CN113410176B - OLED devices and manufacturing methods - Google Patents

Abstract

The invention provides an OLED device and a manufacturing method thereof, which can enable the original chip circuit substrate to be directly externally connected with the material of the display part of the OLED device by adding three processes of a conductive contact plug, an anode and a pixel definition layer on the basis of the original structure of the chip circuit substrate for completing the BEOL manufacturing process, so that the finally manufactured device can have an OLED display function, and an OLED display device is obtained. In addition, the structure such as the conductive contact plug, the anode and the pixel defining layer can be directly manufactured on the basis of the original structure of the chip circuit substrate for completing the BEOL manufacturing process, so that the problem that extra space is occupied by bonding wires and a sealing area when the OLED display panel and the chip circuit substrate are electrically connected together by means of a packaging process and the like can be avoided, the size of the finally manufactured OLED device is further reduced, and the OLED micro-display device is particularly suitable for manufacturing OLED micro-displays such as glasses.

Description

OLED devices and manufacturing methods

Technical field

The present invention relates to the technical field of manufacturing OLED devices, and in particular to an OLED device and a manufacturing method thereof.

Background technique

Organic Light Emitting Diode (OLED) microdisplay is a silicon-based display. Due to the excellent electrical properties and extremely small device size of silicon-based devices, a high degree of integration of display IC substrates can be achieved. The manufacturing method of a general OLED microdisplay is generally: first directly prepare the OLED light-emitting unit and other display parts on a silicon substrate to form an OLED display panel, and then pass the front end of line (FEOL) and back-end processes on another substrate. The back end of line (BEOL) process prepares chip circuits for controlling and driving the display part to form a chip circuit substrate. As shown in Figure 1, the chip circuit substrate 100 has a top metal interconnection line 101, a blunt Passivation layer 102 and aluminum pad 103, passivation layer 102 covers the top metal interconnection line 101, the bottom of the aluminum pad 103 is embedded in the passivation layer 102 and contacts the top of part of the top metal interconnection line 101; then Then, the OLED display panel is electrically connected to the drive control chip substrate through film encapsulation, cover sheet encapsulation and other methods to finally produce an OLED microdisplay.

In the above method, on the one hand, the materials of the OLED display part cannot be directly connected to the chip circuit substrate. On the other hand, when the OLED display panel and the chip circuit substrate are electrically connected together by means of packaging processes, the bonding wires and sealing areas It will take up extra space and is not conducive to further reduction of the display size.

Contents of the invention

The object of the present invention is to provide an OLED display device and its manufacturing method, which can directly connect the OLED display part material to the drive control chip substrate after the structure of the drive control chip substrate is completed, so that the area of the final formed display device is smaller. .

In order to solve the above technical problems, the present invention provides a manufacturing method of an OLED device, including:

Provide a chip circuit substrate that has completed the back-end process, and the chip circuit substrate has a plurality of top metal interconnect lines;

Form an insulating covering layer to cover the chip circuit substrate, and etch the insulating covering layer to expose the corresponding surface of the top metal interconnect line to form a contact hole;

Forming conductive contact plugs in the contact holes;

Forming a plurality of mutually independent anodes on a portion of the surface of the insulating covering layer, and the bottom of each of the anodes is in electrical contact with the top of the corresponding conductive contact plug;

Forming a patterned pixel defining layer on the surface of each of the anodes and the surrounding insulating covering layer, the pixel defining layer having a pixel opening on the upper surface of each of the anodes;

An organic light-emitting layer is formed to fill each of the pixel openings, and a cathode is formed to at least cover the organic light-emitting layer to form an OLED light-emitting element on the chip circuit substrate.

Optionally, the chip circuit substrate further has a passivation layer, the passivation layer covers the upper surface of each of the top metal interconnect lines and has at least one opening, and each of the openings exposes the corresponding top layer. A partial area of the metal interconnection line, and a pad is formed in each of the openings.

Optionally, after forming the patterned pixel defining layer and before forming the organic light-emitting layer, the method further includes: opening the insulating covering layer above the bonding pad through a photolithography and etching process to expose the the upper surface of the pad.

Optionally, the step of forming the insulating covering layer with the contact hole on the chip circuit substrate includes:

Form a dielectric covering layer on the surface of the passivation layer and the bonding pad, and bury the bonding pad;

Perform top planarization on the dielectric covering layer so that the dielectric covering layer has a flat upper surface;

A hard mask covering layer and a photoresist layer having a contact hole pattern are sequentially formed on the surface of the dielectric covering layer. The contact holes defined by the contact hole pattern correspond to partial areas of the top metal interconnection lines. alignment;

Using the photoresist layer as a mask, the insulating covering layer is etched to expose the corresponding surface of the top metal interconnection line to form the contact hole.

Optionally, the step of forming the conductive contact plug in the contact hole includes:

Depositing conductive material on the surface of the insulating covering layer and the contact hole, the deposited conductive material can at least fill the contact hole;

The deposited conductive material is chemically and mechanically polished until an upper surface of the insulating covering layer is exposed to form the conductive contact plug filled in the contact hole.

Optionally, the step of forming a plurality of anodes on the surface of the insulating covering layer includes:

Forming an anode material layer covering the surface of the insulating covering layer and the conductive contact plug;

Forming a photoresist layer with an anode pattern on the anode material layer;

Using the photoresist layer as a mask, the anode material layer is etched to form a plurality of anodes located above each conductive contact plug and separated from each other.

Optionally, the step of forming the patterned pixel defining layer includes:

Forming a pixel defining layer covering the surface of the insulating covering layer and each of the anodes;

Forming a photoresist layer having a pixel defining pattern on the pixel defining layer;

Using the photoresist layer as a mask, the pixel defining layer is etched to remove excess of the pixel defining layer and form corresponding pixel openings on the upper surface of each anode.

Optionally, the contact hole is an annular contact hole, the conductive contact plug is an annular plug, and the area surrounded by the conductive contact plug is made of light-transmitting and non-conductive material.

Based on the same inventive concept, the present invention also provides an OLED device, including:

A chip circuit substrate that has completed the back-end process, and the chip circuit substrate has a plurality of top metal interconnect lines;

An insulating covering layer covering the chip circuit substrate and having contact holes exposing part of the upper surface of the corresponding top metal interconnect line;

Conductive contact plugs filled in the contact holes;

A plurality of mutually independent anodes are formed on part of the surface of the insulating covering layer, and the bottom of each of the anodes is in contact with the top of the corresponding conductive contact plug;

A patterned pixel defining layer formed on the surface of each of the anodes and the surrounding insulating covering layer, the pixel defining layer having a pixel opening on the upper surface of each of the anodes;

An organic light-emitting layer filled in each of the pixel openings; and,

The cathode at least covers the organic light-emitting layer.

Optionally, in the OLED device, the chip circuit substrate also has a passivation layer, the passivation layer covers the upper surface of each of the top metal interconnect lines and has at least one opening, each of the openings Partial areas of the corresponding top metal interconnect lines are exposed, and pads are formed in each of the openings; the insulating covering layer also has openings that expose the upper surfaces of the pads.

Optionally, in the OLED device, the insulating covering layer includes a dielectric covering layer and a hard mask covering layer sequentially stacked on the passivation layer, and the dielectric covering layer covers the passivation layer. and on the surface of the pad and has a flat upper surface.

Optionally, in the OLED device, the contact hole is an annular contact hole, the conductive contact plug is an annular plug, and the area surrounded by the conductive contact plug is made of light-transmitting and non-conductive material.

Compared with the existing technology, the technical solution of the present invention has the following beneficial effects:

1. On the basis of the original structure of the chip circuit substrate that has completed the BEOL process, by adding three processes of conductive contact plugs, anodes and pixel definition layers, the original chip circuit substrate can be directly connected to the display part of the OLED device materials, so that the final device can have OLED display function, that is, an OLED display device is obtained.

2. Because structures such as conductive contact plugs, anodes, and pixel definition layers can be produced directly based on the original structure of the chip circuit substrate that has completed the BEOL process, it is possible to avoid the need to use packaging processes to separate the OLED display panel from the chip circuit substrate. The problem that the bonding wires and sealant areas will take up extra space when electrically connected together is conducive to further reducing the size of the final OLED device, which is especially suitable for the production requirements of OLED micro-displays such as glasses.

3. Since the corresponding anode and the top metal interconnection line are directly electrically connected through the conductive contact plug filled in the contact hole, it is conducive to further reducing the thickness of the final OLED device, which is especially suitable for ultra-high-end devices. Fabrication requirements for thin OLED microdisplays.

4. The conductive contact plug is an annular plug, and the area surrounded by the conductive contact plug is made of light-transmitting and non-conductive material, so that more light emitted by the formed OLED device can pass through the through the area surrounded by the conductive contact plugs to improve the light extraction efficiency of the formed OLED device.

Description of the drawings

Figure 1 is a schematic cross-sectional structural diagram of an existing chip circuit substrate that has completed the BEOL process;

Figure 2 is a flow chart of a manufacturing method of an OLED device according to a specific embodiment of the present invention;

3A to 3I are schematic cross-sectional structural diagrams of the device in the manufacturing method of the OLED device according to specific embodiments of the present invention.

Detailed ways

The technical solution proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use imprecise proportions, and are only used to conveniently and clearly assist in explaining the embodiments of the present invention.

Please refer to Figure 2. One embodiment of the present invention provides a manufacturing method for an OLED device, including:

S1: Provide a chip circuit substrate that has completed the back-end process, and the chip circuit substrate has a plurality of top metal interconnect lines;

S2, form an insulating covering layer to cover the chip circuit substrate, and etch the insulating covering layer to expose the corresponding surface of the top metal interconnection line to form contact holes;

S3, forming a conductive contact plug in the contact hole;

S4, form a plurality of mutually separated anodes on part of the surface of the insulating covering layer, and the bottom of each anode is in electrical contact with the top of the corresponding conductive contact plug;

S5, forming a patterned pixel defining layer on the surface of each of the anodes and the surrounding insulating covering layer, the pixel defining layer having a pixel opening on the upper surface of each of the anodes;

S6, open the insulating covering layer above the bonding pad through photolithography and etching processes to expose the upper surface of the bonding pad;

S7: Form an organic light-emitting layer to fill each of the pixel openings, and form a cathode to at least cover the organic light-emitting layer.

Please refer to FIG. 3A. In step S1, a chip circuit substrate that has completed the front-end process (FEOL) and the back-end process (BEOL) is provided. The front-end process mainly involves a semiconductor substrate (not shown, such as silicon wafer). Electronic components (not shown) such as transistors, diodes, resistors, capacitors, and inductors are made on the circle). The specific process of forming transistors includes: first, dividing and preparing transistors on the semiconductor substrate through a shallow trench isolation process device area (active area), and then convert the corresponding device area into an N-type area and a P-type area through an ion implantation process, and then make a gate on the corresponding device area through a gate-first process or a gate-last process. The source and drain of each transistor are then formed through an ion implantation process. The back-end process is mainly used for wiring to achieve corresponding electrical connections between different electronic components and lead out the pads. The specific process includes: interlayer dielectric layer deposition, tungsten plug molding, and Damascus copper interconnect inlay (single damascene or dual damascene) and other processes to form several layers of metal interconnection lines, and different layers of metal interconnection lines are connected by conductive plugs filled in the through holes; after forming the top metal interconnection lines 301a and 301b, A passivation layer 302 is formed on the top metal interconnection lines 301a, 301b and the interlayer dielectric layer 300 to protect the top metal interconnection lines 301a, 301b and other device structures, wherein the top metal interconnection line 301a is used for subsequent Electrically connected to the anode of the formed OLED light-emitting element, the top metal interconnection line 301b is subsequently used to lead out the pad 303; the passivation layer 302 is then etched to form at least one portion that exposes the corresponding top metal interconnection line 301b. openings (not shown) on the surface; after that, bonding pads 303 are formed in each opening through processes such as deposition of metals such as aluminum, etching, or ball planting.

Please refer to Figure 3A and Figure 3B. In step S2, first, a deposition process (such as various CVD, various PVD or ALD, etc.) can be used to cover the surface of the passivation layer 302 and the pad 303 with the dielectric coating layer 304, The material of the dielectric covering layer 304 includes, for example, silicon oxide, silicon nitride, silicon oxynitride, oxide formed of ethyl ethyl silicate (TEOS), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), dielectric constant K Low-K dielectric materials below 3.9, organic insulating materials (eg, acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.), other suitable dielectric materials, or combinations thereof. Exemplarily, low-K dielectric materials include fluorosilicate glass (FSG), carbon-doped silicon oxide, polyimide, and the like, and combinations thereof. The thickness of the dielectric cap layer 304 is thick enough to completely bury the pad 303 and subsequently provide a flat top surface without exposing the upper surface of the pad 303 . Then, the top of the dielectric covering layer 304 is planarized through a chemical mechanical polishing (CMP) process until the thickness and top surface flatness of the dielectric covering layer 304 meet the requirements, so that the dielectric covering layer 304 has a flat upper surface, and The pad 303 is buried inside and provides a flat process platform for subsequent processes. Next, a deposition process (such as various chemical vapor deposition CVD processes, various physical vapor deposition PVD processes or atomic layer vapor deposition ALD processes, etc.) is used to cover the hard mask cover layer 305 on the dielectric cover layer 304, and further pass through Processes such as spin coating cover the photoresist layer 306 on the hard mask covering layer 305. The material of the hard mask covering layer 305 includes, for example, at least one of silicon oxide, silicon nitride, and silicon oxynitride. Then, through a series of photolithography processes such as exposure and development, the photoresist layer 306 is patterned to form a contact hole pattern in the photoresist layer 306. The contact holes defined by the contact hole pattern are consistent with the corresponding contact holes. Partial areas of the top metal interconnect lines 301a are aligned. After that, using the photoresist layer 306 with the contact hole pattern as a mask, the hard mask covering layer 305, the dielectric covering layer 304 and the passivation layer 302 are sequentially etched until the corresponding top metal interconnection line 301a is exposed. part of the upper surface to form a contact hole 307. Finally, the photoresist layer 306 is removed.

It should be noted that in this embodiment, the material selection of each layer and each structure of the chip circuit substrate needs to meet the performance requirements of the OLED device, especially the reflectivity must match the light extraction performance of the OLED device.

The top metal interconnection line 301a is set according to the adaptability of the pixel array of the OLED device. On the one hand, the top metal interconnection line 301a can be used to connect the subsequently formed OLED light-emitting elements (ie, light-emitting diodes) with the corresponding transistors and other electronic components in the chip circuit substrate. On the other hand, the electrically connected lines can also serve as a reflective layer to reflect the light emitted by the OLED light-emitting element transmitted thereto, thereby improving the light extraction efficiency of the OLED device. In addition, the contact hole pattern in the photoresist layer 306 is annular, so an annular contact hole (i.e., a solid pillar surrounded by a trench) will be formed in the area of the top metal interconnect line 301a corresponding to each subsequent anode. , so that the subsequently formed conductive contact plug is a ring plug, which on the one hand can ensure reliable electrical connection between the anode of the subsequently formed OLED light-emitting element (ie, light-emitting diode) and the corresponding top-level metal interconnection line 301a On the other hand, it can reduce the blocking of the light emitted by the OLED device by the conductive contact plug, so that the corresponding light can pass through the internal area surrounded by the conductive contact plug, thereby ultimately improving the performance of the formed OLED device. Light extraction efficiency. In other embodiments of the present invention, in order to reduce the difficulty of etching the contact hole 307 and avoid the photoresist layer 306 from generating polymer residues during the etching of the dielectric cover layer 304 and the passivation layer 302 to affect the formed contact. The shape of the hole 307 improves the reliability of transferring the contact hole pattern to the lower layer. You can first transfer the contact hole pattern in the photoresist layer 306 to the hard mask covering layer 305, and then remove the photoresist layer 306 before continuing. Using the hard mask covering layer 305 as a mask, the dielectric covering layer 304 and the passivation layer 302 are etched until part of the upper surface of the corresponding top metal interconnection line 301a is exposed to form a contact hole 307.

Please refer to FIG. 3C. In step S3, first, ALD, CVD, PVD, electroplating, chemical plating, or any other suitable process or combination can be used to fill the contact holes 307 with conductive material until each contact hole 307 is filled. And when a deposition process such as ALD, CVD, PVD, etc. is used to fill the contact hole 307 with conductive material, the deposited conductive material also covers the surface of the hard mask covering layer 305, and the deposited conductive material can at least fill the contact. Hole 307, furthermore, the conductive material used to fill contact hole 307 may include, but is not limited to, tungsten, cobalt, copper, aluminum, polysilicon, doped silicon, silicide, or any combination thereof. Then, the deposited conductive material may be chemically mechanically polished until the upper surface of the hard mask covering layer 305 is exposed to form the conductive contact plug 308 filled in the contact hole 307 . The bottom of each conductive contact plug 308 is in electrical contact with the top of the corresponding top metal interconnect line 301a.

Please refer to FIG. 3D and FIG. 3E. In step S4, first, ALD, CVD, PVD or any other suitable process may be used to cover the surface of the hard mask covering layer 305 and the conductive contact plug 308. The anode material layer 309 is further coated with a photoresist layer 310 on the surface of the anode material layer 309. The material of the anode material layer 309 can be metal materials such as aluminum, copper, silver, or indium tin oxide (Indium tin oxide). Tin Oxide (ITO), indium zinc oxide (Indium Zinc Oxide, IZO) and other transparent conductive materials, but are not limited to these materials. The anode material layer 309 can be a single-layer film structure or a multi-layer film stack structure. Then, with the anode mask of the OLED light-emitting element (light-emitting diode), the photoresist layer 310 is exposed, developed and other photolithography processes to form an anode pattern in the photoresist layer 310, with each anode pattern aligned accordingly. conductive contact plug 308. Next, using the photoresist layer 310 as a mask, the anode material layer 309 is etched until the surface of the hard mask covering layer 305 is exposed, so as to form a plurality of separate conductive contact plugs 308 located above each other. Anode 309a. Afterwards, the photoresist layer 310 can be removed using a conventional dry or wet glue removal process. It can be seen that the arrangement of the conductive contact plug 308 and the top metal interconnection line 301a needs to be designed based on the anode arrangement of the OLED light emitting element (light emitting diode), or in other words, the conductive contact plug 308 and the top metal interconnection line 301a The arrangement needs to be designed based on the arrangement of the OLED pixel array. It should be noted that in other embodiments of the present invention, in order to simplify the process, a lift-off process can also be used to make the anode 309a. The specific process is: coating the hard mask covering layer 305 with photoresist. After coating, exposure, and development, use a photoresist film with a certain pattern as a mask to evaporate the anode material required for glue evaporation. Then, while removing the photoresist film, remove the excess anode material on the photoresist film. After peeling off, only the anode 309a remains on the hard mask overlay 305. Obviously, no matter what process is used to form the anode 309a, the bottom of the anode 309a is higher than the top of the pad 303, so that the chip circuit substrate can be directly connected to the OLED material. In addition, since the anode 309a is directly connected to the top metal interconnection line 301a through the vertical conductive contact plug 308, the distance is short, which is beneficial to the production of ultra-thin OLED devices.

Please refer to Figures 3F and 3G. In step S5, first, ALD, CVD, PVD or any other suitable process may be used to cover the pixel definition layer on the surface of the hard mask covering layer 305 and each of the anodes 309a. (Pixeldefining layer, PDL) 311, and further coat a photoresist layer 312 on the surface of the pixel defining layer 311, where the material of the pixel defining layer 311 may be silicon oxide, silicon nitride, silicon oxynitride, etc., but is not limited to these materials. Then, with the help of the pixel defining layer mask of the OLED device, the photoresist layer 312 is subjected to photolithography processes such as exposure and development to form a pixel defining pattern in the photoresist layer 312. The pixel defining pattern can be used to define each element. subpixel position. Next, using the photoresist layer 312 with the pixel defining pattern as a mask, the pixel defining layer is etched to expose the surface of the hard mask covering layer 305 to remove excess of the pixel defining layer. And a corresponding pixel opening 311b is formed on the upper surface of each anode 309a. Each pixel opening 311b is used to subsequently define the position of a corresponding sub-pixel. The remaining pixel definition layer 311a divides the sidewalls of each anode 309a, the top area of each anode 309a except the pixel opening 311b and the corresponding The area between adjacent anodes 309a is covered to ensure the spacing and insulation isolation performance between subsequently formed pixels, and the remaining pixel definition layer 311a also exposes the surface of the hard mask layer 305 in the area where the pad 303 is located. . Afterwards, the photoresist layer 312 is removed.

Please refer to FIG. 3H and FIG. 3I. In step S6, first, a photoresist layer 313 is coated on the surface of the hard mask covering layer 305, the pixel definition layer 311a and the anode 309a, and the photoresist layer 313 is Exposure, development and other photolithography processes are performed to mask the pixel definition layer 311a and the anode 309a, and expose the area where the bonding pad 303 is located. Then, using the photoresist layer 313 as a mask, the hard mask covering layer 304 and the dielectric covering layer 305 above the bonding pad 303 are etched, and the bonding pad 303 is etched to a certain extent to form an exposed bonding pad 303 At this time, the bonding pad 303 is in the shape of a groove, thereby increasing the connection between the bonding pad 303 and the corresponding electrical structure subsequently formed in the opening 314 (such as the cathode of an OLED light-emitting element or a welding lead, etc.) The contact area enhances the reliability of the outward connection of the pad 303. The photoresist layer 313 is then removed to re-expose the pixel defining layer 311a, the pixel opening 311b and the anode 309a.

Please continue to refer to Figure 3I. In step S7, first, use appropriate process technology such as evaporation or inkjet printing to form an organic light-emitting layer (not shown) in the corresponding pixel opening 311b. The organic light-emitting layer can also be provided On the upper surface of the pixel definition layer 311a, but the organic light emitting layer does not cover the opening 314 above the pad 303. The organic light-emitting layer may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The structure of the organic light-emitting layer can be changed into various shapes generally known to those skilled in the art. Next, any suitable process such as ALD, CVD, PVD, electroplating, etc. may be used to cover the surfaces of the hard mask covering layer 305, the organic light emitting layer and the pixel defining layer 311a with a cathode material layer (not shown), and A photoresist layer (not shown) is further coated on the surface of the cathode material layer. The material of the cathode material layer can be metal materials such as aluminum, copper, silver, or indium tin oxide (ITO). ), indium zinc oxide (Indium Zinc Oxide, IZO) and other transparent conductive materials, but are not limited to these materials. The cathode material layer can be a single-layer film structure or a multi-layer film stack structure. Then, with the help of the cathode mask of the OLED light-emitting element (light-emitting diode), the photoresist layer is exposed, developed and other photolithography processes to form a cathode pattern in the photoresist layer, and each cathode pattern is aligned with the corresponding anode. 309a. Next, using the photoresist layer as a mask, the cathode material layer is etched to remove excess cathode material layer, and a cathode (not shown) corresponding to each anode 309a is formed on the surface of the organic light-emitting layer. . Afterwards, the photoresist layer with the cathode pattern can be removed using a conventional dry or wet glue removal process. At this time, the stacked structure between each anode 309a and the upper cathode constitutes a corresponding OLED light-emitting element. In this step, a part of the remaining cathode material layer can be filled in the opening 314, so that the bottom of the formed cathode is in contact with the top of the pad 303. At this time, the corresponding electronic components in the chip circuit substrate can pass through the top layer The metal interconnection line 301b and the pad 303 are connected to the cathode. That is to say, at this time, not only a part of the circuit in the chip circuit substrate can be used to drive and control the anode of the OLED light-emitting element, but also another part of the circuit can be used to drive and control the anode of the OLED light-emitting element. By controlling the cathode of the OLED light-emitting element, the chip circuit substrate can ultimately control and drive the OLED light-emitting element to emit light. In addition, since the bonding pad 303 is in a groove shape, the contact area between the cathode and the bonding pad 303 is increased, thereby improving the reliability of the electrical connection between the chip circuit substrate and the OLED light-emitting element.

Based on the same inventive concept, please refer to Figures 3A to 3I. This embodiment also provides an OLED device manufactured using the above-mentioned OLED device manufacturing method, including: a chip circuit substrate that has completed the back-end process, an insulating covering layer, and a conductive contact plug. plug 308, a plurality of mutually separated anodes 309a, a patterned pixel defining layer 311a, an organic light emitting layer (not shown) and a cathode.

Among them, the chip circuit substrate has completed the front-end process (FEOL) and the back-end process (BEOL). It has electronic components such as transistors, diodes, resistors, capacitors, inductors, and also has an interlayer dielectric layer 300 and an interlayer dielectric layer formed between the layers. Several layers of metal interconnection lines in the dielectric layer 300, of which the top metal interconnection line has at least two types: the top metal interconnection line 301a and the top metal interconnection line 301b. The top metal interconnection line 301a is used to connect to the corresponding anode. , the top metal interconnection line 301b is used to lead out the pad 303. The chip circuit substrate also has a passivation layer 302, which covers the upper surface of each of the top metal interconnect lines 301a, 301b and has openings for forming pads 303, and each of the openings is exposed A partial area of the corresponding top metal interconnection line 301b is exposed, and a pad 303 is formed in each of the openings.

The insulating covering layer includes a dielectric covering layer 304 and a hard mask covering layer 305 that are stacked on the passivation layer 302 in sequence, and the dielectric covering layer 304 covers the surfaces of the passivation layer 302 and the pad 303 and has a flat upper surface, the insulating covering layer has contact holes 307 penetrating the dielectric covering layer 304 and the hard mask covering layer 305 and exposing part of the upper surface of the corresponding top metal interconnect line 301a and penetrating the dielectric The covering layer 304 and the hard mask cover the layer 305 and expose the opening 314 on the upper surface of the pad 303 .

The conductive contact plug 308 is filled in the contact hole 307. The conductive contact plug 308 is an annular plug, and the area surrounded by the annular shape is the non-conductive dielectric covering layer 304 and the hard mask covering layer 305.

A plurality of anodes 309a are formed on a portion of the surface of the hard mask covering layer 305 and are separated from each other, and the bottom of each anode 309a is in contact with the top of the corresponding conductive contact plug 308.

A patterned pixel defining layer 311a is formed on the surface of each of the anodes 309a and the surrounding hard mask cover layer 305, the pixel defining layer 311a having a pixel opening 311b on the upper surface of each of the anodes 309a. The pixel definition layer 311a also exposes the area where the pad 303 is located.

The organic light-emitting layer is filled in each of the pixel openings 311b, and the cathode at least covers the organic light-emitting layer. The stacked structure between each anode 309a and the upper cathode constitutes a corresponding OLED light-emitting element.

Optionally, the cathode is also filled in the opening 314 of the insulating covering layer above the pad 303. At this time, not only a part of the circuit in the chip circuit substrate can be used to drive and control the anode of the OLED light-emitting element, but also another part of the circuit can The cathode is used to drive and control the OLED light-emitting element, so that the chip circuit substrate can ultimately control and drive the OLED light-emitting element to emit light. In addition, since the bonding pad 303 is in a groove shape, the contact area between the cathode and the bonding pad 303 is increased, thereby improving the reliability of the electrical connection between the chip circuit substrate and the OLED light-emitting element.

In this embodiment, the selection of materials for each structure may refer to the description in the above-mentioned manufacturing method of the OLED device, and will not be described again here.

In summary, the OLED device and its manufacturing method of the present invention can be based on the original structure of the chip circuit substrate that completes the BEOL process by adding three processes of conductive contact plugs, anodes and pixel definition layers to make the original structure Some chip circuit substrates can be directly connected to the display part of the OLED device, so that the final device can have an OLED display function, that is, an OLED display device is obtained. In addition, because structures such as conductive contact plugs, anodes, and pixel definition layers can be produced directly based on the original structure of the chip circuit substrate that has completed the BEOL process, it is possible to avoid the need to use packaging processes to separate the OLED display panel from the chip circuit substrate. The problem that the bonding wires and the sealing area will take up extra space when electrically connected together is conducive to further reducing the size of the final OLED device, which is especially suitable for the production of OLED micro-displays such as glasses.

The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention in any way. Any changes or modifications made by those of ordinary skill in the field of the present invention based on the above disclosure shall fall within the scope of the claims.

Claims (12)

1. A method of manufacturing an OLED device, comprising:

providing a chip circuit substrate for finishing a back-end process, wherein the chip circuit substrate is provided with a plurality of top-layer metal interconnection lines;

forming an insulating cover layer to cover the chip circuit substrate, and etching the insulating cover layer to expose the surface of the corresponding top metal interconnection line so as to form a contact hole;

forming a conductive contact plug in the contact hole;

forming a plurality of mutually separated anodes on part of the surface of the insulating cover layer, wherein the bottom of each anode is in electrical contact with the top of the corresponding conductive contact plug;

forming a patterned pixel defining layer on the surface of each of the anodes and the surrounding insulating cover layer, the pixel defining layer having a pixel opening on the upper surface of each of the anodes;

and forming an organic light-emitting layer filled in each pixel opening, and forming a cathode corresponding to each anode on the surface of the organic light-emitting layer to form an OLED light-emitting element on the chip circuit substrate.

2. The method of manufacturing an OLED device as claimed in claim 1, wherein the chip circuit substrate further has a passivation layer covering an upper surface of each of the top metal interconnection lines and having at least one opening, each of the openings exposing a partial region of the corresponding top metal interconnection line, and a pad is formed in each of the openings.

3. The method of manufacturing an OLED device of claim 2, further comprising, after forming the patterned pixel defining layer and before forming the organic light emitting layer: and opening the insulating cover layer above the bonding pad through photoetching and etching processes to expose the upper surface of the bonding pad.

4. The method of manufacturing an OLED device of claim 2, wherein the step of forming the insulating cover layer having the contact holes on the chip circuit substrate includes:

forming a dielectric cover layer on the passivation layer and the surface of the bonding pad, and burying the bonding pad;

top planarizing the dielectric cap layer such that the dielectric cap layer has a planar upper surface;

sequentially forming a hard mask covering layer and a photoresist layer with a contact hole pattern on the surface of the dielectric covering layer, wherein the contact hole defined by the contact hole pattern is aligned with a partial region of the corresponding top-layer metal interconnection line;

and etching the insulating cover layer by taking the photoresist layer as a mask until the surface of the corresponding top-layer metal interconnection line is exposed, so as to form the contact hole.

5. The method of manufacturing an OLED device of claim 1, wherein the step of forming the conductive contact plug in the contact hole includes:

depositing a conductive material on the surfaces of the insulating cover layer and the contact hole, wherein the deposited conductive material at least can fill the contact hole;

and carrying out chemical mechanical polishing on the deposited conductive material until the upper surface of the insulating cover layer is exposed so as to form the conductive contact plug filled in the contact hole.

6. The method of manufacturing an OLED device of claim 1, wherein the step of forming a plurality of said anodes on the surface of said insulating cover layer includes:

forming an anode material layer to cover the surfaces of the insulating cover layer and the conductive contact plug;

forming a photoresist layer with an anode pattern on the anode material layer;

and etching the anode material layer by taking the photoresist layer as a mask to form a plurality of anodes which are positioned above each conductive contact plug and are separated from each other.

7. The method of manufacturing an OLED device of claim 1, wherein the step of forming the patterned pixel defining layer includes:

forming a pixel defining layer to cover the insulating cover layer and the surface of each anode;

forming a photoresist layer with a pixel defining pattern on the pixel defining layer;

and etching the pixel defining layer by taking the photoresist layer as a mask to remove redundant pixel defining layers and forming corresponding pixel openings on the upper surface of each anode.

8. The method of manufacturing an OLED device as claimed in any one of claims 1-7, wherein the contact hole is an annular contact hole, the conductive contact plug is an annular plug, and an area surrounded by the conductive contact plug is a light-transmitting and non-conductive material.

9. An OLED device, comprising:

the chip circuit substrate is provided with a plurality of top metal interconnection lines;

the insulating cover layer covers the chip circuit substrate and is provided with a contact hole exposing part of the upper surface of the corresponding top metal interconnection line;

a conductive contact plug filled in the contact hole;

a plurality of mutually separated anodes formed on a part of the surface of the insulating cover layer, and the bottom of each anode is in contact with the top of a corresponding conductive contact plug;

a patterned pixel defining layer formed on a surface of each of the anodes and an insulating cover layer therearound, the pixel defining layer having a pixel opening on an upper surface of each of the anodes;

an organic light emitting layer filled in each of the pixel openings; the method comprises the steps of,

and cathodes formed on the surface of the organic light emitting layer and corresponding to the respective anodes.

10. The OLED device of claim 9, wherein said chip circuit substrate further has a passivation layer covering an upper surface of each of said top metal interconnect lines and having at least one opening, each of said openings exposing a portion of a corresponding region of said top metal interconnect line, and each of said openings having a bond pad formed therein; the insulating cover layer also has an opening exposing an upper surface of the pad.

11. The OLED device of claim 10, wherein the insulating capping layer includes a dielectric capping layer and a hard mask capping layer stacked in sequence on the passivation layer, and the dielectric capping layer overlies surfaces of the passivation layer and the pad and has a planar upper surface.

12. The OLED device claimed in any one of claims 9-11, wherein the contact hole is an annular contact hole, the conductive contact plug is an annular plug, and the area surrounded by the conductive contact plug is a light transmissive and non-conductive material.