CN113363222B - Semiconductor packaging structure with radiating fin and preparation method thereof - Google Patents
Semiconductor packaging structure with radiating fin and preparation method thereof Download PDFInfo
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- CN113363222B CN113363222B CN202010152816.1A CN202010152816A CN113363222B CN 113363222 B CN113363222 B CN 113363222B CN 202010152816 A CN202010152816 A CN 202010152816A CN 113363222 B CN113363222 B CN 113363222B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention provides a semiconductor packaging structure with a radiating fin and a preparation method thereof, wherein the method comprises the following steps: bonding the chip on the upper surface of the packaging substrate, forming a heat conducting lead of an arc-shaped vertical line, wherein the first end chip surface of the heat conducting lead is connected, and the second end of the heat conducting lead is connected with a solder ball; forming a plastic package material layer of the plastic package chip and the heat conducting leads; forming a heat conducting adhesive layer on the surface of the plastic packaging material layer, wherein the heat conducting adhesive layer is connected with the solder balls on the second ends of the heat conducting leads; and forming a heat dissipation layer on the surface of the heat conduction adhesive layer. The heat dissipation area of the heat dissipation layer is increased by forming the heat dissipation layer on the outer surface of the plastic package material layer, and meanwhile, heat is transferred to the heat dissipation layer through the heat conduction leads, so that the heat dissipation efficiency of the chip is effectively improved; in addition, the heat conducting wires are directly formed, so that the welding wires and parts do not need to be cut off, and the manufacturing cost is effectively reduced; meanwhile, the heat conducting leads are connected with the heat conducting adhesive layer through solder balls, so that the contact area between the heat conducting leads and the heat radiating layer is further increased, and the heat radiating efficiency is improved.
Description
Technical Field
The present invention relates to the field of semiconductor packaging technology, and in particular, to a semiconductor packaging structure with a heat sink and a method for manufacturing the same.
Background
At present, the rapid development of electronic information technology and the continuous improvement of people's consumption level are that the functions of single electronic equipment are increasingly diversified and the sizes are increasingly miniaturized, so that the concentration of chips and functional components in the internal structure of the electronic equipment is continuously increased and the critical dimensions (Critical Dimension, i.e. line width) of the devices are continuously reduced, which brings great challenges to the semiconductor packaging industry.
With the demand for slimness, shortness and miniaturization of electronic products, semiconductor packages such as Ball Grid Array (BGA) which can shrink Integrated Circuits (ICs) and have high density and multiple pins are becoming one of the mainstream in the packaging market. However, since such semiconductor packages provide higher density of electronic circuits (ElectronicCircuits) and electronic components (ElectronicComponents), the heat generated during operation is also higher; in addition, the semiconductor package is formed by coating a semiconductor chip (referred to as Ball grid array Plastic package, PBGA, plastic Ball GRID ARRAY) with an encapsulant having poor thermal conductivity, so that the performance of the semiconductor chip is often affected due to poor heat dissipation efficiency. In order to improve the Heat dissipation efficiency of the semiconductor package, adding a Heat Sink (HeatSlug, heatBlock) to the PBGA package structure is proposed.
Fig. 1 shows a conventional PBGA package structure with heat sinks added. This package structure, while adding a heat sink in the package structure in consideration of heat dissipation, the heat sink 14 extends from the package substrate 11 to above the chip 12 through the support connections of several brackets; however, this structure has the problem that the heat generated by the chip 12 needs to reach the heat sink 14 through the conduction of the plastic package material layer 13, and the plastic package material layer 13 is usually made of resin, so that the heat conduction performance is relatively poor, and the heat dissipation effect of the package structure is poor; meanwhile, in this package structure, after the chip 12 is bonded to the package substrate 11, the heat sink 14 is first installed, and then the plastic package of the plastic package material layer 13 is performed, and the plastic package material layer 13 is usually formed by solidifying a liquid plastic package material, so that the plastic package material is likely to overflow onto the surface of the heat sink 14 during the plastic package process, resulting in a decrease in the heat dissipation effect of the heat sink 14, and finally, a decrease in the electrical performance caused by the heat dissipation defect.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a semiconductor package structure with a heat sink and a method for manufacturing the same, which are used for solving the problems of the prior art that the performance of the package structure is reduced due to poor heat dissipation effect.
To achieve the above and other related objects, the present invention provides a method for manufacturing a semiconductor package structure having a heat sink, the method comprising:
Providing a packaging substrate, bonding a chip on the upper surface of the packaging substrate, and forming a heat conduction lead of an arc-shaped vertical line, wherein the heat conduction lead is provided with a first end and a second end which are opposite, the first end is connected with the surface of the chip through a wire bonding convex block, and the second end is connected with a solder ball;
forming a plastic packaging material layer for plastic packaging the chip and the heat conducting leads, wherein the surface of the plastic packaging material layer exposes the solder balls on the second ends of the heat conducting leads;
forming a heat conducting adhesive layer on the surface of the plastic packaging material layer, wherein the heat conducting adhesive layer is connected with the solder balls on the second ends of the heat conducting leads;
And forming a heat dissipation layer on the surface of the heat conduction glue layer.
Optionally, the heat conducting glue layer is a conductive material layer.
Optionally, the heat dissipation layer has a non-planar surface structure.
Optionally, the heat dissipation layer includes a metal body layer and a coating layer disposed on the metal body layer.
Optionally, the chip is bonded to the upper surface of the package substrate by bonding wires.
Optionally, the step of forming the heat conductive wire of the arc-shaped upright wire includes:
Providing a bonding wire and a chopper, wherein the chopper fixes the position of the bonding wire, forms a solder ball at the tail end of the bonding wire, and welds the solder ball to a bonding pad on the surface of the chip;
Deforming the joint of the welding wire and the welding ball by the chopper to generate cracks;
Moving the riving knife upwards along the vertical direction by a preset distance, wherein the preset distance defines the length of the heat conducting lead, and enabling the riving knife to reciprocate along an arc-shaped track while keeping the riving knife in the vertical direction so as to enable a welding line with the preset distance to generate internal stress, thereby presenting an arc-shaped vertical line;
moving the chopper and the bonding wires upwards along the vertical direction, and breaking the bonding wires to form bonding wire convex blocks, wherein the bonding wires below the chopper are arc-shaped vertical wires;
forming the solder balls on the second ends of the heat conducting leads at the tail ends of the bonding wires in arc-shaped vertical lines;
welding the upper end of the welding wire in an arc-shaped vertical line to the wire bonding convex block through the chopper, and tilting the welding wire in the arc-shaped vertical line upwards under the action of welding pressure;
And breaking the bonding wires by the chopper, thereby forming the heat conducting leads on the bonding bumps.
Optionally, the step of deforming the portion of the bonding wire connected to the solder ball by the cleaver to generate a crack includes: and moving the riving knife upwards along the vertical direction, and then moving the riving knife rightwards or leftwards along the horizontal direction, so that cracks are generated.
Optionally, the step of forming the heat conductive wire on the bonding bump by breaking the bonding wire with the chopper includes: and enabling the chopper to move upwards along the vertical direction, and then pulling the bonding wire upwards through the chopper until the bonding wire is broken, so that the heat-conducting lead is formed.
Optionally, the step of forming the plastic package material layer includes:
forming a plastic packaging material on the upper surfaces of the packaging substrate, the chip and the heat conducting leads;
And grinding and removing the plastic packaging material until the solder balls on the second ends of the heat conducting leads are exposed, so as to form a plastic packaging material layer for plastic packaging the chip and the heat conducting leads.
The invention also provides a semiconductor packaging structure with a radiating fin, which comprises:
Packaging a substrate;
A chip bonded to an upper surface of the package substrate;
the plastic packaging material layer is positioned on the upper surfaces of the packaging substrate and the chip and is used for plastic packaging of the chip;
the heat conducting adhesive layer is positioned on the upper surface of the plastic packaging material layer;
the heat dissipation layer is positioned on the upper surface of the heat conduction adhesive layer;
The heat conducting wire of the arc-shaped vertical line is provided with a first end and a second end which are opposite, the first end is connected with the surface of the chip through a wire bonding convex block, the second end is connected with a solder ball, and the solder ball is connected with the heat conducting adhesive layer.
Optionally, the chip is bonded to the upper surface of the package substrate through a bonding wire, and the bonding wire and the heat conducting wire are made of the same material.
Optionally, the heat conducting glue layer is a conductive material layer.
Optionally, the heat dissipation layer has a non-planar surface structure.
Optionally, the heat dissipation layer includes a metal body layer and a coating layer disposed on the metal body layer.
As described above, the semiconductor package structure with the heat sink and the method for manufacturing the same of the present invention have the following beneficial effects: the heat dissipation area of the heat dissipation layer is increased by forming the heat dissipation layer on the outer surface of the plastic package material layer, and meanwhile, the heat emitted by the chip is transferred to the large-area heat dissipation layer through the heat conduction wires; in addition, compared with the wire bonding process in the prior art, the heat conduction wire can be formed only by cutting off redundant wires and part of the packaging substrate, the heat conduction wire forming method directly forms the heat conduction wire of the arc-shaped vertical wire, does not need to cut off the bonding wires and part of the packaging substrate, reduces the process complexity, saves raw materials, can realize the wire bonding process by using the existing machine equipment, and effectively reduces the manufacturing cost; meanwhile, the heat conducting leads are connected with the heat conducting adhesive layer through solder balls, so that the contact area between the heat conducting leads and the heat radiating layer can be further increased, and the heat radiating efficiency is improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a semiconductor package according to the prior art.
Fig. 2 is a flow chart of a method for manufacturing a semiconductor package structure with a heat sink according to the present invention.
Fig. 3 to 11 are schematic cross-sectional views showing structures obtained at respective steps in the method for manufacturing a semiconductor package with a heat sink according to the present invention, wherein fig. 4 to 7 are schematic flow diagrams showing the method for manufacturing a thermally conductive wire in a dotted line a of fig. 3, and fig. 11 is a schematic cross-sectional view showing the semiconductor package with a heat sink according to the present invention.
Description of element reference numerals
11. Packaging substrate
12. Chip
13. Plastic packaging material layer
14. Heat sink
21. Packaging substrate
22. Chip
23. Heat conducting wire
24. Solder ball
25. Plastic packaging material
26. Plastic packaging material layer
27. Heat conducting glue layer
28. Heat dissipation layer
29. Bonding wire
31. Bonding wire
32. Chopper knife
33. Welding pad
34. Wire bonding bump
35. Wire clamp
S1 to S4 steps
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 2 to fig. 11. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex, and the "upper" and "lower" in the present embodiment do not have strict limitation meaning but are merely for descriptive convenience.
Example 1
As shown in fig. 2, the present embodiment provides a method for manufacturing a semiconductor package structure with a heat sink, by forming the heat dissipation layer on the outer surface of the plastic package material layer entirely, the heat dissipation area of the heat dissipation layer is increased, and simultaneously, the heat dissipated from the chip is transferred to the heat dissipation layer with a large area through the heat conducting wire, and since the heat conducting wire (metal material) has better heat conduction performance than the plastic package material layer (insulating material), the heat dissipation efficiency of the chip is effectively improved by arranging the heat conducting wire and combining the heat dissipation layer with a large area; in addition, compared with the wire bonding process in the prior art, the heat conducting wire can be formed by cutting off redundant wires and part of the packaging substrate, the heat conducting wire directly forming the arc-shaped vertical wire is simple in process, extra waste materials are not needed, the heat conducting wire can be realized by using the existing machine equipment, the manufacturing cost is effectively reduced, meanwhile, the heat conducting wire is connected with the heat conducting adhesive layer through the solder balls, the contact area between the heat conducting wire and the heat dissipation layer can be further increased, and the heat dissipation efficiency is improved.
Fig. 3 to 11 are schematic structural views illustrating steps of preparing a semiconductor package structure having a heat sink.
As shown in fig. 2 and 3, step S1 is first performed to provide a package substrate 21, bond a chip 22 to an upper surface of the package substrate 21, and form a heat conductive wire 23 with an arc-shaped vertical line, wherein the heat conductive wire 23 has a first end and a second end opposite to each other, the first end is connected to the surface of the chip 22 through a bonding bump 34, and the second end is connected to a solder ball 24.
The material of the package substrate 21 may be selected according to different needs, for example, may be a non-metal material such as silicon, glass, silicon oxide, ceramic, polymer, etc., or may be a metal material such as copper, or may be a composite material of two or more kinds, and the shape may be a circle, a square, or any other desired shape, and the surface area thereof is based on the capability of carrying the subsequent structure. In this embodiment, for the subsequent packaging, the surface area of the packaging substrate 21 is larger than the surface area of the chip 22, for example, the area of the packaging substrate 21 is 1.1-2 times the surface area of the chip 22.
By way of example, the chip 22 may include various types of active or passive components, the number of which may be one or more. In this embodiment, the chip 22 is bonded to the package substrate 21 by a wire bonding process (wire bonding), that is, by a bonding wire 29, two ends of the bonding wire 29 are connected to the package substrate 21 and the chip 22, and a bonding pad (not shown) may be disposed on a surface of the chip 22 and connected to the bonding wire 29. The material of the bonding wire 29 is preferably gold wire because gold wire has not only good conductivity and oxidation resistance but also very good ductility and easy ball formation, etc., thus contributing to the improvement of the performance of the semiconductor package structure. Of course, in other examples, the chip 22 may be soldered to the package substrate 21 by a solder bonding (die bonding), which is not strictly limited in this embodiment.
As an example, the bonding wire 29 and the heat conductive wire 23 are made of the same material, such as gold wire, so that the heat conductive wire 23 and the bonding wire 29 can be formed in the same process, which is advantageous for simplifying the manufacturing process. Of course, in other examples, the heat conducting wire 23 may be other metal wires with good heat conducting performance, such as copper wires, aluminum wires, copper alloy wires, and the like, which are not strictly limited in the present embodiment. The heat generated by the chip 22 can be quickly transferred to the heat conducting adhesive layer 27 to be formed later through the heat conducting wires 23 and finally emitted through the heat dissipation layer formed on the heat conducting adhesive layer 27, and compared with an insulating material, the heat conducting wire 23 is adopted to increase the heat conducting path of the chip, so that the heat dissipation efficiency of the chip 22 is effectively improved; in addition, the upper ends of the heat conducting wires 23 are connected with the solder balls 24, so that the contact area with the heat dissipation layer 28 can be further increased, and the heat dissipation efficiency can be improved. It should be noted that the number of the heat conducting wires 23 and the bonding wires 29 may be plural, for example, 2 or more, and the specific number may be set according to different product requirements, which is not limited herein.
As shown in fig. 4 to 7, a flow chart of a preparation method of an embodiment of the heat conductive wire 23 in the dotted line a of fig. 3 is as follows:
As shown in fig. 4 and 5, a bonding wire 31, a chopper 32 and a wire clamp 35 are provided, the chopper 32 fixes the position of the bonding wire 31, a solder ball 24 is formed at the end of the bonding wire 31, and the solder ball 24 is soldered to a pad 33 on the surface of the chip 22.
The steps specifically comprise: the bonding wire 31 is clamped by the chopper 32 and the wire clamp 35 (shown in fig. 4 a); then melting the end of the bonding wire 31 by electric spark at the end of the bonding wire 31 to form a solder ball 24 (shown in 4 b); the wire clamp 35 is then released and the wire 31 is moved upward so that the solder balls 24 are located at the end of the riving knife 32 (as shown in fig. 4 c); the clamp 35 is then closed (as shown in fig. 5 a); the solder balls 24 are then soldered to the pads 33 (as shown in fig. 5 b) by the riving knife 32; the wire clamp 35 is then released and the riving knife 32 is moved up a distance in the vertical direction (as shown in fig. 5 c) to form a wire bond bump 34 on the bond pad 33 that is in eutectic connection with the bond pad.
As shown in fig. 6a, the bonding wire 31 and the bonding bump 34 are deformed by the cleaver 32 to generate a crack.
The steps specifically comprise: the riving knife 32 is moved upward in the vertical direction, and then the riving knife 32 is moved rightward or leftward in the horizontal direction, so that the portion where the bonding wire 31 and the bonding bump 34 are connected is deformed to generate a crack.
As shown in fig. 6b, the riving knife 32 is then moved up in the vertical direction by a preset distance defining the length of the heat conductive wire 23, and the riving knife 32 is reciprocated along the circular arc-shaped locus while maintaining the vertical direction of the riving knife 32, so that the bonding wire 31 of the preset distance generates internal stress to thereby appear as an arc-shaped upright wire.
As shown in fig. 6c, the riving knife 32 and the bonding wire 31 are then moved upward in the vertical direction to break the bonding wire 31, thereby forming the bonding bump 34, and the bonding wire 31 under the riving knife 32 is an arc-shaped upright wire. It should be noted that, when the bonding wire 31 is broken, the wire clamp 35 is kept in a clamped state, and the shape of the bonding wire 31 below the riving knife 32 in fig. 6c has a part of reduced radian compared with that of the bonding wire 31 in fig. 6b due to the upward pulling action in the vertical direction, but the shape of the bonding wire 31 below the riving knife 32 in fig. 6c can be accurately controlled to be an arc-shaped upright wire by presetting the upward pulling force, which can be set according to specific process parameters and is not limited herein.
As shown in fig. 6d, the solder balls 24 on the second ends of the heat conductive wires 23 are then formed at the ends of the bonding wires 31 in the form of arc-like upright wires. Specifically, the solder balls 24 may be formed by melting the ends of the bonding wires 31 by electric spark at the ends of the bonding wires 31. Here, the clip 35 is held in a clamped state when the solder balls 24 are formed.
As shown in fig. 7a, the upper end of the bonding wire 31 in the arc-shaped standing wire is then bonded to the bonding bump 34 by the cleaver 32, and the bonding wire 31 in the arc-shaped standing wire is tilted upward by the bonding pressure, thereby forming the shape of the heat conductive wire 23 in fig. 3. Here, the wire clamp 35 remains in a loosened state during the welding process.
As shown in fig. 7b and 7c, finally, the bonding wire 31 is broken by the chopper 32, so that the heat conductive wire 23 is formed on the bonding bump 34.
The steps specifically comprise: holding the clamp 35 open, moving the riving knife 32 upward in a vertical direction, and then clamping the clamp 35 (as shown in fig. 7 b); the bonding wire 31 is then pulled upward by the chopper 32 until the bonding wire 31 is broken, thereby forming the heat conductive wire 23.
A preparation cycle of the heat conductive wire 23 is thus formed. Compared with the wire bonding process in the prior art, the vertical heat conduction wire can be formed by cutting off redundant wires and part of the packaging substrate, and the method directly forms the arc-shaped vertical wires without cutting off bonding wires and part of the packaging substrate, so that the process complexity is reduced, raw materials are saved, the wire bonding process can be realized by using the existing machine equipment, and the manufacturing cost is effectively reduced; meanwhile, the heat conducting leads are connected with the heat conducting adhesive layer through solder balls, so that the contact area between the heat conducting leads and the heat radiating layer can be further increased, and the heat radiating efficiency is improved.
As shown in fig. 2 and 9, step S2 is then performed to form a molding material layer 26 for molding the chip 22 and the heat conductive wires 23, and the surface of the molding material layer 26 exposes the solder balls 24 on the second ends of the heat conductive wires 23.
As shown in fig. 8 and 9, the step of forming the molding material layer 26 includes, as an example:
Forming a molding material 25 (as shown in fig. 8) on the package substrate 21, the chip 22 and the upper surfaces of the heat conductive wires 23;
The plastic packaging material 25 is removed by grinding until the solder balls 24 on the second ends of the heat conducting wires 23 are exposed, so as to form a plastic packaging material layer 26 (as shown in fig. 9) for plastic packaging the chip 22 and the heat conducting wires 23.
As an example, the material of the molding material layer 26 may include, but is not limited to, one or more of polyimide, silicone, and epoxy, and the process of forming the molding material layer 26 may include, but is not limited to, one or more of an inkjet process, a dispensing process, a compression molding process, a transfer molding process, a liquid seal molding process, a vacuum lamination process, or a spin coating process.
As shown in fig. 2 and 10, step S3 is performed to form a thermal conductive adhesive layer 27 on the surface of the plastic package material layer 26, where the thermal conductive adhesive layer 27 is connected to the solder balls 24 on the second ends of the thermal conductive wires 23.
As an example, the thermal conductive adhesive layer 27 may be an insulating material layer, such as a silica adhesive layer; however, in this embodiment, the heat conductive adhesive layer 27 is preferably a material layer with an electrical conductive function, such as an electrical conductive silver adhesive layer, so that the heat dissipation layer 28 is grounded through the heat conductive adhesive layer 27, so that the heat dissipation layer 28 can play a role of electromagnetic shielding while realizing the heat dissipation function, and the performance of the semiconductor package device is improved; the process of forming the thermal conductive adhesive layer 27 may include, but is not limited to, one or more of an inkjet process, a dispensing process, a compression molding process, a transfer molding process, a liquid seal molding process, a vacuum lamination process, or a spin coating process; in this embodiment, an inkjet or dispensing process is preferred, so that the heat-conducting glue layer 27 with a non-planar surface structure is more easily formed, and thus more process options are available in the subsequent process of forming the heat-dissipating layer 28 with a non-planar surface structure, for example, the heat-dissipating layer 28 with a metal body layer and a coating layer on the metal body layer may be formed by a physical vapor deposition or electroplating process, and the heat-conducting glue layer 27 has a non-planar surface structure, so that the formed heat-dissipating layer 28 naturally has a non-planar surface structure, so that the heat-dissipating layer 28 has a larger heat-dissipating surface area, and deformation caused by thermal expansion and/or adverse effects caused by stress may be avoided; and simultaneously, the heat conducting adhesive layer 27 and the heat dissipating layer 28 can be tightly attached to each other, so that the heat of the chip 22 is conducted into the heat dissipating layer 28 through the heat conducting adhesive layer 27 more quickly and finally dissipated to the external environment.
As shown in fig. 2 and 11, finally, step S4 is performed to form a heat dissipation layer 28 on the surface of the thermal conductive adhesive layer 27.
As an example, the heat dissipation layer 28 may be made of any material with good heat dissipation performance. In this embodiment, the heat dissipation layer 28 includes a metal body layer and a plating layer on the metal body layer as an example; the metal main body layer may be a copper layer, an aluminum layer, a stainless steel layer, a copper alloy layer or a composite layer of multiple metal layers, the coating layer may be a nickel layer, a chromium layer or other coating layers with good antirust and anticorrosive properties, and the coating layer is used for protecting the metal main body layer so as to prevent the heat dissipation performance of the heat dissipation layer 28 from being reduced due to oxidation and/or corrosion of the metal main body layer, and ensure the heat dissipation performance of the heat dissipation layer. The surface area of the heat dissipation layer 28 is generally not smaller than the surface area of the plastic package material layer 26, that is, the heat dissipation layer 28 completely covers the plastic package material layer 26, and the edge of the heat dissipation layer 28 may also be bent downwards to partially cover the side wall of the plastic package material layer 26, so that the heat dissipation area of the heat dissipation layer 28 may be increased, the heat dissipation path of the semiconductor package structure may be increased, and meanwhile, the connection between the heat dissipation layer 28 and the plastic package material layer 26 may be more stable, so as to improve the performance of the semiconductor package structure.
In another example, the heat dissipation layer 28 is a graphene layer; the graphene not only can conduct electricity, but also has good heat dissipation performance, and meanwhile has good oxidation resistance, corrosion resistance and other characteristics. By using graphene as the heat dissipation layer 28, the thickness of the heat dissipation layer 28 can be reduced, which is advantageous for further miniaturization of the semiconductor package device. If the heat dissipation layer 28 is a graphene layer, the heat dissipation layer 28 may be formed by a transfer molding method.
As an example, the heat dissipation layer 28 has a non-flat surface structure, that is, the surface of the heat dissipation layer 28 is not flat, for example, may be a rugged structure, or may be a corrugated structure, or may be any other irregular shape, which is not strictly limited in this embodiment. The surface of the heat dissipation layer 28 is set to be non-flat, on one hand, the surface area of the heat dissipation layer 28 can be increased to increase the heat dissipation area, and meanwhile, the non-flat surface structure is arranged to avoid the problems of expansion deformation, stress and the like of the heat dissipation layer 28 when being heated, so that the performance of the semiconductor packaging structure is ensured.
Example two
The present embodiment provides a semiconductor package structure with a heat sink, which can be manufactured by the manufacturing method of the first embodiment, but is not limited to the manufacturing method of the first embodiment, so long as the semiconductor package structure can be formed. The beneficial effects achieved by the device structure are described in the first embodiment, and will not be described in detail.
As shown in fig. 11, the package structure includes:
A package substrate 21;
a chip 22 bonded to the upper surface of the package substrate 21;
A plastic sealing material layer 26 located on the upper surfaces of the package substrate 21 and the chip 22, and plastic sealing the chip 22;
a heat conducting glue layer 27, which is located on the upper surface of the plastic packaging material layer 26;
the heat dissipation layer 28 is positioned on the upper surface of the heat conducting glue layer 27;
The heat conducting wires 23 of the arc-shaped upright wires have opposite first ends and second ends, the first ends are connected with the surface of the chip 22 through the wire bonding bumps 34, the second ends are connected with a solder ball 24, and the solder ball 24 is connected with the heat conducting glue layer 27.
As an example, the chip 22 is bonded to the upper surface of the package substrate 21 by bonding wires 29, and the bonding wires 29 and the heat conductive wires 23 are made of the same material.
The thermal conductive paste layer 27 is a conductive material layer, and may be, for example, a conductive silver paste layer.
As an example, the heat dissipation layer 28 has a non-planar surface structure.
As an example, the heat dissipation layer 28 includes a metal body layer and a plating layer on the metal body layer.
In summary, the present invention provides a semiconductor package structure with a heat sink and a method for manufacturing the same, wherein the heat dissipation area of the heat dissipation layer is increased by forming the heat dissipation layer on the outer surface of the plastic package material layer, and meanwhile, the heat emitted from the chip is transferred to the heat dissipation layer with a large area through the heat conduction wire, and the heat conduction wire (metal material) has better heat conduction performance than the plastic package material layer (insulating material), so that the heat dissipation efficiency of the chip is effectively improved by arranging the heat conduction wire and combining the heat dissipation layer with a large area; in addition, compared with the wire bonding process in the prior art, the heat conduction wire can be formed only by cutting off redundant wires and part of the packaging substrate, the heat conduction wire forming method directly forms the heat conduction wire of the arc-shaped vertical wire, does not need to cut off the bonding wires and part of the packaging substrate, reduces the process complexity, saves raw materials, can realize the wire bonding process by using the existing machine equipment, and effectively reduces the manufacturing cost; meanwhile, the heat conducting leads are connected with the heat conducting adhesive layer through solder balls, so that the contact area between the heat conducting leads and the heat radiating layer can be further increased, and the heat radiating efficiency is improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (13)
1. A method for manufacturing a semiconductor package having a heat sink, the method comprising:
Providing a packaging substrate, bonding a chip on the upper surface of the packaging substrate, and forming a heat conduction lead of an arc-shaped vertical line, wherein the heat conduction lead is provided with a first end and a second end which are opposite, the first end is connected with the surface of the chip through a wire bonding convex block, and the second end is connected with a solder ball;
forming a plastic packaging material layer for plastic packaging the chip and the heat conducting leads, wherein the surface of the plastic packaging material layer exposes the solder balls on the second ends of the heat conducting leads;
forming a heat conducting adhesive layer on the surface of the plastic packaging material layer, wherein the heat conducting adhesive layer is connected with the solder balls on the second ends of the heat conducting leads;
Forming a heat dissipation layer on the surface of the heat conduction glue layer;
wherein the step of forming the heat conductive wire of the arc-shaped upright wire comprises:
Providing a bonding wire and a chopper, wherein the chopper fixes the position of the bonding wire, forms a solder ball at the tail end of the bonding wire, and welds the solder ball to a bonding pad on the surface of the chip;
Deforming the joint of the welding wire and the welding ball by the chopper to generate cracks;
Moving the riving knife upwards along the vertical direction by a preset distance, wherein the preset distance defines the length of the heat conducting lead, and enabling the riving knife to reciprocate along an arc-shaped track while keeping the riving knife in the vertical direction so as to enable a welding line with the preset distance to generate internal stress, thereby presenting an arc-shaped vertical line;
moving the chopper and the bonding wires upwards along the vertical direction, and breaking the bonding wires to form bonding wire convex blocks, wherein the bonding wires below the chopper are arc-shaped vertical wires;
forming the solder balls on the second ends of the heat conducting leads at the tail ends of the bonding wires in arc-shaped vertical lines;
welding the upper end of the welding wire in an arc-shaped vertical line to the wire bonding convex block through the chopper, and tilting the welding wire in the arc-shaped vertical line upwards under the action of welding pressure;
And breaking the bonding wires by the chopper, thereby forming the heat conducting leads on the bonding bumps.
2. The method for manufacturing a semiconductor package with a heat sink according to claim 1, wherein: the heat conducting glue layer is a conductive material layer.
3. The method for manufacturing a semiconductor package with a heat sink according to claim 1, wherein: the heat dissipation layer has a non-planar surface structure.
4. The method for manufacturing a semiconductor package with a heat sink according to claim 1, wherein: the heat dissipation layer comprises a metal main body layer and a coating layer positioned on the metal main body layer.
5. The method for manufacturing a semiconductor package with a heat sink according to claim 1, wherein: the chip is bonded to the upper surface of the package substrate through bonding wires.
6. The method of manufacturing a semiconductor package with a heat spreader according to claim 1, wherein the step of deforming the portion of the bonding wire connected to the solder ball by the cleaver to generate a crack comprises: and moving the riving knife upwards along the vertical direction, and then moving the riving knife rightwards or leftwards along the horizontal direction, so that cracks are generated.
7. The method of manufacturing a semiconductor package with a heat spreader according to claim 1, wherein the step of forming the thermally conductive leads on the bonding bumps by breaking the bonding wires with the dicing saw, comprises: and enabling the chopper to move upwards along the vertical direction, and then pulling the bonding wire upwards through the chopper until the bonding wire is broken, so that the heat-conducting lead is formed.
8. The method of manufacturing a semiconductor package with a heat sink according to claim 1, wherein the step of forming the molding material layer comprises:
forming a plastic packaging material on the upper surfaces of the packaging substrate, the chip and the heat conducting leads;
And grinding and removing the plastic packaging material until the solder balls on the second ends of the heat conducting leads are exposed, so as to form a plastic packaging material layer for plastic packaging the chip and the heat conducting leads.
9. A semiconductor package structure with a heat sink, wherein the semiconductor package structure with a heat sink according to any one of claims 1 to 8 is manufactured by a method for manufacturing the semiconductor package structure with a heat sink, the package structure comprising:
Packaging a substrate;
A chip bonded to an upper surface of the package substrate;
the plastic packaging material layer is positioned on the upper surfaces of the packaging substrate and the chip and is used for plastic packaging of the chip;
the heat conducting adhesive layer is positioned on the upper surface of the plastic packaging material layer;
the heat dissipation layer is positioned on the upper surface of the heat conduction adhesive layer;
The heat conducting wire of the arc-shaped vertical line is provided with a first end and a second end which are opposite, the first end is connected with the surface of the chip through a wire bonding convex block, the second end is connected with a solder ball, and the solder ball is connected with the heat conducting adhesive layer.
10. The semiconductor package with heat sink as recited in claim 9, wherein: the chip is bonded to the upper surface of the package substrate through bonding wires, and the bonding wires and the heat conducting wires are made of the same material.
11. The semiconductor package with heat sink as recited in claim 9, wherein: the heat conducting glue layer is a conductive material layer.
12. The semiconductor package with heat sink as recited in claim 9, wherein: the heat dissipation layer has a non-planar surface structure.
13. The semiconductor package with heat sink as recited in claim 9, wherein: the heat dissipation layer comprises a metal main body layer and a coating layer positioned on the metal main body layer.
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| CN202010152816.1A CN113363222B (en) | 2020-03-06 | 2020-03-06 | Semiconductor packaging structure with radiating fin and preparation method thereof |
| US17/195,389 US11488925B2 (en) | 2020-03-06 | 2021-03-08 | Semiconductor package structure with heat sink and method preparing the same |
| US17/974,391 US11842976B2 (en) | 2020-03-06 | 2022-10-26 | Semiconductor package structure with heat sink and method preparing the same |
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| JP2570605B2 (en) * | 1993-11-15 | 1997-01-08 | 日本電気株式会社 | Semiconductor device |
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| CN101752327B (en) * | 2008-12-01 | 2011-11-16 | 矽品精密工业股份有限公司 | Semiconductor package with heat dissipation structure |
| EP2763167B1 (en) * | 2011-09-26 | 2016-06-29 | Fujitsu Limited | Heat-dissipating material and method for producing same, and electronic device and method for producing same |
| CN110504172B (en) * | 2018-05-16 | 2024-12-17 | 盛合晶微半导体(江阴)有限公司 | Vertical wire bonding structure, stacked chip packaging structure and method |
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| CN104201159A (en) * | 2014-08-08 | 2014-12-10 | 武汉新芯集成电路制造有限公司 | Method for improving radiating effect of bonding wafer |
| CN209880589U (en) * | 2019-06-21 | 2019-12-31 | 中芯长电半导体（江阴）有限公司 | Semiconductor packaging structure |
| CN211238224U (en) * | 2020-03-06 | 2020-08-11 | 中芯长电半导体（江阴）有限公司 | Semiconductor packaging structure with radiating fin |
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