[go: up one dir, main page]

CN113381084B - Calibration circuit, battery protection chip and calibration method of calibration circuit - Google Patents

Calibration circuit, battery protection chip and calibration method of calibration circuit Download PDF

Info

Publication number
CN113381084B
CN113381084B CN202110572103.5A CN202110572103A CN113381084B CN 113381084 B CN113381084 B CN 113381084B CN 202110572103 A CN202110572103 A CN 202110572103A CN 113381084 B CN113381084 B CN 113381084B
Authority
CN
China
Prior art keywords
resistor
overvoltage
calibration
undervoltage
calibration circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110572103.5A
Other languages
Chinese (zh)
Other versions
CN113381084A (en
Inventor
郑黎明
王宏义
吴建飞
刘培国
余磊
阮郴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National University of Defense Technology
Original Assignee
National University of Defense Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University of Defense Technology filed Critical National University of Defense Technology
Priority to CN202110572103.5A priority Critical patent/CN113381084B/en
Publication of CN113381084A publication Critical patent/CN113381084A/en
Application granted granted Critical
Publication of CN113381084B publication Critical patent/CN113381084B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00Secondary cells; Manufacture thereof
    • H01M10/42Methods or arrangements for servicing or maintenance of secondary cells or secondary half-cells
    • H01M10/425Structural combination with electronic components, e.g. electronic circuits integrated to the outside of the casing
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02HEMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/18Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for batteries; for accumulators
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/0029Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with safety or protection devices or circuits
    • H02J7/00308Overvoltage protection
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

本申请涉及校准电路、电池保护芯片及校准电路的校准方法,该校准电路包括可调电阻Rtrim、电阻分压器、第一选路开关、第二选路开关、过压比较器CP1和欠压比较器CP2,电阻分压器包括依次串联的电阻RA、电阻RB、电阻RC、电阻RD和电阻RE。电阻RA与电阻RB、电阻RB与电阻RC的连接处分别引出过压和过压迟滞抽头并电连接至第一选路开关的两输入端,第一选路开关的输出端电连接过压比较器CP1的正相输入端。电阻RC与电阻RD的、电阻RD与电阻RE的连接处分别引出欠压和欠压迟滞抽头并电连接至第二选路开关的两输入端,第二选路开关的输出端电连接欠压比较器CP2的正相输入端。过压比较器CP1和欠压比较器CP2的反相输入端均用于接入参考电压。显著提了电路综合性能。

Figure 202110572103

The present application relates to a calibration circuit, a battery protection chip and a calibration method for the calibration circuit. The calibration circuit includes an adjustable resistance R trim , a resistance voltage divider, a first routing switch, a second routing switch, an overvoltage comparator CP1 and an undervoltage comparator. The voltage comparator CP2 is provided, and the resistor voltage divider includes a resistor RA , a resistor RB , a resistor RC , a resistor RD and a resistor RE which are connected in series in sequence. Overvoltage and overvoltage hysteresis taps are drawn out from the connection between the resistor RA and the resistor RB and the resistor RB and the resistor RC respectively and are electrically connected to the two input terminals of the first routing switch, and the output terminal of the first routing switch is electrically connected. Connect to the non-inverting input of the overvoltage comparator CP1. Undervoltage and undervoltage hysteresis taps are respectively drawn from the connection between the resistor RC and the resistor RD , and the resistor RD and the resistor RE are electrically connected to the two input terminals of the second routing switch, and the output terminal of the second routing switch. The non-inverting input terminal of the undervoltage comparator CP2 is electrically connected. Both the inverting input terminals of the overvoltage comparator CP1 and the undervoltage comparator CP2 are used to access the reference voltage. Significantly improved the overall performance of the circuit.

Figure 202110572103

Description

校准电路、电池保护芯片及校准电路的校准方法Calibration circuit, battery protection chip and calibration method of calibration circuit

技术领域technical field

本发明属于电池电路技术领域,具体涉及一种校准电路、电池保护芯片及校准电路的校准方法。The invention belongs to the technical field of battery circuits, and particularly relates to a calibration circuit, a battery protection chip and a calibration method for the calibration circuit.

背景技术Background technique

由于锂电池的天然特性,必须配合专用的保护芯片来使用以保证安全性、可用容量和循环使用寿命。锂电池保护芯片一般提供过压、欠压、过流、短路和过热等多项保护,其中过压保护有较高的绝对精度要求,即使是一个仅仅+100mv偏差,也足以造成电池使用寿命缩短、电池过热甚至失火燃烧;而-100mv偏差会可造成电池可用容量的显著损失。Due to the natural characteristics of lithium batteries, they must be used with special protection chips to ensure safety, usable capacity and cycle life. Lithium battery protection chips generally provide multiple protections such as overvoltage, undervoltage, overcurrent, short circuit and overheating. Among them, the overvoltage protection has high absolute accuracy requirements. Even a deviation of +100mv is enough to shorten the battery life. , the battery overheats or even catches fire; the -100mv deviation will cause a significant loss of the battery's usable capacity.

传统的集成电路技术无法在批量生产时直接生产出达到要求的过压精度的保护芯片,通常需要对每一颗保护芯片单独进行校准。由于电池保护芯片一般是大批量成本敏感型芯片,校准所耗费的时间,将直接影响到芯片的产量和成本,有时校准成本可占据芯片总成本的可观比例。因此,一种简单、快速、有效的校准方式对批量生产的电池保护芯片至关重要。传统的电池保护芯片有采用双分压器和单分压器等两种设计方案,可以支持对电池保护芯片的校准。然而,在实现本发明的过程中,发明人发现传统的电池保护芯片仍存在着综合性能不足的技术问题。Traditional integrated circuit technology cannot directly produce protection chips that meet the required overvoltage accuracy during mass production, and it is usually necessary to calibrate each protection chip individually. Since battery protection chips are generally cost-sensitive chips in large quantities, the time spent on calibration will directly affect the output and cost of the chip, and sometimes the calibration cost can account for a considerable proportion of the total chip cost. Therefore, a simple, fast, and effective calibration method is crucial for mass-produced battery protection chips. The traditional battery protection chip has two design schemes, such as double voltage divider and single voltage divider, which can support the calibration of the battery protection chip. However, in the process of realizing the present invention, the inventor found that the traditional battery protection chip still has the technical problem of insufficient comprehensive performance.

发明内容SUMMARY OF THE INVENTION

基于此,有必要针对上述传统的电池保护芯片所存在着的技术问题,提供一种可以显著提高电路综合性能的校准电路、电池保护芯片及校准电路的校准方法。Based on this, it is necessary to provide a calibration circuit, a battery protection chip and a calibration method for the calibration circuit that can significantly improve the overall performance of the circuit, aiming at the technical problems existing in the above-mentioned conventional battery protection chips.

为了实现上述目的,本发明实施例采用以下技术方案:In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:

一方面,本发明实施例提供一种校准电路,包括可调电阻Rtrim、电阻分压器、第一选路开关、第二选路开关、过压比较器CP1和欠压比较器CP2,电阻分压器包括依次串联的电阻RA、电阻RB、电阻RC、电阻RD和电阻REOn the one hand, an embodiment of the present invention provides a calibration circuit, including an adjustable resistor R trim , a resistor divider, a first routing switch, a second routing switch, an overvoltage comparator CP1 and an undervoltage comparator CP2, and the resistor The voltage divider includes a resistor RA , a resistor RB , a resistor RC , a resistor RD , and a resistor RE in series in sequence;

可调电阻Rtrim的一端用于电连接电池单元的正极,可调电阻Rtrim的另一端电连接电阻RA的一端,电阻RE的另一端用于电连接电池单元的负极与地端;One end of the adjustable resistor R trim is used to electrically connect the positive electrode of the battery unit, the other end of the adjustable resistor R trim is electrically connected to one end of the resistor RA, and the other end of the resistor RE is used to electrically connect the negative electrode of the battery unit and the ground;

电阻RA与电阻RB的连接处引出过压抽头并电连接至第一选路开关的一个输入端,电阻RB与电阻RC的连接处引出过压迟滞抽头并电连接至第一选路开关的另一个输入端,第一选路开关的输出端电连接过压比较器CP1的正相输入端;An overvoltage tap is drawn from the connection between the resistor RA and the resistor RB and is electrically connected to an input end of the first routing switch, and an overvoltage hysteresis tap is drawn from the connection between the resistor RB and the resistor RC and is electrically connected to the first selector switch. The other input end of the way switch, the output end of the first way selection switch is electrically connected to the non-inverting input end of the overvoltage comparator CP1;

电阻RC与电阻RD的连接处引出欠压抽头并电连接至第二选路开关的一个输入端,电阻RD与电阻RE的连接处引出欠压迟滞抽头并电连接至第二选路开关的另一个输入端,第二选路开关的输出端电连接欠压比较器CP2的正相输入端;The connection between the resistor R C and the resistor R D leads out an undervoltage tap and is electrically connected to an input end of the second routing switch, and the connection between the resistor R D and the resistor RE leads out an undervoltage hysteresis tap and is electrically connected to the second selector switch. The other input end of the route switch, the output end of the second route selection switch is electrically connected to the non-inverting input end of the undervoltage comparator CP2;

过压比较器CP1和欠压比较器CP2的反相输入端均用于接入参考电压。Both the inverting input terminals of the overvoltage comparator CP1 and the undervoltage comparator CP2 are used to access the reference voltage.

在其中一个实施例中,第一选路开关为二选一多路器Q1,二选一多路器Q1的控制信号输入端用于接入过压迟滞的使能信号;In one embodiment, the first routing switch is a two-to-one multiplexer Q 1 , and the control signal input end of the two-to-one multiplexer Q 1 is used to access an enable signal of overvoltage hysteresis;

过压迟滞的使能信号用于指示二选一多路器Q1将过压迟滞抽头接通至过压比较器CP1。The overvoltage hysteresis enable signal is used to instruct the two-to- one multiplexer Q1 to turn on the overvoltage hysteresis tap to the overvoltage comparator CP1.

在其中一个实施例中,第二选路开关为二选一多路器Q2,二选一多路器Q2的控制信号输入端用于接入欠压迟滞的使能信号;In one of the embodiments, the second routing switch is a two-to-one multiplexer Q 2 , and the control signal input end of the two-to-one multiplexer Q 2 is used to access an enable signal of undervoltage hysteresis;

欠压迟滞的使能信号用于指示二选一多路器Q2将欠压迟滞抽头接通至欠压比较器CP2。The undervoltage hysteresis enable signal is used to instruct the two-to-one multiplexer Q2 to turn on the undervoltage hysteresis tap to the undervoltage comparator CP2.

在其中一个实施例中,可调电阻Rtrim包括串联的32个节段电阻。In one embodiment, the adjustable resistor R trim includes 32 segment resistors connected in series.

在其中一个实施例中,各节段电阻为高阻多晶硅方块电阻。In one embodiment, each segment resistance is a high-resistance polysilicon sheet resistance.

另一方面,还提供一种电池保护芯片,包括芯片本体和上述的校准电路。On the other hand, a battery protection chip is also provided, which includes a chip body and the above-mentioned calibration circuit.

又一方面,还提供一种校准电路的校准方法,用于校准上述的校准电路,上述方法包括以下步骤:In another aspect, a calibration method for a calibration circuit is also provided for calibrating the above-mentioned calibration circuit, and the above-mentioned method includes the following steps:

确定校准电路的设计参数;设计参数包括过压抽头分压比、欠压抽头分压比、过压迟滞抽头分压比、欠压迟滞抽头分压比、可调电阻比值和可调电阻分段数;Determine the design parameters of the calibration circuit; design parameters include overvoltage tap divider ratio, undervoltage tap divider ratio, overvoltage hysteresis tap divider ratio, undervoltage hysteresis tap divider ratio, adjustable resistance ratio, and adjustable resistance segment number;

测量校准电路在未经校准前的过压保护门限值;Measure the overvoltage protection threshold value of the calibration circuit before calibration;

利用二进制校准码公式根据设计参数与过压保护门限值,计算得到校准码;校准码用于校准上述校准电路;Use the binary calibration code formula to calculate the calibration code according to the design parameters and the overvoltage protection threshold value; the calibration code is used to calibrate the above calibration circuit;

采用熔丝编程的方法,将校准码写入校准电路的芯片。Using the method of fuse programming, the calibration code is written into the chip of the calibration circuit.

在其中一个实施例中,二进制校准码公式为:In one embodiment, the binary calibration code formula is:

Figure BDA0003082939880000031
Figure BDA0003082939880000031

其中,VOV_target表示过压保护门限值修调后的目标值,VOV_raw表示未经校准前的过压保护门限值,Xstep表示修调步长。Among them, V OV_target represents the target value of the overvoltage protection threshold value after adjustment, V OV_raw represents the overvoltage protection threshold value before calibration, and X step represents the adjustment step size.

在其中一个实施例中,可调电阻比值通过如下公式确定:In one of the embodiments, the adjustable resistance ratio is determined by the following formula:

Figure BDA0003082939880000032
Figure BDA0003082939880000032

其中,Xmax表示可调电阻的最大阻值,A表示电阻RA的阻值,B表示电阻RB的阻值,Vref_max表示参考电压的最大值,Vref_min表示参考电压的最小值;Among them, X max represents the maximum resistance value of the adjustable resistor, A represents the resistance value of the resistor RA, B represents the resistance value of the resistor RB, V ref_max represents the maximum value of the reference voltage, and V ref_min represents the minimum value of the reference voltage;

可调电阻分段数通过如下公式确定:The number of adjustable resistor segments is determined by the following formula:

Figure BDA0003082939880000041
Figure BDA0003082939880000041

其中,Xstep表示修调步长,A表示电阻RA的阻值,Vref_max表示参考电压的最大值,P表示修调精度。Among them, X step represents the adjustment step length, A represents the resistance value of the resistor RA, V ref_max represents the maximum value of the reference voltage, and P represents the adjustment precision.

在其中一个实施例中,未经校准前的过压保护门限值的有效区域为:In one embodiment, the valid area of the uncalibrated overvoltage protection threshold value is:

Figure BDA0003082939880000042
Figure BDA0003082939880000042

其中,Vref_min表示参考电压的最小值,A表示电阻RA的阻值,B表示电阻RB的阻值,VOV_raw表示未经校准前的过压保护门限值,VOV_target表示过压保护门限值修调后的目标值。Among them, V ref_min represents the minimum value of the reference voltage, A represents the resistance value of the resistor RA, B represents the resistance value of the resistor RB , V OV_raw represents the overvoltage protection threshold value before calibration, and V OV_target represents the overvoltage protection The target value after threshold adjustment.

上述技术方案中的一个技术方案具有如下优点和有益效果:A technical scheme in the above-mentioned technical scheme has the following advantages and beneficial effects:

上述校准电路、电池保护芯片及校准电路的校准方法,通过采用一个可调电阻Rtrim、一个电阻分压器、第一选路开关、第二选路开关、过压比较器CP1和欠压比较器CP2构成的校准电路结构,与传统方案相比,节省了一个分压器,从而为芯片节省了一半的功耗和面积;只需要通过调节一个可调电阻Rtrim就可以同时校准过压门限和欠压门限,修调过程所耗费的时间也会被大幅缩短。此外,本方案中过压比较器CP1和欠压比较器CP2可以使用同样的电路设计,可以复用;参考电压也可以使用常规的设计,不需要设计成可调节的,而且过压/欠压迟滞也可以分开设置而不互相牵制,从而大大降低了电路设计的难度和复杂性,达到了显著提高电池保护芯片电路综合性能的目的。The above-mentioned calibration circuit, battery protection chip and calibration method of the calibration circuit, by adopting an adjustable resistor R trim , a resistor divider, a first routing switch, a second routing switch, an overvoltage comparator CP1 and an undervoltage comparison Compared with the traditional solution, the calibration circuit structure composed of CP2 saves a voltage divider, which saves half of the power consumption and area of the chip; it only needs to adjust an adjustable resistor R trim to calibrate the overvoltage threshold at the same time and undervoltage threshold, the time spent in the trimming process will also be greatly reduced. In addition, the overvoltage comparator CP1 and the undervoltage comparator CP2 in this solution can use the same circuit design and can be reused; the reference voltage can also use a conventional design, it does not need to be designed to be adjustable, and the overvoltage/undervoltage The hysteresis can also be set separately without restraining each other, thereby greatly reducing the difficulty and complexity of circuit design, and achieving the purpose of significantly improving the comprehensive performance of the battery protection chip circuit.

附图说明Description of drawings

为了更清楚地说明本申请实施例或传统技术中的技术方案,下面将对实施例或传统技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application or in the traditional technology, the following briefly introduces the accompanying drawings that are used in the description of the embodiments or the traditional technology. Obviously, the drawings in the following description are only the For some embodiments of the application, for those of ordinary skill in the art, other drawings can also be obtained according to these drawings without any creative effort.

图1为一种传统的校准电路结构示意图;1 is a schematic structural diagram of a traditional calibration circuit;

图2为另一种传统的校准电路结构示意图;Fig. 2 is another kind of traditional calibration circuit structure schematic diagram;

图3为一个实施例中的校准电路的结构示意图;3 is a schematic structural diagram of a calibration circuit in one embodiment;

图4为另一个实施例中的校准电路的结构示意图;4 is a schematic structural diagram of a calibration circuit in another embodiment;

图5为一个实施例中计算过压分压比和欠压分压比的简化图;5 is a simplified diagram of calculating the overvoltage divider ratio and the undervoltage divider ratio in one embodiment;

图6为本发明中的修调原理的图解示意;6 is a schematic diagram of the trimming principle in the present invention;

图7为一个实施例中校准电路的校准方法的流程示意图。FIG. 7 is a schematic flowchart of a calibration method of a calibration circuit in one embodiment.

具体实施方式Detailed ways

为了便于理解本申请,下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的实施例。但是,本申请可以以许多不同的形式来实现,并不限于本文所描述的实施例。相反地,提供这些实施例的目的是使本申请的公开内容更加透彻全面。In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are presented in the accompanying drawings. However, the application may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

除非另有定义,本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的,不是旨在于限制本申请。本文所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field to which this application belongs. The terms used herein in the specification of the application are for the purpose of describing specific embodiments only, and are not intended to limit the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

可以理解,本申请所使用的术语“第一”、“第二”等可在本文中用于描述各种元件,但这些元件不受这些术语限制。这些术语仅用于将第一个元件与另一个元件区分。举例来说,在不脱离本申请的范围的情况下,可以将第一电阻称为第二电阻,且类似地,可将第二电阻称为第一电阻。第一电阻和第二电阻两者都是电阻,但其不是同一电阻。需要说明的是,当一个元件被认为是“连接”另一个元件,可以是直接连接到另一个元件并与之结合为一体,或者可能同时存在居中元件,即也可以是间接连接到另一个元件。It will be understood that the terms "first", "second", etc. used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, a first resistance may be referred to as a second resistance, and similarly, a second resistance may be referred to as a first resistance, without departing from the scope of this application. Both the first resistor and the second resistor are resistors, but they are not the same resistor. It should be noted that when an element is considered to be "connected" to another element, it may be directly connected to and integrated with the other element, or an intervening element may also be present, that is, it may also be indirectly connected to the other element .

可以理解,以下实施例中的“连接”,如果被连接的电路、模块、单元等相互之间具有电信号或数据的传递,则应理解为“电连接”、“通信连接”等。It can be understood that the "connection" in the following embodiments should be understood as "electrical connection", "communication connection", etc. if the connected circuits, modules, units, etc. have electrical signals or data transmission between them.

可以理解,由于电池单元的化学成分不同,以及用户在应用时候的优化考虑以及偏好,电池保护芯片所要求的保护门限并不固定,比如锰酸锂电池通常要求4.2v的过压保护门限和2.75v的欠压保护门限。若为了榨取更多的电池容量,则会将过压保护设为4.3v;若为了获得更长的充电循环寿命,则会牺牲部分电池容量把过压值设为4.1v。而磷酸铁锂电池一般要求3.8v的过压门限和2.0v的欠压门限。虽然高端的电池保护芯片内置微控制单元MCU和存储器,可以由用户通过写入寄存器的方式来任意改变门限值和进行校准。然而,大批量采购出厂预设产品的方案更加流行,这就要求芯片所采用的构架有比较好的灵活性,通过只改变一层金属就能完成以上所需设置,以适应大多数电池。It can be understood that due to the different chemical compositions of battery cells and the optimization considerations and preferences of users in application, the protection threshold required by the battery protection chip is not fixed. For example, lithium manganate batteries usually require an overvoltage protection threshold of 4.2v and 2.75 Undervoltage protection threshold for v. In order to squeeze more battery capacity, the overvoltage protection will be set to 4.3v; in order to obtain a longer charging cycle life, part of the battery capacity will be sacrificed and the overvoltage value will be set to 4.1v. The lithium iron phosphate battery generally requires an overvoltage threshold of 3.8v and an undervoltage threshold of 2.0v. Although the high-end battery protection chip has built-in microcontroller MCU and memory, the user can arbitrarily change the threshold value and perform calibration by writing to the register. However, the scheme of purchasing factory-preset products in large quantities is more popular, which requires a relatively flexible architecture of the chip, and the above required settings can be completed by changing only one layer of metal to suit most batteries.

校准的方案需要和相应的电路架构配合,较复杂的电路架构可能会让校准方法比较简单、精确且直接,但是会占用更多的芯片面积,增加了管芯成本或者功耗。使用过于简单的电路架构,校准方法可能会变得复杂而耗时,可控性和精度变差,各参数互相影响和牵制,增加了芯片的封装测试成本和复杂性,所以,需要综合考虑校准系统的电路架构和校准方法来优化和降低成本。The calibration scheme needs to be matched with the corresponding circuit architecture. A more complex circuit architecture may make the calibration method simpler, more accurate and direct, but it will occupy more chip area and increase the die cost or power consumption. Using a circuit structure that is too simple, the calibration method may become complicated and time-consuming, the controllability and accuracy will become worse, and the parameters will affect and restrain each other, which increases the cost and complexity of the packaging and testing of the chip. Therefore, it is necessary to comprehensively consider the calibration. System circuit architecture and calibration methods to optimize and reduce cost.

此外,由于在电动车、电动工具等应用中,电池在电压上可能存在强干扰,电池保护芯片一般都有迟滞功能。比如,当电池电压达到4.2v以上触发过压保护之后,电池电压再回到刚好4.2v以下,过压保护并不会释放,而需要等到电池电压低于4.0v时,过压保护才会释放,这个200mv(也即4.2v-4.0v=200mv)的门限差称为过压保护迟滞。类似,电池电压低于2.75v时触发欠压保护之后,电压要回升到2.95v以上,欠压保护才会释放。解决过压和欠压迟滞功能问题,通过将过压和欠压的两个部分电路分开设置,使其相互不产生影响。In addition, because in applications such as electric vehicles and power tools, there may be strong interference in the voltage of the battery, and the battery protection chip generally has a hysteresis function. For example, after the overvoltage protection is triggered when the battery voltage reaches above 4.2v, the overvoltage protection will not be released when the battery voltage returns to just below 4.2v, and the overvoltage protection will not be released until the battery voltage is lower than 4.0v , the threshold difference of this 200mv (that is, 4.2v-4.0v=200mv) is called overvoltage protection hysteresis. Similarly, after the undervoltage protection is triggered when the battery voltage is lower than 2.75v, the undervoltage protection will not be released until the voltage rises above 2.95v. Solve the problem of over-voltage and under-voltage hysteresis function, by setting the two parts of the over-voltage and under-voltage circuits separately, so that they do not affect each other.

以下介绍了两个传统的电池保护芯片的校准电路方案,并且简要分析了两种电路的优缺点:The following introduces the calibration circuit schemes of two traditional battery protection chips, and briefly analyzes the advantages and disadvantages of the two circuits:

传统方案一:如图1所示,该方案使用了两组分压器,其中,过压组由电阻Rtrim_OV、电阻Rhys_OV、电阻RA_OV和电阻RB_OV依次串联,欠压组由电阻Rtrim_UV、电阻Rhys_UV、电阻RA_UV和电阻RB_UV依次串联,电阻Rtrim_OV和电阻Rtrim_UV为可调电阻,电阻Rhys_OV、电阻RA_OV、电阻RB_OV、电阻Rhys_UV、电阻RA_UV和电阻RB_UV为固定电阻。E0表示电池单元。每组分压器都有一个抽头,以引出电信号至相应的比较器CP进行比较,过压比较器CP1和欠压比较器CP2都使用同一个参考电压VREF。每一组上都串联有可调电阻(即电阻Rtrim_OV或电阻Rtrim_UV),分别用于对过压和欠压的门限进行设定和校准,迟滞则是通过在分压器上用开关短接或释放一部分电阻(即电阻Rhys_OV或电阻Rhys_UV)来实现。由于有两组分压器,此种方案会消耗较多的电流和面积,而且需要调节两个可调电阻;考虑到半导体的匹配特性,以及欠压的准确度要求比过压稍低,若合理设计,则前述的分开修调设计方式并非必要。Traditional scheme 1: As shown in Figure 1, this scheme uses two groups of voltage regulators, in which the overvoltage group consists of resistor R trim _ OV , resistor R hys_OV , resistor R A_OV and resistor R B_OV in series in sequence, and the undervoltage group consists of Resistor R trim_UV , resistor R hys_UV , resistor R A_UV and resistor R B_UV are connected in series in sequence, resistor R trim_OV and resistor R trim_UV are adjustable resistors, resistor R hys_OV , resistor R A_OV , resistor R B_OV , resistor R hys_UV , resistor R A_UV and Resistor RB_UV is a fixed resistor. E 0 represents a battery cell. Each set of voltage regulators has a tap to draw out electrical signals to the corresponding comparator CP for comparison. Both the overvoltage comparator CP1 and the undervoltage comparator CP2 use the same reference voltage V REF . An adjustable resistor (ie, resistor R trim_OV or resistor R trim_UV ) is connected in series with each group to set and calibrate the overvoltage and undervoltage thresholds, respectively. It is realized by connecting or releasing a part of the resistance (ie resistance R hys_OV or resistance R hys_UV ). Since there are two sets of voltage regulators, this solution consumes more current and area, and needs to adjust two adjustable resistors; considering the matching characteristics of semiconductors, and the accuracy requirements of undervoltage are slightly lower than that of overvoltage, if Reasonable design, the above-mentioned separate adjustment design method is not necessary.

传统方案二:如图2所示,该方案只使用一个分压器(电阻RA和电阻RB串联),唯一的抽头被同时送到过压比较器CP1和欠压比较器CP2。E0表示电池单元。此方案没有使用不同的分压比,而是通过基准电压(即参考电压)发生器REFS产生两个不同的基准电压来分别比较过压和欠压,迟滞也通过略微改变电压基准的输出来实现。与上述传统方案一相比较,分压器部分能够节省一半的功耗和面积。但是两个比较器CP工作在不同的共模电压下,比较器基本上无法使用相同的设计,则会带来额外的设计和验证工作,并且能独立输出两种基准电压的基准源在设计上会受到诸多限制,比如需要额外的电阻,额外的缓冲器,带来额外的功耗和稳定性问题,尤其是现有技术中普遍使用的耗尽管基准,并不适宜在该方案中使用。Conventional scheme 2: As shown in Figure 2, this scheme uses only one voltage divider (resistor RA and resistor RB in series), and the only tap is sent to both the overvoltage comparator CP1 and the undervoltage comparator CP2. E 0 represents a battery cell. This scheme does not use different voltage divider ratios, but generates two different reference voltages through the reference voltage (i.e. reference voltage) generator REFS to compare the overvoltage and undervoltage respectively, and the hysteresis is also achieved by slightly changing the output of the voltage reference. . Compared with the above-mentioned traditional scheme 1, the voltage divider part can save half of the power consumption and area. However, the two comparators CP work under different common-mode voltages, and the comparators basically cannot use the same design, which will bring additional design and verification work, and the reference source that can independently output two reference voltages is designed There will be many limitations, such as the need for additional resistors and additional buffers, resulting in additional power consumption and stability problems, especially the power consumption benchmark commonly used in the prior art is not suitable for use in this solution.

本发明针对传统方案中功耗、面积与电路复杂性等的综合性能不足的技术问题,在传统方案的基础上,降低功耗和面积,同时降低电路的复杂性,简化校准流程,并且同时具有仅通过改变分压器抽头的位置就能重新定制门限和迟滞的值的能力,从而能够非常方便高效地满足不同电池以及不同用户的校准使用需求和偏好,校准电路及其应用的电池保护芯片的综合性能较高。Aiming at the technical problem of insufficient comprehensive performance of power consumption, area and circuit complexity in the traditional scheme, the present invention reduces power consumption and area, reduces the complexity of the circuit, simplifies the calibration process, and simultaneously has the advantages of the traditional scheme. The ability to re-customize the value of the threshold and hysteresis only by changing the position of the tap of the voltage divider, so that it can be very convenient and efficient to meet the needs and preferences of different batteries and different users. The overall performance is high.

下面,结合附图和具体实施例对本发明作详细说明。Hereinafter, the present invention will be described in detail with reference to the accompanying drawings and specific embodiments.

如图3所示,在一个实施例中,本申请提供一种校准电路100,其包括可调电阻Rtrim、电阻分压器12、第一选路开关14、第二选路开关16、过压比较器CP1和欠压比较器CP2。电阻分压器包括依次串联的电阻RA、电阻RB、电阻RC、电阻RD和电阻RE。可调电阻Rtrim的一端用于电连接电池单元E0的正极,可调电阻Rtrim的另一端电连接电阻RA的一端,电阻RE的另一端用于电连接电池单元E0的负极与地端。As shown in FIG. 3 , in one embodiment, the present application provides a calibration circuit 100 , which includes an adjustable resistor R trim , a resistor divider 12 , a first routing switch 14 , a second routing switch 16 , a Voltage comparator CP1 and undervoltage comparator CP2. The resistor divider includes a resistor RA , a resistor RB , a resistor RC , a resistor RD , and a resistor RE in series in sequence. One end of the adjustable resistor R trim is used to electrically connect the positive electrode of the battery unit E 0 , the other end of the adjustable resistor R trim is electrically connected to one end of the resistor RA, and the other end of the resistor RE is used to electrically connect the negative electrode of the battery unit E 0 with the ground end.

电阻RA与电阻RB的连接处引出过压抽头并电连接至第一选路开关的一个输入端。电阻RB与电阻RC的连接处引出过压迟滞抽头并电连接至第一选路开关的另一个输入端。第一选路开关的输出端电连接过压比较器CP1的正相输入端。电阻RC与电阻RD的连接处引出欠压抽头并电连接至第二选路开关的一个输入端。电阻RD与电阻RE的连接处引出欠压迟滞抽头并电连接至第二选路开关的另一个输入端。第二选路开关的输出端电连接欠压比较器CP2的正相输入端。过压比较器CP1和欠压比较器CP2的反相输入端均用于接入参考电压。An overvoltage tap is drawn from the connection between the resistor RA and the resistor RB and is electrically connected to an input end of the first routing switch. An overvoltage hysteresis tap is drawn from the connection between the resistor RB and the resistor RC and is electrically connected to the other input end of the first routing switch. The output terminal of the first routing switch is electrically connected to the non-inverting input terminal of the overvoltage comparator CP1. An undervoltage tap is drawn from the connection between the resistor RC and the resistor RD and is electrically connected to an input end of the second routing switch. An undervoltage hysteresis tap is drawn from the connection between the resistor R D and the resistor RE and is electrically connected to the other input end of the second routing switch. The output terminal of the second routing switch is electrically connected to the non-inverting input terminal of the undervoltage comparator CP2. Both the inverting input terminals of the overvoltage comparator CP1 and the undervoltage comparator CP2 are used to access the reference voltage.

可以理解,在本实施例中,上述电池单元E0可以是本领域中,校准电路100所应用的电池保护芯片所保护的各型电池单元E0。可调电阻Rtrim也可称为修调电阻,在本领域的IC设计中,通常可以将需要调节的修调电阻分成若干节段串联而成,再通过熔丝把其中一些节段短路或者释放的方式来步进式地改变电阻的大小。可调电阻Rtrim的总电阻大小,可以根据不同应用场景的需要进行选择,电阻分压器12的总电阻大小,同理,可根据不同应用场景的需要进行选择。It can be understood that, in this embodiment, the above-mentioned battery unit E 0 may be various types of battery units E 0 protected by the battery protection chip applied in the calibration circuit 100 in the art. Adjustable resistor R trim can also be called trim resistor. In IC design in this field, the trim resistor that needs to be adjusted can usually be divided into several segments in series, and then some segments are short-circuited or released through fuses. way to change the size of the resistor step by step. The total resistance of the adjustable resistor R trim can be selected according to the needs of different application scenarios, and the total resistance of the resistor divider 12 can be selected according to the needs of different application scenarios in the same way.

第一选路开关14和第二选路开关16可以是相同的选路开关,也可以是不同的选路开关,例如但不限于第一选路开关14和第二选路开关16均可以是本领域中同一种多选一的多路器,如二选一多路器、四选一多路器、八选一多路器和十六选一多路器等多种多路器中的任一种;或者,第一选路开关14可以是本领域多种多路器中的任一种,而第二选路开关16则可以是本领域多种多路器中的任意另外一种不同于第一选路开关14的多路器。在一些实施方式中,第一选路开关14和第二选路开关16还可以是其他采用电信号控制输入切换的选择开关。The first routing switch 14 and the second routing switch 16 may be the same routing switch or different routing switches, for example, but not limited to, the first routing switch 14 and the second routing switch 16 may both be The same multiple-choice multiplexer in this field, such as two-to-one multiplexer, four-to-one multiplexer, eight-to-one multiplexer, and sixteen-to-one multiplexer among various multiplexers any one; or, the first routing switch 14 can be any one of the various multiplexers in the art, and the second routing switch 16 can be any other one of the various multiplexers in the art A multiplexer other than the first routing switch 14 . In some embodiments, the first routing switch 14 and the second routing switch 16 may also be other selection switches that use electrical signals to control input switching.

具体的,图3中所示的电阻分压器12由电阻RA、电阻RB、电阻RC、电阻RD和电阻RE串联而成。从电阻分压器12中两两串联的电阻之间的连接位置,分别引出四个抽头,按照分压比从高低的顺序分别是:过压抽头、过压迟滞抽头、欠压抽头和欠压迟滞抽头,分别用于支持所需的过压/欠压保护、(过压/欠压)迟滞功能等。Specifically, the resistor divider 12 shown in FIG. 3 is formed by connecting a resistor RA , a resistor RB , a resistor RC , a resistor RD and a resistor RE in series. From the connection positions between the resistors in the resistor divider 12 in series, four taps are drawn out respectively. According to the order of the voltage divider ratio from high to low, they are: overvoltage tap, overvoltage hysteresis tap, undervoltage tap and undervoltage. Hysteresis taps, respectively, to support desired over/under voltage protection, (over/under voltage) hysteresis functions, etc.

本申请中,使用了选路开关来实现迟滞功能,过压抽头和过压迟滞抽头通过第一选路开关14接入过压比较器CP1的一个输入端,同理,欠压抽头和欠压迟滞抽头通过第二选路开关接入欠压比较器CP2的一个输入端。过压比较器CP1和欠压比较器CP2的另一个输入端接一个同样的参考电压。通过分别控制第一选路开关14和第二选路开关16选择接通其迟滞抽头,改变了分压比,进而改变门限值,即可实现迟滞功能。In this application, a routing switch is used to realize the hysteresis function. The overvoltage tap and the overvoltage hysteresis tap are connected to an input end of the overvoltage comparator CP1 through the first routing switch 14. Similarly, the undervoltage tap and the undervoltage tap The hysteresis tap is connected to an input terminal of the undervoltage comparator CP2 through the second routing switch. The other input terminals of the overvoltage comparator CP1 and the undervoltage comparator CP2 are connected to a same reference voltage. By controlling the first routing switch 14 and the second routing switch 16 to select and turn on their hysteresis taps, the voltage division ratio is changed, and then the threshold value is changed, so that the hysteresis function can be realized.

上述校准电路,通过采用一个可调电阻Rtrim、一个电阻分压器、第一选路开关、第二选路开关、过压比较器CP1和欠压比较器CP2构成的校准电路结构,与传统方案相比,节省了一个分压器,从而为芯片节省了一半的功耗和面积;只需要通过调节一个可调电阻Rtrim就可以同时校准过压门限和欠压门限,修调过程所耗费的时间也会被大幅缩短。此外,本方案中过压比较器CP1和欠压比较器CP2可以使用同样的电路设计,可以复用;参考电压VREF也可以使用常规的设计,不需要设计成可调节的,而且过压/欠压迟滞也可以分开设置而不互相牵制,从而大大降低了电路设计的难度和复杂性,达到了显著提高电池保护芯片电路综合性能的目的。The above calibration circuit adopts a calibration circuit structure composed of an adjustable resistor R trim , a resistor divider, a first routing switch, a second routing switch, an overvoltage comparator CP1 and an undervoltage comparator CP2, which is different from the traditional one. Compared with the solution, a voltage divider is saved, which saves half of the power consumption and area of the chip; only by adjusting an adjustable resistor R trim , the overvoltage threshold and undervoltage threshold can be calibrated at the same time, and the trimming process costs time will be greatly shortened. In addition, the overvoltage comparator CP1 and the undervoltage comparator CP2 in this scheme can use the same circuit design and can be reused; the reference voltage V REF can also use a conventional design, it does not need to be designed to be adjustable, and the overvoltage/ The undervoltage hysteresis can also be set separately without restraining each other, which greatly reduces the difficulty and complexity of circuit design, and achieves the purpose of significantly improving the overall performance of the battery protection chip circuit.

如图4所示,在一个实施例中,第一选路开关14为二选一多路器Q1。二选一多路器Q1的控制信号输入端用于接入过压迟滞的使能信号。过压迟滞的使能信号用于指示二选一多路器Q1将过压迟滞抽头接通至过压比较器CP1。As shown in FIG. 4 , in one embodiment, the first routing switch 14 is a two-to-one multiplexer Q 1 . The control signal input end of the two-to-one multiplexer Q 1 is used to access the enable signal of the overvoltage hysteresis. The overvoltage hysteresis enable signal is used to instruct the two-to- one multiplexer Q1 to turn on the overvoltage hysteresis tap to the overvoltage comparator CP1.

可以理解,在本实施例中,可以采用一个二选一多路器Q1作为第一选路开关14,通过过压迟滞的使能信号来控制二选一多路器Q1,实现过压抽头与过压迟滞抽头分别接通至过压比较器CP1的正相输入端。其中,过压迟滞的使能信号可记为SEL_A,可以由校准电路100所在的电池保护芯片上相应的使能引脚提供,也可以采用额外设置的使能控制信号源来产生。通过采用二选一多路器Q1实现所需的过压保护/迟滞功能的切换,可靠性较高且成本低,不会增加芯片功耗与面积占用。It can be understood that in this embodiment, a two-to-one multiplexer Q 1 can be used as the first routing switch 14 , and the two-to-one multiplexer Q 1 is controlled by an enable signal of overvoltage hysteresis to realize overvoltage The tap and the overvoltage hysteresis tap are respectively connected to the non-inverting input of the overvoltage comparator CP1. The enable signal of the overvoltage hysteresis may be recorded as SEL_A, which may be provided by a corresponding enable pin on the battery protection chip where the calibration circuit 100 is located, or may be generated by an additionally set enable control signal source. By adopting the two-to- one multiplexer Q1 to realize the switching of the required overvoltage protection/hysteresis function, the reliability is high and the cost is low, and the power consumption and area occupation of the chip will not be increased.

如图4所示,在一个实施例中,第二选路开关16为二选一多路器Q2。二选一多路器Q2的控制信号输入端用于接入欠压迟滞的使能信号。欠压迟滞的使能信号用于指示二选一多路器Q2将欠压迟滞抽头接通至欠压比较器CP2。As shown in FIG. 4 , in one embodiment, the second routing switch 16 is a two-to-one multiplexer Q 2 . The control signal input end of the two-to-one multiplexer Q 2 is used to access the enable signal of undervoltage hysteresis. The undervoltage hysteresis enable signal is used to instruct the two-to-one multiplexer Q2 to turn on the undervoltage hysteresis tap to the undervoltage comparator CP2.

可以理解,在本实施例中,可以采用一个二选一多路器Q2作为第二选路开关16,通过过压迟滞的使能信号来控制二选一多路器Q2,实现欠压抽头与欠压迟滞抽头分别接通至欠压比较器CP2的正相输入端。其中,欠压迟滞的使能信号可记为SEL_B,可以由校准电路100所在的电池保护芯片上相应的使能引脚提供,也可以采用额外设置的使能控制信号源来产生。通过采用二选一多路器Q2实现所需的欠压保护/迟滞功能的切换,可靠性较高且成本低,不会增加芯片功耗与面积占用。It can be understood that in this embodiment, a two-to-one multiplexer Q 2 can be used as the second routing switch 16 , and the two-to-one multiplexer Q 2 is controlled by an enable signal of overvoltage hysteresis to realize undervoltage The tap and the undervoltage hysteresis tap are respectively connected to the non-inverting input of the undervoltage comparator CP2. The enable signal of undervoltage hysteresis may be recorded as SEL_B, which may be provided by a corresponding enable pin on the battery protection chip where the calibration circuit 100 is located, or may be generated by an additionally set enable control signal source. By adopting the two-to-one multiplexer Q2 to realize the switching of the required undervoltage protection/hysteresis function, the reliability is high and the cost is low, and the power consumption and area occupation of the chip will not be increased.

优选的,可以通过采用一个二选一多路器Q1作为第一选路开关14以及一个二选一多路器Q2作为第二选路开关16,用于分别实现其所需的功能切换控制,过压/欠压迟滞可分开设置而不互相牵制,从而能够进一步降低电路设计的难度和复杂性。Preferably, a two-to-one multiplexer Q 1 can be used as the first routing switch 14 and a two-to-one multiplexer Q 2 can be used as the second routing switch 16 to respectively realize the required function switching. Control, overvoltage/undervoltage hysteresis can be set separately without pinning each other, which can further reduce the difficulty and complexity of circuit design.

在一个实施例中,可调电阻Rtrim包括串联的32个节段电阻。可以理解,在IC设计中,一般把需要调节的电阻分成若干节段串联,再通过熔丝把其中一些节段短路或者释放的方法来步进式地改变电阻的大小。而修调电阻的设计要考虑三个方面:第一,希望分压器消耗的电流小于0.5uA,这需要电阻的阻值足够大;第二,要考虑满足修调的精度要求,这需要修调电阻的节段数足够多,第三,考虑到芯片版图的面积和绘制的便利性,电阻的面积(正比于阻值)不能太大,节段数不能太多。优选的,由于修调电阻的节段最少需要被分成28份,至少需要五位二进制的校准码来对应,所以修调电阻可选择分为五位二进制所对应的32份,也即由32个节段电阻串联组成。通过采用上述节段数的可调电阻Rtrim,可以高效地满足校准需要,同时能够使得芯片的综合性能易于达到最佳。In one embodiment, the adjustable resistor R trim includes 32 segment resistors connected in series. It can be understood that in IC design, the resistance to be adjusted is generally divided into several segments in series, and then the size of the resistance is changed step by step by short-circuiting or releasing some of the segments through a fuse. The design of the trim resistor should consider three aspects: first, it is hoped that the current consumed by the voltage divider is less than 0.5uA, which requires the resistance of the resistor to be large enough; second, it is necessary to consider meeting the accuracy requirements of trimming, which requires repairing The number of segments for adjusting the resistor is sufficient. Third, considering the area of the chip layout and the convenience of drawing, the area of the resistor (proportional to the resistance value) should not be too large, and the number of segments should not be too large. Preferably, since the segment of the trimming resistor needs to be divided into at least 28 parts, and at least a five-digit binary calibration code is required to correspond, the trimming resistor can be divided into 32 parts corresponding to the five-digit binary, that is, 32 The segment resistors are connected in series. By using the adjustable resistor R trim with the above-mentioned number of segments, the calibration requirement can be efficiently met, and the overall performance of the chip can easily be optimized.

在一个实施例中,各节段电阻为高阻多晶硅方块电阻。可以理解,在本实施例中,IC制造工艺中提供高阻多晶硅方块电阻,方块电阻值为3k ohm每方块。如此,可以较好地满足可调电阻Rtrim的设计需要。In one embodiment, each segment resistance is a high resistance polysilicon sheet resistance. It can be understood that, in this embodiment, a high-resistance polysilicon sheet resistance is provided in the IC manufacturing process, and the sheet resistance value is 3k ohm per square. In this way, the design requirement of the adjustable resistor R trim can be better satisfied.

为了更直观地说明本发明上述各实施例的校准电路100,给出了如下具体设计示例。需要说明的是,以下示例并非对本发明上述各实施例的唯一限定,而是其中一种示意性的具体设计实施方式:In order to more intuitively describe the calibration circuit 100 of the above embodiments of the present invention, the following specific design examples are given. It should be noted that the following examples are not the only limitations to the above-mentioned embodiments of the present invention, but are one of the illustrative specific design implementations:

例如:针对某一种电池,用户希望定制电池保护芯片,其要求如下:过压保护门限修调后的目标为4.2v,在表1中用VOV_target表示;过压保护的迟滞为200mv,在表1中用VHYS_OV表示;欠压保护门限为2.75v,欠压保护的迟滞为+200mv,同理,分别用VUV_target和VHYS_UV来表示;修调以后过压保护的精度达到±25mv,在芯片设计中,采用常见的名义输出为1.22v的带隙基准作为参考电压Vref。经过一系列的仿真和估算,认为考虑所有参考电压随工艺、电压和温度(PVT)变动的情况,参考电压的范围为1.10~1.40v(即Vref_min~Vref_max)。使用表1,可以得出所有需要的五个比值以及修调电阻分段数等设计参数。如图5所示,分别为过压分压比的简化图和欠压分压比的简化图。For example: for a certain battery, the user wants to customize the battery protection chip, and the requirements are as follows: the target of the overvoltage protection threshold after adjustment is 4.2v, which is represented by V OV_target in Table 1; the hysteresis of the overvoltage protection is 200mv, and the In Table 1, it is represented by V HYS_OV ; the undervoltage protection threshold is 2.75v, and the hysteresis of undervoltage protection is +200mv. Similarly, they are represented by V UV_target and V HYS_UV respectively; after adjustment, the accuracy of overvoltage protection reaches ±25mv, In chip design, a common bandgap reference with a nominal output of 1.22v is used as the reference voltage V ref . After a series of simulations and estimations, it is considered that the range of the reference voltage is 1.10-1.40v (ie V ref_min ˜V ref_max ) considering all the variation of the reference voltage with process, voltage and temperature (PVT). Using Table 1, all five required ratios and design parameters such as the number of trim resistor segments can be derived. As shown in Figure 5, it is a simplified diagram of the overvoltage divider ratio and a simplified diagram of the undervoltage divider ratio, respectively.

表1分压比的确定Table 1 Determination of partial pressure ratio

Figure BDA0003082939880000121
Figure BDA0003082939880000121

表1(续)Table 1 (continued)

Figure BDA0003082939880000131
Figure BDA0003082939880000131

表格内字母A、B和B1分别表示图5中各相应电阻大小的数值,X表示修调电阻值,Xstep表示修调步长大小,Vref_nominal表示名义上的参考电压值。The letters A , B and B1 in the table represent the values of the corresponding resistors in Figure 5, X represents the trimming resistance value, Xstep represents the trimming step size, and Vref_nominal represents the nominal reference voltage value.

在IC设计中,一般把需要调节的电阻分成若干节段串联,再通过熔丝把其中一些节段短路或者释放的方法来步进式地改变电阻的大小。本实施例中的IC制造工艺中提供高阻多晶硅电阻,方块电阻值为3k ohm每方块。修调电阻的设计要考虑三个方面:第一,希望分压器消耗的电流小于0.5uA,这需要电阻的阻值足够大;第二,要考虑满足修调的精度要求,这需要修调电阻的节段数足够多,第三,考虑到版图的面积和绘制的便利性,电阻的面积(正比于阻值)不能太大,节段数不能太多。在经过权衡和折中后,确定电阻分压器的总电阻为8.1M ohm,分为了54个节段,每节段长度为50um,宽度为1um,最小可调的单位为0.5个节段(两节并联),所以表1中为了统一,都以54为分母。In IC design, the resistance to be adjusted is generally divided into several segments in series, and then some segments are short-circuited or released through fuses to change the size of the resistance step by step. The IC manufacturing process in this embodiment provides high-resistance polysilicon resistors with a sheet resistance value of 3k ohm per square. The design of the trimming resistor should consider three aspects: first, it is hoped that the current consumed by the voltage divider is less than 0.5uA, which requires the resistance of the resistor to be large enough; secondly, it is necessary to consider meeting the accuracy requirements of trimming, which requires trimming The number of segments of the resistor is sufficient. Third, considering the area of the layout and the convenience of drawing, the area of the resistor (proportional to the resistance value) should not be too large, and the number of segments should not be too large. After trade-offs and compromises, the total resistance of the resistor divider is determined to be 8.1M ohm, divided into 54 segments, each segment is 50um in length and 1um in width, and the minimum adjustable unit is 0.5 segments ( The two sections are connected in parallel), so in Table 1, for the sake of unity, 54 is used as the denominator.

对于过压抽头和过压迟滞抽头的位置选择HOV=+1/54代表的意思是:从过压保护(OV)抽头上移一个节段;同理,对于欠压抽头和欠压迟滞抽头的位置选择HUV=-2/54表示:从欠压保护(UV)抽头下移两个节段。修调电阻X的节段则需要另外计算,最少要被分成28份,至少需要五位二进制的校准码来对应,所以修调电阻X被分成了五位二进制所对应的32份。Selecting H OV = +1/54 for the positions of the overvoltage tap and overvoltage hysteresis tap means: move up one segment from the overvoltage protection (OV) tap; similarly, for the undervoltage tap and undervoltage hysteresis tap The location selection of H UV = -2/54 means: move down two segments from the undervoltage protection (UV) tap. The segment of the trimming resistor X needs to be calculated separately, at least divided into 28 parts, and at least a five-digit binary calibration code is needed to correspond, so the trimming resistor X is divided into 32 parts corresponding to the five-digit binary.

至此,关于电阻的设计参数已经由以上的图表和分析所确定,设计完成。So far, the design parameters of the resistance have been determined by the above chart and analysis, and the design is completed.

以下对表1中的电阻比值获取方法的原理进行解释和分析。在此,修调电阻代表只能分段调节而不能连续调节的可调电阻Rtrim:分压比的确定方法,如图4所示,首先要估计基准电压的偏差范围,就是基准电压在批量生产过程中可能出现的最大值(Vref_max)和最小值(Vref_min)。当修调电阻Rtrim被全部短接,电阻值为Xmin(一般取值为零)时,分压比最大,此时对应的是基准电压达到偏差的上限情况。应用表1所得出的分压比,让修调电阻X为零时同时基准误差达到偏差上限时,门限电压等于修调后的门限目标值(如式1)。The principle of the method for obtaining the resistance ratio in Table 1 is explained and analyzed below. Here, the trim resistor represents an adjustable resistor R trim that can only be adjusted in stages but not continuously: the method for determining the voltage divider ratio, as shown in Figure 4, firstly estimates the deviation range of the reference voltage, that is, when the reference voltage is in batches Maximum value (V ref_max ) and minimum value (V ref_min ) that may occur during production. When the trim resistors R trim are all short-circuited, and the resistance value is X min (generally set to zero), the voltage divider ratio is the largest, which corresponds to the case where the reference voltage reaches the upper limit of the deviation. Using the voltage divider ratio obtained in Table 1, when the trimming resistor X is zero and the reference error reaches the upper limit of the deviation, the threshold voltage is equal to the trimmed threshold target value (as in Equation 1).

当修调电阻X被全部释放时,电阻值最大,等于Xmax,分压比最小,此时对应的是基准电压偏差的下限。应用表1来设置分压比,让修调电阻达到最大,同时基准误差达到偏差下限时。门限电压也等于修调的目标值(如式2)。When the trimming resistor X is fully released, the resistance value is the largest, which is equal to X max , and the voltage division ratio is the smallest, which corresponds to the lower limit of the reference voltage deviation. Use Table 1 to set the voltage divider ratio to maximize the trimming resistance and when the reference error reaches the lower deviation limit. The threshold voltage is also equal to the trimmed target value (as in Equation 2).

Figure BDA0003082939880000141
Figure BDA0003082939880000141

对上式进行整理得到:Arrange the above formula to get:

Figure BDA0003082939880000142
Figure BDA0003082939880000142

此时已知修调的目标值,基准电压的偏差上限和下限,可得到两个比例:At this time, the target value of trimming and the upper and lower limits of the deviation of the reference voltage are known, and two ratios can be obtained:

Figure BDA0003082939880000143
Figure BDA0003082939880000144
Figure BDA0003082939880000143
and
Figure BDA0003082939880000144

只要符合前述比例,具体的值可根据电路和版图设计的需要来指定,在本实施例中,若电阻分压器的总电阻为6.4M ohm,指定了A、B和Xmax其中一个,则另外两个也可以随之确定。至此确定了OV的分压比:As long as the above ratio is met, the specific value can be specified according to the needs of circuit and layout design. In this embodiment, if the total resistance of the resistor divider is 6.4M ohm, and one of A, B and X max is specified, then The other two can be determined accordingly. So far, the voltage divider ratio of OV has been determined:

Figure BDA0003082939880000145
Figure BDA0003082939880000145

以上结论主要是根据过压门限优先的原则来计算的。下面证明,当OV门限被调节准确以后,实际上UV的门限也被调节准确了:先将电阻B分为两个部分,B1和B2,在两者的中间,是UV的抽头。在OV被校准以后,修调电阻X就是一个特定的常数,当电池单元电压达到OV门限时,有参考电压VrefThe above conclusions are mainly calculated according to the principle of overvoltage threshold priority. The following proves that when the OV threshold is adjusted accurately, the UV threshold is also adjusted accurately: first divide the resistor B into two parts, B 1 and B 2 , and in the middle is the UV tap. After OV is calibrated, the trim resistor X is a specific constant, and when the cell voltage reaches the OV threshold, there is a reference voltage V ref :

Figure BDA0003082939880000151
Figure BDA0003082939880000151

然后,当达电池单元电压到UV的门限时,又有:Then, when the threshold of the battery cell voltage to UV is reached, there is:

Figure BDA0003082939880000152
Figure BDA0003082939880000152

联立前两个公式,可得到以下的关系式:Combining the first two formulas, the following relationship can be obtained:

Figure BDA0003082939880000153
Figure BDA0003082939880000153

所以,确定UV抽头的分压比,只需要知道过压和欠压的目标值即可:Therefore, to determine the voltage divider ratio of the UV tap, you only need to know the target values of overvoltage and undervoltage:

Figure BDA0003082939880000154
Figure BDA0003082939880000154

确定过压迟滞和欠压迟滞的分压比的过程,实质上和确定过压和欠压的分压比的过程是一样的,不同之处在于用加了迟滞的VOV_target+VHYS_OV和VUV_target+VHYS_UV,分别替换了VOV_target和VUV_target,其本质上是另外一个稍有不同的门限值。由于修调电阻X的值会对迟滞有所影响,这里使用Vref_nominal替换Vref_max和Vref_min以得到最小的综合误差:The process of determining the divider ratio of overvoltage hysteresis and undervoltage hysteresis is essentially the same as the process of determining the divider ratio of overvoltage and undervoltage, except that the hysteresis V OV_target +V HYS_OV and V are used. UV_target +V HYS_UV , respectively replacing V OV_target and V UV_target , which are essentially another slightly different threshold value. Since trimming the value of resistor X can have an effect on the hysteresis, here Vref_nominal is used to replace Vref_max and Vref_min to get the smallest overall error:

Figure BDA0003082939880000155
Figure BDA0003082939880000155

Figure BDA0003082939880000156
Figure BDA0003082939880000156

此处可以得到一个重要的结论:修调的步进实际上不是固定的,而是和参考电压相关,如图6所示,图中的三个分段箭头表示随着校准码(也称修调码)的变化(以两位二进制校准码00~11为例),过压门限或欠压门限的改变情况,上方的箭头为参考电压位于预估的最高值时的情况,下方是位于最低值时的情况,中间为参考电压为典型值时的情况。参考电压较高时修调步长变长。然而,若参考电压达到估计的上限时,修调步长仍然可以满足对精度要求,则所有的参考电压在估计范围内的情况,都可以满足精度的要求。此外,若满足:其一,参考电压处于预估的最高值时,在校准码为00(对应Xmax)时,实际门限等于修调目标门限(图中的PA点);其二,参考电压处于预估的最低值时,在校准码为11(对应Xmin)时,实际门限等于修调目标门限(图中的PB点)。则在所有参考电压在预估范围内的芯片都能被修调成功。An important conclusion can be drawn here: the step of trimming is not actually fixed, but is related to the reference voltage, as shown in Figure 6, the three segmented arrows in the figure indicate that with the calibration code (also called trimming) code) (taking the two-digit binary calibration code 00~11 as an example), the change of the overvoltage threshold or the undervoltage threshold, the upper arrow is the situation when the reference voltage is at the estimated maximum value, and the lower one is at the lowest value, the middle is when the reference voltage is a typical value. The trim step becomes longer when the reference voltage is higher. However, if the reference voltage reaches the upper limit of the estimation, the trimming step size can still meet the accuracy requirement, then all the cases where the reference voltage is within the estimation range can meet the accuracy requirement. In addition, if the following conditions are met: First, when the reference voltage is at the estimated highest value, when the calibration code is 00 (corresponding to X max ), the actual threshold is equal to the adjustment target threshold (point P A in the figure); second, the reference When the voltage is at the estimated minimum value, when the calibration code is 11 (corresponding to X min ), the actual threshold is equal to the trim target threshold (point P B in the figure). Then, all chips whose reference voltage is within the estimated range can be successfully trimmed.

在一个实施例中,本发明还提供一种电池保护芯片,包括芯片本体和上述的校准电路100。可以理解,本实施例中的芯片本体是指本领域中,校准电路100所能应用于的各类电池保护芯片的芯片本体,关于本实施例中的校准电路100的具体解释说明,可以参见上述各个校准电路100的实施例中相应解释说明同理理解,此处不再重复赘述。In one embodiment, the present invention further provides a battery protection chip, including a chip body and the above-mentioned calibration circuit 100 . It can be understood that the chip body in this embodiment refers to the chip body of various battery protection chips to which the calibration circuit 100 can be applied in the art. For the specific explanation of the calibration circuit 100 in this embodiment, please refer to the above Corresponding explanations in the embodiments of each calibration circuit 100 should be understood in the same way, and will not be repeated here.

上述电池保护芯片,通过应用上述校准电路100,可节省芯片的功耗和面积,大幅缩短修调时间,大大降低了电池保护芯片的电路设计难度和复杂性,达到了显著提高电池保护芯片电路综合性能的目的。The above-mentioned battery protection chip, by applying the above-mentioned calibration circuit 100, can save the power consumption and area of the chip, greatly shorten the trimming time, greatly reduce the difficulty and complexity of the circuit design of the battery protection chip, and achieve a significant improvement in the circuit synthesis of the battery protection chip. performance purpose.

在一个实施例中,如图7所示,本发明还提供一种校准电路的校准方法,用于校准上述的校准电路100,上述方法包括以下步骤S12至S18:In one embodiment, as shown in FIG. 7 , the present invention further provides a method for calibrating a calibration circuit for calibrating the above-mentioned calibration circuit 100, and the above-mentioned method includes the following steps S12 to S18:

S12,确定校准电路的设计参数;设计参数包括过压抽头分压比、欠压抽头分压比、过压迟滞抽头分压比、欠压迟滞抽头分压比、可调电阻比值和可调电阻分段数;S12, determine the design parameters of the calibration circuit; the design parameters include the overvoltage tap divider ratio, the undervoltage tap divider ratio, the overvoltage hysteresis tap divider ratio, the undervoltage hysteresis tap divider ratio, the adjustable resistance ratio and the adjustable resistance number of segments;

S14,测量校准电路在未经校准前的过压保护门限值;S14, measure the overvoltage protection threshold value of the calibration circuit before calibration;

S16,利用二进制校准码公式根据设计参数与过压保护门限值,计算得到校准码;校准码用于校准上述校准电路;S16, use the binary calibration code formula to calculate the calibration code according to the design parameters and the overvoltage protection threshold value; the calibration code is used to calibrate the above-mentioned calibration circuit;

S18,采用熔丝编程的方法,将校准码写入校准电路的芯片。S18, using the method of fuse programming, write the calibration code into the chip of the calibration circuit.

可以理解,校准电路的各设计参数可以在电路设计完成时即可确定。在电池保护芯片被生产出来以后,首先测量未经校准前的过压保护门限值VOV_raw,由于电阻分压器的误差相对基准电压的误差是可以忽略的,比较器的失调可以等效折算到电压基准的误差中,可以反推出参考电压Vref。然后,已知比较器不吸收电流,电阻RA上的电流和可调电阻Rtrim上的电流相等。所以每增加X(即可调电阻Rtrim的阻值)的一个步进,门限会被相应提高

Figure BDA0003082939880000171
It can be understood that each design parameter of the calibration circuit can be determined when the circuit design is completed. After the battery protection chip is produced, first measure the uncalibrated overvoltage protection threshold V OV_raw , since the error of the resistor divider is negligible relative to the error of the reference voltage, the offset of the comparator can be equivalently converted Into the error of the voltage reference, the reference voltage V ref can be inversely derived. Then, knowing that the comparator does not sink current, the current on resistor RA is equal to the current on adjustable resistor R trim . Therefore, for each step of increasing X (that is, the resistance value of the adjustable resistor R trim ), the threshold will be increased accordingly
Figure BDA0003082939880000171

通过一次测量就能够得到校准电阻值的方法:The method to get the calibrated resistance value by one measurement:

Figure BDA0003082939880000172
Figure BDA0003082939880000172

现在分析如何保证可校准的范围和校准后的精度。校准是通过分段地改变修调电阻X的值来实现的。在本实施例中使用5根熔丝,也就对应00000~11111的五位二进制校准码。修调电阻X分段的数量决定了修调以后所能达到的精度,修调的步长

Figure BDA0003082939880000173
其中,N表示熔丝的根数(即熔丝的数量)。Now analyze how to guarantee the calibratable range and post-calibration accuracy. Calibration is accomplished by changing the value of the trim resistor X in stages. In this embodiment, five fuses are used, corresponding to five-digit binary calibration codes of 00000-11111. The number of segments of the trimming resistor X determines the accuracy that can be achieved after trimming, and the step size of trimming
Figure BDA0003082939880000173
Among them, N represents the number of fuses (ie, the number of fuses).

修调电阻X被分成多份,每释放一份X电阻进入电阻分压器,门限会变高一个步长Xstep,要保证修调精度优于±25mv,则需要在最差情况下Xstep小于50mv,显然,最差情况是Vref=Vref_max,因此X最少被分成28份,则取五位二进制,一共有32份。The trimming resistor X is divided into multiple parts. Each time the X resistor is released into the resistor divider, the threshold will increase by a step length X step . To ensure the trimming accuracy is better than ±25mv, it is necessary to set X step in the worst case. If it is less than 50mv, obviously, the worst case is V ref =V ref_max , so X is divided into at least 28 parts, then take five binary digits, and there are 32 parts in total.

在一个实施例中,二进制校准码(也即校准码)生成公式为:

Figure BDA0003082939880000174
In one embodiment, the generation formula of the binary calibration code (that is, the calibration code) is:
Figure BDA0003082939880000174

在一个实施例中,可调电阻比值通过如下公式确定:In one embodiment, the adjustable resistance ratio is determined by the following formula:

Figure BDA0003082939880000175
Figure BDA0003082939880000175

其中,Xmax表示可调电阻的最大阻值,A表示电阻RA的阻值,B表示电阻RB的阻值,Vref_max表示参考电压的最大值,Vref_min表示参考电压的最小值;Among them, X max represents the maximum resistance value of the adjustable resistor, A represents the resistance value of the resistor RA, B represents the resistance value of the resistor RB, V ref_max represents the maximum value of the reference voltage, and V ref_min represents the minimum value of the reference voltage;

可调电阻分段数通过如下公式确定:The number of adjustable resistor segments is determined by the following formula:

Figure BDA0003082939880000181
Figure BDA0003082939880000181

其中,Xstep表示修调步长,A表示电阻RA的阻值,Vref_max表示参考电压的最大值,P表示修调精度。Among them, X step represents the adjustment step length, A represents the resistance value of the resistor RA, V ref_max represents the maximum value of the reference voltage, and P represents the adjustment precision.

在一个实施例中,进一步需要对未经校准前的过压保护门限值VOV_raw的有效区域进行定义,若超出该区域,则无法通过校准达到需要的精度,该区域为:In one embodiment, it is further necessary to define the valid area of the overvoltage protection threshold value V OV_raw before calibration. If this area is exceeded, the required accuracy cannot be achieved through calibration, and the area is:

Figure BDA0003082939880000182
Figure BDA0003082939880000182

其中,Vref_min表示参考电压的最小值,A表示电阻RA的阻值,B表示电阻RB的阻值,VOV_raw表示未经校准前的过压保护门限值,VOV_target表示过压保护门限值修调后的目标值。以上解释了所有表1中设计参数的计算方法。Among them, V ref_min represents the minimum value of the reference voltage, A represents the resistance value of the resistor RA, B represents the resistance value of the resistor RB , V OV_raw represents the overvoltage protection threshold value before calibration, and V OV_target represents the overvoltage protection The target value after threshold adjustment. The calculation methods for all the design parameters in Table 1 are explained above.

在给定了设计目标后,可以计算出所有电阻的比值,在满足这些比值的情况下,电阻的绝对值根据芯片的功耗、面积和版图匹配的要求以及便利性来确定,此后芯片设计工作即完成。After the design goals are given, the ratios of all resistors can be calculated. Under the condition that these ratios are met, the absolute value of the resistors is determined according to the requirements of the chip's power consumption, area and layout matching and convenience. After that, the chip design work That is done.

在一批芯片制作完成后进行测试,例如,其中的一颗芯片校准前测得过压门限为3.89v,根据本发明前述所提供的校准码生成方法,得出校准码为01110,通过激光烧断校准熔丝,将校准码写入该芯片。然后再次测量过压门限,过压门限预计应测得4.197v。然后检查过压迟滞门限、欠压门限和欠压迟滞门限。确认芯片在校准码写入后均符合设计要求,至此该芯片校准成功。Test after a batch of chips is fabricated. For example, the overvoltage threshold of one of the chips is 3.89v before calibration. According to the calibration code generation method provided above in the present invention, the calibration code is 01110. Break the calibration fuse and write the calibration code into the chip. Then measure the overvoltage threshold again, which is expected to measure 4.197v. Then check the overvoltage hysteresis threshold, undervoltage threshold, and undervoltage hysteresis threshold. Confirm that the chip meets the design requirements after the calibration code is written, and the chip has been successfully calibrated so far.

上述校准电路的校准方法,只需要通过调节一个可调电阻Rtrim就可以同时校准过压门限和欠压门限,修调过程所耗费的时间也会被大幅缩短,大大提高了校准效率。In the calibration method of the above calibration circuit, the overvoltage threshold and the undervoltage threshold can be calibrated at the same time only by adjusting an adjustable resistor R trim , and the time spent in the trimming process is also greatly shortened, which greatly improves the calibration efficiency.

在本说明书的描述中,参考术语“其中一个实施例”、“一个实施例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特征包含于本发明的至少一个实施例或示例中。在本说明书中,对上述术语的示意性描述不一定指的是相同的实施例或示例。In the description of this specification, description with reference to the terms "one of the embodiments", "one embodiment", etc. means that a particular feature, structure, material or feature described in connection with the embodiment or example is included in at least one implementation of the invention example or example. In this specification, schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

以上实施例的各技术特征可以进行任意的组合,为使描述简洁,未对上述实施例中的各个技术特征所有可能的组合都进行描述,然而,只要这些技术特征的组合不存在矛盾,都应当认为是本说明书记载的范围。The technical features of the above embodiments can be combined arbitrarily. For the sake of brevity, all possible combinations of the technical features in the above embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, all It is considered to be the range described in this specification.

以上实施例仅表达了本申请的几种实施方式,其描述较为具体和详细,但并不能因此而理解为对发明专利范围的限制。应当指出的是,对于本领域的普通技术人员来说,在不脱离本申请构思的前提下,还可做出若干变形和改进,都属于本申请保护范围。因此本申请专利的保护范围应以所附权利要求为准。The above examples only represent several embodiments of the present application, and the descriptions thereof are relatively specific and detailed, but should not be construed as a limitation on the scope of the invention patent. It should be noted that, for those skilled in the art, without departing from the concept of the present application, several modifications and improvements can be made, which all belong to the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be subject to the appended claims.

Claims (10)

1.一种校准电路,其特征在于,包括可调电阻Rtrim、电阻分压器、第一选路开关、第二选路开关、过压比较器CP1和欠压比较器CP2,所述电阻分压器包括依次串联的电阻RA、电阻RB、电阻RC、电阻RD和电阻RE1. A calibration circuit, characterized in that it comprises an adjustable resistor R trim , a resistor divider, a first routing switch, a second routing switch, an overvoltage comparator CP1 and an undervoltage comparator CP2, and the resistor The voltage divider includes a resistor RA , a resistor RB , a resistor RC , a resistor RD , and a resistor RE in series in sequence; 所述可调电阻Rtrim的一端用于电连接电池单元的正极,所述可调电阻Rtrim的另一端电连接所述电阻RA的一端,所述电阻RE的另一端用于电连接所述电池单元的负极与地端;One end of the adjustable resistor R trim is used to electrically connect the positive electrode of the battery unit, the other end of the adjustable resistor R trim is electrically connected to one end of the resistor R A , and the other end of the resistor R E is used to electrically connect the negative pole and the ground terminal of the battery unit; 所述电阻RA与所述电阻RB的连接处引出过压抽头并电连接至所述第一选路开关的一个输入端,所述电阻RB与所述电阻RC的连接处引出过压迟滞抽头并电连接至所述第一选路开关的另一个输入端,所述第一选路开关的输出端电连接所述过压比较器CP1的正相输入端;An overvoltage tap is drawn from the connection between the resistor RA and the resistor RB and is electrically connected to an input end of the first routing switch, and an overvoltage tap is drawn from the connection between the resistor RB and the resistor RC . a voltage hysteresis tap is electrically connected to the other input terminal of the first routing switch, and the output terminal of the first routing switch is electrically connected to the non-inverting input terminal of the overvoltage comparator CP1; 所述电阻RC与所述电阻RD的连接处引出欠压抽头并电连接至所述第二选路开关的一个输入端,所述电阻RD与所述电阻RE的连接处引出欠压迟滞抽头并电连接至所述第二选路开关的另一个输入端,所述第二选路开关的输出端电连接所述欠压比较器CP2的正相输入端;An undervoltage tap is drawn from the connection between the resistor RC and the resistor RD and is electrically connected to an input end of the second routing switch, and an undervoltage tap is drawn from the connection between the resistor RD and the resistor RE . a voltage hysteresis tap and is electrically connected to the other input terminal of the second routing switch, and the output terminal of the second routing switch is electrically connected to the non-inverting input terminal of the undervoltage comparator CP2; 所述过压比较器CP1和所述欠压比较器CP2的反相输入端均用于接入参考电压。Both the inverting input terminals of the overvoltage comparator CP1 and the undervoltage comparator CP2 are used to access the reference voltage. 2.根据权利要求1所述的校准电路,其特征在于,所述第一选路开关为二选一多路器Q1,所述二选一多路器Q1的控制信号输入端用于接入过压迟滞的使能信号;2. The calibration circuit according to claim 1, wherein the first routing switch is a two-to-one multiplexer Q 1 , and the control signal input end of the two-to-one multiplexer Q 1 is used for Access the enable signal of overvoltage hysteresis; 过压迟滞的所述使能信号用于指示所述二选一多路器Q1将所述过压迟滞抽头接通至所述过压比较器CP1。The enable signal of the overvoltage hysteresis is used to instruct the two-to- one multiplexer Q1 to turn on the overvoltage hysteresis tap to the overvoltage comparator CP1. 3.根据权利要求1或2所述的校准电路,其特征在于,所述第二选路开关为二选一多路器Q2,所述二选一多路器Q2的控制信号输入端用于接入欠压迟滞的使能信号;3. The calibration circuit according to claim 1 or 2, wherein the second routing switch is a two-to-one multiplexer Q 2 , and the control signal input end of the two-to-one multiplexer Q 2 Enable signal for accessing undervoltage hysteresis; 欠压迟滞的所述使能信号用于指示所述二选一多路器Q2将所述欠压迟滞抽头接通至所述欠压比较器CP2。The enable signal of the undervoltage hysteresis is used to instruct the two-to-one multiplexer Q2 to turn on the undervoltage hysteresis tap to the undervoltage comparator CP2. 4.根据权利要求3所述的校准电路,其特征在于,所述可调电阻Rtrim包括串联的32个节段电阻。4 . The calibration circuit according to claim 3 , wherein the adjustable resistor R trim comprises 32 segment resistors connected in series. 5 . 5.根据权利要求4所述的校准电路,其特征在于,各所述节段电阻为高阻多晶硅方块电阻。5 . The calibration circuit according to claim 4 , wherein each of the segment resistances is a high-resistance polysilicon sheet resistance. 6 . 6.一种电池保护芯片,其特征在于,包括芯片本体和权利要求1至5任一项所述的校准电路。6 . A battery protection chip, comprising a chip body and the calibration circuit according to any one of claims 1 to 5 . 7 . 7.一种校准电路的校准方法,其特征在于,用于校准权利要求1至5任一项所述的校准电路,所述方法包括以下步骤:7. A calibration method for a calibration circuit, characterized in that, for calibrating the calibration circuit described in any one of claims 1 to 5, the method comprises the following steps: 确定所述校准电路的设计参数;所述设计参数包括过压抽头分压比、欠压抽头分压比、过压迟滞抽头分压比、欠压迟滞抽头分压比、可调电阻比值和可调电阻分段数;Determine the design parameters of the calibration circuit; the design parameters include the overvoltage tap divider ratio, the undervoltage tap divider ratio, the overvoltage hysteresis tap divider ratio, the undervoltage hysteresis tap divider ratio, the adjustable resistance ratio and the adjustable resistance ratio. Adjust the number of resistor segments; 测量所述校准电路在未经校准前的过压保护门限值;measuring the overvoltage protection threshold value of the calibration circuit before calibration; 利用二进制校准码公式根据所述设计参数与所述过压保护门限值,计算得到校准码;所述校准码用于校准所述校准电路;Using a binary calibration code formula to calculate a calibration code according to the design parameters and the overvoltage protection threshold; the calibration code is used to calibrate the calibration circuit; 采用熔丝编程的方法,将所述校准码写入所述校准电路的芯片。Using the method of fuse programming, the calibration code is written into the chip of the calibration circuit. 8.根据权利要求7所述的校准电路的校准方法,其特征在于,所述二进制校准码公式为:8. The calibration method of the calibration circuit according to claim 7, wherein the binary calibration code formula is:
Figure FDA0003082939870000021
Figure FDA0003082939870000021
其中,VOV_target表示过压保护门限值修调后的目标值,VOV_raw表示所述未经校准前的过压保护门限值,Xstep表示修调步长。Wherein, V OV_target represents the target value of the overvoltage protection threshold value after adjustment, V OV_raw represents the uncalibrated overvoltage protection threshold value, and X step represents the adjustment step size.
9.根据权利要求7所述的校准电路的校准方法,其特征在于,所述可调电阻比值通过如下公式确定:9. The calibration method of the calibration circuit according to claim 7, wherein the adjustable resistance ratio is determined by the following formula:
Figure FDA0003082939870000031
Figure FDA0003082939870000031
其中,Xmax表示可调电阻的最大阻值,A表示电阻RA的阻值,B表示电阻RB的阻值,Vref_max表示参考电压的最大值,Vref_min表示参考电压的最小值;Among them, X max represents the maximum resistance value of the adjustable resistor, A represents the resistance value of the resistor RA, B represents the resistance value of the resistor RB, V ref_max represents the maximum value of the reference voltage, and V ref_min represents the minimum value of the reference voltage; 所述可调电阻分段数通过如下公式确定:The adjustable resistance segment number is determined by the following formula:
Figure FDA0003082939870000032
Figure FDA0003082939870000032
其中,Xstep表示修调步长,A表示电阻RA的阻值,Vref_max表示参考电压的最大值,P表示修调精度。Among them, X step represents the adjustment step length, A represents the resistance value of the resistor RA, V ref_max represents the maximum value of the reference voltage, and P represents the adjustment precision.
10.根据权利要求9所述的校准电路的校准方法,其特征在于,所述未经校准前的过压保护门限值的有效区域为:10. The method for calibrating a calibration circuit according to claim 9, wherein the valid area of the uncalibrated overvoltage protection threshold value is:
Figure FDA0003082939870000033
Figure FDA0003082939870000033
其中,Vref_min表示参考电压的最小值,A表示电阻RA的阻值,B表示电阻RB的阻值,VOV_raw表示所述未经校准前的过压保护门限值,VOV_target表示过压保护门限值修调后的目标值。Among them, V ref_min represents the minimum value of the reference voltage, A represents the resistance value of the resistor RA, B represents the resistance value of the resistor RB , V OV_raw represents the uncalibrated overvoltage protection threshold value, and V OV_target represents the overvoltage protection threshold. The target value after adjustment of the voltage protection threshold value.
CN202110572103.5A 2021-05-25 2021-05-25 Calibration circuit, battery protection chip and calibration method of calibration circuit Active CN113381084B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110572103.5A CN113381084B (en) 2021-05-25 2021-05-25 Calibration circuit, battery protection chip and calibration method of calibration circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110572103.5A CN113381084B (en) 2021-05-25 2021-05-25 Calibration circuit, battery protection chip and calibration method of calibration circuit

Publications (2)

Publication Number Publication Date
CN113381084A CN113381084A (en) 2021-09-10
CN113381084B true CN113381084B (en) 2022-07-01

Family

ID=77571959

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110572103.5A Active CN113381084B (en) 2021-05-25 2021-05-25 Calibration circuit, battery protection chip and calibration method of calibration circuit

Country Status (1)

Country Link
CN (1) CN113381084B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115327228A (en) * 2022-08-10 2022-11-11 石家庄华燕交通科技有限公司 Calibration device and method for tail end of safety regulation detection system of new energy automobile

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103490376A (en) * 2012-06-13 2014-01-01 西门子公司 Over-voltage and under-voltage protection device for single-phase source system
CN104849536A (en) * 2015-06-11 2015-08-19 中国人民解放军国防科学技术大学 Detection circuit for serial lithium battery pack protection chip
CN106253651A (en) * 2016-09-30 2016-12-21 国网江苏省电力公司南京供电公司 A kind of numerically controlled modularized microcomputer source over under-voltage protection circuit
CN109194099A (en) * 2018-11-20 2019-01-11 广州市力驰微电子科技有限公司 A kind of power supply monitoring management circuit of high-voltage starting circuit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7616461B2 (en) * 2007-01-12 2009-11-10 System General Corp. Control method and circuit with indirect input voltage detection by switching current slope detection
TWI600243B (en) * 2017-01-13 2017-09-21 茂達電子股份有限公司 Under voltage protection circuit and over voltage protection circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103490376A (en) * 2012-06-13 2014-01-01 西门子公司 Over-voltage and under-voltage protection device for single-phase source system
CN104849536A (en) * 2015-06-11 2015-08-19 中国人民解放军国防科学技术大学 Detection circuit for serial lithium battery pack protection chip
CN106253651A (en) * 2016-09-30 2016-12-21 国网江苏省电力公司南京供电公司 A kind of numerically controlled modularized microcomputer source over under-voltage protection circuit
CN109194099A (en) * 2018-11-20 2019-01-11 广州市力驰微电子科技有限公司 A kind of power supply monitoring management circuit of high-voltage starting circuit

Also Published As

Publication number Publication date
CN113381084A (en) 2021-09-10

Similar Documents

Publication Publication Date Title
CN102074766B (en) Battery pack and method of sensing voltage of the battery pack
JP4888041B2 (en) Battery voltage regulator
US8581657B2 (en) Voltage divider, constant voltage circuit using same, and trimming method in the voltage divider circuit
US7791367B1 (en) Driver with selectable output impedance
KR20090091128A (en) Current Limit Control with Current Limit Detector
CN105676933A (en) Quick-starting type digital low-voltage-difference voltage stabilizer
CN115598410B (en) Power consumption acquisition system and method
US9874479B2 (en) Temperature detection device
CN110132444B (en) Temperature detection circuit
CN113381084B (en) Calibration circuit, battery protection chip and calibration method of calibration circuit
US12143084B1 (en) Impedance adjusting circuit and impedance adjusting method for zero quotient calibration
CN108231123B (en) A kind of calibration method of semiconductor storage unit
CN110907807A (en) Chip circuit power consumption measuring circuit and method and chip
CN114740941B (en) Bandgap reference circuit, integrated circuit, and electronic device
CN215344364U (en) Power device drive circuit and electronic equipment
CN112072762B (en) Charging circuit and power terminal
US20110227538A1 (en) Circuits for generating reference signals
KR100536403B1 (en) Apparatus for charging battery with variable resistance
US6388449B1 (en) Circuit and method for auto-calibration of an active load
CN114094660B (en) Linear charging system with high-voltage turn-off function
CN116488276A (en) battery management chip
CN216387887U (en) USB device comprising low-cost voltage stabilizing circuit
CN113454562B (en) Compensation for binary weighted voltage divider
CN115236481A (en) A high-precision current detection method and its chip module
CN113315356A (en) Power device driving circuit

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant