CN113380719A - Ceramic substrate structure, intelligent power module and preparation method thereof - Google Patents
Ceramic substrate structure, intelligent power module and preparation method thereof Download PDFInfo
- Publication number
- CN113380719A CN113380719A CN202010157109.1A CN202010157109A CN113380719A CN 113380719 A CN113380719 A CN 113380719A CN 202010157109 A CN202010157109 A CN 202010157109A CN 113380719 A CN113380719 A CN 113380719A
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- Prior art keywords
- ceramic substrate
- lead frame
- fixing
- substrate structure
- ceramic
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- 239000000919 ceramic Substances 0.000 title claims abstract description 82
- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000003780 insertion Methods 0.000 claims abstract description 28
- 230000037431 insertion Effects 0.000 claims abstract description 27
- 239000004033 plastic Substances 0.000 claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 230000017525 heat dissipation Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 abstract description 7
- 229910000679 solder Inorganic materials 0.000 abstract description 7
- 238000005336 cracking Methods 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000006071 cream Substances 0.000 description 4
- 238000001746 injection moulding Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001680 brushing effect Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
本发明涉及一种陶瓷基板结构、智能功率模块及其制备方法及其制备方法，用于解决陶瓷基板塑封时出现溢胶的技术问题。本发明的陶瓷基板结构，包括陶瓷基板；以及固定部，其设置在陶瓷基板上，用于将引线框架的插入部固定。本发明通过在陶瓷基板的内部设置用于固定引脚框架的插入部的固定部，因此陶瓷基板与引脚框架的连接处位于陶瓷基板的内部，从而保证陶瓷基板与引脚框架平行，能够避免因刷锡膏厚度不均匀造成的陶瓷基板倾斜，导致在塑封时出现溢胶的现象并避免由于陶瓷基板与引脚框架贴合的过于紧密而造成翘曲甚至开裂的现象。
The invention relates to a ceramic substrate structure, an intelligent power module and a preparation method and the preparation method thereof, which are used to solve the technical problem of glue overflow during plastic sealing of the ceramic substrate. The ceramic substrate structure of the present invention includes a ceramic substrate; and a fixing part, which is arranged on the ceramic substrate and is used for fixing the insertion part of the lead frame. In the present invention, a fixing portion for fixing the insertion portion of the lead frame is provided inside the ceramic substrate, so the connection between the ceramic substrate and the lead frame is located inside the ceramic substrate, thereby ensuring that the ceramic substrate is parallel to the lead frame, avoiding the need for The ceramic substrate is inclined due to the uneven thickness of the solder paste, which leads to the phenomenon of glue overflow during plastic sealing and avoids the phenomenon of warping or even cracking due to the excessively tight bonding of the ceramic substrate and the lead frame.
Description
Technical Field
The invention relates to the field of electronic elements, in particular to a ceramic substrate structure, an intelligent power module and a preparation method thereof.
Background
The double-sided copper-clad ceramic substrate (DBC) has good heat-conducting property, and meanwhile, a copper layer on the front side of ceramic can be etched and used for manufacturing a circuit, so that the double-sided copper-clad ceramic substrate is widely used in the field of power semiconductor packaging at present, in a semiconductor injection molding process, the copper layer on the back side needs to be exposed out of the surface of epoxy resin for heat dissipation, the DBC can be completely attached to a lower die after a die is closed in the injection molding process, if the DBC is not tightly attached, resin overflows to the surface of the DBC, the heat dissipation performance of a module is influenced, and if the DBC is too tightly; since the DBC has been subjected to high temperature soldering before injection molding, there is also a substrate warpage problem at the edge position, and it is also impossible to make the DBC closely fit to the mold.
Disclosure of Invention
The invention provides a ceramic substrate structure, an intelligent power module and a preparation method thereof, which are used for solving the technical problem of glue overflow during plastic package of a ceramic substrate.
According to a first aspect of the invention, there is provided a ceramic substrate structure comprising:
a ceramic substrate; and
and a fixing portion provided inside the ceramic substrate and fixing the insertion portion of the lead frame.
Optionally, the fixing portion includes a groove, and the insertion portion of the lead frame is inserted into the groove and fixed to the groove.
Optionally, the ceramic substrate comprises:
a ceramic layer;
a first copper-clad layer disposed on a first surface of the ceramic layer for fabricating a circuit; and
and the second copper-coated layer is arranged on a second surface, opposite to the first surface, of the ceramic layer and is used for heat dissipation and packaging in cooperation with the lead frame.
Optionally, the groove is disposed on one side of the first copper-clad layer and extends to the other side thereof.
Optionally, the recess configuration is the same as the shape of the insert.
Optionally, the number of the grooves is one or more, and the insertion portions are arranged in one-to-one correspondence with the grooves.
Optionally, a welding material is provided at the junction of the groove and the insertion portion.
According to a second aspect of the present invention, the present invention provides a smart power module, further comprising a chip disposed on the ceramic substrate, the chip being electrically connected to the lead frame.
Optionally, the intelligent power module further includes a plastic package housing disposed outside the ceramic substrate.
According to a third aspect of the present invention, there is provided a method for preparing a smart power module, characterized by comprising the steps of:
a fixing portion matched with the insertion portion is provided in the ceramic substrate;
after the insertion part is arranged in the fixing part, welding materials are arranged at the joint of the fixing part and the insertion part and are fixed;
fixing a chip on the ceramic substrate, and electrically connecting the upper end of the chip with the lead frame;
and a plastic package shell is arranged outside the ceramic substrate.
Compared with the prior art, the invention has the advantages that: the fixing part used for fixing the inserting part of the lead frame is arranged in the ceramic substrate, so that the connecting part of the ceramic substrate and the lead frame is positioned in the ceramic substrate, the ceramic substrate is parallel to the lead frame, the ceramic substrate inclination caused by the uneven thickness of the solder paste can be avoided, the phenomenon of glue overflow is caused when the plastic package is carried out, and the phenomenon of warping and even cracking caused by the fact that the ceramic substrate is too tight to be attached to the lead frame is avoided.
Drawings
The invention will be described in more detail hereinafter on the basis of embodiments and with reference to the accompanying drawings.
FIG. 1 is a schematic structural view of a ceramic substrate in an embodiment of the present invention;
fig. 2a and 2b are schematic structural views of a lead frame in an embodiment of the present invention;
FIG. 3 is a schematic structural view of an insertion portion and a fixing portion in an embodiment of the present invention;
FIG. 4 is a front view of a ceramic substrate in an embodiment of the invention;
fig. 5 is a schematic structural view of a ceramic substrate of the related art.
Reference numerals: 1-ceramic substrate, 2-groove, 3-lead frame, 4-insertion part, 5-first copper-clad layer, 6-second copper-clad layer, 1-1 ceramic substrate.
Detailed Description
The invention will be further explained with reference to the drawings.
As shown in fig. 5, in the prior art, a ceramic substrate 1-1 is bonded to a lead of a lead frame through a first copper-clad layer, solder paste is applied to a bonding position of a second copper-clad layer and the lead frame for soldering, and then plastic package is performed; however, since the first copper-clad layer and the lead are not fixed, the ceramic substrate 1-1 and the lead frame may move or tilt with each other, and thus the solder paste may have uneven thickness when being brushed and the glue overflow phenomenon when being plastically packaged may occur.
As shown in fig. 1 and 3, the present invention provides a ceramic substrate structure, which includes: ceramic substrate 1 to and the fixed part of setting on ceramic substrate 1, can make the insertion part 4 of lead frame 3 insert and fix through the fixed part on ceramic substrate 1, and ceramic substrate 1 and lead frame 3 keep parallel, avoided like this that the tin cream thickness that probably causes is inhomogeneous when the joint of insertion part 4 and fixed part brushes the tin cream, and then makes ceramic substrate 1 slope, leads to its phenomenon that the glue that overflows appears when the plastic envelope.
As shown in fig. 1 and fig. 2a and fig. 2b, preferably, the fixing portion includes a groove 2, the groove 2 enables an insertion portion 4 of the lead frame 3 to be fixed, the fixing portion is designed as the groove 2 to facilitate preparation, the insertion portion 4 of the lead frame 3 is a pin, and the pin is inserted into the groove 2 to fix the lead frame 3.
In another embodiment, the groove 2 with the same height as the ceramic substrate 1 is formed in the lead frame 3, so that the ceramic substrate 1 can be inserted into the groove 2 and fixed, and the technical effects of uniform thickness of solder paste during solder paste brushing and no glue overflow during plastic package can be achieved.
Alternatively, as shown in fig. 4, the ceramic substrate 1 includes: a ceramic layer, a first copper-clad layer 5 and a second copper-clad layer 6.
Wherein the ceramic layer 1 is relatively lightweight and electrically non-conductive as a substrate.
A first copper-clad layer 5 is arranged on the first surface of the ceramic layer and used for manufacturing a circuit;
a second copper-clad layer 6 is provided on a second surface of the ceramic layer, opposite to the first surface, for heat dissipation and encapsulation in cooperation with the lead frame 3. First cover and be provided with recess 2 on the copper layer 5, insert recess 2 through lead frame 3's pin for lead frame 3 is fixed and parallel with ceramic substrate 1, has just also guaranteed that lead frame 3 and ceramic substrate 1's second covers copper layer 6 laminating, and then the second covers that copper layer 6 is even with tin cream thickness when 3 brush tin cream of lead frame, can not appear overflowing gluey phenomenon when the plastic envelope.
Optionally, the recess 2 is arranged on one side of the first copper-clad layer 5 and extends towards the other side thereof.
Alternatively, the recess 2 is configured identically to the shape of the insert 4, i.e. the dimensions of the recess 2 match the dimensions of the insert 4, ensuring that the insert 4 can be inserted into the recess 2 and fixed.
Alternatively, the number of the grooves 2 is one or more, and the insertion portions 4 are provided in one-to-one correspondence with the grooves 2.
Optionally, the groove 2 is arranged along the length direction of the first copper-clad layer 5. For example, the number of the grooves 2 is 4, and 4 grooves 2 are provided on the first copper clad layer 5 for ease of processing and production.
The invention also provides an intelligent power module, which further comprises a chip arranged on the ceramic substrate 1, wherein the chip is electrically connected with the lead frame 3.
The invention provides a method for preparing the intelligent power module, which comprises the following steps:
a first step of forming a fixing portion on the ceramic substrate 1, the size of the fixing portion being matched with that of the insertion portion 4;
secondly, after the insertion part 4 is inserted into the fixing part, brushing a layer of solder paste on the joint of the fixing part and the insertion part 4 for fixing;
and thirdly, fixing the chip on the ceramic substrate 1, connecting the upper end of the chip with the lead frame 3, and then carrying out structural plastic package on the ceramic substrate 1.
Fourthly, attaching a layer of tin to the insertion part 4 to facilitate welding;
in the fifth step, the excess portion of the lead frame 3 is cut off and press-formed using a die.
Optionally, the plastic package material is epoxy resin.
While the invention has been described with reference to a preferred embodiment, various modifications may be made and equivalents may be substituted for elements thereof without departing from the scope of the invention. In particular, the technical features mentioned in the embodiments can be combined in any way as long as there is no structural conflict. It is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010157109.1A CN113380719A (en) | 2020-03-09 | 2020-03-09 | Ceramic substrate structure, intelligent power module and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010157109.1A CN113380719A (en) | 2020-03-09 | 2020-03-09 | Ceramic substrate structure, intelligent power module and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113380719A true CN113380719A (en) | 2021-09-10 |
Family
ID=77568424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010157109.1A Pending CN113380719A (en) | 2020-03-09 | 2020-03-09 | Ceramic substrate structure, intelligent power module and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113380719A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS561550A (en) * | 1979-06-20 | 1981-01-09 | Toshiba Corp | Semiconductor device |
| JPH03283558A (en) * | 1990-03-30 | 1991-12-13 | Ngk Insulators Ltd | Method for fixing lead frame to semiconductor device |
| JPH043453A (en) * | 1990-04-19 | 1992-01-08 | Ngk Insulators Ltd | Semiconductor device and mounting of lead frame to semiconductor device |
| JP2001068582A (en) * | 1999-08-27 | 2001-03-16 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
| KR20020095053A (en) * | 2001-06-11 | 2002-12-20 | 페어차일드코리아반도체 주식회사 | Power module package improved heat radiating capability and method for manufacturing the same |
| JP2016146439A (en) * | 2015-02-09 | 2016-08-12 | Ｎｇｋエレクトロデバイス株式会社 | Package for housing high frequency semiconductor element |
| CN211828735U (en) * | 2020-03-09 | 2020-10-30 | 珠海格力电器股份有限公司 | Ceramic substrate structure and intelligent power module |
-
2020
- 2020-03-09 CN CN202010157109.1A patent/CN113380719A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS561550A (en) * | 1979-06-20 | 1981-01-09 | Toshiba Corp | Semiconductor device |
| JPH03283558A (en) * | 1990-03-30 | 1991-12-13 | Ngk Insulators Ltd | Method for fixing lead frame to semiconductor device |
| JPH043453A (en) * | 1990-04-19 | 1992-01-08 | Ngk Insulators Ltd | Semiconductor device and mounting of lead frame to semiconductor device |
| JP2001068582A (en) * | 1999-08-27 | 2001-03-16 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
| KR20020095053A (en) * | 2001-06-11 | 2002-12-20 | 페어차일드코리아반도체 주식회사 | Power module package improved heat radiating capability and method for manufacturing the same |
| JP2016146439A (en) * | 2015-02-09 | 2016-08-12 | Ｎｇｋエレクトロデバイス株式会社 | Package for housing high frequency semiconductor element |
| CN211828735U (en) * | 2020-03-09 | 2020-10-30 | 珠海格力电器股份有限公司 | Ceramic substrate structure and intelligent power module |
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