CN113353899A - Preparation method of boron nitride nanotube, boron nitride nanotube and application of boron nitride nanotube - Google Patents
Preparation method of boron nitride nanotube, boron nitride nanotube and application of boron nitride nanotube Download PDFInfo
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 47
- 239000002071 nanotube Substances 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 24
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910001947 lithium oxide Inorganic materials 0.000 claims abstract description 19
- 239000002994 raw material Substances 0.000 claims abstract description 18
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 17
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 17
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000000843 powder Substances 0.000 claims abstract description 15
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011261 inert gas Substances 0.000 claims abstract description 7
- 238000005303 weighing Methods 0.000 claims abstract description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 229910052786 argon Inorganic materials 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000007866 anti-wear additive Substances 0.000 claims description 2
- 238000001125 extrusion Methods 0.000 claims description 2
- 239000000314 lubricant Substances 0.000 claims description 2
- 239000011224 oxide ceramic Substances 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 239000011214 refractory ceramic Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract 1
- 238000001878 scanning electron micrograph Methods 0.000 description 19
- 238000003917 TEM image Methods 0.000 description 14
- 238000001816 cooling Methods 0.000 description 13
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- 238000001514 detection method Methods 0.000 description 10
- 239000000047 product Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000002243 precursor Substances 0.000 description 7
- 238000004321 preservation Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 239000000543 intermediate Substances 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 3
- OFEAOSSMQHGXMM-UHFFFAOYSA-N 12007-10-2 Chemical compound [W].[W]=[B] OFEAOSSMQHGXMM-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003623 transition metal compounds Chemical class 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Abstract
The preparation method of the boron nitride nanotube comprises the following steps: weighing raw materials in a reactor, wherein the raw materials are a mixture of boron powder and lithium tungstate powder or a mixture of boron powder, lithium oxide powder and tungsten oxide powder; the reactor is placed in an inert gas environment, the temperature is raised to the reaction temperature, ammonia gas is introduced, the boron nitride nanotube is obtained after the reaction, the temperature is raised by a program of 2-30 ℃/min, and the reaction temperature is 1100-. Aiming at the defects of complicated process, high cost and the like of the current BNNTs preparation, the scheme can obtain the high-quality BNNTs by selecting proper raw material compositions in a simple horizontal tube furnace through a chemical vapor deposition method.
Description
Technical Field
The invention belongs to the technical field of boron nitride nanotube materials, and particularly relates to a preparation method and application of a boron nitride nanotube.
Background
Boron Nitride Nanotubes (BNNTs) are one-dimensional hollow structures similar to carbon nanotubes, wherein C atoms in the carbon nanotubes are replaced by B, N atoms, and B, N atoms are all sp atoms2Hybridization is carried out. BNNTs has excellent mechanical strength, thermal conductivity, high-temperature oxidation resistance, chemical stability and larger forbidden band width (5.5 eV), and the electrical property is not influenced by the pipe diameter and the handedness of the nanotube. These excellent properties allow BNNTs to be used as a thermal interface material,The high-temperature structural component, the high-strength composite material, the aerospace and other fields have wide application prospects. At present, the preparation method of BNNTs mainly comprises a ball-milling annealing method, an arc discharge method, a chemical vapor deposition method, a laser ablation method, a template method and the like, and compared with other methods which have high cost and unsatisfactory products, the chemical vapor deposition method is considered to be the method which is most likely to realize batch preparation due to low cost, simple operation and high product quality.
In the related patent document CN200910062722.9, alkaline earth metal boride is used as a boron source and transition metal compound is used as a catalyst, and the two are mixed, annealed and sintered for preparing BNNTs in batches; in CN200610036111.3, boron powder, calcium oxide and transition metal oxide are immersed in hydrochloric acid, then alkaline solution is added to obtain precipitate, then the precipitate is filtered, washed by water and dried to obtain a mixture, and finally the mixture is annealed, washed by acid and dried to obtain BNNTs. Both methods utilize both alkaline earth metals and transition compounds to aid in the growth of BNNTs, but both methods are cumbersome and time consuming and are not conducive to true commercial production. Furthermore, W proved to be a catalyst for the growth of BNNTs in arc discharge in 1995 (BORON NITRIDE NANOTUBES [ J ] Science,1995,269(5226): p.966-967), but the temperature of the current chemical vapor deposition method could not reach the melting point of W, while it was reported that only BORON NITRIDE nanosheets were obtained when using ((B and ammonium tungstate as precursors for direct growth) in a simple horizontal furnace CVD system, so W was considered to have no catalytic activity in its system for the growth of BORON NITRIDE NANOTUBES (the system of Songfeng E, Li C, Li T, et al. ammonium-transport-deposited growth of BORON NITRIDE NANOTUBES [ J ] Nanotechnology, 2018. B and Li2O gave a large number of NTs in a vertical furnace at 1350 ℃ 3h, but the experimental equipment of this method was not widespread, costly, and disadvantageous for production (Yang, growth of BORON NITRIDE NANOTUBES [ J ] and growth of BORON NITRIDE nanoparticles ,2011,22(14):145602).
Disclosure of Invention
The preparation method of the boron nitride nanotube effectively reduces the reaction temperature of the nanotube, fully improves the reaction efficiency of the product and improves the yield of the reaction by improving the raw material composition and the reaction route, thereby realizing the preparation process of the boron nitride nanotube with the advantages of simple operation, low cost, high efficiency, high product purity, good reproducibility and stability and the like.
The preparation method of the boron nitride nanotube comprises the following steps:
weighing raw materials in a reactor, wherein the raw materials are a mixture of boron powder and lithium tungstate powder or a mixture of boron powder, lithium oxide powder and tungsten oxide powder;
the reactor is placed in an inert gas environment, the temperature is raised to the reaction temperature, ammonia gas is introduced, the boron nitride nanotube is obtained after the reaction is finished, the temperature rise is a temperature rise program of 2-30 ℃/min, and the reaction temperature is 1100-.
The invention relates to an improvement of the preparation method of the boron nitride nanotube, wherein the inert gas is argon or nitrogen or helium.
The invention relates to an improvement of the preparation method of the boron nitride nanotube, and the reaction time after ammonia gas is introduced is 1-3 h. The introduction speed and the introduction amount of the ammonia gas and the inert gas in the implementation process of the scheme are specifically determined by the size of the reactor or the reaction speed. A gas flow of 200sccm can be selected, for example, in a 500mm reactor.
In the improvement of the preparation method of the boron nitride nanotube, the boron powder in the raw material is excessive.
The invention relates to an improvement of a preparation method of a boron nitride nanotube, when raw materials are a mixture of boron powder and lithium tungstate powder, the molar ratio is (4-7): 1.
The invention relates to an improvement of a preparation method of a boron nitride nanotube, when the raw material is a mixture of boron powder, lithium oxide powder and tungsten oxide powder, the molar ratio is 5 (0.1-2) to 1 or 5:1 (0.1-2).
The invention relates to an improvement of a preparation method of a boron nitride nanotube, wherein a reactor is a high-temperature resistant ceramic reactor.
The invention relates to an improvement of a preparation method of a boron nitride nanotube, wherein a reactor is an alumina crucible or a silicon nitride ceramic boat or a zirconium oxide ceramic boat.
The boron nitride nanotubes of the present application are obtained by the preparation method according to the foregoing.
The boron nitride nanotube obtained by the invention is applied to high-heat conduction materials, thermal interface materials, high-strength composite materials, high-temperature solid lubricants, extrusion anti-wear additives and anti-neutron radiation materials.
In the scheme of the application:
(1) reacting boron powder and lithium tungstate or boron powder, lithium oxide and tungsten oxide in a certain proportion and temperature range in the atmosphere of ammonia gas to obtain a large amount of BNNTs;
(2) boron powder and lithium tungstate or boron powder, lithium oxide and tungsten oxide obtain intermediate tungsten boride in the system, so that high-quality BNNTs are obtained at lower temperature and in shorter time compared with B and Li2O systems, and the fact that W has catalytic activity in the chemical vapor deposition method for preparing BNNTs is also shown.
(3) And the two precursors are intermediates for forming W2B5, and the intermediates react with Li-containing substances in the reaction to obtain the boron nitride nanotube.
A batch preparation method of boron nitride nanotubes comprises weighing boron powder and lithium tungstate or boron powder, lithium oxide and tungsten oxide in a certain proportion, and mixing into an alumina crucible; the alumina crucible can be replaced by a high-temperature resistant ceramic boat such as silicon nitride, zirconia and the like; placing the ceramic boat and the like filled with the raw materials in a chemical vapor deposition system, introducing inert gases such as argon or nitrogen and the like to remove air in the reaction system, then heating at a speed of 2-30 ℃/min, preferably 10 ℃/min, introducing ammonia at 1100-1300 ℃, preferably 1210 ℃, reacting for 2h at a reaction temperature of 1100-1300 ℃, preferably 1210 ℃, cooling to room temperature, and taking out a sample; the chemical vapor deposition system can be replaced by an atmospheric pressure chemical vapor deposition system and a low pressure chemical vapor deposition system.
The scheme of the invention has simple operation, low cost, high efficiency, high product purity, good reproducibility and stability, and:
(1) reacting boron powder and lithium tungstate or boron powder, lithium oxide and tungsten oxide in a certain proportion and temperature range in the atmosphere of ammonia gas to obtain a large amount of BNNTs;
(2) boron powder and lithium tungstate or boron powder, lithium oxide and tungsten oxide obtain intermediate tungsten boride in the system, so that high-quality BNNTs are obtained at lower temperature and in shorter time compared with B and Li2O systems, and the fact that W has catalytic activity in the chemical vapor deposition method for preparing BNNTs is also shown.
(3) And the two precursors are intermediates for forming W2B5, and the intermediates react with Li-containing substances in the reaction to obtain the boron nitride nanotube.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is an SEM image (a) and a TEM image (b) of a sample of example 1 and an SEM image (c) and a TEM image (d) of a sample of example 2;
FIG. 2 is an XRD pattern of a sample of example 1 of the present application;
FIG. 3 is an XRD pattern of both precursors in example 1 and example 2 of the present application;
FIG. 4 is SEM image (a is W2B5 and Li2O as precursors; B is W2B5 and Li as precursors) and TEM image (c) of a sample of example 4 of the present application;
fig. 5 is an SEM image of the sample of comparative example 1.
Detailed Description
The present invention will be described in detail below with reference to various embodiments. The embodiments are not intended to limit the present invention, and structural, methodological, or functional changes made by those skilled in the art according to the embodiments are included in the scope of the present invention.
The following examples and comparative examples illustrate the present process with a 300 ml reactor and 30 g feed mixture particles, but the reactor size and the amount of feed are not intended to limit the scope of the present process.
Example 1
In this example, boron powder and lithium tungstate in a molar ratio of 4:1 were weighed and placed in a horizontal tube furnace. Argon is firstly introduced to remove the air in the furnace chamber, the temperature is raised to 1100 ℃, and 200sccm NH is introduced3Temperature programming is carried out for 5 ℃/min to 1100-1300 ℃, heat preservation is carried out for 120min, NH is closed after the reaction is finished3And cooling to room temperature in Ar atmosphere. FIG. 1(a) SEM image of boron nitride nanotubes obtained from boron powder and lithium tungstate, showing that a large amount of boron nitride nanotubes are produced. FIG. 1(b) is a TEM image of the prepared boron nitride nanotube, which shows that the prepared boron nitride nanotube has better crystallization property. After the reaction, no boron-containing substance other than BN was contained in the residue, and the surface B had a very high utilization rate in the reaction (fig. 2 XRD).
Example 2
In this example, boron powder, lithium oxide, and tungsten oxide at a molar ratio of 5:1:1 were weighed and placed in a horizontal tube furnace. Argon gas is firstly introduced into the furnace chamber at 200sccm to remove air in the furnace chamber, the temperature is raised to 1210 ℃, and NH of 200sccm is introduced into the furnace chamber3Temperature programming is carried out for 5 ℃/min to 1210 ℃, heat preservation is carried out for 120min, NH is closed after the reaction is finished3And cooling to room temperature in Ar atmosphere. As shown in FIG. 1(c), SEM image of boron nitride nanotubes obtained from boron powder, lithium oxide and tungsten oxide shows that a large amount of boron nitride nanotubes are generated. FIG. 1(d) is a TEM image of the prepared boron nitride nanotubes, showing that the prepared boron nitride nanotubes have better crystallization properties.
Example 3
The two raw materials of the above example 1 and example 2 were annealed at 1210 deg.C for 2h and an argon flow rate of 200sccm, and the obtained product was confirmed to be mainly W by XRD detection2B5(FIG. 3).
By W2B50.6 g each and Li20.08g of O or 0.02g of Li are mixed to form a precursor. Then argon gas is introduced into the furnace chamber at 200sccm to remove air in the furnace chamber, the temperature is raised to 1210 ℃, and NH of 200sccm is introduced into the furnace chamber3Temperature programming is carried out for 5 ℃/min to 1210 ℃, heat preservation is carried out for 120min, NH is closed after the reaction is finished3And cooling to room temperature in Ar atmosphere. The sample obtainedThe product detection showed that the product was W as shown in FIG. 4(a)2B5And Li2And O, the SEM image of the obtained boron nitride nanotubes shows that a large amount of boron nitride nanotubes are generated. As shown in FIG. 4(b) W2B5And SEM images of boron nitride nanotubes obtained by Li, it can be seen that a large amount of boron nitride nanotubes are produced. Fig. 4(c) is a TEM image of the prepared boron nitride nanotube, showing that the prepared boron nitride nanotube has better crystallization properties.
Example 4
In this example, boron powder and lithium tungstate in a molar ratio of 7:1 were weighed and placed in a horizontal tube furnace. Argon is firstly introduced to remove the air in the furnace chamber, the temperature is raised to 1250 ℃, and 200sccm NH is introduced3Programmed heating to 5 ℃/min to 1300 ℃, heat preservation for 120min, and closing NH after reaction3And cooling to room temperature in Ar atmosphere. FIG. 1(a) SEM image of boron nitride nanotubes obtained from boron powder and lithium tungstate, showing that a large amount of boron nitride nanotubes are produced. The detection shows that a large amount of boron nitride nanotubes are generated from the SEM image of the boron nitride nanotubes. And the TEM image of the boron nitride nanotube shows that the prepared boron nitride nanotube has better crystallization property.
Example 5
In this example, boron powder and lithium tungstate in a molar ratio of 5:1 were weighed and placed in a horizontal tube furnace. Argon is firstly introduced to remove the air in the furnace chamber, the temperature is programmed to rise to 1200 ℃ at 5 ℃/min, and NH of 200sccm is introduced3Keeping the temperature for 120min, and closing NH after the reaction is finished3And cooling to room temperature in Ar atmosphere. FIG. 1(a) SEM image of boron nitride nanotubes obtained from boron powder and lithium tungstate, showing that a large amount of boron nitride nanotubes are produced. The detection shows that a large amount of boron nitride nanotubes are generated from the SEM image of the boron nitride nanotubes. And the TEM image of the boron nitride nanotube shows that the prepared boron nitride nanotube has better crystallization property.
Example 6
In this example, boron powder and lithium tungstate in a molar ratio of 6:1 were weighed and placed in a horizontal tube furnace. Firstly introducing helium to remove air in the furnace chamber, raising the temperature by a program to 1300 ℃ at a speed of 13 ℃/min, and introducing 200scNH of cm3Keeping the temperature for 60min, and closing NH after the reaction is finished3And cooling to room temperature in Ar atmosphere. The detection shows that a large amount of boron nitride nanotubes are generated from the SEM image of the boron nitride nanotubes. And the TEM image of the boron nitride nanotube shows that the prepared boron nitride nanotube has better crystallization property.
Example 7
In this example, boron powder, lithium oxide, and tungsten oxide were weighed in a molar ratio of 5:0.1:1 and placed in a horizontal tube furnace. Firstly introducing nitrogen gas of 200sccm to remove air in the furnace chamber, heating to 1100 ℃, and introducing NH of 200sccm3Programmed heating to 30 ℃/min to 1300 ℃, heat preservation for 180min, and closing NH after reaction3And cooling to room temperature in Ar atmosphere. The detection shows that a large amount of boron nitride nanotubes are generated from the SEM image of the boron nitride nanotubes. And the TEM image of the boron nitride nanotube shows that the prepared boron nitride nanotube has better crystallization property.
Example 8
In this example, boron powder, lithium oxide, and tungsten oxide at a molar ratio of 5:2:1 were weighed and placed in a horizontal tube furnace. Firstly introducing nitrogen gas of 200sccm to remove air in the furnace chamber, raising the temperature by a program of 2 ℃/min to 1300 ℃, and introducing NH of 200sccm3Keeping the temperature for 100min, and closing NH after the reaction is finished3And cooling to room temperature in Ar atmosphere. The detection shows that a large amount of boron nitride nanotubes are generated from the SEM image of the boron nitride nanotubes. And the TEM image of the boron nitride nanotube shows that the prepared boron nitride nanotube has better crystallization property.
Example 9
In this example, boron powder, lithium oxide, and tungsten oxide were weighed in a molar ratio of 5:1:0.1 and placed in a horizontal tube furnace. Argon gas is firstly introduced into the furnace chamber at 200sccm to remove air in the furnace chamber, the temperature is increased to 1150 ℃, and NH of 200sccm is introduced into the furnace chamber3Programmed heating to 15 ℃/min to 1200 ℃, heat preservation for 90min, and closing NH after reaction3And cooling to room temperature in Ar atmosphere. The detection shows that a large amount of boron nitride nanotubes are generated from the SEM image of the boron nitride nanotubes. And the prepared boron nitride nano-tube is shown by a TEM image of the boron nitride nano-tubeThe rice tube has better crystallization property.
Example 10
In this example, boron powder, lithium oxide, and tungsten oxide at a molar ratio of 5:1:2 were weighed and placed in a horizontal tube furnace. Argon gas is firstly introduced into the furnace chamber at 200sccm to remove air in the furnace chamber, the temperature is programmed to rise to 1250 ℃, and NH of 200sccm is introduced into the furnace chamber3Keeping the temperature for 120min, and closing NH after the reaction is finished3And cooling to room temperature in Ar atmosphere. The detection shows that a large amount of boron nitride nanotubes are generated from the SEM image of the boron nitride nanotubes. And the TEM image of the boron nitride nanotube shows that the prepared boron nitride nanotube has better crystallization property.
Example 11
In this example, boron powder, lithium oxide, and tungsten oxide were weighed in a molar ratio of 5:1:0.8 and placed in a horizontal tube furnace. Argon gas is firstly introduced into the furnace chamber at 200sccm to remove air in the furnace chamber, the temperature is raised to 1180 ℃, and NH of 200sccm is introduced into the furnace chamber3Programmed heating to 10 ℃/min to 1300 ℃, heat preservation for 1250min, NH closing after reaction3And cooling to room temperature in Ar atmosphere. The detection shows that a large amount of boron nitride nanotubes are generated from the SEM image of the boron nitride nanotubes. And the TEM image of the boron nitride nanotube shows that the prepared boron nitride nanotube has better crystallization property.
Comparative example 1
In the comparative example, boron powder and lithium oxide were weighed in a molar ratio of 5:1 and placed in a horizontal tube furnace. Argon is firstly introduced to remove the air in the furnace chamber, the temperature is raised to 1210 ℃, and 200sccm NH is introduced3And (3) heating the temperature to 1210 ℃ by a program for 120min, closing NH3 after the reaction is finished, and cooling the temperature to room temperature in Ar atmosphere. FIG. 5 is an SEM image of boron nitride nanotubes obtained from boron powder and lithium oxide, and the number of the obtained tubes is very small.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. A preparation method of boron nitride nanotubes comprises the following steps:
weighing raw materials in a reactor, wherein the raw materials are a mixture of boron powder and lithium tungstate powder or a mixture of boron powder, lithium oxide powder and tungsten oxide powder;
the reactor is placed in an inert gas environment, the temperature is raised to the reaction temperature, ammonia gas is introduced, the boron nitride nanotube is obtained after the reaction is finished, the temperature rise is a temperature rise program of 2-30 ℃/min, and the reaction temperature is 1100-.
2. The method of claim 1, wherein the inert gas is argon or nitrogen or helium.
3. The method for preparing boron nitride nanotubes according to claim 1, wherein the reaction time after the introduction of ammonia gas is 1 to 3 hours.
4. The method of claim 1, wherein the boron powder in the raw material is in excess.
5. The method for preparing boron nitride nanotubes according to claim 1 or 4, wherein the molar ratio of the raw materials is (4-7):1 when the raw materials are a mixture of boron powder and lithium tungstate powder.
6. The method for preparing boron nitride nanotubes according to claim 1 or 4, wherein the molar ratio of the raw materials is 5 (0.1-2) to 1 or 5:1 (0.1-2) when the raw materials are a mixture of boron powder, lithium oxide powder and tungsten oxide powder.
7. The method of claim 1, wherein the reactor is a refractory ceramic reactor.
8. The method of claim 7, wherein the reactor is an alumina crucible or a silicon nitride ceramic boat or a zirconium oxide ceramic boat.
9. Boron nitride nanotubes obtained by the production method according to any one of claims 1 to 8.
10. The boron nitride nanotubes obtained by the preparation method according to any one of claims 1 to 8 are applied to high thermal conductivity materials, thermal interface materials, high strength composite materials, high temperature solid lubricants, extrusion antiwear additives and neutron radiation resistant materials.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115259111A (en) * | 2022-05-09 | 2022-11-01 | 上海交通大学 | Preparation method of boron nitride nanotube |
| CN116199194A (en) * | 2023-03-07 | 2023-06-02 | 南京大学 | Preparation method of boron nitride nanotube and boron nitride nanotube |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1836022A (en) * | 2003-08-20 | 2006-09-20 | 昭和电工株式会社 | Cubic boron intride, method for producing cubic boron nitride, grinding wheeel with cubic boron nitride, and sintered cubic boron nitride compact |
| WO2011119494A1 (en) * | 2010-03-22 | 2011-09-29 | The Regents Of The University Of California | Method and device to synthesize boron nitride nanotubes and related nanoparticles |
| CN106478112A (en) * | 2016-10-17 | 2017-03-08 | 西安理工大学 | A kind of high hardness and high toughness B4C‑W2B5 composite ceramics and preparation method thereof |
| CN107721433A (en) * | 2015-10-21 | 2018-02-23 | 哈尔滨工业大学 | Boron nitride complex phase ceramic and its sintering method and application |
| CN111204720A (en) * | 2020-02-10 | 2020-05-29 | 浙江硼矩新材料科技有限公司 | Batch preparation method of boron nitride nanotubes |
| CN111268656A (en) * | 2020-02-10 | 2020-06-12 | 浙江硼矩新材料科技有限公司 | Preparation method of boron nitride nanotube |
-
2021
- 2021-05-24 CN CN202110565679.9A patent/CN113353899B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1836022A (en) * | 2003-08-20 | 2006-09-20 | 昭和电工株式会社 | Cubic boron intride, method for producing cubic boron nitride, grinding wheeel with cubic boron nitride, and sintered cubic boron nitride compact |
| WO2011119494A1 (en) * | 2010-03-22 | 2011-09-29 | The Regents Of The University Of California | Method and device to synthesize boron nitride nanotubes and related nanoparticles |
| CN107721433A (en) * | 2015-10-21 | 2018-02-23 | 哈尔滨工业大学 | Boron nitride complex phase ceramic and its sintering method and application |
| CN106478112A (en) * | 2016-10-17 | 2017-03-08 | 西安理工大学 | A kind of high hardness and high toughness B4C‑W2B5 composite ceramics and preparation method thereof |
| CN111204720A (en) * | 2020-02-10 | 2020-05-29 | 浙江硼矩新材料科技有限公司 | Batch preparation method of boron nitride nanotubes |
| CN111268656A (en) * | 2020-02-10 | 2020-06-12 | 浙江硼矩新材料科技有限公司 | Preparation method of boron nitride nanotube |
Non-Patent Citations (1)
| Title |
|---|
| 龙晓阳: "《化学气相沉积法制备氮化硼纳米管的研究进展：》", 《材料导报Ａ：综述篇》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115259111A (en) * | 2022-05-09 | 2022-11-01 | 上海交通大学 | Preparation method of boron nitride nanotube |
| CN116199194A (en) * | 2023-03-07 | 2023-06-02 | 南京大学 | Preparation method of boron nitride nanotube and boron nitride nanotube |
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