CN113435382B - Sensing device - Google Patents

Abstract

A sensing device includes a sensing structure layer, a first organic layer, a first light-shielding pattern, a second organic layer, a second light-shielding pattern, a third organic layer, a third light-shielding pattern and a plurality of microlenses. The first organic layer is located on the sensing structure layer and has a first opening. The first light-shielding pattern is located on the first organic layer. The first organic layer is located on the first light-shielding pattern and has a second opening, wherein the overlapping ratio of the second opening and the projection of the first opening on the substrate along the normal direction of the substrate is less than 10%. The second light-shielding pattern is located on the second organic layer. The third organic layer is located on the second light-shielding pattern. The third light-shielding pattern is located on the third organic layer. A plurality of microlenses are located on the third organic layer.

Description

Sensing device

technical field

The invention relates to a sensing device, and in particular to a fingerprint sensing device.

Background technique

Currently, portable electronic devices equipped with biometric identification systems (such as fingerprints or irises) are developing toward full screens or ultra-narrow bezels. Therefore, under-display optical sensors have been applied to portable electronic devices in recent years. The above-mentioned under-screen optical sensor is a micro-optical imaging device arranged under the screen of the portable electronic device, and obtains an image of an object pressed above the screen through a part of the light-transmitting area of the screen. Taking the under-display fingerprint sensor as an example, it generally includes a sensing structure layer and an optomechanical structure layer disposed above it, wherein the optomechanical structure layer must be designed with a certain thickness as the focal length because of the microlens, so that the light The mechanical structure layer includes a thick film structure with multiple layers stacked on top of each other; however, the thick film structure itself has a relatively large stress, which causes the fingerprint sensor to warp after formation, which is of great concern to subsequent fingerprint sensors, for example. Processes such as cutting or bonding with display panels will have adverse effects.

Contents of the invention

The invention provides a sensing device, which can solve the problem of warping caused by being provided with a multi-layer structure.

The sensing device of the present invention includes a sensing structure layer, a first organic layer, a first light-shielding pattern, a second organic layer, a second light-shielding pattern, a third organic layer, a third light-shielding pattern and a plurality of microlenses. The sensing structure layer is located on the substrate and includes a plurality of sensing units, scanning lines and reading lines. The first organic layer is located on the sensing structure layer and has a plurality of first openings. The first light shielding pattern is located on the first organic layer and defines a first light passing area, wherein the first light passing area corresponds to the sensing elements of the plurality of sensing units. The first organic layer is located on the first light-shielding pattern and has a second opening, wherein the overlapping ratio of the second opening and the projection of the first opening on the substrate along the normal direction of the substrate is less than 10%. The second light shielding pattern is located on the second organic layer and defines a second light passing area, wherein the second light passing area corresponds to the first light passing area. The third organic layer is located on the second light-shielding pattern. The third light shielding pattern is located on the third organic layer and defines a third light passing area, wherein the third light passing area corresponds to the second light passing area. A plurality of microlenses are located in the third light passing region.

In an embodiment of the present invention, the above sensing device further includes a filter layer and a fourth organic layer. The filter layer is located on the second light-shielding pattern and formed in the second opening. The fourth organic layer is located on the filter layer and disposed between the second organic layer and the third organic layer.

In an embodiment of the present invention, the above-mentioned fourth organic layer has a third opening, the third opening corresponds to the first opening, and the overlapping of the projections of the third opening and the second opening on the substrate along the normal direction of the substrate rate is less than 10%.

In an embodiment of the present invention, the above-mentioned fourth organic layer has a third opening, the overlapping ratio of the third opening and the projection of the first opening on the substrate along the normal direction of the substrate is less than 10%, and the third opening and The overlapping rate of the projection of the second opening on the substrate along the normal direction of the substrate is less than 10%.

In an embodiment of the present invention, the extension direction of the above-mentioned first opening and the extension direction of the second opening are substantially parallel to the second direction, and the first opening and the second opening respectively correspond to adjacent reading lines.

In an embodiment of the present invention, the extension direction of the above-mentioned first opening, the extension direction of the second opening, and the extension direction of the third opening are substantially parallel to the extension direction of the reading line, and the first opening and the second opening are respectively Corresponds to adjacent read lines.

In an embodiment of the present invention, the extension direction of the above-mentioned first opening and the extension direction of the second opening are substantially parallel to the extension direction of the scanning line, and the first opening and the second opening respectively correspond to adjacent scanning lines. .

In an embodiment of the present invention, the above-mentioned first opening includes a first longitudinal opening and a first transverse opening, and the second opening includes a second longitudinal opening and a second transverse opening, wherein the extending direction of the first longitudinal opening and the second The extending direction of the two longitudinal openings is substantially parallel to the extending direction of the reading line, and the first longitudinal opening and the second longitudinal opening respectively correspond to adjacent reading lines, wherein the extending direction of the first transverse opening and the second transverse opening The extending direction of the scanning line is substantially parallel to the extending direction of the scanning line, and the first lateral opening and the second lateral opening respectively correspond to adjacent scanning lines.

In an embodiment of the present invention, the extension direction of the above-mentioned first opening, the extension direction of the second opening, and the extension direction of the third opening are substantially parallel to the extension direction of the reading line, and the first opening, the second opening And the adjacent projections of the third opening on the substrate along the normal direction of the substrate respectively correspond to three adjacent reading lines.

In an embodiment of the present invention, the above-mentioned sensing device further includes a first inorganic layer and a second inorganic layer, the first inorganic layer is located between the first organic layer and the second organic layer, wherein the first light-shielding pattern is disposed on On the first inorganic layer, and the second inorganic layer is located between the second organic layer and the third organic layer, wherein the second light-shielding pattern is disposed on the second inorganic layer.

In an embodiment of the present invention, each of the plurality of sensing units includes an active element and a sensing element, wherein the active element is electrically connected to the sensing element.

Based on the above, in the sensing device of the present invention, at least two organic layers are provided with a plurality of openings, and the overlapping ratio of the projections of the openings of adjacent organic layers on the substrate along the normal direction of the substrate is less than 10%. This can reduce the stress of the original non-patterned multi-layer organic layers to achieve the effect of stress dispersion, thereby avoiding the problem of warping of the sensing device of this embodiment due to the multi-layer structure.

Description of drawings

FIG. 1A is a schematic top view of a sensing device according to a first embodiment of the present invention.

Fig. 1B is a schematic cross-sectional view of the sensing device according to the section line A1-A1' of Fig. 1A.

FIG. 2A is a schematic top view of a sensing device according to a second embodiment of the present invention.

Fig. 2B is a schematic cross-sectional view of the sensing device according to the section line A2-A2' of Fig. 2A.

FIG. 3A is a schematic top view of a sensing device according to a third embodiment of the present invention.

Fig. 3B is a schematic cross-sectional view of the sensing device according to the section line A3-A3' of Fig. 3A.

FIG. 4A is a schematic top view of a sensing device according to a fourth embodiment of the present invention.

Fig. 4B is a schematic cross-sectional view of the sensing device according to the section line A4-A4' of Fig. 4A.

FIG. 5A is a schematic top view of a sensing device according to a fifth embodiment of the present invention.

Fig. 5B is a schematic cross-sectional view of the sensing device according to the section line A5-A5' of Fig. 5A.

FIG. 6 is a schematic cross-sectional view of an electronic device according to an embodiment of the present invention.

Explanation of reference signs:

10: Electronic device

100, 200, 300, 400, 500: sensing device

1000: display panel

e1: first direction

e2: second direction

n: normal direction

A1-A1', A2-A2', A3-A3', A4-A4', A5-A5': broken line

BM1, BM2, BM3: Blackout patterns

BP1, BP2: Inorganic layer

CH: semiconductor layer

D: Drain

DL: read line

F: finger

FG: frame glue

FL: filter layer

G: grid

GL: Insulation layer between gates

L1: Lighting beam

L2: Sensing beam

LE: light-emitting structure

LR1, LR2, LR3: light passing regions

ML: microlens

O, OP1, OP2, OP3: Open

PL1, PL2, PL3, PL4, PL5: organic layer

S: source

SB: Substrate

SC: Sensing element

SC1: first electrode

SC2: photosensitive layer

SC3: Second electrode

SE: Sensing structure layer

SL: scan line

SU: Sensing Unit

T: active component

Detailed ways

FIG. 1A is a schematic top view of a sensing device according to a first embodiment of the present invention. Fig. 1B is a schematic cross-sectional view of the sensing device according to the section line A1-A1' of Fig. 1A.

Please refer to FIG. 1A and FIG. 1B at the same time. The sensing device 100 of this embodiment includes a substrate SB, a sensing structure layer SE, an organic layer PL2, a light-shielding pattern BM1, an organic layer PL3, a light-shielding pattern BM2, a filter layer FL, an organic layer PL4, an organic layer PL5, a light shielding pattern BM3, and a plurality of microlenses ML.

In some embodiments, the substrate SB may be a flexible substrate or a rigid substrate. In some embodiments, the sensing structure layer SE may include the following components, but it should be noted that the present invention is not limited thereto. The sensing structure layer SE may, for example, include a plurality of sensing units SU, scan lines SL and read lines DL. In addition, the sensing structure layer SE may also include wirings such as power supply lines (not shown), and the present invention is not limited thereto. It is worth mentioning that, for example, a buffer layer (not shown) may be disposed between the substrate SB and the sensing structure layer SE. The material of the buffer layer may be silicon oxide, silicon nitride, or a stacked layer of at least two of the above materials, and the present invention is not limited thereto.

In some embodiments, each of the plurality of sensing units SU includes an active element T and a sensing element SC, but the invention is not limited thereto. The active device T is located on the substrate SB, for example, and includes a gate G, a semiconductor layer CH, a source S and a drain D. As shown in FIG. The gate G is, for example, disposed corresponding to the semiconductor layer CH, and an inter-gate insulating layer GL is disposed therebetween. The source S and the drain D are disposed on the inter-gate insulating layer GL and are partially in contact with the semiconductor layer CH. The scanning line SL and the reading line DL are also arranged on the substrate SB, for example, wherein the scanning line SL is electrically connected to the source S of the active device T, and the reading line DL is electrically connected to the drain D of the active device T, so that The signal sensed by the sensing element SC is read. In this embodiment, the scan lines SL extend along the first direction e1, the read lines DL extend along the second direction e2, and the first direction e1 and the second direction e2 intersect with each other. The scan lines SL and the read lines DL belong to different film layers, for example. In detail, in some embodiments, the scan line SL and the gate G belong to the same film layer (the first metal layer), and the read line DL belongs to the same film layer (the second metal layer) as the source S and the drain D. ). The method for forming the first metal layer is given below as an example, but it should be noted that the present invention is not limited thereto. First, a first metal material layer (not shown) can be formed on the substrate SB comprehensively by physical vapor deposition or metal chemical vapor deposition. Next, a patterned photoresist material layer (not shown) is formed on the first metal material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the first metal material layer to form the scan line SL and the gate G. In this embodiment, the active element T is any bottom gate thin film transistor known to those skilled in the art. However, although the present embodiment takes the bottom-gate thin film transistor as an example, the present invention is not limited thereto. In other embodiments, the active device T may also be a top-gate thin film transistor or other suitable types of thin film transistors.

The sensing element SC is also located on the substrate SB, for example, and includes a first electrode SC1 , a photosensitive layer SC2 and a second electrode SC3 . The first electrode SC1 , the photosensitive layer SC2 and the second electrode SC3 are sequentially stacked on the substrate SB in this order, for example. In some embodiments, the area of the second electrode SC3 is larger than the area of the photosensitive layer SC2, and the contours of the first electrode SC1 and the second electrode SC3 may partially overlap. In this embodiment, the first electrode SC1 and the reading line DL, the source S and the drain D belong to the same film layer (second metal layer), but the present invention is not limited thereto. In other embodiments, the first electrode SC1 may be formed by another metal layer (third metal layer). In some embodiments, the first electrode SC1 and the second electrode SC3 may include a light-transmitting conductive material or a light-impermeable conductive material, which depends on the application of the sensing device 100 . In this embodiment, the sensing device 100 can be used as an under-screen fingerprint sensor. Therefore, light from the outside (such as light reflected by a fingerprint) will pass through the second electrode SC3 and enter the photosensitive layer SC2, based on Here, the second electrode SC3 is made of light-transmitting conductive material. The photosensitive layer SC2 has the characteristic of converting light energy into electrical energy, so as to realize the function of optical sensing. In some embodiments, the material of the photosensitive layer SC2 may include silicon-rich material, which may be silicon-rich oxide, silicon-rich nitride, silicon-rich oxynitride, silicon-rich carbide, silicon-rich oxycarbide, hydrogenated silicon-rich Oxide, hydrogenated silicon-rich nitride, hydrogenated silicon-rich carbide, or other suitable materials or combinations thereof.

In some embodiments, the sensing structure layer SE further includes an organic layer PL1. The organic layer PL1 is located on the active device T and the first electrode SC1 of the sensing device SC and covers the active device T, for example. In some embodiments, the organic layer PL1 has an opening O exposing the first electrode SC1 of the sensing element SC, wherein the photosensitive layer SC2 is located in the opening O and contacts the first electrode SC1, and the second electrode SC3 is disposed on the organic layer PL1 and In contact with the photosensitive layer SC2. The method of forming the organic layer PL1 is, for example, a spin coating method. The material of the organic layer PL1 is, for example, an organic insulating material, which may be polyimide, polyester, benzocyclobutene (BCB), polymethylmethacrylate (PMMA), polyvinylphenol (poly( 4-vinylphenol), PVP), polyvinyl alcohol (polyvinyl alcohol, PVA), polytetrafluoroethylene (polytetrafluoroethene, PTFE), hexamethyldisiloxane (hexamethyldisiloxane, HMDSO) or stacked layers of at least two of the above materials, But the present invention is not limited thereto. In this embodiment, the organic layer PL1 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL1 may be a multi-layer structure.

For example, the organic layer PL2 is located on the organic layer PL1 of the sensing structure layer SE and covers the second electrode SC3 of the sensing element SC, wherein the organic layer PL2 has a first opening OP1. The method of forming the organic layer PL2 is, for example, a spin coating method. The material of the organic layer PL2 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyl Disiloxane or a stacked layer of at least two of the above materials, but the present invention is not limited thereto. In this embodiment, the organic layer PL2 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL2 may be a multi-layer structure. The plurality of first openings OP1 of the organic layer PL2 corresponds to, for example, a part of the scanning line SL, a part of the reading line DL or a combination thereof. In this embodiment, the first opening OP1 corresponds to a part of the area where the reading line DL is disposed, that is, the extending direction of the first opening OP1 is substantially parallel to the extending direction (the second direction e2 ) of the reading line DL.

In some embodiments, the sensing device 100 of this embodiment may further include an inorganic layer BP1. The inorganic layer BP1 is, for example, located on the organic layer PL2 and covers the top surface and sidewalls of the organic layer PL2 . In detail, a part of the inorganic layer BP1 is disposed on the top surface of the organic layer PL2, and another part of the inorganic layer BP1 is conformally disposed in the first opening OP1 to cover the sidewall and part of the organic layer PL2. Organic layer PL1. The method of forming the inorganic layer BP1 is, for example, a physical vapor deposition method or a chemical vapor deposition method. In this embodiment, the material of the inorganic layer BP1 can be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials, but the invention is not limited thereto. In this embodiment, the inorganic layer BP1 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the inorganic layer BP1 may be a multi-layer structure.

The light-shielding pattern BM1 is, for example, located on the organic layer PL2 and is used to define the light passing region LR1 . Specifically, the material of the light-shielding pattern BM1 includes light-shielding and/or reflective materials, which can be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, nitrogen oxides of the aforementioned materials, or other suitable light-shielding and/or reflective materials. / or reflective material. In some embodiments, the material of the light-shielding pattern BM1 may be molybdenum, molybdenum oxide or a stacked layer thereof. Based on this, the area not provided with the light-shielding pattern BM1 can define the light passing area LR1. In addition, the inorganic layer BP1 can be disposed on the organic layer PL2 so that the light-shielding pattern BM1 is disposed on the inorganic layer BP1, as shown in this embodiment, but it should be noted that the present invention is not limited thereto. In some other embodiments, if the light-shielding pattern BM1 is selected, it can also be directly bonded to the organic layer PL2 , or the inorganic layer BP1 may not be provided. The setting of the light-shielding pattern BM1 can effectively prevent stray light from entering the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing results. In this embodiment, the light passing region LR1 is provided correspondingly to the sensing element SC of the sensing unit SU, so that the sensing element SC can convert the light passing through the light passing region LR1 into a corresponding electrical signal. In addition, in some embodiments, the area provided with the light-shielding pattern BM1 can be used to shield the active element T of the sensing unit SU (not shown in the drawings). In detail, the light-shielding pattern BM1 can be located above the active device T and at least shield the semiconductor layer CH of the active device T, so as to prevent the semiconductor layer CH from being irradiated by light from the outside, thereby avoiding the leakage of the active device T. The method of forming the light-shielding pattern BM1 is, for example, to first form a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form the light-shielding pattern BM1. In addition, the light-shielding pattern BM1 of this embodiment is also disposed in the first opening OP1, which can shield light from a large angle (such as oblique light) from the outside and avoid light leakage. Based on this, when the sensing device 100 of this embodiment is used, for example, as an under-display fingerprint sensor, it can avoid stray light interference caused by oblique light to the sensing unit SU, thereby improving the signal-to-noise ratio of the light to obtain a better Clear fingerprint images. In addition, it also avoids the sensed image distortion.

The organic layer PL3 is, for example, located on the inorganic layer BP1 and covers the light-shielding pattern BM1. The method of forming the organic layer PL3 is, for example, to first form an organic pattern material layer (not shown) by a spin coating method. Next, a patterned photoresist material layer (not shown) is formed on the organic pattern material layer. Afterwards, an etching process is performed on the organic pattern material layer by using the patterned photoresist layer as a mask. The material of the organic layer PL3 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyl Disiloxane or a stacked layer of at least two of the above materials, but the present invention is not limited thereto. In this embodiment, the organic layer PL3 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL3 may be a multi-layer structure. In this embodiment, the organic layer PL3 includes a plurality of second openings OP2. For example, the second opening OP2 corresponds to a part of the scanning line SL, a part of the reading line DL or a combination thereof. In this embodiment, the second opening OP2 corresponds to a part of the area where the reading line DL is disposed, that is, the extending direction of the second opening OP2 is substantially parallel to the extending direction (the second direction e2 ) of the reading line DL. In addition, in some embodiments, the overlapping ratio of the projections of the second opening OP2 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In this embodiment, the projections of the second opening OP2 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB do not overlap at all. Based on the setting relationship between the second opening OP2 and the first opening OP1, the projections of the second opening OP2 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB will be misaligned with each other, that is, the second opening OP1 OP2 and the first opening OP1 respectively correspond to the adjacent reading lines DL. Based on this, in this embodiment, by setting the organic layer PL3 with the second opening OP2 and making the second opening OP2 and the first opening OP1 have the above-mentioned setting relationship, the stress of the original unpatterned organic layer can be reduced, thereby achieving the stress scattered effect.

In some embodiments, the sensing device 100 of this embodiment may further include an inorganic layer BP2. The inorganic layer BP2 is, for example, located on the organic layer PL3 and covers the top surface and sidewalls of the organic layer PL3 . In detail, a part of the inorganic layer BP2 is disposed on the top surface of the organic layer PL3, and another part of the inorganic layer BP2 is conformally disposed in the second opening OP2 to cover the sidewall and part of the organic layer PL3. Blackout pattern BM1. The method of forming the inorganic layer BP2 is, for example, physical vapor deposition or chemical vapor deposition. In some embodiments, the material of the inorganic layer BP2 can be silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above materials. In this embodiment, the material of the inorganic layer BP2 is silicon nitride. In this embodiment, the inorganic layer BP2 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the inorganic layer BP2 may be a multi-layer structure.

The light-shielding pattern BM2 is, for example, located on the organic layer PL3 and is used to define the light passing region LR2 . Specifically, the material of the light-shielding pattern BM2 includes light-shielding and/or reflective materials, which can be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, nitrogen oxides of the aforementioned materials, or other suitable light-shielding and/or reflective materials. / or reflective material. In some embodiments, the material of the light-shielding pattern BM2 may be molybdenum, molybdenum oxide or a stacked layer thereof. Based on this, the area not provided with the light-shielding pattern BM2 can define the light passing area LR2. In addition, the inorganic layer BP2 can be disposed on the organic layer PL3 so that the light-shielding pattern BM2 is disposed on the inorganic layer BP2, as shown in this embodiment, but it should be noted that the present invention is not limited thereto. In other embodiments, if the light-shielding pattern BM2 is selected, it can also be directly attached to the organic layer PL3, and the inorganic layer BP2 may not be provided. The setting of the light-shielding pattern BM2 can effectively prevent stray light from entering the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing results. In this embodiment, the light passing region LR2 is set corresponding to the light passing region LR1, that is, it is set corresponding to the sensing element SC of the sensing unit SU, so that the sensing element SC can pass through the light passing region LR2 and Light passing through the outside of the region LR1 is converted into a corresponding electrical signal. The method of forming the light-shielding pattern BM2 is, for example, to first form a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form the light-shielding pattern BM2.

For example, the filter layer FL is located on the inorganic layer BP2 and covers the light-shielding pattern BM2, but the invention is not limited thereto. In this embodiment, the filter layer FL is also disposed in the second opening OP2. In some embodiments, the filter layer FL can provide a technical effect of light filtering. In detail, in this embodiment, the filter layer FL may be an infrared cut (IR-cut) filter layer. That is, when the sensing unit SU of this embodiment converts the visible light from the outside into an electrical signal, it usually converts the infrared light invisible to the naked eye into an electrical signal, so that when the electrical signal is converted into an image display, the display The output image is susceptible to distortion or dispersion due to infrared light. Based on this, this embodiment can avoid this problem by disposing the filter layer FL. However, the present invention is not limited thereto. When the sensing unit SU of this embodiment converts infrared light from the outside into electrical signals, the filter layer FL of this embodiment can be an infrared ray (IR pass) filter. light layer. In addition, in other embodiments, the filter layer FL may also be other types of filter layers, so as to have an anti-counterfeit effect.

The organic layer PL4 is located on the filter layer FL, for example. The method of forming the organic layer PL4 is, for example, a spin coating method. The material of the organic layer PL4 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyl Disiloxane or a stacked layer of at least two of the above materials, but the present invention is not limited thereto. In this embodiment, the organic layer PL4 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL4 may be a multi-layer structure. In other embodiments, the organic layer PL4 may also have an opening, wherein the opening of the organic layer PL4 is also arranged in a misalignment with the projection of the second opening OP2 of the lower layer on the substrate SB along the normal direction n of the substrate SB, thereby To achieve the effect of stress dispersion.

The organic layer PL5 is located on the organic layer PL4, for example. The method of forming the organic layer PL5 is, for example, a spin coating method. The material of the organic layer PL5 is, for example, an organic insulating material, which can be polyimide, polyester, benzocyclobutene, polymethyl methacrylate, polyvinyl phenol, polyvinyl alcohol, polytetrafluoroethylene, hexamethyl Disiloxane or a stacked layer of at least two of the above materials, but the present invention is not limited thereto. In this embodiment, the organic layer PL5 has a single-layer structure, but the invention is not limited thereto. In other embodiments, the organic layer PL5 may be a multi-layer structure. In some embodiments, an inorganic layer (not shown) may be disposed between the organic layer PL5 and the organic layer PL4 , but the invention is not limited thereto.

The light-shielding pattern BM3 is located on the organic layer PL5, for example, and is used to define the light passing region LR3. Specifically, the material of the light-shielding pattern BM3 includes light-shielding and/or reflective materials, which can be metals, alloys, nitrides of the aforementioned materials, oxides of the aforementioned materials, nitrogen oxides of the aforementioned materials, or other suitable light-shielding and/or reflective materials. / or reflective material. In some embodiments, the material of the light-shielding pattern BM3 may be molybdenum, molybdenum oxide or a stacked layer thereof. Based on this, the area not provided with the light-shielding pattern BM3 can define the light passing area LR3. In addition, an inorganic layer may be additionally disposed on the organic layer PL5 so that the light-shielding pattern BM3 is disposed on the inorganic layer, and the present invention is not limited thereto. The light-shielding pattern BM3 may also be directly attached to the organic layer PL5. The arrangement of the light-shielding pattern BM3 can effectively prevent stray light from entering the plurality of sensing units SU, so as to prevent the stray light from affecting the sensing results. In this embodiment, the light passing region LR3 is set corresponding to the light passing region LR2, that is, it is set corresponding to the sensing element SC of the sensing unit SU, so that the sensing element SC can pass the light passing through the region LR3, The light passing through the region LR2 and the outside light passing through the region LR1 are converted into corresponding electrical signals. The method of forming the light-shielding pattern BM3 is, for example, to first form a light-shielding pattern material layer (not shown) by sputtering or other methods. Next, a patterned photoresist material layer (not shown) is formed on the light-shielding pattern material layer. Afterwards, using the patterned photoresist layer as a mask, an etching process is performed on the light-shielding pattern material layer to form the light-shielding pattern BM3. In some embodiments, an inorganic layer (not shown) may be disposed between the light-shielding pattern BM3 and the organic layer PL5 , but the invention is not limited thereto.

A plurality of microlenses ML are positioned on the organic layer PL5 and disposed in the third light passing region LR3, for example. In detail, a plurality of microlenses ML are located in the third light passing region LR3 defined by the light-shielding pattern BM3, and are disposed corresponding to the plurality of sensing units SU. For example, a plurality of microlenses ML are arranged in an array and have a central axis (not shown) passing through their centers. In some embodiments, the first opening OP1 and the second opening OP2 also have a central axis (not shown) passing through their centers, wherein the central axis of each microlens ML can be aligned with the first opening OP1 and the second opening OP2 The central axis of one of them is aligned, but the present invention is not limited thereto. Based on this, a plurality of microlenses ML can be used to further improve the effect of light collimation, so as to reduce the problems of light leakage and light mixing caused by scattered light or refracted light. In some embodiments, the plurality of microlenses ML may be symmetric lenticular lenses, asymmetric lenticular lenses, plano-convex lenses or meniscus lenses, and the invention is not limited thereto. In addition, each one or more of the plurality of microlenses ML is set corresponding to one sensing unit SU, but the present invention is not limited thereto.

Based on the above, in this embodiment, at least two organic layers are provided with a plurality of openings, and the overlapping ratio of the projections of the openings of adjacent organic layers on the substrate along the normal direction of the substrate is less than 10%, thereby reducing The original unpatterned multi-layer organic layer stress is used to achieve the effect of stress dispersion, thereby avoiding the problem of warping of the sensing device of this embodiment due to the multi-layer structure. Furthermore, in this embodiment, a light-shielding pattern is also provided in the above-mentioned opening, so as to shield light from a large angle (such as oblique light) from the outside and avoid light leakage, and improve the signal-to-noise ratio of light to obtain Sharper images.

FIG. 2A is a schematic top view of a sensing device according to a second embodiment of the present invention. Fig. 2B is a schematic cross-sectional view of the sensing device according to the section line A2-A2' of Fig. 2A. . It must be noted here that the embodiments shown in FIG. 2A and FIG. 2B respectively follow the component numbers and parts of the embodiment in FIG. 1A and FIG. 1B , wherein the same or similar symbols are used to represent the same or similar components, and Descriptions of the same technical contents are omitted. For the description of the omitted parts, refer to the descriptions and effects of the foregoing embodiments, and the following embodiments will not be repeated, but for at least part of the descriptions that are not omitted in the embodiments shown in FIG. 2A and FIG. 2B , refer to the subsequent content.

Please refer to FIG. 2A and FIG. 2B at the same time. The main difference between the sensing device 200 of this embodiment and the sensing device 100 of the previous embodiment is that the organic layer PL4 in the sensing device 200 of this embodiment also includes a plurality of third Open OP3. The third opening OP3 also corresponds to, for example, a part of the scan line SL, a part of the read line DL or a combination thereof. In this embodiment, the third opening OP3 corresponds to a part of the area where the reading line DL is disposed, that is, the extending direction of the third opening OP3 is substantially parallel to the extending direction (the second direction e2 ) of the reading line DL. In addition, in some embodiments, the overlapping ratio of the projections of the third opening OP3 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In this embodiment, the projections of the third opening OP3 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB do not overlap at all. In addition, the third opening OP3 corresponds to the first opening OP1, for example. In some embodiments, projections of the third opening OP3 and the first opening OP1 on the substrate SB along the normal direction n of the substrate SB may overlap with each other. Based on the arrangement relationship between the first opening OP1, the second opening OP2 and the third opening OP3, the projections of the third opening OP3 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB will be misaligned with each other, That is, the third opening OP3 and the second opening OP2 respectively correspond to adjacent reading lines DL, and the third opening OP3 and the first opening OP1 respectively correspond to the same reading line DL.

Based on this, in this embodiment, the stress of the original unpatterned organic layer can be further reduced by additionally providing the organic layer PL4 with the third opening OP3 and having the above-mentioned arrangement relationship between the second opening OP2 and the third opening OP3. In this way, the effect of stress dispersion is achieved.

FIG. 3A is a schematic top view of a sensing device according to a third embodiment of the present invention. Fig. 3B is a schematic cross-sectional view of the sensing device according to the section line A3-A3' of Fig. 3A. It must be noted here that the embodiments shown in FIG. 3A and FIG. 3B respectively follow the component numbers and parts of the embodiment in FIG. 1A and FIG. 1B , wherein the same or similar symbols are used to represent the same or similar components, and Descriptions of the same technical contents are omitted. For the description of the omitted part, refer to the description and effects of the above-mentioned embodiments, and the following embodiments will not be repeated, and the description of at least a part of the embodiments shown in FIG. 3A and FIG. 3B that are not omitted can refer to the subsequent content.

Please refer to FIG. 3A and FIG. 3B at the same time. The main difference between the sensing device 300 of this embodiment and the sensing device 100 of the previous embodiment lies in the first opening OP1 of the organic layer PL2 in the sensing device 300 of this embodiment. Corresponding to the area where part of the scan lines SL are located, that is, the extension direction of the first opening OP1 is substantially parallel to the extension direction of the scan line SL (the first direction e1 ). In addition, the second opening OP2 of the organic layer PL3 also corresponds to a part of the area where the scanning line SL is disposed, that is, the extending direction of the second opening OP2 is substantially parallel to the extending direction (the first direction e1 ) of the scanning line SL. In addition, in some embodiments, the overlapping ratio of the projections of the first opening OP1 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In this embodiment, projections of the first opening OP1 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB do not overlap at all. Based on the arrangement relationship between the first opening OP1 and the second opening OP2, the projections of the first opening OP1 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB will be misaligned with each other, that is, the first opening OP1 and the second opening OP2 respectively correspond to adjacent scan lines SL.

In addition, in this embodiment, each of the plurality of microlenses ML corresponds to three sensing elements SC, but it should be noted that the present invention is not limited thereto. In other embodiments, each of the plurality of microlenses ML Each may correspond to other numbers of sensing elements SC.

Based on this, in this embodiment, the first opening OP1 and the second opening OP2 respectively correspond to the adjacent scan lines SL, which can also reduce the stress of the organic layer not previously patterned, thereby achieving the effect of stress dispersion.

FIG. 4A is a schematic top view of a sensing device according to a fourth embodiment of the present invention. Fig. 4B is a schematic cross-sectional view of the sensing device according to the section line A4-A4' of Fig. 4A. It must be noted here that the embodiments shown in FIG. 4A and FIG. 4B respectively follow the component numbers and parts of the embodiment in FIG. 1A and FIG. 1B , wherein the same or similar symbols are used to represent the same or similar components, and Descriptions of the same technical contents are omitted. For the description of the omitted part, refer to the description and effects of the above-mentioned embodiments, and the following embodiments will not be repeated, and the description of at least a part of the embodiments shown in FIG. 3A and FIG. 3B that are not omitted can refer to the subsequent content.

Please refer to FIG. 4A and FIG. 4B at the same time. The main difference between the sensing device 400 of this embodiment and the sensing device 100 of the previous embodiment lies in the first opening OP1 of the organic layer PL2 in the sensing device 400 of this embodiment. It includes a first vertical opening OP11 and a first horizontal opening OP12, and the second opening OP2 of the organic layer PL3 includes a second vertical opening OP21 and a second horizontal opening OP22. The first vertical opening OP11 and the second vertical opening OP21, for example, correspond to the area where a part of the reading line DL is arranged, that is, the extending direction of the first vertical opening OP11 and the second vertical opening OP21 is the same as the extending direction of the reading line DL (the first The two directions e2) are substantially parallel. For example, the first horizontal opening OP12 and the second horizontal opening OP22 correspond to the area where a part of the scanning line SL is arranged, that is, the extending direction of the first horizontal opening OP12 and the second horizontal opening OP22 is the same as the extending direction of the scanning line SL (the first direction). e1) are substantially parallel. In addition, in some embodiments, the overlapping ratio of the projections of the first vertical opening OP11 and the second vertical opening OP21 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In this embodiment, the projections of the first vertical opening OP11 and the second vertical opening OP21 on the substrate SB along the normal direction n of the substrate SB do not overlap at all. Based on the arrangement relationship between the above-mentioned first vertical opening OP11 and the second vertical opening OP21, the projections of the first vertical opening OP11 and the second vertical opening OP21 on the substrate SB along the normal direction n of the substrate SB will be misaligned with each other, that is, , the first vertical opening OP11 and the second vertical opening OP21 respectively correspond to adjacent reading lines DL. In addition, in some embodiments, the overlapping ratio of the projections of the first lateral opening OP12 and the second lateral opening OP22 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In this embodiment, the projections of the first lateral opening OP12 and the second lateral opening OP22 on the substrate SB along the normal direction n of the substrate SB do not overlap at all. Based on the arrangement relationship between the above-mentioned first transverse opening OP12 and the second transverse opening OP22, the projections of the first transverse opening OP12 and the second transverse opening OP22 on the substrate SB along the normal direction n of the substrate SB will be misaligned with each other, that is, , the first horizontal opening OP12 and the second horizontal opening OP22 respectively correspond to adjacent scan lines SL.

Based on this, in this embodiment, the first opening OP1 including the first vertical opening OP11 and the first horizontal opening OP12 and the second opening OP2 including the second vertical opening OP21 and the second horizontal opening OP22 are set, and the first The above arrangement relationship between the opening OP1 and the second opening OP2 can further reduce the stress of the original unpatterned organic layer, thereby achieving the effect of stress dispersion.

FIG. 5A is a schematic top view of a sensing device according to a second embodiment of the present invention. Fig. 5B is a schematic cross-sectional view of the sensing device according to the section line A5-A5' of Fig. 5A. It must be noted here that the embodiments shown in FIG. 5A and FIG. 5B respectively follow the component numbers and parts of the embodiment in FIG. 1A and FIG. 1B , wherein the same or similar symbols are used to represent the same or similar components, and Descriptions of the same technical contents are omitted. For the description of the omitted part, refer to the description and effects of the above-mentioned embodiments, and the following embodiments will not be repeated, and the description of at least a part of the embodiments shown in FIG. 5A and FIG. 5B that are not omitted can refer to the subsequent content.

Please refer to FIG. 5A and FIG. 5B at the same time. The main difference between the sensing device 500 of this embodiment and the sensing device 100 of the previous embodiment is that the organic layer PL4 in the sensing device 500 of this embodiment also includes a plurality of third Open OP3. The third opening OP3 also corresponds to, for example, a part of the scan line SL, a part of the read line DL or a combination thereof. In this embodiment, the third opening OP3 corresponds to a part of the area where the reading line DL is disposed, that is, the extending direction of the third opening OP3 is substantially parallel to the extending direction (the second direction e2 ) of the reading line DL. In addition, in some embodiments, the overlapping ratio of the projections of the third opening OP3 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In addition, the overlapping ratio of the third opening OP3 and the projection of the first opening OP1 on the substrate SB along the normal direction n of the substrate SB is less than 10%. In this embodiment, the third opening OP3 does not overlap with the projections of the first opening OP1 and the second opening OP2 on the substrate SB along the normal direction n of the substrate SB at all. In detail, based on the setting relationship between the first opening OP1, the second opening OP2 and the third opening OP3, the first opening OP1, the second opening OP2 and the third opening OP3 are located on the substrate along the normal direction n of the substrate SB. The projections on the SB will be misaligned with each other in this order, that is, the adjacent projections of the first opening OP1, the second opening OP2 and the third opening OP3 on the substrate SB along the normal direction n of the substrate SB will respectively correspond to the adjacent projections on the substrate SB. The three read lines DL.

Based on this, in this embodiment, by additionally providing the organic layer PL4 with the third opening OP3 and making the first opening OP1, the second opening OP2, and the third opening OP3 have the above-mentioned arrangement relationship, the original unpatterned The stress of the organic layer is thereby achieved to achieve the effect of stress dispersion.

FIG. 6 is a schematic cross-sectional view of an electronic device according to an embodiment of the present invention.

Please refer to FIG. 6 , which shows an electronic device 10 . In some embodiments, the electronic device 10 may be an under-screen fingerprint recognition device, such as a smart phone, a tablet computer, a notebook computer, or a touch-sensitive display device. The electronic device 10 of this embodiment includes, for example, a display panel 1000 and a sensing device 100 , wherein the display panel 1000 and the sensing device 100 can be bonded by a frame glue FG, and the present invention is not limited thereto. The display panel 1000 is, for example, adapted to provide the illumination beam L1 to the finger F through the light emitting structure LE, and then reflect the sensing beam L2 therefrom. In this embodiment, the display panel 1000 is an organic light-emitting diode (OLED) display panel, but the present invention is not limited thereto. In other embodiments, the display panel 1000 can also be a liquid crystal display panel or other suitable display panels. The sensing device 100 is, for example, disposed under the display panel 1000 to receive the sensing light beam L2 reflected by the finger F, thereby performing fingerprint identification.

In summary, in the sensing device of the present invention, at least two organic layers are provided with a plurality of openings, and the overlapping ratio of the projections of the openings of adjacent organic layers on the substrate along the normal direction of the substrate is less than 10%. , so as to reduce the stress of the multi-layer organic layers that have not been patterned originally, so as to achieve the effect of stress dispersion, thereby avoiding the problem of warping of the sensing device of this embodiment due to the multi-layer structure. Furthermore, in this embodiment, a light-shielding pattern is also provided in the above-mentioned opening, so as to shield light from a large angle (such as oblique light) from the outside and avoid light leakage, and improve the signal-to-noise ratio of light to obtain Sharper images.

Claims (11)

1. A sensing device, comprising:

the sensing structure layer is positioned on the substrate and comprises a plurality of sensing units, a scanning line and a reading line;

a first organic layer located on the sensing structure layer and having a first opening;

a first light blocking pattern on the first organic layer and defining a first light passing area corresponding to the sensing elements of the plurality of sensing units;

a second organic layer located on the first light-shielding pattern and having a second opening, wherein an overlapping rate of a projection of the second opening and the first opening on the substrate along a normal direction of the substrate is less than 10%;

a second light-shielding pattern on the second organic layer and defining a second light-passing area corresponding to the first light-passing area;

a third organic layer on the second light-shielding pattern;

a third light blocking pattern on the third organic layer and defining a third light passing area corresponding to the second light passing area; and

a plurality of microlenses located in the third light passing region.

2. The sensing device of claim 1, further comprising:

a filter layer on the second light-shielding pattern and formed in the second opening; and

and the fourth organic layer is positioned on the filter layer and is arranged between the second organic layer and the third organic layer.

3. The sensing device of claim 2, wherein the fourth organic layer has a third opening, the third opening corresponds to the first opening, and an overlap ratio of a projection of the third opening and the second opening on the substrate along a normal direction of the substrate is less than 10%.

4. The sensing device of claim 2, wherein the fourth organic layer has a third opening, and an overlap ratio of a projection of the third opening and the first opening on the substrate along a normal direction of the substrate is less than 10%, and an overlap ratio of a projection of the third opening and the second opening on the substrate along the normal direction of the substrate is less than 10%.

5. The sensing device as claimed in claim 1, wherein an extending direction of the first opening and an extending direction of the second opening are substantially parallel to an extending direction of the read line, and the first opening and the second opening each correspond to an adjacent read line.

6. The sensing device as claimed in claim 3, wherein an extending direction of the first opening, an extending direction of the second opening and an extending direction of the third opening are substantially parallel to an extending direction of the read line, the first opening and the second opening each corresponding to an adjacent read line.

7. The sensing device as claimed in claim 1, wherein an extending direction of the first opening and an extending direction of the second opening are substantially parallel to an extending direction of the scan line, and the first opening and the second opening each correspond to an adjacent scan line.

8. The sensing device of claim 1, wherein the first opening comprises a first longitudinal opening and a first lateral opening and the second opening comprises a second longitudinal opening and a second lateral opening, wherein

The extending direction of the first longitudinal opening and the extending direction of the second longitudinal opening are substantially parallel to the extending direction of the reading line, and the first longitudinal opening and the second longitudinal opening respectively correspond to the adjacent reading line,

the extending direction of the first transverse opening and the extending direction of the second transverse opening are substantially parallel to the extending direction of the scanning lines, and the first transverse opening and the second transverse opening respectively correspond to the adjacent scanning lines.

9. The sensing device as claimed in claim 4, wherein an extending direction of the first opening, an extending direction of the second opening and an extending direction of the third opening are substantially parallel to an extending direction of the readout lines, and adjacent projections of the first opening, the second opening and the third opening on the substrate along a normal direction of the substrate respectively correspond to adjacent three of the readout lines.

10. The sensing device of claim 1, further comprising:

a first inorganic layer between the first organic layer and the second organic layer, wherein the first light blocking pattern is disposed on the first inorganic layer; and

a second inorganic layer between the second organic layer and the third organic layer, wherein the second light-shielding pattern is disposed on the second inorganic layer.

11. The sensing device as claimed in claim 1, wherein each of the plurality of sensing units comprises an active element and the sensing element, the active element being electrically connected to the sensing element.

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