CN113346455A - Over-temperature automatic protection circuit of GaN broadband power amplifier - Google Patents
Over-temperature automatic protection circuit of GaN broadband power amplifier Download PDFInfo
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- CN113346455A CN113346455A CN202110824449.XA CN202110824449A CN113346455A CN 113346455 A CN113346455 A CN 113346455A CN 202110824449 A CN202110824449 A CN 202110824449A CN 113346455 A CN113346455 A CN 113346455A
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- 238000001514 detection method Methods 0.000 claims description 19
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
- H02H5/047—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature using a temperature responsive switch
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Abstract
The invention belongs to the field of GaN broadband power amplifiers, in particular to an over-temperature automatic protection circuit of a GaN broadband power amplifier, which comprises a GaN broadband power amplifier module; the output end of the GaN broadband power amplifier module is electrically connected with a temperature sensor module, and the output end of the temperature sensor module is electrically connected with a temperature transmission module; this gaN broadband power amplifier module passes through single chip module and detects it, adopt analogue device completely, the protection speed depends on the speed of comparator, generally can arrive within 100ns, single chip module's cost constantly reduces, the reliability also constantly improves, it can not carry out day adjustment to the numerical value of threshold value when temperature sensor protects temperature circuit to have solved general gaN broadband power amplifier, and when the magnitude of voltage frequently floated from top to bottom at threshold value data, cause the inside of gaN broadband power amplifier easily and cause the damage, lead to having reduced gaN broadband power amplifier's practicality, the efficiency of this gaN broadband power amplifier automatic protection circuit that crosses the temperature has been improved.
Description
Technical Field
The invention relates to the field of GaN broadband power amplifiers, in particular to an over-temperature automatic protection circuit of a GaN broadband power amplifier.
Background
The GaN HEMT is taken as a third-generation wide-bandgap compound semiconductor device and has wide application in the fields of electromagnetic compatibility EMC, wireless communication, satellite communication, radar electronic warfare and the like, the prior power amplifier temperature protection is realized by adopting an analog circuit method, the current temperature value of the power amplifier is converted into an analog voltage value through an analog temperature sensor and is input into one end of a comparator, the other end of the comparator circuit is used as a threshold value of over-temperature protection by setting a proper fixed voltage value, and once the output voltage value of the analog temperature sensor exceeds the threshold value of one end of the comparator, the comparator outputs a low level and turns off the power amplifier, so that the purpose of over-temperature protection is achieved.
And the current GaN broadband power amplifier can not adjust the numerical value of the threshold value daily when the over-temperature sensor protects the temperature circuit, and when the voltage value fluctuates frequently in threshold value data, the damage to the inside of the GaN broadband power amplifier is easily caused, so that the practicability of the GaN broadband power amplifier is reduced, and the use requirement of the GaN broadband power amplifier can not be met.
Therefore, the over-temperature automatic protection circuit of the GaN broadband power amplifier is provided for solving the problems.
Disclosure of Invention
In order to make up for the defects of the prior art and solve the problem of low practicability of a general GaN broadband power amplifier in temperature detection, the invention provides an over-temperature automatic protection circuit of the GaN broadband power amplifier.
The technical scheme adopted by the invention for solving the technical problems is as follows: the invention relates to an over-temperature automatic protection circuit of a GaN broadband power amplifier, which comprises a GaN broadband power amplifier module; the output electric connection of gaN broadband power amplifier module has the temperature sensor module, the output electric connection of temperature sensor module has the temperature transmission module, the output electric connection of temperature transmission module has single chip module, single chip module's output electric connection has the temperature data detection module, the output electric connection of temperature data detection module has opens the power amplifier module, open the output of power amplifier module and the input electric connection of gaN broadband power amplifier module.
The output electric connection of singlechip module has the temperature and judges the module, the output electric connection of temperature judgement module has the temperature and crosses the low module, the output electric connection that the temperature crossed the low module has the efficiency module of closing, the output electric connection that the temperature judged the module has the high module of temperature.
Preferably, the model of the temperature sensor module is DS18B20, and the temperature range of the temperature sensor module is-55-125 ℃.
Preferably, the model of the single chip microcomputer module is MM32L373PS, two electrical connectors are arranged inside the single chip microcomputer module, and the single chip microcomputer module is electrically connected with the temperature data detection module and the temperature judgment module through the two electrical connectors respectively.
Preferably, the temperature judgment module comprises an overhigh temperature module and an overlow temperature module, and the output end of the overhigh temperature module and the output end of the overlow temperature module are electrically connected with the temperature data detection module.
Preferably, the internal maximum value of the over-temperature module is set to T1, the internal minimum value of the under-temperature module is T2, and the phase difference between T1 and T2 is twenty degrees.
Preferably, the model of the temperature data detection module is SW-902B, and the range of the temperature data detection module is-50-390 ℃.
Preferably, the inside of GaN broadband power amplifier module is provided with two inputs, and GaN broadband power amplifier module respectively with close efficiency module and temperature sensor module electric connection through two inputs.
The invention has the advantages that:
1. the invention connects the over-temperature module and the over-temperature module respectively at the two connecting ends of the temperature judging module, the temperature data value is detected to achieve the purpose of turning on or turning off the power amplifier, the GaN broadband power amplifier module is detected by the singlechip module, an analog device is completely adopted, the protection speed depends on the speed of a comparator and can be generally within 100ns, the cost of the singlechip module is continuously reduced, the reliability is also improved continuously, the problem that the general GaN broadband power amplifier can not adjust the value of the threshold value every day when the temperature sensor protects the temperature circuit is solved, and when the voltage value fluctuates frequently in the threshold value data, the damage to the inside of the GaN broadband power amplifier is easily caused, so that the practicability of the GaN broadband power amplifier is reduced, and the efficiency of the over-temperature automatic protection circuit of the GaN broadband power amplifier is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a flow chart of an embodiment.
In the figure: 1. a single chip module; 2. a temperature data detection module; 3. opening a power amplifier module; 4. an over-temperature module; 5. a temperature judgment module; 6. a low temperature module; 7. closing the efficacy module; 8. a GaN broadband power amplifier module; 9. a temperature sensor module; 10. and a temperature transmission module.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Examples
Referring to fig. 1, an over-temperature automatic protection circuit of a GaN broadband power amplifier includes a GaN broadband power amplifier module 8; GaN broadband power amplifier module 8's output electric connection has temperature sensor module 9, temperature sensor module 9's output electric connection has temperature transmission module 10, temperature transmission module 10's output electric connection has single chip module 1, single chip module 1's output electric connection has temperature data detection module 2, temperature data detection module 2's output electric connection has opens power amplifier module 3, open power amplifier module 3's output and GaN broadband power amplifier module 8's input electric connection.
The output electric connection of single chip module 1 has temperature judgement module 5, and the output electric connection of temperature judgement module 5 has the temperature to cross module 6 excessively, and the output electric connection that the temperature crossed module 6 excessively has the efficiency of closing module 7, and the output electric connection of temperature judgement module 5 has temperature too high module 4.
During operation, after the power amplifier module 3 is opened, the single chip microcomputer module 1 sends an inquiry command to the DS18B20 to inquire a current temperature value, when the overhigh temperature module 4 is higher than the protection temperature T1, the single chip microcomputer module 1 immediately closes the efficacy module 7, the fan is forcibly opened to dissipate heat of the power amplifier, after the power amplifier is closed, the temperature can continuously decrease under the action of the fan, at the moment, the single chip microcomputer module 1 continuously inquires the temperature value until the temperature is reduced to a safe temperature value T2T1> T2, the single chip microcomputer module 1 controls the power amplifier to be opened to continuously operate, T2 is set to be 20 ℃ lower than T1, compared with the situation that only one temperature threshold T1 is set, frequent opening and closing of the power amplifier caused by small-range fluctuation of the temperature can be avoided.
In this embodiment, the model of the temperature sensor module 9 is DS18B20, the temperature range of the temperature sensor module 9 is-55 ℃ to 125 ℃, and the control mode of the temperature sensor module 9 is a single-bus control mode, which has the advantages of high integration level, small volume, and strong anti-interference capability.
In this embodiment, the model of the single chip module 1 is MM32L373PS, and the inside of the single chip module 1 is provided with two electrical connectors, and the single chip module 1 is electrically connected with the temperature data detection module 2 and the temperature judgment module 5 respectively through two electrical connectors, detects the temperature data reported by the temperature sensor module 9 in real time, and when the temperature reaches the temperature protection threshold of the facility, the single chip can immediately cut off the enabling pin of the power amplifier, and the power amplifier stops working, thereby preventing the power amplifier from being damaged or the service life from being damaged due to overhigh temperature.
In this embodiment, the temperature judgment module 5 includes the over-temperature module 4 and the over-temperature module 6, and the output of the over-temperature module 4 and the output of the over-temperature module 6 are both electrically connected with the temperature data detection module 2.
In this embodiment, the highest internal value of the over-temperature module 4 is set to T1, the lowest internal value of the under-temperature module 6 is T2, and the difference between T2 and T1 is twenty degrees.
In this embodiment, the model of the temperature data detection module 2 is SW-902B, and the range of the temperature data detection module 2 is-50 deg.C-390 deg.C.
In this embodiment, the inside of the GaN broadband power amplifier module 8 is provided with two input ends, and the GaN broadband power amplifier module 8 is electrically connected with the shutdown function module 7 and the temperature sensor module 9 through the two input ends respectively.
In conclusion, the GaN broadband power amplifier module 8 detects the over-temperature protection circuit through the single chip microcomputer module 1, completely adopts an analog device, the protection speed depends on the speed of a comparator, generally can reach within 100ns, the cost of the single chip microcomputer module 1 is continuously reduced, the reliability is also continuously improved, the problem that the value of a threshold value cannot be daily adjusted when an over-temperature sensor protects a temperature circuit is solved, and when a voltage value fluctuates frequently in threshold value data, damage to the inside of the GaN broadband power amplifier is easily caused, the practicability of the GaN broadband power amplifier is reduced, and the efficiency of the over-temperature automatic protection circuit of the GaN broadband power amplifier is improved.
In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed.
Claims (7)
1. The utility model provides a GaN broadband power amplifier excess temperature automatic protection circuit which characterized in that: comprises a GaN broadband power amplifier module (8); the output end of the GaN broadband power amplifier module (8) is electrically connected with a temperature sensor module (9), the output end of the temperature sensor module (9) is electrically connected with a temperature transmission module (10), the output end of the temperature transmission module (10) is electrically connected with a single chip microcomputer module (1), the output end of the single chip microcomputer module (1) is electrically connected with a temperature data detection module (2), the output end of the temperature data detection module (2) is electrically connected with an open power amplifier module (3), and the output end of the open power amplifier module (3) is electrically connected with the input end of the GaN broadband power amplifier module (8);
the output electric connection of single chip module (1) has temperature judgment module (5), the output electric connection of temperature judgment module (5) has the temperature and crosses low module (6), the output electric connection that the temperature crossed low module (6) has closes efficiency module (7), the output electric connection of temperature judgment module (5) has temperature module (4) of crossing.
2. The over-temperature automatic protection circuit of the GaN broadband power amplifier according to claim 1, characterized in that: the model of the temperature sensor module (9) is DS18B20, and the temperature range of the temperature sensor module (9) is-55-125 ℃.
3. The over-temperature automatic protection circuit of the GaN broadband power amplifier according to claim 1, characterized in that: the model of the single chip microcomputer module (1) is MM32L373PS, two electrical connectors are arranged inside the single chip microcomputer module (1), and the single chip microcomputer module (1) is electrically connected with the temperature data detection module (2) and the temperature judgment module (5) through the two electrical connectors respectively.
4. The over-temperature automatic protection circuit of the GaN broadband power amplifier according to claim 1, characterized in that: the temperature judging module (5) comprises a high temperature module (4) and a low temperature module (6), and the output end of the high temperature module (4) and the output end of the low temperature module (6) are electrically connected with the temperature data detecting module (2).
5. The over-temperature automatic protection circuit of the GaN broadband power amplifier according to claim 1, characterized in that: the internal maximum value of the over-temperature module (4) is set to T1, the internal minimum value of the under-temperature module (6) is T2, and the phase difference between T2 and T1 is twenty degrees.
6. The over-temperature automatic protection circuit of the GaN broadband power amplifier according to claim 1, characterized in that: the model of the temperature data detection module (2) is SW-902B, and the measuring range of the temperature data detection module (2) is-50-390 ℃.
7. The over-temperature automatic protection circuit of the GaN broadband power amplifier according to claim 1, characterized in that: the inside of GaN broadband power amplifier module (8) is provided with two inputs, and GaN broadband power amplifier module (8) respectively with close efficiency module (7) and temperature sensor module (9) electric connection through two inputs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110824449.XA CN113346455A (en) | 2021-07-21 | 2021-07-21 | Over-temperature automatic protection circuit of GaN broadband power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110824449.XA CN113346455A (en) | 2021-07-21 | 2021-07-21 | Over-temperature automatic protection circuit of GaN broadband power amplifier |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6597556B1 (en) * | 1997-05-28 | 2003-07-22 | Robert Bosch Gmbh | Circuit for protection from excess temperature |
| US20130314835A1 (en) * | 2012-05-24 | 2013-11-28 | Himax Technologies Limited | Adaptive protection circuit module for operational amplifier and adaptive protection method thereof |
| CN107390764A (en) * | 2017-07-25 | 2017-11-24 | 珠海格力节能环保制冷技术研究中心有限公司 | Thermal-shutdown circuit and method, air conditioner |
| CN210441999U (en) * | 2019-11-13 | 2020-05-01 | 重庆秦嵩科技有限公司 | SEM-D module temperature monitoring system |
-
2021
- 2021-07-21 CN CN202110824449.XA patent/CN113346455A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6597556B1 (en) * | 1997-05-28 | 2003-07-22 | Robert Bosch Gmbh | Circuit for protection from excess temperature |
| US20130314835A1 (en) * | 2012-05-24 | 2013-11-28 | Himax Technologies Limited | Adaptive protection circuit module for operational amplifier and adaptive protection method thereof |
| CN107390764A (en) * | 2017-07-25 | 2017-11-24 | 珠海格力节能环保制冷技术研究中心有限公司 | Thermal-shutdown circuit and method, air conditioner |
| CN210441999U (en) * | 2019-11-13 | 2020-05-01 | 重庆秦嵩科技有限公司 | SEM-D module temperature monitoring system |
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Application publication date: 20210903 |