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CN113379692B - Method and device for calibrating OM and SEM coordinate relation, equipment and storage medium - Google Patents

Method and device for calibrating OM and SEM coordinate relation, equipment and storage medium Download PDF

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CN113379692B
CN113379692B CN202110607323.7A CN202110607323A CN113379692B CN 113379692 B CN113379692 B CN 113379692B CN 202110607323 A CN202110607323 A CN 202110607323A CN 113379692 B CN113379692 B CN 113379692B
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offset
mark
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CN113379692A (en
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甘远
薛磊
韩春营
俞宗强
蒋俊海
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Zhongke Jingyuan Microelectronic Technology Beijing Co Ltd
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Abstract

The application discloses a method for calibrating an OM and SEM coordinate relationship, which comprises the steps of reading the position and a mark pattern of the same mark point selected from the same standard sheet on a workbench, acquiring an OM image in an OM mode, acquiring a first mark point offset according to the OM mark pattern and the OM image, acquiring an SEM image in an SEM mode, wherein the SEM image is an image obtained by photographing after controlling the workbench to move to a second position, acquiring a second mark point offset according to the SEM mark pattern and the SEM image, and acquiring the OM and SEM coordinate relationship through the first mark point offset and the second mark point offset. Therefore, the method carries out automatic processing on the calibration process before electron beam detection and characteristic dimension measurement in the semiconductor manufacturing process, not only eliminates the influence of human factors and environmental factors (temperature and the like), but also improves the detection efficiency.

Description

Method and device for calibrating OM and SEM coordinate relation, equipment and storage medium
Technical Field
The present disclosure relates to the field of semiconductor manufacturing and inspection technologies, and in particular, to a method and apparatus for calibrating OM and SEM coordinate relationships, a device and a storage medium.
Background
In recent years, with the development of new technologies such as internet of things and artificial intelligence, the demand of semiconductor chips is increasing day by day, and the chip manufacturing process is becoming more and more delicate. Increasingly sophisticated manufacturing processes reduce chip power and also limit the production yield of semiconductor manufacturing. In the semiconductor manufacturing process of the technology node below 28nm, the production yield can be effectively improved by means of electron beam defect inspection (EBI). This step, which is necessary for calibration of the EBI apparatus before electron beam defect inspection, directly affects the defect inspection results, especially the calibration of the coordinate relationship between the optical microscope system (OM) and the scanning electron microscope System (SEM) of the EBI apparatus. Generally, the calibration of the OM and SEM coordinate relationship of the EBI apparatus is mainly performed manually, which is time and labor consuming and is prone to human error.
Disclosure of Invention
In view of the above, the present disclosure provides a method for calibrating an OM and SEM coordinate relationship, including:
reading the position and the mark pattern of the same mark point selected from the same standard film on a workbench;
wherein the position of the marking point on the workbench comprises: a first position in the OM mode and a second position in the SEM mode;
the marking pattern includes: OM mark pattern and SEM mark pattern under the SEM mode under OM mode;
obtaining an OM image in an OM mode; the OM image is an image obtained by photographing after the workbench is controlled to move to the first position;
obtaining a first mark point offset according to the OM mark pattern and the OM image;
acquiring an SEM image in an SEM mode; the SEM image is an image obtained by photographing after the workbench is controlled to move to the second position;
obtaining a second mark point offset according to the SEM mark pattern and the SEM image;
and obtaining the OM and SEM coordinate relation through the first mark point offset and the second mark point offset.
In a possible implementation manner, the mark point is a pattern with unique identification selected from the standard film;
the pattern is at least one of a single pattern and an array of patterns.
In one possible implementation manner, obtaining the first mark point offset according to the OM mark pattern and the OM image includes:
performing image matching on the OM marking pattern and the OM image to obtain a first similarity;
and obtaining the offset of the first mark point according to the first similarity.
In one possible implementation manner, obtaining the second mark point offset amount according to the SEM mark pattern and the SEM image includes:
carrying out image matching on the OM mark pattern and the OM image to obtain a second similarity;
and obtaining the offset of the second mark point according to the second similarity.
In a possible implementation manner, obtaining the OM and SEM coordinate relationship by using the first mark point offset and the second mark point offset includes:
obtaining an OM transverse offset according to the X value of the first mark point offset, the X value of the pixel size of the OM image and the X value of the position of the OM mark pattern;
obtaining an SEM transverse offset according to the X value of the first mark point offset, the X value of the pixel size of the SEM image and the X value of the position of the SEM mark pattern;
obtaining an OM longitudinal offset according to the Y value of the first mark point offset, the Y value of the pixel size of the OM image and the Y value of the position of the OM mark pattern;
obtaining the longitudinal SEM offset according to the Y value of the first mark point offset, the Y value of the pixel size of the SEM image and the Y value of the position of the SEM mark pattern;
and obtaining the OM and SEM coordinate relation through the OM transverse offset, the SEM transverse offset, the OM longitudinal offset and the SEM longitudinal offset.
In one possible implementation, obtaining the OM and SEM coordinate relationship by the OM lateral offset, the SEM lateral offset, the OM longitudinal offset, and the SEM longitudinal offset includes:
subtracting the SEM transverse offset from the OM transverse offset to obtain an OM and SEM transverse coordinate relation;
subtracting the SEM longitudinal offset from the OM longitudinal offset to obtain an OM and SEM longitudinal coordinate relation;
and obtaining the OM and SEM coordinate relation through the OM and SEM transverse coordinate relation and the OM and SEM longitudinal coordinate relation.
In a possible implementation manner, the step of obtaining the pixel size of the OM image and the pixel size of the SEM includes calibrating the pixel size of the OM image and the pixel size of the SEM by means of pixel size calibration.
According to another aspect of the present disclosure, there is provided an apparatus for calibrating OM and SEM coordinate relationship, wherein the mark pattern acquisition module, the OM image acquisition module, the first mark point offset calculation module, the SEM image acquisition module, the second mark point offset calculation module, and the coordinate relationship module;
the marking pattern acquisition module is configured to read the position and the marking pattern of the same marking point selected from the same standard plate on the workbench;
wherein the position of the marking point on the workbench comprises: a first position in the OM mode and a second position in the SEM mode;
the marking pattern includes: OM mark pattern and SEM mark pattern under the SEM mode under OM mode;
the OM image acquisition module is configured to acquire an OM image in an OM mode; the OM image is an image obtained by controlling the workbench to move to the first position and then shooting;
the first mark point offset calculation module is configured to obtain a first mark point offset according to the OM mark pattern and the OM image;
the SEM image acquisition module is configured to acquire an SEM image in an SEM mode; the SEM image is an image obtained by photographing after the workbench is controlled to move to the second position;
the second mark point offset calculating module is configured to obtain a second mark point offset according to the SEM mark pattern and the SEM image;
the coordinate relation module is configured to obtain the OM and SEM coordinate relation through the first mark point offset and the second mark point offset.
According to another aspect of the present disclosure, there is provided an apparatus for calibrating OM and SEM coordinate relationships, comprising:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to carry out the executable instructions to implement any of the methods described above.
According to another aspect of the present disclosure, there is provided a non-transitory computer readable storage medium having computer program instructions stored thereon, wherein the computer program instructions, when executed by a processor, implement the method of any of the preceding.
Reading the position and the mark pattern of the same mark point selected from the same standard film on the workbench, wherein the position of the mark point on the workbench comprises: a first position in the OM mode and a second position in the SEM mode, the mark pattern comprising: the OM image is obtained in the OM mode, the OM image is obtained after the control workbench moves to a first position, a first mark point offset is obtained according to the OM mark pattern and the OM image, the SEM image is obtained in the SEM mode, a second mark point offset is obtained according to the SEM mark pattern and the SEM image, and the OM and SEM coordinate relation is obtained through the first mark point offset and the second mark point offset. Therefore, the method carries out automatic processing aiming at the calibration process before electron beam detection and characteristic dimension measurement in the semiconductor manufacturing process, thereby not only eliminating the influence of human factors and environmental factors (temperature and the like), but also improving the detection efficiency.
Other features and aspects of the present disclosure will become apparent from the following detailed description of exemplary embodiments, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate exemplary embodiments, features, and aspects of the disclosure and, together with the description, serve to explain the principles of the disclosure.
FIG. 1 illustrates a flow chart of a method of calibrating OM and SEM coordinate relationships of an embodiment of the present disclosure;
FIG. 2 illustrates a schematic diagram of a method of calibrating OM and SEM coordinate relationships according to an embodiment of the disclosure;
FIG. 3 illustrates a standard slice schematic of a method of calibrating OM and SEM coordinate relationships according to an embodiment of the disclosure;
FIG. 4 illustrates an offset diagram of a method of calibrating OM and SEM coordinate relationships according to an embodiment of the disclosure;
FIG. 5 illustrates a block diagram of an apparatus for calibrating OM and SEM coordinate relationships according to an embodiment of the disclosure;
FIG. 6 illustrates a block diagram of an apparatus to calibrate OM and SEM coordinate relationships according to an embodiment of the disclosure.
Detailed Description
Various exemplary embodiments, features and aspects of the present disclosure will be described in detail below with reference to the accompanying drawings. In the drawings, like reference numbers can indicate functionally identical or similar elements. While the various aspects of the embodiments are presented in drawings, the drawings are not necessarily drawn to scale unless specifically indicated.
The word "exemplary" is used exclusively herein to mean "serving as an example, embodiment, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
Furthermore, in the following detailed description, numerous specific details are set forth in order to provide a better understanding of the present disclosure. It will be understood by those skilled in the art that the present disclosure may be practiced without some of these specific details. In some instances, methods, means, elements and circuits that are well known to those skilled in the art have not been described in detail so as not to obscure the present disclosure.
FIG. 1 shows a flow diagram of a method of calibrating OM and SEM coordinate relationships according to an embodiment of the disclosure. As shown in fig. 1, the method for calibrating the relationship between OM and SEM coordinates includes:
step S100, reading the position and the mark pattern of the same mark point on a workbench, wherein the position of the mark point on the workbench comprises: a first position in the OM mode and a second position in the SEM mode, the mark pattern comprising: an OM mark pattern in an OM mode and an SEM mark pattern in an SEM mode, step S200, an OM image is obtained in the OM mode, wherein the OM image is obtained by photographing after a control workbench moves to a first position, step S300, a first mark point offset is obtained according to the OM mark pattern and the OM image, step S400, an SEM image is obtained in the SEM mode, the SEM image is obtained by photographing after the control workbench moves to a second position, step S500, a second mark point offset is obtained according to the SEM mark pattern and the SEM image, and step S600, the OM and SEM coordinate relation is obtained through the first mark point offset and the second mark point offset.
Reading the position and the mark pattern of the same mark point selected from the same standard film on a workbench, wherein the position of the mark point on the workbench comprises the following steps: a first position in the OM mode and a second position in the SEM mode, the mark pattern comprising: the OM image is obtained in the OM mode, the OM image is obtained after the control workbench moves to a first position, a first mark point offset is obtained according to the OM mark pattern and the OM image, the SEM image is obtained in the SEM mode, a second mark point offset is obtained according to the SEM mark pattern and the SEM image, and the OM and SEM coordinate relation is obtained through the first mark point offset and the second mark point offset. Therefore, the method carries out automatic processing on the calibration process before electron beam detection and characteristic dimension measurement in the semiconductor manufacturing process, not only eliminates the influence of human factors and environmental factors (temperature and the like), but also improves the detection efficiency.
It should be noted that before the method of the present application is executed, the position coordinates and the pattern of the marking points on the standard sheet are manually determined in advance and written into the configuration file for subsequent automatic calibration. OM is an optical microscope system, SEM is a scanning electron microscope system, SEM is also called an Electron Optical System (EOS). In a possible implementation manner, first, the same mark point on the same standard chip is selected in the OM mode and the EOS mode, and the method of selecting the mark point is as follows: selecting a pattern with a unique identifier from a standard sheet, wherein the standard sheet comprises a plurality of circular patterns, a plurality of triangular patterns and a cross-shaped pattern, selecting the cross-shaped pattern, then creating a marking pattern according to the cross-shaped pattern, respectively forming an OM marking pattern (OMPattern) and an SEM marking pattern (EoPattern) and recording the position coordinates (x) of the marking pattern on the workbench OM 0 ,y OM 0 ) And (x) Eos 0 ,y Eos 0 )。
Specifically, referring to fig. 1, step S100 is executed to read the position and the mark pattern of the same mark point on the workbench, where the position of the mark point on the workbench includes: a first position in the OM mode and a second position in the SEM mode, the mark pattern comprising: an OM mark pattern in the OM mode and an SEM mark pattern in the SEM mode.
In one possible implementation, acquiring the OM mark pattern and the SEM mark pattern of the same standard plate includes: obtaining an OM marking pattern and an SEM marking pattern of the same marking point of the same standard sheet in a plurality of standard sheets, wherein the OM marking pattern and the SEM marking pattern are at least one of a single graph and a graph array, and the OM marking pattern and the SEM marking are obtainedThe coordinates of the pattern. For example, four standard sheets, which are respectively numbered 1, 2, 3, and 4, are fixed at four corners on the workbench, and by default, the standard sheet numbered 1 is used in the first calibration, and then an OM mark pattern and an SEM mark pattern on the same mark point of the standard sheet numbered 1 are obtained, where the OM mark pattern and the SEM mark pattern may be a single pattern or a pattern array, that is, a pattern array arranged by a plurality of single patterns. The position coordinates of the OM mark pattern and the SEM mark pattern are respectively (x) OM 0 ,y OM 0 ) And (x) Eos 0 ,y Eos 0 ) That is, the current stage position is (x) in the OM mode OM 0 ,y OM 0 ) In SEM mode, the current stage position is (x) Eos 0 ,y Eos 0 )。
Further, referring to fig. 1, step S200 is executed to acquire an OM image in the OM mode, where the OM image is an image obtained by taking a picture after the control workbench moves to the first position.
In one possible implementation, acquiring the OM image in the OM mode includes: and switching to an OM mode, sending a workbench moving instruction, moving the workbench to the position of the OM marking pattern, and sending a photographing instruction to acquire an OM image if the position of the workbench corresponds to the position of the OM marking pattern. For example, four standard sheets are fixed at four corners of the worktable, which are respectively numbered 1, 2, 3, and 4, and if the standard sheet with the number of 1 is used in the first calibration, an OM mark pattern and an SEM mark pattern on the same mark point of the standard sheet with the number of 1 are obtained, and the position coordinates of the OM mark pattern and the SEM mark pattern are respectively (x) OM 0 ,y OM 0 ) And (x) Eos 0 ,y Eos 0 ) In OM mode, a table moving command is sent to move the table to a mark point position (x) OM 0 ,y OM 0 ) Arriving at the stage (x) OM 0 ,y OM 0 ) And then, sending a photographing instruction to photograph and acquire an image to obtain an OM image (OMImage).
Further, referring to fig. 1, step S300 is executed to obtain a first mark point offset according to the OM mark pattern and the OM image.
In one possible implementation manner, obtaining the first mark point offset according to the OM mark pattern and the OM image includes: and carrying out image matching on the OM mark pattern and the OM image to obtain a first similarity, and obtaining a first mark point offset according to the first similarity. For example, four standard sheets are fixed at four corners of the worktable, which are respectively numbered 1, 2, 3, and 4, and if the standard sheet with the number of 1 is used in the first calibration, an OM mark pattern and an SEM mark pattern on the same mark point of the standard sheet with the number of 1 are obtained, and the position coordinates of the OM mark pattern and the SEM mark pattern are respectively (x) OM 0 ,y OM 0 ) And (x) Eos 0 ,y Eos 0 ) In OM mode, a work table moving command is sent to move the work table to the position of the mark point (x) OM 0 ,y OM 0 ) Arriving at the stage (x) OM 0 ,y OM 0 ) Then sending a photographing instruction to photograph to obtain an image to obtain an OM image (OMimage), moving the OM marking pattern on the OM image by taking each pixel as a unit, calculating the similarity after each movement, obtaining all similarities after the OM marking pattern is moved completely, searching the best similarity in all similarities, obtaining a coordinate value corresponding to the best similarity, and matching the coordinate value with the original coordinate value (x) OM 0 ,y OM 0 ) And performing subtraction to obtain a first mark point offset (OMPixelShift).
It should be noted that, the similarity calculation method may use a square difference matching method: the method adopts the square difference to carry out matching, the best matching value is 0, and the worse the matching, the larger the matching value; a correlation matching method may also be used: the method adopts multiplication operation, and the larger the numerical value is, the better the matching degree is; correlation coefficient matching methods can also be used: 1 represents a perfect match and-1 represents the worst match. Or other conventional techniques in the art may be used, and this application is not intended to be limiting.
In another possible implementation, the long bombardment of the standard plate by the electron beam causes the mark image to change, illustratively to be carbonized to black in the SEM mode, thereby affecting the image matching. In this way, the situation of image matching failure can occur, four standard sheets are fixed at four corners on the workbench, the standard sheets are respectively numbered 1, 2, 3 and 4, the standard sheet with the label 1 is used in the first calibration by default, an OM mark pattern and an SEM mark pattern on the same mark point of the standard sheet with the label 1 are obtained, and the position coordinates of the OM mark pattern and the SEM mark pattern are respectively (x) OM 0 ,y OM 0 ) And (x) Eos 0 ,y Eos 0 ) In OM mode, a table moving command is sent to move the table to a mark point position (x) OM 0 ,y OM 0 ) Arriving at the stage (x) OM 0 ,y OM 0 ) And then, sending a photographing instruction to photograph to obtain an image to obtain an OM image (OMimage), moving the OM image by using an OM marking pattern, moving each pixel as a unit, calculating the similarity after each movement, obtaining all similarities after the OM marking pattern is moved completely in the whole OM image, searching the best similarity in all the similarities, and switching to a standard film with the label of 2 to carry out the method disclosed by the invention if the best similarity is not found. Therefore, the pixel deviation number is accurately calculated, and the influence caused by human factors is successfully avoided.
It should be noted that, the number and arrangement of the standard sheets are not limited in the present application, and the required functions may be achieved.
Further, referring to fig. 1, step S400 is executed to acquire an SEM image in the SEM mode, where the SEM image is obtained by controlling the stage to move to the second position and then taking a picture.
In one possible implementation, acquiring the SEM image in the SEM mode includes: switching to an SEM mode, sending a workbench moving instruction, moving the workbench to the position of the SEM mark pattern, and sending a photographing instruction to obtain if the position of the workbench corresponds to the position of the SEM mark patternTaking SEM images. For example, four standard sheets are fixed at four corners of the workbench, which are respectively numbered 1, 2, 3 and 4, and if the standard sheet numbered 1 is used in the first calibration, an OM mark pattern and an SEM mark pattern on the same mark point of the standard sheet numbered 1 are obtained, and the position coordinates of the OM mark pattern and the SEM mark pattern are (x) respectively OM 0 ,y OM 0 ) And (x) Eos 0 ,y Eos 0 ) In the SEM mode, a stage moving command is sent to move the stage to the mark point position (x) Eos 0 ,y Eos 0 ) Arriving at the stage (x) Eos 0 ,y Eos 0 ) And then, sending a photographing instruction to photograph and acquire an image to obtain an SEM image (EosImage).
Further, referring to fig. 1, step S500 is performed to obtain a second mark point offset according to the SEM mark pattern and the SEM image.
In one possible implementation manner, obtaining the second mark point offset amount according to the SEM mark pattern and the SEM image includes: and carrying out image matching on the OM mark pattern and the OM image to obtain a second similarity, and obtaining a second mark point offset according to the second similarity. For example, four standard sheets are fixed at four corners of the worktable, which are respectively numbered 1, 2, 3, and 4, and if the standard sheet with the number of 1 is used in the first calibration, an OM mark pattern and an SEM mark pattern on the same mark point of the standard sheet with the number of 1 are obtained, and the position coordinates of the OM mark pattern and the SEM mark pattern are respectively (x) OM 0 ,y OM 0 ) And (x) Eos 0 ,y Eos 0 ) In the SEM mode, a stage moving command is sent to move the stage to the mark point position (x) Eos 0 ,y Eos 0 ) Arriving at the stage (x) Eos 0 ,y Eos 0 ) Then sending a photographing instruction to photograph to obtain an image to obtain an SEM image (EosImage), moving on the SEM image by taking each pixel as a unit by using the SEM mark pattern, and calculating the similarity after each movement, wherein the SEM mark pattern is arranged on the wholeObtaining all similarities after the SEM image is moved, searching the best similarity in all similarities, obtaining the coordinate value corresponding to the best similarity, and comparing the coordinate value with the original coordinate value (x) Eos 0 ,y Eos 0 ) And performing subtraction to obtain a second mark point offset (EoPixelShift).
Further, referring to fig. 1, step S600 is executed to obtain the OM and SEM coordinate relationship by the first mark point offset and the second mark point offset.
In one possible implementation manner, obtaining the OM and SEM coordinate relationship by using the first mark point offset and the second mark point offset includes: obtaining an OM transverse offset according to an X value of the first mark point offset, an X value of the pixel size of the OM image and an X value of the position of an OM mark pattern, obtaining an SEM transverse offset according to an X value of the second mark point offset, an X value of the pixel size of the SEM image and an X value of the position of the SEM mark pattern, obtaining an OM and SEM transverse coordinate relation by subtracting the SEM transverse offset from the OM transverse offset, obtaining an OM longitudinal offset according to a Y value of the first mark point offset, a Y value of the pixel size of the OM image and a Y value of the position of the OM mark pattern, obtaining a longitudinal offset according to a Y value of the second mark point offset, a Y value of the pixel size of the SEM image and a Y value of the position of the SEM mark pattern, obtaining an OM and SEM longitudinal coordinate relation by subtracting the SEM longitudinal offset from the OM, and obtaining the OM and SEM coordinate relation by subtracting the OM and SEM coordinate relation. For example, four standard sheets are fixed at four corners of the workbench, which are respectively numbered 1, 2, 3 and 4, and if the standard sheet numbered 1 is used in the first calibration, an OM mark pattern and an SEM mark pattern on the same mark point of the standard sheet numbered 1 are obtained, and the position coordinates of the OM mark pattern and the SEM mark pattern are (x) respectively OM 0 ,y OM 0 ) And (x) Eos 0 ,y Eos 0 ) In OM mode, a work table moving command is sent to move the work table to the position of the mark point (x) OM 0 ,y OM 0 ) Arriving at the stage (x) OM 0 ,y OM 0 ) After that, the air conditioner is started to work,sending a photographing instruction to photograph to obtain an OM image (OMimage), moving the OM marking pattern on the OM image by taking each pixel as a unit, calculating the similarity after each movement, obtaining all similarities after the OM marking pattern is moved completely, searching the best similarity in all similarities, obtaining a coordinate value corresponding to the best similarity, and matching the coordinate value with the original coordinate value (x) OM 0 ,y OM 0 ) Performing difference to obtain a first mark point offset (OMPixelShift), and in the SEM mode, sending a workbench moving instruction to move the workbench to the mark point position (x) Eos 0 ,y Eos 0 ) Arriving at the stage (x) Eos 0 ,y Eos 0 ) Then sending a photographing instruction to photograph to obtain an image to obtain an SEM image (EosImage), moving on the SEM image by using the SEM mark pattern, moving by taking each pixel as a unit, calculating the similarity after each movement, obtaining all similarities after the SEM mark pattern is moved in the whole SEM image, searching the best similarity in all similarities, obtaining a coordinate value corresponding to the best similarity, and matching the coordinate value with the original coordinate value (x) Eos 0 ,y Eos 0 ) And performing subtraction to obtain a second mark point offset (EoPixelShift). Calculating the offset of the first mark point and the offset of the second mark point through a first formula and a second formula:
the formula I is as follows:
Figure 984921DEST_PATH_IMAGE001
wherein, offsetX represents the relation of OM and SEM horizontal coordinates, OMPixelSizeX represents the X value of the pixel size of an OM image, OMPixelShiftX represents the X value of the offset of the first mark point, eosPixelSizeX represents the X value of the pixel size of an SEM image, and EosPixelShiftX represents the X value of the offset of the second mark point.
The formula II is as follows:
Figure 799293DEST_PATH_IMAGE002
the offset represents the relationship between OM and SEM longitudinal coordinates, OMPixelSizeY represents the Y value of the pixel size of an OM image, OMPixelShiftY represents the Y value of the offset of the first mark point, eosPixelSizeY represents the Y value of the pixel size of an SEM image, and EosPixelShiftY represents the Y value of the offset of the second mark point.
After obtaining OffsetX and OffsetY, the OM and SEM coordinate relationship is obtained. Therefore, the influence of human factors and environmental factors (temperature and the like) is eliminated, the detection efficiency is improved, and a foundation is laid for realizing full-automatic detection.
It should be noted that, the step of calibrating the pixel size of the OM image and the pixel size of the SEM by means of pixel size calibration is included when the pixel size of the OM image and the pixel size of the SEM are obtained, and the pixel size calibration method may adopt a conventional technical means in the art, and is not described here again.
In one possible implementation, the marker point (x) is surrounded in the OM mode OM 0 ,y OM 0 ) Four points (x) are selected for the horizontal and vertical directions as the center OM 0 ±δx,y OM δ y), the table is moved to the four point positions, and four images (Image _1, image _2, image _3, image _4) are taken. Wherein, at the four point positions, the mark can be seen in OM and SEM modes, the Image matching is carried out on the mark pattern and Image _1-Image _4 to obtain PixelShift _1-PixelShift _4, and the pixel size is calculated by a formula three and a formula four:
the formula III is as follows:
Figure 418493DEST_PATH_IMAGE003
the formula four is as follows:
Figure 419947DEST_PATH_IMAGE004
further, the mark point (x) is surrounded in the SEM mode Eos 0 ,y Eos 0 ) For the center, four points (x) are selected in total in the horizontal and vertical directions 0 ±δx,y 0 δ y), the table is moved to the four spot positions, and four images (Image _5, image _6, image _7, image _8) are taken. Wherein, at the four point positions, the mark can be seen in OM and SEM modes, the mark pattern is matched with the Image _1-Image _4 to obtain PixelShift _5-PixelShift _8, and the pixel size is calculated by a formula five and a formula six:
the formula five is as follows:
Figure 415585DEST_PATH_IMAGE005
formula six:
Figure 818885DEST_PATH_IMAGE006
this gives OMPixelSizeX, OMPixelSizeY, eosPixelSizeX, eosPixelSizeY.
It should be noted that, preferably, the above-mentioned step of pixel calibration needs to be performed first, and then the method of calibrating the coordinate relationship between OM and SEM of the present disclosure needs to be performed.
Further, in one possible implementation, the method may also be used for coarse calibration of a feature size measurement (CDSEM) device.
It should be noted that, although the method for calibrating the relationship between OM and SEM coordinates of the present disclosure is described above by taking the above steps as examples, the skilled person in the art can understand that the present disclosure should not be limited thereto. In fact, the user can flexibly set the method for calibrating the coordinate relationship between the OM and the SEM according to personal preference and/or practical application scenarios as long as the required functions are achieved.
In this way, by reading the position and the mark pattern of the same mark point on the workbench, which is selected from the same standard film, the position of the mark point on the workbench includes: a first position in the OM mode and a second position in the SEM mode, the mark pattern comprising: the OM image is obtained in the OM mode, the OM image is obtained after the control workbench moves to a first position, a first mark point offset is obtained according to the OM mark pattern and the OM image, the SEM image is obtained in the SEM mode, a second mark point offset is obtained according to the SEM mark pattern and the SEM image, and the OM and SEM coordinate relation is obtained through the first mark point offset and the second mark point offset. Therefore, the method carries out automatic processing aiming at the calibration process before electron beam detection and characteristic dimension measurement in the semiconductor manufacturing process, thereby not only eliminating the influence of human factors and environmental factors (temperature and the like), but also improving the detection efficiency.
Further, according to another aspect of the present disclosure, an apparatus 100 for calibrating the OM and SEM coordinate relationship is also provided. Since the operation principle of the apparatus 100 for calibrating the OM and SEM coordinate relationship of the server according to the embodiment of the present disclosure is the same as or similar to the principle of the method for calibrating the OM and SEM coordinate relationship according to the embodiment of the present disclosure, repeated descriptions are omitted. Referring to fig. 5, the apparatus 100 for calibrating OM and SEM coordinate relationship according to the embodiment of the present disclosure includes a marker pattern acquisition module 110, an OM image acquisition module 120, a first marker offset calculation module 130, an SEM image acquisition module 140, a second marker offset calculation module 150, and a coordinate relationship module 160;
a mark pattern acquisition module 110 configured to read a position and a mark pattern of the same mark point on the workbench, which are selected from the same standard sheet;
wherein, the position of the mark point on the workbench comprises: a first position in the OM mode and a second position in the SEM mode;
the marking pattern includes: OM mark pattern and SEM mark pattern under the SEM mode under OM mode;
an OM image acquiring module 120 configured to acquire an OM image in an OM mode; the OM image is an image obtained by photographing after the control workbench moves to a first position;
a first mark point offset calculation module 130 configured to obtain a first mark point offset according to the OM mark pattern and the OM image;
an SEM image acquiring module 140 configured to acquire an SEM image in an SEM mode; the SEM image is an image obtained by photographing after the control workbench moves to a second position;
a second mark point offset calculation module 150 configured to obtain a second mark point offset according to the SEM mark pattern and the SEM image;
and the coordinate relation module 160 is configured to obtain the OM and SEM coordinate relation through the first mark point offset and the second mark point offset.
Still further, in accordance with another aspect of the present disclosure, there is also provided an apparatus 200 for calibrating OM and SEM coordinate relationships. Referring to fig. 6, an apparatus 200 for calibrating OM and SEM coordinate relationships according to embodiments of the present disclosure includes a processor 210 and a memory 220 for storing instructions executable by the processor 210. Wherein the processor 210 is configured to execute the executable instructions to implement any of the methods for calibrating OM and SEM coordinate relationships described above.
Here, it should be noted that the number of the processors 210 may be one or more. Meanwhile, in the apparatus 200 for calibrating the OM and SEM coordinate relationship according to the embodiment of the present disclosure, an input device 230 and an output device 240 may be further included. The processor 210, the memory 220, the input device 230, and the output device 240 may be connected via a bus, or may be connected via other means, which is not limited herein.
The memory 220, which is a computer-readable storage medium, may be used to store software programs, computer-executable programs, and various modules, such as: the method for calibrating the OM and SEM coordinate relationship in the embodiment of the disclosure corresponds to a program or a module. Processor 210 executes various functional applications and data processing of device 200 that calibrate the OM and SEM coordinate relationships by running software programs or modules stored in memory 220.
The input device 230 may be used to receive an input number or signal. Wherein the signal may be a key signal generated in connection with user settings and function control of the device/terminal/server. The output device 240 may include a display device such as a display screen.
According to another aspect of the present disclosure, there is also provided a non-transitory computer readable storage medium having stored thereon computer program instructions which, when executed by the processor 210, implement any of the methods of calibrating OM and SEM coordinate relationships described above.
The foregoing description of the embodiments of the present disclosure has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein is chosen in order to best explain the principles of the embodiments, the practical application, or improvements made to the technology in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.

Claims (9)

1. A method of calibrating OM and SEM coordinate relationships, comprising:
reading the position and the mark pattern of the same mark point selected from the same standard film on the workbench;
wherein the position of the marking point on the workbench comprises: a first position in the OM mode and a second position in the SEM mode;
the marking pattern includes: OM mark pattern and SEM mark pattern under the SEM mode under OM mode;
obtaining an OM image in an OM mode; the OM image is an image obtained by controlling the workbench to move to the first position and then shooting;
obtaining a first mark point offset according to the OM mark pattern and the OM image;
acquiring an SEM image in an SEM mode; the SEM image is an image obtained by photographing after controlling the workbench to move to the second position;
obtaining a second mark point offset according to the SEM mark pattern and the SEM image;
obtaining the OM and SEM coordinate relation through the first mark point offset and the second mark point offset;
when obtaining the OM and SEM coordinate relationship by the first mark point offset and the second mark point offset, the method includes:
obtaining an OM transverse offset according to the X value of the first mark point offset, the X value of the pixel size of the OM image and the X value of the position of the OM mark pattern;
obtaining the SEM transverse offset according to the X value of the first mark point offset, the X value of the pixel size of the SEM image and the X value of the position of the SEM mark pattern;
obtaining an OM longitudinal offset according to the Y value of the first mark point offset, the Y value of the pixel size of the OM image and the Y value of the position of the OM mark pattern;
obtaining the longitudinal SEM offset according to the Y value of the first mark point offset, the Y value of the pixel size of the SEM image and the Y value of the position of the SEM mark pattern;
and obtaining the OM and SEM coordinate relation through the OM transverse offset, the SEM transverse offset, the OM longitudinal offset and the SEM longitudinal offset.
2. The method of claim 1, wherein the marking points are patterns selected from the standard plate with unique identification;
the pattern is at least one of a single pattern and an array of patterns.
3. The method of claim 1 or 2, wherein deriving a first marker point offset from the OM marker pattern and the OM image comprises:
carrying out image matching on the OM mark pattern and the OM image to obtain a first similarity;
and obtaining the offset of the first mark point according to the first similarity.
4. The method according to claim 1 or 2, wherein obtaining a second marker point offset from the SEM marker pattern and the SEM image comprises:
performing image matching on the SEM mark pattern and the SEM image to obtain a second similarity;
and obtaining the offset of the second mark point according to the second similarity.
5. The method of claim 1, wherein obtaining the OM and SEM coordinate relationship from the OM lateral offset, the SEM lateral offset, the OM longitudinal offset, and the SEM longitudinal offset comprises:
subtracting the SEM transverse offset from the OM transverse offset to obtain the relationship between OM and SEM transverse coordinates;
subtracting the SEM longitudinal offset from the OM longitudinal offset to obtain the relationship between OM and SEM longitudinal coordinates;
and obtaining the OM and SEM coordinate relation through the OM and SEM transverse coordinate relation and the OM and SEM longitudinal coordinate relation.
6. The method of claim 1, wherein obtaining the pixel size of the OM image and the pixel size of the SEM image comprises calibrating the pixel size of the OM image and the pixel size of the SEM image by means of pixel size calibration.
7. A device for calibrating the coordinate relationship between an OM and an SEM is characterized in that a marking pattern acquisition module, an OM image acquisition module, a first marking point offset calculation module, an SEM image acquisition module, a second marking point offset calculation module and a coordinate relationship module are arranged;
the marking pattern acquisition module is configured to read the position and the marking pattern of the same marking point selected from the same standard plate on the workbench;
wherein the position of the marking point on the workbench comprises: a first position in the OM mode and a second position in the SEM mode;
the marking pattern includes: OM mark pattern and SEM mark pattern under the SEM mode under OM mode;
the OM image acquisition module is configured to acquire an OM image in an OM mode; the OM image is an image obtained by photographing after the workbench is controlled to move to the first position;
the first mark point offset calculation module is configured to obtain a first mark point offset according to the OM mark pattern and the OM image;
the SEM image acquisition module is configured to acquire an SEM image in an SEM mode; the SEM image is an image obtained by photographing after controlling the workbench to move to the second position;
the second mark point offset calculation module is configured to obtain a second mark point offset according to the SEM mark pattern and the SEM image;
the coordinate relation module is configured to obtain the OM and SEM coordinate relation through the first mark point offset and the second mark point offset;
the coordinate relationship module, when obtaining the OM and SEM coordinate relationship through the first mark point offset and the second mark point offset, is specifically configured to:
obtaining an OM transverse offset according to the X value of the first mark point offset, the X value of the pixel size of the OM image and the X value of the position of the OM mark pattern;
obtaining an SEM transverse offset according to the X value of the first mark point offset, the X value of the pixel size of the SEM image and the X value of the position of the SEM mark pattern;
obtaining an OM longitudinal offset according to the Y value of the first mark point offset, the Y value of the pixel size of the OM image and the Y value of the position of the OM mark pattern;
obtaining the longitudinal SEM offset according to the Y value of the first mark point offset, the Y value of the pixel size of the SEM image and the Y value of the position of the SEM mark pattern;
and obtaining the OM and SEM coordinate relation through the OM transverse offset, the SEM transverse offset, the OM longitudinal offset and the SEM longitudinal offset.
8. An apparatus for calibrating OM and SEM coordinate relationships, comprising:
a processor;
a memory for storing processor-executable instructions;
wherein the processor is configured to carry out the method of any one of claims 1 to 6 when executing the executable instructions.
9. A non-transitory computer readable storage medium having stored thereon computer program instructions, wherein the computer program instructions, when executed by a processor, implement the method of any one of claims 1 to 6.
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