CN113411520B - High-time-resolution image sensor structure and driving method - Google Patents

Abstract

The invention relates to an image sensor and a high-speed imaging technology, in particular to a high-time-resolution image sensor structure and a driving method thereof, which are used for solving the technical problems of large system scale, difficult guarantee of optical beam splitting consistency, reduced system sensitivity, large design and processing difficulty of an on-chip storage ultra-high-speed image sensor and high production cost of the conventional high-time-resolution continuous imaging system. The image sensor structure comprises a sensor power supply circuit, a 5T pixel structure image sensor array arranged in a grouping and staggered mode, an exposure driving unit, a reading time sequence driving circuit, a pixel signal column processing circuit and a sensor output circuit. The invention also provides a driving method based on the image sensor structure, which is used for independently exposing, transferring and reading out two groups of pixel groups, and realizes continuous acquisition of a plurality of high-time resolution images in the same sensor image plane.

Description

A high time-resolution image sensor structure and driving method

technical field

The invention relates to an image sensor and high-speed imaging technology, in particular to a high-time-resolution image sensor structure and a driving method.

Background technique

High time-resolution continuous imaging is an important test data acquisition method in modern applied physics research. Verifying the laws of physics has extremely important application value.

Existing high-time-resolution continuous imaging systems usually use the framing imaging technology of optical splitting. Such systems use optical splitting to project the same scene onto multiple sensor image planes, and use multiple imaging channels to achieve continuous multiple framing. Although the acquisition of high time-resolution images can achieve better temporal and spatial resolution, there are problems such as large system scale, difficulty in ensuring the consistency of optical spectroscopy, and decreased sensitivity of the imaging system caused by optical spectroscopy.

In recent years, with the continuous development and progress of image sensor technology, ultra-high-speed image sensors using on-chip storage technology have emerged. Such sensors store the induced charges in the pixels in the sensor chip nearby, and design multiple storage units to achieve High time-resolved continuous imaging performance. However, this type of image sensor requires special processing technology support, which is difficult to design and process, and has a high production cost.

SUMMARY OF THE INVENTION

The purpose of the present invention is to solve the problems of large system scale, difficulty in ensuring optical spectroscopic consistency, and reduced system sensitivity in the existing high time-resolution continuous imaging system using the framing imaging technology, while the ultra-high-speed image sensor technology using on-chip storage has Due to the technical problems of difficult design and processing and high production cost, a high-time-resolution image sensor structure and driving method are proposed. It adopts a 5T pixel structure and does not require special processing technology support. It can be realized based on standard CMOS image sensor technology. Time-sequential acquisition of multiple high-time-resolution images.

In order to achieve the above object, the technical scheme adopted in the present invention is:

A high time-resolution image sensor structure, which is special in that it includes a sensor power supply circuit, an image sensor pixel array composed of a 5T pixel structure, an exposure drive unit connected to the image sensor pixel array, a readout timing drive circuit and a pixel array. Signal column processing circuit, and sensor output circuit;

The sensor power supply circuit is respectively connected with the image sensor pixel array, the exposure driving unit, the readout timing driving circuit, the pixel signal column processing circuit and the sensor output circuit;

The image sensor pixel array includes two staggered first pixel groups and second pixel groups;

The exposure driving unit includes a first exposure driving circuit and a second exposure driving circuit, which are respectively used to drive the corresponding first pixel group and the second pixel group;

The first exposure driving circuit generates a photosensitive area reset control signal PD_RST1, a floating gate reset control signal FD_RST1 and a transfer control signal TX1, which are respectively connected to the 5T pixel structure in the first pixel group; the second exposure driving circuit generates The photosensitive area reset control signal PD_RST2, the floating gate reset control signal FD_RST2 and the transfer control signal TX2 are respectively connected to the 5T pixel structure in the second pixel group;

The readout timing drive circuit generates two groups of pixel readout drive signals Group1_Read and Group2_Read, which are respectively connected to the 5T pixel structures in the corresponding first pixel group and the second pixel group for driving the corresponding first pixel group and the second pixel group. The pixel group outputs the pixel signal to the pixel signal column processing circuit;

The pixel signal column processing circuit is used to read out the pixel signal column by column and amplify the pixel signal;

The sensor output circuit is used for outputting the amplified pixel signal.

Further, the 5T pixel structure includes a pixel photosensitive region PD, a floating gate FD, a photosensitive region reset transistor 1, a transfer gate 2, a floating gate reset transistor 3, a source follower 4 and a pixel selection output transistor 5;

The drains of the photosensitive area reset transistor 1, the floating gate reset transistor 3 and the source follower 4 are all connected to the sensor power supply circuit; the cathode of the pixel photosensitive area PD is connected to the source and transfer of the photosensitive area reset transistor 1 The sources of the gate 2 are all connected, and the anode of the pixel photosensitive area PD is grounded; the floating gate FD is connected in series between the source and the ground of the floating gate reset transistor 3; the drain of the transfer gate 2 is connected to the ground. The source of the floating gate reset tube 3 and the gate of the source follower 4 are connected; the source of the source follower 4 is connected to the source of the pixel selection output tube 5;

The gate of the photosensitive area reset tube 1 is connected to the photosensitive area reset control signal PD_RST1 or PD_RST2; the gate of the floating gate reset tube 3 is connected to the floating gate reset control signal FD_RST1 or FD_RST2; the gate of the transfer gate 2 Connected to the transfer control signal TX1 or TX2;

The gate of the pixel selection output tube 5 is connected to the pixel readout driving signal Group1_Read or Group2_Read; the drain of the pixel selection output tube 5 is the pixel output terminal.

Further, the staggered arrangement is row staggered arrangement, column staggered arrangement or pixel staggered arrangement, and the two groups of pixels can be independently controlled for exposure, transfer and readout.

Further, the pixel transfer times of the first pixel group and the second pixel group are the same.

The present invention also proposes a high-time-resolution image sensor driving method, based on the above-mentioned high-time-resolution image sensor structure, which is special in that it includes the following steps:

Step 1. According to the time resolution required by the high-speed process to be tested, determine the exposure time of the pixel array, and determine the driving timing of the first pixel group and the second pixel group;

Step 2. Drive the image sensor to work according to the driving timing of the first pixel group and the second pixel group:

2.1) Time _T0 : use the photosensitive area reset control signal PD_RST1, the floating gate reset control signal FD_RST1 and the transfer control signal TX1 to perform the first exposure and pixel transfer on the photosensitive area of the first pixel group, and the exposure time is T _EXP1 , The pixel transfer time is T _TRANS1 ; at this time, the second pixel group is in the reset state of the photosensitive area;

2.2) At the moment of T1, the _first pixel group that has completed exposure and transfer enters the photosensitive area reset state, and starts to read out the pixel signal for the first time to the first pixel group, and the readout time is T _READ1 ; at the same time, utilize the photosensitive area to reset The control signal PD_RST2, the floating gate reset control signal FD_RST2 and the transfer control signal TX2 perform the first exposure and pixel transfer on the photosensitive area of the second pixel group, the exposure time is T _EXP2 , and the pixel transfer time is T _TRANS2 ;

2.3) At time T2, the second pixel group completes the first exposure and pixel transfer; the first pixel group photosensitive area is subjected to a second exposure, and the second exposure time is T _EXP1 ';

2.4) At time T3, the first pixel group completes the second exposure; the second exposure is performed on the photosensitive area of the second pixel group;

2.5) At time T4, the first pixel signal readout of the first pixel group is completed, and the second pixel transfer is performed on the first pixel group; at the same time, the first pixel signal readout is performed on the second pixel group, and the readout time is: T _READ2 ;

2.6) At time T5, the first pixel signal readout of the second pixel group is completed; the second pixel group is subjected to the second pixel transfer; at the same time, the second pixel signal readout is performed on the first pixel group;

2.7) At time T6, the second pixel signal readout of the first pixel group is completed; the second pixel signal readout is performed on the second pixel group;

2.8) At time T7, the second pixel signal readout of the second pixel group is completed, and a high temporal resolution imaging process is completed.

Further, T _TRANS1 described in step 2.1) and T _{TRANS2 described} in step 2.2) meet the following requirements:

T _TRANS1 =T _TRANS2 =T _TRANS

Among them, T _TRANS is the pixel transfer time of the pixel array.

Further, in step 1, the exposure time of the pixel array is determined according to the time resolution required by the high-speed process to be measured, specifically: estimating the exposure period T of the high-time-resolution image according to the time resolution required by the high-speed process to be measured. _RES , according to the pixel transfer time T _TRANS , calculate the exposure time T _EXP of the pixel array:

T _EXP =T _RES - T _TRANS .

Further, in order to ensure the quality of the output pixel signal of the image sensor, T _READ1 ≥ 10(T _EXP1 +T _TRANS ) described in step 2.2); T _{READ2 ≧} 10(T _EXP2 +T _TRANS ) described in step 2.5).

Further, in step 2.3), the T _EXP1 ′ is less than T _READ1 .

Further, in step 2.8), the one high time resolution imaging process can obtain four high time resolution images with continuous exposure time.

The beneficial effects of the present invention are:

1) In the high time-resolution image sensor structure of the present invention, the pixel array of the image sensor adopts a pixel array arranged in a staggered grouping. Continuous acquisition of high time-resolution images with good image consistency.

2) In the high time resolution image sensor structure of the present invention, the image sensor pixel array adopts a 5T pixel structure, which can effectively realize the electronic shutter of global exposure, which is convenient for high time resolution exposure control.

3) The high time-resolution image sensor driving method of the present invention adopts the pipeline method to expose, transfer and read out two groups of staggered pixels respectively. The control method is simple, and has the advantages of continuous exposure time and large amount of image acquisition.

4) The high time-resolution image sensor structure of the present invention adopts a staggered array of image sensor pixels, divides the pixel array into a first pixel group and a second pixel group, and adds a set of exposure driving units to realize the first pixel group. and independent exposure control of the second pixel group, the image sensor has a simple structure and low hardware cost.

5) The high time-resolution image sensor structure of the present invention is based on a standard CMOS image sensor technology, does not require special processing technology support, and has a low process cost.

Description of drawings

1 is a schematic diagram of a 5T pixel structure adopted in the high time-resolution image sensor structure of the present invention;

2 is a schematic diagram of a pixel array grouping and row staggered arrangement in the high time-resolution image sensor structure of the present invention;

3 is a schematic diagram of a pixel array grouping and a staggered arrangement of columns in the high time-resolution image sensor structure of the present invention;

4 is a schematic diagram of a pixel array grouping and a staggered arrangement of pixels in the high time-resolution image sensor structure of the present invention;

5 is a schematic diagram of the driving timing of the first pixel group and the second pixel group of the pixel array in the high time-resolution image sensor driving method of the present invention.

Description of reference numbers:

1- photosensitive area reset tube, 2- transfer gate, 3- floating gate reset tube, 4- source follower, 5- pixel selection output tube.

Detailed ways

In order to illustrate the technical solutions of the present invention more clearly, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

Referring to FIG. 1, the image sensor structure of the present invention adopts a 5T pixel structure design, and its structure is shown in FIG. 1, including a pixel photosensitive area PD, a floating gate FD, and 5 transistors, and the 5 transistors are: photosensitive area reset tube. 1. Transfer gate 2, floating gate reset transistor 3, source follower 4 (PIX_SF) and pixel selection output transistor 5 (PIX_SEL). Among them, the photosensitive area reset transistor 1, the floating gate reset transistor 3 and the drain of the source follower 4 are all connected to the power supply V _DD ; the cathode of the pixel photosensitive area PD is connected to the source of the photosensitive area reset transistor 1 and the transfer gate 2 The sources of the pixel photosensitive area PD are connected to the ground; the floating gate FD is connected in series between the source and the ground of the floating gate reset tube 3; the drain of the transfer gate 2 is connected to the floating gate reset tube The source of 3 and the gate of source follower 4 are connected; the source of source follower 4 is connected to the source of pixel selection output tube 5; the gate of photosensitive area reset tube 1 is connected to the photosensitive area reset control signal , the gate of the floating gate reset tube 3 is connected to the floating gate reset control signal, the gate of the transfer gate 2 is connected to the transfer control signal; the gate of the pixel selection output tube 5 is connected to the pixel readout drive signal, and its drain Extremely pixel output.

The pixel photosensitive area PD has an independent reset control signal PD_RST. The pixel transfers the induced charge to the floating gate FD through the transfer gate control signal TX. The floating gate has an independent reset control signal FD_RST, and the floating gate is followed by the source. The transistor PIX_SF and the pixel selection output transistor PIX_SEL output the pixel signal to the pixel readout circuit (the readout part of the 5T pixel structure in the pixel array). The 5T pixel structure can effectively realize the electronic shutter of global exposure, which is convenient for exposure control with high time resolution.

The structure of a high time-resolution image sensor is shown in Figures 2, 3 and 4, including a sensor power supply circuit, an exposure drive unit, a readout timing drive circuit, a pixel signal column processing circuit, a sensor output circuit, and an image sensor pixel array. The sensor power supply circuit is used to supply power to the 5T pixel structure of the image sensor pixel array;

The present invention divides the image sensor pixel array into a first pixel group Group1 and a second pixel group Group2; the exposure driving unit includes two groups of exposure driving circuits, each group of exposure driving circuits generates a photosensitive area reset control signal PD_RST, a floating gate reset control signal Signal FD_RST, transfer control signal TX, when PD_RST, FD_RST, TX are all low level, the 5T pixel structure is exposed, and when TX is turned to high level, the pixel signal is transferred;

The readout timing drive circuit generates a pixel readout drive signal, which is used to control the pixel selection output tube 5 (PIX_SEL) to output the pixel signal to the pixel signal column processing circuit, and the pixel signals of the first pixel group and the second pixel group are read out multiplexed The same signal readout circuit;

The pixel signal column processing circuit is used to read out the pixel signal column by column, amplify the pixel signal, and output the pixel signal through the sensor output circuit.

In the driving method of the high time-resolution image sensor structure of the present invention, two groups of exposure driving circuits, namely, the first exposure driving circuit and the second exposure driving circuit, are respectively used, and the first pixel group and the second pixel group of the image sensor pixel array are respectively Drive control. When the image sensor pixel array is grouped, the basic structure of row staggered, column staggered or pixel staggered arrangement can be used: as shown in Figure 2, it is a schematic diagram of the basic structure of the sensor pixel array grouping control and row staggered arrangement; Figure 3 is the sensor pixel The basic structure of array group control and column staggered arrangement; Figure 4 shows the basic structure of sensor pixel array group control and pixel staggered arrangement. The staggered arrangement of the first pixel group and the second pixel group adopts two sets of independent photosensitive area reset control signals (PD_RST1, PD_RST2), floating gate reset control signals (FD_RST1, FD_RST2) and transfer control signals (TX1, TX2) respectively. Control, two groups of pixels can be independently controlled for exposure, transfer and readout.

In this embodiment, the image sensor driving timing when the staggered sensor pixel array is grouped and controlled is as shown in FIG. 5 , wherein the driving signal of the first exposure driving circuit includes the photosensitive area reset control signal PD_RST1, the floating gate reset The control signal FD_RST1, the transfer control signal TX1; the driving signal of the second exposure driving circuit includes the photosensitive area reset control signal PD_RST2, the floating gate reset control signal FD_RST2, and the transfer control signal TX2; The pixel readout driving signal Group1_Read for group readout, and the pixel readout driving signal Group2_Read for controlling the readout of the second pixel group.

For the high-time-resolution image measurement task of the high-speed process, using the driving sequence shown in Figure 5, the image sensor exposure and image acquisition process specifically includes the following steps:

1) Estimate the required time resolution according to the duration of the high-speed process to be measured, and determine the exposure period T _RES of the high time-resolution image; the transfer times of the first pixel group and the second pixel group are the same, according to the transfer time T _TRANS of the pixels , the exposure time T _EXP of the pixel array can be determined by calculation:

T _EXP = (T _RES - T _TRANS );

2) At time T0, high time-resolution imaging starts. First, the first pixel group is exposed and transferred using PD_RST1, FD_RST1 and TX1. The exposure time is T _EXP1 and the transfer time is T _TRANS . At this time, the second pixel group is in the photosensitive state. Zone reset state, no exposure;

3) At T1 time (T ₀ +T _RES ), when the first pixel group completes exposure and pixel transfer, the first enters the photosensitive area reset state, and starts to read out pixel signals for the first pixel group, and the readout time is T _READ1 ; simultaneously start exposure and pixel transfer to the second pixel group using PD_RST2, FD_RST2 and TX2, the exposure time is T _EXP2 , and the transfer time is T _TRANS ;

4) At time T2 (T ₁ +T _RES ), after the second pixel group completes exposure and pixel transfer, a second exposure is performed on the photosensitive area of the first pixel group, and the second exposure time is T _EXP1 ′;

5) At time T3 (T ₂ +T _RES ), after the second exposure time T _RES of the photosensitive area of the first pixel group, the second exposure of the photosensitive area of the second pixel group is started;

6) At time T4 (T ₁ +T _READ1 ), after the readout of the first pixel group is completed, the second pixel transfer is performed on the first pixel group, and the pixel signal readout for the second pixel group is started. The readout time is: T _READ2 ;

7) At time T5 (T ₄ +T _READ2 ), after the second pixel group is read out, the second pixel group is transferred for the second time, and the second pixel signal readout of the first pixel group is started;

8) At time T6 (T ₅ +T _READ1 ), after the second readout of the first pixel group is completed, the second pixel signal is read out for the second pixel group;

9) At time T7 (T ₆ +T _READ2 ), after the second pixel signal readout of the second pixel group is completed, a high-time-resolution imaging process is completed, and four images can be acquired in one high-time-resolution imaging process.

During the above process:

The relationship between the pixel signal readout times T _READ1 and T _READ2 of the first pixel group and the second pixel group and the exposure times T _EXP1 , T _EXP2 of the pixel array and the transfer time T _TRANS is: T _READ1 ≥ 10(T _EXP1 +T _TRANS ), T _READ2 ≥ 10 (T _EXP2 +T _TRANS ), usually more than 100 times;

At time T2, the second exposure time T _EXP1 ′ of the photosensitive area of the first pixel group is less than the readout time T _READ1 of the first pixel group;

Four high time resolution images with continuous exposure time can be obtained in one high time resolution imaging process.

The above only describes the preferred embodiments of the present invention, and does not limit the technical solutions of the present invention. Any known deformations made by those skilled in the art on the basis of the main technical concept of the present invention belong to the technical category to be protected by the present invention.

Claims (8)

1. A high time resolution image sensor architecture, characterized by: the device comprises a sensor power supply circuit, an image sensor pixel array consisting of a 5T pixel structure, an exposure driving unit connected with the image sensor pixel array, a reading time sequence driving circuit, a pixel signal column processing circuit and a sensor output circuit;

the sensor power supply circuit is respectively connected with the image sensor pixel array, the exposure driving unit, the reading time sequence driving circuit, the pixel signal column processing circuit and the sensor output circuit;

the image sensor pixel array comprises two groups of first pixel groups and second pixel groups which are arranged in a staggered mode;

the exposure driving unit comprises a first exposure driving circuit and a second exposure driving circuit which are respectively used for driving a corresponding first pixel group and a corresponding second pixel group;

the first exposure driving circuit generates a photosensitive region reset control signal PD _ RST1, a floating gate reset control signal FD _ RST1 and a transfer control signal TX1 which are respectively connected with the 5T pixel structures in the first pixel group; the second exposure driving circuit generates a photosensitive region reset control signal PD _ RST2, a floating gate reset control signal FD _ RST2 and a transfer control signal TX2, which are respectively connected with the 5T pixel structures in the second pixel group;

the reading time sequence driving circuit generates two groups of pixel reading driving signals Group1_ Read and Group2_ Read, the two groups of pixel reading driving signals are respectively connected with the 5T pixel structures in the corresponding first pixel Group and the corresponding second pixel Group, and the two groups of pixel reading driving circuits are used for driving the corresponding first pixel Group and the corresponding second pixel Group to output pixel signals to the pixel signal column processing circuit;

the pixel signal column processing circuit is used for reading out pixel signals row by row according to columns and amplifying the pixel signals;

the sensor output circuit is used for outputting the amplified pixel signals.

2. A high time resolution image sensor structure as in claim 1, wherein: the 5T pixel structure comprises a pixel photosensitive region PD, a floating gate FD, a photosensitive region reset tube (1), a transfer gate (2), a floating gate reset tube (3), a source follower (4) and a pixel selection output tube (5);

the drain electrodes of the photosensitive region reset tube (1), the floating grid reset tube (3) and the source electrode follower (4) are all connected with a sensor power supply circuit; the cathode of the pixel photosensitive area PD is connected with the source electrode of the photosensitive area reset tube (1) and the source electrode of the transfer gate (2), and the anode of the pixel photosensitive area PD is grounded; the floating gate FD is connected in series between the source of the floating gate reset tube (3) and the ground; the drain electrode of the transfer gate (2) is connected with the source electrode of the floating gate reset tube (3) and the grid electrode of the source electrode follower (4); the source electrode of the source electrode follower (4) is connected with the source electrode of the pixel selection output tube (5);

the grid electrode of the photosensitive region reset tube (1) is connected with a photosensitive region reset control signal PD _ RST1 or PD _ RST 2; the grid of the floating grid reset tube (3) is connected with a floating grid reset control signal FD _ RST1 or FD _ RST 2; the gate of the transfer gate (2) is connected with a transfer control signal TX1 or TX 2;

the grid electrode of the pixel selection output tube (5) is connected with a pixel reading driving signal Group1_ Read or Group2_ Read; and the drain electrode of the pixel selection output tube (5) is the pixel output end.

3. A high time resolution image sensor structure according to claim 1 or 2, characterized in that: the staggered arrangement is a row staggered arrangement, a column staggered arrangement or a pixel staggered arrangement.

4. A high time resolution image sensor structure as in claim 3, wherein: the pixel transfer time of the first pixel group is the same as that of the second pixel group.

5. A driving method of high time resolution image sensor, based on the structure of claim 1, comprising the following steps:

step 1, determining the exposure time of a pixel array according to the time resolution required by a high-speed process to be detected, and determining the driving time sequence of a first pixel group and a second pixel group;

step 2, driving the image sensor to work according to the driving time sequences of the first pixel group and the second pixel group:

2.1)T ₀ time: the photosensitive region of the first pixel group is exposed for the first time and is transferred for the first time by using a photosensitive region reset control signal PD _ RST1, a floating gate reset control signal FD _ RST1 and a transfer control signal TX1, and the exposure time is T _EXP1 Pixel transfer time of T _TRANS1 (ii) a At the moment, the second pixel group is in a photosensitive area reset state;

2.2)T ₁ at the moment, the first pixel group which finishes exposure and transfer enters a photosensitive area reset state, and the first pixel group starts to read out pixel signals for the first time, wherein the reading time is T _READ1 (ii) a Meanwhile, using the photosensitive region reset control signal PD _ RST2, the floating gate reset control signal FD _ RST2, and the transfer control signal TX2, the pairThe photosensitive area of the second pixel group is subjected to first exposure and pixel transfer for a period of time T _EXP2 Pixel transfer time of T _TRANS2 (ii) a The T is _READ1 ≥10(T _EXP1 +T _TRANS )；

2.3) T2 moment, the second pixel group completes the first exposure and pixel transfer; exposing the photosensitive area of the first pixel group for the second time, wherein the second exposure time is T _EXP1 '; the T is _EXP1 ' less than T _READ1 ；

2.4) at time T3, the first pixel group completes the second exposure; exposing the photosensitive area of the second pixel group for the second time;

2.5) at the time of T4, finishing the first pixel signal reading of the first pixel group, and performing second pixel transfer on the first pixel group; at the same time, the first pixel signal readout is performed for the second pixel group with a readout time T _READ2 (ii) a The T is _READ2 ≥10(T _EXP2 +T _TRANS )；

2.6) at time T5, the first pixel signal reading of the second pixel group is finished; performing a second pixel transfer on the second pixel group; simultaneously, reading out the pixel signals of the first pixel group for the second time;

2.7) at time T6, the second pixel signal reading of the first pixel group is finished; performing a second pixel signal readout on the second pixel group;

and 2.8) T7, finishing the second-time pixel signal reading of the second pixel group, and finishing the high-time resolution imaging process.

6. The method for driving a high time-resolved image sensor of claim 5, wherein T is performed in step 2.1) _TRANS1 And the T in the step 2.2) _TRANS2 The following requirements are met:

T _TRANS1 ＝T _TRANS2 ＝T _TRANS

wherein, T _TRANS The pixel transfer time for the pixel array.

7. A high time resolution image sensor driver according to claim 5 or 6The dynamic method is characterized in that in the step 1, the exposure time of the pixel array is determined according to the time resolution required by the high-speed process to be measured, and the specific steps are as follows: estimating the exposure period T of the high time resolution image according to the time resolution required by the high speed process to be measured _RES According to pixel transfer time T _TRANS Calculating the exposure time T of the pixel array _EXP ：

T _EXP ＝T _RES -T _TRANS 。

8. The method of claim 7, wherein: in step 2.8), four high-time resolution images with continuous exposure time can be obtained in the one-time high-time resolution imaging process.

Images