present embodiment.
Fig. 2 is a schematic perspective view of a MEMS inertial sensor chip assembly according to this embodiment.
Fig. 3 is a schematic diagram of an external structure of a MEMS inertial sensor chip module according to the present embodiment.
Fig. 4 is a schematic cross-sectional view of the MEMS inertial sensor chip assembly according to this embodiment.
Fig. 5 is a schematic diagram of connection pins of the MEMS inertial sensor chip and the AISC circuit chip in this embodiment.
FIG. 6 is a smoothed curve of the full temperature zero bias stability 10s for a 15g accelerometer module assembly sample according to this embodiment.
FIG. 7 is a smoothed curve of the full temperature zero bias stability 10s for a15 g accelerometer non-module mounting sample according to this embodiment.
FIG. 8 is a graph of temperature compensation for a 15g accelerometer module assembly sample Wen Xiangwen according to this embodiment.
Fig. 9 is a graph showing the comparison of the temperature rise and temperature compensation of a 15g accelerometer module #2 according to the present embodiment.
Fig. 10 is a graph showing the comparison of the temperature rise and temperature compensation of a certain 15g accelerometer non-module #2 in this embodiment.
FIG. 11 is a table showing the temperature compensation effect of an accelerometer module assembly sample according to the present embodiment.
The illustration comprises 1, a shell, 11, an upper cover, 12, a main shell, 13, a sealing ring, 2, a PCB board, 21, a via hole, 3, a metal support column, 4, an MEMS inertial sensor chip assembly, 41, an MEMS inertial sensor chip, 42, a substrate, 43 and an AISC circuit chip.
Detailed Description
As shown in fig. 1, 2 and 3, the MEMS inertial sensor chip module of this embodiment includes a housing 1, the housing 1 is fixed with a PCB board 2 and a metal support column 3, the MEMS inertial sensor chip module 4 is supported on the metal support column 3, and connection terminals on the MEMS inertial sensor chip module 4 are connected with connection terminals on the PCB board 2 through metal wires.
As shown in fig. 1,2 and 4, in the present embodiment, the MEMS inertial sensor chip assembly 4 includes a MEMS inertial sensor chip 41 and a substrate 42 having the same similar coefficient of thermal expansion as the MEMS inertial sensor chip 41, the MEMS inertial sensor chip 41 is fixed to the substrate 42, and the substrate 42 is supported and fixed to an end face of the metal support column 3.
The MEMS inertial sensor chip assembly 4 may be a single-chip MEMS sensor chip modularized by a single-crystal silicon substrate or a MEMS sensor chip and an ASIC circuit sealed together. For example, as an alternative implementation manner, as shown in fig. 1, an AISC circuit chip 43 for performing a pre-processing on the output of the MEMS inertial sensor chip 41 is further provided on the substrate 42 in this embodiment, where the AISC circuit chip 43 specifically uses an ACC1904B chip, and the pin connection is shown in fig. 5.
As shown in fig. 1 and 4, in this embodiment, the PCB 2 is provided with a via 21, and the metal support columns 3 are disposed through the via 21, so that the PCB 2 and the MEMS inertial sensor chip assembly 4 are disposed parallel to each other. The metal support column 3 isolates the MEMS inertial sensor chip assembly 4 from the PCB 2 through the PCB 2 with the through hole 21, and various chips on the MEMS inertial sensor chip assembly 4 are interconnected with the PCB 2 through metal wires.
As shown in fig. 4, in this embodiment, the metal support columns 3 are connected to the back surface of the region of the AISC circuit chip 43 on the substrate 42, which is beneficial to improving the heat dissipation effect on the AISC circuit chip 43.
As shown in fig. 1,3 and 4, in the present embodiment, the housing 1 includes an upper cover 11, a main housing 12 and a sealing ring 13, the upper cover 11 and the main housing 12 are connected by a connecting piece, and the sealing ring 13 is disposed between end surfaces of the upper cover 11 and the main housing 12, and the metal support column 3 is adhered and fixed on an inner wall of the upper cover 11 or the main housing 12 (specifically, in the present embodiment, the inner wall of the main housing 12 is adhered and fixed by using a high heat conduction silver adhesive).
In this embodiment, the metal wire is a wire formed by wire ball bonding, and the specific specification is 1mil.
The upper cover 11 and the main casing 12 may be made of ceramics or metal, for example, aluminum alloy in the present embodiment, as required.
The substrate 42 may be made of a silicon material or a glass material having the same or similar thermal expansion coefficient as the MEMS inertial sensor chip 41, as required. For example, the substrate 42 in this embodiment is made of prex7740 glass.
In this embodiment, the metal support columns 3 are made of tungsten copper alloy.
The embodiment also provides a preparation method of the MEMS inertial sensor chip module, which comprises the following steps:
1) The components of the PCB 2 are welded, mounted and fixed on the main shell 12;
2) Cutting a substrate 42 by a nanosecond laser cutting machine and cleaning (cleaning by a semiconductor wafer standard cleaning flow in the embodiment), depositing a metal conductive layer on the surface of the substrate 42 by a magnetron sputtering method (realizing that a connecting terminal of a chip on the substrate is connected with an external circuit and is processed), pasting an MEMS inertial sensor chip 41 and an AISC circuit chip 43 on the substrate 42 by conductive silver adhesive, drying and curing to obtain an MEMS inertial sensor chip assembly 4, pasting the MEMS inertial sensor chip assembly 4 on a metal support column 3, drying and curing, pasting the metal support column 3 on the inner wall of a main shell 12 through a via 21 on a PCB (printed circuit board) board 2 by high-heat-conductivity silver adhesive, and curing at a high temperature;
3) The connecting terminals on the MEMS inertial sensor chip assembly 4 are connected with the connecting terminals on the PCB 2 through a gold wire ball welding mode, the integrated module is connected with the PCB through a gold wire direct wire bonding mode, the influence of the welding stress of the secondary packaging is directly avoided, and meanwhile, the whole interconnecting process is simpler;
4) The main shell 12 is placed in a nitrogen-filled environment, the upper cover 11 and the main shell 12 are connected through a connecting piece, a sealing ring 13 is arranged between the end faces of the upper cover 11 and the main shell 12 to obtain the shell 1, and the edge gap of the assembled shell 1 is sealed by vacuum sealant.
During the integrated assembly of this module, MEMS inertial sensor chip 41, AISC circuit chip 43 adopt the tiling mode to paste to base plate 42 on, and the metal support column 3 adopts tungsten copper alloy material, so can be fast with AISC circuit chip 43 production heat conduction away, also can avoid the direct effect of heat to MEMS inertial sensor chip 41 simultaneously.
In this embodiment, a whole machine full-temperature area performance test is performed by adopting a certain 15g accelerometer, the module is a sample adopting the MEMS inertial sensor chip module of this embodiment, the non-module is a sample not adopting the MEMS inertial sensor chip module of this embodiment, and the comparison test is shown in fig. 6, 7, 8, 10 and 11. Fig. 6 is a smoothed curve of the full-temperature zero-bias stability 10s of a 15g accelerometer module assembly sample in this embodiment, fig. 7 is a smoothed curve of the full-temperature zero-bias stability 10s of a 15g accelerometer non-module assembly sample in this embodiment, fig. 8 is a temperature compensating graph of a 15g accelerometer module assembly sample Wen Xiangwen in this embodiment, fig. 9 is a graph of a 15g accelerometer module #2 before and after temperature compensating, fig. 10 is a graph of a 15g accelerometer non-module #2 before and after temperature compensating, and fig. 11 is a table of temperature compensating effect data of an accelerometer module assembly sample in this embodiment. Comparing with the graphs 6-11, it can be known that the bias stability 10s smooth data curve of the whole temperature area of the sample adopting the MEMS inertial sensor chip module of the embodiment is smooth, no temperature hysteresis phenomenon exists in the temperature range of-40 ℃ to 60 ℃, no obvious abnormal fluctuation point exists in the data acquisition point of the whole temperature area, the repeatability of multi-round test is good, the sample not adopting the MEMS inertial sensor chip module of the embodiment is directly packaged by adopting a ceramic or metal tube shell, the secondary packaging is attached to the sample of the PCB, the bias stability 10s smooth data curve of the whole temperature area has obvious temperature hysteresis effect and zero disconnection phenomenon, the sectional fitting curve is combined with Wen Xiangwen temperature compensation curve, and the sample adopting the MEMS inertial sensor chip module of the embodiment is obviously superior to the ceramic or metal tube shell packaging or ceramic or metal substrate packaging is attached to the sample of the PCB in the temperature compensation effect and the whole consistency and stability of the temperature compensation sample.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above examples, and all technical solutions belonging to the concept of the present invention belong to the protection scope of the present invention. It should be noted that modifications and adaptations to the present invention may occur to one skilled in the art without departing from the principles of the present invention and are intended to be within the scope of the present invention.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110806106.0A CN113443601B (en) | 2021-07-16 | 2021-07-16 | A MEMS inertial sensor chip module and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110806106.0A CN113443601B (en) | 2021-07-16 | 2021-07-16 | A MEMS inertial sensor chip module and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113443601A CN113443601A (en) | 2021-09-28 |
| CN113443601B true CN113443601B (en) | 2025-02-07 |
Family
ID=77816440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110806106.0A Active CN113443601B (en) | 2021-07-16 | 2021-07-16 | A MEMS inertial sensor chip module and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113443601B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115092877A (en) * | 2022-06-09 | 2022-09-23 | 南京理工大学 | Low-stress packaging structure and method for MEMS (micro-electromechanical systems) inertial device based on kovar alloy |
| CN115615457B (en) * | 2022-08-04 | 2024-05-07 | 南京理工大学 | A method for analyzing temperature hysteresis error of MEMS inertial system |
| CN115285934B (en) * | 2022-08-10 | 2024-11-15 | 河北美泰电子科技有限公司 | An assembly method and assembly housing for solving welding stress of MEMS inertial chip |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109292727A (en) * | 2018-11-13 | 2019-02-01 | 北方电子研究院安徽有限公司 | A Two-Chip MEMS Gyroscope with Temperature Compensation |
| CN215364898U (en) * | 2021-07-16 | 2021-12-31 | 湖南天羿领航科技有限公司 | A MEMS inertial sensor chip module and MEMS sensor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201103107A (en) * | 2009-07-07 | 2011-01-16 | Jung-Tang Huang | Method for packaging micromachined devices |
| CN106298704B (en) * | 2016-10-11 | 2018-05-29 | 中国科学院地质与地球物理研究所 | A kind of band is heat sink and the MEMS package of magnetic screen and preparation method thereof |
| CN106564852A (en) * | 2016-10-20 | 2017-04-19 | 北方电子研究院安徽有限公司 | Packaging structure for high-impact MEMS inertial sensor chip |
| CN213301319U (en) * | 2020-11-05 | 2021-05-28 | 深圳市华普微电子有限公司 | Small-sized ADC sensor and temperature, humidity, acceleration, optical and combined sensor |
-
2021
- 2021-07-16 CN CN202110806106.0A patent/CN113443601B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109292727A (en) * | 2018-11-13 | 2019-02-01 | 北方电子研究院安徽有限公司 | A Two-Chip MEMS Gyroscope with Temperature Compensation |
| CN215364898U (en) * | 2021-07-16 | 2021-12-31 | 湖南天羿领航科技有限公司 | A MEMS inertial sensor chip module and MEMS sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113443601A (en) | 2021-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113443601B (en) | A MEMS inertial sensor chip module and preparation method thereof | |
| JP5554092B2 (en) | Method for manufacturing electronic device package | |
| JP2004003886A (en) | Sensor package | |
| JPS5817421B2 (en) | semiconductor pressure sensor | |
| TWI270184B (en) | Package for mounting an optical element and a method of manufacturing the same | |
| CN110207885A (en) | Pressure sensor core, core manufacture and packaging method and pressure sensor based on upside-down mounting welding core | |
| JP2014048072A (en) | Pressure sensor module | |
| KR20110027816A (en) | Base member for packaging device device and package | |
| CN108695286B (en) | Package with components connected to carrier via spacer particles | |
| JP3374620B2 (en) | Semiconductor pressure sensor | |
| CN114739571B (en) | Packaging device of MEMS pressure sensor | |
| CN108231698A (en) | Ceramic pad array shell | |
| CN215364898U (en) | A MEMS inertial sensor chip module and MEMS sensor | |
| CN105047615B (en) | The encapsulating structure and packaging method of MEMS sensor | |
| CN100594605C (en) | Semiconductor device | |
| CN111510835B (en) | Packaging structure and manufacturing method of solid conduction MEMS microphone and mobile terminal | |
| CN115285934B (en) | An assembly method and assembly housing for solving welding stress of MEMS inertial chip | |
| CN114166198B (en) | Electronic device | |
| JP2002134659A (en) | Electronic element substrate, method of manufacturing the same, and electronic element and method of manufacturing the same | |
| US9166553B2 (en) | Surface acoustic wave (SAW) device package and method for fabricating same | |
| CN208443926U (en) | Electric-field sensor package assembling | |
| CN108508283B (en) | Electric field sensor package assembly and batch manufacturing method thereof | |
| JPH10321874A (en) | Semiconductor pressure sensor and manufacture thereof | |
| JP4642634B2 (en) | Manufacturing method of acoustic sensor | |
| TW202120423A (en) | Sensor arrangement and method for fabricating a sensor arrangement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |